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Part : 2N6659-2 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $133.4380 Price Each : $133.4380
Part : 2N6659-E3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $30.00 Price Each : $67.20
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2N6659 Datasheet

Part Manufacturer Description PDF Type
2N6659 Motorola FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor Original
2N6659 Philips Semiconductors N-Channel Vertical DMOS Transistor Original
2N6659 Semelab N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR Original
2N6659 Motorola Switchmode Datasheet Scan
2N6659 Motorola European Master Selection Guide 1986 Scan
2N6659 Motorola TMOS SWITCHING FET TRANSISTORS Scan
2N6659 N/A Basic Transistor and Cross Reference Specification Scan
2N6659 N/A Shortform Datasheet & Cross References Data Scan
2N6659 N/A Shortform Transistor PDF Datasheet Scan
2N6659 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6659 N/A Semiconductor Master Cross Reference Guide Scan
2N6659 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6659 N/A FET Data Book Scan
2N6659 Semelab MOS Transistors Scan
2N6659 Siliconix MOSPOWER Design Data Book 1983 Scan
2N6659 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
2N6659 Vishay Siliconix Shortform Siliconix Datasheet Scan

2N6659

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber 2N6659 2N6660 VQ1004J/P V (BR)DSS M in (V) rDS(on) M ax (Q) v GS(th) (V , View 2N6659 Top View Plastic: Sidebraze: V Q 1004J V Q 1004P 2N6660 Absolute Maximum Ratings (Tc , Symbol V DS V GS 2N6659 35 ±20 1.4 1 3 6.25 2.5 170 20 2N6660 60 ±20 l.l 0.8 3 6.25 2.5 170 20 , ) Tem ic sllicon ix Specifications3 L im its 2N6659 P a ra m e te r S ta tic D rain-Source B reakdow n -
OCR Scan
M 1004j 2N6659/2N6660 VQI004J/P VQ1004J P-37994--
Abstract: MOTOROLA MAXIMUM RATINGS Rating » Symbol 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 Unit , Vdc Drain Current â'" Continuous (1) Pulsed (2) Id 'DM 2.0 3.0 Ade 2N6659 2N6660 2N6661 MPF6659 , %. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) 2N6659 MPF6G59 thru thru 2N6661 MPF6661 2N6659/60/61 CASE 79-04, STYLE 6 TO-39 (TO-205AD) 1 Drain MPF6659,60,61 2 so««« CASE 29-03, STYLE 22 , nAdc Drain-Source Breakdown Voltage (VQS - OJD = 10 /*A> 2N6659, MPF6659 2N6660, MPF6660 2N6661 -
OCR Scan
N666 2N6659/60/61
Abstract: 2N6659 2N6660 2N6661 J N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode , â'¢ No second breakdown â'¢ Low RDSon QUICK REFERENCE DATA 2N6659 2 N6660 2N6661 , Copyrighted By Its Respective Manufacturer 2N6659 2N6660 2N6661 J RATINGS Limiting values in accordance , unless otherwise specified 2N6659 2N6660 2N6661 Drain-source breakdown voltage id = 10M;VGS , Switching times lD= 1.0 A; Vp = 25 V; VGs = 0to 10 V Wss toff 2N6659 2N6660 2N6661 J 2N6659 2N6660 -
OCR Scan
2N6661 transistor TP 1322 N6659 S3T31
Abstract: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number 2N6659 2N 6660 VQiOOU/P 60 V(BR)DSS Min (V) n>S(on) Max (Q) V GS(th) (V ) 0.8 to 2 , , etc. · Battery Operated Systems · Solid-State Relays Dual-In-Line TO-205AD (TO-39) 2N6659 2N , -Aug-94 2N6659/2N6660, VQ1004J/P Specifications3 Limits 2N6659 2N6660 VQ1004J/P Parameter Static , temperature. e. This parameter not registered with JEDEC on 2N6659 and 2N6660. VNDQ06 Siliconix P -
OCR Scan
MOSFET 2n6659 VQ1004P
Abstract: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number 2N6659 2N6660 VQ1004J/P V(BR)DSS Min (V) 35 60 rDS(on) Max (W) 1.8 @ VGS = 10 V 3 @ VGS = , , etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line TO-205AD (TO-39) N S 1 2N6659 , PD RthJA RthJC TJ, Tstg 2N6659 35 "20 1.4 1 3 6.25 2.5 170 20 2N6660 60 "20 1.1 0.8 3 6.25 2.5 , 0.96 Unit V A 2 0.8 62.5 W _C/W _C Siliconix P-37994-Rev. C, 08-Aug-94 1 2N6659 Vishay Siliconix
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P-37994--R
Abstract: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR , . e High-speed switching â'¢ No second breakdown â'¢ Low RQSon QUICK REFERENCE DA TA 2N6659 , 1 003b354 Sb^ 66S 2N6659 2N6660 2N6661 J V RATINGS Limiting values in accordance with the Absolute Maximum System (I EC 134) 2N6659 Drain-source voltage V DS max. 2N6660 , °C unless otherwise specified 2N6659 Drain-source breakdown voltage I D = 1 0 M ; V GS = 0 -
OCR Scan
7Z69322
Abstract: Relays D Top View ORDERING INFORMATION 2N6659-2 2N6659 2N6659-E3 See -2 Flow Document , 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V (D-S) MOSFET FEATURES , www.vishay.com/doc?91000 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix SPECIFICATIONS (TA = 25 °C , ?91000 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix Vishay Siliconix
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2011/65/EU 2002/95/EC JS709A
Abstract: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 , 1 2N6659 2N6660 2 3 G N D N Plastic: VQ1004J Sidebraze: VQ1004P N Top , Parameter Symbol 2N6659 2N6660 VQ1004J VQ1004P VQ1004J/P Drain-Source Voltage VDS , . Please request FaxBack document #70222. Siliconix P-37994-Rev. C, 08-Aug-94 1 2N6659/2N6660 Temic Semiconductors
Original
Abstract: . â'¢ High-speed switching â'¢ No second breakdown â'¢ Low RoSon QUICK REFERENCE DATA J 2N6659 2N6660 2N6661 2N6659 2N6660 2N6661 Drain-source voltage VDS max. 35 60 90 V Gate-source voltage , Manufacturer I L 2N6659 2N6660 2N6661 41E D H 711QASfci â¡QEb7cìM 3 «PHIN PHILIPS INTERNATIONAL V_ T , = 0 2N6659 2N6660 2N6661 Vds max. 35 60 90 V VgSO max. 30 30 30 V "d max. 1.4 1.1 0.9 A "dm , 2N6659 2N6660 2N6661 V(BR)DSS min. 35 60 90 V Idss max. 10 10 10 PA 'gss max. 100 100 100 nA vGS(th -
OCR Scan
max 1988 711QAS T-39-Q5 T-39-05
Abstract: SEMELAB pic Type_No SELECTOR GUIDE Technology Polarity MOS PRODUCTS Package VDSS RDSS_on ID Pd June 1998 Ver. 1.1 Ciss_pf Qg_nC Td_on Tr Td_off Tf 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6781 2N6781-SM 2N6781LCC4 2N6782 2N6782 -
OCR Scan
jfet selector guide T0-220SM 2N6782-SM 2N6782LCC4 2N6783 2N6783-SM 2N6783LCC4 2N6784
Abstract: fài Supertex inc. N-Channei Enhancement-Mode Vertical DMOS FET Ordering Information Standard Commercial Devices BVdss/ BV qgs 2N6659 ^DS(O N) (max) 1.8Î2 If 1.5A Order Number / Package TO-39 2N6659 35V High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off , discrete pinouts. 2N6659 Thermal Characteristics Package lD (continuous)* lD (pulsed) Power -
OCR Scan
Abstract: 2N6659/2N6660, VQ1004J/P Siliconix NChannel EnhancementMode MOS Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ , 8 D3 N S 1 2 3 G N D N N Top View Top View 2N6659 2N6660 , ) Single Parameter Symbol 2N6659 2N6660 VQ1004J Total Quad VQ1004P VQ1004J/P Unit , parameter not registered with JEDEC. P-37994-Rev. C (08/08/94) 1 2N6659/2N6660, VQ1004J/P Temic Semiconductors
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2N6660 siliconix
Abstract: 20 IRFF123 TO-39 60 3.0 1.1 6.25 2 N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 35 2.5 , â  Increased Reliability Product Summary Part Number jjgg RDS(ON) (Ohms) Package 2N6659 35 1.8 , Current Continuous1 2N6659 .± 1.4A VN35AB. , Drain-Source Saturation Voltage1 All 1.5 VGS = 5V, Id = 0.3A VDS(OH) 2N6659 1.8 V VGS=10V, lD=1A VN35AB 2.5 All 5 Vgs = 5V, Id = 0.3A rDS(on) Drain-Source ON Resistance1 2N6659 1.8 n VGS=10V, lD -
OCR Scan
IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN67AF VN66AF VN46AF VN1706D IRF643
Abstract: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V , 1 2N6659 2N6660 2 3 G N D N Plastic: VQ1004J Sidebraze: VQ1004P N Top , Parameter Symbol 2N6659 2N6660 VQ1004J VQ1004P VQ1004J/P Drain-Source Voltage VDS , . Please request FaxBack document #70222. Siliconix P-37994-Rev. C, 08-Aug-94 1 2N6659/2N6660 Temic Semiconductors
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Abstract: Superte x inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVcss / BV dgs 35V R dS (O N ) (max) 1,8£2 Id(on) (min) 1.5A Order Number / Package TO-39 2N6659 2N6659 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS , -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 7-1 2N6659 Thermal -
OCR Scan
Abstract: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER , an-Resistance - 1.5 Ohm Typ - 2N66591MPF6659 2.0 Ohm Typ - 2N6660/2N6661 - MPF6660/MPF6661 o Low , *2F':*$ ,:*:,. ,:,". ,.,., `:?,. ,4. "$,~ ID IDM 2.0 2N6659 2N6660 , = 15 v. Vnc = 0) - - - - 4 Max Unit Vdc 35 60 90 2N6659, MPF6659 2N6660 , = IOV, ID = I.OA) 2N6659, 2N6660, 2N6661 , 2N6659, 2N6660, 2N6661 , (VGS = 5.0 V, ID = Motorola
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MOTOROLA TO205AD 2N6660 MOTOROLA mps 0737 MPS 0711 motorola *6659 DS482C
Abstract: 20 IRFF123 TO-39 60 3.0 1.1 6.25 2 N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 35 2.5 , ,2N6659, 2N6660,2NM61 Power Derating TTT . Iâ'" INFIN 40 80 120 160 200 TEMPERATURE (®C) Z Ul S o , , 2N6656, 2N6657, 2N6658, 2N6659, 2N6660, 2N6661 i Operating ¡ VN66AF, VN67AF -iâ'"i i i 11 if - i i i , '" DRAIN-TO-SOURCE VOLTAGE Safe Operating Area 2N6659, VN35AB â'"Iâ'"r-n T-ry- v) a. S < < oc a I 1 f -
OCR Scan
IRF641 IRF631 IRF633 VN66AD VN67AD VN88AF VN89AF VN88AF SILICONIX vn46ad IRF621 IRF623
Abstract: | VIEW CART | SHIPPING http://store.americanmicrosemiconductor.com/2n6659.html 4/12/2010 , 2N6659 60V Vdss N-Channel FET (field Effect Transistor) 11.69 Transistors MOSFETs . Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6659 2N6659 60V Vdss N -Channel FET (field Effect Transistor) Enter code INTER3 , : 2N6659 $ 14.61 Information Spec Sheets Tutorials Shipping FAQs $ 11.69 $ 2.92 Company American Microsemiconductor
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Abstract: Submit ¡ ¡ 2N6659 Availability Buy 2N6659 at our online store ! 2N6659 Information Cate gory » Transistors Class » MOSFETs and TempFETs Type » MOSFETs; N -Ch; Enhancement 2N6659 American Microsemiconductor
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Abstract: 2N6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS(ON) (max) 35V 1.8 Order Number / Package ID(ON) (min) 1.5A TO-39 2N6659 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. These enhancement-mode (normally-off) transistors utilize a vertical , . 7-1 2N6659 Thermal Characteristics jc ja ID (continuous)* ID (pulsed) Power Supertex
Original
2N6659 supertex FAST DMOS FET Switches
Abstract: 2N6659 2N6660 2N6661 J N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode , â'¢ No second breakdown â'¢ Low RDSon QUICK REFERENCE DATA 2N6659 2 N6660 2N6661 , Copyrighted By Its Respective Manufacturer 2N6659 2N6660 2N6661 J RATINGS Limiting values in accordance , unless otherwise specified 2N6659 2N6660 2N6661 Drain-source breakdown voltage id = 10M;VGS , Switching times lD= 1.0 A; Vp = 25 V; VGs = 0to 10 V Wss toff 2N6659 2N6660 2N6661 J 2N6659 2N6660 -
OCR Scan
LE174JB QDDG27
Abstract: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 , 1 2N6659 2N6660 2 3 G N D N Plastic: VQ1004J Sidebraze: VQ1004P N Top , Parameter Symbol 2N6659 2N6660 VQ1004J VQ1004P VQ1004J/P Drain-Source Voltage VDS , . Please request FaxBack document #70222. Siliconix P-37994-Rev. C, 08-Aug-94 1 2N6659/2N6660 -
OCR Scan
VN0808M VN99AA VN99AB VN90AA VN90AB VN89AD VN88AD VN88AO VW1706M
Abstract: , VN46AF, VN40AD, VN40AF, VN3SAA, VN35AB, 2N6656, 2N66S7,2N6658,2N6659, 2N6660,2NM61 Power Derating TTT , , 2N6658, 2N6659, 2N6660, 2N6661 i Operating ¡ VN66AF, VN67AF -iâ'"i i i 11 if - i i i i ly 10 /»s , '" DRAIN-TO-SOURCE VOLTAGE Safe Operating Area 2N6659, VN35AB â'"Iâ'"r-n T-ry- v) a. S < < oc a I 1 f -
OCR Scan
IN400 VN46 VN1201D VN120 IRF540 IRF542 VN1000D
Abstract: 20 IRFF123 TO-39 60 3.0 1.1 6.25 2 N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 35 2.5 , â  Increased Reliability Product Summary Part Number jjgg RDS(ON) (Ohms) Package 2N6659 35 1.8 , Current Continuous1 2N6659 .± 1.4A VN35AB. , Drain-Source Saturation Voltage1 All 1.5 VGS = 5V, Id = 0.3A VDS(OH) 2N6659 1.8 V VGS=10V, lD=1A VN35AB 2.5 All 5 Vgs = 5V, Id = 0.3A rDS(on) Drain-Source ON Resistance1 2N6659 1.8 n VGS=10V, lD -
OCR Scan
IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN64GA VN1001A VN0606M IRF822
Abstract: . â'¢ High-speed switching â'¢ No second breakdown â'¢ Low RoSon QUICK REFERENCE DATA J 2N6659 2N6660 2N6661 2N6659 2N6660 2N6661 Drain-source voltage VDS max. 35 60 90 V Gate-source voltage , Manufacturer I L 2N6659 2N6660 2N6661 41E D H 711QASfci â¡QEb7cìM 3 «PHIN PHILIPS INTERNATIONAL V_ T , = 0 2N6659 2N6660 2N6661 Vds max. 35 60 90 V VgSO max. 30 30 30 V "d max. 1.4 1.1 0.9 A "dm , 2N6659 2N6660 2N6661 V(BR)DSS min. 35 60 90 V Idss max. 10 10 10 PA 'gss max. 100 100 100 nA vGS(th Vishay Siliconix
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