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2N6654 Datasheet

Part Manufacturer Description PDF Type
2N6654 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=20 / Hfe=10min / fT(Hz)=75M / Pwr(W)=150 Original
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2N6654

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SavantIC Semiconductor Product Specification 2N6654 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See , SavantIC Semiconductor Product Specification 2N6654 Silicon NPN Power Transistors CHARACTERISTICS , Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N6654 - -
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Abstract: JMnic Product Specification 2N6654 Silicon NPN Power Transistors DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN , Specification 2N6654 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , 50 JMnic Product Specification 2N6654 Silicon NPN Power Transistors PACKAGE OUTLINE JMnic
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Abstract: roduct*, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6654 Silicon NPN Power Transistors DESCRIPTION â'¢With TO-3 package â'¢High voltage capability â'¢Fast switching speeds â'¢Low saturation voltage APPLICATIONS â'¢Switcing regulators â'¢Inverters â'¢Solenoid and relay drivers â'¢Deflection circuits PINNING (See Fig , Silicon NPN Power Transistors 2N6654 CHARACTERISTICS Tj=25! unless otherwise specified SYMBOL New Jersey Semiconductor
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13MAX-
Abstract: 2N6654 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 350V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 20A 7.92 (0.312) 12.70 (0.50) All Semelab Semelab
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Abstract: 15 300 25 TO-3 2N6654 2N6654 150 400 350 400 .10 15 2.0 .60 1.3 15 300 25 TO-3 2N6655 2N6655 150 450 -
OCR Scan
2N3902 2N4347 2N5157 2N5239 2N5240 2N5466 2N6582 2n6580 2N6511 2N6274 2N5686 A13L45B 413LS
Abstract: 2N6654 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 350V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 20A All Semelab hermetically sealed products can Semelab
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Abstract: XGSR15030-I 2N6654 XGSR15035 XGSR15035-I 2N66S5 XGSR15040 XGSR15040-I UNIT C ollector-B ase Voltage C olle , XGSR15030-I SYMBOL VcBO VcEO V ebo VcEXISUSI VcERISUSI IcBO (1 ) (2) Iebo(1 ) Iebo I CEO IcE X 2N6654 -
OCR Scan
P6302 2n6653 2N6653 XGSR15030 AM503
Abstract: ¥ General Semiconductor Industries, Inc. NPN TRANSISTOR CHIP " 21 " Typical Device Types: 2N6653, 2N6654, 2N6655, GSDS50020 20 - 50 AMP Bonding Pad Areas Base (3) 3 4 x 1 6 m ils Emitter (4) 26 X 16 m ils Fast Switching Front Metallization: Aluminum · C 2R® For High Voltage Surface Stabilization Back Metallization: Gold or Chrome-SilverGold 0224" E L E C T R I C A L C H A R A C T E R IS T IC S @ TA = 25°C 21J SYM BO L b v cbo b v ceo 21M Max Min 500 400 8.0 0.5 0.5 -
OCR Scan
26X16 50/15A 10/3A
Abstract: 2N6654 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 350V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 20A All Semelab hermetically sealed products can Semelab
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Abstract: SEMELAB LTD 37E » 8133167 0GGG030 S M L B T rVjúm 33 -Of T ' 3 . `7- 0 ( TVpe No. Reliability Polarity Option Package v CEO ·c cont hF E @ Vc e /'c »T PD 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6702 2N6703 2N6704 2S012 2S012A 2S013 2S013A 25024 25025 25026 25033 25034 25035 25036 2S103 2S104 2S301A 2S302A 2S303A 2S304A 2S305A 2S307A SCREEN SCREEN SCREEN SCREEN SCREEN SCREEN SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN -
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T053 hirel T0220
Abstract: '" Continuous â'" Peak SYMBOL 2N6653 XGSR15030 2N6654 XGSR15035 2N6655 XGSR15040 UNIT VcBO , otherwise noted) 2N6655 XGSR15040 2N6654 XGSR15035 2N6653 XGSR15030 Min Max Min VcBO -
OCR Scan
OOOB144 TWX910-950-1942 7B92A X910-950-1942
Abstract: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6569 2N6573 2N6574 2N6575 2N6576 2N6577 2N6578 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587 2N6588 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 -
OCR Scan
2N6686 2N6687 2N6688 2N6751 2N6752 2N6753
Abstract: ~7¡à GENERAL SEMICONDUCTOR » T |3 c 11öSi:iD G Q 0 n 3 1 72C 01931 391 859 0 GENE RA L S E M I C ON DU CTOR 1$T General ^ 3^ Semiconductor « Industries, Inc â'¢ fi ]|~ 3 3 ^ S' D NPN TRANSISTOR CHIP S q i l H R E n COMPANY â' 21 â' Typical Device Types: 2N6653, 2N6654, 2N6655, XGSR10045 25 -5 0 AMP Fast Switching Bonding Pads Areas Base (3) 34 x 16 mils Emitter (4) 26 x 16 mils Typical Switching Front Metallization: Aluminum ( % -
OCR Scan
Abstract: MflE » â _ai331fl7 0000MH5 031 MSMLB, A^B sehelab LTDT^'t BI-POLAR TRANSISTORS (CECC AND HIGH REL) & HIGH ENERGY Type Number Rel Code Pol Package Vceo Ic (conti Hfe @ Vce/Ic fT Pd 2N6589 HR HR T061 400 10 7-35 3/7 25M 125 2N6590 HR HR T061 450 10 7-35 3/7 25M 125 2N6594 REQ PNP T03 40 12 15-200 3/4 2.5M 100 2N6609 REQ PNP T03 140 16 5min 4/16 150 2N6653 HR NPN T03 300 20 10min 5/15 15M 175 2N6654 HR NPN T03 350 20 10min 15/10 75M 150 2N6655 HR NPN T03 400 20 10min 15/10 75M 150 -
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BC107A BC108A BC109C BC140 BC140-16 BC109C NPN bc108 IC hr 2N6754 2S024 2S025 2S026 2S033 2S034
Abstract: /1 2.5 05/1 2.5@5/1 2.5®7/1.4 2,5®7/1.4 2.5 ©7/1.4 2.9 05/1 2,9 ©5/1 1.9 ©5/1 2N6653 2N6654 -
OCR Scan
2N5804 2N5805 2N6249 2N6250 2N6251 101005 2NS545
Abstract: 2N5731 2N5732 2N6653 2N6654 2N6655 BVCeo VOLTS B^cbo VOLTS PACKAGE BV ebo VOLTS P D@ 100 -
OCR Scan
GSTR120 SR10030 GSDR10020 GSDR10025 GSTR12030 GSTR12035 GSTR12040 R10030
Abstract: 1.9 ©5/1 2N6653 2N6654 2N6655 2N6674 2N6675 2N6676 2N6677 2N6678 MJ13330 MJ13331 300 350 400 300 -
OCR Scan
MJ13014 MJ13015 MJ-13330 2N8574
Abstract: 2N6654 XGSR15040-1 ' â'¢20 .'400 150 15 10 0.8 0.25 1.50 0.35 2N6655 XGSR50020-I â  .'30 ; â'¢ 200 - -
OCR Scan
MIL-STD-461A TO3 HEATSINK xgsr15035-1 XGSR7530 XGSR10040 XGSR7530-I 5E55D TWX910 9S0-1942
Abstract: 80 100 5.0 37.5 2N5732 TO-3 80 80 5.0 50.0 2N6653 TO-3 300 350 7.0 75.0 2N6654 TO-3 350 400 7.0 -
OCR Scan
2N6691 2N6692 2N6693 2N6920 2N6920A 2N6921 2N3286
Abstract: >10®15/5 1@15/3 1 5@15/3 1@400 175 5 9®30 15 47®15/3 2 4® 15/3 2N6654 350 20 >10@15/5 1®15/3 1 -
OCR Scan
2N6257 2N6258 2N6259 2N6336 2N6308 2N6307 2N6306 2N6276 2N6262 2N5933 2N5934 2N5935 2N5936 2N6032 2N6033
Abstract: roduct*, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6654 Silicon NPN Power Transistors DESCRIPTION â'¢With TO-3 package â'¢High voltage capability â'¢Fast switching speeds â'¢Low saturation voltage APPLICATIONS â'¢Switcing regulators â'¢Inverters â'¢Solenoid and relay drivers â'¢Deflection circuits PINNING (See Fig , Silicon NPN Power Transistors 2N6654 CHARACTERISTICS Tj=25! unless otherwise specified SYMBOL -
OCR Scan
E 13007 84/6X 84/7X
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