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Part : TC8S 2-N653-2M Supplier : TURCK Manufacturer : Newark element14 Stock : - Best Price : $15.00 Price Each : $15.00
Part : 2N6532 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 942 Best Price : $3.00 Price Each : $3.69
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2N6532 Datasheet

Part Manufacturer Description PDF Type
2N6532 Central Semiconductor NPN Power Transistor, TO-220 Original
2N6532 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6532 Central Semiconductor Power Darlington Transistors (Epoxy) Scan
2N6532 Central Semiconductor Power Darlington Transistors (Epoxy) Scan
2N6532 Central Semiconductor Power Transistors Scan
2N6532 General Electric 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. Scan
2N6532 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N6532 N/A Transistor Shortform Datasheet & Cross References Scan
2N6532 N/A Shortform Transistor PDF Datasheet Scan
2N6532 N/A Transistor Replacements Scan
2N6532 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6532 N/A Semiconductor Master Cross Reference Guide Scan
2N6532 N/A Shortform Transistor Datasheet Guide Scan
2N6532 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

2N6532

Catalog Datasheet MFG & Type PDF Document Tags

2N6533

Abstract: 2n651 2N6530, 2N6531, 2N6532, 2N6533 File Num ber 873 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A (2N6530, 2N6532) Gain of 1000 at 3 A (2N6533 , -220AB Operate from 1C with- Power switching 9 Z C S -3 9 9 6 9 The 2N6530, 2N6531, 2N6532, and 2N6533* are , . 80 2N6531 100 2N6532 100 2N6533 120 120 120 V C E R *SUS* R b e = 100S2 v C E O ( s , 2N6530, 2N6531, 2N6532, 2N6533 ELECTRICAL CHARACTERISTICS, A t Case Temperature (Tc ) = 25°C unless
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OCR Scan
2n651 TQ-220AB 92CS-246IO 92CS-2461 P60I9 92CS-246 PG-31

2N6533

Abstract: Ha 100b RR IS S E M I C O N D SE CT OR ' wesM 9NR531. 2N6532. 2N6533 SbE J > 43 05 27 1 Q G 4D S7 7 BÔ3 , Number 8 7 3 2N6530,2N6531,2N6532, 2N6533 7 = 3 3 -2 ? 8-Ampere N-P-N Darlington Power Transistors 80,100,120 Volts, 60 Watts Gain of 1000 at 5 A (2N6530, 2N6532) Gain of 1000 at 3 A (2N6533) Gain , 2N6530, 2N6531, 2N6532, and 2N6533* are monolithic n-p-n silicon Darlington transistors designed for , . v CER(susl 80 2N6531 100 2N6532 100 2N6533 120 120 120 V V RBE = 1 0 0 n
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OCR Scan
Ha 100b 2cs24 92CS-39 43QE271 92CS-24M 2CS-24612RI 92CS-244I5RI 92CS-24MI

s43a

Abstract: 2N6533 File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A (2N6530, 2N6532) Gain of 1000 at 3 A (2N6533) Gain of 500 at 3 , TERMINAL DESIGNATIONS (FLANGE) O _r -£T 92CS-39969 JEDEC TO-220AB The RCA-2N6530, 2N6531, 2N6532 , . MAXIMUM RATINGS, Absolute-Maximum Values: 2N6530 2N6531 2N6532 *VCB0 . 80 100 100 VCER(sus , -.- 2N6530, 2N6531, 2N6532, 2N6533 electrical characteristics, At Case Temperature (Tcl = 25°C unless
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OCR Scan
s43a 1000 watts schematic diagram of solid state audio amplifier A09 monolithic amplifier 2N6532 RCA RCA 0798 92CS-24604RI P40I9

NPN Transistor 10A 24V

Abstract: NPN Transistor TO220 VCEO 80V 100V DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220 CASE DESCRIPTION , 80 80 80 2N6531 100 100 100 100 TJ,Tstg JC 2N6532 100 100 100 100 5.0 8.0 15 , 2N6531 2N6532 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX ICEO ICEV ICEV IEBO BVCER BVCEO , 2N6531 MIN MAX 500 10K 5K 2.8 100 10K 5K 2.8 1K 20 200 2N6532 MIN MAX 1K 1K , 50µs 1 VCEO (MAX) = 80V (2N6530) VCEO (MAX) = 100V (2N6531, 2N6532) VCEO (MAX) = 120V (2N6533
Central Semiconductor
Original
NPN Transistor 10A 24V NPN Transistor TO220 VCEO 80V 100V POWER TRANSISTOR TO-220 NPN Transistor VCEO 80V 100V hfe 100 transistor 5k NPN Transistor TO220 VCEO 50v i 10A

n6532

Abstract: , 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain , -220AB 9 2 C S -3 9 9 6 9 The RCA-2N6530, 2N6531, 2N6532, and 2N 6533» are m onolithic n-p-n , _ " D_T - 3 `3-'Z.? 2N6530, 2N6531, 2N6532, 2N6533 ELEC TR IC A L C H ARACTERISTICS, A t , , _ u a rn n g io n rower Transistor* 2N6530, 2N6531, 2N6532, 2N6533 ELECTRICAL CHARACTERISTICS, Temperature (T c ) = 2 5 °C unless otherwise specified LIM ITS 2N6532 Min. - TEST C O N D ITIO NS CHARAC
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OCR Scan
n6532 DQ17HS3 D017ES

2N6532

Abstract: SavantIC Semiconductor Product Specification 2N6532 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 , SavantIC Semiconductor Product Specification 2N6532 Silicon NPN Power Transistors CHARACTERISTICS , tolerance:±0.10 mm) 3 2N6532 -
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Original
Abstract: 3.0 3.0 8.0 20 2N6532 8.0 65 100 100 1,000 10,000 5.0 3.0 8.0 -
OCR Scan
2N6497 2N6498 2N6499 BU406 BU406D BU407

045h11

Abstract: bu4060 Power Transistors TO-220 Case (Continued) type no. ic PD BVCBO bvceo hfe @ IC vce(sat) @ ic ft (a) (w) (V) (V) (A) (V) (A) (MHz) npn pnp max min min min max max min 2n6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2n6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2n6499 5.0 80 450 350 10 75 2.5 5.0 5.0 5.0 2n6530 8.0 65 80 80 1,000 10,000 5.0 3.0 8.0 20 2n6531 8.0 65 100 100 500 10,000 3.0 3.0 8.0 20 2n6532 8.0 65 100 100 1,000 10,000 5.0 3.0 8.0 20 2n6533 8.0 65 120 120 1,000 10
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OCR Scan
045h11 bu4060 BU407D MJE3055T MJE700T

MJE13009

Abstract: MJE-13009 TO-220 Power Transistors TO-220 Case (Continued) TO-220FP Full Pak · Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530 8.0 65 80 80 1,000 10,000 5.0 2N6531 8.0 65 100 100 500 10,000 3.0 2N6532 8.0 65 100
Central Semiconductor
Original
D45H11 MJE701T MJE702T MJE703T MJE2901T MJE2955T MJE13009 MJE-13009 D44C11 Data mje13007 mje13009 equivalent MJE800T equivalent BU408 BU408D BU806 BU807 D44C11 D44H11

BDX538

Abstract: TP121 -220AB 2N6532 8 100 1000-10,000 5 3 65 2N6533 8 120 1000-10,000 3 3 65 2-162 Powered by ICminer.com
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OCR Scan
2N6385 2N6650 2N6383 BDX83 2N6055 2N6384 BDX538 TP121 2N6056 000S733

bu408 equivalent

Abstract: 330.150 Standard Optional Power Transistors TO-220 Case (Continued) TO-220 TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 2N6530 8.0 65 80 80 2N6531 8.0 65 100 2N6532 8.0 65 100 2N6533 8.0 65 120 NPN PNP hFE TO-220FP Full Pak @ IC VCE(SAT) @ IC fT (A) (V) MAX
Central Semiconductor
Original
bu408 equivalent 330.150 bu806 equivalent equivalent mje13005 mje13007 equivalent MJE800T MJE801T MJE802T MJE803T MJE2801T MJE13004

MJE700T

Abstract: 2N6530 Power Transistors TO-220 Case (Continued) TY P f NO, 1C m PD m BVépo BVCtO m m m m h re (A) MB 10 10 10 VCE(SAT) @ 1C (V) MAX 2.5 2.5 2.5 5.0 5.0 5.0 5.0 5.0 5.0 fT (A) (MHz) Iflffcl mnf 5.0 5.0 5.0 MW 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 BU406 BU406D BU407 BU407D BU408 BU408D BU806 BU807 D44H11 MJE800T MJE801T mjeso 2T PNP MAX 5.0 5.0 5.0 80 80 80 MAX 75 75 75 350 400 450 250 300 350 8.0 8.0 &0 8.0 7.0 7.0 7.0 7.0 7.0 7.0 65 65
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OCR Scan
MJE13005 MJE13006 MJE13007A MJE13008

2N6531B

Abstract: 2N660 r S E ME L AB LTD 37E J> m 6133167 `' ¿2* 0 D D E ci 4 ISMLB r-33 IVIELABil op tion "1^ Polarlty Packa3e VCEO ·c V' ' X g .- Type No. cont hFE< Vce /Ic PD 2N6497 2N6498 2N6499 2N6500 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 2N6533 2N6534 2N6535 2N6536 2N6537 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6558S 2N6560 2N6561 2N656 9 2N6573 2N6574 2N6575 2N6576 2N6577 2N6578 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587 2N6588 2N6589 2N6590 2N6594
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OCR Scan
2N660 2N6653 T0220 T0202

BUB06

Abstract: ST BDX53C 8.0 80 65 1,000- 10,000 5.0 2.0 5.0 - 2N6531 8.0 100 65 1,000-10,000 3.0 3.0 3.0 â'" 2N6532 8.0
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OCR Scan
BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BUB06 ST BDX53C BDW23C T-33-29 T-33-33

MJE1300

Abstract: -2.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 NPN 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 BU406 BU406D
Central Semiconductor
Original
MJE1300 2N6040 2N6041 2N6042 2N6124 2N6125 2N6126

BDX53E

Abstract: BUB06 8.0 80 65 1,000- 10,000 5.0 2.0 5.0 - 2N6531 8.0 100 65 1,000-10,000 3.0 3.0 3.0 â'" 2N6532 8.0
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OCR Scan
BDW24C BDX53E BDX54E BDX53F BDX54F 2N6386

*e13007

Abstract: MJE13009 ,000 5.0 2N6531 8.0 65 100 100 500 10,000 3.0 2N6532 8.0 65 100
Central Semiconductor
Original
TIP136 mje13 darlington tip31 D44* npn 2N6109 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494
Abstract: 2N6532 2N6533 BU406 BU406D BU407 BU407D BU408 BU408D BU806 BU807 D44C* D44H* MJE800T MJE801T MJE802T -
OCR Scan
2N5496 2N6099 2N6101 2N6103 2N6121 2N6122

JE2901

Abstract: 2N6044 2N6531 2N6532 2N6533 BU406 BU406D BU407 BU407D BU408 BU408D BU806 BU807 D44H11 M JE800T M JE801T M JE802T
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OCR Scan
2N6044 JE2901 JE702 JE802 2N6043 2N6045 2N6123 2N6129 2N6130
Abstract: ,000-10,000 3.0 3.0 3.0 â'" 2N6532 8.0 100 65 1,000-10,000 5.0 2.0 5.0 -
OCR Scan
TEMPERATURE-65 2N6666 C1000SE3
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