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Part : 2N6387 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.5779 Price Each : $0.6309
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 1,678 Best Price : $0.3070 Price Each : $0.9180
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.4235 Price Each : $0.4932
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.3130 Price Each : $0.90
Part : 2N6387 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 58 Best Price : $1.58 Price Each : $2.05
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 1,388 Best Price : $0.3130 Price Each : $0.90
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.7540 Price Each : $0.8360
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.3150 Price Each : $0.34
Part : 2N6387 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 2,368 Best Price : $1.52 Price Each : $1.52
Part : 2N6387 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 1,679 Best Price : $0.33 Price Each : $0.33
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 52 Best Price : $0.49 Price Each : $0.49
Part : 2N6387 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 45 Best Price : $0.7313 Price Each : $1.1250
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 110 Best Price : $0.47 Price Each : $0.78
Part : 2N6387 Supplier : - Manufacturer : basicEparts Stock : 973 Best Price : - Price Each : -
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 145 Best Price : $0.7494 Price Each : $0.7494
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 374 Best Price : $0.36 Price Each : $1.1040
Part : 2N6387G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 379 Best Price : £0.2950 Price Each : £0.5350
Shipping cost not included. Currency conversions are estimated. 

2N6387 Datasheet

Part Manufacturer Description PDF Type
2N6387 Central Semiconductor Leaded Power Transistor Darlington Original
2N6387 Motorola Plastic Medium Power Silicon Transistor Original
2N6387 On Semiconductor Plastic Medium-Power Silicon Transistor Original
2N6387 On Semiconductor Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 - 80 VOLTS Original
2N6387 On Semiconductor Plastic Medium-Power Transistors Original
2N6387 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6387 Boca Semiconductor DARLINGTON SILICON POWER TRANSISTORS Scan
2N6387 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan
2N6387 Central Semiconductor Power Transistors Scan
2N6387 Crimson Semiconductor EPITAXIAL BASE Transistor Scan
2N6387 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N6387 General Electric 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. Scan
2N6387 Mospec POWER TRANSISTORS(65W) Scan
2N6387 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N6387 Motorola European Master Selection Guide 1986 Scan
2N6387 N/A Basic Transistor and Cross Reference Specification Scan
2N6387 N/A Transistor Shortform Datasheet & Cross References Scan
2N6387 N/A Basic Transistor and Cross Reference Specification Scan
2N6387 N/A Shortform Transistor PDF Datasheet Scan
2N6387 N/A Transistor Replacements Scan
Showing first 20 results.

2N6387

Catalog Datasheet MFG & Type PDF Document Tags

2N6386

Abstract: 2N6387 SavantIC Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power , CONDITIONS 2N6386 VCBO Collector-base voltage 2N6387 VALUE 40 Open emitter 60 2N6388 Collector-emitter voltage 40 2N6387 Open base 2N6388 VEBO Emitter-base voltage IC V 80 , 2N6387/6388 V 10 A ICM Collector current-Pulse 15 IB Base current-DC 0.25 , 2N6387 2N6388 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified
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Original
2n6666 NPN 80V 3A 2N6666/6667/6668 2N6387/6388

2N6388

Abstract: 2N6387 , Temperature Range Symbol V cEO VCB Ve b 'c IB Po 65 0.52 Pd 2.0 0.016 T Ji Tstg 2N6387 60 60 5.0 10 15 250 , 2N6387 2N6388 `ELECT RIC A L C H A R A C T E R IST IC S (Tc " 25°C unless otherwise noted , Current (Vb e - 5.0 Vdc, lc - 0) VCEO(sus) 2N6387 2N6388 'C E O 2N6387 2N6388 'C E X 1 5 Vdc) 1-5 Vdc) 1.5 Vdc, TC - 125"C) 1-5 Vdc, T c - 125"C) 2N6387 2N6388 2N6387 2N6388 'ebo _ _ _ _ Symbol , ) Base-Emitter On Voltage (IC - 5.0 Ade, V c e - 3.0 Vdc) ( l c - 10 Ade, V c e - 3.0 Vdc) hFE 2N6387,2N6388
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OCR Scan
2N63

2N6387

Abstract: 1N5825 Emitter­Base Voltage 10 15 5.0 Collector­Base Voltage 2N6387 2N6388 Unit VCEO VCB , Collector­Emitter Sustaining Voltage ­ @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 VCEO(sus) = 80 Vdc (Min) - 2N6388 · Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , Medium-Power Silicon Transistors 2N6387 2N6388* SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6387/D MOTOROLA 2 Figure 2. Switching Times Test Circuit tr, tf 10 ns DUTY CYCLE = 1.0% V2
Motorola
Original
1N5825 MSD6100 2N6387/D

2N6388

Abstract: 2N6388G 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium-Power Silicon Transistors These , (sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388 ·Monolithic Construction with Built-In , 2N6387 2N6388 VCEO 60 80 Collector-Base Voltage 2N6387 2N6388 VCB 60 80 5.0 Vdc , ORDERING INFORMATION Device Symbol Max Unit RqJC 1.92 Package Shipping 2N6387
ON Semiconductor
Original
2N6388G 2N638

2N6388

Abstract: 2N6387 JMnic Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors , Collector-base voltage 2N6387 VALUE 40 Open emitter 60 2N6388 Collector-emitter voltage 40 2N6387 Open base 2N6388 VEBO Emitter-base voltage IC 60 Open collector 5 2N6386 , V 8 2N6387/6388 IB V 80 Collector current-DC ICM V 80 2N6386 VCEO , -65~150 TC=25 JMnic Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power
JMnic
Original

2N6387

Abstract: 2N6387-D ON Semiconductor ) 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON , Voltage ­ @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388 Monolithic Construction , Range Symbol 2N6387 2N6388 Unit VCEO VCB 60 80 Vdc 60 80 BASE , . 10 1 Publication Order Number: 2N6387/D 2N6387 2N6388 PD, POWER DISSIPATION (WATTS
ON Semiconductor
Original
2N6387-D 220AB

2n6388

Abstract: 2N6387 , 2N6387.2N6388 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted ) Characteristic Symbol Min , (Min) - 2N6386 = 60 V (Min) - 2N6387 = 80 V (Min) - 2N6388 * Collector-Emitter Saturation Voltage VCE , * Complementary to 2N6666, 2N6667, 2N6668 MAXIMUM RATINGS lc = 3.0 A - 2N6386 lc = 5.0 A - 2N6387, 2N6388 , , TEMPERATURECC) 150 NPN 2N6386 2N6387 2N6388 Characteristic Symbol 2N6386 2N6387 2N6388 Unit , 2N6387 2N6388 VCEO(sus) 40 60 80 V Collector Cutoff Current (VCE = 40 V, lB = 0 ) 2N6386 ( VCE = 60 V
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OCR Scan

2N6388

Abstract: 2N6387 2N6386, 2N6387.2N6388 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted , = 60 V (Min) - 2N6387 = 80 V (Min) - 2N6388 * Collector-Emitter Saturation Voltage VCE(sat) = 2.0 V (Max.) | = 2.0 V (Max.)! Ic = 3.0 A - 2N6386 I L = 5.0 A - 2N6387, 2N6388 £ < * DC Current , \ 25 50 75 100 125 Tc , TEMPERATURE^ C) 150 NPN 2N6386 2N6387 2N6388 Characteristic Symbol 2N6386 2N6387 2N6388 Unit Collector-Emitter Voltage VcEO 40 60 80 V COIIector-Base Voltage VCBO 40 60 80 V
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OCR Scan
2n6387.2n6388

2N6387

Abstract: 2N6388 2N6387 THERMAL CHARACTERISTICS Characteristics 1 TO-220AB 50 Units / Rail 2N6387G TO , 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium-Power Silicon Transistors These , 65 WATTS, 60 - 80 VOLTS VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388 Monolithic , Collector-Emitter Voltage 2N6387 2N6388 VCEO 60 80 Collector-Base Voltage 2N6387 2N6388 VCB
ON Semiconductor
Original
Abstract: SGS-THOMSON 2N6387 2N6388 [MSIfiiSilLiSìlKìtÉfflOSS SILICO NPN POWER DARLINGTON , INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and 2N6388 are silicon , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol P aram eter V alue Unit 2N6387 V CBO C , perature 0.25 A 65 W -65 to 150 °C 150 °c 1/4 2N6387/2N6388 THERMAL DATA , = 200 mA fo r 2N6387 fo r 2N6388 V BE C o lle cto r-E m itte r S aturation V oltage lc = -
OCR Scan
2N6387/2N6388 T0-220

2N6387

Abstract: 2N6388 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS n 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in , 2N6387 V CBO Collector-Base Voltage (I B = 0) 2N6388 60 80 V V CEV , C 150 o C 1/4 2N6387/2N6388 THERMAL DATA R thj -ca se Thermal Resistance , VCEO V CE = rated VCEO I CEO Collector Cut-off Current (I B = 0) for 2N6387 for 2N6388 I
STMicroelectronics
Original
P011C

2N6388

Abstract: 2N6387 amplifier and low-speed switching applications. 2N6387 2N6388* *ON Semiconductor Preferred Device · , @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388 Monolithic Construction with , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD 2N6387 60 60 10 15 2N6388 80 , 119 April, 2002 - Rev. 10 Publication Order Number: 2N6387/D 2N6387 2N6388 TA TC 4.0 80 PD
ON Semiconductor
Original

1N5825

Abstract: 2N6387 ON Semiconductor ) 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON , Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388 Monolithic Construction , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N6387 2N6388 Unit , 1 Publication Order Number: 2N6387/D 2N6387 2N6388 PD, POWER DISSIPATION (WATTS) TA
ON Semiconductor
Original

2N6387

Abstract: 2N6386 Inchange Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power , voltage 2N6387 Open emitter 40 60 2N6386 2N6387 Open base 60 Open collector 5 , 8 2N6387/6388 PC V 80 2N6386 IB V 40 Collector current-DC ICM UNIT , TC=25 Inchange Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN , voltage Base-emitter on voltage VBE-1 IC=0.2A, IB=0 2N6387 Collector cut-off current
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2N6386-2N6388 qdsp-u238 6388
Abstract: P 35-2^1 File Number 610 2N6386, 2N6387, 2N6388 SbE I 430 227 1 0 0 4 Q 5M 7 5Mb H H A S , 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A (2N6387,2N6388) Gain of 1000 at 3 A (2N6386) Features , amplifiers Hammer drivers Series and shunt regulators Qc The 2N6386, 2N6387, and 2N6388* are m onolithic , 2N6386 is complem entary to the 2N6666, the 2N6387 is complem entary to the 2N6667, and the 2N6388 is com , , Absolute-Maximum Values: * VCBO 2N6386 40 40 40 40 5 8 15 0.25 65 2N6387 60 60 60 60 5 10 15 0.25 65 vs6G n -
OCR Scan
92CS-2069IR2 92CS-20699RI

transistor A05

Abstract: 2N6388 »_._ 2N6386, 2N6387, 2N6388 File Number 610 10-Ampere N-P-N Darlington Power Transistors â'¢40-60-80 Volts, 65 Watts Gain of 1000 at 5 A (2N6387, 2N6388) Gain of 1000 at 3 A (2N6386) Features: â  Operates , -220AB The 2N6386, 2N6387, and 2N6388* are monolithic silicon n-p-n Darlington transistors designed for low , be driven directly from integrated circuits. The 2N6386 is complementary to the 2N6666, the 2N6387 is , * In accordance with JEDEC registration data format JS-6 RDF-2. 2N6387 60 60 60 60 5 10 15 0.25 65
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OCR Scan
transistor A05 npn darlington A05 monolithic amplifier 079V Complementary Darlington Audio Power Amplifier MCS-I070IRI P60I9 92CS- Z0699RI 0172SE V0LT456
Abstract: 2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for , ' 80 VOLTS VCEO(sus) = 60 Vdc (Min) â' 2N6387 = 80 Vdc (Min) â' 2N6388 Low Collectorâ'Emitter Saturation Voltage â' VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc â' 2N6387, 2N6388 Monolithic Construction , Collectorâ'Emitter Voltage 2N6387 2N6388 VCEO 60 80 Collectorâ'Base Voltage 2N6387 2N6388 VCB , Shipping 2N6387 THERMAL CHARACTERISTICS Characteristics ORDERING INFORMATION TOâ'220AB 50 ON Semiconductor
Original

2N6387

Abstract: 1N5825 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium-Power Silicon Transistors These , - 80 VOLTS VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388 ·Monolithic Construction with , Voltage 2N6387 2N6388 VCEO 60 80 Collector-Base Voltage 2N6387 2N6388 VCB 60 80 , Shipping 2N6387 THERMAL CHARACTERISTICS Characteristics 2 TO-220AB 50 Units / Rail
ON Semiconductor
Original

2N6386

Abstract: MOTOROLA 6-38-7 TECHNICAL DATA SEMICONDUCTOR 2N6386 2N6387 2N6388 DARLINGTON 8 AND 10 AMPERE PLASTIC MEDIUM-POWER , ) · · · 2N 6386 2N6387 2N 6388 Voltage - NPN SILICON POWER TRANSISTORS 40-60-80 VOLTS 65 WATTS , J ' T stg Cr - 0.52 , Q 8.0 15 10 15 10 15 2N6386 AO 2N6387 60 60 2N6388 , | b3t.73S4 GQ04b4S 0 | T_33 ^ 2N6386, 2N6387, 2N6388 NPN ·E L E C T R IC A L CHARACTERISTICS C h , )
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OCR Scan
MOTOROLA 6-38-7

1N5825

Abstract: 2N6387 ON Semiconductort 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON , Voltage ­ @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388 Monolithic Construction , Voltage Symbol 2N6387 2N6388 Unit VCEO 60 80 Vdc Collector­Base Voltage VCB , March, 2001 ­ Rev. 9 1 Publication Order Number: 2N6387/D 2N6387 2N6388 PD, POWER
ON Semiconductor
Original
Abstract: File Num ber 610 2N6386, 2N6387, 2N6388 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A (2N6387, 2N6388) Gain of 1000 at 3 A (2N6386) Features , regulators CM The 2N6386, 2N6387, and 2N6388* are monolithic silicon n-p-n Darlington transistors , , the 2N6387 is complementary to the 2N6667, and the 2N6388 is complementary to the 2N6668. These , n d ata fo rm a t JS-6 R D F -2 . 2-125 POWER TRANSISTORS 2N6386, 2N6387, 2N6388 ELE C TR -
OCR Scan
20700RI 92CS-26900

2n6386

Abstract: ._ 2N6386, 2N6387, 2N6388 610 10-Ampere N-P-N Darlington Power Transistors ·40-60-80 Volts , amplifier« Hammer drivers Series and shunt regulators JED EC TO-220AB OC The 2N6386, 2N6387, and , ry to the 2N6666, the 2N6387 is co m p le m e n ta ry to the 2N6667, and the 2N6388 is c o m p le m e , . 4 0 2N6387 60 60 60 60 5 810 15 0.25 65 See Fig.2 -6 5 to +150 235 2N 6388 80 80 80 80 5 V V , - Darlington Power Transistors 2N6386, 2N6387, 2N6388 E LE C T R IC A L C H A R A C T E R IS T
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OCR Scan
Showing first 20 results.