500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
JANTXV2N6351 Microsemi Corporation Small Signal Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-33, TO-33, 4 PIN visit Digikey Buy
JAN2N6351 Microsemi Corporation Small Signal Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-33, TO-33, 4 PIN visit Digikey Buy
JANTX2N6351 Microsemi Corporation Small Signal Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-33, TO-33, 4 PIN visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2N6351MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 2 Best Price : - Price Each : -
Part : JANTX2N6351MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 136 Best Price : - Price Each : -
Part : 2N6351 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 35 Best Price : $29.57 Price Each : $29.57
Part : JAN2N6351 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 120 Best Price : $228.1000 Price Each : $260.9900
Part : JANTXV2N6351 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 20 Best Price : $373.8600 Price Each : $373.8600
Shipping cost not included. Currency conversions are estimated. 

2N6351 Datasheet

Part Manufacturer Description PDF Type
2N6351 Microsemi NPN Darlington Power Silicon Transistor Original
2N6351 API Electronics Short form transistor data Scan
2N6351 API Electronics Short form transistor data Scan
2N6351 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6351 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6351 N/A Transistor Shortform Datasheet & Cross References Scan
2N6351 N/A Basic Transistor and Cross Reference Specification Scan
2N6351 N/A Shortform Transistor PDF Datasheet Scan
2N6351 N/A Shortform Transistor PDF Datasheet Scan
2N6351 New England Semiconductor BIPOLAR DARLINGTON Scan
2N6351 PPC Products Transistor Short Form Data Scan
2N6351 PPC Products Transistor Selection Guide Scan
2N6351 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan
2N6351 Semiconductor Technology NPN & PNP Silicon Darlington Transistors Scan
2N6351 Silicon Transistor JAN Qualified Power Transistors Scan
2N6351 Silicon Transistor Low Frequency Silicon Power Transistor Scan
2N6351JAN New England Semiconductor TRANS DARLINGTON NPN 150V 10A 2TO-66 Original
2N6351JAN New England Semiconductor NPN DARLINGTON POWER SILICON TRANSISTOR Original
2N6351JAN Unitrode International Semiconductor Data Book 1981 Scan
2N6351JANTX Unitrode International Semiconductor Data Book 1981 Scan
Showing first 20 results.

2N6351

Catalog Datasheet MFG & Type PDF Document Tags

2N6350

Abstract: 2N6351 POWER DARLINGTONS 5 Amp, 150V, NPN JAN & JANTX 2N6350 JAN & JANTX 2N6351 JAN & JANTX 2N6352 , RATINGS TO-33 JAN & JANTX JAN & JANTX 2N6350 2N6351 . 80V. 150V . 3 PIN , JANTX 2N 6350 JAN & JANTX 2N6351 JAN & JANTX 2N6352 JAN & JANTX 2N6353 MIL-STD-750 Test Symbol , °C Collector-Emitter Breakdown Voltage 2N6350, 2N6352 2N6351, 2N6353 BVceo 80 150 Vdc Vdc 3011 lc = 25mA, Reei = 2.2K , Collector â'" Emitter Cutoff Current D.C. Current Gain 2N6350, 2N6352 2N6351, 2N6353 BVE60, BVEB02 'cEX hFE
-
OCR Scan
JANTX 2N6351 2N635 JANTX 2n JANTX 2N6352 r6e2 Cto25 MIL-S-19500/472

2N6351

Abstract: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions , 2N6350 and 2N6351 â'¢ JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/472 , Resistance Junction-to-Case Collector-Emitter Voltage Collector-Base Voltage 2N6350 2N6351 2N6350 2N6351 Emitter-Base Voltage Total Power Dissipation Value TJ and TSTG R Ó¨JC V CEO -65 to , /13) ©2013 Microsemi Corporation Page 1 of 8 2N6350 and 2N6351 MECHANICAL and PACKAGING
Microsemi
Original
T4-LDS-0314
Abstract: IUNIT 2N6350 2N6351 2N6352 2N6353 /FEATURES DESCRIPTION â'¢ â'¢ â'¢ â'¢ Unitrode , . JANTX (.JANTXV 2N6351 Collectorâ'"Emitter Voltage , . MECHANICAL SPECIFICATIONS JAN,JANTX & JANTXV 2N6350 JAN.JANTX & JANTXV 2N6351 JAN, JANTX , JANTX 2N6350 JAN & JANTX 2N6351 JAN & JANTX 2N6352 JAN & JANTX 2N6353 ELECTRICAL , 2N6350, 2N6352 2N6351, 2N6353 Emitter Base Breakdown Voltage, Base 1 Emitter Base Breakdown Voltage -
OCR Scan
2N8331

2N6352

Abstract: 2N6353 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings , VCBO VEBO IB IC 2N6350 2N6352 80 80 2N6351 2N6353 150 150 Units Vdc Vdc Vdc Vdc Adc Adc Adc 12 6.0 0.5 5.0 10(1) 2N6350 2N6351 Total Power Dissipation @ T A = 250C @ T C = 1000C Operating & , 2N6350, 2N6351 TO-33 -65 to +200 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance , /0C for T C > 1000C Symbol RJC 2N6350 2N6351 20 2N6352 2N6353 4.0 Unit 0 C/W 2N6352
Microsemi
Original
rb1-e

2N6352

Abstract: 2N6350 TECHNICAL DATA 2N6350 JAN, JTX, JTXV 2N6351 JAN, JTX, JTXV 2N6352 JAN, JTX, JTXV 2N6353 JAN , RATINGS Ratings Symbol 2N6350 2N6352 2N6351 2N6353 Units VCER VCBO VEBO 80 80 , Emitter-Base Voltage Base Current Collector Current 12 6.0 0.5 5.0 10(1) IB IC 2N6350 2N6351 , TJ, Tstg 2N6352 2N6353 1.0(2) 5.0(3) 2.0(4) 25(5) 2N6350, 2N6351 TO-66 (TO , TA > 250C Derate linearly 250 mW/0C for TC > 1000C 2N6350 2N6351 2N6352 2N6353 20 4.0
New England Semiconductor
Original
JAN 2N6351

2N6350

Abstract: JANTXV JANTXV JANTXV JANTXV 2N6350 2N6351 2N6352 2N6353 FEATURES · H igh C u rre n t G ain: u p to , MAXIMUM RATINGS TO-33 JAN, JANTX I JANTXV 2N6350 JAN. JANTX & JANTXV 2N6351 3 PIN TO-66 JAN. JANTX JAN , M in . M ax. U n it s M e th o d JA N & JA N T X 2N6351 JA N & JA N T X 2N6353 T e s t C o n d , , 2N6352 2N6351, 2N6353 E m itter Base Breakdow n Voltage, B ase 1 E m itte r B ase Breakdown Voltage, B ase 2 C o lle c to r - E m itter C utoff Current D.C. C u rre n t Gain 2N6350, 2N6352 2N6351, 2N6353
-
OCR Scan
2N63S2 2NS35I

2N6350

Abstract: 2N6350 equivalent 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions , 2N6350 and 2N6351 TO-33 Package JAN, JANTX, and JANTXV qualifications are available per MIL-PRF , Resistance Junction-to-Case Collector-Emitter Voltage Collector-Base Voltage 2N6350 2N6351 2N6350 2N6351 Emitter-Base Voltage Total Power Dissipation Value T J and T STG R ӨJC V CEO -65 , /13) ©2013 Microsemi Corporation Page 1 of 8 2N6350 and 2N6351 MECHANICAL and PACKAGING
Microsemi
Original
2N6350 equivalent

2N6350

Abstract: 1000C Qualified Level 2N6350 2N6351 2N6352 JAN JANTX JANTXV 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage VCER , Ratings Base Current IB Collector Current 12 6.0 0.5 5.0 10(1) IC 2N6350 2N6351 , TJ, Tstg 2N6352 2N6353 1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200 2N6350, 2N6351 TO-33* W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol 2N6350 2N6351 2N6352 2N6353
Microsemi
Original

2N6350 equivalent

Abstract: 2N6351 condition E for 2N6350 and 2N6351. Test condition A for 2N6352 and 2N6353, weight = 3 lbs, t = 15s. C5 , -19500/472E FIGURE 6. Maximum safe operating area graph for types 2N6350 and 2N6351. 18 MIL-PRF , , SILICON, POWER, TYPES 2N6350, 2N6351, 2N6352, AND 2N6353, JAN, JANTX, JANTXV, JANHC, AND JANKC Inactive , Physical dimensions. See figure 1 (TO-33) for 2N6350 and 2N6351, figure 2 (3-pin TO-66) for 2N6352 and , (2) 5 (3) 12 2N6351 20 2.0 (4) 25 (5) 12 2N6352 4.0 2.0 (4) 25 (5) 12 2N6353 4.0 (1
-
Original
MIL-PRF-19500/472E MIL-PRF-19500/472D MIL-PRF-19500 JANHCA2N6350 JANKCA2N6350

2N6353

Abstract: RB1-E Operating & Storage Temp, Range Maximum Operating Conditions SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT 80 150 , See Safe Operating Area Diagrams 2N6353 2N6351/2N6353 MIN. MAX ELECTRICAL CHARACTERISTICS AT 25 , ) Safe Operating Area-2N6350 or 2N6351 V C E , COlLECTOR-EMnTER VOLTAGE (VOLTS) Safe Operating Area
-
OCR Scan
2N6351/2N6353 2N6350/2N6352 10MHZ JBI10

2N6350

Abstract: Factor O perating & Storage Temp. Range Maximum O perating Conditions SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT VCH 80 150 80 150 V 80 150 VCER 80 150 V i cou£crou/c*a °!» 2N6350, 2N6351 TO-66 (3 , 0.5 V V A A A W W/"C 2N6352 2N6351Ì2N6353 MuJ. MAX 5 25 25 .05 .25 .25 -6 5 'C to 2 0 0 °C , Diagrams 5 I 8 O I VCE_ COLLECTOR-EMITTER VOLTAGE (VOUS) Safe Operating Area -2N6350 or 2N6351
-
OCR Scan

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 X /472A 12-D 2N6351 YES YES X /472A 12-D 2N6352 YES YES X /472A 12-D 2N6353 YES YES X /472A 12 , 80V 2 N6350 2N6352 2N6301 2N6385 2N6283 2N6299 100V 2N6284 150V 2N6351 2N6353 hFEMIN. @lc 2000 @1 .OA (2N6350 & 2N6353) 1000 @ 1 .OA (2N6351 &2N6353) 750 @4.0A 1000 @5.0A 750 @10.0A 750
-
OCR Scan
2N389 2N1479 2N1489 2N1716 POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 pnp 400v 10a 2N1468 2NXXXX T-33- D0D07 19S00 2N424

2N6522

Abstract: ir6062 1.7 .10 .05 .10 .01 .015 35 30 20 10 30 T0-18 T0-18 T0-18 TO-72 TO-72 2N5390 2N6350 2N6351 2N6352 2N6353 2N5390 2N6350 2N6351 2N6352 2N6353 15 5.0 5.0 25 25 80 80 150 80 150 80 80* 150* 80* 150* 60
-
OCR Scan
2N997 2N998 2N999 2N2723 2N2785 2N6522 ir6062 IR5064 IR6060 IR6002 MM6427 0DD23S

2N6352

Abstract: 20 20 20 50 50 L ' TO-33 f i- 2N6350 2N6351 80 150 5.0 5.0 2000/10000@5/5 2000
-
OCR Scan
2N6298 2N6648 2N6649 2N6650 2N6300 2N6383
Abstract: 10.0 1000 5.0/3.0 2.0 5.0/0.1 2N6385* TO-213/ 5.0 2N6351* Fâ'˜ 24 80 -
OCR Scan
2N6384 2N6296 2N6297

2N6351

Abstract: 2N6351+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A
American Microsemiconductor
Original
Abstract: 2N6351+JAN Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A) (Test American Microsemiconductor
Original
Abstract: 2N6351+JANTX Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A American Microsemiconductor
Original

2NXXXX

Abstract: NPN Transistor 10A 400V to3 6308 2N6338 2N6341 2N6350 2N6351 2N 6352 2N6353 2N 6383 2N6384 2N 6385 JAN YES YES YES YES YES YES , 2N6298 2N6299 F-24 2N6351 2N6353 < o o o o 1000 @5.0A 2V @5.0A 750 @10.0A 2V @10.0A hFEMIN. @lc VcEtSAT) © &.N) I T l 2000 @1,0A (2N6350 & 2N6353) 1000 @ 1,0A (2N6351 &2N6353
-
OCR Scan
transistor 2n 523 transistor 2N 3440 2n3741 MIL c 3420 transistor TO-59 Package NPN Transistor 15A 400V to3 88DQ0787 2N1016B 2N1016C 2N1016D 2N1480 2N1481

1N6762

Abstract: JANKC2N2907A 2N6351 2N6352 2N7368 2N7369 2N7370 2N1483 2N1484 2N3418 2N3419 2N3766 2N3767 2N4235
New England Semiconductor
Original
JANKC2N2907A 1N6762 NES 2n4405 2n3031 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A

2N6226

Abstract: 2N6262 API ELECTRONICS INC Ã'b DETI [10435^2 DDD0231 â¡ 0043592 A P I ELECTRONICS INC 26C.00Z31 "T-SS-il CONTINUED VCBO Device No Case Volts 2N6262 TO-3 170 2N6350 TO-33 80 2N6351 TO-3 3 150 2N6352 TO- 80 66/3 2N6353 TO- 150 66/3 2N6354 TO-3 150 2N6383 TO-3 40 2N6384 TO-3 60 2N6385 TO-3 80 2N6495 TO-66 150 2N6510 TO-3 250 2N6511 TO-3 300 2N6512 TO-3 350 2N6513 TO-3 400 2N6514 TO-3 350 2N3789 2N3790 2N3791 2N3792 2N5007 2N5009 2N5151 2N5153 2N5290 2N5291 2N5316 2N5318 2N5386
-
OCR Scan
2N6226 2N5621 2N5623 2N5625 2N5627 2N5677 2N5737

2N6328

Abstract: 2N633 2000 1000 5 0.005 1.5 3 2N6351 TO-33 150 150 12 5 5 1000 1000 5 0.005 1.5 3 2N6352 TO-66 80 80 12 5 5
-
OCR Scan
2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6328 2N633

2n6324

Abstract: 2N6511 12 5 5 2000 1000 5 0.005 1.5 3 2N6351 TO-33 150 150 12 5 5 1000 1000 5 0.005 1.5 3 2N6352 TO-66 80
-
OCR Scan
2N6325 2N6326 2N6327 2n6324 2N6324 2N6339 2N6340
Showing first 20 results.