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Part : 2N6259 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 405 Best Price : $4.75 Price Each : $5.68
Part : 2N6259 Supplier : Solid State Manufacturing Manufacturer : Allied Electronics & Automation Stock : - Best Price : $3.37 Price Each : $3.68
Part : 2N6259 Supplier : Westinghouse Electric Manufacturer : Bristol Electronics Stock : 8 Best Price : $4.3680 Price Each : $6.72
Part : 2N6259 Supplier : RCA Manufacturer : Bristol Electronics Stock : 1 Best Price : - Price Each : -
Part : 2N6259 Supplier : GE Manufacturer : Bristol Electronics Stock : 2 Best Price : $6.72 Price Each : $6.72
Part : 2N6259 Supplier : Harris Semiconductor Manufacturer : Bristol Electronics Stock : 2 Best Price : $6.72 Price Each : $6.72
Part : 2N6259 Supplier : SPC Technology Manufacturer : Bristol Electronics Stock : 5 Best Price : $6.72 Price Each : $6.72
Part : 2N6259 Supplier : NTE Electronics Manufacturer : element14 Asia-Pacific Stock : 27 Best Price : $4.62 Price Each : $7.16
Part : 2N6259 Supplier : NTE Electronics Manufacturer : Farnell element14 Stock : 27 Best Price : £4.71 Price Each : £7.91
Shipping cost not included. Currency conversions are estimated. 

2N6259 Datasheet

Part Manufacturer Description PDF Type
2N6259 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6259 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan
2N6259 Diode Transistor TO-3 / Various Transistor Selection Guide Scan
2N6259 Diode Transistor Silicon Transistors Scan
2N6259 Diode Transistor Silicon Transistors Scan
2N6259 Diode Transistor 35 to 500V Transistor Selection Guide Scan
2N6259 General Electric High voltage, high power transistor. 170V, 250W. - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=16 / Hfe=15min / fT(Hz)=- / Pwr(W)=250 Scan
2N6259 Mospec BJT, NPN, Power Transistor, IC 16A - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=16 / Hfe=15min / fT(Hz)=- / Pwr(W)=250 Scan
2N6259 Mospec High Power NPN Silicon Transistor Scan
2N6259 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N6259 N/A Semiconductor Master Cross Reference Guide Scan
2N6259 N/A Shortform Electronic Component Datasheets Scan
2N6259 N/A Shortform Transistor Datasheet Guide Scan
2N6259 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6259 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6259 N/A Basic Transistor and Cross Reference Specification Scan
2N6259 N/A Transistor Shortform Datasheet & Cross References Scan
2N6259 N/A Shortform Transistor PDF Datasheet Scan
2N6259 N/A Transistor Replacements Scan
2N6259 New England Semiconductor NPN TO-3 Transistor Scan
Showing first 20 results.

2N6259

Catalog Datasheet MFG & Type PDF Document Tags

2n6259

Abstract: | | CONTACT US | VIEW CART | SHIPPING http://store.americanmicrosemiconductor.com/2n6259.html 4/12 , 2N6259 High Voltage - High Power Transistor. 170V - 250W. 12.98 Transistors Bipolar . Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6259 2N6259 Hig h V olt age - Hig h P ow er Tr ans ist or. 1 70V - 250W . Enter , : List Price: Our Price: You Save: 2N6259 $ 16.23 Information Spec Sheets Tutorials Shipping FAQs
American Microsemiconductor
Original

RCA-2N3773

Abstract: 2N6259 RCA 17370 D T~ ~/3 2N3773, 2N4348, 2N6259 File Number 526 High-Voltage, High-Current Power Transistors , '" 120W(2N4348), 150 W (2N3773), 250 W (2N6259) a 5-A specification for hFe, VB£l and VCE(sat) (2N4348) m 8-A specification for hF£, Vee, and VC£(sat) (2N3773, 2N6259) TERMINAL DESIGNATIONS 9ZCS-2/516 JEDEC TO-2Q4AA/TO-3 The RCA-2N3773, 2N4348. and 2N6259 are silicon n-p-n transistors intended for a , TEMPERATURE, Tslg . 'In accordance with JEDEC registration data. 2N4348 2N3773 2N6259 140 160
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OCR Scan
2N6259 RCA 2n3773 rca 2N4348 RCA 2n3773 power Amplifier 8a103 2n6259 solid state 001737D T-33-/3

2N6259

Abstract: 2n3773 Power Transistors 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D File Number 526 , W (2N6259) m 5 -A specification for hFe. VB £, and Vc£!sat) (2N4348) m 8-A specification lor hPf. VBe. and Vcc(sat) (2N3773, 2N6259) T-33-I5 TERMINAL DESIGNATIONS T " I- 3 92CS*27St6~ JEDEC TO-2Û4AA/TO-3 The 2N3773. 2N4348. and 2N6259 are silicon n-p-n transisTors intended for a wide , . 2N6259 170 170 150 7 16 30 4 15 250 1.43 V V V V A A A A W W /° C °C ·n 2 -56 5 HiHAS
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OCR Scan
2N3773A 2n3773m 2N 6259 430E271

2n6259

Abstract: 2N6259 equivalent SavantIC Semiconductor Product Specification 2N6259 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid , SavantIC Semiconductor Product Specification 2N6259 Silicon NPN Power Transistors CHARACTERISTICS , dimensions (unindicated tolerance:±0.10mm) 3 2N6259 -
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2N6259 equivalent

2n4348

Abstract: 2n6259 .5 5 2N6259 250 170 150 7 16 15 60 8 2 1.0 2.0 8 .8 2 , TYPICAL OUTPUT CHARACTERISTICS FOR TYPE 2N6259 BASE-TO-EMITTER VOLTAGE (VMI - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N6259 12 Solid Power Corporation â  00435^2 0DQD414 10b â  C A S E TEM , . COLLECTOR-TO-EMITTER VOLTAGE < CfJ - V V MAXIMUM OPERATING AREAS FOR TYPE 2N6259 440 E A S T ER N PARKW AY, FARM
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OCR Scan
2N4346 TWX-510-224-6582 T0-58

2N6259

Abstract: Submit ¡ ¡ 2N6259 Availability Buy 2N6259 at our online store ! 2N6259 Information Cate , 2N6259 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 150 V(BR )C BO (V) : 170 I(C ) Max . (A
American Microsemiconductor
Original

2n6259

Abstract: Product Specification www.jmnic.com 2N6259 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipation APPLICATIONS Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and , Product Specification www.jmnic.com 2N6259 Silicon NPN Power Transistors CHARACTERISTICS Tj , www.jmnic.com 2N6259 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions
JMnic
Original

2N434B

Abstract: i, Line. , for hFE, VfjE. & VCE (2N4348) 8-A specification for hFE, VBE. & VcE(Mt) (2N3773. 2N6259) 140 V min I2N4348). 160 V min (2N3773) 170 V min (2N6259) â'¢ Low saturation voltaga with high beta , FE Collector-to-Emitter Sustaining Voltage; Mm. 'B 2N6259 2N3773 Max. M»x
New Jersey Semiconductor
Original
2N434B 2N6269 100SI

2n6259

Abstract: °C COLLECTOR-TO-EMITTER VOLTAGE iVce) - V TYPICAL OUTPUT CHARACTERISTICS FOR TYPE 2N6259 BASE-TO-EMITTER VOLTAGE (VBf) - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N6259 Solid Power Corporation Ir I 1 1 I c a se tem , VOLTAGE (Va ) - V MAXIMUM OPERATING AREAS FOR TYPE 2N6259 BASE TO EMITTER VOLTAGE (V,> - V
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OCR Scan

2N4346

Abstract: 2N4348 2N6259 250 170 150 7 16 15 60 8 2 1.0 2.0 8 .8 2 1.0 0.B < I S 0.6 £ tu 1 0.4 0.2 COLlECTO , / / / 0.5 1 1.5 2 2.5 3 8ASE-TO-EMITTER VOITAGE (Vâ'žl - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N6259 , 2N6259 12 This Material Copyrighted By Solid Power Corporation Its Respective Manuf adirei- _ _ , OPERATING AREAS FOR TYPE 2N6259 CASE TEMPERATURE tTc> = 2J*C INDUCTANCE (L) = 40 mH
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2n6259 lf TIC 440 PU15I H151-

2n6259

Abstract: , encourages customers to verify rhnt datasheets are current before plncing orders 200 2N6259 NPN
New Jersey Semiconductor
Original

2N6259 amplifier

Abstract: 2N6259 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 DESCRIPTION ·DC Current Gain: hFE= 15-60@IC= 8A ·High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS ·Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE , INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 ELECTRICAL CHARACTERISTICS TC
INCHANGE Semiconductor
Original
2N6259 amplifier high power npn 8A 2N6259 inchange NPN Transistor 8A

2N6259

Abstract: 2N6259 amplifier Ã&MOSPEC HIGH POWER NPN SILICON TRANSISTORS The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and dc to dc converters or inverters. FEATURES: * High Power Dissipation PD = 150 W (Tc = 25°C) * High DC Current Gain and Low Saturation Voltage hFE = 15-60 @ lc = 8 A , VCE = 2 V vce(sat) = 1 0 v , 175 200 Tc , TEMPERATUREf °C) NPN 2N6259 16 AMPERE POWER TRANSISTORS NPN SILICON 150 VOLTS 150
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OCR Scan

2N6259

Abstract: Back to Bipolar Power Transistors 2N6259 M A X IM U M R A T IN G S - A b so lute-M axim um V alues: · · ^CBO. ^ CEO. 1 7 0 . V 1 5 0 . V 1 7 0 . V 7 , nits L im its T est C onditions C h a rac te ristic s 2N6259 C u rre n t (Ade) V oltage (Vdc) M in M ax
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OCR Scan
T0-204AA
Abstract: 2N6259 ^ 1 W ^NEW ENGLAND SEMICONDUCTOR MAXIMUM RATINGS - Absolute-Maximum Values: * ^CBO. * ^ CEO. * ^ C E X . * ^ E B O , CHARACTERISTICS, Tc = 25°C (unless otherwise specified) Units Limits Test Conditions Characteristics 2N6259 -
OCR Scan

Ultrasonic amplifier 50w

Abstract: 2N6259 amplifier 70 V hFE = 15-60 @ 10 A fT = 0.8 MHz min PT = 150W 2N6259 VCER(susl = 160 V hFE = 15«) ®8A fT = 0.6 , Voltage, General Purpose 2N3773 High-Current High Voltage, General Purpose 2N6259 High-Current High
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OCR Scan
ITO-220 2N1482 2N5786 2N3054 2N5298 2N344 Ultrasonic amplifier 50w ITO-391- ITO-2201 ITO-31

BDY29

Abstract: BD278 70 V hFE = 15-60 @ 10 A fT = 0.8 MHz min PT = 150W 2N6259 VCER(susl = 160 V hFE = 15«) ®8A fT = 0.6 , , General Purpose 2N3773 High-Current High Voltage, General Purpose 2N6259 High-Current High Voltage
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OCR Scan
2N6478 2N3055 BDY29 BD278 40349 2n377 2N5496 2N6103 2N3442 2N3771

RCA29

Abstract: RCA29B Hometaxial-Base n-p-n Type Selection Charts (cont'd) h V C E 0 (sus) V V C E X (sus) FE l V C E X -mA V V CE V C E (sat)-V V 'c A CE V Temp.-°C 25 'c A >B A 2N3773 FAMILY (n-p-n) High Current, High Voltage, General Purpose f » 0.7 MHz typ; P t o 250 W max T T JEDEC T O - 3 / T O - 2 0 4 M A Package 2 2 2 0.2 120 140 140 150 1 1.4 1.4 1 5 8 8 8 0.5 0.8 0.8 0.8 2N4348 2N3773* BDY37 2N6259 120 140 140 150 140^ 160^ 160
RCA
Original
RCA29 2N5293 2N5494 RCA29B rca 2N3773 2N5494 RCA DSA0058011 RCA29/SDH 2N5295 2N5296 RCA31/SDH RCA3054 RCA31A/SDH

2N4211

Abstract: 2N1514 1748-1620 1768-1410 2N1016E 2N2123 2N2758 2N3149 2N4950 2N6259 14 163-30 1748-1630 1768-1420 2N1016F
PowerTech
Original
2N4003 2N4211 2N6226 2N1016A 2N2753 2N6258 2N1514 2N2338 2N5928 2N2580 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046

transistor c118

Abstract: 2N6259 equivalent : 2N6258, 2N6259 IS /B rated to 300W (100V, 3.0A for 1 sec.) C-118 VßE(sat) - SATURATION
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OCR Scan
transistor c118 2N6258 equivalent

2N4348

Abstract: 2N6259 le c t r o n ic s in c . POW ER TRAN SISTORS PT TYPE NO. 2N3773 2N4348 M AXIM UM RATINGS @ Ic 25°C BV cbo B V ceo B V ebo V V V A Watts 150 120 250 160 140 170 140 120 150 7 FE @ Ic A 8 5 8 V'CE V 4 4 2 MIN MAX 15 15 15 60 60 60 Sat Voltages V ce V be V V 1.4 1.0 1.0 2 .2 2 ,0 Test Conditions Ib Ic A A 8 5 8 .8 .5 .8 leso ma 5 5 2 16 10 16 TO-3 2N6259 7 7 2.0 COUCCTO* TO-fMlTTf* VOLTAGE (V^i - V 0.2 0.4 0.6 0.8 1.0 1.2 ¡9 1.6 TYPICAL OUTPUT CHARACTERISTICS F O I TYPE 2N3773
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OCR Scan

2N6259

Abstract: 2n6258 Hometaxial-Base n-p-n Type Selection Charts (cont'd) h V C E 0 (sus) V V C E X (sus) FE l V C E X -mA V V CE V C E (sat)-V V 'c A CE V Temp.-°C 25 'c A >B A 2N3773 FAMILY (n-p-n) High Current, High Voltage, General Purpose f » 0.7 MHz typ; P t o 250 W max T T JEDEC T O - 3 / T O - 2 0 4 M A Package 2 2 2 0.2 120 140 140 150 1 1.4 1.4 1 5 8 8 8 0.5 0.8 0.8 0.8 2N4348 2N3773* BDY37 2N6259 120 140 140 150 140^ 160^ 160
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OCR Scan
Showing first 20 results.