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2N6109 Central Semiconductor Corp Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN visit Digikey Buy
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Part : 2N6109 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.5719 Price Each : $0.6439
Part : 2N6109G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 2,288 Best Price : $0.2990 Price Each : $0.8980
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Part : 2N6109G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 1,052 Best Price : $0.2570 Price Each : $0.2570
Part : 2N6109G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 265 Best Price : $0.3050 Price Each : $0.88
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Part : 2N6109 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 17 Best Price : $1.1250 Price Each : $1.1250
Part : 2N6109 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 55 Best Price : $0.7313 Price Each : $1.1250
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2N6109 Datasheet

Part Manufacturer Description PDF Type
2N6109 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 50V 7A TO-220 Original
2N6109 Central Semiconductor NPN SILICON TRANSISTOR Original
2N6109 Multicomp Complementary Power Transistors Original
2N6109 On Semiconductor POWER TRANSISTORS COMPLEMENTARY SILICON Original
2N6109 On Semiconductor Bipolar Power TO220 PNP 7A 50V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original
2N6109 On Semiconductor Complementary Silicon Plastic Power Transistor Original
2N6109 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6109 Boca Semiconductor EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Scan
2N6109 Central Semiconductor Power Transistors Scan
2N6109 Continental Device India POWER PACKAGE TRANSISTORS (PNP) Scan
2N6109 Continental Device India PNP Plastic Power Transistor Scan
2N6109 Continental Device India Semiconductor Device Data Book 1996 Scan
2N6109 Continental Device India TO-220 PNP Power Package Transistors Scan
2N6109 Crimson Semiconductor EPITAXIAL BASE Transistor Scan
2N6109 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N6109 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N6109 Ferranti Semiconductors Power Transistors 1977 Scan
2N6109 General Electric Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. Scan
2N6109 General Electric TRANSISTOR LEISTUNGS BIPOLAR Scan
2N6109 Magnatec General Purpose Complementary Pairs - Silicon Transistors in TO-220 Scan
Showing first 20 results.

2N6109

Catalog Datasheet MFG & Type PDF Document Tags

2n5292

Abstract: 2N6109 2N6107/09/11 2N6288/90/92 GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPTION The 2N6107, 2N6109, 2N6111 , the 2N6107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292, 2N6290 and 2N6288 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS Symbol PNP 2N6107 2N6109 2N6111 , Collector Cutoff Vce = 40V for 2N6111 /2N6288 0.1 mA Current Vc£= 60V for 2N6109/2N6290 0.1 mA (Vae , Vcs= 50V for 2N6109/2N6290 2 mA Vce= 70V for 2N6107/2NS292 2 mA leso Collector Cutoff VceÂ
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OCR Scan
BS5750 B0533 2n5292 2M6292 1-12-N LE17 2N6107/09/11-2N 2N6109/2NS290 2N6107/2N6292 2N6111/2N6288 09/2N6290

2N6107

Abstract: 2N6109 SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power , voltage 2N6109 VALUE -40 Open emitter -60 2N6111 Collector-emitter voltage -30 2N6109 Open base 2N6111 VEBO Emitter-base voltage V -80 2N6107 VCEO UNIT -50 , SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power Transistors , ) Collector-emitter sustaining voltage 2N6109 VBE TYP. MAX IC=-0.1A ;IB=0 V -50 -70
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Original
2N-6107 2N6109 pin

N629

Abstract: 2N6107 - 2N6109.2N6290-2N61072N6292 500US- 1 ms 5ms â'" 5 7 10 20 30 50 70 100 Vce. COLLECTOR EMITTER , > = 30 v (Min) ' 2N6111 â'¢ 2N6288 = 50 V (Min) -2N6109, 2N6290 = 70 V (Min) -2N6107, 2N6292 * DC , Devices MAXIMUM RATINGS THERMAL CHARACTERISTICS PNP NPN 2N6107 2N6288 2N6109 2 N6290 2N6111 2N6292 Characteristic Symbol 2N6111 2N6288 2N6109 2N6290 2N6107 2N6292 Unit Collector-Emitter Voltage VCEO 30 50 70 V , 2.98 O 3.70 3.90 2N6107, 2N6109, 2N 6111 PNP 12N6288, 2N6290, 2N6292 NPN ELECTRICAL CHARACTERISTICS
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OCR Scan
N629 bi 370 transistor e Scans-0063468 VCC-30V
Abstract: , 2N6109, 2N6111, 2N6288, 2N6290 and 2N6292 are epitaxial-base silicon transistors In Jedec TO , applications. The PNP types are the 2N6107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292 , 2N6109 2N6111 NPN Symbol 2N6292 2N6290 2N6288 Unit VcBO Collector-base Voltage (lE = 0 , 2N6111/2N6288 for 2N6109/2N6290 for 2N6107/2N6292 Min. Max. Unit 0.1 0.1 0.1 mA mA mA for 2N6111/2N6288 for 2N6109/2N6290 for 2N6107/2N6292 2 2 2 mA mA mA Typ. I -
OCR Scan
7TBT537 2N6107/09/11-2N6288/90/92 6111/2N 2N6109/2N 6107/2N 2N6111/2N
Abstract: )227-6005 FAX: (973) 376-8960 PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 , ) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 â'¢ High Current Gain - Bandwidth Product f T = 4.0 MHz , Symbol Collector-Emitter Voltage 2N6111.2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Value Unit Vdc VCEO 30 50 70 VCB Vdc 40 60 , \ S \ 3 PD, POWER DISSIPATION (WATTS) PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 New Jersey Semiconductor
Original

2n6111

Abstract: 2n6288 ORDERING INFORMATION Device 2N6107 2N6107G 2N6109 2N6109G 2N6111 2N6111G 2N6288 2N6288G 2N6292 2N6292G , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors , - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , Symbol 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO Value 30 50 70 40 , , LLC, 2011 October, 2011 - Rev. 9 PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 40 PD
ON Semiconductor
Original
2N6107/D

1N5825

Abstract: 2N6107 2N6109 * . . . designed for use in general-purpose amplifier and switching applications. 2N6111 , Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , Collector-Emitter Voltage Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 4 Unit VCEO 30 50 , March, 2006 - Rev. 6 1 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 , , 2N6292 2N6109 2N6111, 2N6288 All Devices Min Max 30 50 70 - - - - - -
ON Semiconductor
Original
1N5825 MSD6100

2N6290

Abstract: 2N6109 equivalent 2N6109, 6290 Complementary Power Transistors Features: · Collector-Emitter sustaining voltageVCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. · DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. · Complementary Silicon Plastic Power Transistors. PNP NPN 2N6109 2N6290 Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C , -220 Dimensions : Millimetres Page 1 31/05/05 V1.0 2N6109, 6290 Complementary Power Transistors
Multicomp
Original
2N6109 equivalent equivalents transistor 2n6109

2N6107

Abstract: 2N6111/2n6288 designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , Temperature Range 2N6109 2N6107 2N6292 Unit 50 70 Vdc 40 VCEO VCB 2N6111 2N6288 , . 5 1 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER , 2N6109 2N6111, 2N6288 All Devices Min 150 150 150 - hFE - ON CHARACTERISTICS (1
ON Semiconductor
Original
220AB

2N6109

Abstract: 2N6292 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , Sustaining Voltage VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - , 40 60 80 2N6111, 2N6288 2N6109 2N6107, 2N6292 2 3 Vdc 30 50 70 2N6111, 2N6288 2N6109 2N6107, 2N6292 1 VEB 5.0 IC 7.0 10 Adc Base Current IB 3.0 Adc
ON Semiconductor
Original
TO-220AB transistor package 70ADC
Abstract: Device 2N6107G 2N6109G 2N6111G 2N6288G 2N6292G Device Marking 2N6107 2N6109 2N6111 2N6288 2N6292 Package , 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors , Collector-Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107 , , 2013 - Rev. 10 Publication Order Number: 2N6107/D 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 , CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107 ON Semiconductor
Original
Abstract: for use in general-purpose amplifier and switching applications. â'¢ â'¢ â'¢ â'¢ 2N6109 , 30 Vdc (Min) â'" 2N6111, 2N6288 = 50 Vdc (Min) â'" 2N6109 = 70 Vdc (Min) â'" 2N6107, 2N6292 High , Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit v CEO 30 50 70 Vdc C o , , Inc. 1995 (W) MOTOROLA 2N6107 2N6109 2N6111 2N6288 2N6292 â'˜ ELECTRICAL CHARACTERISTICS (T , 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 40 Vdc, V EB(off) = 1.5 (VC E -
OCR Scan
2N6057 2N6059 2N6050

2N6292

Abstract: 2N6109 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , ·Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc , , 2N6288 2N6109 2N6107, 2N6292 Emitter-Base Voltage 2 3 Vdc 30 50 70 2N6111, 2N6288 2N6109 2N6107, 2N6292 1 Vdc 40 60 80 VEB 5.0 IC 7.0 10 Adc Base Current
ON Semiconductor
Original

2N6288

Abstract: 2N6111 designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit VCEO 30 , Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER DISSIPATION (WATTS) 40 , 30 30 2.3 2N6107, 2N6292 2N6109 2N6111, 2N6288 All Devices Min 150 150 150 - hFE
ON Semiconductor
Original

2N6292G

Abstract: 2N6292 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , ) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 High Current Gain - Bandwidth Product fT = 4.0 MHz (Min , Vdc 30 50 70 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage VCB 2N6111, 2N6288 2N6109 2N6107, 2N6292 Emitter-Base Voltage MARKING DIAGRAM 4 TO-220AB CASE 221A
ON Semiconductor
Original
300 watts amplifier circuit diagram pnp power 2N6107-D marking code SUs 15
Abstract: '220AB (Pbâ'Free) 2N6109 2N6109G TOâ'220AB (Pbâ'Free) 2N6111 TOâ'220AB (Pbâ'Free) 50 Units , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power , Collectorâ'Emitter Sustaining Voltage â' VCEO(sus) = 30 Vdc (Min) â' 2N6111, 2N6288 = 50 Vdc (Min) â' 2N6109 = , (Note 1) Rating Symbol Collectorâ'Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collectorâ'Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Emitterâ'Base Voltage VCEO VCB Value ON Semiconductor
Original

2N6107

Abstract: 2N6109 designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , _C Derate above 25_C Operating and Storage Junction Temperature Range 2N6109 2N6107 2N6292 Unit , 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 , 30 30 2.3 2N6107, 2N6292 2N6109 2N6111, 2N6288 All Devices Min 150 150 150 - hFE
ON Semiconductor
Original

2N8111

Abstract: 2N6107 Coliector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vd0 (Min) - 2N 61 11, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 , 2N6107 2N6109* 2N6111 NPN 2N6288 2N6292* "Motorola Prtferrtd D«vlc« PNP · 'MAXIMUM RATINGS , Junction Temperature Range Symbol VCEO VCB Ve b 2N8111 2N628S 30 40 2N6109 50 60 5.0 7.0 10 3.0 40 0.32 - 6 , Motorola Bipolar Power Transistor Device Data 3-101 2N6107 2N6109 2N6111 2N6288 2N6292 ' ELECTRICAL , Sustaining Voltage (1) (IQ - 100 mAdc, Ib - 0) VCEO(sus) 2N6111, 2N6288 2N6109 2N6107, 2N6292 'CEO 2N6111
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OCR Scan
2N811 T0-220AB

2N6109

Abstract: 2n6107 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 PNP NPN w w w. c e n t r a l s e m i . c o m , Storage Junction Temperature Thermal Resistance 2N6111 2N6109 2N6107 SYMBOL 2N6288 2N6290 2N6292 VCBO 40 , =20V (2N6111, 2N6288) ICEO VCE=40V (2N6109, 2N6290) ICEO VCE=60V (2N6107, 2N6292) IEBO VEB=5.0V BVCEO IC=100mA (2N6111, 2N6288) 30 BVCEO IC=100mA (2N6109, 2N6290) 50 BVCEO IC=100mA (2N6107, 2N6292) 70 VCE(SAT) VBE(ON , =4.0V, IC=2.5A (2N6109, 2N6290) VCE=4.0V, IC=3.0A (2N6111, 2N6288) VCE=4.0V, IC=7.0A VCE=4.0V, IC=0.5A, f
Central Semiconductor
Original

2n6111

Abstract: 2n6292 transistor in general-purpose amplifier and switching applications. 2N6107 2N6109 * 2N6111 NPN · DC , , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 High Current Gain - Bandwidth Product , ÎÎÎ *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD 2N6111 2N6288 30 40 2N6109 50 60 2N6107 , April, 2002 - Rev. 5 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 40 PD , 2N6111, 2N6288 2N6109 2N6107, 2N6292 30 50 70 - - - Collector Cutoff Current (VCE = 20 Vdc, IB = 0
ON Semiconductor
Original
2n6292 transistor 2N6111 pin

2N6109

Abstract: 2N6107 .5V tcase=150°C 'CEX 2N6109 -2 mA VCE =-37,5 V VBE = 1-5V 2N6111 -0,1 mA VCE = -30 V VBE = 1,5 V
-
OCR Scan
PNP 2n series 2N 6107 an 6107 ZA2N CB-117

2N6292

Abstract: motorola 2N6109 transistor (See 2N6050) Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . , ) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292 · High Current Gain - , 2N6107 2N6292 Unit 50 70 Vdc 40 VCEO VCB Collector­Base Voltage 2N6109 30 , 1.0 30 30 30 2.3 2N6107, 2N6292 2N6109 2N6111, 2N6288 All Devices Min 150 150 150 , , 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60
Motorola
Original
motorola 2N6109 transistor 2n6107 MOTOROLA 2N6057 MOTOROLA 2n6292r
Showing first 20 results.