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2N6107 Central Semiconductor Corp Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN visit Digikey Buy
2N6107 LEAD FREE Central Semiconductor Corp TRANS PNP 70V 7A TO-220 visit Digikey Buy

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Part : 2N6107 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.5539 Price Each : $0.6049
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Part : 2N6107G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 130 Best Price : £0.2880 Price Each : £0.4830
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2N6107 Datasheet

Part Manufacturer Description PDF Type
2N6107 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 70V 7A TO-220 Original
2N6107 Central Semiconductor NPN SILICON TRANSISTOR Original
2N6107 Micro Commercial Components TRANS GP BJT PNP 70V 7A 3TO-220 Original
2N6107 On Semiconductor Complementary Silicon Plastic Power Transistors Original
2N6107 On Semiconductor Bipolar Power TO220 PNP 7A 70V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original
2N6107 STMicroelectronics TRANS GP BJT PNP 70V 7A 3TO-220 Original
2N6107 STMicroelectronics SILICON PNP SWITCHING TRANSISTORS Original
2N6107 USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. Original
2N6107 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6107 Boca Semiconductor EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Scan
2N6107 Central Semiconductor Power Transistors Scan
2N6107 Continental Device India POWER PACKAGE TRANSISTORS (PNP) Scan
2N6107 Continental Device India Plastic Power Transistor Scan
2N6107 Continental Device India Semiconductor Device Data Book 1996 Scan
2N6107 Continental Device India TO-220 PNP Power Package Transistors Scan
2N6107 Crimson Semiconductor EPITAXIAL BASE Transistor Scan
2N6107 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N6107 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N6107 Ferranti Semiconductors Power Transistors 1977 Scan
2N6107 General Electric Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. Scan
Showing first 20 results.

2N6107

Catalog Datasheet MFG & Type PDF Document Tags

2n5292

Abstract: 2N6109 2N6107/09/11 2N6288/90/92 GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPTION The 2N6107, 2N6109, 2N6111 , the 2N6107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292, 2N6290 and 2N6288 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS Symbol PNP 2N6107 2N6109 2N6111 , . England 2N6107/09/11-2N 628 8/90/9 2 THERMAL DATA Rth j-cas« Thermal Resistance Junction-case Max 3.12 , =-1-5 V) Vc£= 80V for 2N6107/2NS292 0.1 mA Tc* 150°C Vce= 30V for 2N6111/2N6288 2 mA
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OCR Scan
BS5750 B0533 2n5292 2M6292 1-12-N LE17 2N6107/09/11 2N6107/09/11-2N 2N6109/2NS290 2N6107/2N6292 09/2N6290

2n6111

Abstract: 2n6288 ORDERING INFORMATION Device 2N6107 2N6107G 2N6109 2N6109G 2N6111 2N6111G 2N6288 2N6288G 2N6292 2N6292G , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors , - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , ) @ IC = 500 mAdc - 2N6107, 09, 11 TO-220AB Compact Package Pb-Free Packages are Available* Rating Symbol 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO Value 30 50 70 40
ON Semiconductor
Original
2N6107/D

2N6107

Abstract: 2N6109 SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power , Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6107 VCBO Collector-base , 2N6109 Open base 2N6111 VEBO Emitter-base voltage V -80 2N6107 VCEO UNIT -50 , SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6107 VCEO(SUS
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Original
2N-6107 2N6109 pin
Abstract: 2N6107/09/11 2N6288/90/92 3DE 3 > GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPTION The 2N6107 , applications. The PNP types are the 2N6107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292, 2N6290 and 2N6288 respectively. INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS PNP 2N6107 , 2N6107/09/11-2N6288/90/92 THERMAL DATA Rth j-case Rth j-amb 7 c 2 c 237 l ] 002=3368 b 6 , 2N6111/2N6288 for 2N6109/2N6290 for 2N6107/2N6292 Min. Max. Unit 0.1 0.1 0.1 mA mA -
OCR Scan
7TBT537 2N6107/09/11-2N6288/90/92 6111/2N 2N6109/2N 6107/2N 2N6111/2N
Abstract: )227-6005 FAX: (973) 376-8960 PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 , ) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 â'¢ High Current Gain - Bandwidth Product f T = 4.0 MHz (Min) @ Ic = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ Ic = 500 mAdc - 2N6107, 09, U â'¢ TO , Symbol Collector-Emitter Voltage 2N6111.2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Value Unit Vdc VCEO 30 50 70 VCB Vdc 40 60 New Jersey Semiconductor
Original

N629

Abstract: 2N6107 > = 30 v (Min) ' 2N6111 â'¢ 2N6288 = 50 V (Min) -2N6109, 2N6290 = 70 V (Min) -2N6107, 2N6292 * DC , Devices MAXIMUM RATINGS THERMAL CHARACTERISTICS PNP NPN 2N6107 2N6288 2N6109 2 N6290 2N6111 2N6292 Characteristic Symbol 2N6111 2N6288 2N6109 2N6290 2N6107 2N6292 Unit Collector-Emitter Voltage VCEO 30 50 70 V , 2.98 O 3.70 3.90 2N6107, 2N6109, 2N 6111 PNP 12N6288, 2N6290, 2N6292 NPN ELECTRICAL CHARACTERISTICS , Collector - Emitter Sustaining Voltage (1) (lc = 100 mA, lB = 0) 2N6111, 2N6288 2N6109, 2N6290 2N6107
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OCR Scan
2N6290-2N61072N6292 N629 bi 370 transistor e Scans-0063468 500US- VCC-30V

1N5825

Abstract: 2N6107 ON Semiconductor ) PNP 2N6107 Complementary Silicon Plastic Power Transistors , Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11 TO-220AB Compact Package 2N6292* *ON , Collector-Emitter Voltage Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 4 Unit VCEO 30 50 , March, 2006 - Rev. 6 1 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292
ON Semiconductor
Original
1N5825 MSD6100
Abstract: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 , 30 Vdc (Min) â'" 2N6111, 2N6288 = 50 Vdc (Min) â'" 2N6109 = 70 Vdc (Min) â'" 2N6107, 2N6292 High , ) @ I q = 500 mAdc â'" 2N6107, 09, 11 T O -220A B Compact Package 2N6111 NPN 2 N 62 88 2N 62 , Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit v CEO 30 50 70 Vdc C o , , Inc. 1995 (W) MOTOROLA 2N6107 2N6109 2N6111 2N6288 2N6292 â'˜ ELECTRICAL CHARACTERISTICS (T -
OCR Scan
2N6050

2N6107

Abstract: 2N6111/2n6288 ON Semiconductor ) PNP Complementary Silicon Plastic Power Transistors 2N6107 . . . , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , (Min) @ IC = 500 mAdc - 2N6107, 09, 11 TO­220AB Compact Package 2N6292* *ON Semiconductor , Temperature Range 2N6109 2N6107 2N6292 Unit 50 70 Vdc 40 VCEO VCB 2N6111 2N6288 , . 5 1 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER
ON Semiconductor
Original
equivalents transistor 2n6109

2N6107

Abstract: 2N6111 2N6107 2N6111 ® SILICON PNP SWITCHING TRANSISTORS s s STMicroelectronics PREFERRED , DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic , Unit 2N6107 2N6111 40 V CBO Collector-Base Voltage (I E = 0) 80 V CEX , PNP devices voltage and current values are negative February 2001 1/4 2N6107/2N6111 THERMAL , for 2N6107 for 2N6111 Unit 0.1 0.1 1 1 mA mA 1 I CEO Max. V CE = 80 V V
STMicroelectronics
Original
2N6107 datasheets 2N6107/2N6111 P011C

2n6107

Abstract: 2N6111 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP , The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N6107 2N6111 , voltage and current values are negative June 1997 1/4 2N6107/2N6111 THERMAL DATA R t hj-ca se , 2N6107 for 2N6111 o T C = 150 C for 2N6107 for 2N6111 Test Cond ition s V CE = 80 V V CE = 40 V
STMicroelectronics
Original
BD534

2N6292

Abstract: 2N6109 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , (Min) - 2N6107, 2N6292 ·High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11 ·TO-220AB Compact Package ·Pb-Free , , 2N6288 2N6109 2N6107, 2N6292 Emitter-Base Voltage 2 3 Vdc 30 50 70 2N6111, 2N6288
ON Semiconductor
Original

2N6109

Abstract: 2N6292 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , 2N6107, 2N6292 ·High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11 ·TO-220AB Compact Package ·Pb-Free Packages are , 40 60 80 2N6111, 2N6288 2N6109 2N6107, 2N6292 2 3 Vdc 30 50 70 2N6111, 2N6288
ON Semiconductor
Original
TO-220AB transistor package 70ADC

2N6107

Abstract: 2N6109 ON Semiconductor ) PNP Complementary Silicon Plastic Power Transistors 2N6107 . . . , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , (Min) @ IC = 500 mAdc - 2N6107, 09, 11 TO­220AB Compact Package 2N6292* *ON Semiconductor , _C Derate above 25_C Operating and Storage Junction Temperature Range 2N6109 2N6107 2N6292 Unit , Components Industries, LLC, 2002 April, 2002 ­ Rev. 5 1 Publication Order Number: 2N6107/D
ON Semiconductor
Original
Abstract: Device 2N6107G 2N6109G 2N6111G 2N6288G 2N6292G Device Marking 2N6107 2N6109 2N6111 2N6288 2N6292 Package , 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors , Collector-Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107 , , 2013 - Rev. 10 Publication Order Number: 2N6107/D 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 , CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107 ON Semiconductor
Original

2N6292G

Abstract: 2N6292 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , ) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11 TO-220AB Compact , Vdc 30 50 70 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage VCB 2N6111
ON Semiconductor
Original
300 watts amplifier circuit diagram pnp power 2N6107-D marking code SUs 15
Abstract: INFORMATION Device Device Marking Package 2N6107 2N6107G TOâ'220AB 2N6107 TOâ , PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power , 70 Vdc (Min) â' 2N6107, 2N6292 High Current Gain â' Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc â' 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc â' 2N6107, 09, 11 TOâ'220AB Compact , (Note 1) Rating Symbol Collectorâ'Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 ON Semiconductor
Original

2N6292

Abstract: motorola 2N6109 transistor MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . , ) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292 · High Current Gain - , - 2N6107, 09, 11 · TO­220AB Compact Package 2N6111 NPN 2N6288 * 2N6292 , 2N6107 2N6292 Unit 50 70 Vdc 40 VCEO VCB Collector­Base Voltage 2N6109 30
Motorola
Original
motorola 2N6109 transistor 2n6107 MOTOROLA 2N6057 MOTOROLA 2n6292r

2N6288

Abstract: 2N6111 ON Semiconductort PNP Complementary Silicon Plastic Power Transistors 2N6107 . . . , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , (Min) @ IC = 500 mAdc - 2N6107, 09, 11 TO­220AB Compact Package 2N6292* *ON Semiconductor , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit VCEO 30 , Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER DISSIPATION (WATTS) 40
ON Semiconductor
Original

2N6109

Abstract: 2n6107 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types , Storage Junction Temperature Thermal Resistance 2N6111 2N6109 2N6107 SYMBOL 2N6288 2N6290 2N6292 VCBO 40 , =20V (2N6111, 2N6288) ICEO VCE=40V (2N6109, 2N6290) ICEO VCE=60V (2N6107, 2N6292) IEBO VEB=5.0V BVCEO IC=100mA (2N6111, 2N6288) 30 BVCEO IC=100mA (2N6109, 2N6290) 50 BVCEO IC=100mA (2N6107, 2N6292) 70 VCE(SAT) VBE(ON
Central Semiconductor
Original

2N6109

Abstract: 2N6107 2N6107 -0,1 mA VCE = -70 V VBE = 1,5V 'case = 150 °C 2N 6107 -2 mA VCE = -56 V Vbe = 1,5V 2N 6109 , 2N 6109 2N 6111 -80 -60 -40 V V V VCE=-4V lc =-3A 2N6107 30 150 Static forward current transfer , =-4V lc =-3A 2N6107 -1,5 V Base-emitter voltage Tension base-émetteur VCE = -4V lc = -2,5 A VBE* 2N
-
OCR Scan
PNP 2n series 2N 6107 an 6107 ZA2N CB-117
Abstract: r Z 7 SGS-THOMSON Ã" 7 # RaoeifäoiiLiÃra©«! 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . PNP TRANSISTORS APPLICATIONS: . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in , devices voltage and current values are negative June 1997 1/4 2N6107/2N6111 THERMAL DATA , (siraÃS MHz 250 PF 2N6107/2N6111 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch -
OCR Scan
Showing first 20 results.