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Part Manufacturer Description PDF & SAMPLES
HPA00614DRCR Texas Instruments 750mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC with Thermal Regulation 10-SON 0 to 125
DM388AAARD21F Texas Instruments DaVinci Digital Media Processor 609-FCBGA -40 to 95
OPA191IDGKT Texas Instruments Low-Power, Precision, 36-V, e-trim CMOS Amplifier 8-VSSOP -40 to 125
TPD1E0B04DPLT Texas Instruments 1-Channel ESD Protection Diode for USB Type-C and Antenna Protection 2-X2SON -40 to 125
MSP430FR59891IPMR Texas Instruments MSP430FR59891 16 MHz ULP Microcontroller featuring 128 KB FRAM, 2 KB SRAM, 48 IO, ADC12, ScanIF, AE 64-LQFP -40 to 85
MSP430F67621AIPZ Texas Instruments MSP430F676x1A Polyphase Metering SoCs 100-LQFP -40 to 85

2N602(A) Datasheet

Part Manufacturer Description PDF Type
2N602A N/A Transistor Shortform Datasheet & Cross References Scan
2N602A N/A Shortform Transistor PDF Datasheet Scan
2N602A N/A Shortform Transistor Datasheet Guide Scan
2N602A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan

2N602(A)

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PUTs Planar, TO-92, Plastic 2N6027-2N6028 FEATURES â'¢ TO-92 Plastic Package â'¢ Maximum Peak Current: 150nA â'¢ Minimum Valley Current: 1.5mA â'¢ Peak Forward Current: 5A â'¢ Programmable Eta, RBB, lp and lv â'¢ Planar Passivated Construction for Maximum Reliability and Parameter , cost timing circuits, oscillators, sensing circuits and a wide range of other applications where a , -
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2N6027 N6028 2N602 PUT 2N6027/2N6028 PUT 2N6027 equivalent transistor of 2n6027 PUT 2N6028 UNITRODE U-66 2N6028
Abstract: 2N602A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC) I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain. @I(C) (A) (Test Condition)500u @V(CE) (V) (Test Condition)1.0 h(fe) Min. SS Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) f(T) Min. (Hz) Transition Freq12M @I(C) (A American Microsemiconductor
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Abstract: 2N602 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.20 h(FE) Max. Current gain.80 @I(C) (A) (Test Condition)500u @V(CE) (V) (Test Condition)1.0 h(fe) Min. SS Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) f(T) Min. (Hz) Transition Freq10M¦ @I(C) (A American Microsemiconductor
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Abstract: LOW-POWER GERMANIUM PNP Item Number Part Number Manufacturer Y{BR)CBO (V) hFE Ie Max (A) fT (Hz) Cobo Max (F) leBO Max (A) Y(BR)CEO M 20 25 25 30 25 35 15 35 25 25 25 30 PD , 100 S 100 S 75 A 100 J 100 J 100 S 100 S 100 J 60 J 60 J 100 J 100 J 100 J 75 J 100 J 100 A 100 A , 10~+ 100 100 J Can Can 60 J 100 J StF-1/4 100 TO-5 TO-5 100 A Can 100 A Axial 100 J TO-5 100 ~_ 100 , :~ TO-9 TO-5 TO-5 TO-5 TO-9 TO-l TO-5 TO-5 TO-l TO-l TO-33 TO-7 TO-45 TO-58 N/A N/A TO-5 Can TO-9 TO Advanced Semiconductor
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2N466 CK66A 2N600 2N2374 ASZ20 2N218 Low-Power Germanium PNP 2N295 25P40p Diode 13M 2N422 2N217 2N274 2N633 2N1415 2N1866
Abstract: LOW-POWER GERMANIUM PNP Item Number Part Number Manufacturer V(BR)CBO (V) hFE Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max (A) V(BR)CEO (V) PD Max (W) Derate at (WrC , S 1005 100 S 75 A 100 J 100 J 100 S 100 S 100 J 100 J 100 S 2.5m 3.1m 2.0m 800u 588u 1.7m 1.3m , J 100 S 100 S 100 S 100 S 100 S 100 J 100 J 100 J TO·9 TO·5 N/A TO·9 TO· 17 TO· 17 TO·72 TO·7 T0-18 TO·9 TO·9 TO·9 TO·9 TO·9 TO·9 TO·9 T0-22 TO·22var TO·5 N/A NfA N/A TO·5 TO·5 TO·l TO·5 TO·9 TO-17 Can Advanced Semiconductor
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2SA239 asz21 AF117 2G381 AF114 2n2398 2N1158 2N615 2N2966 2N1158A 2N3399
Abstract: -_ _ - _ - - 2G322 2G323 2G324 _ _ - 2G394 _ _ - 2G395 _ 2G396 _ - â'" 2G526 - - 2G527 - - 2N35 T022 2N43 2N57 A TOIO _ - - -_ - - - - - SUB 2G228 2G230 2G231 , A _ - - TO 5 T05 T05 TO 5 TO 5 T09 -T05 T05 TO 5 TO 5 T05 TO 5 -TO 5 -TO 5 -T022 TO 5 T022 A TOIO , T022 T022 2N211 2N102/13 T013 T09 2N331 GA53270 T022 (Vc) 2N188 ( A , Pc) 2N192 (Pc) 2N217 2N324 2N362 , ) 2N241 (Pc) CK759 2N315 2N315A 2N315A CK760 2N139 (Pc, A Vc, Ic) 2N409 ( A , Pc, Vc, Ic) 2N410 (Pc, A -
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2N1136b 2n189 2T312 2N420 B1151 EQUIVALENT 2SC42 2G101 2G102 2G103 2G109 2G220 2G221
Abstract: . 5 A Guide to Making Transistor Substitutions.7 SECTION 1 American , repair cannot be completed unless a suitable substitute can be found. Paradoxically, the same conditions that lead to a limitless variety of transistors also make substitutions quite feasible. The present , rise to a great many transistors having nearly identical characteristics. In addition, transistors having identical electrical characteristics are encapsulated in a number of different cases, and in many -
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ST25C transistor transistor 2N4 TFK 808 2N407 transistor GE2 TRANSISTOR 2N1177
Abstract: , 2N34-43-60-191-220-331, OQOQ A 0 1 O C .1 C O OC58-71-304, NKT264, 2SB221, AC122-163, ASY26, 2N45-65-105-109-111-112-113 , -140-318,7 c; NKT734, 2N357, 2SD11, AP1 1 7 -1 5 * * A Q V OC318, 2N391-561, 2SB246, NKT452, AC106 , , 2N247-370-407-408-544641-642-643-644. AF126, 2N247-370-407-408-540,640-641 -642643-644. A F127, 2N247-640-641 -
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AC127 2SB415 ad142 ac128 HJ17D CV7089 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C
Abstract: 27-18 LH0002C LH0002CN 586-81!) .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH0005C 586-495 DAC08CZ 587-896 27 + R ef | 1 _ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A , ANALOG OUT 3 l~u~l1 -12V NH0014C 586-894 DPDT ANALOG SWITCH GND â'¢ ANALOG INPUTS \ CONTROLS 3 , SWITCH +V1 (SUBSTRATE AND CASE) PAGE 5 A 27-18 I.M 201A 586-559 AMPEX O PERATIO N AL AM PLIF IE R COMPENSATION LM 202 586-552 SAME CONNECTIONS AS LM102 3-5 LM206 >86-560 VOLTAGE FOLLOWER -25 â'™ c to 85 -
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SN72710L MC1013P MC680P MC838P 723HC MC1670L DH0034 78M12HC MMH0026CG 79M12AHC D125BK D129BK
Abstract: 61 9. 2 N6 20. 2N6 21 .2N 1074 .2 N1 07 5. 2N 10 76 , 2N1077 .2N 117 3 2N 43 .2 N 43 A. 2 N4 4 . 2 N 5 9 A .2 N 5 9 B . 2 N 5 9 C . 2 N 6 0 A , 2N60B .2N60C.2N61A 2N34»2N3e,2N45,2Nl04,2N105.2N109,2Nin. 2NH1A.2N112.2N112A 2N 21 3 . 2 N 2 1 4 , 2 N 3 7 7 A . 2 N 38 5 A , 2 N 3 8 8 A , 2 N 5 7 6 A . 2N 58 7. 2 N7 07 A. 2N7 83 .2N 834 2N 3 4 . 2 N 3 4 A . 2 N 3 7 . 2 N 3 8 . 2 N 6 3 .2N65.2N104,2N:.05 2N1 08.2N109 , 124 2 N 4 3 .2 N4 3A . 2N 44 . 2N 11 0 .2N 327 A. 2N 32 8A .2 N3 29 Ai 2N 33 0A .2 N39 6B .2N 41 4B 2N -
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2N277 N1702 L204A 2SA63 2N979 2SB311 2N59A 2N59B 2N60A 2N61B 2N61C 2N101/13
Abstract: 7 Cross-Reference/Substitution L istin g . Page 45 ©Copyright 1974, Radio Shack, A Tandy Corporation Company, Fort Worth, Texas 76107 Printed in U.S.A. 1 , (and thus the need for replacement). Also, a com­ plete section on the specifications for each of the , mechanical shock; however, it is always a good idea to keep them from excessive mechanical shock (avoid , cutting tools which use a crimping action). Crimp type cutting tools produce a mechanical shock along the -
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980510 2sb337 LS 2027 audio amp 2N339 C24850772 bc149c
Abstract: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a , ; HobbyistExperimenter and Replacement (which includes the â' Equal-or-Betterâ' series numbered 600 and higher.) IMPORTANT TIPS On Using Semiconductors â' EQUAL-OR-BETTERâ' SERIES â'" These devices have been very , safely â' designâ' his own circuits and realize the maximum device capabilities. For the Pro , its published specifications, however, due to the very nature of the term â' universalâ' there are -
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hep R1751 triac zd 607 motorola HEP 801 zy 406 transistor F82Z RS5743.3 ZU62B ZU110 ZU110A ZV12B ZV27B ZV33B
Abstract: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The , specifications and outline drawings of these ECG products as well as a replacement section which cross , a solid state repair kit, the ECG303, containing the most recent replacement guide and the most commonly used sem iconductors from the line-packaged small enough to fit into a tube caddy and replacing , if mounting space is a problem. Replacement in untuned stages can generally be made with a minimum -
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st178 CK705 ME1120 diode E1110 CS1256H 1N733A 8M-26102 66X0003-001 68X0003-001 CX-9000 T-E0317 R32077-1
Abstract: 1969 o < 00 x ic e uo , give m axim um efficiency: tungsten carbide capillary tip , heated shank and power supply th a t , 'R E E S Tempress I industries, Inc., 9 8 0 U niversityAve., Los Gatos, C a li f . 9 5 0 3 0 , a low frequency scope for your dc to 500 kHz measurements. And, only variable persistence gives , storage CRTs have a life expectancy comparable to HP conventional CRTs. The new HP 1201A (cabinet) and -
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RCA SK CROSS-REFERENCE pa189 pt 3570 trw rf 2N3017 2N2505 2N3035 and applications
Abstract: . 5 A Guide to Making Transistor Substitutions.7 SECTION 1 Transistor S u b , Substitutes and Applications . . . 93 Bâ'"Alphabetical Listing of A pplications , be readily available. This means the repair cannot be completed unless a suitable substitute can be found. Paradoxically, the same conditions that lead to a limitless variety of transistors also make , available transistor types. This gives rise to a great many transistors having nearly identical -
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AS218 transistor 2N2654 RCA H 541 diode germanium 1n283 gex 74a substitutes
Abstract: and corresponding Semicon Index codes HOUSE CODE MANUFACTURER SEMICON CODE A5.7.8 A APD B C CK CR D DD DV ED ES.Ergf GE â' HEP % IR ' ' IT K KD,P,r L M ME MEM â'˜ , , mhm \y /â'¢< MR,M2 MS MT NK N,NL OA.OC PET PC PG PN PT R SC SD SE SK SP ST Tl TR U VR , TRW Power Semiconductors Texas Instruments General Electric Solitron Devices , Fairchild *â , Japjrfese^S frequently omitted) USj&J-vjfe'&ec Standard ' > â'¢â'Japanese FET â'˜ RCA TIB, Til GES PDA -
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2M222 8D139 2SC1313 equivalent hitachi 2SJ82 RCA 40934 transistor Avantek rf amplifier UAA-8616M T0226 T0237
Abstract: â'™â vV '-tv v 't i D.A.T.A., Inc. A Cordura Company 9889 Willow Creek Rd. P. (). Bjx , , Manufacturers Service Representative ENGINEERING EDITORS Kerin Klukowski Janice H. Perley Frederick A. West , 1982 â'" EDITION 52 26,150 TYPES 133 MANUFACTURERS TABLE OF CONTENTS EDITORIAL , Emeryville, CA 94608 D.A.T.A. Inc., is a subsidiary of CORDURA PUBLICATIONS. INC. 9889 Willow Creek Rd. P.O. Box 26260, San Diego, CA 92125 President â'" Cal Kobrin Vice President and Publisher â'" Allen -
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c547b equivalent PTC SY 16P ptc 75s 2SA1030C ZN107 2SD2021 201069F S-171 CH-5400
Abstract: SEMICON INDEXES volume: i INTERNATIONAL TRANSISTOR INDEX 23nd EDITION 1997/8 â \ 1 .5 â'¢ K â  * j. n v jri U Contents and Introduction Manufacturers' Information Bipolar Transistors , 85 9 Copyright © Semicon Indexes 1997: no part of this book may be reproduced in any form, by , compilers and publishers. All material herein is presented as a careful summary of data on semiconductors , such mention does not imply that the data is free of such rights. Where a company or product logo or -
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MZ 13001 TRANSISTOR BD559 w3819b field effect transistor Transistor B0243C 7119 amperex NEC Tokin oe 907 VV276
Abstract: 20MN 20MN 20MN 20MN 500MA 2MA 2MA 10MA 10MA AMG RLA RLA RLS RLS TIB ACY22 â'¢ TIB ASZ21 â ' 2N2273 , ISA 15A 20A AHH AHG AHG AHG AHG TIB TIB TIB TIB TIB ASZ15 â'" AUY29 AUY29/5 AUY29/5 AUY29/5 2N1533 , RLA TIB TIB TIB TIB TIB AL103 â'" 0C44N 0C44N 0C44N 0C44N 2N2147 2N2614 2N2614 2N2614 2N2614 0 0 0 , 2WF 4NC IMF AHG 50MA AMG AHG PCT ALG OBS OBS OBS OBS OBS A0162 â  2N2835 2N2706 AC128 AD162 2N2835 , 2N3965 OBS BC177 â  2N3965 RCU ASY29 2N1304 OBS ASY29 2N1304 0 0 0 0 0 20/50 25/75 20/50 25/75 100MN -
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2N2222A 338 TFK 949 halbleiter index transistor BSY19 ad161 ac129 2CY17 2CY18 2CY19 2CY20 2CY21 240MWF
Abstract: 30MN 30MN IMA RL A IMA IMA 100MA 100MA ALA ALA ALG ALG TIB TIB TIB TI8 TIB 0C44N AC126 AC126 , OBS OBS OBS OBS AC125 AC125 AC176 2N406 2N406 2N2430 USE MFR ALG OBS A LG ALG PCT PCT OBS OBS , ALG OBS OBS OBS OBS OBS AC176 ACY17 AC125 AC125 AC125 2N2430 2N1176 2N406 2N406 2N406 15 M A 8MA , OBS OBS OBS AC125 AC125 AC125 AC125 A C 128 2N406 2N406 2N406 2N406 2N2706 300MA 300MA 50MA 50MA , 150MWF 150MWF AC12B AC12B ACY17 AC125 AC120 2N2706 2N2706 2N1176 2N406 2N2706 15 M A 20MA 20MA 20MA -
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y51 h 120c BFQ59 bd192 Silec Semiconductors MM1711 2SD325 100MWF 300MWF 2G306 2G308 2G309 2G319
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