2N5551 datasheet and Application Note, Data Sheet, Circuit, PDF, Pinout

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

United States

Featured Products & Offers	More Featured Products

Check Stock and Availability

					171 Distributors Check Price & Availability
					171 Distributors Check Price & Availability

2N5551 Datasheet, Circuit, PDF, & Application Note Results

Datasheet Search Results			1 - 50 of about 76 for 2N5551
	2N5551	AUK Corp.	NPN Silicon Transistor (General purpose amplifier High voltage application)	196.54 Kb, 3 Pages.	Buy Now!

	2N5551	Avic Electronics Corp.	NPN General Purpose Amplifier	20.62 Kb, 1 Pages.	Buy Now!

	2N5551	Boca Semiconductor	NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR	54.56 Kb, 2 Pages.	Buy Now!

	2N5551	Central Semiconductor	Small Signal Transistors TO-92 Case (Continued)	57.81 Kb, 1 Pages.	Buy Now!

	2N5551	Continental Device India Limited	Semiconductor Device Data Book 1996	101.15 Kb, 1 Pages.	Buy Now!

	2N5551	Crimson Semiconductor	Transistor Selection Guide	1453.37 Kb, 36 Pages.	Buy Now!

	2N5551	Fairchild Semiconductor	NPN General Purpose Amplifier	67.89 Kb, 5 Pages.	Buy Now!

	2N5551	Fairchild Semiconductor	NPN General Purpose Amplifier	465.34 Kb, 12 Pages.	Buy Now!

	2N5551	Fairchild Semiconductor	NPN General Purpose Amplifier	496.66 Kb, 12 Pages.	Buy Now!

	2N5551	Fairchild Semiconductor	NPN General Purpose Amplifier	109.73 Kb, 4 Pages.	Buy Now!

	2N5551	Honey Technology	160 V, NPN silicon expitaxial planar transistor	129.8 Kb, 2 Pages.	Buy Now!

	2N5551	Korea Electronics	EPITAXIAL PLANAR NPN TRANSISTOR	141.56 Kb, 2 Pages.	Buy Now!

	2N5551	Korea Electronics	V(ceo): 160V I(c): 600mA P(c): 625mW NPN Silicon Transistor	495.64 Kb, 5 Pages.	Buy Now!

	2N5551	Korea Electronics	High Voltage Transistor	153.66 Kb, 2 Pages.	Buy Now!

	2N5551	Korea Electronics	TRANS GP BJT NPN 160V 0.6A 3TO-92	64.39 Kb, 2 Pages.	Buy Now!

	2N5551	Micro Commercial Components	TRANS GP BJT NPN 160V 0.6A 3TO-92	350.57 Kb, 2 Pages.	Buy Now!

	2N5551	Micro Electronics	High Voltage Transistors	102.75 Kb, 1 Pages.	Buy Now!

	2N5551	Micro Electronics	Semiconductor Device Data Book	55.26 Kb, 1 Pages.	Buy Now!

	2N5551	Micro Electronics	Semiconductor Devices	49.59 Kb, 1 Pages.	Buy Now!

	2N5551	Micro Electronics	SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS	165.68 Kb, 2 Pages.	Buy Now!

	2N5551	Motorola	The European Selection Data Book 1976	67.85 Kb, 2 Pages.	Buy Now!

	2N5551	Motorola	European Master Selection Guide 1986	51.87 Kb, 1 Pages.	Buy Now!

	2N5551	National Semiconductor	High Voltage Amplifier	67.3 Kb, 1 Pages.	Buy Now!

	2N5551	National Semiconductor	NPN General Purpose Amplifier	124.12 Kb, 4 Pages.	Buy Now!

	2N5551	On Semiconductor	Amplifier Transistors NPN	68.39 Kb, 8 Pages.	Buy Now!

	2N5551	On Semiconductor	mplifier Transistors(NPN Silicon)	187.24 Kb, 6 Pages.	Buy Now!

	2N5551	Philips Semiconductors / NXP Semiconductors	Small-signal Transistors	4.29 Kb, 1 Pages.	Buy Now!

	2N5551	Philips Semiconductors / NXP Semiconductors	NPN High-Voltage Transistor	56.51 Kb, 3 Pages.	Buy Now!

	2N5551	Philips Semiconductors / NXP Semiconductors	NPN High-Voltage Transistor	47.04 Kb, 8 Pages.	Buy Now!

	2N5551	ROHM Electronics	General Purpose Bipolar Transistor, NPN, 160V, TO-92, 3-Pin	80.59 Kb, 2 Pages.	Buy Now!

	2N5551	Semiconductors, Inc.	High Voltage Transistors	282.75 Kb, 4 Pages.	Buy Now!

	2N5551	Semtech	NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications	129.81 Kb, 2 Pages.	Buy Now!

	2N5551	Siemens Semiconductors	Cross Reference Guide 1998	26.71 Kb, 7 Pages.	Buy Now!

	2N5551	Sinyork Co., Ltd.	Mini size of Discrete semiconductor elements	494.27 Kb, 15 Pages.	Buy Now!

	2N5551	Sprague	Semiconductor Data Book 1977	68.23 Kb, 1 Pages.	Buy Now!

	2N5551	Sprague	Small Signal TO-92 Plastic Transistors	370.91 Kb, 5 Pages.	Buy Now!

	2N5551	Taitron Components	Small Signal High Voltage Transistor (NPN)	151.88 Kb, 4 Pages.	Buy Now!

	2N5551	Thomson-CSF	Shortform Semiconductor Catalogue 1982	229.31 Kb, 2 Pages.	Buy Now!

	2N5551	Thomson-CSF	Condensed Data Book 1977	38.05 Kb, 1 Pages.	Buy Now!

	2N5551	Usha Ltd.	Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW.	74.8 Kb, 2 Pages.	Buy Now!

	2N5551	Various Russian Datasheets	Transistor	82.42 Kb, 8 Pages.	Buy Now!

	2N5551	Weitron Technology	NPN Transistors	159.68 Kb, 4 Pages.	Buy Now!

	2N5551	Zetex Semiconductors	Quick Reference Guide (Discrete Semiconductors) 1991	51.98 Kb, 1 Pages.	Buy Now!

	2N5551BU	Fairchild Semiconductor	NPN General Purpose Amplifier	67.89 Kb, 5 Pages.	Buy Now!

	2N5551C	Korea Electronics	High Voltage Transistor	175.44 Kb, 2 Pages.	Buy Now!

	2N5551C	Korea Electronics	EPITAXIAL PLANAR NPN TRANSISTOR	160.2 Kb, 2 Pages.	Buy Now!

	2N5551C	Korea Electronics	TRANS GP BJT NPN 160V 0.6A 3TO-92	64.01 Kb, 2 Pages.	Buy Now!

	2N5551CBU	Fairchild Semiconductor	NPN General Purpose Amplifier	67.89 Kb, 5 Pages.	Buy Now!

	2N5551CN	AUK Corp.	NPN Silicon Transistor	247.4 Kb, 4 Pages.	Buy Now!

	2N5551CSM	Semelab	Bipolar NPN Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications	10.08 Kb, 1 Pages.	Buy Now!

	Datasheets per page: 50 \| 250 \| 500

Contextual Datasheet Results		1 - 50 of about 136 for 2N5551
	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors. for general purpose, high voltage amplifier. applications. As complementary types the PNP transistors. ST 2N5400 and ST 2N5401 are .. datasheet abstract..	229.35 Kb	3 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors. for general purpose, high voltage amplifier. applications. As complementary types the PNP transistors. ST 2N5400 and ST 2N5401 are .. datasheet abstract..	223.8 Kb	3 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are .. datasheet abstract..	235.14 Kb	2 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are .. datasheet abstract..	217.02 Kb	2 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are .. datasheet abstract..	184.49 Kb	2 Pages

	First line: 2N5550 2N5551 2N5550 2N5551 Version 2006-06-17 Power dissipation Verlustleistung General Purpose Si-Epitaxial Abstract: .. 2N5550 / 2N5551 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN Version 2006-06-17 Dimensions - Maße [mm] Power .. datasheet abstract..	102.38 Kb	2 Pages

	First line: PROCESS CP316V Small Signal Transistors High Voltage Transistor Chip PROCESS DETAILS Process Abstract: .. PRINCIPAL DEVICE TYPES CMPT5551 CXT5551 CZT5551 2N5551. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 4.0 x 4.0 MILS. Emitter Bonding Pad Area 4.7 x 4.7 .. datasheet abstract..	229.65 Kb	2 Pages

	First line: PROCESS CP316V Small Signal Transistors High Voltage Transistor Chip PROCESS DETAILS Process Abstract: .. PRINCIPAL DEVICE TYPES CMPT5551 CXT5551 CZT5551 2N5551. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 4.0 x 4.0 MILS. Emitter Bonding Pad Area 4.7 x 4.7 .. datasheet abstract..	189.12 Kb	2 Pages

	First line: 2N5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage VCEO= 160V Collector Dissipation max =625mW EPITAXIAL SILICON Abstract: .. 2N5551 NPN EPITAXIAL SILICON TRANSISTOR. AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 160V • Collector Dissipation: PC max =625mW. ABSOLUTE MAXIMUM RATINGS TA=25 ELECTRICAL .. datasheet abstract..	51.75 Kb	3 Pages

	First line: Semiconductort Amplifier Transistors Silicon 2N5550 2N5551 Semiconductor Preferred Device MAXIMUM RATINGS Rating Abstract: .. Amplifier Transistors NPN Silicon. MAXIMUM RATINGS. Rating Symbol 2N5550 2N5551 Unit. Collector‐Emitter Voltage VCEO 140 160 Vdc. Collector‐Base Voltage VCBO 160 180 Vdc. Emitter‐Base Voltage .. datasheet abstract..	68.38 Kb	8 Pages

	First line: Semiconductor 2N5551 Silicon Transistor Descriptions General purpose amplifier High voltage application Features Abstract: .. 2N5551 NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector .. datasheet abstract..	196.55 Kb	3 Pages

	First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 2N5550 2N5551 high-voltage transistors Product Abstract: .. 2N5550; 2N5551 NPN high-voltage transistors book, halfpage M3D186 2004 Oct 28 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES .. datasheet abstract..	47.42 Kb	7 Pages

	First line: PROCESS Small Signal Transistor High Voltage Transistor Chip CP316 Central Semiconductor Corp. Abstract: .. PRINCIPAL DEVICE TYPES CMPT5551 CXT5551 CZT5551 2N5551. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 4.0 x 4.0 MILS. Emitter Bonding Pad Area 4.7 x 4.7 .. datasheet abstract..	207.7 Kb	2 Pages

	First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 2N5550 2N5551 high-voltage transistors Product Abstract: .. 2N5550; 2N5551 NPN high-voltage transistors book, halfpage M3D186 1999 Apr 23 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES .. datasheet abstract..	47.04 Kb	8 Pages

	First line: 2N5551- MMBT5551 General Purpose Amplifier April 2N5551- MMBT5551 General Purpose Amplifier Features Abstract: .. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com. 2N5551- MMBT5551 Rev. B. 2N5551- MMBT5551 NPN General Purpose Amplifier. tm. April 2006. 2N5551- MMBT5551 NPN General Purpose .. datasheet abstract..	155.03 Kb	5 Pages

	First line: Philips Semiconductors Small-signal Transistors LEADED DEVICES continued HIGH-VOLTAGE LOW-POWER TRANSISTORS TYPE NUMBER Abstract: .. 2N5551 TO-92 160 300 630 80 >80 100 2N5401 184. BF420L TO-92 300 50 625 50 >50 60 BF421L 536. BF422L TO-92 250 50 625 50 >50 60 BF423L 536. MPSA42 TO-92 300 100 500 40 >40 50 MPSA92 822. MPSA43 TO-92 200 100 500 .. datasheet abstract..	4.27 Kb	1 Pages

	First line: 2N5551 Transistors TO-92 EMITTER BASE COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25 Rating Collector-Emitter Abstract: .. 2N5551. WEITRON http://www.weitron.com.tw. IC=1.0 mAdc, VCE=5.0 Vdc DC Current Gain DC Current Gain. IC=10 mAdc, VCE= 5.0 Vdc 80 - 1 2 hFE 3 80. 0.5. 1.0. - Classification of hFE 1 Rank .. datasheet abstract..	159.67 Kb	4 Pages

	First line: 2N5550 2N5551 Preferred Device Amplifier Transistors Silicon Features Pb-Free Packages Available Abstract: .. 2N5550, 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5550 2N5551 .. datasheet abstract..	81.19 Kb	6 Pages

	First line: Small Signal High Voltage Transistor NPN 2N5551 Small Signal High Voltage Transistor Abstract: .. Rev. A/AH 2007-11-09. 2N5551. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com. Page 1 of 4 Tel: 800 -TAITRON 800 -824-8766 661 -257-6060 Fax: 800 -TAITFA 800 -824-8329 .. datasheet abstract..	151.89 Kb	4 Pages

	First line: 2N5550 2N5551 Preferred Device Amplifier Transistors Silicon Features These Pb-Free Devices Abstract: .. 2N5550, 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. • These are Pb Free Devices* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5550 2N5551 .. datasheet abstract..	85.09 Kb	6 Pages

	First line: 2N5550 2N5551 Preferred Device Amplifier Transistors Silicon Features Pb-Free Packages Available Abstract: .. 2N5550, 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. ∞ Pb-Free Packages are Available* ∞ Device Marking: Device Type, e.g., 2N5550, Date Code. MAXIMUM RATINGS. Rating .. datasheet abstract..	71.6 Kb	6 Pages

	First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 2N5550 2N5551 high-voltage transistors Product Abstract: .. 2N5550; 2N5551 NPN high-voltage transistors book, halfpage M3D186 1997 Apr 09 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES .. datasheet abstract..	66.35 Kb	8 Pages

	First line: UNISONIC TECHNOLOGIES 2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES High collector-emitter voltage VCEO=160V Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2N5551 NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 4. Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-002.B. HIGH VOLTAGE SWITCHING TRANSISTOR. FEATURES .. datasheet abstract..	49.73 Kb	4 Pages

	First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N5550 / D Amplifier Transistors Silicon 2N5550 Abstract: .. Rating Symbol 2N5550 2N5551 Unit. Collector ‐ Emitter Voltage VCEO 140 160 Vdc. Collector ‐ Base Voltage VCBO 160 180 Vdc. Emitter ‐ Base Voltage VEBO 6.0 Vdc. Collector Current — Continuous IC 600 mAdc .. datasheet abstract..	187.24 Kb	6 Pages

	First line: MOSDESIGN SEMICONDUCTOR CORP. CONTROLE M5003 LAMP DRIVER GENERAL DESCRIPTION M5003 CMOS chip Abstract: .. 2N5551 2N5551 EL CHOP CK TGB VSS S1 S2 CKX CHOPX OSC ON TG VDD VDD=3V M5003底 .. 2N5551 2N5551 EL CHOP CK TGB VSS S1 S2 CKX CHOPX OSC VDD=3V M5003底底底底=VDD .. datasheet abstract..	107.58 Kb	4 Pages

	First line: Features omponents Marilla Street Chatsworth 2N5551 This device designed general purpose high Abstract: .. 2N5551. NPN General Purpose Amplifier Transistor. Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Maximum Ratings Symbol Rating .. datasheet abstract..	350.57 Kb	2 Pages

	First line: 2N5551 MMBT5551 Discrete POWER Signal Technologies 2N5551 MMBT5551 TO-92 SOT-23 Mark General Abstract: .. 2N5551 MMBT5551. NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum .. datasheet abstract..	109.73 Kb	4 Pages

	First line: 2N5551 2N5551 MMBT5551 Discrete POWER Signal Technologies MMBT5551 TO-92 SOT-23 Mark General Abstract: .. N 2N5551 MMBT5551. NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum .. datasheet abstract..	65.12 Kb	4 Pages

	First line: 2N5551 MMBT5551 2N5551 Discrete POWER Signal Technologies MMBT5551 TO-92 SOT-23 Mark General Abstract: .. 2N5551 MMBT5551. NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum .. datasheet abstract..	117.31 Kb	4 Pages

	First line: 2N5551 MMBT5551 2N5551 MMBT5551 TO-92 SOT-23 Mark General Purpose Amplifier This device Abstract: .. 2N5551 MMBT5551. NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* TA = 25°C unless .. datasheet abstract..	67.89 Kb	5 Pages

	First line: 2N5551 Elektronische Bauelemente RoHS Compliant Product suffix specifies halogen lead-free Silicon General Abstract: .. Elektronische Bauelemente. 2N5551 NPN Silicon. General Purpose Transistor. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual. 4.55±0.2 3.5±0.2. 4.5 ± .. datasheet abstract..	199.9 Kb	2 Pages

	First line: 2N5551 EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES High Collector-Emitter Voltage Abstract: .. UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-002,A HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V .. datasheet abstract..	43.04 Kb	2 Pages

	First line: 2N5551 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation Tamb=25 Collector current Collector-base Abstract: .. TO-92 Plastic-Encapsulate Transistors Transistor NPN 2N5551. FEATURES. Power dissipation P :0.625 W Tamb=25 C Collector current I :0.6 A. Collector-base voltage V :180 V. Operating and storage .. datasheet abstract..	141.69 Kb	2 Pages

	First line: SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. 2N5551 EPITAXIAL PLANAR Abstract: .. 2N5551. * Pulse Test : Pulse Width# 300 Ã S, Duty Cycle# 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO. VCB=120V, IE=0 - - 50 nA. VCB=120V, IE=0, Ta=100 .. datasheet abstract..	64.39 Kb	2 Pages

	First line: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY TO-92 Plastic-Encapsulate Transistors 2N5551 FEATURES Power dissipation Tamb=25 Abstract: .. 2N5551 TRANSISTOR NPN FEATURES Power dissipation PCM : 0.625 W Tamb=25°C .. datasheet abstract..	37.86 Kb	2 Pages

	First line: General Purpose Amplifier FEATURES High Collector Breakdown Voltage Noise Complementary 2N5401 Abstract: .. @vic 2N5551. NPN General Purpose Amplifier. FEATURES & USE. ★ High Collector Breakdown Voltage; Low Noise; ★ Complementary to 2N5401 ★ This device is designed as a general purpose amplifier and .. datasheet abstract..	20.63 Kb	1 Pages

	First line: Transys Electronics TO-92 Plastic-Encapsulated Transistors 2N5551 FEATURES Power dissipation Tamb=25 EMITTER TRANSISTOR Abstract: .. TO-92 Plastic-Encapsulated Transistors 2N5551 TRANSISTOR NPN FEATURES Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: 0.6 A Collector-base voltage V BR CBO .. datasheet abstract..	62.9 Kb	2 Pages

	First line: COMPONENTS LTD. 2N5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS EPITAXIAL PLANAR TRANSISTOR Description Designed Abstract: .. 2N5551. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF NPN .. datasheet abstract..	207.36 Kb	1 Pages

	First line: 2N5830 Discrete POWER Signal Technologies 2N5830 TO-92 General Purpose Amplifier This device Abstract: .. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may .. datasheet abstract..*	22.71 Kb	2 Pages

	First line: CMLT5554 SURFACE MOUNT PICOmini DUALCOMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS Central Semiconductor Corp. Abstract: .. DESCRIPTION: The Central Semiconductor CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the .. datasheet abstract..	88.41 Kb	2 Pages

	First line: MPSL01 Discrete POWER Signal Technologies MPSL01 TO-92 General Purpose Amplifier This device Abstract: .. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may .. datasheet abstract..*	22.69 Kb	2 Pages

	First line: Philips Semiconductors Small-signal Transistors Diodes PHILIPS TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER Abstract: .. 2N5551 2N5551 2N5551 2N5551 2N6426 MPSA14 2N6426 MPSA14 2N6427 MPSA14 2N6517 MPSA44 .. datasheet abstract..	239.78 Kb	9 Pages

	First line: Semiconductor 2N5401 Silicon Transistor Description General purpose amplifier High voltage application Features Abstract: .. collector saturation voltage : VCE sat =-0.5V MAX. • Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 2N5401 TO-92 Outline Dimensions unit : mm .. datasheet abstract..	198.97 Kb	3 Pages

	First line: 2N4410 Discrete POWER Signal Technologies 2N4410 TO-92 General Purpose Amplifier This device Abstract: .. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may .. datasheet abstract..*	23.74 Kb	2 Pages

	First line: 2N5551 MMBT5551 2N5551 MMBT5551 TO-92 SOT-23 Mark General Purpose Amplifier This device Abstract: .. 2N5551 MMBT5551. NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* TA = 25°C unless .. datasheet abstract..	470.34 Kb	12 Pages

	First line: 2N5551 MMBT5551 2N5551 MMBT5551 TO-92 SOT-23 Mark General Purpose Amplifier This device Abstract: .. 2N5551 MMBT5551. NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum .. datasheet abstract..	496.66 Kb	12 Pages

	First line: 2N5551 MMBT5551 2N5551 MMBT5551 TO-92 SOT-23 Mark General Purpose Amplifier This device Abstract: .. 2N5551 MMBT5551. NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* TA = 25°C unless .. datasheet abstract..	465.35 Kb	12 Pages

	First line: 2N5400 2N5401 2N5400 2N5401 Version 2006-06-17 Power dissipation Verlustleistung General Purpose Si-Epitaxial Abstract: .. 2N5550 / 2N5551 2 Tested with pulses tp = 300 μs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 μs, Schaltverhältnis ≤ 2% 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from .. datasheet abstract..	102.95 Kb	2 Pages

	First line: 2N5551CSM MECHANICAL DATA Dimensions inches HIGH VOLTAGE SWITCHING TRANSISTOR HERMETICALLY SEALED CERAMIC Abstract: .. Hermetically sealed surface mount 2N5551 for high reliability / space applications requiring small size and low weight devices. VCBO Collector – Base Voltage. VCEO Collector – Emitter Voltage .. datasheet abstract..	25.64 Kb	2 Pages

	First line: 2N5550 AMPLIFIER TRANSISTOR Collector-Emitter Voltage VCEO= 140V Collector Dissipation max =625mW EPITAXIAL SILICON Abstract: .. • Refer to 2N5551 for graphs. ELECTRICAL CHARACTERISTICS TA=25° °C * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Characteristic Symbol Rating Unit. Collector-Base Voltage Collector-Emitter .. datasheet abstract..	27.13 Kb	2 Pages

	Datasheets per page: 50 \| 250 \| 500

Specsheet Results
	2N5551	N/A	Silicon NPN	Specification

	2N5551	N/A	RME	Specification

	2N5551/D75Z	Fairchild Semiconductor	Si NPN Lo-Pwr BJT	Specification

	2N5551LT1	N/A	NPN Transistor	Specification

	2N5551T/R	Philips Semiconductors / NXP Semiconductors	Si NPN Lo-Pwr BJT	Specification

Cross References
	2N5551	Cross References (83)

Search Help

View our Search Example to help improve your search results.

Manufacturers

Browse datasheets from 7500 manufacturers.

AUK

Avic Electronics

Boca Semiconductor

Central Semiconductor

Continental Device India

Crimson Semiconductor

Fairchild Semiconductor

Honey Technology

Korea Electronics

Micro Commercial Components

Micro Electronics

Motorola

National Semiconductor

On Semiconductor

Philips Semiconductors OR NXP Semiconductors

ROHM Electronics

Semelab

Semiconductors

Semtech

Siemens Semiconductors

Sinyork

Sprague

Taitron Components

Thomson-CSF

Usha

Various Russian Datasheets

Weitron Technology

Zetex Semiconductors

Manufacturer Directory

Parts Directory

Part number starts with:

0	1	2	3	4
5	6	7	8	9
A	B	C	D	E
F	G	H	I	J
K	L	M	N	O
P	Q	R	S	T
U	V	W	X	Y
Z

Technology Zones

Browse datasheets by category.

Technology Zones

Data Book Scanning Project

Datasheet Data Sheet

We have scanned over 1 million electronic component datasheets from 2500 data books. This data on obsolete parts is ONLY available on the Datasheet Archive.

Data Books

Datasheet Indexer

Our unique and powerful new search allows full text searching of around 100 million parts.

Datasheet Index