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2N5551 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN visit Digikey Buy
2N5551 TIN/LEAD Central Semiconductor Corp TRANS NPN 160V 0.6A TO-92 visit Digikey Buy
CP336V-2N5551-CT20 Central Semiconductor Corp TRANS NPN 1=20PCS visit Digikey Buy
CP336V-2N5551-CT Central Semiconductor Corp Power Bipolar Transistor visit Digikey Buy

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Part : 2N5551 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2889 Price Each : $0.3149
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2N5551 Datasheet

Part Manufacturer Description PDF Type
2N5551 AUK NPN Silicon Transistor (General purpose amplifier High voltage application) Original
2N5551 Avic Electronics NPN General Purpose Amplifier Original
2N5551 Boca Semiconductor NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR Original
2N5551 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original
2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original
2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original
2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original
2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original
2N5551 Kexin NPN Transistors Original
2N5551 Korea Electronics TRANS GP BJT NPN 160V 0.6A 3TO-92 Original
2N5551 Micro Commercial Components TRANS GP BJT NPN 160V 0.6A 3TO-92 Original
2N5551 On Semiconductor mplifier Transistors(NPN Silicon) Original
2N5551 On Semiconductor Amplifier Transistors NPN Original
2N5551 Philips Semiconductors NPN High-Voltage Transistor Original
2N5551 Philips Semiconductors Small-signal Transistors Original
2N5551 ROHM General Purpose Bipolar Transistor, NPN, 160V, TO-92, 3-Pin Original
2N5551 Siemens Cross Reference Guide 1998 Original
2N5551 Sinyork Mini size of Discrete semiconductor elements Original
2N5551 Taitron Components Small Signal High Voltage Transistor (NPN) Original
2N5551 TY Semiconductor NPN Transistors - TO-92 Original
Showing first 20 results.

2N5551

Catalog Datasheet MFG & Type PDF Document Tags

2n5551

Abstract: 2N55551 2N5550, 2N5551 ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM 2N5551RLRP 2N55551ZL1 Package TO-92 TO-92 TO-92 TO-92 (Pb-Free) TO-92 TO , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Symbol VCEO VCBO VEBO IC PD 2N5550 2N5551 140 160 6.0 600 625 5.0 1.5 12 - 55 to +150 160 180 Unit Vdc , June, 2004 - Rev. 3 109 Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL
ON Semiconductor
Original
2N55551 2N5551 circuit 1N914

2N5551

Abstract: 2N5550 ) 5000 Units / Bulk 2N5551RL1G TO-92 (Pb-Free) 2N5551RLRAG TO-92 (Pb-Free) 2N5551RLRPG , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · These are , Value VCEO Vdc 140 160 2N5550 2N5551 Collector - Base Voltage VCBO 1 EMITTER Vdc 160 180 2N5550 2N5551 Emitter - Base Voltage 2 BASE Unit VEBO 6.0 Vdc , future use and best overall value. 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless
ON Semiconductor
Original
2N5550G 2N55551ZL1G 2N5551 TO92 to-92 marking 2n5550 BRD8011/D

2N5551

Abstract: 2N55551 ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551RL1 2N5551RLRA 2N5551RLRM 2N5551RLRP 2N55551ZL1 Package TO-92 TO-92 TO-92 TO-92 (Pb-Free) TO-92 TO-92 TO-92 TO-92 TO-92 TO , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Watts mW/°C °C 12 3 mW mW/°C TO-92 CASE 29 STYLE 1 2N5550 2N5551 140 160 6.0 600 160 180 Unit Vdc Vdc , May, 2004 - Rev. 2 Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL
ON Semiconductor
Original
ALL 2N5551 2N555

2n5551

Abstract: 2N5551 SOT23 Package Top Mark Packing Method 2N5551TA 5551 TO-92 3L Ammo 2N5551TFR 5551 TO-92 3L Tape and Reel 2N5551TF 5551 TO-92 3L Tape and Reel 2N5551BU 5551 TO-92 3L , 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO , Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix â'-Yâ' means hFE 180~240 in 2N5551 (Test
Fairchild Semiconductor
Original
2N5551 SOT23

2N5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO , / 2N5551 Characteristics at Tamb = 25 OC Parameter at VCE = 5 V, IC = 50 mA Min. Max. Unit , ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO at VCE = 5 V, IC = 10 mA Symbol ST 2N5550 V(BR)CEO
Semtech Electronics
Original
2N5400 2N5401 transistor equivalent 2n5551 st 2n5551 OF 2n5550 st2n5551 hz15 transistor 2n5550

2N55551

Abstract: 2N5551 ) 5,000 Unit / Bulk 2N5551RL1 TO-92 2,000 Tape & Reel 2N5551RLRA TO-92 2,000 Tape & Reel 2N5551RLRM TO-92 2,000 Tape & Ammo Box 2N5551RLRP TO-92 2,000 Tape & Ammo Box 2N55551ZL1 TO-92 2,000 Tape & Ammo Box Device 2N5550RLRPG 2N5551 2N5551G For information on , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector - Emitter
ON Semiconductor
Original
2N5551 DATA ALL+2N5551

2N5551 circuit

Abstract: transistor equivalent 2n5551 TO-92 2N5551RL1G TO-92 (Pb-Free) 2N5551RLRA TO-92 2N5551RLRAG 2N5551RLRM 2N5551RLRMG 2N5551RLRP 2N5551RLRPG 2N55551ZL1 2N55551ZL1G 2000 / Tape & Reel TO-92 (Pb-Free) TO , 2N5550G 2N5550RLRA 2N5550RLRAG 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 Package , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Collector - Emitter Voltage Value Unit VCEO 2N5550 2N5551 Collector - Base Voltage 140 160
ON Semiconductor
Original
C2N5550

2n5551

Abstract: 2n5550 package. PNP complements: 2N5400 and 2N5401. PINNING PIN 1 2 3 collector base emitter 2N5550; 2N5551 , REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage 2N5550 2N5551 VCEO CONDITIONS open emitter , collector-emitter voltage 2N5550 2N5551 peak collector current total power dissipation DC current gain ·c m mA mW Ptc hFE 60 80 lc = 10 mA; VC E= 5 V 2N5550 2N5551 Co collector capacitance , 2N5550; 2N5551 PARAMETER collector-base voltage 2N5550 2N5551 collector-emitter voltage 2N5550 2N5551
-
OCR Scan
transistor 2n5551 AM279

2N5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST 2N5551 VCBO 180 V VEBO 6 V Collector Current IC 600 mA Power Dissipation , ST 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol Unit hFE hFE hFE hFE hFE hFE , 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min
Semtech Electronics
Original
ic CD4081 pin diagram datasheet 100MH

2N5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO , / 2N5551 Characteristics at Tamb = 25 OC Parameter at VCE = 5 V, IC = 50 mA Min. Max. Unit , ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO at VCE = 5 V, IC = 10 mA Symbol ST 2N5550 V(BR)CEO
Semtech Electronics
Original
2n5551 datasheet equivalent 2n5551 st2n5401

2N5551B

Abstract: tr 5551 Product 2N5551BU 2N5551CBU 2N5551CTA 2N5551TA 2N5551TAR 2N5551TF 2N5551TFR 2N5551_J05Z 2N5551_J18Z 2N5551_J61Z , (Asm. Plant Code) &3 (3-Digit Date Code) Line 2: 2N Line 3: 5551 2N5551_J05Z Full Production N/A TO-92 3 BULK 2N5551_J18Z Full Production N/A TO-92 3 BULK 2N5551_J61Z , 2N5551- MMBT5551 NPN General Purpose Amplifier April 2006 2N5551- MMBT5551 NPN General , www.fairchildsemi.com 2N5551- MMBT5551 Rev. B 2N5551- MMBT5551 NPN General Purpose Amplifier Electrical
Fairchild Semiconductor
Original
2N5551B tr 5551 BR 5551 BR N 5551

2N5551

Abstract: 2N5551 circuit Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector ­ Emitter Voltage , ) Collector ­ Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter ­ Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 , = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current
Motorola
Original
motorola 1N914 diode datasheet 2N5551 motorola 2N5551 diodes inc 226AA

2N5551 circuit

Abstract: 2N5550 ON Semiconductort Amplifier Transistors NPN Silicon 2N5550 2N5551* *ON Semiconductor , VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5550 140 160 6.0 600 625 5.0 1.5 12 ­55 to +150 2N5551 160 180 Unit , %. 2N5550 2N5551 2N5550 2N5551 IEBO V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO - - - - , 2N5550 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat
ON Semiconductor
Original

2N5551 SOT23

Abstract: 2N5551 circuit 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features · This device is designed for , Fairchild Semiconductor Corporation 2N5551- MMBT5551 Rev. B 1 www.fairchildsemi.com 2N5551- , =50m Vtf=5 Xtf=8 Rb=10) 2 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551 NPN , (V) 3 2N5551- MMBT5551 Rev. B C cb www.fairchildsemi.com 2N5551- MMBT5551 NPN General , TEMPERATURE ( o C) 125 150 4 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551
Fairchild Semiconductor
Original
2N5551 fairchild

2N5551

Abstract: TOâ'92 (Pbâ'Free) 5000 Units / Bulk 2N5551RL1G TOâ'92 (Pbâ'Free) 2N5551RLRAG TOâ , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features â'¢ These are , ' Emitter Voltage Value VCEO 2N5550 2N5551 Collector â' Base Voltage Vdc 140 160 1 EMITTER VCBO Vdc 160 180 2N5550 2N5551 Emitter â' Base Voltage 2 BASE Unit VEBO , : 2N5550/D 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
ON Semiconductor
Original

2N5551 diodes inc

Abstract: 2N5551 circuit Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector ­ Emitter Voltage , ) Collector ­ Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter ­ Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 , = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current
Motorola
Original
diodes inc 2N5551 2N5550 motorola

C2N5550

Abstract: 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST 2N5551 VCBO 180 V VEBO 6 V Collector Current IC 600 mA Power Dissipation , A IS AVAILABLE mW C C 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol DC Current , hFE hFE hFE hFE hFE 60 80 60 80 20 30 - 250 250 - - ST 2N5550 ST 2N5551
Bytes
Original

2N5551

Abstract: Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 , V - 140 V open base 2N5551 V ebo UNIT - 2N 5550 e m itter-base voltage MAX. open e m itte r 2N5551 V cE O MIN. - c olle cto r current (DC) 160 V - , ; 2N5551 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 200 K/W therm , qb = 100 V nA c o lle cto r cut-off current 2N5551 Ie = 0; V qb = 120 V |iA - 50
-
OCR Scan
SC-43

2N5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST 2N5551 VCBO 180 V VEBO 6 V Collector Current IC 600 mA Power Dissipation , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 29/04/2004 ST 2N5550 / 2N5551 , . ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min. 6 - - V ST 2N5550
Semtech Electronics
Original

2n5551

Abstract: 2N5550 ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Unit ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST 2N5551 VCBO 180 V VEBO 6 V Collector Current IC 600 mA Power , /04/2004 ST 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol Unit hFE hFE hFE hFE , =50mA Max. ST 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE
Semtech Electronics
Original

2N5551 diodes inc

Abstract: 2n5551 2N5550 140 160 2N5551 160 180 Unit Vdc Vdc Vdc mAdc mW m W /°C W atts m W /°C °C 6.0 600 625 , -© M otorola, Inc. 1996 fM ) M O T O R O L A x_- 2N5550 2N5551 ELECTRICAL CHARACTERISTICS , Transistors, FETs and Diodes Device Data 2N5550 2N5551 h FE, D C CURRENT GAIN lC, COLLECTOR CURRENT , 2N5550 2N5551 VßE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut-Off Region V , VOLTAGE , Motorola S m all-S ignal Transistors, FETs and Diodes Device Data 2N5550 2N5551 t, TIM E (ns) 0.2
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OCR Scan

2H5551

Abstract: 2Ns551 M AXIM UM RATINGS Rating Sym bol 2N5550 2N5551* 2N5550 140 160 6.0 600 625 5.0 1.5 12 - 55 to + 150 2N5551 160 180 U n it Collector-Emitter Voltage Collector-Base Voltage Emitter-Base , , iE = 0) 0) o, t a = ioo°ci o, t a = ioo°c) v (BR)CEO 2N5550 2N5551 v (BR)CBO 2N5550 2N5551 V(BR)EBO >CBO 2N5550 2N5551 2N5550 2N5551 - - Vdc 140 160 160 180 6.0 Vdc - - - Vdc - , CHARACTERISTICS« 1) Iebo - DC Current Gain ÜC = 1-0 mAdc, V CE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550
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OCR Scan
2H5551 2Ns551

2n5551

Abstract: 2N5550 issipation Derate above 2 5 X (a 2N5550 2N5551* Sym bol VCEO v CBO v EBO 'c Pd Pd TJ ' T stg 2N5550 140 160 6.0 600 625 5.0 1.5 12 - 55 to +150 2N5551 160 180 U n it Vdc Vdc Vdc m Adc mW mWX W att mWX X , a = 100D Cl 0. T a = 100X1 2N5550 2N5551 2N5550 2N5551 lEBO v (BRICEO 2N5550 2N5551 v IBR|CBO 2N5550 2N5551 v (BR)EBO 'CBO - - - | S ym b o l I M in [ M ax I U n it Vdc 140 , Adc, V çg = 5.0 Vdc) h FE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 v CE(sat) Both Types 2N5550
-
OCR Scan

transistor 2N 5551

Abstract: 5551 transistor /2N5550 HN/2N5551 ^(br)cbo (br)cbo 160 180 - V V Emitter Base Breakdown Voltage at lE = 10 ^A ^(br)ebo 6
-
OCR Scan
transistor 2N 5551 5551 transistor 5551 transistor 5551 BR 5550 2n 5551 transistor HN/2N5550 HN/2N5551
Showing first 20 results.