2N5551 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results | 1 - 50 of about 90 for 2N5551 | ||||
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2N5551 | AUK Corp. | NPN Silicon Transistor (General purpose amplifier High voltage application) | 196.54 Kb, 3 Pages. |  |
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2N5551 | Avic Electronics Corp. | NPN General Purpose Amplifier | 20.62 Kb, 1 Pages. | |
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2N5551 | Boca Semiconductor | NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR | 54.56 Kb, 2 Pages. | |
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2N5551 | Central Semiconductor | Small Signal Transistors TO-92 Case (Continued) | 57.81 Kb, 1 Pages. | |
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2N5551 | Continental Device India Limited | Semiconductor Device Data Book 1996 | 101.15 Kb, 1 Pages. | |
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2N5551 | Crimson Semiconductor | Transistor Selection Guide | 1453.37 Kb, 36 Pages. | |
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2N5551 | Diodes, Inc. | Lead Mounted Transistors | 64.26 Kb, 1 Pages. | |
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2N5551 | Fairchild Semiconductor | NPN General Purpose Amplifier | 109.73 Kb, 4 Pages. | |
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2N5551 | Fairchild Semiconductor | NPN General Purpose Amplifier | 67.89 Kb, 5 Pages. | |
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2N5551 | Fairchild Semiconductor | NPN General Purpose Amplifier | 465.34 Kb, 12 Pages. | |
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2N5551 | Fairchild Semiconductor | NPN General Purpose Amplifier | 496.66 Kb, 12 Pages. | |
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2N5551 | Honey Technology | 160 V, NPN silicon expitaxial planar transistor | 129.8 Kb, 2 Pages. | |
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2N5551 | Korea Electronics | TRANS GP BJT NPN 160V 0.6A 3TO-92 | 64.39 Kb, 2 Pages. | |
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2N5551 | Korea Electronics | V(ceo): 160V I(c): 600mA P(c): 625mW NPN Silicon Transistor | 495.64 Kb, 5 Pages. | |
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2N5551 | Korea Electronics | High Voltage Transistor | 153.66 Kb, 2 Pages. | |
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2N5551 | Korea Electronics | EPITAXIAL PLANAR NPN TRANSISTOR | 141.56 Kb, 2 Pages. | |
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2N5551 | Micro Commercial Components | TRANS GP BJT NPN 160V 0.6A 3TO-92 | 350.57 Kb, 2 Pages. | |
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2N5551 | Micro Electronics | Semiconductor Devices | 49.59 Kb, 1 Pages. | |
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2N5551 | Micro Electronics | High Voltage Transistors | 102.75 Kb, 1 Pages. | |
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2N5551 | Micro Electronics | SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS | 165.68 Kb, 2 Pages. | |
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2N5551 | Micro Electronics | Semiconductor Device Data Book | 55.26 Kb, 1 Pages. | |
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2N5551 | Motorola | European Master Selection Guide 1986 | 51.87 Kb, 1 Pages. | |
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2N5551 | Motorola | The European Selection Data Book 1976 | 67.85 Kb, 2 Pages. | |
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2N5551 | National Semiconductor | General Purpose Amplifiers and Switches | 523.11 Kb, 16 Pages. | |
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2N5551 | National Semiconductor | NPN Transistors | 666.62 Kb, 17 Pages. | |
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2N5551 | National Semiconductor | NPN General Purpose Amplifier | 124.12 Kb, 4 Pages. | |
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2N5551 | National Semiconductor | High Voltage Amplifier | 67.3 Kb, 1 Pages. | |
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2N5551 | On Semiconductor | mplifier Transistors(NPN Silicon) | 187.24 Kb, 6 Pages. | |
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2N5551 | On Semiconductor | Amplifier Transistors NPN | 68.39 Kb, 8 Pages. | |
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2N5551 | Philips Semiconductors / NXP Semiconductors | Small-signal Transistors | 4.29 Kb, 1 Pages. | |
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2N5551 | Philips Semiconductors / NXP Semiconductors | NPN High-Voltage Transistor | 47.04 Kb, 8 Pages. | |
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2N5551 | Philips Semiconductors / NXP Semiconductors | NPN High-Voltage Transistor | 56.51 Kb, 3 Pages. | |
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2N5551 | ROHM Electronics | General Purpose Bipolar Transistor, NPN, 160V, TO-92, 3-Pin | 80.59 Kb, 2 Pages. | |
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2N5551 | Samsung Electronics | NPN EPITAXIAL SILICON TRANSISTOR | 75.02 Kb, 2 Pages. | |
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2N5551 | Semiconductors, Inc. | High Voltage Transistors | 282.75 Kb, 4 Pages. | |
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2N5551 | Semtech | NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications | 129.81 Kb, 2 Pages. | |
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2N5551 | Siemens Semiconductors | Cross Reference Guide 1998 | 26.71 Kb, 7 Pages. | |
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2N5551 | Sinyork Co., Ltd. | Mini size of Discrete semiconductor elements | 494.27 Kb, 15 Pages. | |
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2N5551 | Sprague | Small Signal TO-92 Plastic Transistors | 370.91 Kb, 5 Pages. | |
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2N5551 | Sprague | Semiconductor Data Book 1977 | 68.23 Kb, 1 Pages. | |
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2N5551 | Taitron Components | Small Signal High Voltage Transistor (NPN) | 151.88 Kb, 4 Pages. | |
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2N5551 | Thomson-CSF | Condensed Data Book 1977 | 38.05 Kb, 1 Pages. | |
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2N5551 | Thomson-CSF | Shortform Semiconductor Catalogue 1982 | 229.31 Kb, 2 Pages. | |
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2N5551 | Usha Ltd. | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. | 74.8 Kb, 2 Pages. | |
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2N5551 | Various Russian Datasheets | Transistor | 82.42 Kb, 8 Pages. | |
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2N5551 | Vishay | NPN SMALL SIGNAL TRANSISTOR | 83.46 Kb, 2 Pages. | |
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2N5551 | Weitron Technology | NPN Transistors | 159.68 Kb, 4 Pages. | |
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2N5551 | Zetex Semiconductors | Quick Reference Guide (Discrete Semiconductors) 1991 | 51.98 Kb, 1 Pages. | |
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2N5551 | N/A | Shortform Data and Cross References (Misc Datasheets) | 38.13 Kb, 1 Pages. | |
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2N5551 | N/A | Shortform Transistor Datasheet Guide | 89.74 Kb, 1 Pages. | |
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| Datasheets per page: 50 | 250 | 500 | |||||
| Fulltext Datasheet Results | 1 - 50 of about 271 for 2N5551 | ||||
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First line: 5551 datasheet 2n5551 transistor equivalent 2n5551 transistor 2N 5551 MARKING SPECIFICATION 2N5551 TO-92 PACKAGE Abstract: .. SEMICONDUCTOR 2N5551. 5551. 3 K 816. 2N 1. 2. 4. 1998. 6. 23 1/1. MARKING SPECIFICATION TO-92 TO-92 PACKAGE .. Tags: transistor equivalent 2n5551 5551 transistor transistor 2N 5551 transistor 2n S23DPF8A1 5551 datasheet 5551 2N5551 2N5551 | 22.59 Kb | 1 Pages | Original | |
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First line: 2N5551 equivalent 2N5551 transistor equivalent 2n5551 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Abstract: .. ST 2N5550 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors. for general purpose, high voltage amplifier. applications. As complementary types the PNP transistors. ST 2N5400 2N5400 and ST 2N5401 2N5401 are .. Tags: transistor equivalent 2n5551 2N5551 equivalent diode 2N5401 2N5551 2N5401 2N5550 2N5551 2N5400 2N5401 | 223.8 Kb | 3 Pages | Original | |
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First line: 2N5551 transistor equivalent 2n5551 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Abstract: .. ST 2N5550 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors. for general purpose, high voltage amplifier. applications. As complementary types the PNP transistors. ST 2N5400 2N5400 and ST 2N5401 2N5401 are .. Tags: transistor equivalent 2n5551 diode 2N5401 2n5551 2N5550 2N5551 2N5400 2N5401 | 229.35 Kb | 3 Pages | Original | |
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First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Abstract: .. ST 2N5550 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 2N5400 and ST 2N5401 2N5401 are .. Tags: diode 2N5401 2n5551 2N5550 2N5551 2N5400 2N5401 | 235.14 Kb | 2 Pages | Original | |
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First line: ic CD4081 pin diagram datasheet 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Abstract: .. ST 2N5550 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 2N5400 and ST 2N5401 2N5401 are .. Tags: ic CD4081 pin diagram datasheet diode 2N5401 2N5551 2N5401 2N5550 2N5551 2N5400 2N5401 | 217.02 Kb | 2 Pages | Original | |
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First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. ST 2N5550 2N5550 / 2N5551. NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 2N5400 and ST 2N5401 2N5401 are .. Tags: diode 2N5401 2N5551 2N5550 2N5551 2N5400 2N5401 | 184.49 Kb | 2 Pages | Original | |
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First line: 2N5551 circuit 2N5550 2N5551 2N5550 2N5551 Version 2006-06-17 Power dissipation Verlustleistung Abstract: .. 2N5550 2N5550 / 2N5551 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN Version 2006-06-17 Dimensions - Maße [mm] Power .. Tags: 2N5551 circuit 2N5551 2N5401 2N5550 2N5551 | 102.38 Kb | 2 Pages | Original | |
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First line: AL transistor transistor equivalent 2n5551 CP316V High Voltage Transistor Chip Abstract: .. PRINCIPAL DEVICE TYPES CMPT5551 CMPT5551 CXT5551 CXT5551 CZT5551 CZT5551 2N5551. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 4.0 x 4.0 MILS. Emitter Bonding Pad Area 4.7 x 4.7 .. Tags: transistor equivalent 2n5551 AL transistor ny transistor CXT5551* 2N5551 CP316V | 189.12 Kb | 2 Pages | Original | |
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First line: CP316V High Voltage Transistor Chip Abstract: .. PRINCIPAL DEVICE TYPES CMPT5551 CMPT5551 CXT5551 CXT5551 CZT5551 CZT5551 2N5551. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 4.0 x 4.0 MILS. Emitter Bonding Pad Area 4.7 x 4.7 .. Tags: 2N5551 CP316V | 229.65 Kb | 2 Pages | Original | |
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First line: CP316V High Voltage Transistor Chip Abstract: .. 2N5551. GROSS DIE PER 5 INCH WAFER 57,735. PROCESS CP316V CP316V Small Signal Transistors NPN - High Voltage Transistor Chip. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 7.1 MILS. Base Bonding .. Tags: CP316V | 472.58 Kb | 2 Pages | Original | |
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First line: Notification Date: October 2010 Product Process Change Notice Parts Affected: Chip process CP316V, high voltage transistors, wafers, chip form. Extent Change: overall reduction area. CP316V chip process currently measures mils being replaced CP336V chip process which measures 17.3 17.3 mils. Reason Abstract: .. CP316V-2N5551-CTAN CP316V-2N5551-CT CP316V-2N5551-WN CMLT5551 CMLT5551 . CMLT5554 CMLT5554 CMPT5551 CMPT5551 CMPT5551E CMPT5551E CMUT5551 CMUT5551 CMUT5551E CMUT5551E . CXT5551 CXT5551 CXT5551E CXT5551E CZT5551 CZT5551 CZT5551E CZT5551E . 2N5551 2N5832 2N5832 . Die Size: 20 x 20 mils. Die .. Tags: CP316V CP336V | 43.1 Kb | 2 Pages | Original | |
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First line: I1ER PHILIPS/DISCRETE bb53cl31 0D2fll74 2N5550 2N5551 SILICON N-P-N HIGH-VOLTGE TRNSISTORS N-P-N high-voltage small-signal transistors general purposes especially telephony applications encapsulated TO-92 envelope. P-N-P complements 2N5400 2N5401. QUICK REFERENCE Abstract: .. N AI1ER PHILIPS/DISCRETE I 1 LTE D â– bb53cl31 bb53cl31 0D2fll74 0D2fll74 CHT I 2N5550 2N5550 2N5551 IAPX A SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors for general purposes and .. Tags: datasheet abstract.. | 75.08 Kb | 3 Pages | OCR Scan | |
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First line: 2N5551-NPN* 2N5551-NPN 2N5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V Collector Dissipation: (max)=625mW Abstract: .. 2N5551 NPN EPITAXIAL SILICON TRANSISTOR. AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 160V 160V • Collector Dissipation: PC max =625mW 625mW . ABSOLUTE MAXIMUM RATINGS TA=25 ELECTRICAL .. Tags: 2N5551-NPN 2N5551-NPN* npn transistors 1ma 2N5551 2N5551 | 51.75 Kb | 3 Pages | Original | |
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First line: 2N5551 Abstract: .. 2N5551 NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V 180V , VCEO = 160V 160V • Low collector .. Tags: 2N5551 2N5401 2N5551 | 196.55 Kb | 3 Pages | Original | |
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First line: 2N5550 Amplifier Transistors 2N5550 2N5551* Abstract: .. Amplifier Transistors NPN Silicon. MAXIMUM RATINGS. Rating Symbol 2N5550 2N5550 2N5551 Unit. Collectorâ€Emitter Voltage VCEO 140 160 Vdc. Collectorâ€Base Voltage VCBO 160 180 Vdc. Emitterâ€Base Voltage .. Tags: 2N5550 2N5551 2N5550 2N5551 | 68.38 Kb | 8 Pages | Original | |
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First line: 2N5551-NPN UNISONIC TECHNOLOGIES CO., 2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR High collector-emitter voltage: VCEO=160V High current gain Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2N5551 NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 4. Copyright © 2009 Unisonic Technologies Co., Ltd QW-R201-002 QW-R201-002 .C. HIGH VOLTAGE SWITCHING TRANSISTOR. Ñ .. Tags: 2N5551-NPN 2N5551G specification 2N5551G* 2N5551 2N5551 | 165.9 Kb | 4 Pages | Original | |
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First line: transistor 2N 5551 2N5400 2N540 2N5550 2N555 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 2N5400, 2N540 (PNP) 2N5550, 2N555 (NPN) COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER SWITCHING APPLICATIONS. CASE TO-92A ABSOLUTE MAXIMUM Abstract: .. 2N5400 2N5400 2N5401 2N5401 2N5550 2N5550 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 THE 2N5400 2N5400 , 2N5401 2N5401 PNP AND 2N5550 2N5550 , 2N5551 NPN ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL .. Tags: transistor 2N 5551 datasheet abstract.. | 184.18 Kb | 2 Pages | OCR Scan | |
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First line: Small Signal Transistor High Voltage Transistor Chip CP316 Abstract: .. PRINCIPAL DEVICE TYPES CMPT5551 CMPT5551 CXT5551 CXT5551 CZT5551 CZT5551 2N5551. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 4.0 x 4.0 MILS. Emitter Bonding Pad Area 4.7 x 4.7 .. Tags: 2N5551 CP316 | 207.7 Kb | 2 Pages | Original | |
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First line: book, halfpage M3D186 Abstract: .. 2N5550 2N5550 ; 2N5551 NPN high-voltage transistors book, halfpage M3D186 M3D186 2004 Oct 28 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550 2N5550 ; 2N5551 FEATURES .. Tags: 2N5551 13548 datasheet abstract.. | 47.42 Kb | 7 Pages | Original | |
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First line: diodes inc 2N5551 book, halfpage M3D186 Abstract: .. 2N5550 2N5550 ; 2N5551 NPN high-voltage transistors book, halfpage M3D186 M3D186 1999 Apr 23 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550 2N5550 ; 2N5551 FEATURES .. Tags: diodes inc 2N5551 2N5551 datasheet abstract.. | 47.04 Kb | 8 Pages | Original | |
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First line: 2N5551- MMBT5551 General Purpose Amplifier 2N5551- MMBT5551 General Purpose Amplifier Abstract: .. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com. 2N5551- MMBT5551 MMBT5551 Rev. B. 2N5551- MMBT5551 MMBT5551 NPN General Purpose Amplifier. tm. April 2006. 2N5551- MMBT5551 MMBT5551 NPN General Purpose .. Tags: 2n5551 2N5551- | 155.03 Kb | 5 Pages | Original | |
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First line: 2N5551 POWER SEMICONDUCTOR SMALL SIGNAL TRANSISTOR High Collector Emitter Voltage Epitaxial Planar Construction Compliments Type 2N5401 General Purpose High-Voltage Amplifier Discharge Display Amplifier Mechanical Data_ Case: TO-92, Plastic Leads: Solderable MIL-STD-202, Method Abstract: .. VISHAY 2N5551 /liTEMÃ I7 / POWER SEMICONDUCTOR / NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 2N5401 General .. Tags: datasheet abstract.. | 101.99 Kb | 2 Pages | OCR Scan | |
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First line: 2N5551 2N5551 FEATURES Power dissipation TRANSISTOR (NPN) TO-92 Abstract: .. 2N5551 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. .. Tags: 2N5551 | 112.35 Kb | 1 Pages | Original | |
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First line: MPSA92 datasheet 2N5401 Small-signal Transistors LEADED DEVICES (continued) HIGH-VOLTAGE LOW-POWER TRANSISTORS TYPE NUMBER 2N5550 2N5551 BF420L BF422L MPSA42 MPSA43 MPSA44 MPSA45 PN3439 PN3440 PACKAGE TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 VCEO max. max. (mA) Ptot max. (mW) min. Abstract: .. 2N5551 TO-92 TO-92 160 300 630 80 >80 100 2N5401 2N5401 184. BF420L BF420L TO-92 TO-92 300 50 625 50 >50 60 BF421L BF421L 536. BF422L BF422L TO-92 TO-92 250 50 625 50 >50 60 BF423L BF423L 536. MPSA42 MPSA42 TO-92 TO-92 300 100 500 40 >40 50 MPSA92 MPSA92 822. MPSA43 MPSA43 TO-92 TO-92 200 100 500 .. Tags: MPSA92 datasheet MPSA93 MPSA42 diode 2N5401 630-60 2N5551 2N5401 2N5550 2N5551 | 4.27 Kb | 1 Pages | Original | |
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First line: 2N5550, 2N5551 Amplifier Transistors Abstract: .. 2N5550 2N5550 , 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5550 2N5550 2N5551 .. Tags: 2N5551 2N5550 2N5551 | 81.19 Kb | 6 Pages | Original | |
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First line: 2N5551 Transistors TO-92 EMITTER BASE COLLECTOR Abstract: .. 2N5551. WEITRON http://www.weitron.com.tw. IC=1.0 mAdc, VCE=5.0 Vdc DC Current Gain DC Current Gain. IC=10 mAdc, VCE= 5.0 Vdc 80 - 1 2 hFE 3 80. 0.5. 1.0. - Classification of hFE 1 Rank .. Tags: 2N5551 2N5551 | 159.67 Kb | 4 Pages | Original | |
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First line: NPN SMALL SÄ°GNAL TRANSISTOR Small Signal High Voltage Transistor (NPN) 2N5551 Small Signal High Voltage Transistor (NPN) High Voltage Transistor General Purpose Telephony Applications Abstract: .. Rev. A/AH 2007-11-09. 2N5551. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com. Page 1 of 4 Tel: 800 -TAITRON 800 -824-8766 661 -257-6060 Fax: 800 -TAITFA 800 -824-8329 .. Tags: NPN SMALL SÄ°GNAL TRANSISTOR NPN SMALL SIGNAL TRANSISTOR 2N5551 2N5551 | 151.89 Kb | 4 Pages | Original | |
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First line: 2N5551 Transistors TO-92 EMITTER BASE COLLECTOR Abstract: .. 2N5551. WEITRON http://www.weitron.com.tw. IC=1.0 mAdc, VCE=5.0 Vdc DC Current Gain DC Current Gain. IC=10 mAdc, VCE= 5.0 Vdc 80 - 1 2 hFE 3 80. 0.5. 1.0. - Classification of hFE 1 Range .. Tags: 2N5551 2N5551 | 223.55 Kb | 4 Pages | Original | |
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First line: 2N5551G 2N5550, 2N5551 Amplifier Transistors Abstract: .. 2N5550 2N5550 , 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. • These are Pb Free Devices* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5550 2N5550 2N5551 .. Tags: 2N5551G 2N5551 2N5550 2N5551 | 85.09 Kb | 6 Pages | Original | |
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First line: 2N5550, 2N5551 Amplifier Transistors Abstract: .. 2N5550 2N5550 , 2N5551 Preferred Device. Amplifier Transistors NPN Silicon. Features. ∞ Pb-Free Packages are Available* ∞ Device Marking: Device Type, e.g., 2N5550 2N5550 , Date Code. MAXIMUM RATINGS. Rating .. Tags: 2N5551 2N5550 2N5551 | 71.6 Kb | 6 Pages | Original | |
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First line: 2N5551 MMBT5551 General Purpose Amplifier 2N5551 MMBT5551 General Purpose Amplifier Abstract: .. 2N5551 / MMBT5551 MMBT5551 — NPN General Purpose Amplifier. © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com. 2N5551 / MMBT5551 MMBT5551 Rev. B1 1. June 2009. 2N5551 / MMBT5551 MMBT5551 NPN General Purpose .. Tags: 2N5551 2N5551 | 167.81 Kb | 5 Pages | Original | |
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First line: str 6707 datasheet diodes inc 2N5551 transistor equivalent 2n5551 book, halfpage M3D186 Abstract: .. 2N5550 2N5550 ; 2N5551 NPN high-voltage transistors book, halfpage M3D186 M3D186 1997 Apr 09 2 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550 2N5550 ; 2N5551 FEATURES .. Tags: transistor equivalent 2n5551 diodes inc 2N5551 str 6707 datasheet 2N5551 datasheet abstract.. | 66.35 Kb | 8 Pages | Original | |
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First line: UNISONIC TECHNOLOGIES CO., 2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR High collector-emitter voltage: VCEO=160V High current gain Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2N5551 NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 4. Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-002 QW-R201-002 .B . HIGH VOLTAGE SWITCHING TRANSISTOR .. Tags: 2N5551 2N5551 | 49.73 Kb | 4 Pages | Original | |
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First line: Order this document 2N5550/D Amplifier Transistors Abstract: .. Rating Symbol 2N5550 2N5550 2N5551 Unit. Collector †Emitter Voltage VCEO 140 160 Vdc. Collector †Base Voltage VCBO 160 180 Vdc. Emitter †Base Voltage VEBO 6.0 Vdc. Collector Current — Continuous IC 600 mAdc .. Tags: 2N5551 MOTOROLA 2N5551 2N5550 | 187.24 Kb | 6 Pages | Original | |
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First line: transistor cb 170 2N5551 This device designed general purpose high voltage amplifiers discharge display drivers. Abstract: .. 2N5551. NPN General Purpose Amplifier Transistor. Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Maximum Ratings Symbol Rating .. Tags: transistor cb 170 2N5551 "High-Voltage Amplifiers" 2N5551 | 304.73 Kb | 2 Pages | Original | |
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First line: omponents 20736 Marilla Street Chatsworth Abstract: .. 2N5551. NPN General Purpose Amplifier Transistor. Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Maximum Ratings Symbol Rating .. Tags: 2N5551 "High-Voltage Amplifiers" datasheet abstract.. | 350.57 Kb | 2 Pages | Original | |
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First line: CONTROLE M5003 LAMP DRIVER GENERAL DESCRIPTION M5003 CMOS chip design Electro-luminescence Lamp (EL) light independent circuit control switching driver frequency circuit, switching frequency decided CKX, connect resistor VDD, connect capacitor switching frequency adjusted. Delay function implement c Abstract: .. 2N5551 2N5551 EL CHOP CK TGB VSS S1 S2 CKX CHOPX OSC ON TG VDD VDD=3V M5003 M5003 底 .. 2N5551 2N5551 EL CHOP CK TGB VSS S1 S2 CKX CHOPX OSC VDD=3V M5003 M5003 底底底底=VDD .. Tags: in4148 2N5551 M5003 | 107.58 Kb | 4 Pages | Original | |
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First line: 2N5551 LITEMZI POWER SEMICONDUCTOR SMALL SIGNAL TRANSISTOR High Collector Emitter Voltage Epitaxial Planar Construction Compliments Type 2N5401 General Purpose High-Voltage Amplifier Discharge Display Amplifier Mechanical Data_ Abstract: .. VISHAY 2N5551 LITEMZI POWER SEMICONDUCTOR Ì NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 2N5401 General .. Tags: datasheet abstract.. | 65.37 Kb | 2 Pages | OCR Scan | |
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First line: 25551 MMBT5551 25551 Abstract: .. 2N5551 MMBT5551 MMBT5551 . NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum .. Tags: 3047 IC 2N5551 2N5551 | 117.31 Kb | 4 Pages | Original | |
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First line: 25551 25551 MMBT5551 Abstract: .. N 2N5551 MMBT5551 MMBT5551 . NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum .. Tags: 2N5551 2N5551 | 65.12 Kb | 4 Pages | Original | |
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First line: 2N5551 MMBT5551 2N5551 MMBT5551 Abstract: .. 2N5551 MMBT5551 MMBT5551 . NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum .. Tags: 2N5551 2N5551 | 109.73 Kb | 4 Pages | Original | |
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First line: 2n5551 2N5551 MMBT5551 2N5551 MMBT5551 Abstract: .. 2N5551 MMBT5551 MMBT5551 . NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* TA = 25 °C unless .. Tags: 2N5551 2N5551 | 67.89 Kb | 5 Pages | Original | |
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First line: transistor equivalent 2n5551 2N5551 RoHS Compliant Product suffix "-C" specifies halogen lead-free 4.55±0.2 Abstract: .. Elektronische Bauelemente. 2N5551 NPN Silicon. General Purpose Transistor. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual. 4.55 ±0.2 3.5 ±0.2. 4.5 ± .. Tags: transistor equivalent 2n5551 2N5551 2N5551 | 199.9 Kb | 2 Pages | Original | |
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First line: GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. Abstract: .. 2N5551. * Pulse Test : Pulse Width# 300 Ã S, Duty Cycle# 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO. VCB=120V 120V , IE=0 - - 50 nA. VCB=120V 120V , IE=0, Ta=100 .. Tags: 2N5551 datasheet abstract.. | 64.39 Kb | 2 Pages | Original | |
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First line: 2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR Abstract: .. UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-002 QW-R201-002 ,A HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V 160V .. Tags: 2N5551 2N5551 | 43.04 Kb | 2 Pages | Original | |
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First line: 2N5551 TO-92 Plastic-Encapsulate Transistors Transistor(NPN) FEATURES Power dissipation :0.625 (Tamb=25 Collector current :0.6 Collector-base voltage (BR)CBO :180 Operating storage junction temperature range :-55 +150 TO-92 Abstract: .. TO-92 TO-92 Plastic-Encapsulate Transistors Transistor NPN 2N5551. FEATURES. Power dissipation P :0.625 W Tamb=25 C Collector current I :0.6 A. Collector-base voltage V :180 V. Operating and storage .. Tags: 2N5551 2N5551 | 141.69 Kb | 2 Pages | Original | |
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First line: GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. Abstract: .. 2N5551. * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO. VCB=120V 120V , IE=0 - - 50 nA. VCB=120V 120V , IE=0, Ta=100 - - 50 .. Tags: 2N5551 2N5551 | 30.04 Kb | 2 Pages | Original | |
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First line: transistor cb 180 Transys Electronics TO-92 Plastic-Encapsulated Transistors Abstract: .. TO-92 TO-92 Plastic-Encapsulated Transistors 2N5551 TRANSISTOR NPN FEATURES Power dissipation PCM : 0.625 W Tamb=25 °C Collector current ICM: 0.6 A Collector-base voltage V BR CBO .. Tags: Transys Electronics transistor cb 180 2N5551 datasheet abstract.. | 62.9 Kb | 2 Pages | Original | |
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First line: General Purpose Amplifier FEATURES High Collector Breakdown Voltage; Noise; Complementary 2N5401 This device designed general purpose amplifier switch applications requiring high voltages. Abstract: .. @vic 2N5551. NPN General Purpose Amplifier. FEATURES & USE. Æ High Collector Breakdown Voltage; Low Noise; Æ Complementary to 2N5401 2N5401 Æ This device is designed as a general purpose amplifier and .. Tags: diode 2N5401 2N5551 2N5401 2N5401 | 20.63 Kb | 1 Pages | Original | |
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First line: 2N5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEo=160V Collector Dissipation: Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcbO Collector-Emitter Voltage VCEO Abstract: .. 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR †¢ Collector-Emitter Voltage: VCEo=160V 160V †¢ Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta=25 °C Characteristic .. Tags: datasheet abstract.. | 93.56 Kb | 2 Pages | OCR Scan | |
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| Datasheets per page: 50 | 250 | 500 | |||||
| Central Part | Industry Part | Type | Description |
|---|---|---|---|
| 2N5551 Buy | 2N5551_D26Z Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| 2N5551 Buy | 2N5551_D27Z Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| 2N5551 Buy | 2N5551_D74Z Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| 2N5551 Buy | 2N5551_D75Z Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| CMPT5551 Buy | 2N5551 Buy | SMD Small Signal Transistor NPN High Voltage | |
| CXT5551 Buy | 2N5551 Buy | SMD Small Signal Transistor NPN High Voltage | |
| CZT5551 Buy | 2N5551 Buy | SMD Small Signal Transistor NPN High Voltage | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
|---|---|---|---|---|---|---|
| 2N5550 | 2N5550TAR Buy | 2N5551 Buy | Advanced Semiconductor Inc | Close | Small Signal | NPN Epitaxial Silicon Transistor |
| Leshan Radio Company Part | Industry Part |
|---|---|
| LMBT5551LT1 Buy | 2N5551 Buy |
| NTE Electronics Part | Industry Part |
|---|---|
| NTE194 Buy | 2N5551 Buy |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
|---|---|---|---|---|
| 2N5551 Buy | 2N5830 Buy | |||
| 2N5551 Buy | 2N5831 Buy | |||
| 2N5551 Buy | 2N5965 Buy | |||
| 2N5551 Buy | 2N6021 Buy | |||
| 2N5551 Buy | 2SC1279 Buy | |||
| 2N5551 Buy | 2SC1941 Buy | |||
| 2N5551 Buy | 2SC2229 Buy | |||
| 2N5551 Buy | 2SC2958 Buy | |||
| 2N5551 Buy | 2SC2959 Buy | |||
| 2N5551 Buy | 2SC3332 Buy | |||
| 2N5551 Buy | A5T5551 Buy | |||
| 2N5551 Buy | MPS5551 Buy | |||
| 2N5551 Buy | PN5965 Buy | |||
| 2N5551 Buy | T15101 Buy | |||
| PMBT5551, PMST5551 Buy | 2N5551 Buy | Replacement For Discontinued NXP Product | ||
| PMBT5551, PMST5551 Buy | 2N5551/C Buy | Replacement For Discontinued NXP Product | ||
| On Semiconductor Part | Industry Part | Manufacturer | Type |
|---|---|---|---|
| 2N5550 Buy | 2N5551 Buy | Fairchild Semiconductor | Direct |
| 2N5550G Buy | 2N5551 Buy | Various | Direct |
| 2N5551G Buy | 2N1613 Buy | Various | Direct |
| 2N5551G Buy | 2N4410 Buy | Fairchild Semiconductor | Direct |
| 2N5551G Buy | 2N5551 Buy | NXP Semiconductors | Direct |
| 2N5551G Buy | KSC2003 Buy | Various | Direct |
| 2N5551G Buy | ZTX1056A Buy | Zetex Semiconductors | Close |
| 2N5551G Buy | ZTX655 Buy | Zetex Semiconductors | Close |
| 2N5551G Buy | ZTX855 Buy | Zetex Semiconductors | Close |
| 2N5551RLRPG Buy | ZTX455STZB Buy | Zetex Semiconductors | Close |
| Specsheet Results | ||||
|---|---|---|---|---|
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2N5551 | N/A | Silicon NPN | Specification |
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2N5551 | N/A | RME | Specification |
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2N5551/D75Z | Fairchild Semiconductor | Si NPN Lo-Pwr BJT | Specification |
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2N5551LT1 | N/A | NPN Transistor | Specification |
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2N5551T/R | Philips Semiconductors / NXP Semiconductors | Si NPN Lo-Pwr BJT | Specification |
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