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1 - 50 of about 126 for 2N5400 |
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First line: MARKING SPECIFICATION 2N5400 TO-92 PACKAGE Abstract: .. SEMICONDUCTOR 2N5400. 5400. 3 K 816. 2N 1. 2. 4. 1998. 6. 23 1/1. MARKING SPECIFICATION TO-92 TO-92 PACKAGE .. Tags: 2N5400 |
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First line: transistor 2N 5551 2N5400 2N540 2N5550 2N555 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 2N5400, 2N540 (PNP) 2N5550, 2N555 (NPN) COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER SWITCHING APPLICATIONS. CASE TO-92A ABSOLUTE MAXIMUM Abstract: .. 2N5400 2N5401 2N5401 2N5550 2N5550 2N5551 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 THE 2N5400, 2N5401 2N5401 PNP AND 2N5550 2N5550 , 2N5551 2N5551 NPN ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL .. Tags: transistor 2N 5551 datasheet abstract.. |
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First line: 2N5400 2N5401 2N5400 2N5401 Version 2006-06-17 Power dissipation Verlustleistung Abstract: .. 2N5400 / 2N5401 2N5401 PNP General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP Version 2006-06-17 Dimensions - Maße [mm] Power .. Tags: 2N5401 2N5400 2N5401 |
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First line: diode 2N5401 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Abstract: .. ST 2N5400 / 2N5401 2N5401 . PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 2N5550 and ST 2N5551 2N5551 are .. Tags: diode 2N5401Â transistor 2N5401 diode 2N5401 2N5401 2N5400 2N5401 2N5550 2N5551 |
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First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. ST 2N5400 / 2N5401 2N5401 . PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 2N5550 and ST 2N5551 2N5551 are .. Tags: transistor 2N5401 diode 2N5401 2N5401 2N5400 2N5401 2N5550 2N5551 |
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First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. ST 2N5400 / 2N5401 2N5401 . PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 2N5550 and ST 2N5551 2N5551 are .. Tags: diode 2N5401 2n5401 transistor 2N5401 2N5400 2N5401 2N5550 2N5551 |
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First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. ST 2N5400 / 2N5401 2N5401 . PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 2N5550 and ST 2N5551 2N5551 are .. Tags: diode 2N5401 2N5401 2N5400 2N5401 2N5550 2N5551 |
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First line: 2N5400 MOTOROLA 2N5401 Amplifier Transistors N5400 2N5401* Motorola Preferred Device COLLECTOR Boca Semiconductor Corp. (BSC) EMITTER Abstract: .. BSC BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 2N5401 Unit Collector-Emitter Voltage VCEO 120 150 Vdc Collector-Base Voltage vCBO 130 160 Vdc Emitter-Base Voltage Vebo 5.0 Vdc Collector .. Tags: 2N5401 2N5400 MOTOROLA datasheet abstract.. |
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First line: 2N5400 2N5400 Abstract: .. 2N5400. Discrete POWER & Signal Technologies. PNP General Purpose Amplifier. 2N5400. This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced .. Tags: diode 2N5401 2N5401 2N5400 |
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First line: 2N5401 Small-signal Transistors LEADED DEVICES (continued) HIGH-VOLTAGE LOW-POWER TRANSISTORS TYPE NUMBER 2N5550 2N5551 BF420L BF422L MPSA42 MPSA43 MPSA44 MPSA45 PN3439 PN3440 PACKAGE TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 VCEO max. max. (mA) Ptot max. (mW) min. max. min. (MHz) Abstract: .. 2N5550 2N5550 TO-92 TO-92 140 300 630 60 >60 100 2N5400 184. 2N5551 2N5551 TO-92 TO-92 160 300 630 80 >80 100 2N5401 2N5401 184. BF420L BF420L TO-92 TO-92 300 50 625 50 >50 60 BF421L BF421L 536. BF422L BF422L TO-92 TO-92 250 50 625 50 >50 60 BF423L BF423L 536. MPSA42 MPSA42 TO-92 TO-92 300 100 .. Tags: MPSA93 MPSA42 diode 2N5401 630-60 2N5551 2N5401 2N5550 2N5551 |
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First line: TO-92 Plastic-Encapsulate Transistors 2N5400 Abstract: .. 2N5400 TRANSISTOR PNP FEATURE z Switching and amplification in high voltage Applications such as telephony z Low current max. 600mA 600mA z High voltage max.130v 130v MAXIMUM RATINGS TA .. Tags: 2N5400 |
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First line: diode 2N5401 2N5400, 2N5401 Amplifier Transistors Abstract: .. 2N5400/D. 2N5400, 2N5401 2N5401 Preferred Device. Amplifier Transistors PNP Silicon. Features • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol 2N5400 2N5401 2N5401 Unit. Collector Emitter .. Tags: diode 2N5401 2N5401 2N5400 2N5401 |
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First line: book, halfpage M3D186 Abstract: .. 2N5400; 2N5401 2N5401 PNP high-voltage transistors book, halfpage M3D186 M3D186 1997 May 22 2 Philips Semiconductors Product specification PNP high-voltage transistors 2N5400; 2N5401 2N5401 FEATURES .. Tags: 2n5401 transistor 2N5401 datasheet abstract.. |
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First line: Order this document 2N5400/D Amplifier Transistors Abstract: .. Rating Symbol 2N5400 2N5401 2N5401 Unit. Collector ‐ Emitter Voltage VCEO 120 150 Vdc. Collector ‐ Base Voltage VCBO 130 160 Vdc. Emitter ‐ Base Voltage VEBO 5.0 Vdc. Collector Current — Continuous IC 600 mAdc .. Tags: transistor 2N5401 diode 2N5401 2N5401 MOTOROLA 2N5401 2N5400 MOTOROLA 2n5400 2N5400 |
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First line: nj TRANSISTOR 2N6180 2N5130 2N6179 2N5133 DIGITRON ELECTRONIC CORP SflMatO? DDGDODti Page DIQITKON ELKTRONIQ QORE Hillside Avenue Springfield, Jersey 07081 201-379-9016 201-379-9019 201-467-8065 JOHN SCHWARTZ ENGINEERING DIGITRON ELECTRONICS, CORP. Hillside Avenue Springfield, 07081 Abstract: .. 2N5117 2N5117 2N5331 2N5331 2N6082 2N6082 2N5118 2N5118 2N5333 2N5333 2N6083 2N6083 2N5119 2N5119 2N5334 2N5334 2N6086 2N6086 2N5120 2N5120 2N5400 2N6178 2N6178 2N5121 2N5121 2N5401 2N5401 2N6179 2N6179 2N5122 2N5122 2N5415 2N5415 2N6180 2N6180 2N5130 2N5130 2N5416 2N5416 2N6181 2N6181 2N5131 2N5131 2N5417 2N5417 2N6190 2N6190 2N5132 2N5132 2N5427 2N5427 2N6191 2N6191 .. Tags: 2N5133 2N6179 2N5130 2N6180 nj TRANSISTOR datasheet abstract.. |
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First line: data 2n5401 AUER PHLPS/DSCRETE bbS3T31 DaSfilb7 2N5401 SLCON P-N-P HGH-VOLTAGE TRANSSTORS P-N-P high-voltage small-signal transistors general purposes especially telephony applications encapsulated TO-92 envelope. N-P-N complements 2N5550 2N5551. QUCK REFERENCE DATA 2N5400 2N5401 Abstract: .. QUICK REFERENCE DATA 2N5400 2N5401 2N5401 Collector-base voltage open emitter -VCBO max. 130 160 V Collector-emitter voltage open base -VCEO max. 120 150 V Collector current -ic max. 600 600 mA .. Tags: data 2n5401 datasheet abstract.. |
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First line: GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. Abstract: .. 2N5400. * Pulse Test : Pulse Width# 300 Ã S, Duty Cycle# 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO. VCB=-100V -100V , IE=0 - - -100 nA. VCB=-100V -100V , IE=0 .. Tags: 2N5400 |
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First line: 2N5400 RoHS Compliant Product suffix "-C" specifies halogen lead-free -0.6 -130 Plastic Encapsulated Transistor Abstract: .. 2N5400 -0.6 A, -130 V. PNP Plastic Encapsulated Transistor Elektronische Bauelemente. 29-Dec-2010 29-Dec-2010 Rev. A Page 1 of 2. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed .. Tags: 2N5400 |
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First line: Discrete POWER Signal PAIRCHILD Technologies SEMICONDUCTOR 2N5400 TO-92 General Purpose Amplifier This device designed general purpose amplifiers switches requiring high voltages. Sourced from Process 2N5401 characteristics. Absolute Maximum Ratings* unless otherwise noted Symbol Parameter Value Uni Abstract: .. Discrete POWER & Signal PAIRCHILD Technologies SEMICONDUCTOR â„ 2N5400 C ^ TO-92 TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring .. Tags: datasheet abstract.. |
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First line: SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. High Collector Breakdwon Voltage Vcbo=-130V, VCEo=-120V Leakage Current. Icbo=~ (Max.) @VCB=-100V Saturation Voltage Abstract: .. KEC SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES †High Collector Breakdwon Voltage : Vcbo=-130V -130V .. Tags: datasheet abstract.. |
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First line: KOREA ELECTRONICS CO.,LTD. 2N5400 EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. High Collector Breakdwon Voltage VCbo=-130V, VCeo=-120V Abstract: .. KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N5400 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES * High Collector Breakdwon .. Tags: datasheet abstract.. |
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First line: SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package Abstract: .. PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400. TO-92 TO-92 Plastic Package. Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL UNIT. Collector Emitter Voltage VCEO V. Collector Base .. Tags: 2N5400 |
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First line: SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package Abstract: .. PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400. TO-92 TO-92 Plastic Package. Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL UNIT. Collector Emitter Voltage VCEO V. Collector Base .. Tags: 2N5400 |
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First line: 2N6719 High VoltageAmplifiers bSQ1130 OOBiSaE bfll NSCS NATL SEHICOND (DISCRETE VCEO<sust) (Volts) Device (mA) hFE@lc VcEfsat) (MHz) Package (Amb) (mW) (mA) (Volts) (mA) (mA) 2N6719 TO-237(91 MMBTA42 TO-236* MPSA42 TO-92(92) MMBTA92 TO-236* Abstract: .. 10 0.25 50 5.0 100 TO-92 TO-92 92 350 MMBT5550 MMBT5550 600 60 10 0.25 50 5.0 100 TO-236 TO-236 * 350 120 2N5400 600 40 10 0.5 50 5.0 100 TO-92 TO-92 92 625 100 MPSL51 MPSL51 600 40 50 0.3 50 5.0 60 TO-92 TO-92 92 625 2N5830 2N5830 200 80 10 0.25 50 5 100 .. Tags: 2N6719 datasheet abstract.. |
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First line: 2N5400 AMPLIFIER TRANSISTOR Collector-Base Voltage: VCCO=120V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -130 Collector-Emitter Voltage vCEO -120 Abstract: .. 2N5400 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR †Collector-Base Voltage: VCCO=120V 120V †Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta=25 C Characteristic .. Tags: datasheet abstract.. |
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First line: SAMSUNG TlbMlMS 0007154 2N5400 EPITAXIAL SILICON TRANSISTOR 29-21 AMPLIFIER TRANSISTOR Collector-Base Voltage: Veto =120V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO Abstract: .. SAMSUNG S EM I CON DUG TOR INC 14E D | TlbMlMS 0007154 2N5400 PNP EPITAXIAL SILICON TRANSISTOR 29-21 AMPLIFIER TRANSISTOR †Collector-Base Voltage: Veto =120V 120V †Collector Dissipation: Pc .. Tags: datasheet abstract.. |
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First line: Transistors 2N5400 AMPLIFIER TRANSISTOR Collector-Base Voltage: Vceo=120V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -130 Collector-Emitter Voltage VCEO -120 Emitter-Base Voltage Vebo Abstract: .. Transistors 2N5400 AMPLIFIER TRANSISTOR †Collector-Base Voltage: Vceo=120V 120V †Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta=25 C Characteristic Symbol Rating .. Tags: datasheet abstract.. |
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First line: 2N5400 Amplifier Transistors Abstract: .. 2N5400 Preferred Device. Amplifier Transistors PNP Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage VCEO 120 Vdc. Collector .. Tags: 2N5400 |
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First line: 2N5400 2N5400 Abstract: .. 2N5400. This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting .. Tags: datasheet abstract.. |
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First line: 2N5400 2N5400 Abstract: .. 2N5400. This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting .. Tags: 2N5400 |
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First line: 5400/5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Please refer "TO-92 TRANSISTOR PACKAGE OUTLINE" page ava Abstract: .. hpE hpE hpE 30 50 40 60 40 50 - 180 240 - Collector Emitter Breakdown Voltage at -I = 1 mA HN/2N5400 HN/2N 5401 "^ BR CEO -V BR OEO 120 150 - - V V Collector Base Breakdown Voltage at -L = 100 |0.A HN/2N5400 .. Tags: datasheet abstract.. |
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First line: ZTX?58 TABLE NPN/PNP HIGH VOLTAGE TRANSISTORS transistors shown this table designed driving numerical indicator tubes, neon lamps other applications requiring high voltage capability. Type VCBO Vceo VCE(sat) Pto. "l"amb Complement ZTX658 1000 ZTX758 ZTX458 1000 ZTX558 ZTX6575 1000 ZTX757 M Abstract: .. 150 15 100 300 150 0.1 140 1000 ZTX555 ZTX555 2N5550 2N5550 160 140 600 0.25 50 5 60 250 10 0.1 100 350 2N5400 ZTX654 ZTX654 125 125 1000 0.5 1000 200 50 500 0.1 100 1000 ZTX754 ZTX754 ZTX454 ZTX454 140 120 1000 0.7 150 15 100 300 150 0.1 120 1000 .. Tags: ZTX?58 datasheet abstract.. |
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First line: Abstract: .. 4 Note 8 68 5-5 PN5138 PN5138 TO-92 TO-92 92 30 30 5 50 20 50 50 50 800 10 1 0.1 10 10 10 0.3 1 10 7 30 0.5 68 2N5400 TO-92 TO-92 92 130 120 5 100 100 40 40 30 180 50 10 1 5 5 5 0.2 0.5 1 10 1 50 6 100 400 10 8 Note 9 74 2N5401 2N5401 TO-92 TO-92 .. Tags: datasheet abstract.. |
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First line: MPSA25 HIGH VOLTAGE TRANSISTORS TYPE bvceq (mA) rnlir (mA) VCE(sat) (mA) min' (MHz) (mA) 2N3439 TO-39 1000 0.50 2N344Q TO-39 1000 0.50 2N5550 TO-92 0.25 2N5551 TO-92 0.20 MPSA42 TO-92 0.50 Abstract: .. PN3439 PN3439 TO-92 TO-92 350 1000 40 20 0.50 50 70 10 PN3440 PN3440 TO-92 TO-92 250 1000 40 20 0.50 50 70 10 PNP 2N5400 TO-92 TO-92 120 600 40 10 0.50 50 100 10 2N5401 2N5401 TO-92 TO-92 150 600 60 10 0.50 50 100 10 2N5415 2N5415 TO-39 TO-39 200 1000 30 50 2.50 50 15 .. Tags: MPSA25 datasheet abstract.. |
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First line: SE4020* SE4020 FAIRCHILD TRANSISTORS SMALL SIGNAL LEVEL, NOISE AMPLIFIER TRANSISTORS ASCENDING VCEO) (Cont'd) DEVICE VCEO @'C Polarity Package Item Min/Max Min/Max PN4249 100/300 0.10 100/- TO-92 2N3965 180/- 0.001 250/500 0.01 TO-18 BFX37 70/300 0.01 100/- TO-18 Abstract: .. 80/500 25 100 40 814 1.79 TO-92 TO-92 17 BC530 BC530 120 40/180 10 100 6.0 625 1.0 TO-92 TO-92 18 2N5400 120 40/180 10 100 6.0 625 1.0 TO-92 TO-92 19 BFY57 BFY57 125 30/150 30 40 12 800 5.0 TO-39 TO-39 20 BC532 BC532 140 60/250 10 100 6.0 814 1.79 TO .. Tags: SE4020 SE4020* datasheet abstract.. |
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First line: 2N5460 2N5481 2N5463 2N5465 2N5460-2N5465 P-Channel JFET RATING SYMBOL 2N5460 2N5461 2N5462 2N5463 2N5464 2N5465 UNITS Drain-Gate Voltage Reverse Gate-Source Voltage VGS(r) Forward Gate Current 'Gif! mAdc Total Device Dissipation Derate above 2.82 Storage Temperature Range TStfl to+150 Abstract: .. 2N5460 2N5460 , 2N5463 2N5463 , 2N5400, 2N5463 2N5463 , 2N5461 2N5461 , 2N5464 2N5464 , 2N5463 2N5463 2N5464 2N5464 2N5465 2N5465 2N5461 2N5461 , 2N5464 2N5464 , 2N5461 2N5461 , 2N5464 2N5464 , 2N5462 2N5462 2N5465 2N5465 Gate-Source Breakdown Voltage Gate-Source Cu"toff Voltage ,. fO 0.75 .. Tags: 2N5465 2N5463 2N5481 2N5460 datasheet abstract.. |
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First line: 2N5401 2N5401 Amplifier Transistors Abstract: .. Rating Symbol 2N5400 2N5401 2N5401 Unit. Collector - Emitter Voltage VCEO 120 150 Vdc. Collector - Base Voltage VCBO 130 160 Vdc. Emitter - Base Voltage VEBO 5.0 Vdc. Collector Current - Continuous IC 600 mAdc .. Tags: diode 2N5401 2N5401 2N5401 |
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First line: Amplifier Transistors Abstract: .. Amplifier Transistors PNP Silicon. MAXIMUM RATINGS. Rating Symbol 2N5400 2N5401 2N5401 Unit. Collector‐Emitter Voltage VCEO 120 150 Vdc. Collector‐Base Voltage VCBO 130 160 Vdc. Emitter‐Base Voltage .. Tags: diode 2N5401 2N5401 datasheet abstract.. |
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First line: 2N5551 circuit 2N5550 2N5551 2N5550 2N5551 Version 2006-06-17 Power dissipation Verlustleistung Abstract: .. 2N5400 / 2N5401 2N5401 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden .. Tags: 2N5551 circuit 2N5551 2N5401 2N5550 2N5551 |
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First line: 2n5551 transistor equivalent 2n5551 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Abstract: .. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 TO-92 Plastic .. Tags: transistor equivalent 2n5551 diode 2N5401 2n5551 2N5550 2N5551 2N5400 2N5401 |
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First line: 2N555* 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Abstract: .. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 TO-92 Plastic .. Tags: 2N555* diode 2N5401 2N5551 2N5401 2N5550 2N5551 2N5400 2N5401 |
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First line: transistor 2n5550 equivalent 2n5551 transistor equivalent 2n5551 2N5551 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different conf Abstract: .. ST 2N5400 and ST 2N5401 2N5401 are recommended. On special request, these transistors can be. manufactured in different pin configurations. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value .. Tags: transistor equivalent 2n5551 equivalent 2n5551 transistor 2n5550 diode 2N5401 2N5551 2N5401 2N5550 2N5551 2N5400 2N5401 |
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First line: 2N5551 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Abstract: .. ST 2N5400 and ST 2N5401 2N5401 are recommended. On special request, these transistors can be. manufactured in different pin configurations. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value .. Tags: diode 2N5401 2n5551 2N5550 2N5551 2N5400 2N5401 |
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First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 TO-92 Plastic .. Tags: diode 2N5401 2N5551 2N5550 2N5551 2N5400 2N5401 |
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First line: MPS2307* BF845 BF845* 2N6520 MOTOROLA MPS2307 SMALL-SIGNAL TRANSISTORS PLASTIC (continued) High Voltage Amplifier Transistors (TO-92 EBC)* These high-voltage transistors designed driving neon bulbs Nixie@ indicator tubes, direct line operation, other applications requiring high-voltage capability re Abstract: .. 0.5 40 10 0.2 20 2 50 10 MPS-A93 MPS-A93 200 0.5 40 10 0.4 20 2 50 10 2N5401 2N5401 150 0.6 60 10 0.2 10 1 100 10 2N5400 120 0.6 40 10 0.2 10 1 100 10 MPS-L51 MPS-L51 100 0.6 40 50 0.25 10 1 60 10 * ECB PIN OUT BF420 BF420 /1/2/3 : Table 10. CBE .. Tags: MPS2307 2N6520 MOTOROLA BF845* BF845 MPS2307* datasheet abstract.. |
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First line: 5551 BR 5551 HN/2N 5550/5551 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5400 2N5401 recommended. special request, these transistors manufactured different configurations. Please refer "TO-92 TRANSISTOR PACKAGE OUT Abstract: .. As complementary types the PNP transistors 2N5400 and 2N5401 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the .. Tags: BR 5551 5551 transistor 2N 5551 datasheet abstract.. |
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First line: ZTX?58 ^70570 DGDb^M2 HZETB TABLE NPN/PNP HIGH VOLTAGE TRANSISTORS transistors shown this table designed driving numerical indicator tubes, neon lamps other applications requiring high voltage capability. Type VcBO Vceo vCE(sat) P,o. 1"amb Complement ZTX658 1000 ZTX758 ZTX458 1000 ZTX558 ZTX657 Abstract: .. .1 100 1000 ZTX654 ZTX654 ZTX554 ZTX554 140 125 1000 0.3 100 10 50 300 300 0.1 120 1000 ZTX454 ZTX454 2N5400 130 120 600 0.5 50 5 40 180 10 0.1 100 350 2N5550 2N5550 ZTX542 ZTX542 120 120 100 0.5 2 0.1 30 — 2 0.5 100 300 ZTX342 ZTX342 ZTX541 ZTX541 100 100 .. Tags: ZTX?58 datasheet abstract.. |
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First line: 2N3114 BFX98 MPSD02 MPSD52 BFW45 High Voltage Transistors TYPE POLARITY CASE MAXIMUM RATINGS VCE(SAT) (MHz) (pF) (mW) 'cm (mAI VCEO VCER ImAI (mA) BFS89 TO-39 BFS90 TO-39 BFS91 TO-39 BFT47 TO-39 5000 BFT48 TO-39 5000 Abstract: .. 150 300 35 150 30 25 1 30 30 10 2N5059 2N5059 N TO-39 TO-39 1000 150 250 30 150 30 25 1 30 30 10 2N5400 P TO-92A TO-92A 350 600 120 40 180 10 5 0.5 50 100 6 2N5401 2N5401 P TO-92A TO-92A 350 600 150 60 240 10 5 0.5 50 100 6 2N5550 2N5550 N TO-92A TO-92A 350 600 140 60 .. Tags: BFW45 MPSD52 MPSD02 BFX98 2N3114 datasheet abstract.. |
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First line: TO-92 Plastic Package Transistors (PNP) Maximum Ratings Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Type ^C80 ^ceo Vebo 'cBO (MA) 'ces (MA) 0(V) (mA) ce(sat) 3eisat) (mA) (PF) (MHz) (mA) (dB) Freq (MHz) (PFJ CDIL Case Style 2N4972 0.625 0.02 300- TO-92 2N5086 0.625 0.05 0.0 Abstract: .. 4 0.625 0.6 0.1 40 0.1 40 40 100 80 300 300 50 2 5 1 10 0.25 1 1.1 50 2 300 8 250 2 TO-92-1 TO-92-1 2N5400 130 120 5 0.5 0.6 0.1 100 40 40 30 180 50 10 1 5 5 5 0.2 0.5 1 10 1 50 6 100 400 10 8 TO-92 TO-92 2N5401 2N5401 160 150 5 0.625 0.6 0.05 120 .. Tags: datasheet abstract.. |
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First line: BC337/BC327 BC415B BC338/BC328 MPSA18 BC550 NOISE GOOD LINEARITY These devices designed applications where good linearity noise characteristics required: Instrumentation, Hi-Fi Preamplifier. BVCEO JLIA/5 (Volts) Amb. Min. Typ. BC239 BC309 BC239A BC309A BC239B BC309B BC239C BC309C BC413 BC415 Abstract: .. MIPSL01 MIPSL01 2N5400 120 625 600 50 2IM5550 2IM5550 140 625 600 60 2IN5551 2IN5551 160 625 600 80 2N 5401 150 625 600 60 BF391 BF391 BF491 BF491 200 625 500 40 BF392 BF392 BF492 BF492 250 625 500 40 BF393 BF393 BF493 BF493 300 625 500 40 11 -14 HFE 2 mA/5 V 1 VT 120 .. Tags: MPSA18 BC550 BC338/BC328 BC415B BC337/BC327 datasheet abstract.. |
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