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2N5322 Central Semiconductor Corp Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
2N5322 LEAD FREE Central Semiconductor Corp TRANS PNP 75V 2A TO-39 visit Digikey Buy

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2N5322 Datasheet

Part Manufacturer Description PDF Type
2N5322 Central Semiconductor Small Signal Transistors Original
2N5322 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 75V 2A TO-39 Original
2N5322 Semelab HIGH SPEED MEDIUM VOLTAGE SWITCHES - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Original
2N5322 Semelab High Speed Medium Voltage Switches - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Original
2N5322 STMicroelectronics SMALL SIGNAL PNP TRANSISTORS - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Original
2N5322 STMicroelectronics Small Signal PNP Transistor Original
2N5322 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N5322 API Electronics Short form transistor data Scan
2N5322 API Electronics Short form transistor data Scan
2N5322 Boca Semiconductor SWITCHING TRANSISTORS (PNP SILICON) - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Scan
2N5322 Fairchild Semiconductor 10 Watt NPN-PNP Silicon Power - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Scan
2N5322 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N5322 General Diode Transistor Selection Guide Scan
2N5322 General Electric General purpose P-N-P silicon power transistor. - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Scan
2N5322 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5322 N/A Transistor Shortform Datasheet & Cross References Scan
2N5322 N/A Basic Transistor and Cross Reference Specification Scan
2N5322 N/A Basic Transistor and Cross Reference Specification Scan
2N5322 N/A Shortform Transistor PDF Datasheet Scan
2N5322 N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

2N5322

Catalog Datasheet MFG & Type PDF Document Tags

2N5322

Abstract: 2N5323 PNP 2N5322 ­ 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP , Junction Temperature TStg Storage Temperature range Value 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 Unit -75 -50 -100 -75 -100 -75 -6 -5 V V V V -2 A -1 A 1 , COMSET SEMICONDUCTORS Value 2N5322 2N5323 2N5322 2N5323 Unit 175 °C/W 17.5 °C/W
Comset Semiconductors
Original

2N5322

Abstract: 2N5323 2N5322 2N5323 PNP SWITCHING TRANSISTORS MAXIMUM RATINGS RATINGS SYMBOL 2N5322 2N5323 UNITS , 2N5322 2N5323 V(BR)ceo 75 50 Vdc Collector Cutoff Current VCE = 100 Vdc, VBE= 1.5 Vdc 2N5322 0.1 VCE = 70 Vdc, VBE= 1.5 Vdc, Tc= 150°C 2N5322 Icf.x 5.0 mAdc VCE = 75 Vdc, VBE = 1.5 Vdc , Vdc, Ic = 0 VBE = 5.0 Vdc, Ic = 0 2N5322 2N5323 'ebo 0.1 0.1 m Ade ON CHARACTERISTICS (1) DC Current Gain Ic = 500 mAdc, VCE = 4.0 Vdc 2N5322 hFE 30 130 2N5323 40 250 - Ic= 1.0 Adc, VCE
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OCR Scan
80M46

2N5320 RCA

Abstract: I3007 Transistors File Number 325 2N5320, 2N5321, 2N5322, 2N5323 Complementary N-P-N & P-N-P Silicon Power Transistors General-Purpose Types for Small-Signal, Medium-Power Applications Features: , â  2N5322 ] p'N-p , collector current terminal designations The RCA-2N5320, 2N5321, 2N5322 and 2N5323 are doubled-diffused , salient features of that device. The 2N5322 and 2N5323, p-n-p complements of the 2N5320 and 2N5321, are , . The 2N5320, 2N5321, 2N5322, and 2N5323 are supplied in jedec to-205AD the TO-2Q5AD package. MAXIMUM
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OCR Scan
2N2102 2N4036 2NS323 2N5320 RCA I3007 2N5321 RCA I3001 RCA 2N5321 sl 100b DD171S4 T-73- 3ZCS-15005RI

transistor pnp 30V 1A 1W

Abstract: 2N5322 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE , ) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) The 2N5322 and 2N5323 are silicon planar , VCEO VEBO IC IB Ptot 2N5322 -100V -100V -75V -6V Collector ­ Base Voltage (IE = 0 , 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter , )CEV VCB = -80V IE = 0 2N5322 VCB = -60V IE VEB = -5V IC = 0 2N5322 -0.1 VEB =
Semelab
Original
transistor pnp 30V 1A 1W NPN Transistor VCEO 80V 100V transistor pnp 30V 2A 1W N5323
Abstract: 2N5322 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N5322 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N5322 at our online store! 2N5322 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5322 Information Did you Know , Request a Quote Test Houses 2N5322 Specifications Military/High-Rel : N V(BR)CEO (V) : 75 V(BR)CBO (V American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: DATA SHEET 2N5320 2N5322 2N5321 2N5323 NPN PNP COMPLEMENTARY SILICON SWITCHING , Resistance ΘJA 2N5320 2N5322 100 100 75 6.0 2N5321 2N5323 75 75 50 5.0 2.0 1.0 10 , ) IC=500mA, IB=50mA (2N5322) IC=500mA, IB=50mA (2N5323) VCE=4.0V, IC=500mA VCE=4.0V, IC=500mA VCE=2.0V, IC=1.0A VCE=4.0V, IC=50mA, f=10MHz 2N5320 2N5322 MIN MAX 0.5 0.1 100 75 6.0 0.5 0.7 , noted) 2N5320 2N5322 TEST CONDITIONS MIN MAX SYMBOL ton VCC=30V, IC=500mA, IB1=50mA (2N5320 Central Semiconductor
Original

2N5322

Abstract: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305 , (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. The 2N5322 and , °C Tcase = 50°C Storage and Junction temperature 2N5322 -100V -100V -75V -6V 2N5323 -75V -75V -50V , 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter ICBO , -5V VEB = -4V VBE = 1.5V IE = 0 2N5322 IE Min. Typ. Max. Unit -0.5 -5 -0.1 -0.5 µA µA =
Semelab
Original

2N5322

Abstract: 2N5323 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value 2N5322 Unit 2N5323 V CBO Collector-Base , W 10 W -65 to 200 o C 1/4 2N5322/2N5323 THERMAL DATA R thj-case R thj-amb , Cut-off Current (I E = 0) V CB = -80 V V CB = -60 V for 2N5322 for 2N5323 I EBO Collector
STMicroelectronics
Original
2N5322/2N5323 P008B

2N5320

Abstract: 2N5321 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE , ) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) The 2N5322 and 2N5323 are silicon planar , VCEO VEBO IC IB Ptot 2N5322 -100V -100V -75V -6V Collector ­ Base Voltage (IE = 0 , 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter , Current V(BR)CEV VCB = -80V IE = 0 2N5322 VCB = -60V IE VEB = -5V IC = 0 2N5322
Semelab
Original
2N5322 2N5320

2N5323

Abstract: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305 , (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. The 2N5322 and , °C Tcase = 50°C Storage and Junction temperature 2N5322 -100V -100V -75V -6V 2N5323 -75V -75V -50V , 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter ICBO , -5V VEB = -4V VBE = 1.5V IE = 0 2N5322 IE Min. Typ. Max. Unit -0.5 -5 -0.1 -0.5 µA µA =
Semelab
Original

2N5322

Abstract: 2N5323 Boca Semiconductor Corp. (BSC) MAXIMUM RATINGS Rating Symbol 2N5322 2N5323 Unit , Thermal Resistance, Junction to Case RftJC 17.5 °C/W 2N5322 2N5323 CASE 79-04, STYLE 1 TO-39 (TO , mAdc, IB = 0) 2N5322 2N5323 V(BR)CEO 75 50 - Vdc Collector Cutoff Current (Vce = 100 Vdc, Vbe = 1-5 , Vdc, Tc = ibo=c) 2N5322 2N5323 'CEX â'" 0.1 5.0 Ã.1 5.0 mAdc Emitter Cutoff Current (vBe = 7.o Vdc, ic = o) (Vbe = 5.o vdc, ic = o) 2N5322 2N5323 Iebo - 0.1 0.1 mAdc ON CHARACTERISTICS!-!) DC
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OCR Scan
Scans-00155738 N5322

2N5320

Abstract: 2N5321 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE , ) The 2N5322 and 2n5323 are silicon planar expitaxial PNP transistors in jedec TO-39 metal case , VEBO IC IB Ptot 2N5322 -100V -100V -75V -6V Collector ­ Base Voltage (IE = 0) Collector ­ , . Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/99 2N5322 2N5323 , -80V IE = 0 2N5322 VCB = -60V IE VEB = -5V IC = 0 2N5322 -0.1 VEB = -4V IC =
Semelab
Original

2N5322 2N5320

Abstract: pnp 500ma - 40v 2N5320 2N5321 2N5322 2N5323 NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are , Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC IB PD TJ, Tstg JA JC 2N5320 2N5322 100 100 75 6.0 , ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5320 2N5322 SYMBOL TEST CONDITIONS MIN MAX , VCE(SAT) IC=500mA, IB=50mA (2N5322) VCE(SAT) IC=500mA, IB=50mA (2N5323) VBE(ON) VCE=4.0V, IC=500mA 1.1
Central Semiconductor
Original
pnp 500ma - 40v 500ma 40v pnp pnp 500ma 40v NPN for 500ma, 30v Ic-500mA NPN, PNP for 500ma, 30v

2N5322 2N5320

Abstract: 2N5322 2N5320 & 2N5322 Medium Power Transistors Features: · High performance, low frequency devices , Medium Power Amplifier and Switching Applications. 2N5320 NPN 2N5322 PNP TO-39 Metal Can Package , 2. Base 3. Collector Page 1 31/05/05 V1.0 2N5320 & 2N5322 Medium Power Transistors Absolute Maximum Ratings Description 2N5320 NPN 2N5322 PNP Symbol Collector Emitter Voltage , Test Condition Collector Emitter Voltage VCEO IC = 100mA, IB = 0 2N5320/2N5322 Collector
Multicomp
Original
2N532

2n5320 transistor

Abstract: 2N5320 DATA SHEET 2N5320 2N5322 2N5321 2N5323 NPN PNP COMPLEMENTARY SILICON SWITCHING , Resistance 2N5320 2N5322 100 100 75 6.0 2N5321 2N5323 75 75 50 5.0 2.0 1.0 10 UNITS V , ) IC=500mA, IB=50mA (2N5322) IC=500mA, IB=50mA (2N5323) VCE=4.0V, IC=500mA VCE=4.0V, IC=500mA VCE=2.0V, IC=1.0A VCE=4.0V, IC=50mA, f=10MHz 2N5320 2N5322 MIN MAX 0.5 0.1 100 75 6.0 0.5 0.7 , noted) 2N5320 2N5322 SYMBOL TEST CONDITIONS MIN MAX ton VCC=30V, IC=500mA, IB1=50mA (2N5320
Central Semiconductor
Original
2n5320 transistor transistor 2N5321 2N5320 SILICON

0057W

Abstract: BD PNP ·- . Higli-Speed Power Transistors File Number 325 2N5320, 2N5321, 2N5322, 2N5323 , iu m -P o w er Applications Features: , 2N5322 I p' N-p J 2N5320 2N5323 J Complements of: £ 2N5321 , -2N5320, 2N5321, 2N5322 and 2N5323 are doubled-diffused epitaxial-planar silicon power transistors intended for , , high-disslpation versions of the 2N2102 with all of the salient features of that device. The 2N5322 and 2N5323 , with all of its additional outstanding features. The 2N5320, 2N5321, 2N5322, and 2N5323 are supplied in
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OCR Scan
0057W BD PNP 92CS-1754T 92CS-I5004RI 92C5-I900 92CS-I5007RI

AN 5322

Abstract: 2N5322 2N5320 SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package Medium Power , Cut Off Current 2N5322 75 100 7 2N5321 50 75 5 Data Sheet MIN MAX UNITS 75 , SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package , =0.5A, VCE=4V 2N5320/5322 2N5321/5323 IC=500mA, IB=50mA 2N5320 2N5321 2N5322 2N5323 IC=500mA, VCE , 80 100 ns ns 800 ns 2N5322/5323 *VBE (on) V V V V 2N5320/5321 Base
Continental Device India
Original
AN 5322 PNP TO-39 ISO/TS16949 C-120 281102E

2N5322

Abstract: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION The 2N5322 , °C Storage and Junction temperature 2N5322 -100V -100V -75V -6V 2N5323 -75V -75V -50V -5V -2A -1A 1W 10W , . Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/99 2N5322 2N5323 , IE = 0 2N5322 IE Min. Typ. Max. Unit -0.5 -5 -0.1 -0.5 µA µA = 0 2N5323 = 0 2N5323
Semelab
Original

2N5322

Abstract: 2N5323 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N5322 2N5323 V CBO , 1 W 10 W -65 to 200 o C 1/4 2N5322/2N5323 THERMAL DATA R t hj-ca se R t , CBO Collector Cut-off Current (IE = 0) V CB = -80 V V CB = -60 V for 2N5322 for 2N5323
STMicroelectronics
Original

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 70w amplifier (2N6292 ) 40872 (2N6111) - 40594 (2N6320) 40595 (2N5322) 40 Quasi-Comp. 40636 (2N3055) - 40594 (2N5320) 40595 (2N5322) - 40999 (2N5415) 40999 (2N5415) 80 180W 120W Quasi-Comp. Paral. out. (4) 40983's (2N5240 , 2N5320 NPN Complement of 2N5322 75 90 100 30-130 500 4 0.5* - 80 0.5 500 50 1.1 500 2N5321 NPN , . 70-W Quasi-Comp. Univ. Amplifier 95 - 70-350 300 4 10* - 85 0.8 300 30 1.4 300 2N TYPES 2N5322 FAMILY [p-n-p] (silicon) fj = 50 MHz min; Pj = 10 max â'¢'CBO-jUA a|cer-ma 2N5322 PNP Complement of
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OCR Scan
2N5495 2N6269 2N5492 TA8323 2N6103 300W TRANSISTOR AUDIO AMPLIFIER 70w amplifier 40250 Transistor 40594 40629 Transistor 120w audio power amplifier circuit 2N6386 TA8201

bss17

Abstract: 2N5322/BSS17 2N5322/BSS17 2N 5323/BSS18 SILICON PLANAR PNP MEDIUM-POWER AMPLIFIERS The 2N 5322/BSS17 and 2N 5323/BSS18 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments. The complementary NPN types are respectively the 2N 5320 and 2N 5321. ABSOLUTE MAXIMUM RATINGS 2N 5322 2N 5323 VcBO Collector-base voltage (lE = 0) -100 V -75 V VcEV Collector-emitter voltage (VBE = 1.5V) -100 V
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2N5322/BSS17 bss17

bss17

Abstract: bsst7 (2N6292 ) 40872 (2N6111) - 40594 (2N6320) 40595 (2N5322) 40 Quasi-Comp. 40636 (2N3055) - 40594 (2N5320) 40595 (2N5322) - 40999 (2N5415) 40999 (2N5415) 80 180W 120W Quasi-Comp. Paral. out. (4) 40983's (2N5240 , 2N5320 NPN Complement of 2N5322 75 90 100 30-130 500 4 0.5* - 80 0.5 500 50 1.1 500 2N5321 NPN , . 70-W Quasi-Comp. Univ. Amplifier 95 - 70-350 300 4 10* - 85 0.8 300 30 1.4 300 2N TYPES 2N5322 FAMILY [p-n-p] (silicon) fj = 50 MHz min; Pj = 10 max â'¢'CBO-jUA a|cer-ma 2N5322 PNP Complement of
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OCR Scan
bsst7 5322 5323/BSSHI 5322/BSST7
Showing first 20 results.