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2N5306 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN visit Digikey Buy
2N5306 TIN/LEAD Central Semiconductor Corp TRANS NPN DARL 25V 0.3A TO-92 visit Digikey Buy

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Part : 2N5306 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1949 Price Each : $0.2129
Part : 2N5306 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 2,823 Best Price : $0.02 Price Each : $0.02
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2N5306 Datasheet

Part Manufacturer Description PDF Type
2N5306 Fairchild Semiconductor NPN Darlington Transistor Original
2N5306 Fairchild Semiconductor NPN Darlington Transistor Original
2N5306 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 25 MinV, TO-92, 3-Pin Scan
2N5306 Central Semiconductor Darlington Bipolar Transistor, NPN, 25V, TO-92, 3-Pin Scan
2N5306 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan
2N5306 Fairchild Semiconductor NPN Darlington Transistor Scan
2N5306 General Electric Semiconductor Data Handbook 1977 Scan
2N5306 General Electric Semiconductor Data Book 1971 Scan
2N5306 General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan
2N5306 Micro Electronics Semiconductor Device Data Book Scan
2N5306 Micro Electronics Semiconductor Devices Scan
2N5306 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5306 N/A Semiconductor Master Cross Reference Guide Scan
2N5306 N/A Shortform Transistor Datasheet Guide Scan
2N5306 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N5306 N/A Basic Transistor and Cross Reference Specification Scan
2N5306 N/A Transistor Shortform Datasheet & Cross References Scan
2N5306 N/A Basic Transistor and Cross Reference Specification Scan
2N5306 N/A Shortform Transistor PDF Datasheet Scan
2N5306 National Semiconductor NPN Transistors / DARLINGTON Scan
Showing first 20 results.

2N5306

Catalog Datasheet MFG & Type PDF Document Tags

2n5306

Abstract: 2N5306 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N5306 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N5306 at our online store! 2N5306 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5306 Information Did you Know , 2N5306 Specifications Military/High-Rel : N V(BR)CEO (V) : 25 V(BR)CBO (V) : 25 I(C) Max. (A) : 300m
American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

2N5306 equivalent

Abstract: ATI 200M 200mA, 200MA 2N5306 NPN 25 7K-70K 2mA, 5 1.4 200mA, 200M A 2N5306A NPN 25 7K-70K 2mA, 5 1.4 200mA , 2mA, 5 0.125 10mA, 1mA 150 2 360 2N5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 0.2mA 60 4 400 2N5306 NPN 25 , Silicon Transistors r^j 2N5305,6,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306 and 2N5306A are NPN, silicon, planar, epitaxial, passivated Darlington monolithic amplifiers. These , (Vcu â'" 5V, Ic â'" 2mA) 2N5305 (Von = 5V, Ic = 100mA) 2N5305 ( Vce = 5V, Ir = 2mA) 2N5306, A (Vck =
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OCR Scan
2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5306 equivalent ATI 200M D39C4 GES6220 2IM5172

2N5306

Abstract: 2N5306 equivalent 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for , Ambient © 1997 Fairchild Semiconductor Corporation Max Units 2N5306 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N5306 Discrete POWER & Signal Technologies (continued , 6.0 2N5306 NPN Darlington Transistor Fairchild Semiconductor
Fairchild Semiconductor
Original

2n5306

Abstract: SEMICONDUCTOR â  2N5306 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 , noted C haracteristic M ax Units 2N5306 R ojc Total Device Dissipation Derate above , Resistance, Junction to Ambient 200 °C/W Pd 1997 Fairchild Semiconductor Corporation 2N5306 , u ty C y c le < 2.0% 7,000 6.0 2N5306 NPN Darlington Transistor
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OCR Scan

2N5306

Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR 2N5306 2N5306 NPN Darlington Transistor · This device is designed for applications requiring extremely high current gain at currents to 1.0A. · Sourced from process 05. · See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless , Fairchild Semiconductor Corporation Rev. B1, July 2002 2N5306 Thermal Characteristics TA=25°C unless otherwise noted 2N5306 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15
Fairchild Semiconductor
Original
2N5306 FAIRCHILD SEMICONDUCTOR
Abstract: 2N5306 2N5306 NPN Darlington Transistor â'¢ This device is designed for applications requiring extremely high current gain at currents to 1.0A. â'¢ Sourced from process 05. â'¢ See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage Value 25 Units V V VCBO , 2N5306 Thermal Characteristics TA=25°C unless otherwise noted 2N5306 Package Dimensions TO Fairchild Semiconductor
Original

2N5306

Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR 2N5306 FAIRCHILD SEMICONDUCTOR ¡ m Discrete POW ER & Signal Technologies 2N5306 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol V cE O T A = 2 5°C unless o th e rw ise noted Parameter Collector-Emitter Voltage , Ambient Max 2N5306 625 5.0 8 3 .3 Units mW m W /°C °C/W °C/W R ojc R oja 200 < s) 1 9 9
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OCR Scan

2N5308

Abstract: 2N5306 Datasheet Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2im5306 2n5308 npn silicon darlington transistor jedec to-92 case (ecb) description The CENTRAL SEMICONDUCTOR 2N5306 , applications. MAXIMUM RATINGS (TA = 25°C) SYMBOL 2N5306 2N5308 UNITS Collector-Base Voltage , ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 2N5306 2N5308 SYMBOL TEST CONDITIONS MIN MAX
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OCR Scan
631 TO92 transistor 7k

2N5306

Abstract: F63TNR 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for , Ambient © 1997 Fairchild Semiconductor Corporation Max Units 2N5306 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N5306 Discrete POWER & Signal Technologies (continued , 6.0 2N5306 NPN Darlington Transistor TO-92 Tape and Reel Data TO-92 Packaging
Fairchild Semiconductor
Original
F63TNR PN2222N CBVK741B019

2N5305

Abstract: 2N5306 to-98 , GES5305 2,000 20,000 (lc = 100mA, VCE = 5V) 2N5305, GES5305 hFE 6,000 - (lc = 2 mA, VCE = 5 V) 2N5306, GES5306A 7,000 70,000 (lc = 100mA, VCE = 5V) 2N5306, GES5306A 20,000 - Collector-To-Emitter , , GES5305 hfe 2,000 - (VCE = 5V, ic = 2mA, f = 1 KHZ) 2N5306,6A, GES5306,6A 7,000 - - (VCE = 5V, lc = , 15.7kHz)2N5306A,GES5306A eft Typical 230 nVVHz TERMINAL CONNECTIONS TO-92 Package Lead 1 - Emitter Lead
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OCR Scan
2N5306 to-98 2n5306 GE 2N5305 to-98 TO-98 92CS-42629 S-42634 92CS-42636 2CS-4263I 92CS-42C30 92CS-4

D39C4

Abstract: ei50 r^j 2N5305,6,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306 and 2N5306A are , , BW â â  15.7KHZ, f = 10Hz to 15. /UH; 2N5306A NPN 25 7K-70K 2mA, 5 5.0 VCE 5V, c ~ 600M A, Rs = , . VCE (V) Max. C s 'c- >B 2N5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA 2N5306 NPN 25 7K-70K 2mA, 5 1.4 200mA, 200M A 2N5306A NPN 25 7K-70K 2mA, 5 1.4 200mA, 200M A 2N5307 NPN 40 2K-20K 2mA , (Vcu â'" 5V, Ic â'" 2mA) 2N5305 (Von = 5V, Ic = 100mA) 2N5305 ( Vce = 5V, Ir = 2mA) 2N5306, A (Vck =
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OCR Scan
2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A ei50 quan-tech D38S7

2N5306

Abstract: MPSA14 Discrete POWER & Signal PAiRCH I L.P Technologies SEMICONDUCTOR ¡m 2N5306 C ^ TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VcEO Collector-Emitter Voltage 25 V VcBO , Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5306 Pd Total Device
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OCR Scan

2N5305

Abstract: 53-06A b v Cb o _ _ 20,000 70,000 - V b v ebo 2N 5305, G ES5305 2N5305, GES5305 2N5306, G ES5306A 2N5306, G ES5306A VCE(sat) V BE(sat) hFE 6,000 7,000 20,000 - i ! C ollector-To-Em
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OCR Scan
53-06A 92CS-4263Q 92CS-4263S S-42S27 10--T

2N3417 equivalent

Abstract: 2N2221-2N2222 2N5306 7-70 25 1.4 400 ' 3.5 60 High input Impedanceâ'"typically 650K ohmsâ'"Ideal for low level, feign gain, low noise amplifier applicative. "A'1 versions feature guaranteed wideband 40.78 2N5306A , 2N5306 M73P-X5C2 NPN darlington chip for preamp input stages. 10 35.95 2N5814 M86PX503 NPN chip for
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OCR Scan
2N6006 2N3856A 2N3417 equivalent 2N2221-2N2222 transistor 2n5174 IC TC 3588 2N2222A npn transistor beta transistor 2N2222 GET706 GET708 GET914 GET3013 GET3646 GE1705

2N5133

Abstract: 2N5121 2N5039 2N5298 2N5671 2N5040 2N5304 2N5672 2N5041 2N5305 2N5683 2N5090 2N5306 2N5684 2N5108 2N5307
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OCR Scan
2N5021 2N6081 2N6178 2N5121 2N6179 2N6180 2N5133 2N5130 2n5134 2N5006 2N5190 2N5432 2N5007 2N5191 2N5433

D39C4

Abstract: GES6220 200mA, 200MA 2N5306 NPN 25 7K-70K 2mA, 5 1.4 200mA, 200M A 2N5306A NPN 25 7K-70K 2mA, 5 1.4 200mA , 2mA, 5 0.125 10mA, 1mA 150 2 360 2N5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 0.2mA 60 4 400 2N5306 NPN 25
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OCR Scan
2N5249A 2N5175 2N5310 100-J01 2N5311 2N5354 2N5355
Abstract: Small Signal Darlington Transistors Part No. Polarity VCEO (V) 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 NPN PNP hFE @ VCE & IC IC (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K 10K 14K 20K 20K 10K 50K 70K 20K 70K 140K - VCE(sat) @ IC VCE IC Max. IC (V) (mA) (V) (mA) 5 5 5 5 5 5 5 5 5 5 - 2 2 2 10 100 100 500 10 Taitron Components
Original

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 preamp and small signal amplifier. 5 35.78 2N5306 M73P-X5C2 NPN darlington chip for preamp input stages
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OCR Scan
M46P-X507 1N3605 M26P-X505 2N2714 2N3976 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 1N3605 equivalent 2n2222 npn transistor general purpose 1N914 1N914A 1N914B M46P-X510 1N3064

2N4424

Abstract: D39C4 200mA, 200mA 2N5306 NPN 25 7K-70K 2mA, 5 1.4 200mA, 200m A 2N5306A NPN 25 7K-70K 2mA, 5 1.4 200mA , 2mA, 5 0.125 10mA, 1mA 150 2 360 2N5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 0.2mA 60 4 400 2N5306 NPN 25
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OCR Scan
2181M monolithic amplifiers 2N5356 2N5365 2N5366 2N5418 2N5419 2283/2181M

TO-98

Abstract: transistor MPSA06 200 40 50-1 50 TO-92 2N3904 200 40 100-300 TO-92 â'¢ 2N5305 300 25 2K-20K TO-98 â'¢ 2N5306 300 25 , TO-92 â'¢ 2N5306A 300 40 7K-70K TO-98 â'¢ 2N5307 300 40 2K-20K TO-98 â'¢ 2N5308 300 40 7K-70K TO-98 â
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OCR Scan
2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 transistor MPSA06 transistor 2n3903 2N3904 TO-92 type NPN Transistor TO92 2N4124 transistor 2n2924 transistor

BC200G

Abstract: MT4102 2N5305 N TO-92B 600 300 25 2K 20K 2 5 1.4 200 60 10 _ - 2N5306 N TO-92B 600 300 25 7K 70K 2 5 1.4 200 60
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OCR Scan
BC146 BC146R BC146Y BC146G BC200 BC200R BC200G MT4102 SO 42 P BCW83 MPSD54 MT-42 30-15K

beta transistor 2N2222

Abstract: 2N2924 equivalent NPN chip for low noise preamp and small signal amplifier. 5 35.78 2N5306 M73P-X5C2 NPN darlington
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OCR Scan
2N3391 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 2n3390 equivalent 2N2905 2N2219 2N2711 2N2712 2N2713 2N3392 2N3393
Showing first 20 results.