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2N5302 Datasheet

Part Manufacturer Description PDF Type
2N5302 Microsemi NPN Transistor Original
2N5302 Motorola 30A NPN SILICON POWER TRANSISTOR 60V 200W Original
2N5302 On Semiconductor High-Power NPN Silicon Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original
2N5302 On Semiconductor High-Power NPN Silicon Transistor Original
2N5302 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original
2N5302 Wing Shing Computer Components NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original
2N5302 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N5302 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan
2N5302 Diode Transistor Transistor Short Form Data Scan
2N5302 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N5302 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N5302 General Diode Transistor Selection Guide Scan
2N5302 General Electric High current, high power, high speed N-P-N power transistor. 60V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan
2N5302 General Transistor Power Transistor Selection Guide Scan
2N5302 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan
2N5302 Mospec NPN Silicon High-Power Transistor Scan
2N5302 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N5302 Motorola The European Selection Data Book 1976 Scan
2N5302 Motorola European Master Selection Guide 1986 Scan
2N5302 Motorola Power Transistor Selection Guide Scan
Showing first 20 results.

2N5302

Catalog Datasheet MFG & Type PDF Document Tags

2N5302

Abstract: 2N5303 Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 , . Max. Unit 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 5.0 , 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N5302, 2N5303 JAN SERIES , , VCE = 2.0 Vdc All Types IC = 15 Adc, VCE = 2.0 Vdc 2N5302 IC = 10 Adc, VCE = 2.0 Vdc 2N5303 IC =
Microsemi
Original
1000C 2n5302 transistor 2N5302 JANTXV TRANSISTOR 2n5302 MIL-PRF-19500/456

2N5302

Abstract: 2N5303 TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF , 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc , 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 5.0 µAdc OFF , / (978) Fax: (978) 689-0803 Vdc 03/98 REV: C Page 1 of 2 2N5302, 2N5303 JAN SERIES
New England Semiconductor
Original
jantx 2n5302 adc ic

2N5303

Abstract: 2n5302 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E .FO R U SE IN P , S a tu ra tio n V o lta g e ' C E ( s a t) = 0.75 Vdc (Max) @ Ic = lOAdc (2N5301, 2N5302) 1.0 Vdc , , Junction to Case Therm al Resistance, Junction to Case 40 40 30 2N5302 60 60 30 7.5 200 1.14 -65 to +200 , / FAX: (978)689-0803 T4-4.8-860-326 REV: - 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS (Tc = 25 , 2N5301 2N5302 2N5303 I c eo 40 60 80 5.0 5.0 5.0 IcEX Collector Cutoff Current VCE = 40 Vdc, IR =
-
OCR Scan
2N530I 2N5302 EB 2N4398 2N4399 2N5745

2N5302

Abstract: 2N5303 , HIGH-POWER, TYPES 2N5302 AND 2N5303, JAN, JANTX, JANTXV, AND JANS This specification is approved for use , W 2N5302 2N5303 PT (1) TA = +25C W V dc V dc V dc A dc A dc C C/W Max , = 15 A dc IB = 1.5 A dc VCB = 10 V dc IE = 0 100 kHz f 1 MHz ton toff 2N5302 2N5303 Pulse response V dc Min Max 15 60 2N5303 V dc 2N5302 V dc 2N5303 V dc pF s s 2 40 15 60 2N5302 V dc 1.8 2 1 1.5 800 1.1 3.0 (1
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Original
MIL-PRF-19500/456E MIL-PRF-19500/456D MIL-PRF-19500

2n5302

Abstract: 2N5301 2N53022N53031.0 2.0 3.0 5.0 10 20 I H k lK I iM Ik ' 30 50 100 V c e , COLLECTOR-EMITTER VOLTAGE (VOLTS , ) = °-75 Vd0 (Max) @ lc = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ lc = 10 Ade (2N5303) · Excellent , 30 2N5302 60 60 30 7.5 200 1.14 -6 5 t o +200 2N5303 80 80 20 Unit Vdc Vdc Ade Ade Watts W , Sustaining Voltage (Note 1) (1C - 200 mAdc, Ib - 0) VCEO(sus) 2N5301 2N5302 2N5303 'CEO 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 ICBO 2N5301 2N5302 2N5303 'EBO 40 60 60 Symbol Min
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OCR Scan
Motorola transistor 358 motorola 2n5303 358 motorola 2N4399 pnp 2NS301 2NS302 2NS303

2n5302

Abstract: 2n5301 Saturation Voltage - = ° '75 Vdc < Max) @ 'C = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ lc = 10 Ade (2N5303 , 'c Iß Pd 2N5301 40 40 30 2N5302 60 60 30 7.5 200 1.14 - 6 5 t o +200 2N5303 80 80 20 , , Inc. 1995 (M) MOTOROLA \ 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS (T q = 2 5 °C , Voltage (Note 1) (Iq = 200 mAdc, lg = 0) Symbol Min Max Unit VCEO(sus) 2N5301 2N5302 2N5303 ICEO 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 ICBO 2N5301 2N5302 2N5303
-
OCR Scan
200WATT 2N5301/D 2N530

2N5302

Abstract: 2N5303 Collector-Emitter Saturation Voltage - vCE(«at)= 0 75 v (Max) @ lc = 10 A - 2N5301, 2N5302 vCH«at) = 1 0 V (Max , Characteristic Symbol 2N5301 2N5302 2N5303 Unit Collector-Emitter Voltage vCBO 40 60 80 V Collector-Emitter , \ 25 50 75 100 125 150 175 200 T c , TEMPERATURE)0 C) NPN 2N5301 2N5302 2N5303 20 AND 30 AMPERE NPN , G 1.38 1.62 H 29.90 30.40 1 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N5301, 2N5302, 2N5303 NPN , mA, lB = 0 ) 2N5301 2N5302 2N5303 ^CEO(SUS) 40 60 80 V Collector Cutoff Current ( VCE = 40 V, lB =
-
OCR Scan
N5303
Abstract: Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 , . Max. Unit 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 , 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N5302, 2N5303 JAN SERIES , , VCE = 2.0 Vdc All Types IC = 15 Adc, VCE = 2.0 Vdc 2N5302 IC = 10 Adc, VCE = 2.0 Vdc 2N5303 IC = Microsemi
Original
MIL-PRF-19500/

2N5302

Abstract: 2N5303 , SILICON, HIGH-POWER TYPE 2N5302 and 2N5303, JAN, JANTX, JANTXV, AND JANS This specification is approved , 7.5 30 20 -65 to +200 -65 to +200 0.875 0.875 2N5302 2N5303 1/ Derate linearly , IC = 1 A dc f = 1 MHz IB = 1.5 A dc IB = 1.5 A dc IE = 0 100 kHz f 1 MHz 2N5302 2N5303 V dc Min Max Pulse response 15 60 15 60 2N5302 V dc 2 40 1.8 2N5303 2N5302 2N5303 V dc V dc V dc 2 1 1.5 ton toff pF µs µs 800 1.1 3.0
-
Original
MIL-PRF19500 MIL-S-19500/456C

2N5301

Abstract: 2N5302 ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use , ) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302) 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) Excellent , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 , = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 5.0 , 2.0 2.0 3.0 - - - - - ALL TYPES 2N5301, 2N5302 2N5303 2N5301, 2N5302 2N5303 -
ON Semiconductor
Original
Abstract: 2N5302 High-Power NPN Silicon Transistor · ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎ ÎÎ , 2N5302 60 60 30 Unit Vdc Vdc Adc Adc Collector Current - Continuous (Note 1) Base Current 7.5 Total , 2N5302 AYYWW TA TC 8.0 200 PD, POWER DISSIPATION (WATTS) A YY WW = Location Code = Year = Work Week , 2.0 50 2N5302 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 160 180 , 1 December, 2004 - Rev. 1 Publication Order Number: 2N5302/D ON Semiconductor
Original
2N5302/D
Abstract: storage-time (b) measurements fo r 2NS301 , 2N5302. and 2NS303. 2-40 HAS , File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ] > High-Current , capability POWER TRANSISTORS JEDEC TO-204AA The 2N5301, 2N5302 and 2N5303 are epitaxial-base , . 2N5302 60 60 2N5303 80 80 5 30 50 7.5 15 V V V A A A A * Pt AtTc < 2 , HARRIS SEMICOND SECTOR SbE D â  43D2271 OOMOMbO DTT « H A S 2N5301, 2N5302, 2N5303 -
OCR Scan
TQ-204AA 9C-99 004D4

2N5301

Abstract: 2N5302 SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power , VCBO Collector-base voltage 2N5302 VALUE 40 Open emitter 60 2N5303 Collector-emitter voltage 40 2N5302 Open base 2N5303 VEBO V 80 2N5301 VCEO UNIT , SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors , ) Collector-emitter sustaining voltage 2N5302 2N5301/5302 Collector-emitter saturation voltage VCEsat
-
Original
2n53 2N4398/4399/5745

2N5301

Abstract: 2N5303 5 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 1969 - REVISED OCTOBER 1984 , Collector Current (2N5301, 2N5302) 20 A Continuous Collector Current (2N5303) 50 A Peak Collector Current , temperature (unless otherwise noted) 2N5301 2N5302 2N6303 'Collector-base voltage 40 V 60 V 80 V , ~70PTÃ">-62C 36594 D T" 33-/S- 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS 2N5301 2N5302
-
OCR Scan
9S1726 7S265

2N5301

Abstract: 2N5303 Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power , 2N5302 NG S HA 2N5303 VCEO VEBO OND MIC E 2N5301 Collector-base voltage INC Collector-emitter voltage TOR UC CONDITIONS 2N5301 2N5302 Open emitter Open base 2N5303 , 2N5302 2N5303 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5301 VCEO(SUS) Collector-emitter sustaining voltage 2N5302 VCEsat
-
Original
53-02V 2N5302 data sheet 2N5302 inchange
Abstract: Vdc (Max) @ lc = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ Iq = 10 Ade (2N5303) Excellent Safe , 2N5745 â'˜ MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 , Derating Curve >M otorola, Inc. 1995 fM) MOTOROLA 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS , ) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, lB = 0) (V q e = 60 Vdc, I b = 0) (V q e = 80 Vdc, lg = 0) 40 60 80 'CEO 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 -
OCR Scan

TRANSISTOR 2n5302

Abstract: 2N5302 ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power , VCEO Collector­Emitter Voltage 2N5302 60 Vdc Collector Current ­ Continuous IC 30 , © Semiconductor Components Industries, LLC, 2001 May, 2001 ­ Rev. 0 1 Publication Order Number: 2N5302/D , noted) 2N5302 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2N5302 1.0 0.7 0.5 , , CAPACITANCE (pF) 20 dc TJ = 25°C 1000 Cib 500 200 2N5302 0.2 0.1 1.0 50 2.0 3.0 5.0
ON Semiconductor
Original

2N5301

Abstract: 2N5302 Power Transistors_ 2N5301, 2N5302, 2N5303 File Number 1029 High-Current High-Power High-Speed N-P-N , capability TERMINAL DESIGNATIONS JEDEC TO-2Q4AA The RCA-2N5301, 2N5302 and 2N5303 are epitaxial-base , . MAXIMUM RATINGS, Absolute-Maximum Values: 2N5301 2N5302 2N5303 â'¢ VCBO , 2N5301, 2N5302, 2N5303 ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) =2S°C unless otherwise , 2N5301 2N5302 2N5303 VCE VBE 'c >B Min. Max. Min. Max. Min. Max. 40a _ 1 _ - _ - 'CBO 60a
-
OCR Scan
DD173 2NB301

2N5302

Abstract: 2N5302G 2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power , Cycle 10%. 2N5302G AYYWW MEX PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 2N5302 G A YY WW MEX 0 20 40 60 80 100 , Temperature Derating Curve 2N5302 *For additional information on our Pb-Free strategy and soldering , = Pb-Free Package = Location Code = Year = Work Week = Country of Origin 2N5302G Package
ON Semiconductor
Original
MS5302
Abstract: 2N5302 Highâ'Power NPN Silicon Transistor Highâ'power NPN silicon transistors are for use in , : Pulse Width = 5 ms, Duty Cycle ≤ 10%. 2N5302G AYYWW MEX PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 2N5302 G A YY WW MEX 0 20 , Figure 1. Power Temperature Derating Curve 2N5302 *For additional information on our Pbâ'Free , 2N5302G Package Shipping TOâ'204 100 Units/Tray TOâ'204 (Pbâ'Free) 100 Units/Tray ON Semiconductor
Original

2N5301

Abstract: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 3 J CD H FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 2N5301, 2N5302 DESIGNED FOR COMPLEMENTARY USE WITH 2N4398 , Current (2N5301, 2N5302) 20-A Rated Continuous Collector Current (2NS303) Min fT of 2 MHz at 10 V, 1 A , H E S absolute maximum ratings at 25cC case temperature (unless otherwise noted) 2N5301 2N5302 , fc · 1 5.2ii TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS `
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OCR Scan
1EA05
Abstract: 2N5301, 2N5302, 2N5303 File Number 1029 High-Current High-Power High-Speed N-P-N Power , dis s ip a tio n c a p a b ility TERMINAL DESIGNATIONS JEDEC TQ-204AA The RCA-2N5301, 2N5302 , General-Purpose Power Transistors 2N5301, 2N5302, 2N5303 ELECTRICAL CHARACTERISTICS, at , _ 3 1.7 1.8 2.5 - _ _ _ - 10 0.75 2 - 3 _ 60 Max. 1 1 10 5 5 LIMITS 2N5302 Min. Max. 40 15 _ 5 60 , . 01E 17386 D General-Purpose Power Transistors 2N5301, 2N5302, 2N5303 ·1 0 * · -
OCR Scan
0G173 2N53Q1 00173A7 2N53Q2

fu 5303

Abstract: 4410b File Num ber 1029 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power T , DESIGNATIONS JEDEC TO-204AA The 2N5301, 2N5302 and 2N5303 are epitaxial-base silicon fi-p-n transistors , JS-6 RDF-2230 2-37 POWER TRANSISTORS 2N5301, 2N5302, 2N5303 ELECTRICAL CHARACTERISTICS , CURRENT Adc ·c *B 2N5301 Min. - LIMITS 2N5302 Min. Max. - 2N5303 Min. - UNITS Max. 1 1 10 5 , .8 % 2-38 2N5301, 2N5302, 2N5303 9 2 C S -2 9 7 9 7 Fig. 1 - M a xim um op e ra
-
OCR Scan
fu 5303 4410b 92CS-29600 92CS-Z9802
Showing first 20 results.