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2N5087 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN visit Digikey
2N5087 LEAD FREE Central Semiconductor Corp TRANS PNP 50V 0.05A TO-92 visit Digikey
CP788X-2N5087-CT Central Semiconductor Corp TRANS PNP LNA CHIP FORM visit Digikey
CP788X-2N5087-CT20 Central Semiconductor Corp TRANS PNP 1=20PCS visit Digikey

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Part : 2N5087RLRA Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,000 Best Price : $0.04 Price Each : $0.05
Part : 2N5087RLRAG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 1,382,897 Best Price : $0.04 Price Each : $0.05
Part : 2N5087 Supplier : - Manufacturer : Bristol Electronics Stock : 740 Best Price : $0.0562 Price Each : $0.1875
Part : 2N5087 Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 59,000 Best Price : $0.0253 Price Each : $0.1875
Part : 2N5087 Supplier : National Semiconductor Manufacturer : Bristol Electronics Stock : 10,299 Best Price : $0.0281 Price Each : $0.1875
Part : 2N5087TFR Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 1,783 Best Price : - Price Each : -
Part : 2N5087 Supplier : - Manufacturer : Chip One Exchange Stock : 460 Best Price : - Price Each : -
Part : 2N5087G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.0645 Price Each : £0.1630
Part : 2N5087 Supplier : National Semiconductor Manufacturer : New Advantage Stock : 364 Best Price : - Price Each : -
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2N5087 Datasheet

Part Manufacturer Description PDF Type
2N5087 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original
2N5087 Fairchild Semiconductor PNP General Purpose Amplifier Original
2N5087 Fairchild Semiconductor PNP General Purpose Amplifier Original
2N5087 Fairchild Semiconductor PNP General Purpose Amplifier Original
2N5087 Motorola CASE 29.04, STYLE 1 TO-92 (TO-226AA) Original
2N5087 On Semiconductor TRANS GP BJT PNP 50V 0.05A 3TO-92 Original
2N5087 On Semiconductor Amplifier Transistor PNP Silicon Original
2N5087 Philips Semiconductors Small-signal Transistors Original
2N5087 Philips Semiconductors PNP general purpose transistor Original
2N5087 ROHM General Purpose Bipolar Transistor, PNP, 50V, TO-92, 3-Pin Original
2N5087 Siemens Cross Reference Guide 1998 Original
2N5087 Sinyork Mini size of Discrete semiconductor elements Original
2N5087 Allegro MicroSystems General Purpose Bipolar Transistor, PNP, 50 MinV, TO-92, 3-Pin Scan
2N5087 Central Semiconductor Various Transistors Scan
2N5087 Central Semiconductor Transistor Selection Guide Scan
2N5087 Continental Device India Semiconductor Device Data Book 1996 Scan
2N5087 Crimson Semiconductor Transistor Selection Guide Scan
2N5087 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N5087 Ferranti Semiconductors E-Line Transistors 1977 Scan
2N5087 Ferranti Semiconductors Quick Reference Guide 1985 Scan
Showing first 20 results.

2N5087

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N5087 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N5087 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N5087 at our online store! 2N5087 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5087 Information Did you Know , Search for Parts Request a Quote Test Houses 2N5087 Specifications Military/High-Rel : N V(BR)CEO (V American Microsemiconductor
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motorola rectifier catalog transistors catalog STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 FAIR CHILD S E M IC O N D U C T O R tm Discrete POW ER & Signal Technologies 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 M a rk : 2P/2Q PNP , 0.06." à 1997 Fairchild SemiconductorCorporation 2N5086 / MMBT5086 / 2N5087 / MMBT5087 PNP , E = 5.0 V 10 mA, VC E = 5.0 V = = 2N5086 2N5087 2N5086 2N5087 2N5086 2N5087 150 250 150 , = 3.0 k£2, f = 1.0 kHz lc = 20 nA, VC E = 5.0 V, Rs = 10 k£2, f = 10 Hz to 15.7 kHz 2N5086 2N5087 -
OCR Scan
BT5086 2N5087 equivalent BT5087
Abstract: RqJC 83.3 °C/W 2N 5087 YWW 2N5087 = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device 2N5087 2N5087G 2N5087RLRA Package Shipping TO-92 5000 Units/Bulk TO , 2N5087 Preferred Device Amplifier Transistor PNP Silicon Features · Pb-Free Package is , Components Industries, LLC, 2004 February, 2004 - Rev. 2 1 Publication Order Number: 2N5087/D 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min ON Semiconductor
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BRD8011/D 2N5087/D
Abstract: 2N5086/MMBT5086/2N5087/MMBT5087 a National Semiconductor 2N5086 2N5087 MMBT5086 MMBT5087 T O -9 2 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP General Purpose Amplifier Electrical , ) Base-Emitter On Voltage (lc = 1.0 mAdc, VCE = 5.0 Vdc) 2N5086 2N5087 2N5086 2N5087 2N5086 2N5087 150 250 150 250 150 250 500 800 0.3 Vdc Vdc 0.85 10-40 2N5086/MMBT5086/2N5087/MMBT5087 , = 3.0 k il, f = 1.0 kHz) 2N5086 2N50B7 2N5086 2N5087 2N5086 2N5087 40 4.0 MHz pF 150 250 -
OCR Scan
2N50B 2N5087 NATIONAL SEMICONDUCTOR 2N5086/MMBT5086/2N5087/MMBT5087
Abstract: PLANAR EPITAXIAL TRANSISTORS 2N5086 2N5087 TO-92 Plastic Package E BC Amplifier , 50 10 50 50 VCE=5V, IC=100uA 2N5086 2N5087 150 250 VCE=5V, IC=1mA 2N5086 2N5087 , VCE (sat) *VCE=5V, IC=10mA 2N5086 2N5087 IC=10mA, IB=1mA Base Emitter On Voltage VBE (on , PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N5086 2N5087 TO-92 Plastic Package E BC , =5V, f=1KHz 2N5086 2N5087 VCE =5V, IC=20uA, RS=10k, f=10 Hz to 15.7 KHz 2N5086 2N5087 VCE =5V, IC Continental Device India
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TRANSISTOR BC 157 C-120 5087R 171103E
Abstract: SEMICONDUCTOR tm 2N5086 2N5087 MMBT5086 MMBT5087 Mark: 2 P / 2 Q PNP General , SemiconductorCorporation 2N5086 / MMBT5086 / 2N5087 / MMBT5087 Discrete POWER & Signal Technologies FAIRCHILD , ) Base-Emitter On Voltage lc = 10 m A , lB = 1 .0 m A , VC = E 2N5086 2N5087 2N5086 2N5087 2N5086 2N5087 150 500 250 800 150 250 150 250 0 .3 5 .0 V V 0 .8 , 10 Hz to 15.7 kHz 2N5086 2N5087 2N5086 2N5087 2N5086 2N5087 40 MHz 4.0 150 250 -
OCR Scan
Abstract: Transistors PNP Silicon 2N5086 2N5087* *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 , Diodes Device Data © Motorola, Inc. 1996 1 2N5086 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25 , Gain (IC = 100 uAdc, VCE = 5.0 Vdc) hFE 2N5086 2N5087 2N5086 2N5087 2N5086 2N5087 VCE(sat) VBE(on) 150 , 1.0 kHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2N5086 2N5087 NF 2N5086 2N5087 2N5086 2N5087 - - - - 3.0 2.0 3.0 2.0 fT Ccb hfe 150 250 600 900 dB 40 - - 4.0 MHz pF - 2 Motorola Motorola
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2N5086/D 226AA
Abstract: 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 B SOT-23 E Mark: 2P / 2Q , mW /°C °C/W °C/W 2N5086 / MMBT5086 / 2N5087 / MMBT5087 Discrete POWER & Signal Technologies , 2N5087 2N5086 2N5087 2N5086 2N5087 150 250 150 250 150 250 500 800 VCE(sat , = 1.0 kHz IC = 100 uA, VCE = 5.0 V, RS = 3.0 k, f = 1.0 kHz 2N5086 2N5087 2N5086 2N5087 IC = 20 uA, VCE = 5.0 V, RS = 10 k, f = 10 Hz to 15.7 kHz 2N5086 2N5087 40 MHz 4.0 Fairchild Semiconductor
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2n5087 fairchild fairchild 741
Abstract: 2N5086 / MMBT5086 1 2N5087 I MMBT5087 National f i Semiconductor" Discrete POWER & Sign al Technologies 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose , OOMOb^O 5-96 2N5086 I MMBT5086 / 2N5087 / MMBT5087 PNP General Purpose Am plifier (continued , 2NS086 2NS087 2N5086 2N5087 2N5086 2NS087 150 250 150 250 150 250 500 800 V cE(sat) Vße(on , = 20 pA, Vce = 5.0 V, Rs = 10 k ii, f= 10 Hz to 15.7 kHz 2N5086 2N5087 2N5086 2N5087 2N5086 -
OCR Scan
S0113D LS01130 SD113D
Abstract: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N5086 / 2N5087 , -VCE=5V, -IC= 10mA Symbol ST 2N5086 ST 2N5087 ST 2N5086 ST 2N5087 ST 2N5086 ST 2N5087 , Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N5086 / 2N5087 SEMTECH ELECTRONICS , Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N5086 / 2N5087 SEMTECH ELECTRONICS LTD Semtech Electronics
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2N5088 2N5089 transistor 2N5086 2n5088 transistor 2N5088 equivalent Semtech Electronics
Abstract: 2N5086 2N5087* M A XIM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage , 100 ¿¿Adc, V ce = 5.0 Vdc) hFE 2 N5086 2N5087 2N5086 2N5087 2N5086 2 N5087 v CE(sat) v BE{on) 150 250 , fj 40 - 4.0 MHz pF Ccb hfe 2N5086 2N5087 NF 2N5086 2N5087 2N5086 2N5087 150 250 600 , , FETs and Diodes Device Data 2 -3 7 b3b725M 01 03330 4Ö7 2N5086 2N5087 TYPICAL NOISE , I b3b?S54 010333^ 313 2N5086 2N5087 T Y P IC A L STA TIC C H A R A C TER ISTIC S FIGURE 6 - DC -
OCR Scan
T0-92 MPS3905 01Q3342
Abstract: Transistors 2N5086 2N5087* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , , FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N5086 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N5086 2N5087 150 250 500 800 (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5086 2N5087 150 250 - - (IC = 10 mAdc, VCE = 5.0 Vdc)(1) 2N5086 2N5087 150 250 - - Characteristic Unit ON Motorola
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2n5087 motorola MPS3906
Abstract: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5086 / 2N5087 , -VCE=5V, -IC= 10mA Symbol ST 2N5086 ST 2N5087 ST 2N5086 ST 2N5087 ST 2N5086 ST 2N5087 , Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5086 / 2N5087 SEMTECH ELECTRONICS , Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5086 / 2N5087 SEMTECH ELECTRONICS LTD Semtech Electronics
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5087/D Amplifier Transistor PNP , . (Replaces 2N5086/D) © Motorola, Inc. 1997 (M) MOTOROL A 2N5087 ELECTRICAL CHARACTERISTICS (Ta = 25 , Diodes Device Data TYPICAL NOISE CHARACTERISTICS (Vqe = -5.0 Vdc, Ta = 25°C) 2N5087 C3 < a2 O 10 7.0 5.0 , Diodes Device Data 2N5087 TYPICAL STATIC CHARACTERISTICS lC, COLLECTOR CURRENT (mA) Figure 6. DC Current , Diodes Device Data 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 10 7.0 5.0 -
OCR Scan
AN-569
Abstract: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2N5086 / 2N5087 , ST 2N5087 hFE 200 - 800 - ST 2N5086 hFE 150 - - - ST 2N5087 hFE 200 - - - ST 2N5086 hFE 150 - - - ST 2N5087 hFE 200 - Semtech Electronics
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hFE-200 to-92 npn hFE-200 transistor PNP hFE-200
Abstract: ON Semiconductort Amplifier Transistor 2N5087 PNP Silicon ON Semiconductor Preferred , November, 2001 ­ Rev. 1 Publication Order Number: 2N5087/D 2N5087 ELECTRICAL CHARACTERISTICS (TA = , ) Figure 2. Noise Current http://onsemi.com 2 5.0k 10k 2N5087 NOISE FIGURE CONTOURS 1.0M , (uA) Figure 5. Wideband http://onsemi.com 3 2N5087 TYPICAL STATIC CHARACTERISTICS h FE , Coefficients http://onsemi.com 4 50 100 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 ON Semiconductor
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transistor 2N5087
Abstract: 2N5087BU 2N5087TA 2N5087TAR 2N5087TF 2N5087TFR 2N5087_J18Z 2N5087_J61Z back to top © 2007 Fairchild , Line 3: 5087 2N5087_J18Z Full Production N/A TO-92 3 BULK 2N5087_J61Z Full , 2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier · This device is , ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 , 2N5086 2N5087 625 5.0 83.3 200 357 *MMBT5087 350 2.8 Units mW mW/°C °C/W °C/W * Device mounted on FR Fairchild Semiconductor
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2N5086/2N5087/MMBT5087 100KH
Abstract: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary , the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 2N5086 / 2N5087 , ST 2N5087 hFE 200 - 800 - ST 2N5086 hFE 150 - - - ST 2N5087 hFE 200 - - - ST 2N5086 hFE 150 - - - ST 2N5087 hFE 200 - Semtech Electronics
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ST transistor hFE-150
Abstract: nA DC Current Gain hfe :2N5086 Vce=-5V, Ic=-100hA 150 500 2N5087 250 800 2N5086 VCe=-5V, lo = â'" 1 mA 150 2N5087 250 2N5086 "Vce=-5V, lc = â'" 1 0mA 150 2N5087 250 , =-20MA Rs= 1 0KÃ) f=10Hz to 15.7KHZ 2N5086 3 dB 2N5087 Vce=-5V, lc=-100^A Rs=3Kil, f= 1 KHz 2 dB 2N5086 3 dB 2N5087 2 dB 'Pulse Test: Pulse Width -
OCR Scan
transistor t5b 5087 transistor 2N5086/5087 0D25D3
Abstract: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 E , Characteristic 2N5086 2N5087 625 5.0 83.3 200 Max *MMBT5086 *MMBT5087 350 2.8 357 Units PD RJC RJA , Fairchild Semiconductor Corporation 3-112 2N5086 / MMBT5086 / 2N5087 / MMBT5087 PNP General , =.2861 Vje=.75 Tr=10.1n Tf=467.8p Itf=.17 Vtf=5 Xtf=8 Rb=10) 3-113 2N5086 / MMBT5086 / 2N5087 , 8 12 16 REVERSE BIAS VOLTAGE (V) 20 3-114 2N5086 / MMBT5086 / 2N5087 / MMBT5087 PNP Fairchild Semiconductor
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BF254
Abstract: 2N5086 2N5087* M A X IM U M RATINGS Rating C o lluctor-E m itter Voltage Collector-Base Voltage E , 2N5087 2N5086 2N5087 2 N 5086 2 N 5087 v CElsat) v BE(on) 150 250 150 250 150 250 - - - 0 .3 - 0 .8 5 , 1.0 kHz) (2) F'ulse Test: Pulse W idth 2N5086 2N5087 40 _ MHz *-cb hfe _ 150 250 , 2N5086 2N5087 _ _ ` 5.0 Vdc, Rg = 3.0 k ohm s, 300 /¿s, D uty Cycle «; 2.0°o. MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-37 2N5086, 2N5087 TYPICAL NOISE CHARACTERISTICS (V c e = - 5 -
OCR Scan
T-150
Abstract: 2N5087 Preferred Device Amplifier Transistor PNP Silicon Features â'¢ Pbâ'Free Packages , ) 2000/T ape & Reel Device 2N5087 â' For information on tape and reel specifications, including , recommended choices for future use and best overall value. Publication Order Number: 2N5087/D 2N5087 , ://onsemi.com 2 dB 2N5087 TYPICAL NOISE CHARACTERISTICS (VCE = â'5.0 Vdc, TA = 25°C) 1.0 7.0 5.0 , 1.0 k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband http://onsemi.com 3 2N5087 TYPICAL ON Semiconductor
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Abstract: Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 Max. Symbol Parameter 2N5086 2N5087 625 5.0 PD Total Device Dissipation Derate above 25 , , September 2003 2N5086/2N5087/MMBT5087 Thermal Characteristics Ta=25°C unless otherwise noted 2N5086/2N5087/MMBT5087 VCESAT - COLLECTOR EMITTER VOLTAGE (V) h F E- TYPICAL PULSED CURRENT GAIN , . Equivalent Input Noise Voltage vs Collector Current Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Fairchild Semiconductor
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Abstract: 2N3904 PN4275 2N5087 2N5087 MPS6515 2N3859A MPS6518 PN2369A PN2369 PN4355 PN4356 PN4357 , 2N4972 2N5026A 2N5030 2N5055 2N5056 2N5057 2N5086 2N5087 2N5088 2N5089 2N5106 2N5107 2N5134 , PN2222 PN2222 2N4953 PN2222 2N5087 PN2484 PN2484 PN3565 2N4400 2N4401 2N4402 2N4403 MPSA14 PN2369A PN4258 2N5771 2N5771 2N5086 2N5087 2N5088 2N5089 TN2219A PN2222 PN5134 PN2222 PN2222 , 2N5087 2N4401 2N4402 2N4402 2N5087 2N4401 2N4402 D45C11 2N6076 2N6426 2N6427 2N6548 2N6549 -
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1N1744A 1N4548 1N4008 Diode 1N4008 1N4008 diode 1n4148 1N100 1N100A 1N101 1N102 1N103 1N104
Abstract: 2N5087 Preferred Device Amplifier Transistor PNP Silicon Features · Pb-Free Package is , -226) CASE 29 STYLE 1 MARKING DIAGRAM Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 2N5087 = Device Code Y , , Junction-to-Ambient Thermal Resistance, Junction-to-Case ORDERING INFORMATION Device 2N5087 2N5087G 2N5087RLRA , Publication Order Number: 2N5087/D 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ) http://onsemi.com 83 2N5087 TYPICAL NOISE CHARACTERISTICS (VCE = - 5.0 Vdc, TA = 25°C) 10 7.0 ON Semiconductor
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AN569/D
Abstract: 2N5087 Preferred Device Amplifier Transistor PNP Silicon Features · Pb-Free Packages are , location) ORDERING INFORMATION Device 2N5087 2N5087G 2N5087RLRA 2N5087RLRAG *For additional , future use and best overall value. Publication Order Number: 2N5087/D 2N5087 ELECTRICAL , : Pulse Width 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 2N5087 TYPICAL NOISE CHARACTERISTICS , 700 1.0 k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband http://onsemi.com 3 2N5087 ON Semiconductor
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2N collector characteristic curve AN569
Showing first 20 results.