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2N5062 Central Semiconductor Corp Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-92, PLASTIC PACKAGE-3 visit Digikey Buy
2N5062 LEAD FREE Central Semiconductor Corp SCR 0.8A 100V TO-92 visit Digikey Buy

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Part : 2N5062G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : 2N5062 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 3,966 Best Price : $0.10 Price Each : $0.13
Part : 2N5062RLRA Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 44,000 Best Price : $0.10 Price Each : $0.13
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Part : 2N5062 Supplier : Motorola Manufacturer : basicEparts Stock : 62 Best Price : - Price Each : -
Part : 2N5062RLRAG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 11,580 Best Price : $0.31 Price Each : $0.31
Part : 2N5062G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.0803 Price Each : £0.4060
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2N5062 Datasheet

Part Manufacturer Description PDF Type
2N5062 Central Semiconductor Silicon Controlled Rectifiers - 0.8 To 110 Amperes Rms 15 To 1200 Volts Original
2N5062 Central Semiconductor SCRs - Single, Discrete Semiconductor Products, SCR 0.8A 100V TO-92 Original
2N5062 On Semiconductor THYRISTOR SCR 100V 10A 3TO-92 BOX Original
2N5062 On Semiconductor Thyristor 0.8A 100V; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000 Original
2N5062 On Semiconductor SCRs 0.8 AMPERES RMS 30 thru 200 VOLTS Original
2N5062 Teccor Electronics Thyristor, SCR, 100V Forward Blocking Voltage, 0.51A On-State Current, 5mA Holding Current, 0.8A RMS Current Original
2N5062 Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original
2N5062 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan
2N5062 Boca Semiconductor SCRs (Silicon Controlled Rectifiers) Scan
2N5062 Central Semiconductor Silicon Controlled Rectifiers Scan
2N5062 EIC Semiconductor Thyristors / SCRs Scan
2N5062 General Electric Semiconductor Data Handbook 1977 Scan
2N5062 Loras Industries SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-202 Scan
2N5062 Motorola Motorola Semiconductor Datasheet Library Scan
2N5062 Motorola The European Selection Data Book 1976 Scan
2N5062 Motorola European Master Selection Guide 1986 Scan
2N5062 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5062 N/A Basic Transistor and Cross Reference Specification Scan
2N5062 N/A Cross Reference Datasheet Scan
2N5062 N/A Short Form Datasheet and Cross Reference Data Scan
Showing first 20 results.

2N5062

Catalog Datasheet MFG & Type PDF Document Tags

2N5062

Abstract: 2N5061 Surface for Reliability and Uniformity 2N5060 2N5061 2N5062* 2N5064 * â'¢Motorola preferred devices SCRs , 125»C) (RqK= 1000 ohms) 2N5060 2N5061 2N5062 2N5064 VDRM or VrrM 30 60 100 200 Volts On-State Current , best overall value. REV 1 3-2 Motorola Thyristor Device Data 2N5060 2N5061 2N5062 2N5064 MAXIMUM , Width = 50 (is, 0.1 % Duty Cycle, di/dt = 6 A/^s, dv/dt = 20 V/jis, Iqt = 1 mA) 2N5060,2N5061 2N5062 , measurement. Motorola Thyristor Device Data 3-3 2N5060 2N5061 2N5062 2N5064 CURRENT DERATING FIGURE 1 -
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OCR Scan
2N506 2n5060 thyristor EB-30 motorola reverse blocking triode thyristor To92 thyristor motorola

2N5061

Abstract: 2n5060 thyristor VAK = 7.0 V RL = 100 100 50 2N5062-64 20 10 5.0 2N5060-61 2.0 1.0 0.5 0.2 ­75 ­50 , 2N5060,61 1.0 G 0.8 120V 60 ~ 2N5062-64 0.6 0.4 ­75 ­50 ­25 0 25 50 , 2N5062 * 2N5064 * Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola , 1000 ohms) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (All Conduction Angles) Symbol , © Motorola, Inc. 1995 1 2N5060 2N5061 2N5062 2N5064 MAXIMUM RATINGS - continued Rating Symbol
Motorola
Original
2N5060 MOTOROLA Motorola 2n5060 2N5060-D 2N5061/2N5062 2n5062 datasheet free download 2N5060/D

2N5064

Abstract: 2N5062 Current - 5 mA Maximum Passivated Surface for Reliability and Uniformity 2N5060 2N5061 2N5062* 2N5064 , VoltageO) (T j = 25 to 125°C) (RGK = 1000 ohms) 2N5060 2N5061 2N5062 2N5064 O n-State C u rre n t RMS (All , -© M otorola, Inc. 1995 fM) x_- M O T O R O L A 2N5060 2N5061 2N5062 2N5064 , mA) Volts mA - - US td tr 3 0.2 - US 2N5060, 2N5061 2N5062, 5063, 5064 dv/dt , in m easurement. 2 Motorola Thyristor Device Data 2N5060 2N5061 2N5062 2N5064 CURRENT
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OCR Scan

SCR 2N5060 applications

Abstract: 2n5060 CURRENT YNORMALIZEDa 200 100 50 20 10 2N5060-61 2N5062-64 VAK = 70 V RL = 100 06 50 20 10 05 02 v75 , RGK = 10 k 10 08 2N5060i61 2N5062-64 06 04 v75 v50 v25 0 25 50 75 100 , 2N5061RLRAG 2N5061RLRM 2N5062 2N5062RLRA 2N5064 2N5064RLRA 2N5064RLRM 2N5060RL1 Package TO-92 TO-92 TO-92 TO , ) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction Angles; TC = 80°C) *Average On-State , - 10 50 mA mA Symbol Min Typ Max Unit tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30
ON Semiconductor
Original
2N5061G SCR 2N5060 applications SCR 2N5060 102c marking 2N5060RLRA 2N5060RLRM 2N5061RLRA BRD8011/D
Abstract: °C, Sine Wave, 2N5060 50 to 60 Hz, RGK = 1 kW) 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current , tq ms â' â' 2N5060, 2N5061 2N5062, 2N5064 10 30 â' â' â' 30 â , 100 110 50 2N5062 64 20 10 5.0 2N5060 61 2.0 1.0 0.5 0.2 -75 -50 -25 0 25 , 2N5060,61 1.0 0.8 2N5062 64 0.6 0.4 -75 -50 -25 0 25 50 75 TJ, JUNCTION , '92 (Pbâ'Free) 5000 Units / Box 2N5061RLRAG TOâ'92 (Pbâ'Free) 2000 / Tape & Reel 2N5062G ON Semiconductor
Original
92/TO-226AA

2NS061

Abstract: 2n5061 ity 2N5060 2N5061 2N5062* 2N5064* ·Motorola preferred devices SCRs 0.8 AMPERES RMS 30 thru 200 , Data 2N5060 2N5061 2N5062 2N5064 MAXIMUM RATINGS - continued Rating 'O p e ra tin g Junction Tem , 2NS061 2N5062 2N5064 CURRENT DERATING T c , MAXIMUM ALLOWABLE CASE TEMPERATURE f t ) FIGURE 1 -
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OCR Scan
2n 5064 125-C 2NS062

2n5064g

Abstract: 2N5061 2N5060RLRA 2N5060RLRAG 2N5060RLRM 2N5060RLRMG 2N5061 2N5061G 2N5061RLRA 2N5061RLRAG 2N5062 2N5062G 2N5062RLRA 2N5062RLRAG TO-92 2,000 / Ammo Pack 2N5064RLRMG TO-92 (Pb-Free) 2,000 / Ammo Pack , 1 kW) 2N5060 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current RMS (180° Conduction Angles , 2N5062, 2N5064 30 - DYNAMIC CHARACTERISTICS dv/dt Critical Rate of Rise of Off-State Voltage
ON Semiconductor
Original
2n5064g scr 2N5062 2N5060G 2N5064RLRAG SCR 2N5061

2n5063 thyristor

Abstract: sm 6aa °C) 2N5060 2N5061 2N5062 2N5063 2N5064 On-State Current RMS (All Conduction Angles) ·Average On-State Current , Ohms) 2N5060 2N5061 2N5062 2N5063 2N5064 ' d r m . IRRM TC = 25°C T C = 125°C Vt M 'g t T C = 25°C T C , mA ¿IS tq JUS 2N5060, 2N5061 2N5062, 5063, 5064 dv/dt - - - 10 30 30 - - - V
-
OCR Scan
2n5063 thyristor sm 6aa HI110T7 E6-30
Abstract: 2N5060 2N5061 2N5062 2N5064 Peak repetitive off-state voltage (1) (TJ = -40 to +110°C, sine wave , , IGT = 1 mA) 2N5060, 2N5061 2N5062, 2N5064 DYNAMIC CHARACTERISTICS Critical rate of rise of DIGITRON
Original
2N5060-2N5064 MIL-PRF-19500

SCR 2N5060

Abstract: SCR 2N5060 applications 2N5062-64 20 10 5.0 0.5 2N5060-61 2.0 1.0 0.4 0.5 -50 -25 0 25 50 , VAK = 7.0 V RL = 100 RGK = 1.0 k 3.0 2.0 2N5060,61 1.0 0.8 2N5062-64 0.6 0.4 -75 , ,000 / Tape & Reel Device 2N5060RLRAG 2N5061G 2N5061RLRA 2N5061RLRAG 2N5062G 2N5062RLRA , 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction Angles; TC = 80°C) IT(RMS) Value , mA) mA IGT TC = 25°C TC = -40°C ms tq 2N5060, 2N5061 2N5062, 2N5064 - - 10
ON Semiconductor
Original
2n*064 VAK marking 2n5062 free

SCR 2N5060 applications

Abstract: 2N5060 2N5060RLRAG 2N5060RLRM 2N5061 2N5061G 2N5061RLRA 2N5061RLRAG 2N5061RLRM 2N5062 2N5062G 2N5062RLRA 2N5062RLRAG , , GATE TRIGGER CURRENT (NORMALIZED) 200 50 20 10 2N5060-61 2N5062-64 VAK = 7.0 V RL = 100 100 0.6 , ) 3.0 2.0 VAK = 7.0 V RL = 100 RGK = 1.0 k 1.0 0.8 2N5060,61 2N5062-64 0.6 0.4 -75 -50 , ) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction Angles; TC = 80°C) *Average On-State , Min Typ Max Unit tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - - Voltage
ON Semiconductor
Original

TA112

Abstract: ohm s, T q - * 125r ,C) 2N5060 2N5061 2N5062 2N5063 2N5064 On-State Current R M S (AH Conduction A , 2N5060 2N5061 2N5062 2N5063 2N 5064 ' d r m . Ir r m Tc Tc 25 C 125C Vt m - - - M ax 75 200 U n , flS 2N5060, 2N5061 2N5062, 5063, 5064 dv dt - - _ 10 30 30 - - - Forw ard
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OCR Scan
TA112

BRX49 equivalent

Abstract: 2N5064 equivalent SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts IT (AMPS) o 0.8 @ TC ( C) 55 55 55 55 60 ITSM (AMPS) 6.0 6.0 6.0 6.0 10 TO-92 TO-92 Pinout CASE Pinout CGA TO-18 AGC VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005 2N5060 BRX44* 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45* 100 2N879 2N887 2N3003 2N3007 2N5062
Central Semiconductor
Original
2N880 2N881 2N3004 BRX47 2N6565 BRX49 BRX49 equivalent 2N5064 equivalent BRX49 pinout BRX47 BRX49 BRX46 2N888 2N889 2N882

SCR 2N5060

Abstract: SCR 2N5061 2N5062-64 20 10 5.0 0.5 2N5060-61 2.0 1.0 0.4 0.5 -50 -25 0 25 50 , VAK = 7.0 V RL = 100 RGK = 1.0 k 3.0 2.0 2N5060,61 1.0 0.8 2N5062-64 0.6 0.4 -75 , TO-92 2,000 / Ammo Pack 2N5062 TO-92 5,000 Units / Box 2N5062RLRA TO-92 2,000 , *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 On-State Current , = 25°C TC = -40°C ms tq 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - - -
ON Semiconductor
Original

2N5061/2N5062

Abstract: BRX49 (Silicon Controlled Rectifiers) Metal/Plastic Packages Boca Semiconductor Corp. BSC onAmKer6S RMS http://www.bocasemi.com 15 to 1200 Volts F It (AMPS) 0.8 @ Tc (°C) 55 55 55 55 60 60 ITSM(AMPS) 6.0 6.0 6.0 6.0 10 10 CASE TO-18 TO-92 f TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005 2N5060 BRX44 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45 100 2N879 2N887 2N3003 2N3007 2N5062 BRX46 150 2N880 2N888 2N5063 200 2N881 2N889 2N3004 2N3008 2N5064 BRX47 300
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OCR Scan
N6565 2n6564 2N6564 BOCA 2N65 2N5061/BRX45 brx48 2N890 2N6564 BRX48 2N883 2N891

BRX49

Abstract: 2N5061/2N5062 SCRS (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts IT (AMPS) 0.8 @ Tc (°C) 55 55 55 55 60 60 ITSM(AMPS) 6.0 6.0 6.0 6.0 10 10 CASE TO-18 TO-92 f TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005 2N5060 BRX44 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45 100 2N879 2N887 2N3003 2N3007 2N5062 BRX46 150 2N880 2N888 2N5063 200 2N881 2N889 2N3004 2N3008 2N5064 BRX47 300 2N882 2N890 2N6564 BRX48 400 2N883
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OCR Scan

2N5060

Abstract: SCR 2N5060 2N5062 2N5062G 2N5062RLRA 2N5062RLRAG TO-92 2,000 / Ammo Pack 2N5064RLRMG TO-92 (Pb-Free , 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current RMS (180° Conduction Angles; TC = 80°C) IT , tq mA ms ms - - 10 30 - - - 2N5060, 2N5061 2N5062, 2N5064 30 - , 0.4 -50 -25 0 25 50 75 50 2N506264 20 10 5.0 2N506061 2.0 1.0 0.5 0.2 , 100 RGK = 1.0 k 3.0 2.0 2N5060,61 1.0 0.8 2N506264 0.6 0.4 -75 -50 -25 0
ON Semiconductor
Original
asme y14.5m to-92 scr 2N5064 equivalent 2n5060 SCR

2N5060

Abstract: SCR 2N5060 applications 2N5061RLRA 2N5061RLRAG 2N5062 2N5062G 2N5062RLRA 2N5062RLRAG 2N5064 2N5064RLRA 2N5064RLRM 2N5064RLRMG , °C, Sine Wave, 50 to 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction , td tr tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - - Voltage Current , 2N506264 20 10 5.0 2N506061 2.0 1.0 0.5 0.2 -75 -50 -25 0 25 50 75 100 110 TJ, JUNCTION TEMPERATURE (°C , 1.0 0.8 2N5060,61 2N506264 0.6 0.4 -75 -50 -25 0 25 50 75 100 110 TJ
ON Semiconductor
Original

BRX49 pinout

Abstract: BRX49 SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts IT (AMPS) o 0.8 @ TC ( C) 55 55 55 55 60 ITSM (AMPS) 6.0 6.0 6.0 6.0 10 TO-92 TO-92 Pinout CASE Pinout CGA TO-18 AGC VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005 2N5060 BRX44* 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45* 100 2N879 2N887 2N3003 2N3007 2N5062
Central Semiconductor
Original
2N6565 pinout

MCR203

Abstract: MCR205 M O T O R O L A SC { D I O D E S / O P T O Ï DE ta3ti7ESS 0a3fll53 5 1 ;\ 6367255 MOTOROLA SC (DIODES/OPTO) 34C 38153 D SILICON THYRISTOR DIE (continued) 7 ^ 5- // DIE NO. LINE SOURCE - DTL62 Device assembled from this die type are similar to the fol lowing device types: 2N5062 2N5063 2N5064 MCR115 MCR120 MCR201 MCR202 MCR203 MCR204 MCR205 MCR206 2C5062 SCR-Silicon Controlled Rectifier METALLIZATION - T o p
-
OCR Scan

2N5064

Abstract: N5062 ifo rm ity 2N5060 2N5061 2N5062* 2N5064* SCRs 0.8 A M PERES R M S 30 thru 200 VOLTS m or oK , 5 10 - mA ms «q us 2N5060, 2N5061 2N5062, 5063, 5064 dv/dt - _ - 10 30 30
-
OCR Scan
N5062

TIC 160

Abstract: 2N5064 temperature 2NS060 2N5061 2N5062 2N5063 2N5064 UNIT TIC60 TIC61 TIC62 TIC63 TIC64 â'¢Repetitive Peak
-
OCR Scan
TIC 160 thyristor tic 126 AGT Thyristor tic 120 TIC 160 D TIC45 AGK L-STD-202C TI145AO TI145A1 TI145A2

2N5064G

Abstract: 2n5060 = 1 kW) 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction Angles; TC = 80°C) *Average , VGD IH V V mA ms td tr tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - -
ON Semiconductor
Original

2N5060 equivalent

Abstract: 2N5064 equivalent 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 Symbol VDRM, VRRM 30 60 100 200 IT(RMS) IT(AV) 0.51 , 2N5062, 2N5064 - - 10 30 - - DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off­State
ON Semiconductor
Original
2N5060 equivalent 2N5062 equivalent 2N5061 equivalent EQUIVALENT 2N5064 scr 2N5061 equivalent 226AA 64RLRA 64RLRM
Showing first 20 results.