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2N4401 transistor

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2N4401 transistor

Abstract: 2n4401 M C C TO-92 P lastic-E n cap su late T ran sisto rs 2N4401 TRANSISTOR(NPN) FEATURES P cm: 0.625W (Tamb=25'iC) IcM: 0.6 A voltage V(BR)CBO: 60V storage junction temperature range T j , T si9: -55t: to + 150°c E L E C TRI C AL . CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w is e sp ecified) Collector-base breakdown voltage Collector-emitter breakdown voltage , Typical Characteristics 2N4401 lo COLLECTOR CURRENT (mA) DC Current Gain %, BASE CURRENT (mA
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2N4401 transistor 100MH
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol Parameter VCBO Value Units Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current , 30 nS Typical Characteristics 2N4401 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
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Abstract: TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol Parameter VCBO Value Units Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC* Collector Power dissipation , nS 225 nS 30 nS Typical Characteristics 2N4401 Bytes Bytes
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2N4401 transistor

Abstract: 2N4401 2N4401 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25) Collector current A ICM : 0.6 Collector-base voltage V V(BR)CBO : 60 1.EMILTTER 2.BASE 3. COLLECTOR 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS ( Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA , IE=0 60 V Collector-emitter
WEJ Electronic
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2N4401

Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25) Collector current A ICM : 0.6 Collector-base voltage V V(BR)CBO : 60 1.EMILTTER 2.BASE 3. COLLECTOR 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS ( Tamb=25 unless otherwise specified) Symbol Test Collector-base breakdown voltage V
Jiangsu Changjiang Electronics Technology
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2N4401 NPN Transistor

Abstract: 2N4401 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter VCBO Value Units Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current , nS 30 nS Typical Characteristics 2N4401 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
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2N4401 NPN Transistor 100KH
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter VCBO Value Unit Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature Jiangsu Changjiang Electronics Technology
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2N4401

Abstract: 2N4401 transistor Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25) Collector current A ICM : 0.6 Collector-base voltage V V(BR)CBO : 60 1.EMILTTER 2.BASE 3. COLLECTOR 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS ( Tamb=25 unless otherwise specified) Symbol Test Collector-base breakdown voltage V(BR)CBO Ic
Transys Electronics
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter VCBO Value Unit Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current , ) 250 2N4401 0.5mA 0.4mA 100 0.3mA 0.2mA 50 300 Ta=25â"ƒ 100 30 IB Jiangsu Changjiang Electronics Technology
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2N4401

Abstract: TOSHIBA 2N4401 Transistor Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features · Low Leakage Current " Iqev = ^ OOnA (Max.), Ig[ry -100nA (Max.) @ VCE = 35V, VBE = -0.4V · Excellent DC Current Gain Linearity · Low Saturation Voltage - VCE(Sat) = 0.4V (Max.) @ lc = 150mA, lB = 15mA · Low Collector Output Capacitance - Cob = 6.5pF (Max.) @ VCB = 5V · Complementary to , AMERICA ELECTRONIC COMPONENTS, INC. 39 2N4401 Electrical Characteristics (Ta = 25 C) CHARACTERISTIC
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2N4403

power supply dvd player LG

Abstract: IN5822 diode , 200V IN5822 2N4401, Transistor, 0.5A, 40V 1A/275V Fuse 1.5 mH, 0.25 A Ferrite Bead 3.3 µH, 1 A
Power Integrations
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EEL25 TNY267 power supply dvd player LG IN5822 diode power supply DVD schematic diagram DVD player circuit diagram for lg LG DVD player circuit diagram generic dvd player power supply TNY264 TNY266 TL431

2n4401 052

Abstract: 2N4401 NPN Switching Transistor UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401L Halogen-free:2N4401G ORDERING INFORMATION Normal 2N4401 , -052.C 2N4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified , www.unisonic.com.tw 5 of 6 QW-R201-052.C 2N4401 NPN SILICON TRANSISTOR UTC assumes no responsibility for
Unisonic Technologies
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2N4401-T92-B 2N4401-T92-K 2N4401L-T92-B 2n4401 052 2N4401 NPN Switching Transistor UTC 2N4401 2n4401 amplifier 2N4401G TO-92 2N4401L-T92-K 2N4401G-T92-B 2N4401G-T92-K

2N4401

Abstract: 2N4400 ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter , Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 C ST 2N4400 / 2N4401 Characteristics at , at VCE=10V, IC=20mA, f=100MHz ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 Collector Base Capacitance at VCB=5V, f , listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N4400 / 2N4401
Semtech Electronics
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Transistor 2N4401 st2n4401 transistor 2n4401 equivalent 2N4400 2N4401 2n4401 data sheet 2N4401 TO-92

2n4401

Abstract: 2N4400 2N4400/4401 GENERAL PURPOSE TRANSISTOR · Collector-Em ltter Voltage: V Ceo " 40V · Collector Dissipation: Pe (max)*625mW NPN EPITAXIAL SILICON TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS nV»25*C , Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current *D C Current Gain 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 * Collector-Em itter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product 2N4400 :2N4401 Tum On Time Tum O ff Time
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NV25 E-35V

2N4401

Abstract: 2N4400 ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter , Stock Exchange, Stock Code: 724) ® Dated : 02/12/2005 C ST 2N4400 / 2N4401 Characteristics , Bandwidth Product at VCE=10V, IC=20mA, f=100MHz ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 Collector Base Capacitance at , ST 2N4400 / 2N4401 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings
Semtech Electronics
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2N4401 - TRANSISTOR NPN transistor 2n4400 ST 024

2N4401

Abstract: 2N4400 2N4401 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 · Collector-Emitter Voltage: VCEO= 40V · Collector Dissipation: PC (max)=625mW ) ABSOLUTE MAXIMUM RATINGS (TA , %DC Current Gain :2N4401 :2N4400 :2N4401 :2N4400 :2N4401 :2N4400 :2N4401 :2N4400 :2N4401 %Collector-Emitter Saturation Voltage %Base-Emitter Saturation Voltage Output Capacitance :2N4400 :2N4401 , TRANSISTOR Samsung Electronics
Samsung Electronics
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2N4400 datasheet vce 1v

TRANSISTOR 2N 4401

Abstract: 2n4401 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR · Collector-Emitter , Emitter-Base Breakdown Voltage Collector Cut-off Current 'D C Current Gain :2N4401 2N 44 00 2N4401 2N 44 00 2N4401 2 N 44 00 2N4401 2N 44 00 2N4401 · Collector-Emitter Saturation Voltage 'Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product :2N 4 400 2N4401 Turn On Time Turn Off Time , ELECTRONICS 2N4400/4401 DC CURRENT GAIN NPN EPITAXIAL SILICON TRANSISTOR CURRENT OAIN-BANDW1DTH
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TRANSISTOR 2N 4401

2n4401 052

Abstract: 2N4401 transistor UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector , Co., Ltd 1 of 6 QW-R201-052,B 2N4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta , 2N4401 NPN SILICON TRANSISTOR TEST CIRCUIT 30V 200 16V 0 1K 220ns 500 Figure1 , 6 QW-R201-052,B 2N4401 NPN SILICON TRANSISTOR Typical Pulsed Current Gain vs Collector
Unisonic Technologies
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NPN Transistor TO92 25v B1I Transistor 3 pin 2N4401L-T92-R

2N4401 NPN Switching Transistor

Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2N4401 Vishay Semiconductors Small Signal Transistor (NPN) Features C 3 · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , Part Type differentiation 2N4401 Ordering code Remarks 2N4401-BULK or 2N4401-TAP Bulk
Vishay Semiconductors
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2N4401-BULK 2N4401-TAP 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 VISHAY CONNECTORS 2n4401 configuration 88/540/EEC 91/690/EEC D-74025

pin configuration transistor 2n4401

Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2N4401 Vishay Semiconductors Small Signal Transistor (NPN) Features · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401. C 1 2 B 1 18855 2 , : BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box Parts Table Part 2N4401 Type
Vishay Semiconductors
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2N4403 NATIONAL SEMICONDUCTOR
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