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Part : 2N4351 Supplier : Calogic Manufacturer : Future Electronics Stock : 361 Best Price : $3.39 Price Each : $3.63
Part : 2N4351 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 166 Best Price : $2.7177 Price Each : $6.2720
Part : 2N4351 Supplier : Calogic Manufacturer : Karl Kruse Stock : 500 Best Price : $2.66 Price Each : $2.66
Part : 2N4351-TO-72 Supplier : Linear Integrated Systems Manufacturer : NAC Stock : 500 Best Price : $3.80 Price Each : $3.80
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2N4351 Datasheet

Part Manufacturer Description PDF Type
2N4351 Calogic N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch Original
2N4351 Linear Integrated Systems N-channel Mosfet Enhancement Mode Original
2N4351 On Semiconductor TRANS MOSFET N-CH 25V 30A 3TO-18 Original
2N4351 Digitron MOS FET SWITCHING Scan
2N4351 General Instrument Short Form Data 1976 Scan
2N4351 Intersil N-channel enhancement mode MOSFET general purpose amplifier/switch. Scan
2N4351 Intersil Shortform Data Book 1983/4 Scan
2N4351 Intersil Data Book 1981 Scan
2N4351 Motorola Motorola Semiconductor Datasheet Library Scan
2N4351 Motorola The European Selection Data Book 1976 Scan
2N4351 Motorola European Master Selection Guide 1986 Scan
2N4351 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N4351 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N4351 N/A Semiconductor Master Cross Reference Guide Scan
2N4351 N/A Basic Transistor and Cross Reference Specification Scan
2N4351 N/A Shortform Transistor PDF Datasheet Scan
2N4351 N/A Shortform Transistor PDF Datasheet Scan
2N4351 N/A Shortform Datasheet & Cross References Data Scan
2N4351/D N/A Shortform Datasheet & Cross References Data Scan
2N4351/W N/A Shortform Datasheet & Cross References Data Scan

2N4351

Catalog Datasheet MFG & Type PDF Document Tags

mosfet 2n4351

Abstract: 2N4351 2N4351 N-CHANNEL MOSFET The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an , Packaging Information). FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN , Temperatures Storage Temperature Operating Junction Temperature 2N4351 Features: Maximum Power Dissipation , Source Peak Gate to Source (Note 2) 2N4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted , SWITCHING TEST CIRCUIT Click To Buy Available Packages: 2N4351 in TO-72 2N4351 in bare die. TO
Micross Components
Original
mosfet 2n4351

mosfet 2n4351

Abstract: 2N4351 2N4351 25 V - N-Channel Enhancement Mode MOSFET General Purpos. http://store.americanmicrosemiconductor.com/2n4351.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N4351 2N4351 25 V N- C hannel Enhanc em ent M o de M O SFET G eneral Purpo s , ://store.americanmicrosemiconductor.com/2n4351.html U.S Orders Your Americanmicrosemi.com Order Secure Order Processing U.S. Payment , : Americanmicrosemi 2N4351 $ 12.28 $ 9.82 $ 2.46 Total Price $ 9.82 Company Testimonials Store Policies
American Microsemiconductor
Original
2N435

2N4351

Abstract: wafer dice Voltage Vggg Transient Gate to Source Voltage 2N4351 N-Channel Enhancement Mode MOS FET ' D(on) Drain , ORDERING INFORMATION TO-72 WAFER DICE 2N4351 2N4351/W 2N4351/D ELECTRICAL CHARACTERISTICS (Ta = :25Â
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OCR Scan
wafer dice

2N4351

Abstract: Washington University EE-DRS© Document Retrival System 2N4351 Page 1 Washington University EE-DRS© Document Retrival System 2N4351 Page 2 Washington University EE-DRS© Document Retrival System 2N4351 Page 3 Washington University EE-DRS© Document Retrival System 2N4351 Page 4 Motorola
Motorola
Original

mosfet 2n4351

Abstract: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) 1 Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction , '¢ Tel: 510 490-9160 â'¢ Fax: 510 353-0261 Doc 201154 9/26/12 Rev#A3 ECN# 2N4351 SYMBOL , 490-9160 â'¢ Fax: 510 353-0261 Doc 201154 9/26/12 Rev#A3 ECN# 2N4351 Linear Integrated Systems
Linear Integrated Systems
Original

2N4351 equivalent

Abstract: 2N4351 Junction Temperature Range Tj 175 x Storage Temperature Range Tsta -65 to +175 â c 2N4351 TO-72 MOS , BOUND BnOOK, NEW JEHSEY 0B805 isa DGE r-sS'^s' 2N4351 figure 4 â'" "on" drain source voltage 20 II , JERSEY 08805 2N4351 FIGURE 1 _ FORWARD TRANSFER ADMITTANCE ip, drain curreni intai FIGURE 2 â , BOUND BROOK, NEW JERSEY 08805 2N4351 FIGURE S â'" SWITCHING CIRCUIT and WAVEFORMS in ofitpuI losAMnmr
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OCR Scan
2N4351 equivalent mosfet equivalent Digitron 2N4351 complementary BO42

2N4351 MOTOROLA

Abstract: mosfet 2n4351 M O T O RO LA SC XSTRS/R F 1HE D | b3b?a51 GOflkbSS 4 | 2N4351 CASE 20-03, STYLE 2 TO-72 (TO-206AF) MAXIMUM RATINGS Rating Drain-Source Voltage Draln-Gate Voltage Gate-Source Voltage* Drain , F 12E 0 § fc,3b75S4 ÜOäbkab b | 2N4351 T - 3 S aSS 0.1 0.2 0.5 1.0 2.0 5.0 , I 2N4351 FIGURE 4 - " ON" DRAIN-SOURCE VOLTAGE T - S 5 -J5 : VK , DRAIN-SOURCE VOLTAGE , E o 2N4351 | ta t? as M o oatbaa t I FIGURE 9 » SWITCHING CIRCUIT and WAVEFORMS
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OCR Scan
2N4351 MOTOROLA
Abstract: Submit ¡ ¡ 2N4351 Availability Buy 2N4351 at our online store ! 2N4351 Information Cate gory » Transistors Class » MOSFETs and TempFETs Type » MOSFETs; N -Ch; Enhancement 2N4351 American Microsemiconductor
Original

2N4351 MOTOROLA

Abstract: MRF966 2N4351 3N170 3N176 2N4351 3N170 3Nl77 2N4351 3N171 3N178 3N158 3N172 3N179 3N158 3N172 3Nl80 3N158 3N172
Space Power Electronics
Original
2SK355 MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 IRF241 2SK357 BUZ30 BUZ43A IRF623

2N4351

Abstract: mosfet 2n4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) · Low ON Resistance · Low Capacitance Gain · High Gate Breakdown Voltage · High · Low Threshold Voltage Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . , 2N4351 X2N4351 C D Package Temperature Range Hermetic TO-72 Sorted Chips in Carriers
Calogic
Original
DS002

mosfet 2n4351

Abstract: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 FEATURES · · · · · Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Drain-Source Voltage or Drain-Body Voltage . 25V Peak Gate-Source Voltage (Note 1) . ±125V Drain C u rre n t , extended periods may affect device reliability. ORDERING INFORMATION Part 2N4351 X2N4351 Package
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OCR Scan

2n4351

Abstract: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage Drain-Source Voltage or Drain-Body Voltage . 25V Peak Gate-Source Voltage (Note 1 , reliability. ORDERING INFORMATION Part Package 2N4351 X2N4351 Hermetic TO-72 Sorted Chips in
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OCR Scan

2N4351

Abstract: mosfet 2n4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) · Low ON Resistance · Low Capacitance Gain · High Gate Breakdown Voltage · High · Low Threshold Voltage Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . , 2N4351 X2N4351 C D Package Temperature Range Hermetic TO-72 Sorted Chips in Carriers
Calogic
Original

2n4351

Abstract: mosfet 2n4351 SOLID STATE 3875081 G E SOLID STATE 01 DE I 3fl?SDfll 01E 10977 T- 35*- D010T77 D 2. r * 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES · · · · · Lorç ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25"C unless otherwise noted) Drain-Source Voltage or Drain-Body V o lta g e , reliability. PIN CONFIGURATION ORDERING INFORMATION TO-72 2N4351 ELECTRICAL CHARACTERISTICS Symbol
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OCR Scan

2N4351

Abstract: G E SOLID STATE 3875081 G E SOLID STATE 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch Ol ]>E|3fl7SDfll D01CH77 7 01E 10977 D T- 3S*- 2- r FEATURES â'¢ LOW; ON Resistance â'¢ Low Capacitance â'¢ High Gain â'¢ High Gate Breakdown Voltage â'¢ Low Threshold Voltage PIN CONFIGURATION TO-72 1003 0218-1 ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted , . ORDERING INFORMATION TO-72 2N4351 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified
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OCR Scan
Abstract: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE s FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) G 2 3 D S 1 4 C Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation 375mW Maximum Current Drain to Source Linear Integrated Systems
Original

2N4351

Abstract: mosfet 2n4351 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) G Storage Temperature -55 to +150 °C 3 D 1 4 C -65 to +200 °C Operating Junction Temperature 2 S Maximum Temperatures Maximum Power Dissipation Continuous Power Dissipation 375mW Maximum
Linear Integrated Systems
Original
Abstract: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs( t h ) r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300 .7 3N166 - 10 -5 300 .7 3N170 + / - 10 2 200 1.3 3N171 + / - 10 3 200 1.3 3N172 - 200 -5 250 1.0 3N173 - 500 -5 350 1.0 3N190 - 10 -5 300 1.0 3N191 - 10 -5 300 1.0 2N4351 - 10 5 300 1.3 2N4352 - Calogic
Original
T1700 T1750

2N4351

Abstract: 3N161 signals. 2N4351 TO-72 1.0 5.0 25 10 nA 10.0 1000.0 300 3 - 3N170 TO-72 1.0 2.0 25 10 nA 10.0
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OCR Scan
3N161 IT1700 IT1750 M116 VCR3P ID-100 ID-101

2N4351 MOTOROLA

Abstract: 3N169 MOTOROLA SC { D I O D E S / O P T O } 34 DE|b3b755S CID3ÛD41 5 636 72 55 M O T O RO LA SC (DIODES/OPTO) FIËLD-EFFECT TRANSISTORS DICE (continued) 3^ c 38041 T - JJT- Z - i D DIE NO. LINE SOURCE - DFM122 This die provides performance equal to or better than that of the following device types: 2N4351 3N169 3N170 3N171 MMCS0122 3C169 N-Channel MOSFET designed for low-power switching applications. METALLIZATION - Top
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OCR Scan
DFM12

2N4351

Abstract: J201 spice 2N4351 Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain to Source Maximum Voltages Drain to Body Drain to Source Peak Gate to Source2 25V 25V ±125V , 2N3955 2N3956 2N3958 2N4117A 2N4118A 2N4119A 2N4351 2N4391 2N4392 2N4393 2N4416A 2N4416 2N5018 2N5019
Linear Integrated Systems
Original
J201 spice intersil JFET TO 18 JFET NPN AMPLIFIER A6 ZENER DIODE bare Die mosfet
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