NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N4123 | Allegro MicroSystems, Inc. | General Purpose Bipolar Transistor, NPN, 30 MinV, TO-92, 3-Pin |
5 pages, |
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| 2N4123 | Central Semiconductor | NPN EPOXY - SWITCHING AND GENERAL PURPOSE |
3 pages, |
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| 2N4123 | Central Semiconductor | Small Signal Transistors, TO-92 Case |
1 pages, |
Original | |
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| 2N4123 | Continental Device India Limited | Semiconductor Device Data Book 1996 |
1 pages, |
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| 2N4123 | Crimson Semiconductor | Transistor Selection Guide |
36 pages, |
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| 2N4123 | Fairchild Semiconductor | NPN General Purpose Amplifier |
11 pages, |
Original | |
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| 2N4123 | Fairchild Semiconductor | NPN General Purpose Amplifier |
2 pages, |
Original | |
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| 2N4123 | Fairchild Semiconductor | NPN small signal general purpose amplifier & switch. |
9 pages, |
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| 2N4123 | Fairchild Semiconductor | Small Signal Transistor |
7 pages, |
Original | |
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| 2N4123 | Fairchild Semiconductor | Full Line Condensed Catalogue 1977 |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2N4123 2N4124 2N4124 NPN SILICON PLANAR EPITAXIAL TRANSISTOR STO GENERAL DESCRIPTION ; The 2N4123 and , applications. 2N4123 and 2N4124 2N4124 are complementary to PNP 2N4125 2N4125 and 2N4126 2N4126. MECHANICAL OUTLINE TO-92A EBC , to Quitter Voltage, Emitter to Base Voltage, V, CBO 'CEO EBO Pd (2N4123 ) 40V (2N4123) 30V , Breakdown Voltage bvcbo V Ic-10uA 2N4123 2N4124 2N4124 40 30 Collector-Emitter Breakdown Voltage * bvceo V Ic=lmA ïr^O 2N4123 2N4124 2N4124 30 25 Emitter-Base Breakdown Voltage bvebo 5 V IE=10uA IfO ... | OCR Scan |
2 pages, |
2N4126 2N4125 2N412 2N4124 2N4123 2N4123 abstract |
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| Abstract: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo = 2N4123: 30V 2N4124 2N4124: 25V • Collector Dissipation: Pc , :2N41 23 40 V 2N4124 2N4124 30 V •Collector-Emitter Breakdown Voltage BVceo lc=1mA, lB=0 :2N4123 ... | OCR Scan |
1 pages, |
2N4124 2N4123 2N3904 2n4123 transistor 2N41 2N4123/4124 2N4123/4124 abstract |
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| Abstract: 2N4123 2N4124 2N4124 PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION : The 2N4123 and 2N4124 2N4124 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. 2N4123 and 2N4124 2N4124 are complementary to PNP 2N4125 2N4125 and 2N4126 2N4126. MECHANICAL OUTLINE TO-92A ABSOLUTE MAXIMUM RATINGS : Continuous Power Dissipation @ T*=25V'C, Collector Junction Temperature, Tj Storage Temperature , CBO C V Emitter to Base Voltage, V. CEO EBO EBC Am Pd (2N4123) 40V (2N4123) 30V 310mW 135 C -55°C to ... | OCR Scan |
2 pages, |
2N4126 2N4125 2N4123 2N4124 2N4123 abstract |
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| Abstract: MCC 2N4123 2N4124 2N4124 omponents 20736 Marilla Street Chatsworth !"# $ % !"# , A E l Case: TO-92, Molded Plastic l Marking: B 2N4123 - 2N4123 2N4124 2N4124 , Collector-Emitter Voltage 2N4123 30 VCEO V 2N4124 2N4124 25 Collector-Base Voltage 2N4123 40 VCBO V 2N4124 2N4124 30 Emitter-Base Voltage 2N4123 VEBO 5 V 2N4124 2N4124 Collector Current(DC) IC 200 mA mW 625 Pd Power , /04/30 MCC 2N4123 2N4124 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted ... | Original |
5 pages, |
2N4124 pin configuration datasheet abstract |
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| Abstract: MCC 2N4123 2N4124 2N4124 omponents 21201 Itasca Street Chatsworth !"# $ % !"# , A E l Case: TO-92, Molded Plastic l Marking: B 2N4123 - 2N4123 2N4124 2N4124 , Collector-Emitter Voltage 2N4123 30 VCEO V 2N4124 2N4124 25 Collector-Base Voltage 2N4123 40 VCBO V 2N4124 2N4124 30 Emitter-Base Voltage 2N4123 VEBO 5 V 2N4124 2N4124 Collector Current(DC) IC 200 mA mW 625 Pd Power , 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 -0.63 3.68 2.67 NOTE MCC 2N4123 ... | Original |
5 pages, |
datasheet abstract |
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| Abstract: 2N4123 2N4124 2N4124 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Mechanical Data A E l Case: TO-92, Molded Plastic l Marking: B 2N4123 - 2N4123 , Unit Collector-Emitter Voltage 2N4123 30 VCEO V 2N4124 2N4124 25 Collector-Base Voltage 2N4123 40 VCBO V 2N4124 2N4124 30 Emitter-Base Voltage 2N4123 VEBO 5 V 2N4124 2N4124 Collector Current(DC) IC 200 , 14.97 0.56 3.96 2.64 NOTE 2N4123 2N4124 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25°C unless ... | Original |
5 pages, |
2N4124 2N4123 2N4123 abstract |
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| Abstract: 2N4123, 2N4124 2N4124 General Purpose Transistors NPN Silicon Features · Pb-Free Packages are , Symbol 2N4123 2N4124 2N4124 2N4123 2N4124 2N4124 Emitter-Base Voltage VCEO VCBO Value 2 BASE , may be in either location) ORDERING INFORMATION Device Package Shipping 2N4123RLRM , Brochure, BRD8011/D BRD8011/D. 2N4123, 2N4124 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IE = 0) 2N4123 ... | Original |
3 pages, |
2N4124G 2N4123RLRM 2N4123 2N4124 2N4123 abstract |
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| Abstract: 2N4123 _9M 4194_ PHILIPS INTERNATIONAL SbE D â- 711Dfl2t D042bb2 T3T «PHIN - SILICON , = 20 V Noise figure at = 1 ki2 lc= 100 juA; VCE = 5 V f = 10 Hz to 15,7 kHz 2N4123 2N4124 2N4124 vCBO , June 1992 785 This Material Copyrighted By Its Respective Manufacturer 2N4123 2N4124 2N4124 SbE T , ) 7110ôEb 004Sbb3 'ïïb IPHIN T-29-19 T-29-19 2N4123 2N4124 2N4124 Collector-base voltage (open emitter) vCBO max. , < < 300 950 mV mV 2N4123 2N4124 2N4124 D.C. current gain * lc= 2mA;Vce = 1 v hfe > < 50 150 120 360 ... | OCR Scan |
2 pages, |
2N4126 2N4125 2N4124 2N4123 2N4123 abstract |
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| Abstract: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 2N4124 CASE 29�, STYLE 1 TO� (TO�6AA) Unit Collector � , , IE = 0) V(BR)CEO 2N4123 2N4124 2N4124 Vdc V(BR)CBO 2N4123 2N4124 2N4124 Emitter � Base Breakdown , Motorola Smallç'-ignal Transistors, FETs and Diodes Device Data � Motorola, Inc. 1996 1 2N4123 2N4124 2N4124 ... | Original |
6 pages, |
2N4123 2N4124 2N4123 MOTOROLA 2N4124 MOTOROLA 2N4123/D 2N4123/D abstract |
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| Abstract: SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by 2N4123/D General Purpose Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4123 2N4124 2N4124 1 2 3 MAXIMUM RATINGS Rating , 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N4123 , 300 ms, Duty Cycle = 2.0%. V(BR)CEO 2N4123 2N4124 2N4124 V(BR)CBO 2N4123 2N4124 2N4124 V(BR)EBO ICBO IEBO 40 30 5.0 , Diodes Device Data © Motorola, Inc. 1996 1 2N4123 2N4124 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25°C ... | Original |
6 pages, |
2N4123/D 2N4123/D abstract |
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| Abstract: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 2N4124 CASE 29�, STYLE 1 TO� (TO�6AA) Unit Collector � , , IE = 0) V(BR)CEO 2N4123 2N4124 2N4124 Vdc V(BR)CBO 2N4123 2N4124 2N4124 Emitter � Base Breakdown , 2N4123 2N4124 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25癈 unless otherwise noted) (Continued) Symbol Min ... | Original |
6 pages, |
2N4124 2N4123 MOTOROLA 2N4123 2N4123/D 2N4123/D abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .model 2N4123 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=335.3 Ne=1.216 + Ise=6.734f Ikf=61.27m Xtb=1.5 Br=.7925 Nc=2 Isc=0 Ikr=0 Rc=1 + Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 + Tr=243.1n Tf=300.8p Itf=.4 Vtf=4 Xtf=2 Rb=10) * Fairchild pid=23 case=TO92 * 88-09-08 bam creation www.datasheetarchive.com/files/fairchild/pdfs/models actual/2n4123.mod |
Fairchild | 22/08/2003 | 0.39 Kb | MOD | 2n4123.mod |
| .model 2N4123 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=335.3 Ne=1.216 + Ise=6.734f Ikf=61.27m Xtb=1.5 Br=.7925 Nc=2 Isc=0 Ikr=0 Rc=1 + Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 + Tr=243.1n Tf=300.8p Itf=.4 Vtf=4 Xtf=2 Rb=10) * Fairchild pid=23 case=TO92 * 88-09-08 bam creation www.datasheetarchive.com/files/fairchild/pdfs/models/2n4123.txt |
Fairchild | 22/08/2003 | 0.39 Kb | TXT | 2n4123.txt |
| .model 2N4123 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=335.3 Ne=1.216 + Ise=6.734f Ikf=61.27m Xtb=1.5 Br=.7925 Nc=2 Isc=0 Ikr=0 Rc=1 + Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 + Tr=243.1n Tf=300.8p Itf=.4 Vtf=4 Xtf=2 Rb=10) * Fairchild pid=23 case=TO92 * 88-09-08 bam creation www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/fairchild/2n/2n4123.lib |
Spice Models | 29/07/2012 | 0.39 Kb | LIB | 2n4123.lib |
| No abstract text available www.datasheetarchive.com/download/72942918-672642ZC/2n4123.jpg |
User Photos | 23/05/2012 | 6.17 Kb | JPG | 2n4123.jpg |
| ,2,3 .PARAM Q2N3903 Q2N3903 Q2N3903 Q2N3903 File:Mcebjt.lib *Si 625mW 30V 200mA 250MHz GenPurp pkg:TO-92B 1,2,3 .PARAM Q2N4123 www.datasheetarchive.com/files/spicemodels/misc/models/npn.mod |
Spice Models | 17/09/2010 | 4.65 Kb | MOD | npn.mod |
| ,2,3 .PARAM Q2N4123 File:Mcebjt.lib *Si 350mW 15V 200mA 300MHz GenPurp pkg:TO-92B 1 www.datasheetarchive.com/files/spicemodels/misc/models/npn2.mod |
Spice Models | 17/09/2010 | 5.11 Kb | MOD | npn2.mod |
| .1 MJE=0.5 CJC=4.73P VJC=0.3 MJC=0.3 TF=636P TR=298N) *2N4123 MCE 5-20-97 *Ref: Motorola Small-Signal Device Databook, Q4/94 Q4/94 Q4/94 Q4/94 *Si 625mW 30V 200mA 250MHz GenPurp pkg:TO-92B 1,2,3 .MODEL 2N4123 NPN (IS=20.3F www.datasheetarchive.com/files/spicemodels/misc/models/mcebjt.lib |
Spice Models | 17/09/2010 | 51.12 Kb | LIB | mcebjt.lib |
| ATT1/D (73.0kB) 3 100 General Purpose Transistor - NPN 2N4123/D (81.0kB) 3 100 General Purpose Transistor - NPN Silicon www.datasheetarchive.com/files/on-semiconductor/taxonomy/bipolartransistors.htm |
On Semiconductor | 28/09/2007 | 122.37 Kb | HTM | bipolartransistors.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N4123 | N/A | Low Power, General Purpose | |
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| 2N4123 | N/A | Silicon NPN | |
| Central Part | Industry Part | Type | Description |
| 2N4123 Buy | 2N4123_D26Z Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| 2N4123 Buy | 2N4123_D27Z Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| 2N4123 Buy | 2N4123_D74Z Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| 2N4123 Buy | 2N4123_D75Z Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| 2N4123 Buy | MPS4123 Buy | Exact electrical and mechanical. | Leaded Small Signal Transistor General Purpose |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| NTE Electronics Part | Industry Part |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| 2N3904RLRAG Buy | 2N4123 Buy | Philips Semiconductors | Close |
| 2N3904RLRAG Buy | 2N4123D26Z Buy | Fairchild Semiconductor | Close |
| Part | Similar Part | Notes |
| 2N4123 Buy | 242718 Buy | |
| 2N4123 Buy | 242720 Buy | |
| 2N4123 Buy | 2M3903 Buy | |
| 2N4123 Buy | 2N1060 Buy | |
| 2N4123 Buy | 2N2220 Buy | |
| 2N4123 Buy | 2N2221 Buy | |
| 2N4123 Buy | 2N2221(A) Buy | |
| 2N4123 Buy | 2N2222 Buy | |
| 2N4123 Buy | 2N2222(A) Buy | |
| 2N4123 Buy | 2N2222/A Buy |