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JAN2N3997 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin, TO-111, 4 PIN visit Digikey Buy
JANTX2N3997 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin, TO-111, 4 PIN visit Digikey Buy
JANTXV2N3997 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin, TO-111, 4 PIN visit Digikey Buy

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2N3997 Datasheet

Part Manufacturer Description PDF Type
2N3997 Microsemi NPN POWER SWITCHING SILICON TRANSISTOR Original
2N3997 API Electronics Short form transistor data Scan
2N3997 Diode Transistor NPN TO-111 / TO-59 Transistors Scan
2N3997 Diode Transistor Transistor Short Form Data Scan
2N3997 General Diode Transistor Selection Guide Scan
2N3997 General Transistor NPN Power Transistors Scan
2N3997 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N3997 Motorola Motorola Semiconductor Datasheet Library Scan
2N3997 N/A Transistor Shortform Datasheet & Cross References Scan
2N3997 N/A Basic Transistor and Cross Reference Specification Scan
2N3997 N/A Catalog Scans - Shortform Datasheet Scan
2N3997 N/A Shortform Transistor PDF Datasheet Scan
2N3997 N/A Shortform Transistor PDF Datasheet Scan
2N3997 N/A Semiconductor Master Cross Reference Guide Scan
2N3997 N/A Shortform Electronic Component Datasheets Scan
2N3997 N/A Shortform Transistor Datasheet Guide Scan
2N3997 N/A Vintage Transistor Datasheets Scan
2N3997 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3997 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3997 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

2N3997

Catalog Datasheet MFG & Type PDF Document Tags

2N3996

Abstract: 2N3999 2N3996-2N3998 .01 .02 .05 .1 .2 .5 1 2 5 10 lc â'" COLLECTOR CURRENT (A) D.C. Current Gain 2N3997-2N3999 .01 , 2N3997 JAN, JANTX, & JANTXV 2N3998 JAN, JANTX, & JANTXV 2N3999 FEATURES â'¢ Meets MIL-S-19500/374* â , .â'"65°C to 200°C MECHANICAL SPECIFICATIONS JAN, JANTX, & JANTXV 2N3996, 2N3997 / 10-32 - NF-2A THREAD , TO-111 68 nm _ UNITRODE JAN, JANTX, & JANTXV 2N3996, 2N3997, 2N3998, 2N3999 ELECTRICAL , , & JANTXV 2N3996, 2N3997, 2N3998, 2N3999 Forward Bias Safe Operating Area 1 2 5 10 20 50 80 Vct â
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OCR Scan
N3998 2N3997 JAN to-111 JANTXV2N3999 UNITRODE TRANSISTORS

2n3997

Abstract: 2N3996 TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR , Package (2N3996, 2N3997) · M ax V cE(sat) of 0-25 V at 1 A l c · M ax t on of 300 ns at 1 A I c · * m , T0-11I DIMENSIONS AND 2N3996 2N3997 TH E C O L L E C T O R IS IN E L E C T R IC A L C O N T A C T , DA LL AS. T E X A S 7 5 2 2 2 5-127 TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL , 2 2 2 TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS
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OCR Scan
9012 transistor Transistor 9012 ax T0-I11

transistor sl 431

Abstract: UNF-2A dimensions for transistor types 2N3996 and 2N3997. 3 MIL-PRF-19500/374E Symbol CH A1 CD CD1 HF , the unencapsulated die. * 1.2 Physical dimensions. See figure 1 (types 2N3996 and 2N3997, 4 lead stud , V dc pF 1.6 2.0 150 f = 10 MHz Cobo VCB = 10 V dc 2N3996 2N3997 2N3998 2N3999 , types 2N3996 and 2N3997 - Continued. 4 MIL-PRF-19500/374E FIGURE 2. Physical dimensions for , (types 2N3996 and 2N3997 only); and 2N3997 only); test test condition B (short collector, condition B
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Original
transistor sl 431 UNF-2A C-2688 MIL-PRF19500 MIL-PRF-19500/374D MIL-PRF-19500 JANHCB2N3996 JANHCA2N3996 JANHCA2N3997 JANHCA2N3998

2N3996

Abstract: 2n3997 2 lc - C O L L E C T O R C U R R E N T (A) 5 10 D.C. Current Gain 2N3997-2N3999 Saturation , JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATU RES D ESCRIPTIO N · · · · , IC A L S PECIFIC ATIO N S JAN, JANTX, & JAN TXV 2N3996, 2N3997 I -» I - E - T =^D i G , JANTXV 2N3996, 2N3997, 2N399S, 2N 3999 E L E C T R IC A L SPECIFIC ATIO N S (at 25°C unless noted)t 2N , , 2N3997, 2N3998, 2N3999 Forward Bias Safe Operating Area U n d a m p e d Reverse Bias Second
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OCR Scan
L6228

2N3751

Abstract: 2N3752 JTXV TO- 100 80 8 40 120 2 1 .25 1.6 1 .1 3.33 60 2N3996 111/1 2N3997 TO- 100 80 8 80 , 2N3997 111/1 JTX TO- 100 80 8 80 240 2 1 .25 1.6 1 .1 3.33 60 2N3997 111/1 JTXV TO- 100 80 8 80 240 2 1 .25 1.6 1 .1 3.33 60 2N3997 111/1 2N3998 TO- 100 80 8 40
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OCR Scan
2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 0D0D223

2N3997 JAN to-111

Abstract: 2N4116 TO- 100 80 8 40 120 2 1 .25 1.6 1 # 1 3.33 60 2N3996 111A 2N3997 TO- lllA 100 80 8 80 240 2 1 .25 1.6 1 . 1 3.33 60 JAN TO- 100 80 8 80 240 2 1 .25 1.6 1 . j 3.33 60 2N3997 111/1 JTX TO- 100 80 8 80 240 2 1 .25 1.6 i 3.33 60 2N3997 111/1 â'¢ i JTXV 2N3997 TO-111/1
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OCR Scan
2N3853 2N3928 2N3929 2N4116 2N4232 2N4233 2N4300

transistor sd 965

Abstract: 2n3996 equivalent transistor Qualified per MIL-PRF-19500/374 DEVICES LEVELS 2N3996 2N3997 2N3998 2N3999 JAN JANTX , TC > +100°C TO-111 2N3996, 2N3997 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise , = 2.0Vdc IC = 1.0Adc, VCE = 2.0Vdc IC = 5.0Adc, VCE = 5.0Vdc 2N3996, 2N3998 2N3997, 2N3999 , . Physical dimensions for transistor types 2N3996 and 2N3997 - Continued. T4-LDS-0165 Rev. 1 (100688
Microsemi
Original
transistor sd 965 2n3996 equivalent transistor T1 SL 100 NPN Transistor equivalent of SL 100 NPN Transistor TRANSISTOR SL 100 190-32 UNF-2a

2N3996

Abstract: 2N3997 TECHNICAL DATA 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/374 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Total Power Dissipation @ TA = 250C (2) @ TC = 1000C (3) Operating , : C Page 1 of 2 2N3996, 2N3997, 2N3998, 2N3999 JAN SERIES ELECTRICAL CHARACTERISTICS (con't , 2N3996, 2N3998 2N3997, 2N3999 0.25 2.0 VCE(sat) Vdc Vdc VBE(sat) 0.6 1.2 1.6
New England Semiconductor
Original

2N3997

Abstract: SOLI» STATE DEVICES INC 12E I | s 3 t t D l l OOOSOtl 7 | T - S 2 - C ? 2N3996 AND 2N3997 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE Z FEATURES JEDEC TO- 111 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 (213) 921-9660 TW X 910-583-4807 , Cutoff Current (V c E = 60 V d c ) r CE0 I CES TC = ls n o r 1 » ' ebo 2N3996 2 o 2 Vdc) vdc) Vdc) 2N3997 2N3996 2N3997 2N3996 2N3997 hFE* 30 60 40 80 15 20 10 5 50 500 10 uAdc uAdc Sym bol M in . M a x. U n it
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OCR Scan
2N4999 2N5001 B326G

transistor 2N3

Abstract: D.C. Current Gain 2N3997-2N3999 .01 .02 .05 .1 .2 .5 1 2 lc â'" COLLECTOR CURRENT (A , 2N3997 & JANTXV 2N3998 & JANTXV 2N3999 Collector-Base Voltage.^Op to 100V D.C. Collector Current ,   R347c lb3 GÃ1S4Ã5 Ã75 â  U N I T JAN, JANTX, & JANTXV 2N 3996, 2N3997,2N3998, 2N3999 T -3 3 -0 , , 2N3997, 2N399S, 2N3999 niC RO SEIil CORP/ IÃATERTOLÃN SO E » T347Tb3 0D1E4Ã"3 7 D c M U , A JAN, JANTX, & JANTXV 2N3996, 2N3997, 2N3998, 2N3999 M I C R O S E m CORP/ WATERTOWN SDE D
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OCR Scan
transistor 2N3

TO111

Abstract: 2N3751 2N3997 TO- lllA 100 80 8 80 240 2 1 .25 1.6 1 . 1 3.33 60 JAN 2N3997 TO-111/1 100 80 8 80 240 2 1 .25 1.6 1 .1 3. 33 60 JTX 2N3997 TO-111/1 100 80 8 80 240 2 1 .25 1.6 1 .1 3.33 60 JTXV 2N3997 TO-111/1 100
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OCR Scan
2N4115 2N4307 2N4309 TO111 2N4111 2N4112 2N4113 2N4114 2N4231

2n3996 equivalent transistor

Abstract: transistor sd 965 Qualified per MIL-PRF-19500/374 DEVICES LEVELS 2N3996 2N3997 2N3998 2N3999 JAN JANTX , linearly 300 mW/°C for TC > +100°C TO-111 2N3996, 2N3997 ELECTRICAL CHARACTERISTICS (TA = +25°C , 2N3996, 2N3998 2N3997, 2N3999 Collector-Emitter Saturation Voltage IC = 1.0Adc, IB = 0.1Adc IC = , types 2N3996 and 2N3997 - Continued. T4-LDS-0165 Rev. 1 (100688) Page 3 of 4 TECHNICAL DATA
Microsemi
Original
Abstract: .6 1 .1 3.33 60 60 111 lllA JAN 2N3996 JTX 2N3996 JTXV 2N3996 2N3997 JAN 2N3997 JTX 2N3997 JTXV 2N3997 2N3998 JAN 2N3998 JTX 2N3998 JTXV 2N3998 2N3999 TO- 100 -
OCR Scan

diode cc 3053

Abstract: cc 3053 for transistor types 2N3996 and 2N3997. 2 MIL-PRF-19500/374D Dimensions Symbol Inches , dimensions. See 3.3 and figure 1 (types 2N3996 and 2N3997, 4 lead stud package), figure 2 (types 2N3998 and , = 500 mA dc 100 kHz f 1 MHz f = 10 MHz 2N3996 2N3997 2N3998 Minimum 2N3999 , equivalent to x symbology. FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - , and 2N3997 only); and 2N3997 only); test test condition B (short collector, condition B
API Electronics
Original
diode cc 3053 cc 3053 sd 431 transistor tms 374c MIL-PRF-19500 TRANSISTOR chip die npn transistor MIL-S-19500/374C
Abstract: 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 JAN 2N3996 JT X 2N3996 JT X V 2N3996 2N 3997 JA N 2N3997 JT X 2N3997 JT X V 2N3997 2N3998 JA N 2N3998 JT X 2N3998 JT X V 2N3998 2N3999 JA N 2N3999 JT X 2N3999 -
OCR Scan
2N4305 2N4311 2N4895 2N4896 2N4897 2N4915

2N3997

Abstract: 2N3996 TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices 2N3996 Qualified Level 2N3997 2N3998 MAXIMUM RATINGS Ratings JAN JANTX JANTXV 2N3999 Symbol Value Unit VCEO VCBO VEBO IB 80 100 8.0 0.5 5.0 10(1) 2.0 30 -65 to +200 , 120101 Page 1 of 2 2N3996, 2N3997, 2N3998, 2N3999 JAN SERIES ELECTRICAL CHARACTERISTICS (con't , 2N3997, 2N3999 0.25 2.0 Vdc 0.6 1.2 1.6 Vdc 3.0 12 VCE(sat) VBE(sat
Microsemi
Original

transistor 2N3907

Abstract: t018 transistor 2N3964CSM 2N3965 2N3965CSM 2N3996 2N3996-SM 2N3997 2N3997-SM 2N3998 2N3998-SM 2N3999 2N3999-SM 2N4000 2N4001
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OCR Scan
2N3904DCSM 2N3906CSM transistor 2N3907 t018 transistor 2N3904D 2N39Q4 2N3790X 2N3791 2N3791-SM 2N3792 2N3792-SM 2N3792LP
Abstract: 2N3997 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N3997J) · JANTX level (2N3997JX) · JANTXV level (2N3997JV) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV · Radiation testing (total dose) upon request Applications · High-speed power , www.SEMICOA.com 2N3997 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics Semicoa Semiconductors
Original

2N5002

Abstract: 2N3996 QDDaGbT 7 | T-S3-0? 2N3996 AND 2N3997 sminili 5 AMP HIGH SPEED NPN TRANSISTOR 14830 Valley View , = 8 Vdc) 'ebo 500 10 nAdc uAdc DC Current Gain* 2N3996
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OCR Scan
2N5338 2N5339 2N6192 2N6193 2N5334 2N5337 2N5002

2N3997

Abstract: 2N3997J 2N3997 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · High-speed power switching · Power transistor · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N3997J) · JANTX level (2N3997JX) · JANTXV level (2N3997JV) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method Features , 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3997 Silicon NPN Transistor Data Sheet ELECTRICAL
Semicoa Semiconductors
Original

4116 2n

Abstract: j 5804 V 2N3996 2N3997 J A N 2N 3997 J T X 2N3997 J T X V 2N 3997 2N 3998 J A N 2N3998 J T X 2N3998 J T X V
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OCR Scan
2N2891 2N3186 4116 2n j 5804 2N3920 tr j 5804 2N375 N5339 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715

7182N

Abstract: 2n3920 A N 2 N 3996 J T X 2N 3 99 6 J T X V 2N 3996 2N3997 J A N 2N 3997 J T X 2N3997 J T X V 2 N 3997 2N 3
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OCR Scan
2N2856 7182N 2N567 n4877 2N1721 2N1725 2N1890 2N1974 2N2151 2N2811
Showing first 20 results.