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2N3994 Datasheet

Part Manufacturer Description PDF Type
2N3994 InterFET P-Channel silicon junction field-effect transistor Original
2N3994 InterFET P-Channel Silicon Junction Field-Effect Transistor Original
2N3994 Calogic P-Channel JFET General Purpose Amplifier/Switch Scan
2N3994 Intersil Shortform Data Book 1983/4 Scan
2N3994 Intersil Data Book 1981 Scan
2N3994 Motorola Motorola Semiconductor Datasheet Library Scan
2N3994 Motorola The European Selection Data Book 1976 Scan
2N3994 Motorola European Master Selection Guide 1986 Scan
2N3994 Motorola P-cannel-defletion JFET switching. Scan
2N3994 N/A Basic Transistor and Cross Reference Specification Scan
2N3994 N/A Basic Transistor and Cross Reference Specification Scan
2N3994 N/A Shortform Datasheet & Cross References Data Scan
2N3994 N/A Shortform Transistor PDF Datasheet Scan
2N3994 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3994 N/A Semiconductor Master Cross Reference Guide Scan
2N3994 N/A Shortform Electronic Component Datasheets Scan
2N3994 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3994 National Semiconductor Shortform National Semiconductor Datasheet Scan
2N3994 National Semiconductor Pro-Electron Transistor Datasheets Scan
2N3994 Siliconix MOSPOWER Design Data Book 1983 Scan
Showing first 20 results.

2N3994

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Range Tstfl -65 to +200 °C 96D 82543 D T 2N3993,A 2N3994 CASE 20-03, STYLE 5 TO-72 (TO-206AF) 2 , , vqs = 6.0 vdc, ta = 150°) 2N3993, 2N3993A 2N3994 2N3993, 2N3993A 2N3994 iD(off) - 1.2 1.2 1.0 1.0 nAdc /¿Ade Gate Source Voltage (Vds = -10 Vdc, lD = -1.0 /xAdo) 2N3993, 2N3993A 2N3994 Vgs 4.0 1.0 , > 2N3993, 2N3993A 2N3994 ÌDSS 10 2.0 - mAdc SMALL-SIGNAL CHARACTERISTICS Drain-Source "ON" Resistance rds(on) Ohms (Vgs = 0, id = o,f = 1.0 kHz) 2N3993, 2N3993A â'" 150 2N3994 â'" 300 Forward -
OCR Scan
MPQ2906 MHQ2906 MPQ3303 3N157 2n3994 EQUIVALENT 2n3994 motorola 3N158 3L75SM
Abstract: MOTOROLA SC (XSTRS/R F) 9 6D 82543 D T '35 2N3993,A 2N3994 CASE 20-03, STYLE 5 TO , 2N3994 2N3993, 2N3993A 2N3994 VGS 2N3993, 2N3993A 2N3994 4.0 1.0 - - - 1.2 1.2 nAdc pAdc nAdc , 1.0 kHz) >DSS 2N3993, 2N3993A 2N3994 10 2.0 - mAdc - Ohms 150 300 mmhos 6.0 7.0 4.0 12 12 10 PF - - rds(on) 2N3993, 2N3993A 2N3994 Ivïsi 2N3993 2N3993A 2N3994 Cjss input Capacitance , 1.0 mhz) 2N3993, 2N3994 2N3993A Cf ss 2N3993 2N3993A 2N3994 10%. 16 12 PF - - - 4.5 3.0 -
OCR Scan
Abstract: MOTOROLA SC -CXSTRS/R F> Th DE Ea3ti 7ES4 1 0082543 4 6367254 MOTOROLA SC (XSTRS/R F) 96D 82543 T ~ 3 5 *a5 2N3993,A 2N3994 CA SE 20-03, STYLE 5 TO , Vdc, V q s = = = = 10 Vdc) 2N3993, 2N3993A 2N3994 2N3993, 2N3993A 2N3994 VG S 2N3993, 2N3993A 2N3994 , 0 Vdc, V q s = 0, f = 1.0 kHz) >DSS 2N3993, 2N3993A 2N3994 10 2.0 -· - m Adc rds(on) 2N3993, 2N3993A 2N3994 lYfsl 2N3993 2N3993A 2N3994 Cjss 2N3993, 2N3994 2N3993A Crss 2N3993 2N3993A 2N3994 -
OCR Scan
Abstract: MOTOROLA SC XSTRS/R F 15E D I fa3fa?aSM OOflbbLfl 7 | 2N3993 2N3994 ' CASE , U n ît C haracteristic V(BR)GSS dgo 150°C) iD (off) 2N3993 2N3994 2N3993 2N3994 Vg s 2N3993 2N3994 25 - Vdc - - - - - 1.2 1.2 1.2 1.2 1.0 1.0 9.5 5.5 nA dc /¿Ade nA dc , ) Pulse Test: Pulse W id th =* 100 m s, Duty Cycle « 10%. dss 2N3993 2N3994 1 0 - 2 .0 m A dc - - rds(on) 2N3993 2N3994 lYfsl 2N3993 2N3994 c iss CrSs 2N3993 2N3994 - O hm s 150 300 -
OCR Scan
diodes 415
Abstract: 2N3993, 2N3994 P-Channel JFET FEATURES â'¢ Low rDS(on) - 150ii Max (2N3993) â'¢ High Yfs /Cjss Ratio (High-Frequency Figure-of-Merit) APPLICATIONS Used in high-speed commutator and chopiier applications. Also ideal for "Virtual Gnd" switching; needs no ext. translator circuit to switch ±10 VAC. Can , ORDERING INFORMATION TO-72 WAFER DICE 2N3993 2N3993/W 2N3993/D 2N3994 2N3994/W 2N3994/D ELECTRICAL CHARACTERISTICS @ 25°C free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS* 2N3993 2N3994 -
OCR Scan
5508B 2N3994/W 2N3994/D
Abstract: CALOGIC CORP 2N3993 /2N3994 4ÔE D 1044322 0GÜ02C H T MCGC P-Channel JFET General Purpose Amplifier/Switch * CORPORATION r « lo W ir v U lw O K v 2N3993/2N3994 FEATURES · Lowros(on) « High Yfs/Ciss Ratio (High-Frequency Figure-of-Merit) APPLICATIONS Used in high-speed , 2N3994 X2N3994 ELECTRICAL CHARACTERISTICS (Ta - 25°C unless otherwise specified) SYMBOL BVgss Idgo Idss , (Note 3) 45 4 9.5 150 12 16 4 1 5.5 300 10 16 5 25 -1.2 -1.2 2N3994 MIN MAX UNITS V nA mA Package -
OCR Scan
2N399 2N3993/2N3994
Abstract: ' CALOGIC CORP 4Ã"E D â  1&HH32E OOOngn T mCGC I P-Channel JFET g General Purpose Amplifier/Switch o> n CM -T-Zl-ZS 2N3993/2N3994 FEATURES â'¢ Low ros(on) â'¢ High Yfs/Ciss Ratio (High-Frequency Figure-of-Merit) APPLICATIONS Used in high-spaed commutator and chopper applications. Also ideal , Hermetic TO-72 X2N3993 Sorted Chips in Carriers 2N3994 Hermetic TO-72 X2N3994 Sorted Chips in Carriers , » 25°C unless otherwise specified) SYMBOL PARAMETER 2N3993 2N3994 UNITS TEST CONDITIONS (Note 3 -
OCR Scan
Abstract: TYPES 2N3993, 2N3993A. 2N3994. 2N3994A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 6 8 1 1 1 1 5 , O C T O B E R 1 9 6 8 F O R H IG H -S P EED CO M M UTATO R AND CH O PPER A P P LIC A T IO N S · · · . Law rds(onl . . . 150 a Max (2N3993, 2N3993A) High lyf ! , 78222 TYPES 2N3993, 2N3993A. 2N3994. 2N3994A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS , d g = -1 5 V . T a * 1 5 0 °C V d s- 0 Is = 0 2N3993 2N3993A 2N3994 2N3994A MIN M AX MIN M AX MIN -
OCR Scan
S10VTA
Abstract: Databook.fxp 1/13/99 2:09 PM Page B-8 B-8 01/99 2N3994, 2N3994A P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ High Speed Commutators At 25°C free air temperature: Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N3994 Static , Drain Cutoff Current ID(OFF) Max 2N3994A Min Max Process PJ99 Unit 25 5.5 ­2 InterFET
Original
PJ99
Abstract: B8 9 -9 7 2N3994, 2N3994A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR â'¢ CHOPPERS â'¢ HIGH SPEED COMMUTATORS Absolute maximum ratings at Ta = 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage 25 V 25 V Continuous Forward Gate Current Continuous Device Power DIssipation - 1 0 mA 300 mW Power Derating 2N3994A 2N3994 At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V( b r )g s s 25 Gate -
OCR Scan
Abstract: B8 2N3994, 2N3994A P -C H AN N EL SILICO N JUNCTION FIELD-EFFECT TRANSISTOR 9 -9 7 · CHOPPERS · HIGH SPEED COMMUTATORS Absolute maximum ratings at Ta = 25"C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 25 V 25 V - 1 0 mA 300 mW 2.4 mW/°C 2N3994 A t 2 5°C free air temperature: 2N3994A Min 25 Process PJ99 Unit V Ig = 1 Static Electrical Characteristics Gate Source Breakdown Voltage Gate -
OCR Scan
Abstract: 30 Nch Junction TO-92 100 0.5 3 1.0 5 30 3.5 30 Nch Junction TO-92 J 2N3993 2N3994 2N4091 2N4092 , dB pF V ^3993 6 12 4.0 9.5 â'ž _ . 4.5 25 Pch Junction TO-72 2N3994 4 10 1.0 5.5 - - 5.0 25 -
OCR Scan
2N5458 BF245C 2N4221 motorola MPF102 switch application mpf102 fet FET 2N5459 MFE131 FET 5457 2N4220 2N4221 2N4222 2N5459 2N5460
Abstract: Case BVgss Ciss Type Style Geometry Min Max Number (TO) (V) (pF) 2N3382 2N3384 2N3386 2N3993 2N3993A 2N3994 2N3994A 2N5018 2N5019 2N5114 2N5115 2N5116 J174 J175 J176 J177 U304 U305 U306 UC401 UC451 UC807 72 72 72 72 72 72 72 18 18 18 18 18 92 92 92 92 18 18 18 72 18 18 FP5.3 FP7.3 FP5.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP5.3 FP7.3 FP7.3 30 30 30 25 25 25 Solitron Devices
Original
DSASW0036854 J176 J174 equivalent U305
Abstract: LOW P O W ER FIELD EFFEC T T R A N S IS T O R S Igss or ·Idgo Max Type Number 2N3382 2N3384 2N3386 2N3993 2N3993A 2N3994 2N3994A 2N5018 2N5019 2N5114« 2N5115* 2N5116» 1174 J17S 1176 J177 U304 U305 U306 UC401 UC451 UC807 Case Style ( T O - ) Geometry 72 72 72 72 72 72 72 18 18 18 18 18 92 92 92 92 18 18 18 72 18 18 FP5.3 FP7.3 FP5.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FPS.3 FP7.3 FP7.3 BVgss Min (V) 30 30 30 25 25 25 25 30 30 30 30 30 -
OCR Scan
Abstract: 30 Nch Junction TO-92 100 0.5 3 1.0 5 30 3.5 30 Nch Junction TO-92 J 2N3993 2N3994 2N4091 2N4092 -
OCR Scan
2N4093 2N4351 2N4352 2N4391 2N4392 2N4393 2N5640 MOTOROLA Motorola 2n4393 2N4393 motorola 2N5640 2N4391 MOTOROLA 2N4352 FET
Abstract: G 30 PJ99 Process 9-97 SILICON JUNCTION FIELD-EFFECT TRANSISTOR · GENERAL PURPOSE AMPLIFIER · ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, Ts 10 mA +150°C -65°C to +175°C Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P Die Size = 0 .0 2 1 " X 0 .0 2 1" All -
OCR Scan
j174 transistor 000D6M3
Abstract: »®[D)(yj©ïr ©ättä[l®( LO W P O W E R FIELD EFFECT T R A N S IS T O R S el [ F i n n Type Number 2N3382 2N3384 2N3386 2N3993 2N3993A 2N3994 2N3994A 2N5018 2N5019 2N5114» 2N5115» 2N5116» J174 J175 J176 1177 U304 U305 U306 UC401 UC451 UC807 Case Style ( T O - ) Geometry 72 72 72 72 72 72 72 18 18 18 18 18 92 92 92 92 18 18 18 72 18 18 FP5.3 FP7.3 FP5.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP7.3 FP5.3 FP7.3 FP7.3 BVgss Min (V) 30 30 30 25 25 25 25 30 30 -
OCR Scan
Abstract: N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET 2N4857JANTXV 2N3994A P JFET 2N3382 H -
OCR Scan
2N4381 2N4382 2N3970 2N4302 2N4303 2N4304 JFET 2N4303 "cross reference" 2n4393 replacement 2n4416 jfet J-FET 2N3909 2N4340 2N3909A 2N4341 2N3921 3N163
Abstract: F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C ­ 65°C to +175°C G S-D S-D G Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 InterFET
Original
J177 equivalent j177 equivalent transistor
Abstract: 9.5 â'ž _ . 4.5 25 Pch Junction TO-72 2N3994 4 10 1.0 5.5 - - 5.0 25 Pch Junction TO-72 2N4220 1 -
OCR Scan
2N3822 2N3823 2N3824 2N4416 2N5457 2N5484 MPF102 mixer 3N223 3N128 dual gate mfe130 MPF102 2N3821
Abstract: N JFET 2N4857JANTX 2N3994 P JFET 2N3382 Q 2N4857JANTXV N JFET 2N4857JANTXV 2N3994A P JFET 2N3382 H -
OCR Scan
MPF970 MPF971 2N4859A 2N4856A 2N4856 N4859 P-Channel Depletion Mode FET P-Channel Depletion Mosfets JFETs Junction FETs MPF4091 N3993 N3994
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