NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SEMICONDUCTOR 2N3906U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZA 1 2 Item Marking Description Device Mark ZA 2N3906U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C) 4 (D) 5 (E) 6 (F) 7 (G) 8 (H) 9 (I) 0 (J) 2nd Character A (1) B ... | Original |
1 pages, |
marking za 2N3906U 2N3906U abstract |
| Abstract: SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES * Low Leakage Current : Icex=-50nA(Max.), IBL=-50nA(Max. , 2N3906U ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT , 2000. 12. 7 Revision No : 1 KEC 2/4 2N3906U le - Vce llFE ~~ le W « « & u « o H O o o -100 , -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) 2000. 12. 7 Revision No : 1 KEC 3/4 2N3906U ... | OCR Scan |
4 pages, |
2N3906U 2N3904U 1N916 2N3906U abstract |
| Abstract: SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B M M DIM A B C MILLIMETERS _ 2.00 + 0.20 _ 1.25 + , Type Name ZA 1/4 2N3906U ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL , , Duty Cycle 2%. 2008. 8. 29 Revision No : 4 2/4 2N3906U I C - V CE -0.9 COLLECTOR , =1mA COLLECTOR-EMITTER VOLTAGE VCE (V) 2N3906U 10 C ob C ib 5 3 1 0.5 -0.1 ... | Original |
4 pages, |
2N3906U 2N3904U 1N916 datasheet abstract |
| Abstract: SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B M M FEATURES DIM A B C D E D 3 1 G , /4 2N3906U ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION , 300 S, Duty Cycle 2%. 2002. 2. 20 Revision No : 3 2/4 2N3906U I C - V CE -0.9 , C 30 I C =1mA COLLECTOR-EMITTER VOLTAGE VCE (V) 2N3906U Revision No : 3 -10 -0.1 ... | Original |
4 pages, |
2N3906U 2N3904U 1N916 datasheet abstract |
| Abstract: KEC SEMICONDUCTOR 2N3906U KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Icex= -50nA(Max.), IBi=-50nA(Max.) @VCE=-30V, Veb=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VcE(Sat)=-0.4V(Max.) @Ic=-50mA, IB=-5mA. • Low Collector Output Capacitance , Revision No : 0 KEC 1/2 2N3906U ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST ... | OCR Scan |
2 pages, |
2N3906U 2N3906U abstract |
| Abstract: 2N3906U. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING ... | Original |
4 pages, |
2N3906U 2N3904U 1N916 datasheet abstract |
| Abstract: Saturation Voltage 0.00-0.10 0.70 _ 0.42 + 0.10 L M N 0.10 MIN Complementary to 2N3906U. 1. ... | Original |
4 pages, |
2N3906U 2N3904U 1N916 datasheet abstract |
| Abstract: SEMICONDUCTOR TECHNICAL DATA 2N3904U 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES * Low Leakage Current : IcEx=50nA(Max.), IBL=50nA(Max.) @Vce=30V, Veb=3V. * Excellent DC Current Gain Linearity. * Low Saturation Voltage : VcE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA. * Low Collector Output Capacitance : C0b=4pF(Max.) @VCb=5V. * Complementary to 2N3906U. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 60 V ... | OCR Scan |
4 pages, |
2N3906U 2N3904U 1N916 2N3904U abstract |
| Abstract: _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA 2N3904U 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES * Low Leakage Current : IcEx=50nA(Max.), IBL=50nA(Max.) @Vce=30V, Veb=3V. * Excellent DC Current Gain Linearity. * Low Saturation Voltage : VcE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA. * Low Collector Output Capacitance : C0b=4pF(Max.) @VCb=5V. * Complementary to 2N3906U. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT ... | OCR Scan |
4 pages, |
ST30 2N3906U 2N3904U 20MS 1N916 2N3904U abstract |
| Abstract: KRC405 KRC405 EMA7 Rohm KRA569E KRA569E GA1L4M NEC KRC404 KRC404 MMBT3906AWT1 MMBT3906AWT1 Motorola 2N3906U ... | Original |
7 pages, |
KTC2028 KTD2499 BA1F4M 2SD1131 BC550 MOTOROLA 2SD972 KTC4369 2SC2320 BC238 MOTOROLA 2SA1019 2N3906 MOTOROLA 2SC2320 datasheet 2SD1960 2sc1983 2N2222/A 2N2369/A 2N2222/A abstract |
| Abstract: UTC M2950/2951 M2950/2951 LINEAR INTEGRATED CIRCUIT 250 mA LOW-DROPOUT VOLTAGE REGULATOR 1 DESCRIPTION TO-92 The UTC M2950/2951 M2950/2951 is a monolithic integrated voltage regulator with low dropout voltage, and low quiescent current. It includes many features that suitable for different applications. Available in 3-pin TO-92, DIP-8 and SOP-8 packages. SOP-8 FEATURES DIP-8 *High accuracy 2.5, 3.0, 3.3, 3.6 or 5V fixed output for TO-92, SOP-8 package. *Extremely low quiescent curre ... | Original |
7 pages, |
M2950 IL-250 2951 M2951 M2950/2951 M2950/2951 abstract |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FJX3906 | FJX3906TF Buy | 2N3906U Buy | Korea Electronics Co Ltd | Direct | Small Signal | PNP Epitaxial Silicon Transistor |
| KEC Part | Industry Part | Manufacturer | Category | Description |
| 2N3906U Buy | MMBT3906AWT1 Buy | On Semiconductor | BJT | Switching Transistor |
| 2N3906U Buy | UMT3906 Buy | Rohm | BJT | Switching Transistor |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| MMBT3906WT1G Buy | 2N3906U Buy | Korea Electronics | Close |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SA1586 Buy | 2N3906U Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification - USM - SOT-323 | Transistors |
| Part | Similar Part | Notes |