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Part Manufacturer Description Datasheet BUY
JAN2N3867 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANS2N3867 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANTXV2N3867S Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
JAN2N3867S Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
JANTXV2N3867 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANTX2N3867S Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy

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Part : 2N3867 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $5.49 Price Each : $6.29
Part : JANTX2N3867 Supplier : Microsemi Manufacturer : Future Electronics Stock : 350 Best Price : $26.82 Price Each : $28.45
Part : 2N3867 Supplier : Advanced Semiconductor Manufacturer : Bristol Electronics Stock : 10 Best Price : $2.3296 Price Each : $3.5840
Part : 2N3867 Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 17,463 Best Price : - Price Each : -
Part : JANTX2N3867 Supplier : Teledyne Relays Manufacturer : Bristol Electronics Stock : 43 Best Price : $7.9688 Price Each : $12.75
Part : JNTX2N3867 Supplier : - Manufacturer : Bristol Electronics Stock : 9 Best Price : - Price Each : -
Part : JX2N3867 Supplier : New England Semiconductor Manufacturer : Bristol Electronics Stock : 2 Best Price : - Price Each : -
Part : 2N3867 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 89 Best Price : - Price Each : -
Part : JANTX2N3867 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 39 Best Price : - Price Each : -
Part : JANTX2N3867 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 1,608 Best Price : $33.0800 Price Each : $33.0800
Part : JANTX2N3867 Supplier : Microsemi Manufacturer : New Advantage Stock : 263 Best Price : $29.77 Price Each : $29.77
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2N3867 Datasheet

Part Manufacturer Description PDF Type
2N3867 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 Original
2N3867 Continental Device India PNP SILICON POWER SWITCHING TRANSISTOR, Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications, TO-39 Original
2N3867 Microsemi PNP Switching Silicon Transistor Original
2N3867 Microsemi Silicon PNP Power Transistors - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 Original
2N3867 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 Original
2N3867 API Electronics 5 Amps PNP Transistors Scan
2N3867 API Electronics 5 AMPS PNP Transistors Scan
2N3867 Central Semiconductor PNP METAL CAN Transistors Scan
2N3867 Crimson Semiconductor Transistor Selection Guide Scan
2N3867 Diode Transistor Transistor Short Form Data Scan
2N3867 General Diode Transistor Selection Guide Scan
2N3867 General Transistor Power Transistor Selection Guide Scan
2N3867 Motorola Motorola Semiconductor Datasheet Library Scan
2N3867 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N3867 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3867 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3867 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3867 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3867 N/A Transistor Shortform Datasheet & Cross References Scan
2N3867 N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

2N3867

Catalog Datasheet MFG & Type PDF Document Tags

2N3867U4

Abstract: 2N3868S JANTXV , SILICON, LOW POWER TYPES 2N3867, 2N3867S, 2N3867U4, 2N3868, 2N3868S, AND 2N3868U4, JAN, JANTX, JANTXV , ton 2N3867 2N3868 2N3867 2N3868 2N3867S 2N3868S 2N3867S 2N3968S 2N3867U4 2N3868U4 2N3867U4 , Subgroup 2 2N3867, 2N3867S, 2N3867U4 2N3868, 2N3868S, 2N3868U4 °C/W ZJX ICBO1 100 100 , , IC = 1.5 A dc, pulsed (see 4.5.1) hFE2 2N3867, 2N3867S, 2N3867U4 2N3868, 2N3868S, 2N3868U4 Forward-current transfer ratio µA dc hFE1 2N3867, 2N3867S, 2N3867U4 2N3868, 2N3868S, 2N3868U4
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Original
2N3868S JANTXV 2N3868S JAN MIL-PRF-19500/350L MIL-PRF-19500/350K MIL-PRF-19500 JANHCB2N3867 JANKCB2N3867 JANHCB2N3868

2N3868

Abstract: 2N3867S TECHNICAL DATA 2N3867 JAN, JTX, JTXV 2N3867S JAN, JTX, JTXV 2N3868 JAN, JTX, JTXV 2N3868S JAN , ) Operating & Storage Junction Temperature Range Symbol 2N3867 2N3867S 2N3868 2N3868S Units , , Tstg 0 -65 to +200 Symbol 2N3867, 2N3868 TO-5 C Max. 17.5 THERMAL , > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C RJC 2N3867S, 2N3868S TO-39 (TO-205AD) Unit , Min. Max. Unit 2N3867, S 2N3868, S V(BR)CBO 40 60 Vdc 2N3867, S 2N3868, S V
New England Semiconductor
Original
JTX 2N3867 MIL-PRF-19500/350

2N3868

Abstract: 2n3867 Qualified Level 2N3867 2N3867S JAN JANTX JANTXV 2N3868 2N3868S MAXIMUM RATINGS Ratings , VCBO VEBO IC PT TOP, TSTG 2N3867 2N3867S 2N3868 2N3868S 40 40 60 60 4.0 3.0 1.0 10 -55 to +200 Unit Vdc Vdc Vdc Adc W W 0 C TO-5* 2N3867, 2N3868 THERMAL , -39* (TO-205AD) 2N3867S, 2N3868S 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3867, S
Microsemi
Original
2N3868SJAN

2N3868

Abstract: 2N3867 per MIL-PRF-19500/350 DEVICES LEVELS 2N3867 2N3868 JAN JANTX JANTXV JANS 2N3867S , Symbol 2N3867 2N3868 Unit Collector-Base Voltage VCBO 40 60 Vdc Collector-Emitter , TO-5 * 2N3867, 2N3868 Note: * Electrical characteristics for "S" suffix devices are identical to , / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current 2N3867, S IC = 10Adc 2N3868, S Collector-Base Cutoff Current VCB = 40Vdc 2N3867, S VCB = 60Vdc 2N3868, S Emitter-Base
Microsemi
Original
ic 353 2N3868 JANTXV equivalent TP205AD T4-LDS-0170
Abstract: per MIL-PRF-19500/350 DEVICES LEVELS 2N3867 2N3868 JAN JANTX JANTXV JANS 2N3867S , Symbol 2N3867 2N3868 Unit Collector-Base Voltage VCBO 40 60 Vdc Collector-Emitter , , Junction-to-Ambient TO-5 * 2N3867, 2N3868 Note: * Electrical characteristics for â'Sâ' suffix devices are , noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current 2N3867, S IC = 10μAdc 2N3868, S Collector-Base Cutoff Current VCB = 40Vdc 2N3867, S VCB = 60Vdc 2N3868 Microsemi
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2N6303

Abstract: 2N3868 P P C PRODUCTS CORP EIE D â  bfiSbni 0000003 â¡ 2N3867 2N3868 2N6303 ^ = M^^^^fmicmfm},. j ^ Power Transistors APPLICATIONS â'¢ High-Speed Switching â'¢ Medium-Current Switching â'¢ High-Frequency Amplifiers FEATURES â'¢ Collector-Emitter Sustaining Voltage: VCEO(sus)=40 Vdc (Min) â'" 2N3867 , '" 2N3867 = 30-150 @ lc= 1.5 Adc â'" 2N3868, 2N6303 â'¢ Low Collector-Emitter Saturation Voltage: VcE(sat , SYMBOL CHARACTERISTIC 2N3867 2N3868 2N6303 UNITS VCEO* Collector-Emitter Voltage 40 60 80 Vdc VCB
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OCR Scan
LC-25 FR90 TWFC

2N3720

Abstract: 2n3867 2N3867.2N3868, 2N6303 â'¢ High Current-Gain â'" Bandwidth Product â'" f t = 90 MHz (Typ) â'¢ 2N3867 JAN and , , 2N3720 2N3867, 2N3868 2N6303 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON PNP POWER , LTS 6 WATTS - 2N3719.2N3720 - 2N3867 - 2N3868.2N6303 â'¢ Low Collector-Emitter Saturation , | b3b 72 54 DQfl447fi 7 | 2N3719, 2N3720, 2N3867, 2N3868, 2N6303 , ^ T - 3 7 - / 7 â'¢ E , °C) - - Emitter-Base Breakdown Voltage (IE 3 100#iAdc, |q = 0) 40 60 80 - 2N3867
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OCR Scan
2N3967
Abstract: , 80 2N3867 3N3868 2N6303 CollKtor-But Brtikdown Volugi (1C â'¢ 100 M Adc, IE -01 3N3867 , 40 30 25 20 20 2N3867 2N3868. 2N6303 2N3867 2N3868, 2N6303 2N3867 2N3868. 2N6303 2N3867 New Jersey Semiconductor
Original
3N17II 2N386B

2N3867

Abstract: POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium , Page 1 of 4 PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package , Page 2 of 4 2N3867 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F , Data Sheet Page 3 of 4 Notes 2N3867 TO-39 Metal Can Package Disclaimer The product , 2N3867Rev060402E Continental Device India Limited Data Sheet Page 4 of 4 Continental Device India
Continental Device India
Original
ISO/TS16949 C-120 2N3867R 060402E
Abstract: SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium , Page 1 of 4 PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package ELECTRICAL , 2N3867 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J K L , 13.5" 32K 40 kgs Data Sheet Page 3 of 4 Notes 2N3867 TO-39 Metal Can Package , , 5141 1119 email@cdil.com www.cdilsemi.com 2N3867Rev060402E Continental Device India Limited Continental Device India
Original

2N3867

Abstract: SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium , Page 1 of 4 PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package , Page 2 of 4 2N3867 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F , Data Sheet Page 3 of 4 Notes 2N3867 TO-39 Metal Can Package Disclaimer The product , 2N3867Rev060402E Continental Device India Limited Data Sheet Page 4 of 4 Continental Device India
Continental Device India
Original
Abstract: # QSC/L- 000019.3 PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package , SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Tc=25º C unless , Sheet Page 2 of 4 2N3867 TO-39 Metal Can Package TO-39 Metal Can Package A B D G 2 1 3 , 48 DEG E K C Page 3 of 4 Notes 2N3867 TO-39 Metal Can Package Disclaimer The , www.cdil.com 2N3867Rev060402E Continental Device India Limited Data Sheet Page 4 of 4 Continental Device India
Original
Abstract: 2N3867 w w w. c e n t r a l s e m i . c o m SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3867 is a silicon PNP power transistor designed for high speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-5 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage , V 200 120 1000 35 65 325 75 MHz pF pF ns ns ns ns R0 (8-May 2013) 2N3867 Central Semiconductor
Original

2N3867

Abstract: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3867 APPLICATIONS: · · · High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: · · · · Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc , mW/° C 1.0 Watts 5.71 mW/° C 29 175 ° C/W ° C/W 2N3867 ELECTRICAL , Units Vdc Vdc Vdc Vdc Vdc 2N3867 PACKAGE MECHANICAL DATA: 1.500 [38.10] MIN .031 [.787
Microsemi
Original
MSC1059

2N3868

Abstract: teledyne fet TELEDYNE C011P0NENTS 2ÖE D ù ì l T t i Q S GGQbS37 S r-3 -i-i-i I PNP 3 AMP POWER TRANSISTORS GEOMETRY 505 2N3867 2N3868 2N6303 · HIGH SPEED · VCEO(sus) to 80V · HIGH fT MAXIMUM RATINGS PARAMETER Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage DC Collector Current Power Dissipation @Ta < 25°C Linear Derating Factor Power Dissipation @TC
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OCR Scan
2N3866 teledyne fet teledyne 2n3867 CFO20 003-----J 2N3067 2N38681 2N63031 2N38671 100KH
Abstract: 2N3867+JANTXV Transistors Si PNP Power BJT Military/High-RelY V(BR)CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 @I(B) (A) (Test Condition)250m h(FE) Min. Current gain.40 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition)100m American Microsemiconductor
Original

transistor 2N3907

Abstract: t018 transistor SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A 2N3805ADCSM 2N3805DCSM 2N3806 2N3806DCSM 2N3807 2N3807DCSM 2N3808 2N3808DCSM 2N3809 2N3809DCSM 2N3810 2N381ODCSM 2N3811 2N3811A 2N3811ADCSM 2N3811DCSM 2N3829 2N3830 2N3830L 2N3831 2N3867 2N3867-SM 2N3868 2N3868-SM 2N3879 2N3879SM 2N3902 2N39Q4CSM 2N3904DCSM
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OCR Scan
2N3906CSM transistor 2N3907 t018 transistor 2N3904D 2N39Q4 DUAL TRANSISTOR 2N3905CSM 2N3907 2N3917 2N3918 2N3931
Abstract: 2N3867 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 @I(B) (A) (Test Condition)250m h(FE) Min. Current gain.40 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition)100m @V(CE American Microsemiconductor
Original

2N3867

Abstract: 2N3867 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021) dia. IC = 1A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications
Semelab
Original

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N3767 YES YES YES /518A 10-A 2N3846 YES YES X /412 11-C 2N3847 YES YES X /412 11-C 2N3867 YES YES YES , 3.0A Package TO-66 TO-66 TO-5 Rated Collector To Emitter Voltage (VCEO) 40V 2N3867 60V 2N3740
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OCR Scan
2N389 2N1479 2N1489 2N1716 2N6352 2N6350 POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 pnp 400v 10a 2N1468 2NXXXX T-33- D0D07 19S00 2N424
Showing first 20 results.