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2N3823 equivalent

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: : (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Symbol 2N3821 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage , ) Parameters / Test Conditions Gate-Source Breakdown Voltage 2N3821, 2N3822 VDS = 0, IG = 1.0A dc 2N3823 Microsemi
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2N3822 equivalent 2N3823 fet datasheet L-PRF-19500/375 100MH 200MH 105MH T4-LDS-0005
Abstract: Current Power Dissipation TA = +25°C (1) MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent Symbol VGSR VDS VDG IGF PT Tj, Tstg 2N3821 2N3822 50 50 50 10 300 2N3823 30 30 30 Unit , ) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise , / Test Conditions Gate-Source Breakdown Voltage 2N3821, 2N3822 VDS = 0, IG = 1.0uA dc 2N3823 Gate Reverse Microsemi
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2N3823 JANTX MX2N3823
Abstract: Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Symbol 2N3821, UB 2N3822, UB 2N3823, UB Gate-Source Voltage VGSR , VDS = 0, IG = 1.0μA dc 2N3821 / UB 2N3822 / UB 2N3823 / UB Gate Reverse Current VDS = 0, VGS Microsemi
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Abstract: Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Symbol 2N3821, UB 2N3822, UB 2N3823, UB Gate-Source Voltage VGSR , , IG = 1.0A dc 2N3821 / UB 2N3822 / UB 2N3823 / UB Gate Reverse Current VDS = 0, VGS = 30V dc Microsemi
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transistor 2N3823 TO72 package n-channel jfet 2N3822 2N382 2N3821 JANTXV 2n3821 fet
Abstract: , FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND , 2N3822 2N3823 2N3822UB 2N3823UB 2N3821 2N3821UB VGSR 2N3822 2N3822UB 2N3823 2N3823UB , Ciss Crss VDS = 15 V VDS = 15 V dc dc VGS = 0 VGS = 0 100 kHz f 1 MHz 100 kHz 2N3823 2N3821 2N3822 2N3823 2N3823UB f 1 MHz 2N3821UB 2N3822UB 2N3823UB 2N3821 2N3821UB 2N3823 , 1 M f = 1 kHz f = 105 MHz 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3822 2N3822UB -
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2N3823 Model MIL-PRF-19500/375G MIL-PRF-19500/375F MIL-PRF-19500
Abstract: Databook.fxp 1/13/99 2:09 PM Page B-4 B-4 01/99 2N3823, 2N3824 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: 2N3823 Static Electrical , Equivalent Short Circuit Input Noise Voltage eN ¯ 200 nV/Hz VDS = 15V, VGS = ØV f = 10 Hz InterFET
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transistor 2N3824 2N3824 equivalent 4B401 NJ32
Abstract: -i Ji / At â'¢ â'¢ » I : 2N3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION J LOW NOISE FIGURE AND GOOD POWER GAIN AT FREQUENCY UP TO 450MHz. â'¢ THE DEVICE IS ALSO SUITABLE FOR ANALOG SWITCHING" WHERE LOW JUNCTION CAPACITANCE IS ESSENTIAL. D o CASE TO-72 r G - â'¢ - ? ; > '»v â , Conductance Spot Noise Figure Equivalent Noise Input Voltage c » i ♦ i "On" Resistance MIN TYP MAX UNIT mU -
OCR Scan
450MH BO9477 VDS-15V 400MH T4-250C
Abstract: B4 9-97 2N3823, 2N3824 N-CHAN NEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR VHF AMPLIFIERS SMALL SIGNAL AMPLIFIERS Absolute maximum ratings at TA = 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N3823 At 25°C free air temperature: Min Static Electrical Characteristics Max 2N3824 Min , V ,V Gs = 0 V f = 1 MHz Equivalent Short Circuit Input Noise Voltage 6n 200 nV/VHz Vd -
OCR Scan
SMP3823 SMP3824 0D075M
Abstract: Figure-of-Merit) 2N3823 FO R V H F A M P L IF IE R A N D M IX E R A P P LIC A T IO N S · · · Low Noise Figure , . 50 V 50 V 2N3823 30 V 30 V -5 0 V -3 0 V - 10 m A - 300 mW- > -6 5 °C t o 2 0 0 c C , = 5 Hz 5 dB U N IT Vn Equivalent Input Noise Voitage Noise Bandwidth = 5 Hz 200 , 2N3823 ·electrical characteristics at 2 5 °C free-air temperature (unless otherwise noted) PARAM ETER V , Common-Source Spot Noise Figure V D S = 1 5 V , V G S = 0, R G = 1 KÍ2, f = 100 MHz 2N3823 M AX 2.5 U N IT dB -
OCR Scan
Abstract:  2N3823 n-channel junction field effect transistor ; »J."rmny1 'tfwwuiiv '^-»'i-yw ^ ^ â r : i t > zz^ t. THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION J LOW NOISE FIGURE AND GOOD POWER GAIN AT FREQUENCY UP TO 450MHz. â'¢ THE DEVICE IS ALSO SUITABLE FOR ANALOG SWITCHING'where low JUNCTION CAPACITANCE IS ESSENTIAL , VDS=15V lD-5mA f=400MHz Equivalent Noise Input Voltage S * ' e' nV/Jsz yDS=15V iD-lmA folOOHz "On" -
OCR Scan
I750C S320/2
Abstract: combining with the device to cause an amplifier to be unstable. For example, consider the 2N3823 at 200 , device. 200 MHz Amplifier Figure 1 shows a 200 MHz common gate amplifier using a 2N3823. For these conditions, the 2N3823 has a theoretical GT of 16.8 db, an input admittance of 4.2 + j 1.6 mmhos, and an , resonance, the 2N3823 has an input admittance of 5.04 + j 2.98 mmho and an output susceptance of 1.91 mmho , terminations, an expression equivalent to MAG is solved for gain. This procedure was investigated with Motorola
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AN423 AN478A AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 Y212 AN423/D
Abstract: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CASE T O-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT F R E ­ QUENCY UP TO 450MHz. â'¢ THE DEVICE IS ALSO SUITABLE FOR ANALOG SWITCHING' WHERE LOW JUNCTION CAPACITANCE IS ESSENTIAL. D THE S,D,G TERMINALS ARE ELECTRICALLY , y-RARAMETER AT â'™ 8 h V/a/h z 170 * Equivalent Noise Input Voltage ¿1 VDS=15V Sis -
OCR Scan
1750C
Abstract: TRANSISTORS BIPOLAR Catalog Number Direct Commercial Equivalent Mat. Appli. Polarity Power Diss. @ 25° C Free Air 'T Typical MHz vCBO VCEQ V V vEBO V 'C Max is Max hFE ©VCE; V m A 'CBO at max , - Diss. V V mhos Case Number Equivalent Application nel nel mW (max) (max) min/max Style 276-2028 , purpose X 360 25 25 2. On/6.5 m '"092 276-2036 2N3823 RF Amp to 200 MHz X 300 30 30 3.5m/6.5m "072 , UNIJUNCTION Catalog Direct Comm. Max Power rgB Tf Ve!B1 Vqb1 'p Case Number [Equivalent Diss. (max) (max -
OCR Scan
2SB22/ORN 2N1305 MJ2955 equivalent MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent N1304 2SD187 2SA221 2SB22/YEL 2SB407
Abstract: 000 mmhos 5 mA) yields a stage gain of about 60 Since the equivalent capacitance looking into the , features very low input loading and reduction of feedback to almost zero The 2N3823 is used because of , because the 2N3823 JFET circuit loading does not vary with temperature 0 to 360 Phase Shifter Each National Semiconductor
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LM103 zener jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 2N4339 2N4393 AN-32 C1995 RRD-B30M115 2N4416
Abstract: FIELD EFFECT TRANSISTORS, SILICON, N CHANNEL TRANSISTORS A EFFET DE CHAMP, SILICIUM, CANAL N 2N3821 2N3822 2N3823 HF amplification Amplification HF LF amplification Amplification BF Maximum power dissipation Dissipation de puissance maximale tot (mW) IDSS 0,5 â'¢ 2,5 mA 2- 10 mA 4 - 20 mA 2N 3821 2N 3822 2N 3823 Y21s 1,5 - 4,5 mS 3 - 6,5 mS 3,5 - 6,5 mS 2N 3821 2N 3822 2N 3823 C12ss 3 , VDS= 15 V VQS= 0 Rq = 1 ki2 f = 100 MHz F 2N 3823 2,5 dB Equivalent reverse voltage Tension à -
OCR Scan
2n 3821 2n EQUIVALENT
Abstract: in the standard epoxy T0-106 package. It is functionally equivalent to the unijunction transistor , 0.1 4 20 3000 100 6 6 3 30762g 2N3823 30 0.5 4 20 3200 200 8 6 2 31363x 2N5485 25 1 4 10 3000 400 -
OCR Scan
2N4302 2N4303 MEU22 MEU21 MPF106 U1897E 2N5458 equivalent mpf105 equivalent mpf103 2N5457 equivalent MEF101 19341B MEF102 31291X MEF103 19342X
Abstract: 2N3823, 2N3824 2N4222, 2N4222A G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate , Capacitance Crss 1.3 3 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Noise Voltage eN ¯ , = 1 MHz Equivalent Noise Voltage eN ¯ 10 1000 N. Shiloh Road, Garland, TX 75042 (972 InterFET
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2N5021 2N5460 maximum idss transistor transistor 2N5461 2N5020 2N5461 2N5462
Abstract: industry-accepted definition of LSI, apparently when the equivalent circuit of an IC contains more than 1,000 active , a necessary parameter. A useful equivalent circuit for a FET is the distributed constant network , Equivalent Circuit Figure 17 sharp breakoown Examples of Soft Knee and Sharp Knee Breakdown Figure 18 ) 1979 , that there is a difference in the test conditions specified for the N-Channel 2N3823 and theP-Channel 2N3329. The gate voltage for the 2N3823 is established as zero. This means that gfs is measured at ID = -
OCR Scan
P-Channel Depletion-Mode P-Channel Depletion Mode FET FET E202 2N3631 Junction FETs JFETs P-Channel Depletion Mosfets
Abstract: ° C"s+ Ca/T'Ca, FIG. 4 F.E.T. SMALL SIGNAL EQUIVALENT CIRCUIT table Parameter 4. f . e.t . d , '" 1 Vgs/I d Frequency bandwidth tod (Ml.,) 1 t â'ž. Cammen saurce shart-cireuit equivalent input naise voltage ^.V/V cycle' Common source opan-circuit equivalent input noisa V gs/I d , ); Transfer Characteristics (b) 21 +v Fig. 3. Self-bias far FET (o) Equivalent C ircu it far Bias , Combination of Fixed- ond Self-bias (a); Equivalent C ircuit For Either Bias Netw ork (b); Graphical Analysis -
OCR Scan
2N3575 TIS69 equivalent 2N4856 2N4861 2N486 2N5045 2N5046 2N5047
Abstract: 2N3330 2N3970 2N3823 2N3823 TN4338 TN4340 TN4341 2N4092 2N4091 2N4092 2N4220A 2N4220A 2N4857 , 2N3822 2N3970 2N3971 2N3823 U1837E 2N4416 U1994E TN4338 TN4340 TN4341 2N4092 TN4340 TN4341 , 2N4303 U1994E 2N3823 2N3823 2N2609 2N4093 2N4092 2N4091 2N3970 2N3970 2N4978 2N4859 2N4977 , 2N3823 2N3970 2N3970 2N4224 2N4220 2N4224 2N4220 2N3069 2N3070 2N3069 2N3070 2N3958 2N4445 , 2N5198 2N5199 2N3823 2N4859 U1898E 2N4302 U1837E U1897E U1898E U1899E 2N5543 2N5544 2N5486 -
OCR Scan
equivalent transistor e176 E421 fet 2N4360 equivalent transistors E112 jfet J2N2608 J2N3823
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