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Part : 2N3771G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $2.34 Price Each : $3.72
Part : 2N3771G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $1.9310 Price Each : $3.7940
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Part : 2N3771 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 6 Best Price : $4.0320 Price Each : $4.0320
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Part : 2N3771G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 259 Best Price : £2.26 Price Each : £4.11
Part : 2N3771G Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 135 Best Price : $2.82 Price Each : $4.27
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Part : JANTX2N3771 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 935 Best Price : $142.4900 Price Each : $142.4900
Part : 2N3771G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $2.20 Price Each : $4.56
Part : 2N3771G. Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 34 Best Price : $1.84 Price Each : $1.84
Part : 2N3771 Supplier : STMicroelectronics Manufacturer : Farnell element14 Stock : - Best Price : £1.35 Price Each : £1.54
Part : 2N3771G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £1.52 Price Each : £2.88
Part : 2N3771 Supplier : NTE Electronics Manufacturer : Master Electronics Stock : 5 Best Price : $2.80 Price Each : $7.00
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2N3771/2N3772

Catalog Datasheet MFG & Type PDF Document Tags

2n3772

Abstract: 2N3771 power circuit , series pass regulators, and inductive switching applications. 2N3771* 2N3772 *ON Semiconductor , ÎÎÎ IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Rating Symbol VCEO , VOLTS 150 WATTS 2N3771 40 50 50 2N3772 60 80 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter , THERMAL CHARACTERISTICS Characteristics Symbol JC 2N3771, 2N3772 1.17 Unit Thermal Resistance , Sustaining Voltage (1) (IC = 0.2 Adc, IB = 0) 2N3771 2N3772 2N3771 2N3772 VCEO(sus) VCEX(sus) 40 60 50 80 45
ON Semiconductor
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2N3771 power circuit 1N5825 MSD6100

2N3772

Abstract: Qualified Level 2N3771 JANTX JANTXV 2N3772 MAXIMUM RATINGS Ratings Symbol @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 2N3771 2N3772 Unit , ) Characteristics Symbol Min. Max. Unit 2N3771 2N3772 V(BR)CEO 40 60 Vdc 2N3771 2N3772 V(BR)CER 45 70 Vdc 2N3771 2N3772 V(BR)CEX 50 90 Vdc 2N3771 2N3772 ICEO 5.0 5.0 mAdc 2N3771 2N3772 IEBO 2.0 mAdc 2N3771 2N3772 ICEX 500 500
Microsemi
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MIL-PRF-19500/

2N3771

Abstract: 2N3772 Qualified Level 2N3771 JANTX JANTXV 2N3772 MAXIMUM RATINGS Ratings Symbol @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 2N3771 2N3772 Unit , ) Characteristics Symbol Min. Max. Unit 2N3771 2N3772 V(BR)CEO 40 60 Vdc 2N3771 2N3772 V(BR)CER 45 70 Vdc 2N3771 2N3772 V(BR)CEX 50 90 Vdc 2N3771 2N3772 ICEO 5.0 5.0 mAdc 2N3771 2N3772 IEBO 2.0 mAdc 2N3771 2N3772 ICEX 500 500
Microsemi
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transistor 2n3772 2n377 MIL-PRF-19500/518

2N3771

Abstract: 2n3772 Vdc - 2N3771 = 2.5 Adc @ V q e = 60 Vdc - 2N3772 2N 3771* 2N 3772 'Motorola Preferred Device , CEO VCEX VCB V EB 2N3771 40 50 50 5.0 30 30 7.5 15 150 0.855 2N3772 60 80 100 7.0 20 30 5.0 15 , , Junction to Case Symbol 0 jc 2N3771, 2N3772 1.17 Unit °C/W * Indicates JEDEC Registered Data , = 0) (VBe = 7.0 Vdc, Iq = 0) 2N3771 2N3772 2N3771 2N3772 'EBO 'CBO m Adc 2N3771 2N3772 2N6257 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 v CEO(sus) 40 60 50 80 45 70 - - - - - - m Adc Vdc
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OCR Scan
LB2T motorola 2n3771 2N3771/D

1N5825

Abstract: 2N3771 ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Operating and Storage Junction Temperature , ) *Collector­Emitter Sustaining Voltage (1) (IC = 0.2 Adc, IB = 0) 2N3771 2N3772 VCEO(sus) 40 60 - - , ) 2N3771 2N3772 VCEX(sus) 50 80 - - Vdc Collector­Emitter Sustaining Voltage (IC = 0.2
ON Semiconductor
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2N3771

Abstract: 2N3771 power circuit ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N3771 2N3772 Unit , Publication Order Number: 2N3771/D 2N3771 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 , Sustaining Voltage (1) (IC = 0.2 Adc, IB = 0) 2N3771 2N3772 VCEO(sus) 40 60 - - Vdc Collector-Emitter Sustaining Voltage (IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms) 2N3771 2N3772 VCEX
ON Semiconductor
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Power Transistor 2N3771 2N3771 power transistor transistor 2N3771

2N3772

Abstract: 2N3771 , TEMPERATI!RE(°C) NPN 2N3771 2N3772 Characteristic Symbol 2N3771 2N3772 Unit Collector-Emitter Voltage VCEO , G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3771, 2N3772 NPN , CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (lc = 200 mA, lB = 0 ) 2N3771 2N3772 ^ceo(sus) 40 , 2N3772 ^cex(sus) 50 80 V Collector Cutoff Current (VCE = 30V, lB = 0) (VCE = 50V, lB = 0) 2N3771 2N3772 , 2N3772 'cEV 2.0 5.0 mA Collector Cutoff Current (VCE = 50V, lE = 0) (VCE=100V,IE = 0) 2N3771 2N3772
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S200 203-CA 2N3772 APPLICATIONS

2N3772

Abstract: 2N3771 TECHNICAL DATA 2N3771 JANTX, JTXV 2N3772 JANTX, JTXV MIL-PRF QPL DEVICES Processed per , 2N3772 V(BR)CEO 40 60 Vdc 2N3771 2N3772 V(BR)CER 45 70 Vdc 2N3771 2N3772 V(BR)CEX 50 90 Vdc 2N3771 2N3772 ICEO 5.0 5.0 mAdc 2N3771 2N3772 IEBO 2.0 mAdc 2N3771 2N3772 ICEX 500 500 µAdc OFF CHARACTERISTICS Collector-Base , / (978) 794-1666 / Fax: (978) 689-0803 3/98 REV: B Page 1 of 2 2N3771, 2N3772 JAN SERIES
New England Semiconductor
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adc ic MIL-PRF-19500/413

2n3772

Abstract: 2n3771 SavantIC Semiconductor Product Specification 2N3771 2N3772 Silicon NPN Power Transistors , VEBO Emitter-base voltage CONDITIONS 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 Open emitter Open base Open collector VALUE 50 100 40 60 5 7 2N3771 30 2N3772 20 , 200 Tstg UNIT -65~200 30 2N3771 7.5 2N3772 5.0 A A A 15 TC=25 A , VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification 2N3771 2N3772 Silicon
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2N3772

Abstract: 2N3771 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 , Country of Origin ORDERING INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping , ) (IC = 20 Adc, IB = 4.0 Adc) 2N3771 2N3772 2N3771 2N3772 Base-Emitter On Voltage (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) 2N3771 2N3772
ON Semiconductor
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Abstract: RATINGS Rating Symbol 2N3771 2N3772 Unit C o lle cto r-E m itte r Voltage VCEO 40 , Watts W /°C T j, TSfg - 6 5 to + 200 °C Symbol 2N3771, 2N3772 Unit 0JC 1.17 , â'˜ C o lle cto r-E m itte r Sustaining Voltage (1) (I q = 0.2 Adc, lB = 0) 2N3771 2N3772 V , 100 Ohms) 2N3771 2N3772 V cE X (su s) C ollector-E m itter Sustaining Voltage (I q = 0.2 Adc, RgE = 100 Ohms) 2N3771 2N3772 V cE R (su s) â'˜ Collector Cutoff Current (V q e = 30 -
OCR Scan
2N37712N3772

2N3772

Abstract: 2N3771 2N3772 Characteristic Symbol 2N3771 2N3772 Unit Collector-Emitter Voltage VCEO 40 60 V , 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 http://www.bocasemi.com 2N3771, 2N3772 , ) 2N3771 2N3772 ^ceo(sus) 40 60 V Collector - Emitter Sustaining Voltage (lc = 0.2 A, VBE(off) = 1.5 V, Rbe = 100 Ohms) 2N3771 2N3772 ^cex(sus) 50 80 V Collector Cutoff Current (VCE = 30V, lB = 0) (VCE = 50V, lB = 0) 2N3771 2N3772 'ceo 10 10 mA Collector Cutoff Current (VCE = 50V,VBE(off)=1.5V) (VCE
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OCR Scan
Abstract: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , Adc @ VCE = 40 Vdc â' 2N3771 = 2.5 Adc @ VCE = 60 Vdc â' 2N3772 Pbâ'Free Packages are Available , MAXIMUM RATINGS (Note 1) Symbol 2N3771 2N3772 Unit Collectorâ'Emitter Voltage Rating , INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping TOâ'204 100 Units / Tray , 40 Vdc) 2N3771 (VCE = 60 Vdc) 2N3772 IS/b Adc SECOND BREAKDOWN *DYNAMIC ON Semiconductor
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2N3772 motorola

Abstract: 1N5825 . Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , _C Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Thermal Resistance, Junction to Case , 3.75 Adc @ VCE = 40 Vdc - 2N3771 IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772 20 and 30 AMPERE POWER , Preferred Device 2N3771* 2N3772 SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3771/D , 4.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) 2N3771 2N3772 15 15 60 60 2N3771 2N3772 5.0
Motorola
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2N3772 motorola

2N3771G

Abstract: 2N3771 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 and 30 AMPERE POWER , Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Symbol 2N3771 2N3772 Unit , 2N3771 2N3771G 2N3772 2N3772G Package Shipping TO-204 100 Units / Tray TO-204 (Pb-Free , ) (IC = 20 Adc, IB = 4.0 Adc) 2N3771 2N3772 2N3771 2N3772 Base-Emitter On Voltage (IC = 15 Adc
ON Semiconductor
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2N3772 motorola

Abstract: motorola 2n3772 Currant Capability 'S/b " 3.75 Adc ® VcE * 40 Vdc 2N3771 - 2.5 Adc 4« VcE * 60 Vdc - 2N3772 â'¢MAXIMUM , Symbol 2N3771 2N3772 Unit Collector Eminor Voltage VCEO 40 60 Vdc Collector-Emitter Voltage VCEX 50 B0 , Range T> TItg -65 to ♦ 200 X THERMAL CHARACTERISTICS Characteristics Symbol 2N3771. 2N3772 Unit Thermal Resistance, Junction to Case â'¢jc 1.17 tw ?c. CAM TIM* «MUSI l*C) 2N3771* 2N3772 , -31 B&D Enterprises 2N3771, 2N3772 Wâ"¢ & liberty St. Russell, PA 16545 1 -800-458-6053 fox 18141 757
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3N3772 2N3777 motorola 2n3772 2n37 2n3772 voltage regulator 2N3112 7N3777 7N3771

3771- IC

Abstract: 2N3772 motorola b e * 5 -0 Vdc, lc - 0) (V B E - 7.0 Vdc, lc - 0) 2N3771 2N3772 IC B O 2N3771 2N3772 lE B O 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 VC E O (su s) 40 60 50 80 45 70 - Symbol Min Max Unit , 2N3772 - _ iC E V _ 10 10 mAdc 2N3771 2N3772 2N6257 2N3771 2N3772 _ - _ _ _ - , - 4.0 Vdc) - 4.0 Vdc) - 4.0 Vdc) - 4.0 Vdc) - 4.0 Vdc) 2N3771 2N3772 2N3771 2N3772 VCE(sat) 2N3771 , . Thermal Response - 2N3771,2N3772 40 ft' 1 UJ CC d g o § Ò 3.0 2.0 "1.0 30 20 2N3771 40 (JS -LLL 100 ns
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OCR Scan
3771- IC

2N3771

Abstract: 2N3772 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , 2N3771/2N3772 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.17 C/W , 2N3771 V CB = 50 V for 2N3772 V CB = 100 V o for ALL V CB = 30 V T j = 150 C 2 5 10 mA mA mA I CEO Collector Cut-off Current (I B = 0) for 2N3771 for 2N3772 V CB = 30 V V CB =
STMicroelectronics
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P003N 2N3771/2N3772

diode cc 3053

Abstract: 2n3772 EQUIVALENT , SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for , +200 -65 to +200 6 150 2N3771 1.17 29.2 6 150 2N3772 1.17 29.2 (1) Derate linearly 34.2 , characteristics. Type hFE2 at VCE = 4 V dc IC = 15 A dc Max Min 2N3771 15 60 2N3772 (1) Pulsed (see , = 1 A dc f = 100 kHz IE = 0 100 kHz f 1 MHz 2N3771 2N3772 Limits s Min Max 6 , 2N3772 Breakdown voltage, collector to emitter 3011 2N3771 2N3772 40 60 Emitter to base
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diode cc 3053 2n3772 EQUIVALENT 2n3771 equivalent 1N1186A 2N3772 JAN MIL-PRF-19500/413F MIL-PRF-19500/413E MIL-PRF-19500

diode cc 3053

Abstract: cc 3053 , HIGH-POWER TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for use by all , 20 -65 to +200 -65 to +200 2N3771 2N3772 1/ Derate linearly 34.2 mW/C for TA > +25C. 2 , VCE(SAT) IC = 15 A dc Min 2N3771 2N3772 IC = 10 A dc Max Min Max 5 60 15 1 , 0 100 kHz < f < 1 MHz 2N3771 2N3772 s Min Max 6 30 1,200 pF s s s 10 , , VBE = -1.5 V dc, pulsed (see 4.5.1) V(BR)CEX 2N3771 2N3772 Collector-emitter cutoff current
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cc 3053 cc 3053 diode 2N3771 equivalent transistor K 3053 TRANSISTOR MIL-PRF19500 Transformer Inspection Testing MIL-PRF-19500/413C MIL-S-19500/413B 17C/W

2N3772

Abstract: 2N3771 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , o C 1/4 2N3771/2N3772 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case , ) 6 A Pulsed: Pulse duration = 300 µs, duty cycle 2 % 2/4 2N3771/2N3772 TO , 1.193 A P C O N B V E G U D R P003F 3/4 2N3771/2N3772
STMicroelectronics
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Abstract: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR I STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Temperature December 2000 150 -65 to 200 W o C 1/4 2N3771/2N3772 THERMAL DATA R thj-case , : Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 2N3771/2N3772 TO-3 MECHANICAL DATA mm DIM , N B V E G U D R P003F 3/4 2N3771/2N3772 Information furnished is STMicroelectronics
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