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2N3771 power circuit

Catalog Datasheet MFG & Type PDF Document Tags

2N3771

Abstract: 2n3772 3.75 2.5 Adc _ - 2 Motorola Bipolar Power Transistor Device Data 2N3771 2N3772 0.02 , Bipolar Power Transistor Device Data 3 2N3771 2N3772 100 50 VCC = 30 V _ IC /lB = 10 lB1 - lB2 T , -204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N3771 2N3772 M otorola , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3771/D High Pow er NPN , Vdc - 2N3771 = 2.5 Adc @ V q e = 60 Vdc - 2N3772 2N 3771* 2N 3772 'Motorola Preferred Device
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LB2T 2N3771 power circuit motorola 2n3771 2N3771/D

2n3772

Abstract: 2N3771 power circuit Test Circuit Figure 5. Turn-On Time http://onsemi.com 43 2N3771 2N3772 100 50 20 10 t, TIME , ON Semiconductort High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. 2N3771* 2N3772 *ON Semiconductor , ÎÎÎ IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Rating Symbol VCEO VCEX VCB VEB IC IB *MAXIMUM RATINGS 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60
ON Semiconductor
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1N5825 MSD6100

2N3771

Abstract: 2N3771 power circuit ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , Publication Order Number: 2N3771/D 2N3771 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 , 2000 Figure 2. Thermal Response - 2N3771, 2N3772 There are two limitations on the power handling , Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS · Forward Biased Second Breakdown Current Capability w IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771
ON Semiconductor
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2N6257 Power Transistor 2N3771 2N3771 power transistor transistor 2N3771

1N5825

Abstract: 2N3771 ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 , , COLLECTOR CURRENT (AMP) 30 40 µs 2N3771 20 There are two limitations on the power handling , Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Operating and Storage Junction Temperature
ON Semiconductor
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Abstract: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , otherwise noted) 2N3771, 2N3772 2N3771, 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 , is permissible to increase the pulse power limits until limited by T J(max). 40 ms 2N3771 , Adc @ VCE = 40 Vdc â' 2N3771 = 2.5 Adc @ VCE = 60 Vdc â' 2N3772 Pbâ'Free Packages are Available* 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS ON Semiconductor
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2N3772

Abstract: 2N3771 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS ÎÎ Î Î Î , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Symbol 2N3771 , Country of Origin ORDERING INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping
ON Semiconductor
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3771- IC

Abstract: 2N3772 motorola Circuit Figure 5. Turn-On Time Motorola Bipolar Power Transistor Device Data 3-19 V V * · O , MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Power NPN Silicon Power Transistors . designed , Second Breakdown Current Capability IS/b = 3.75 Adc @ V c e = 40 Vdc - 2N3771 = 2.5 Adc @ V c e = 60 Vdc , S NPN SILIC O N 40 and 60 VOLTS 150 WATTS Symbol VCEO VCEX VCB Veb 'C 2N3771 40 50 50 5.0 30 , 3771,2N 3772 1.17 Unit °C/W Figure 1. Power Derating Preferred devices are Motorola recommended
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3771- IC 2N3772 motorola

2N3772 motorola

Abstract: 1N5825 3.75 Adc @ VCE = 40 Vdc - 2N3771 IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772 20 and 30 AMPERE POWER , MSD6100 USED BELOW IB 100 mA Figure 4. Switching Time Test Circuit Motorola Bipolar Power , Bipolar Power Transistor Device Data 5 2N3771 2N3772 Motorola reserves the right to make changes , Motorola Bipolar Power Transistor Device Data *2N3771/D* 2N3771/D Motorola , © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 Preferred
Motorola
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Abstract: , TIME (ms) Figure 2. Thermal Response â'" 2N3771, 2N3772 There are two limitations on the power , BELOW lB = 100 mA Figure 4. Switching Time Test Circuit Motorola Bipolar Power Transistor Device , MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N 3771* 2 N 3772 High Power NPN Silicon Power Transistors â'˜ Motorola Preferred Device . . . designed for linear , Breakdown Current Capability IS/b = 3.75 Adc @ V q e = 40 Vdc â'" 2N3771 = 2.5 Adc @ V q e = 60 Vdc â -
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2N37712N3772

diode cc 3053

Abstract: 2n3772 EQUIVALENT , SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for , +200 -65 to +200 6 150 2N3771 1.17 29.2 6 150 2N3772 1.17 29.2 (1) Derate linearly 34.2 , characteristics. Type hFE2 at VCE = 4 V dc IC = 15 A dc Max Min 2N3771 15 60 2N3772 (1) Pulsed (see , = 1 A dc f = 100 kHz IE = 0 100 kHz f 1 MHz 2N3771 2N3772 Limits s Min Max 6 , requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA +35°C; VCB = 25 V
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diode cc 3053 2n3772 EQUIVALENT 2n3771 equivalent 1N1186A 2N3772 JAN MIL-PRF-19500/413F MIL-PRF-19500/413E MIL-PRF-19500

diode cc 3053

Abstract: cc 3053 , HIGH-POWER TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for use by all , 20 -65 to +200 -65 to +200 2N3771 2N3772 1/ Derate linearly 34.2 mW/C for TA > +25C. 2 , VCE(SAT) IC = 15 A dc Min 2N3771 2N3772 IC = 10 A dc Max Min Max 5 60 15 1 , 0 100 kHz < f < 1 MHz 2N3771 2N3772 s Min Max 6 30 1,200 pF s s s 10 , initial reading. Subgroup 2 of table I herein. 4.3.1 Power burn-in conditions. Power burn-in
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cc 3053 cc 3053 diode 2N3771 equivalent transistor K 3053 TRANSISTOR MIL-PRF19500 Transformer Inspection Testing MIL-PRF-19500/413C MIL-S-19500/413B 17C/W

2N3772 motorola

Abstract: 200iC : ~: :-; :;),: and~or ~,;:. Unibase for ultimate circuit EPIBASEA- Designed , regulators applications. i3reakdowrr (@ \/CE = Current Capability 40 Vdc ­ 2N3771 2.5 , Collector-Emitter Sustaining Voltage vcEO(S"~) 2N3771 .- Collector-Emitter Sustaining Collector-Emitter (Ic =0.2 MJ3771 MJ3772 M. I 2N3771 MJ3771 I I I I I I Sustain ing Voltage Adc, RBE = 1000hms) `CEX(SUS) VCER(S"~) 2N3771 2N3772 = 1.5 Vdc, Vdc
Motorola
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MJ6257 IMJ3772 200iC MOTOROLA MJ3771 W630 lj377 G43E gi06 J3771 FI13U13E M305300 MSO61OO

2N3771 power circuit

Abstract: 2N3771 HIGH POWER NPN POWER TRANSISTORS 2N3771 40 VOLTS 30 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switching , specified) RATING SYMBOL 2N3771 UNITS Collector-Emitter Voltage VCEO 40 Volts Collector-Base Voltage VCBO , Base Current â'" Continuous IB 7.5 15 A Total Power Dissipation @ Tc = 25°C Derate above 25° C PD , Tc. CASE TEMPERATURE l°C) FIGURE 11 - POWER DERATING 175 ¡100 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
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MBD5300 T0-204AA

RCA 40636 transistor

Abstract: rca 40636 Complementary-Pair Power Types. POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit , Ic to 80 A . Pt to 300 W . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES lc - 1.6 A max , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-70 ®3A fT - 0.8 MHz tvp. PT- 117W 2N3771 VCERlsosl = 45 V hFE = 15-60 @ 15 A fT = 0.8 MHz min. PT , 353 524 668 CTâ'" Complementary Type available, see matrix on Complementary-Pair Power Types
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RCA 40636 transistor rca 40636 rca 2N3771 power circuit rca 40327 40636 rca 300W TRANSISTOR AUDIO AMPLIFIER ITO-391- ITO-220 ITO-2201 ITO-31 2N1482 2N5786

RCA 40411 transistor

Abstract: rca 40411 Complementary-Pair Power Types. POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit , HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz , , , !c to 60 A .,. Pr to 140 W , . CTâ'"Complementary Type available, see matrix on Complementary-Pair Power Types. 2N6500 VCEH(SUSI - 110 V t , POWER TYPES Hometaxial-Base/Epitaxial-Base I, 1.5 N-P-N to 2 A P-N-P lâ'ž = 2 N-P-N .5 A P-N-P 1,. 3 , INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range Peak
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2N2102 2N5320 RCA 40411 transistor rca 40411 BUX18 transistor audio amplifier with rca 40411 RCA 40872 2n3283 ITO-391 80-12SW 2N4036 2N5322

RCA transistor 40410

Abstract: RCA transistor 40319 . CTâ'"Complementary Type available, see matrix on Complementary-Pair Power Types. #For new equipment design onlyâ'"not recommended for retrofit. 848 POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit Output Transistors Class B Driver Class B Pre-Driver M_p_KJ â  Class A , high-voltage n-p-n & p-n-p power types IC to 30 A . fj to 20 MHz . . . Pt to 175 W T.V , transistor-family designation. APPLICATION INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching
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RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 rca 40634 rca 40872 transistor rca 40410 2N6510 2N6308 BUX18 2N6306 BUX17 VCER-175V

RCA 40872

Abstract: 40629 Transistor Complementary-Pair Power Types. POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit , HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES IC to 30 A . fr to 20 MHz . Py to 175 W Ic â  1 A , , see matrix on Complementary-Pair Power Types. *For new equipment design only-not recommended for , 498 513 COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base I, 1.5 N-P-N to 2 A P-N-P , INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range Peak
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2N6177 2N3439 2N5415 2N6213 2N6079 2N5840 40629 Transistor RCA 40852 RCA 40250 rca 40594 40872 rca RCA 40594 transistor TQ-66 2N358S

Transistor 2n6099

Abstract: 2N3055 AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit Output Transistors Class B Driver Class B Pre-Driver , Ic to 80 A . Pt to 300 W . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES lc - 1.6 A max , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-70 ®3A fT - 0.8 MHz tvp. PT- 117W 2N3771 VCERlsosl = 45 V hFE = 15-60 @ 15 A fT = 0.8 MHz min. PT , 353 524 668 CTâ'" Complementary Type available, see matrix on Complementary-Pair Power Types
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BD278 BD277 Transistor 2n6099 2N6478 power amplifier circuit transistor BDX 65 Transistor 40347 2N5295 2NS296 2N6263 FE-20-100 2N6477

RCA 40408 transistor

Abstract: RCA 40409 transistor Complementary-Pair Power Types. POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit , HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz , , , !c to 60 A .,. Pr to 140 W , . CTâ'"Complementary Type available, see matrix on Complementary-Pair Power Types. 2N6500 VCEH(SUSI - 110 V t , POWER TYPES Hometaxial-Base/Epitaxial-Base I, 1.5 N-P-N to 2 A P-N-P lâ'ž = 2 N-P-N .5 A P-N-P 1,. 3 , INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range Peak
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RCA 40408 transistor RCA 40409 transistor rca 40409 rca 40361 transistor rca 40361 RCA transistor 40409 2N6178 2N6180 2N3879 2N6482 2N6354 2NS038

RCA 40872

Abstract: 40629 Transistor Complementary-Pair Power Types. POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit , HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES IC to 30 A . fr to 20 MHz . Py to 175 W Ic â  1 A , , see matrix on Complementary-Pair Power Types. *For new equipment design only-not recommended for , 498 513 COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base I, 1.5 N-P-N to 2 A P-N-P , INFORMATION . _ T . Power Types for Electrostatic Deflection Power Tvnes ÃN-P-N & P-N-Pl as Pass
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2N6175 2N3440 BUX67 BFT19B RCA 40635 2n5298 40629 2N3583 BUX66
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