500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
JANTXV2N3766 Microsemi Corporation Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN visit Digikey Buy
JANTX2N3766 Microsemi Corporation Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2N3766JANTX Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $19.99 Price Each : $21.89
Part : 2N3766JANTXV Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $30.79 Price Each : $33.59
Part : JAN2N3766 Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $19.09 Price Each : $20.79
Part : 2N3766 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 2,300 Best Price : - Price Each : -
Part : JANTX2N3766MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 6,780 Best Price : - Price Each : -
Part : 2N3766 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 164 Best Price : $31.3000 Price Each : $31.3000
Part : JAN2N3766 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 33 Best Price : $160.9200 Price Each : $160.9200
Part : JANTX2N3766 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 3,179 Best Price : $22.42 Price Each : $26.6400
Shipping cost not included. Currency conversions are estimated. 

2N3766 Datasheet

Part Manufacturer Description PDF Type
2N3766 Microsemi NPN Power Silicon Transistor Original
2N3766 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20 Original
2N3766 Advanced Semiconductor Silicon Transistors Scan
2N3766 API Electronics Transistor Selection Guide Scan
2N3766 API Electronics Short form transistor data Scan
2N3766 API Electronics Short form transistor data Scan
2N3766 Central Semiconductor BJT, NPN, Power Transistor, IC 4A - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20 Scan
2N3766 Diode Transistor Transistors Scan
2N3766 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3766 General Diode Transistor Selection Guide Scan
2N3766 General Semiconductor Low Frequency Silicon Power Transistor (Also available in JAN & JANTX) Scan
2N3766 General Transistor Power Transistor Selection Guide Scan
2N3766 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N3766 Motorola Motorola Semiconductor Datasheet Library Scan
2N3766 Motorola The European Selection Data Book 1976 Scan
2N3766 Motorola European Master Selection Guide 1986 Scan
2N3766 Motorola Power Transistor Selection Guide Scan
2N3766 N/A Basic Transistor and Cross Reference Specification Scan
2N3766 N/A Transistor Shortform Datasheet & Cross References Scan
2N3766 N/A Basic Transistor and Cross Reference Specification Scan
Showing first 20 results.

2N3766

Catalog Datasheet MFG & Type PDF Document Tags

900NT

Abstract: 2N3766 2N3766 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N3766 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3766 at our online store! 2N3766 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3766 Information Did you Know , for Parts Request a Quote Test Houses 2N3766 Specifications Military/High-Rel : N V(BR)CEO (V
American Microsemiconductor
Original
900NT STV3208 LM3909N LM3909 1N4510 2N1711

2n3767

Abstract: 2N3766 Central 2N3766 2N3767 NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN power transistors manufactured by the , : FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL 2N3766 , VEB=6.0V 500 A 500 A BVCEO IC=100mA (2N3766) IC=100mA (2N3767) BVCEO VCE(SAT , pF R1 (25-October 2007) Central TM Semiconductor Corp. 2N3766 2N3767 NPN SILICON
Central Semiconductor
Original
transistor 2N3766 TO-66 CASE TRANSISTOR TO-66 100KH

2N3767

Abstract: 2N3766 Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage , +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units VCEO VCBO , 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS
Microsemi
Original
2000C MIL-PRF-19500/518

2N3767

Abstract: 2N3766 , SILICON, POWER, TYPE 2N3766, 2N3767, JAN, JANTX, AND JANTXV This specification is approved for use by , , TC = +25°C. 2N3766 2N3767 PT (1) VCBO VCEO VEBO IB IC TJ and TSTG RJC , 20 20 Type 2N3766 2N3767 Max 50 50 VCE(sat)1 VCE(sat)2 IC = 1 A dc IB = 0.1 A dc Type IC = 500 mA dc IB = 50 mA dc Min 2N3766 2N3767 Max Min 2.5 2.5 , , pulsed (see 4.5.1) ZJC °C/W V(BR)CEO 2N3766 2N3767 60 80 Collector to emitter cutoff
-
Original
C-2688 MIL-PRF-19500/518D MIL-PRF-19500/518C MIL-PRF-19500 T0-66

2N3767

Abstract: 2N3766 TECHNICAL DATA 2N3766 JAN, JTX, JTXV 2N3767 JAN, JTX, JTXV MIL-PRF QPL DEVICES , Power Dissipation @ TC = 250C (1) Operating & Storage Junction Temperature Range Symbol 2N3766 , otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 , 2N3766, 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max
New England Semiconductor
Original
Abstract: Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter , Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units , CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS Microsemi
Original
MIL-PRF-19500/

2N3767 JANTX

Abstract: 2N3767 NPN Power Silicon Transistor 2N3766 & 2N3767 Features · · Available in JAN, JANTX, and JANTXV per , = +25 °C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N3766 , °C unless otherwise noted) OFF Characteristics Collector - Emitter Breakdown Voltage IC = 100 mAdc 2N3766 , VCB = 100 Vdc Emitter - Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 , 2N3766 & 2N3767 Electrical Characteristics -con't ON Characteristics (2) Forward Current Transfer Ratio
Aeroflex / Metelics
Original
2N3767 JANTX 888-641-SEMI

2N3767

Abstract: 2N3766 Centralâ"¢ Semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦ I 2N3766 2N3767 NPN SILICON POWER TRANSISTOR JEDEC TO-66 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN by the epitaxial base process designed for power amplifier and appli cat i ons. MAXIMUM RATINGS (TC=25°C unless otherwise noted) symbol 2N3766 2N3767 vCB0 80 100 vCE0 60 80 , =10V, 2N3766 MIN IB=50mA Ib=0.1A lc=1.OA Ic=50mA Ic=500mA lc=1.OA Ic=100mA, f=1.0kHz lc=500mA, f=10MHz lc
-
OCR Scan
TO-66

2N3766

Abstract: 2N3767 , TRANSISTOR, NPN, SILICON, POWER TYPE 2N3766, 2N3767 JAN, JANTX, AND JANTXV This specification is approved , 100 60 80 6 6 2 2 4 4 -65 to +200 -65 to +200 7 7 2N3766 2N3767 1 , mA dc f = 10 MHz Max Min IC = 1 A dc IB = 0.1 A dc Type Min 2N3766 2N3767 20 20 , = 1 A dc IB = 0.1 A dc Type IC = 500 mA dc IB = 50 mA dc Min 2N3766 2N3767 Max , ; IC = 100 mA dc; pulsed (see 4.5.1) V(BR)CEO 2N3766 2N3767 60 80 Collector to emitter
-
Original
MIL-PRF19500 MIL-S-19500/518B

2N3766 MOTOROLA

Abstract: 2N3766 TECHNICAL DATA SEMICONDUCTOR 2N3766 2N3767 M E D IU M - P O W E R N P N S IL IC O N T R A N S I S T , -213AA Package Complementary to PNP 2N3740 (2N3766) and 2N3741 (2N3767) M A X IM U M R A TIN G S Rating C o , tu re R ange = 2 5°C Symbol VC E O «? 2N3766 i 60 80 1 2N3767 60 100 Unit V de V dc V , >7554 00044=10 2N3766, 2N3767 fl I 7 " 3 3 -0*7 E L E C T R IC A L C H A R A C T E R IS T IC S , lle cto r-B a se C utoii C u rre n t (VCB " 80 y d c* * E - 0) tV cB - 100 Vdc, IE = 0) 2N3766 2H3767
-
OCR Scan
2N3766 MOTOROLA 2N3741 MOTOROLA 2n3767 motorola 2N3740 motorola 2h37
Abstract: , please contact us. Search Results Part number search for devices beginning "2N3766" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N3766 2N3766-JQR-B 2N3766SMD 2N3766SMD05 2N3766SMD05-JQR-B 2N3766SMD-JQR-B Polarity NPN NPN NPN NPN NPN NPN Package TO66 TO66 Semelab
Original
2N3486 2N3486A 2N3486CSM 2N3509 2N3509CSM 2N3509CSM-JQR-B
Abstract: 2N3766+JAN Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

2N3766

Abstract: transistor 2N3766 NPN SILICON TRANSISTOR Semelab Limited 2N3766 · LOW SATURATION VOLTAGE · HIGH GAIN CHARACTERISTICS · HERMETICALLY SEALED TO-66 METAL PACKAGE · SCREENING OPTIONS AVAILABLE · SWITCHING APPLICATIONS · MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO VCBO Collector - Emitter Voltage Collector - Base Voltage VEBO Emitter - Base Voltage IC Collector , ://www.semelab.co.uk Document Number 8084 Issue 1 NPN SILICON TRANSISTOR 2N3766 ELECTRICAL CHARACTERISTICS
Semelab
Original
Abstract: NPN SILICON TRANSISTOR Semelab Limited 2N3766 â'¢ LOW SATURATION VOLTAGE â'¢ HIGH GAIN CHARACTERISTICS â'¢ HERMETICALLY SEALED TO-66 METAL PACKAGE â'¢ SCREENING OPTIONS AVAILABLE â'¢ SWITCHING APPLICATIONS â'¢ MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO VCBO VEBO IC IB PT Collector - Emitter Voltage Collector - Base Voltage Emitter - , electronics plc. Document Number 8084 Issue 1 NPN SILICON TRANSISTOR Semelab Limited 2N3766 Semelab
Original

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 /518A 12-E 2N3766 YES .YES YES /518A 10-A MIL-S- PAGE- 2NTYPE* JAN JAN TX JANTXV 19500 TABLE , 2N1486 2N1488 2N1490 60V 2N1714 2N1716 2N389 2N3418 2N3420 2N3766 65V 70V
-
OCR Scan
2N1479 2N1489 2N6352 2N6350 POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 pnp 400v 10a 2N1468 2NXXXX T-33- D0D07 19S00 2N424 2N1016B

2N3820

Abstract: RF 2N3766 2N3767 2N3791 2N3792 2N3821 through 2N3823 2-5 2-5 2-6 2N4948 2N4949
-
OCR Scan
2N3820 2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468

2N1716

Abstract: 2N3879 BIPOLAR NPN MESA POWER TRANSISTORS DEVICE TYPE PEAK c AMPS VCE (sat) max VOLTS PACKAGE bvceo VOLTS hFE min/max < o m < c @ ' b A A / T0-205 (T° -5) o 2N1714* 2N1715* 2N1716 2N1717* 60 100 60 100 0.75 0.75 0.75 0.75 20 min 20 min 40 min 40 min 0.2/5.0 0.2/5.0 0.2/5.0 0.2/5.0 2.0 2.0 2.0 2.0 0.2/0.02 0.2/0.02 0.2/0.02 0.2/0.02 nr ^ TO-213 (TO-66) - 2N3584* 2N3585* 2N3766* 2N3767* 2N3738 2N3739* 2N3879" 300 400 60 80 225 300 75 5.0 5.0 1.0
-
OCR Scan
2N3741A
Abstract: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J â¡â¡43Sc â¡OOODb? 2 ia A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo TO-46 NPN PNP NPN PNP NPN PNP 60V 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 80V 2N3767 2N3741 PG1051 P G2051 PG1002 PG2002 100V PG1103 PG2103 PG1052 -
OCR Scan
PG2052 PG1003 PG2003 2N4864 PG2136 2N4863

MJ2250

Abstract: MJ2249 MOTOROLA SC OIODES/OPTOÏ ^4 ÌmF | t , 3L . 7 2S S GG37T27 ì 6367255 MOTOROLA SC (DIODES/OPTO) 34C 37927 D SILICON P O W E R T R A N S IS T O R DICE (continuad) r - 3 3 -O/ DIE NO. LINE S O U R C E - 2C3767 - NPN PL500.31 This die provides performance equal to or better than that of the following device types: 2N3766 2N3767 MJ2249 MJ2250 Designed for driver, switching, and mediumpower amplifier applications. METALLIZATION - Top
-
OCR Scan
Abstract: 2N3766+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

2NXXXX

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1480 2N1482 2N1714 2N 1716 2N389 2N3418 2N3420 2N1484 2N1486 2N3766 2N1488 2N1490
-
OCR Scan
transistor 2n 523 transistor 2N 3440 2n3741 MIL c 3420 transistor TO-59 Package NPN Transistor 15A 400V to3 88DQ0787 2N1016C 2N1016D 2N1481 2N1722 2N3421

2N1718

Abstract: 2N1720 300 10.0 .2 1.20 1.80 .5 .050 2N3766 TO-66 80 60 6.0 40 160 10.0 .5 2.50 1.50 1.0 .100 2N3767 TO , 6.00 .25 2.00 .50 20 .5 80.0 91 2N3766 6.00 .25 2.00 .50 20 .5 80.0 91 2N3767 6.00 .25
-
OCR Scan
2N1252 2N1253 2N1506 2N1506A 2N1718 2N1720 2N4001 MT-13
Showing first 20 results.