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2N3637L Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5 visit Digikey Buy
JAN2N3637L Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANTXV2N3637L Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANTX2N3637L Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy

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2N3637L Datasheet

Part Manufacturer Description PDF Type
2N3637L Microsemi PNP SILICON AMPLIFIER TRANSISTOR Original
2N3637L N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3637L N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3637L N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3637LJAN New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original
2N3637LJANS New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original
2N3637LJANTX New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original
2N3637LJANTXV New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original

2N3637L

Catalog Datasheet MFG & Type PDF Document Tags

2N3635

Abstract: 2n3634 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP , 1 2N3634L 2N3635L 2N3636L 2N3637L 1 EMITTER · MIL-PRF-19500/357 Qualified · Available as JAN , Device 2N3634 2N3635 JAN JANTX JANTXV JANHC 2N3636 2N3637 2N3634L 2N3635L 2N3636L 2N3637L TO-5 Bulk TO , 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L ELECTRICAL CHARACTERISTICS (TA = 25 , , 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L PACKAGE DIMENSIONS TO-5 3-Lead CASE 205AA ISSUE B B DETAIL X
ON Semiconductor
Original
2N3634/L 2N3635/L 2N3636/L 2N3637/L 205AB 2N3637/D

2N3634

Abstract: 2N3635 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power , 2N3636L 2N3637L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress , INFORMATION Level Device 2N3634 2N3635 JAN JANTX JANTXV JANHC 2N3636 2N3637 2N3634L 2N3635L 2N3636L 2N3637L , , 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L ELECTRICAL CHARACTERISTICS (TA = 25°C unless , , 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L PACKAGE DIMENSIONS TO-5 3-Lead CASE 205AA ISSUE B B DETAIL X
ON Semiconductor
Original
2N3635 JAN

JANKCA2N3637

Abstract: 2N3637UB , SILICON, AMPLIFIER, TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634L THROUGH 2N3637L, JAN , 2N3637, 2N3637L, 2N3637UB PT (1) TA = +25°C W PT (2) TC = +25°C W PT (3) TSP = +25°C W , , 2N3635UB 2N3636, 2N3636L, 2N3636UB 2N3637, 2N3637L, 2N3637UB |hfe| Min 50 50 100 100 50 50 , , and .750 inch (19.05 mm) maximum (TO-39). 10. For transistor types 2N3634L through 2N3637L, LL is , dc 2N3636, 2N3636L, UB VCB = 175 V dc ICBO1 10 uA dc 2N3637, 2N3637L, UB VCB =
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Original
JANKCA2N3637 2N3637 JAN ss357 MIL-PRF-19500/357L MIL-PRF-19500/357K MIL-PRF-19500 JANHCA2N3634 JANKCA2N3634 JANHCA2N3635

2n3637

Abstract: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP , '5 CASE 205AA STYLE 1 2N3634L 2N3635L 2N3636L 2N3637L °C/W Stresses exceeding those listed in , 2N3634L 2N3635L 2N3636L 2N3637L © Semiconductor Components Industries, LLC, 2013 November, 2013 , , 2N3636L, 2N3637, 2N3637L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic , ://onsemi.com 2 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 400 1.2 150Â
ON Semiconductor
Original
Abstract: THROUGH 2N3637L, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA , UBN 2N3635, 2N3635L 2N3635UB and UBN 2N3636, 2N3636L 2N3636UB and UBN 2N3637, 2N3637L 2N3637UB , , 2N3635L 2N3635UB and UBN 2N3636, 2N3636L 2N3636UB and UBN 2N3637, 2N3637L 2N3637UB and UBN hFE3 , , and .750 inch (19.05 mm) maximum (TO-39). 10. For transistor types 2N3634L through 2N3637L, LL is , ICBO1 10 ÂuA dc 2N3637, 2N3637L, UB, UBN VCB = 175 V dc ICBO1 10 ÂuA dc IEBO1 Microsemi
Original
MIL-PRF-19500/357M 2N3634UBN 2N3637UBN 00/357M JANKCA2N3635 JANHCA2N3636

10VDC

Abstract: 2N3637 2N3636 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM , -5* 2N3634L, 2N3635L 2N3636L, 2N3637L °C * Electrical characteristics for "L" suffix devices are , ) minimum, and .750 inch (19.05 mm) maximum (TO-39). 10. For transistor types 2N3634L through 2N3637L, LL
Microsemi
Original
10VDC T4-LDS-0156

2N3637UB

Abstract: 2N3634UB 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JANSM ­ 3K Rads (Si) JANSD , " corresponding devices. TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L * Consult 19500/357 for De-Rating , transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm
Microsemi
Original
2n3637 data T4-LDS-0065
Abstract: 2N3636 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM , TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L °C * Electrical characteristics for â'Lâ' suffix , transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm Microsemi
Original

2N3637UB

Abstract: 2N3635 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC , -5* 2N3634L, 2N3635L 2N3636L, 2N3637L °C * Electrical characteristics for "L" suffix devices are , 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum (TO-5). 11. In
Microsemi
Original
2N3634 JANTX 2N3636L JANS
Abstract: 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JANSM â'" 3K Rads (Si , â'non Lâ' corresponding devices. TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L * Consult 19500/357 , 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum (TO-5). 11. In Microsemi
Original

2C3637KV

Abstract: chip type geometry Semicoa Data Sheet No. CP3637 Chip Type 2C3637KV Geometry 0820 Polarity PNP 2N3636, 2N3636L 2N3637, 2N3637L REF: MIL-PRF-19500L/357 B E 27 MILS Chip type 2C3637KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance similar to these devices. APPLICATIONS: Designed for general purpose switching and amplifier applications. RADIATION , 2N3636, 2N3636L, 2N3637, 2N3637L Features: · High voltage ratings · · · Low saturation voltages Low
Semicoa Semiconductors
Original
chip type geometry Semicoa MIL-STD-750

2N3636 transistor

Abstract: 2N3635 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JANSM ­ 3K Rads (Si) JANSD , TJ, Tstg -65 to +200 TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L °C * Electrical
Microsemi
Original
2N3636 transistor 50krads 2N3634-2N3635 2n3634 transistor 2N363 ic radiation 100MH

2N3635

Abstract: 2N3634 TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol 2N3634* 2N3635* 2N3636* 2N3637* 140 140 175 175 Unit Vdc Vdc 5.0 Vdc 1.0 Adc @ TA = +250C(1) 1.0 W PT @ TC =
Microsemi
Original
2N3635 JANS

2n3637

Abstract: 2N3636 TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV Processed per MIL-PRF-19500/357 MIL-PRF QPL DEVICES PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT 2N3634, L 2N3635, L 140 140 5.0 1.0
New England Semiconductor
Original

STD 357

Abstract: 2N3634 microsemi 2N3637L JAN2N3637 JAN2N3637L JANTX2N3637 JANTX2N3637L JANTXV2N3637 JANTXV2N3637L 2N3762 2N3762L JAN2N3762
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OCR Scan
STD 357 2N3634 microsemi TD357

BF689

Abstract: 2N5651 : VBE: IC: COB: 10 fT: 150 Case Style: TO-205AD/TO-39 Industry Type: 2N3636L STI Type: 2N3637L , : 50mA VCE: VBE: IC: COB: 10 fT: 200 Case Style: TO-205AD/TO-39 Industry Type: 2N3637L STI Type
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Original
BF689 2N5651 BF272 2N5652 BF251 BFY70 BF200 BF183 BF206 BF208 BF207 BF209

LE79Q2281

Abstract: Dimming LED aplications : VBE: IC: COB: 10 fT: 150 Case Style: TO-205AD/TO-39 Industry Type: 2N3636L STI Type: 2N3637L , : 50mA VCE: VBE: IC: COB: 10 fT: 200 Case Style: TO-205AD/TO-39 Industry Type: 2N3637L STI Type
Microsemi
Original
LE79Q2281 Dimming LED aplications transistor SI 6822 STK 084 power amplifier PLAD15KP PIONEER mos car amplifier ic CATALOG