500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
2N3585 Central Semiconductor Corp Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN visit Digikey Buy
2N3585 LEAD FREE Central Semiconductor Corp TRANS NPN 300V 2A TO-66 visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2N3585 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $6.5060 Price Each : $7.1053
Part : 2N3585 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 68 Best Price : $2.00 Price Each : $3.50
Part : 2N3585 Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 2,339 Best Price : $4.2843 Price Each : $10.4496
Part : JAN2N3585 Supplier : RCA Manufacturer : Bristol Electronics Stock : 3 Best Price : $12.00 Price Each : $12.00
Part : 2N3585MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 619 Best Price : - Price Each : -
Part : JAN2N3585MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 45 Best Price : - Price Each : -
Part : JANTX2N3585 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 142 Best Price : - Price Each : -
Part : JAN2N3585 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 1 Best Price : $177.1100 Price Each : $177.1100
Part : JANTX2N3585 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 124 Best Price : $173.00 Price Each : $232.2100
Shipping cost not included. Currency conversions are estimated. 

2N3585 Datasheet

Part Manufacturer Description PDF Type
2N3585 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 300V 2A TO-66 Original
2N3585 Microsemi 5 Amp, 500V, High Voltage NPN Silicon Power Transistors - Pol=NPN / Pkg=TO66 / Vceo=300 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Original
2N3585 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=300 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Original
2N3585 API Electronics Short form transistor data Scan
2N3585 API Electronics 5 Amp NPN Transistors Scan
2N3585 API Electronics Short form transistor data Scan
2N3585 Boca Semiconductor COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS - Pol=NPN / Pkg=TO66 / Vceo=300 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Scan
2N3585 Central Semiconductor BJT, NPN, Switching Transistor, IC 2A - Pol=NPN / Pkg=TO66 / Vceo=300 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Scan
2N3585 Diode Transistor TO-3 / Various Transistor Selection Guide Scan
2N3585 Diode Transistor Transistor Short Form Data - TO-3 Scan
2N3585 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N3585 Ferranti Semiconductors Power Transistors 1977 Scan
2N3585 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N3585 General Electric High-voltage silicon N-P-N transistor. - Pol=NPN / Pkg=TO66 / Vceo=300 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Scan
2N3585 General Transistor Power Transistor Selection Guide Scan
2N3585 Mospec POWER TRANSISTORS(35W) - Pol=NPN / Pkg=TO66 / Vceo=300 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Scan
2N3585 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N3585 Motorola Switchmode Datasheet Scan
2N3585 Motorola Motorola Semiconductor Datasheet Library Scan
2N3585 Motorola The European Selection Data Book 1976 Scan
Showing first 20 results.

2N3585

Catalog Datasheet MFG & Type PDF Document Tags

2N3584

Abstract: 2N3585 NPN 2N3583 ­ 2N3584 ­ 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors , Voltage (IB= 0) VEBO Value 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 Emitter-Base Voltage (IC= 0) IC Collector Current 2N3583 2N3584 2N3585 ICM Peak Collector Current tp = , SEMICONDUCTORS Value Unit 5 87.5 °C/W 1 NPN 2N3583 ­ 2N3584 ­ 2N3585 ELECTRICAL , time IC = 1 A ; IB = 100 mA - - 2N3584 - - 2N3585 2N3583 2N3584 2N3585 -
Comset Semiconductors
Original
transistors 2n3585

rca 2N4240

Abstract: 2n3565 equivalent transistor for ac/dc circuits â  Fast turn-on time at high collector current RCA-2N3583», 2N3584», 2N3585» , . 3 - Typical collector-to-emitter saturation voltage vs. current for types 2N3SB4 and 2N3585. Fig. 4 - Reverse-bias second breakdown characteristics for types 2N3584 and 2N3585. EXTERNAL , 2N3585. Fig. 6 - Reverse-bias second breakdown characteristics tor types 2N3584 and 2N3585. 50 75  , 2N3584 Fig. 12 - Typical storage time vs. collector current for types 2N3584 and 2N3585. and 2N35B5. 0.2
-
OCR Scan
2N3583-2N3585 2N4240 TA2510 TA2871 rca 2N4240 2n3565 equivalent transistor 2N3565 2N3583 equivalent 2n3584 GE TA2511 TA2512

2N3585

Abstract: 2N3584 TECHNICAL DATA 2N3584 JAN, JTX, JTXV 2N3585 JAN, JTX, JTXV MIL-PRF QPL DEVICES , Temperature Range Symbol 2N3584 2N3585 Units VCEO VCBO VCER VEBO IB IC PT 250 375 , otherwise noted) Characteristics Symbol Min. Max. Unit 2N3584 2N3585 V(BR)CEO 250 300 Vdc 2N3584 2N3585 V(BR)CER 375 500 Vdc OFF CHARACTERISTICS Collector-Emitter , = 1.5 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc ICEO 2N3584 2N3585 6 Lake Street
New England Semiconductor
Original
transistor 2n3584 2N3584 JAN MIL-PRF-19500/384

2N3585

Abstract: Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Symbol , Junction Temperature Range 2N3584 2N3585 Units VCEO VCBO VCER VEBO IB IC PT 250 375 , . Unit 2N3584 2N3585 V(BR)CEO 250 300 Vdc 2N3584 2N3585 V(BR)CER 375 500 Vdc , ICEO mAdc ICEX 1.0 1.0 mAdc IEBO 2N3584 2N3585 5.0 0.5 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 2N3584, 2N3585 JAN
Microsemi
Original
MIL-PRF-19500/

2n4240

Abstract: transistor 2n358 voltage vs. current tor types 2N3584 and 2N3585. Fig. 4 - Reverse-bias second breakdown characteristics for types 2N3584 and 2N3585. 9ZSS-3H7 92SS-SII8 Fig. 5 - Reverse-bias second breakdown characteristics for types 2N3584 and 2N3585. Fig. 6 - Reverse-bias second breakdown characteristics for types 2N3584 and 2N3585. CASE TEMPERATURE (T c ) - «C 92SS-2796 92SS-2666RI Fig. 7 - Dissipation , * 4.0 N 1 g 2.0 Fig. 11 - Typical rise time vs. collector current for types 2N3584 and 2N3585.
-
OCR Scan
transistor 2n358 92SS-3I20 92SS- 92CS-I2875RI

2n3583

Abstract: 2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high , 0.5 250 0.75 1.4 1.4 40 8.0 80 25 100 10 120 3.0 4.0 3.0 350 - 2N3585 500 300 6.0 2.0 2N3585 MIN MAX 1.0 3.0 5.0 0.5 300 0.75 1.4 1.4 40 8.0 80 25 100 10 120 3.0 4.0 , MHz pF μs μs μs mA R3 (2-September 2014) 2N3583 2N3584 2N3585 SILICON NPN
Central Semiconductor
Original

2N3584

Abstract: 2N3585 Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Symbol , Junction Temperature Range 2N3584 2N3585 Units VCEO VCBO VCER VEBO IB IC PT 250 375 , . Unit 2N3584 2N3585 V(BR)CEO 250 300 Vdc 2N3584 2N3585 V(BR)CER 375 500 Vdc , ICEO mAdc ICEX 1.0 1.0 mAdc IEBO 2N3584 2N3585 5.0 0.5 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 2N3584, 2N3585 JAN
Microsemi
Original

2N3585

Abstract: ic1a Inchange Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25 ·VCE , PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3585 , . MAX 300 UNIT V Inchange Semiconductor Product Specification 2N3585 Silicon NPN , Product Specification 2N3585 Silicon NPN Power Transistors 4 -
-
Original
ic1a

TG 2309

Abstract: 2N4240 Instruments TYPES 2N3583, 2N3584, 2N3585. 2N4240 N-P-N SILICON POWER TRANSISTORS 'switching characteristics , TYPES 2N3583. 2N3584. 2N3585, 2N4240 N-P-N SILICON POWER TRANSISTORS 'mechanical data , (2N3585, 2N4240) â'¢ Typ VcE(sat) of 0.25 V at Ià = 125 mA, lc = 1 A â'¢ Typ ton of 0.2 Ms, at 750 mA , 2N3585 2N4240 Collector-Base Voltage. 250 V* 375 V* 500 V* 500 V* Collector-Emitter , . Texas Instruments 2-309 TYPES 2N3583. 2N3584, 2N3585, 2N4240 N-P-N SILICON POWER TRANSISTORS
-
OCR Scan
TG 2309 TRANSISTOR BDX 538 2N35842N35852N4240 TEXAS 2N3583 1N914 2N3684

rca 2N4240

Abstract: 2N4240 ig h c o lle c to r c u rre n t RCA-2N3583*. 2N3584», 2N3585», and 2N4240», are silicon n-p-n , breakdown characteristics fo r types 2N3584 and 2N3585. Fig. B · Reverse-blas second breakdown , 2N3585. 164 070% A - 13 -" g ï » T | 3 a 7 s a û i o o i 7 i L 3 q | ~ 3 8 7 , times for types 2N3584 and 2N3585. Fig. 20 - Phase relationship between input and output currents , . 250 175 6 1 5 1 35 2N3584 375 250 6 2 5 1 2N3585 2N4240 500 300 6 2 S 1 V V V A A A W W/°C ·C 35 35
-
OCR Scan
2N35A 17160 rca TA2S12 2N35B4 2N3S85

RCA 431 transistor

Abstract: 2N3442 RCA BFT 19 A, B,C - 2N3585 2N6212* 40850 40851 2N5805 2N5840 2N6251 410 411 413 423 40852 431 40853 2N6514 , f 2N3440 1 BFT 19,A,B,c! BFT 28,A,B,C! |_ 2N5415 J 2N3585 _2N6212. 2N5240 BUX 16,A,B,C 2N5805 , ) 2N2102 2N3439 2N3878 BF 257 2N4036 BF 258 2N5320 BF 259 2N5322* 2N3585 2N5416 BFT 19,A,B,C. BFT , / 2N1479 207 TX2N1485 180 2N3055 407 TX2N3584 384 2N5039 439 2N1480 207 2 N1486 180 TX2N3055 407 2N3585
-
OCR Scan
2N6179 RCA 431 transistor 2N3442 RCA RCA 2N3055 transistor 2N3055 RCA 2n3773 rca rca 2n3055 2N3053 2N4037 2N5321 2N5323 2N6181
Abstract: 2N3585 COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE P. http://store.americanmicrosemiconductor.com/2n3585.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3585 2N3585 C O M PLEM ENTARY TRANSISTO RS M EDIUM - PO WER HIG H VO LTAG E PO WER Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to , 2N3585 $ 9.84 $ 7.87 $ 1.97 Total Price $ 7.87 Company Testimonials Store Policies Contact Us American Microsemiconductor
Original

2n3565 equivalent transistor

Abstract: 2n3565 time at high collector current The 2N3583», 2N3584», 2N3585», and 2N4240». are silicon n-p-n , 2N358S. Fig. 4 - Reverse-bias second breakdown characteristics fo r types 2N3584 and 2N3585. C A S , storage time vs. collectorcurrent to r types 2N358 and 2N3585. Fig. 13 - Typical fall time vs , vs. collect supply voltage fo r types 2N3584 and 2N3585. 2-17 POWER TRANSISTORS REPETITION , dc beta vs. collector current fo r types 2N3584and 2N3585. VCER^ U C KU R Y -R C LA Y MOOCL Ntt H
-
OCR Scan
transistor 2N3565 2N3565 NPN Transistor 2n358 TRANSISTOR 2N3565 pin 2N3585 Harris 2N3585 equivalent M302271 HD43S 9SC8-I29TSAI

200V transistor npn 10a

Abstract: 2N3583 I Datasheet 2N3583 CGVIiiu 1 2N3584 Cmnlcifinffliiff^nv Cmvm 2N3585 aciiiiwoimuviur %ofpa 145 Adams Avenue, Hauppauge, NY 11788 USA NPN SILICON TRANSISTOR Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The , and high voltage amplifier applications. MAXIMUM RATINGS (Tc=25°c) SYMBOL 2N3583 2N3584 2N3585 , °C/W ELECTRICAL CHARACTERISTICS fl>=25°C unless otherwise noted} 2N3583 2N3584 2N3585
-
OCR Scan
200V transistor npn 10a 200V 100MA NPN transistor 200V 100MA NPN

RCA 40313

Abstract: RCA413 15MHz Py = 5W BUX67B VCER(sus) =325V hFE» 10-150 @ 1 A tj = poivinz 2N3585 VCER(susl â'¢ 400 V hFE = 40 , BFT 19 A, B,C - 2N3585 2N6212* 40850 40851 2N5805 2N5840 2N6251 410 411 413 423 40852 431 40853 2N6514 , PRO-ELECTRON TYPES 2N3585 FAMILY [n-p-n] (silicon) fr- 15 MHz min; Pj = 35 W max BUX67 , 250 300 - 40 min. 0.1 10 1 3 300 0.75 1 0.125 1.4 1 2N3585* High-Breakdown Voltage, Fast Switch 300
-
OCR Scan
2N6177 2N6213 2N6079 2N6175 RCA 40313 RCA413 40328 RCA411 TQ-66 BUX66

2N3585

Abstract: SavantIC Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25 ·VCE , to case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification 2N3585 , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N3585 SavantIC Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors 4 -
-
Original

200V transistor npn 10a

Abstract: transistor 200V 100MA NPN 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed , 375 250 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 2N3585 500 300 6.0 2.0 UNITS V V V A A A W °C °C/W , MIN MAX 1.0 3.0 5.0 0.5 250 0.75 1.4 1.4 40 8.0 80 25 100 10 120 3.0 4.0 3.0 350 - 2N3585 MIN MAX , mA V V V V MHz pF s s s mA R2 (22-June 2011) 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR
Central Semiconductor
Original
200v 10a npn transistor

2N4240

Abstract: 2N6420 , Duty Cycle ^ 2.0% 2N3583 thru 2N3585.2N4240 NPN / 2N6420 thru 2N6423 PNP 2N3583 thru 2N3585,2N4240 , ) 2N3583 thru 2N3585.2N4240 NPN / 2N6420 thru 2N6423 PNP 2N3583 thru 2N3585,2N4240 ACTIVE REGION SAFE , 2N3585.2N4240 NPN / 2N6420 thru 2N6423 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , 200 mA, lB = 0 ) NPN ( lc = 50 mA, lB = 0 ) PNP 2N3583.2N6420 2N3584.2N6421 2N3585.2N6422 , 2N3584.2N6421 2N3585.2N6422 2N4240.2N6423 'ceo 10 5.0 5.0 5.0 mA Collector Cutoff Current ( VCB = 225 V.V«,^
-
OCR Scan
n642 N6423

2n4240

Abstract: 2N3585 MOTOROLA M OTOROLA SC XSTRS/R F 15E D I GGäMMbS T | NPN 2N3583 thru 2N3585 2N4240 , 2N6421 2N3585 2N6422 2N 4240 Sym bol VcEO 175 250 300 300 Vdc C o llec to , thru 2N3585 â'¢ 2N4240 â'" NPN 2N6420 thru 2N6422 â'" PNP Q | T ' 3 3 ' / / E L E C T R IC A , 2N3585 2N 6422 - 1.4 - 1.4 A ll A ll â'" 1.4 ~ 1.4 8 a $ e > E m itte , thru 2N3585 â'¢ 2N4240 â'" NPN 2N6420 thru 2N6422 â'" PNP E | " fV 3 3 " I / E L E C T R IC A
-
OCR Scan
2N3585 MOTOROLA
Abstract: LivePerson l l l l Submit ¡ ¡ ¡ 2N3585 Availability Buy 2N3585 at our online store ! 2N3585 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Power Type » Transistors; Bipolar; Si NPN Power 2N3585 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 300 V American Microsemiconductor
Original

2N3584

Abstract: 2n4240 M OTOROLA SC XSTRS/R F 15E D I GGäMMbS T | NPN 2N3583 thru 2N3585 2N4240 , 2N6421 2N3585 2N6422 2N 4240 Sym bol VcEO 175 250 300 300 Vdc C o llec to , thru 2N3585 â'¢ 2N4240 â'" NPN 2N6420 thru 2N6422 â'" PNP Q | T ' 3 3 ' / / E L E C T R IC A , 2N3585 2N 6422 - 1.4 - 1.4 A ll A ll â'" 1.4 ~ 1.4 8 a $ e > E m itte , thru 2N3585 â'¢ 2N4240 â'" NPN 2N6420 thru 2N6422 â'" PNP E | " fV 3 3 " I / E L E C T R IC A
-
OCR Scan
2n 6021 SCHEMA 3584 TCA 321 CB-72

TEXAS 2N3583

Abstract: 2n4240 Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Symbol , Junction Temperature Range 2N3584 2N3585 Units VCEO VCBO VCER VEBO IB IC PT 250 375 , . Unit 2N3584 2N3585 V(BR)CEO 250 300 Vdc 2N3584 2N3585 V(BR)CER 375 500 Vdc , ICEO mAdc ICEX 1.0 1.0 mAdc IEBO 2N3584 2N3585 5.0 0.5 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 2N3584, 2N3585 JAN
-
OCR Scan
37n50 2N3584 TEXAS

NPN Transistor 2N3055

Abstract: 2N3055 2N6420 2N3584 2N6421 2N3585 2N6422 2N4240 2N6423 Unit Collector-Emitter Voltage VCEO 175 250 300 300 V , °c NPN PNP 2N3583 2N6420 2N3584 2N6421 2N3585 2N6422 2N4240 2 N6423 Characteristic Symbol Max , 2N3585.2N4240 NPN / 2N6420 thru 2N6423 PNP 2N3583 thru 2N3585,2N4240 DC CURRENT GAIN 2N6420 thru 2N6423 DC , 2N3585,2N4240 ACTIVE REGION SAFE OPERATING AREA 2N6420 thru 2N6423 ACTIVE REGION SAFE OPERATING AREA
-
OCR Scan
NPN Transistor 2N3055 2n1488 2N344 2N5296 RCA RCA 40250 RCA 410 2N6211 20-MH 2N6078 2N6176 BUX67A
Showing first 20 results.