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2N3503 Datasheet

Part Manufacturer Description PDF Type
2N3503 Central Semiconductor Leaded Small Signal Transistor General Purpose Original
2N3503 Semelab PNP SILICON PLANAR EPITAXIAL TRANSISTORS Original
2N3503 Semelab PNP SILICON PLANAR EPITAXIAL TRANSISTOR Original
2N3503 Central Semiconductor PNP METAL CAN Transistors Scan
2N3503 Continental Device India Semiconductor Device Data Book 1996 Scan
2N3503 Crimson Semiconductor Transistor Selection Guide Scan
2N3503 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3503 General Diode Transistor Selection Guide Scan
2N3503 Micro Electronics Semiconductor Device Data Book Scan
2N3503 Motorola Motorola Semiconductor Datasheet Library Scan
2N3503 N/A Transistor Shortform Datasheet & Cross References Scan
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2N3503 N/A Transistor Replacements Scan
2N3503 N/A Cross Reference Datasheet Scan
2N3503 N/A Catalog Scans - Shortform Datasheet Scan
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2N3503 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3503 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3503 N/A Semiconductor Master Cross Reference Guide Scan
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2N3503

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209 , Voltage Emitter ­ Base Voltage 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V , Website: http://www.semelab.co.uk -65°C to +200°C 200°C Prelim. 4/99 2N3502 2N3503 2N3504 2N3505 , IE = 10mA IC = 10mA IE = 0 IC = 0 IB = 0 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 Max. Unit V V V -60 -45 -5 Semelab
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100MHZ
Abstract: 0.7W 2N3503-JQR-B PNP TO39 60V 0.6A 25 - 10/10m 200MHz 0.7W Searched , find a suitable part, please contact us. file:///I|/seme_lab/0510/2N3503.html [5/13/02 11:16:54 AM , 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR , Website: http://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 , Issue: 1 2N3502 2N3503 2N3504 2N3505 ELECTRICAL CHARACTERISTICS (25°C free air temperature Semelab
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200MH
Abstract: 2N3503 2N3503-JQR-B Polarity PNP PNP Package TO39 TO39 VCEO 60V 60V IC(cont) 0.6A 0.6A HFE(min) 25 25 HFE , 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209 , Voltage Emitter ­ Base Voltage 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V , 2N3503 2N3504 2N3505 ELECTRICAL CHARACTERISTICS (25°C free air temperature unless otherwise stated , Reverse Current IC = 10u IE = 10u IC = 10m IE = 0 IC = 0 IB = 0 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 Semelab
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Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR , ://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V -5V 2N3504 2N3505 1.3 W 0.4 W -65°C to +200°C 200°C Prelim. 4/99 2N3502 2N3503 2N3504 2N3505 , / 2N3504 Max. Unit -60 -45 IC = 0 IC = 10mA 2N3503 / 2N3505 V -5 2N3503 / 2N3505 , 10 Collector Reverse IE = 0 VCB = -50V 2N3503 / 2N3505 10 Current t = 150 Semelab
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transistor 2N3504
Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR , Website: http://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 , 3067 Issue: 1 2N3502 2N3503 2N3504 2N3505 ELECTRICAL CHARACTERISTICS (25°C free air , IC = 10mÎ' 2N3503 / 2N3505 V -5 2N3503 / 2N3505 -60 2N3502 / 2N3504 V -45 V , = -50V 2N3503 / 2N3505 10 Current t = 150°C VCB = -30V 2N3502 / 2N3504 10 Semelab
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Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR , ://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V -5V 2N3504 2N3505 1.3 W 0.4 W -65°C to +200°C 200°C Document Number 3067 Issue: 1 2N3502 2N3503 , = 0 2N3502 / 2N3504 Max. Unit -60 -45 IC = 0 IC = 10m 2N3503 / 2N3505 V -5 2N3503 / 2N3505 -60 2N3502 / 2N3504 V -45 V 0.07 10 VCE = -30V VBE = 0 2N3502 Semelab
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Abstract: 2N3503 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N3503 Tj hFE max hfe Industry Type 2N3503 Notes VCBO hFE A fT Polarity PNP VCEO 60 VCE Case Style TO-205AD/TO-39 Power Dissipation hFE min VCE A Visa & Mastercard Accepted! STI's Terms and Conditions 07-Sep-2010 Semiconductor Technology Semiconductor Technology
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small signal transistors
Abstract: 3DE D T ^ g a ? 0 0 3 1 1 7 5 T _ J H V 5 7 - 1 7 k 7# SGS-THOMSON Moe®[iLi(gïïl®res 2N3502/2N3503 2N3504/2N3505 S 6 S-THOMSON GÉNÉRAL PURPOSE AMPLIFIERS AND SWITCHES DESC RIPTIO N The 2N3502, 2N3503, 2N3504 and 2N3505 are silicon planar epitaxial PNP transistors in Jedec TO-39 (2N3502, 2N3503) and in Jedec TO-18 (2N3504,2N3505) metal cases. They are designed for high-speed saturated switching and general purpose applications. IN TER N A L S C H EM A TIC DIAG RAM ) >C -
OCR Scan
2N3052-2N3503-2N3504-2N3505 2N3052 2N3502/2N3503 0Q3117
Abstract: 2N3502 and 2N3503 a re in JED EC TO-5 packages. Device types 2N 3504 and 2N3505 a re in JED EC TO , Derate Derate Oerqte 2H 3502 and 2N3503 lin e a rly to 200 °C frti-o lr Itm ptrelur» a f fh i ra ft ol , that the case temperature does not exceed 142°C for the 2N3502 and 2N3503, S4°C for the 2N3504 and -
OCR Scan
0732N 2N3504a 2N350S 2N3S02 2N3S03
Abstract: 2N3503 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. IC = 0.6A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS Semelab
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Abstract: M axim um Ratings Type NPN PIMP Pd Am bient mW V cb Volts Electrical Characteristics @ 25°C V eb Volts VCE Volts H re @ Ic M in /M ax mA V C E (Sat) @ l c / l B Volts m A /m A ft M Hz Min Cob pF Max tON ns Max xO F F Case ns Max Geometry & Character ization Applicable Letter 2N3250 2N3250A 2N3251 2N3251A 2N3299 2N3300 2N3301 2N3302 2N3326 2N3485 2N3485A 2N3486 2N3486A 2N3502 2N3503 2N3504 2N3505 2N3671 2N3672 2N3673 360 360 360 360 800 800 360 360 800 360 360 -
OCR Scan
Abstract: 2N3498 2N3499 2N3500 2N3501 2N3502 2N3503 2N3506 2N3507 2N3554 2N3634 2N3635 2N3660 2N3661 2N3665 2N3666 Central Semiconductor
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2N3742 2N3724A 2N3725A 2N3734 2N3735 2N3743
Abstract: 80 0.01 10 2N3503 60 60 5 0.6 0.6 0.01 50 50 500 10 0.25 1 50 8 200 50 100 4 -
OCR Scan
2N2904 2N2904A 2N2905 2N2905A 2N3072 2N3073 2N3636
Abstract:  2N3583 2N3584 2N3585 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS 35 watts at 25°C 5A peak collector current OUTLINE DIMENSIONS (mm) 51 915 368 max. min. i -â'"1 90 ma*. 1 12.65 ma*. î 0.85 0.70 T â'" â'" 8.64 max ABSOLUTE MAXIMUM RATINGS TO-66 vcso Collector-base voltage (lE - 0) 2N3503 250 V 2N3584 375 V 2N3585 600 V VCCO(tui) Collector-emitter voltag« (lg = 0) 2N3583 175 V 2N3S84 250 V 2N358S 300 V V EBO Emitter-base voltage (lc= Q) 6 V 'c Collector current 2N35S3 1 A -
OCR Scan
2N3533 2N3534 2N3563 2N35B4 2N3584 NPN N3584 N3584/5 2N35S4/5 2N3S85 2N3S84/S 2N35B4/5
Abstract: 40 100 TO-39 2N3503 PNP 700 60 60 5 100/300 150 1.6 500/50 200 8 40 100 TO-39 2W3504 PNP 400 45 45 -
OCR Scan
2N3134 2N3135 2N3136 2n4036 star delta connection circuit diagrams 2M3251 2M3301 2N4036
Abstract: 8 200 50 100 2N3503 60 60 5 0.6 0.6 0.01 50 50 100 140 135 120 80 0.01 -
OCR Scan
2N363S 2N3637 2N4030
Abstract: 8.0 - - - 2N3503 PNP AMPL/SWITCH 60 60 5.0 0.01* 50 100 300 Central Semiconductor
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2N3444 2N3467 2N3468 2N3494 2N3495 2N3830
Abstract: /SWITCH 45 45 5.0 0.01" 30 100 300 150 10 0.40 150 200 8.0 . . . 2n3503 PNP AMPL/SWITCH 60 60 5.0 -
OCR Scan
n3742
Abstract: PN4355 60 100/400 10 0.15 150 30 100 â'" 625 1.0 TO-92 25 2N3503 60 115/300 50 0.25 50 8.0 200 100 700 -
OCR Scan
2N4403 BCY71 2N3644 PN3644 PN3693 PN3694 2N3645 2N3503 fairchild 2N4355 2N3642 T0105 T0-105
Abstract: 2N1132A 2N3502 2N3504 2N3120 2N3121 2N3671 2N3672 2N3251A 2N3251A JAN* 60 2N3250A 2N3503 2N3505 2N3072 -
OCR Scan
2N5042 N2904A 2N4033 2N2906 2N2221A 2N3110 2N1613 2N2219A 2N2222A
Abstract: 2N3503 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. IC = 0.6A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS -
OCR Scan
2N4034 T0-18 T0-39 40/12CI
Abstract: 2N3498 2N3499 2N3500 2N3501 2N3502 2N3503 2N3506 2N3507 2N3554 2N3634 2N3635 2N3660 2N3661 2N3665 2N3666 -
OCR Scan
2N3930
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