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2N3502 Datasheet

Part Manufacturer Description PDF Type
2N3502 Central Semiconductor Leaded Small Signal Transistor General Purpose Original
2N3502 Semelab PNP Silicon Planar Epitaxial Transistors Original
2N3502 Semelab PNP SILICON PLANAR EPITAXIAL TRANSISTORS Original
2N3502 Central Semiconductor PNP METAL CAN Transistors Scan
2N3502 Continental Device India Semiconductor Device Data Book 1996 Scan
2N3502 Crimson Semiconductor Transistor Selection Guide Scan
2N3502 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3502 General Diode Transistor Selection Guide Scan
2N3502 Micro Electronics Semiconductor Device Data Book Scan
2N3502 Motorola Motorola Semiconductor Datasheet Library Scan
2N3502 N/A Transistor Shortform Datasheet & Cross References Scan
2N3502 N/A Basic Transistor and Cross Reference Specification Scan
2N3502 N/A Shortform Transistor PDF Datasheet Scan
2N3502 N/A Transistor Replacements Scan
2N3502 N/A Cross Reference Datasheet Scan
2N3502 N/A Catalog Scans - Shortform Datasheet Scan
2N3502 N/A Shortform Transistor PDF Datasheet Scan
2N3502 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3502 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3502 N/A Semiconductor Master Cross Reference Guide Scan
Showing first 20 results.

2N3502

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR , Website: http://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 , Issue: 1 2N3502 2N3503 2N3504 2N3505 ELECTRICAL CHARACTERISTICS (25°C free air temperature , IE = 0 IE = 10ÂuÎ' IB = 0 2N3502 / 2N3504 Max. Unit -60 -45 IC = 0 IC = 10mÎ' 2N3503 / 2N3505 V -5 2N3503 / 2N3505 -60 2N3502 / 2N3504 V -45 V 0.07 10 VCE Semelab
Original
100MHZ 200MH 2N3503-JQR-B
Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209 , Voltage Emitter ­ Base Voltage 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V , Website: http://www.semelab.co.uk -65°C to +200°C 200°C Prelim. 4/99 2N3502 2N3503 2N3504 2N3505 , IE = 10mA IC = 10mA IE = 0 IC = 0 IB = 0 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 Max. Unit V V V -60 -45 -5 Semelab
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Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR , ://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V -5V 2N3504 2N3505 1.3 W 0.4 W -65°C to +200°C 200°C Prelim. 4/99 2N3502 2N3503 2N3504 2N3505 , Voltage Collector-Emitter Sustaining Voltage IC = 10mA IE = 0 IE = 10mA IB = 0 2N3502 , -60 2N3502 / 2N3504 V -45 V 0.07 10 VCE = -30V VBE = 0 2N3502 / 2N3504 0.05 Semelab
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transistor 2N3504
Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209 , Voltage Emitter ­ Base Voltage 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V , Website: http://www.semelab.co.uk -65°C to +200°C 200°C Document Number 3067 Issue: 1 2N3502 , Reverse Current IC = 10u IE = 10u IC = 10m IE = 0 IC = 0 IB = 0 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 2N3503 / 2N3505 2N3502 / 2N3504 Max. Unit V V Semelab
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Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR , Website: http://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 , 3067 Issue: 1 2N3502 2N3503 2N3504 2N3505 ELECTRICAL CHARACTERISTICS (25°C free air , IC = 10ÂuÎ' IE = 0 IE = 10ÂuÎ' IB = 0 2N3502 / 2N3504 Max. Unit -60 -45 IC = 0 IC = 10mÎ' 2N3503 / 2N3505 V -5 2N3503 / 2N3505 -60 2N3502 / 2N3504 V -45 V Semelab
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Abstract: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR , ://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V -5V 2N3504 2N3505 1.3 W 0.4 W -65°C to +200°C 200°C Document Number 3067 Issue: 1 2N3502 2N3503 , = 0 2N3502 / 2N3504 Max. Unit -60 -45 IC = 0 IC = 10m 2N3503 / 2N3505 V -5 2N3503 / 2N3505 -60 2N3502 / 2N3504 V -45 V 0.07 10 VCE = -30V VBE = 0 2N3502 Semelab
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Abstract: TYPES 2N3502 THRU 2N3505 P-N-P SILICON TRANSISTORS B U L L E T IN N O . DL-S 6 6 8 2 7 8 , M A R C , 2N3502 and 2N3503 a re in JED EC TO-5 packages. Device types 2N 3504 and 2N3505 a re in JED EC TO , SES CH IP P20 T exas IN C O RPO RATED In strum ents 4 TYPES 2N3502 THRU 2N3505 , that the case temperature does not exceed 142°C for the 2N3502 and 2N3503, S4°C for the 2N3504 and , ents O A LLA S . TE X A S 75222 P O S T O F F IC E B O X 5 0 1 2 TYPES 2N3502 THRU 2N3505 P-N-P -
OCR Scan
0732N 2N3504a 2N350S 2N3S02 2N3S03
Abstract: 3DE D T ^ g a ? 0 0 3 1 1 7 5 T _ J H V 5 7 - 1 7 k 7# SGS-THOMSON Moe®[iLi(gïïl®res 2N3502/2N3503 2N3504/2N3505 S 6 S-THOMSON GÉNÉRAL PURPOSE AMPLIFIERS AND SWITCHES DESC RIPTIO N The 2N3502, 2N3503, 2N3504 and 2N3505 are silicon planar epitaxial PNP transistors in Jedec TO-39 (2N3502, 2N3503) and in Jedec TO-18 (2N3504,2N3505) metal cases. They are designed for high-speed saturated switching and general purpose applications. IN TER N A L S C H EM A TIC DIAG RAM ) >C -
OCR Scan
2N3052-2N3503-2N3504-2N3505 2N3052 2N3502/2N3503 0Q3117
Abstract: M axim um Ratings Type NPN PIMP Pd Am bient mW V cb Volts Electrical Characteristics @ 25°C V eb Volts VCE Volts H re @ Ic M in /M ax mA V C E (Sat) @ l c / l B Volts m A /m A ft M Hz Min Cob pF Max tON ns Max xO F F Case ns Max Geometry & Character ization Applicable Letter 2N3250 2N3250A 2N3251 2N3251A 2N3299 2N3300 2N3301 2N3302 2N3326 2N3485 2N3485A 2N3486 2N3486A 2N3502 2N3503 2N3504 2N3505 2N3671 2N3672 2N3673 360 360 360 360 800 800 360 360 800 360 360 -
OCR Scan
Abstract: 60 4 0.01 30 15 300 2 0.25 1.2 50 10 130 50 100 30 130 50 1 1 2 300 2N3502 -
OCR Scan
2N2904 2N2904A 2N2905 2N2905A 2N3072 2N3073 2N3636 2N3635
Abstract: 60 60 5 100/300 150 1.6 500/50 200 8 50 110 T046 2N3502 PNP 700 45 45 5 100/300 150 1.6 500/50 200 8 -
OCR Scan
2N3134 2N3135 2N3136 2n4036 star delta connection circuit diagrams 2M3251 2M3301 2W3504
Abstract: 2N3073 60 60 4 0.01 30 15 30 2N3502 45 45 5 0.6 0.6 0.01 30 -
OCR Scan
2N363S 2N3637 2N4030
Abstract: 2N3498 2N3499 2N3500 2N3501 2N3502 2N3503 2N3506 2N3507 2N3554 2N3634 2N3635 2N3660 2N3661 2N3665 2N3666 Central Semiconductor
Original
2N3742 2N3724A 2N3725A 2N3734 2N3735 2N3743
Abstract: 6.0 0.50 75 100 300 150 10 0.40 150 150 8.0 - - - 2N3502 Central Semiconductor
Original
2N3444 2N3467 2N3468 2N3494 2N3495 2N3830
Abstract: 2n3501 NPN HIGH VOLTAGE 150 150 6.0 0.05 75 100 300 150 10 0.40 150 150 8.0 . . . 2n3502 PNP AMPL -
OCR Scan
n3742
Abstract: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS (BY ASCENDING VqEO) (Cont'd) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item DEV Po NPN CE NO. larity PNP VCEO (VCER) V Min hFE (hfe) Min/Max @IC rnA VCE(sat) V @ IC Max mA C0b PF Max »T MHz Min â'¢off ns Max PD TA Tc 25°C 25°C mW W Package No. 1 2N4403 40 100/300 150 0.40 150 8.5 200 255 625 â'" TO-92 2 BCY71 45 100/600 10 0.25 10 6.0 200 360 1.2 TO-18 3 2N3502 45 115/300 50 0.25 50 8.0 200 100 -
OCR Scan
2N3644 PN3644 PN3693 PN3694 BFY56 2N3642 2N3645 2N3503 fairchild 2N4355 T0105 T0-105
Abstract: SILICON TRANSISTORS SMALL SIGNAL TRANSISTORS SEMICONDUCTOR TECHNOLOGY ÃSE D T-39'Oì A13b4SA â¡â¡â¡â¡E44 D 5 g I II STI TYPE Polarity Power Dissipation @25°C MW T| (°C) VCB0 (volts) VCEO (volts) "FE® le VCE (SAT.)@IC hie -
OCR Scan
2N3633 2N3700 2N4419 2N4888 2N4889 N6007 MM1712 mm1614 MM1712 transistor N3503 2N3701 2N3724 2N3725
Abstract: 2N3416 2 N 3 4 I7 2N3502 2N3503 2N3504 2N3505 2N3678 2N3700 2N3701 2N3702 2N3703 2N3704 2N3705 2N37Ü6 -
OCR Scan
2N4033 2N3414 2N3415 2N3793 2N3794 2N3945 2N4029
Abstract: 7N350I 2N3502 2N3503 2N3504 NPN NPN PNP PNP PNP TO-39 TO-39 TO-5 TO-5 T O -18 150 ISO 45 60 45 -
OCR Scan
2N3395 2N3396 2N3398 2N3417 2N3439 2N3440
Abstract: 150 6.0 0.05 75 100 300 150 10 0.40 150 150 8.0 2N3502 PNP AMPL -
OCR Scan
2N3867 2N3868 2N3923 2N4000 2N4001
Abstract: 60 4 0.01 30 15 300 2 0.25 1.2 50 10 130 50 100 30 130 50 1 1 2 300 2N3502 -
OCR Scan
2N4034 T0-18 T0-39 40/12CI
Abstract: 60 60 5 100/300 150 1.6 500/50 200 8 50 110 T046 2N3502 PNP 700 45 45 5 100/300 150 1.6 500/50 200 8 -
OCR Scan
transistor 3504 npn 026 pnp
Abstract: SILICON TRANSISTORS SMALL SIGNAL TRANSISTORS SEMICONDUCTOR TECHNOLOGY ÃSE D T-39'Oì A13b4SA â¡â¡â¡â¡E44 D 5 g I II STI TYPE Polarity Power Dissipation @25°C MW T| (°C) VCB0 (volts) VCEO (volts) "FE® le VCE (SAT.)@IC hie -
OCR Scan
2N3930
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