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Part : 2N3265 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 40 Best Price : - Price Each : -
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2N3265 Datasheet

Part Manufacturer Description PDF Type
2N3265 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan
2N3265 API Electronics 25 Amp Transistors Scan
2N3265 Diode Transistor Silicon Transistors / TO-63 Transistors Scan
2N3265 Diode Transistor Transistor Short Form Data Scan
2N3265 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan
2N3265 General Transistor NPN Power Transistors Scan
2N3265 Motorola Motorola Semiconductor Datasheet Library Scan
2N3265 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3265 N/A Semiconductor Master Cross Reference Guide Scan
2N3265 N/A Shortform Electronic Component Datasheets Scan
2N3265 N/A Shortform Transistor Datasheet Guide Scan
2N3265 N/A Vintage Transistor Datasheets Scan
2N3265 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3265 N/A Transistor Shortform Datasheet & Cross References Scan
2N3265 N/A Basic Transistor and Cross Reference Specification Scan
2N3265 N/A Shortform Transistor PDF Datasheet Scan
2N3265 N/A GE Transistor Specifications Scan
2N3265 N/A Shortform Transistor PDF Datasheet Scan
2N3265 N/A Transistor Replacements Scan
2N3265 N/A Transistor Replacements Scan
Showing first 20 results.

2N3265

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 'j.ziiE.u ^>£mi-donauctoi iJ-^ioaucti, LJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3265 absolute maximum ratings at 25 , Temperature Range Lead or Terminal Temperature 1/8 Inch from Case for 10 Seconds . . . . OTES: 2N3265 , 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS 2N3265 UNIT MIN , * 2N3265 UNIT MAX tr Rise Time ts Storage Time 1.5 tf Fall Time 0.5 ton New Jersey Semiconductor
Original

40375

Abstract: 40327 41013 Pj = 175 W 1 =30A peak VCEO(â'ž). 125 V hfE = 20-60 @ 10A 660 2N3265 2N3263" VCER(SUS) - 110 V hFE , 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 , 2N3263 High-Current 2N3264 High-Current 2N TYPES 2N3265 High-Current 2N3266 High-Current 2N & PRO - , 1.2 15 1,2 1.8 15 2N3265 FAMILY [n-p-n] (silicon) fy = 20 MHz min;PT= 125Wmax 90 110 150 25-75 15 3
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OCR Scan
2N5320 2N5322 2N6178 2N6180 2N5323 40375 40327 40363 power inverter 140w dc to ac ITO-391 80-12SW

N4003

Abstract: SDT8756 80 6.0 30 SDT3104 TO-61-I 100 100 6.0 30 25 AMP SILICON NPN 2N3265 TO-63 150 90 I 70 20 , SDT31ÛI .50 30 15.0 30.0 86 2N3265 .50 30 15.0 30.0 86 2N3266 3.00 45 15.0 30.0 86 2N4002 3.00 45
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OCR Scan
SDT3204 SDT5835 SDT5836 SDT5837 SDT5838 SDT5865 N4003 SDT8756 SOT87 TO114

40636

Abstract: 2N3265 *'CER "'CBO @ VCB 2N TYPES 2N3263 High-Current 2N3264 High-Current 2N TYPES 2N3265 High-Current , 15 fin 80 120 20-80 15 3 20 - 120 1.2 15 1,2 1.8 15 2N3265 FAMILY [n-p-n] (silicon) fy = 20 MHz
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OCR Scan
2N3055 2N6253 2N6254 2N6371 2N4063 40636 40321 150w class ab audio amplifier 2n3055 audio 40346 2N3440 2N3439

40327

Abstract: 2N3055 41013 Pj = 175 W 1 =30A peak VCEO(â'ž). 125 V hfE = 20-60 @ 10A 660 2N3265 2N3263" VCER(SUS) - 110 V hFE , 2N3263 High-Current 2N3264 High-Current 2N TYPES 2N3265 High-Current 2N3266 High-Current 2N & PRO - , 1.2 15 1,2 1.8 15 2N3265 FAMILY [n-p-n] (silicon) fy = 20 MHz min;PT= 125Wmax 90 110 150 25-75 15 3
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OCR Scan
25w audio to3 2N6482 2N6354 2NS038 2N5672 2N6033 2N3053

2N3265

Abstract: 2N5885 Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO (V) 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00 10.0 30/120 10.0 1.00 10.0 30/120 10.0 1.00 10.0 30/120 10.0 1.00 10.0 (MHz) PT MAX (W) 20.0 20.0 4.0 4.0 40.0 40.0 40.0 40.0 100.0 100.0 200.0 200.0 200.0 200.0
Solitron Devices
Original
DSASW0036858

2N3055 power amplifier circuit

Abstract: 40636 TYPES 2N3263 High-Current 2N3264 High-Current 2N TYPES 2N3265 High-Current 2N3266 High-Current 2N & , 15 3 20 - 120 1.2 15 1,2 1.8 15 2N3265 FAMILY [n-p-n] (silicon) fy = 20 MHz min;PT= 125Wmax 90 110
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OCR Scan
2N5495 2N5492 2N6103 2N3055 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 general purpose 2n3055 transistors 2N6292 2N6111 2N6269 2N6386 TA8201
Abstract: BIPOLAR NPN PLANAR POWER TRANSISTORS AMPS hFE min/max m â  c < < o PEAK o O CO L 1U O J > o m > DEVICE TYPE PACKAGE VCE (sat) max VOLTS â  @ 'b c A A TO-63 2N3265 90 20.0 25- 55 15.0/2.0 1.0 20.0/2.0 O I« 2N3266 60 20.0 20- 80 15.0/3.0 1.6 20.0/2.0 ÃA jl 2N3597 40 20.0 40-120 10.0/2.0 1.5 20.0/2.0 2N3598 60 20.0 40-120 10.0/2.0 1.5 20.0/2.0 2N3599 80 -
OCR Scan
2N4003 2N4210 2N4211 2N6060 2N6215 2N6278

RCA1A18

Abstract: rca 40408 15 15 3 3 20 20 120 150 1.2 0.75 15 15 1.2 1.2 2N3265 FAMILY (n-p-n) High Curren , @ V C E 2IM3266 2N3265* 60 90 120 150 120 150 1.2 0.75 15 15 1.2 1.2 J A N
RCA
Original
RCA1A18 RCA1A17 rca 40408 40409 rca 2n3053A complementary rca 40407 2N697 2N1613 2N1711 2N2270 2N699 2N3053A

2N3263

Abstract: 2N3265 TYPES 2N3263, 2N3264. 2N3265. 2N3266 N-P-N SILICON POWER TRANSISTORS ' electrical characteristics at 25 , 3 0 1 2 · D A LLA S. T E X A S 75222 TYPES 2N3263, 2N3264, 2N3265. 2N3266 N-P-N SILICON POWER , temperature (unless otherwise noted) 2N3263 2N3264 2N3265 2N3266 120 V 150 V 120 V "C o llec to r-E m itte r , , 2N3265, 2N3266 N-P-N SILICON POWER TRANSISTORS M AXIMUM SAFE OPERATING AREA 2N 3263, 2N 3 2 6 4 2
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OCR Scan
jp6c 2N326S

TO63 package

Abstract: 2N5250 NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE VCEO (sus) VOLTS Ic (max) AMPS hFE@ Ic/ VCE (min/max @ A/V) VcE(sat) @IC/IB (V @ A/A) p * WATTS fx (MHz) NPN 2N3265 90 20 25-55@15/2 l@20/2 100 20 TO-63 2N3266 60 20 20-80@15/3 1.6@20/2 100 20 i 2N3846 200 20 40-200@5/3 .75@10/1.6 150 10 2N3847 300 20 40-200@5/3 .75@10/1.6 150 10 A 2N4002 80 30 20-80@15/4 1.2@30/4 100 30 2N4003 100 30 20-80@15/4 1.2@30/4 100 30 2N5539 130 20 20-75@10/5 .8@15/1.5 100 20
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OCR Scan
2N6046 2N6047 2N6048 2N3150 2N5250 2N5927 TO63 package transistor 114 C 114 transistor TRANSISTOR C 2570 2N6279 2N4865

2N5437

Abstract: 2N2820 - "I ,. 00^3592 API ELECTRONICS INC ".j"."- _ _ 26C 00236 D "7^-33 API ELECTRONICS INC 2b DE^| DDMBS^a DODOSafc. ⡠-collector current =25 amps npn types Device No Case VCBO Volts vceo (sus> Volts hp vce 0Tr "c/w Ft MHz Volts Min Max ic Vce (sat) Vbe (sat) @ ic @ ib 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-63 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 100 150 200 150 85 60 80 120 140 160 180 100 150 200 90 60 60 80 100 120 140 150 10 10
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OCR Scan
2N5437 2N5883 2N5884 2N6436 2N6437 2N6438 AP1072
Abstract: 2N3265 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)90ã V(BR)CBO (V)150 I(C) Max. (A) Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.55 @I(C) (A) (Test Condition)15 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq20M @I(C) (A) (Test Condition) @V(CE) (V) (Test American Microsemiconductor
Original

2N5004

Abstract: TU105-B01 -3 T O -lll/I TO-228AC TO-228AC - 180.0 S2N2658-1 2N3265 2N3599 2N3599 2N3658 S2N3749 S2N3749
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OCR Scan
SDT55907 2N5004 TU108-B01 TU206-B01 TU105-B01 2N5672 solitron 2N5038 2N5074 2N5153 2N6307 SDT3229

2N2820

Abstract: 2N2821 â'¢ 'I _ 0043592 A P I ELECTRONICS INC _'_*'" 26C 00236 Q T p'TTLEC'TFOTITTINC â'" lb ]>E|"DD4^S^"000D53J'D f * ' " - â  " - COLLECTOR CURRENT =25 AMPS NPN TYPES Device No Case vcbo Volts VCEO (sus) Volts vebo Volts h] fe vce ic 0TP "C/W Ft MHz Min Max Vce (sat) Vbe (sat) @ ic § ib 2N2820 TO-63 100 100 10 10 50 3 15 1.5 2.5 15 2.2 1 .6 2N2821 TO-63 150 150 10 10 50 3 15 1.5 2.5 15 2.2 1 .6 2N2822 TO-6 3 200 200 10 10 50 3 15 1.5 2.5 15 2.2 1 .6 2N3265 TO-63 150 90 7 20 55 2 15 .75
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OCR Scan
AP1081 AP1117

TO-59 Package

Abstract: 2n3265 3.0/0.3 5.0/0.5 5.0/0.5 5.0/0.5 TO-63 PACKAGE DEVICE TYPE 2N3265 2N3266 2N3597 2H3598 2N3599
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OCR Scan
TO-59 Package TO61 package 80240C 25120 2N2877 2N2878 2H2879 2N3996- 2N3997 2M2880

2N3055

Abstract: 2N6179 APPLICATION INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range Peak Voltage Required Up to 0.2 A Peak 0.2 to 1 A Primary Current Rec 1 to 4 A uirement 4 to 20 A >20 A 60 Hz to 50 kHz 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 - 60 to 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 2N6032 150 to 450V 2N3440 2N5416
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OCR Scan
2N5840 2N3773 voltage regulator push pull inverter 2n3055 voltage regulator 431 regulator 40851 2N3585 2N6212 2N5805 2N6251 2N6514

2N2119

Abstract: 2N2764 BIG IDEAS IN PowerTech Replacement Parts Are Available For The Following Part Numbers: PART # PART # PART # PART # BIG POWER 2N1936 2N1937 2N2109 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119 2N2123 2N2124 2N2125 2N2126 2N2130 2N2131 2N2132 2N2133 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769 2N2770 2N2771 2N2772 2N2775 2N2776 2N2777 2N2778 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825 2N3149 2N3150 2N3151 2N3260 2N3265
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OCR Scan
2N6062 16-430 164-08 16420 164-16 2N3470 2N3471 2N3472 2N3743 2N3848 2N3849

RCA 40250

Abstract: 8350a 41013 Pj = 175 W 1 =30A peak VCEO(â'ž). 125 V hfE = 20-60 @ 10A 660 2N3265 2N3263" VCER(SUS) - 110 V hFE , 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265
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OCR Scan
8203B RCA 40250 8350a Transistors RCA 41013 40250 RCA 2N62* rca to3 SUSI-65V BUX18 2N6177A TA8764 2N5240 TA8900

SF1020

Abstract: 2N5000 SFT5659 50 5.0 70 30 25 TO-59 20 90 2N3265 20 15 20 125 25 TO-63 30 90 2N5330 40 10 80 80 100 TO
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OCR Scan
2N4300 2N4998 2N5000 SFT4300 2N3867 2N5334 SF1020 SFT2014 2M3996

RCA1A18

Abstract: BUL 128 A 3 20 20 120 150 1.2 0.75 15 15 1.2 1.2 2N3265 FAMILY (n-p-n) High Current f j = 20 MHz min; P j := 125 W max 2N3266 2N3265* 60 90 120 150 2 0 -8 0 2 5 -7 5 15 15 3 2 20 20 120 150 JEDEC TO
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OCR Scan
BUL 128 A 40317 2N1893 2N2405 92CS-2022

rca 2n3055

Abstract: rca 40327 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 2N6032 150 to 450V , *'CER "'CBO @ VCB 2N TYPES 2N3263 High-Current 2N3264 High-Current 2N TYPES 2N3265 High-Current , 15 fin 80 120 20-80 15 3 20 - 120 1.2 15 1,2 1.8 15 2N3265 FAMILY [n-p-n] (silicon) fy = 20 MHz
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OCR Scan
rca 2n3055 rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note transistor RCA 528 2N3439 RCA TQ-66 2N6177 2N5415 2N358S 2N6213 2N6079

40410

Abstract: MAX766 41013 Pj = 175 W 1 =30A peak VCEO(â'ž). 125 V hfE = 20-60 @ 10A 660 2N3265 2N3263" VCER(SUS) - 110 V hFE , 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265
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OCR Scan
40410 MAX766 40362 40394

2N6354

Abstract: BD277 41013 Pj = 175 W 1 =30A peak VCEO(â'ž). 125 V hfE = 20-60 @ 10A 660 2N3265 2N3263" VCER(SUS) - 110 V hFE , 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265
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OCR Scan
BD277 to220aa 2n3283 2n6479 BD278 BD27SA 2N6107 2N6078 2N6077 2N6110

rca1a18

Abstract: 15 15 3 3 20 20 120 150 1.2 0.75 15 15 1.2 1.2 2N3265 FAMILY (n-p-n) High Curren , @ V C E 2IM3266 2N3265* 60 90 120 150 120 150 1.2 0.75 15 15 1.2 1.2 J A N
RCA
Original
RCA1A07 RCA1A01 RCA1A06

RCA 40636 transistor

Abstract: rca 40636 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 , "'CBO @ VCB 2N TYPES 2N3263 High-Current 2N3264 High-Current 2N TYPES 2N3265 High-Current 2N3266 , 20-80 15 3 20 - 120 1.2 15 1,2 1.8 15 2N3265 FAMILY [n-p-n] (silicon) fy = 20 MHz min;PT= 125Wmax 90
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OCR Scan
RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca 220v 300w ac regulator circuit 2N3055 RCA ITO-391- ITO-220 ITO-2201 ITO-31 2N1482 2N5786

2N5672

Abstract: 2N6480 41013 Pj = 175 W 1 =30A peak VCEO(â'ž). 125 V hfE = 20-60 @ 10A 660 2N3265 2N3263" VCER(SUS) - 110 V hFE , 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265
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OCR Scan
2N6480 2n5038 complement complement of 2N3053 2N5783 2N5785 2N5782 2N5578 2N5575

2N3055

Abstract: 40327 2N3263 High-Current 2N3264 High-Current 2N TYPES 2N3265 High-Current 2N3266 High-Current 2N & PRO - , 1.2 15 1,2 1.8 15 2N3265 FAMILY [n-p-n] (silicon) fy = 20 MHz min;PT= 125Wmax 90 110 150 25-75 15 3
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OCR Scan
2N344 2N6478 40412 BDY71 2N3439 complementary 2N5496 2N3771 2N5295 2NS296

RCA 40636 transistor

Abstract: rca 40636 *'CER "'CBO @ VCB 2N TYPES 2N3263 High-Current 2N3264 High-Current 2N TYPES 2N3265 High-Current , 15 fin 80 120 20-80 15 3 20 - 120 1.2 15 1,2 1.8 15 2N3265 FAMILY [n-p-n] (silicon) fy = 20 MHz
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OCR Scan
RCA 40325 40327 rca BUX 115 rca 40363 RCA 40321 rca 40412 2N6175 BUX67 2N3583 BUX66 2N6211
Showing first 20 results.