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2N3251AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 visit Digikey Buy
2N3251A Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
JAN2N3251A Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
JANTX2N3251A Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-18, 3 PIN visit Digikey Buy
JAN2N3251AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 visit Digikey Buy
JANTXV2N3251AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 visit Digikey Buy

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Part : 2N3251 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $1.79 Price Each : $2.09
Part : 2N3251A Supplier : SPC Multicomp Manufacturer : Newark element14 Stock : 915 Best Price : $0.40 Price Each : $1.10
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Part : 2N3251A Supplier : Motorola Manufacturer : Bristol Electronics Stock : 148 Best Price : $0.60 Price Each : $1.8750
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Part : 2N3251A Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 179 Best Price : $0.51 Price Each : $1.0140
Part : 2N3251A Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 189 Best Price : £0.3580 Price Each : £0.6060
Part : 2N3251 Supplier : Motorola Manufacturer : New Advantage Stock : 41 Best Price : - Price Each : -
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2N3251 Datasheet

Part Manufacturer Description PDF Type
2N3251 Central Semiconductor PNP SILICON TRANSISTOR Original
2N3251 Microsemi Pnp Bipolar Transistor Original
2N3251 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=100min / fT(Hz)=300M / Pwr(W)=0.36 Original
2N3251 Boca Semiconductor GENERAL PURPOSE TRANSISTOR (PNP SILICON) - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=100min / fT(Hz)=300M / Pwr(W)=0.36 Scan
2N3251 Central Semiconductor BJT, PNP, Small Signal Transistor, IC 0.2A - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=100min / fT(Hz)=300M / Pwr(W)=0.36 Scan
2N3251 Central Semiconductor PNP Metal Can Transistors - Saturated Switch / Low Level Amplifier Scan
2N3251 Continental Device India Semiconductor Device Data Book 1996 Scan
2N3251 Crimson Semiconductor Transistor Selection Guide Scan
2N3251 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3251 General Diode Transistor Selection Guide Scan
2N3251 Micro Electronics Semiconductor Devices Scan
2N3251 Motorola Motorola Semiconductor Datasheet Library Scan
2N3251 Motorola European Master Selection Guide 1986 Scan
2N3251 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3251 N/A Semiconductor Master Cross Reference Guide Scan
2N3251 N/A Shortform Electronic Component Datasheets Scan
2N3251 N/A Shortform Transistor Datasheet Guide Scan
2N3251 N/A Vintage Transistor Datasheets Scan
2N3251 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3251 N/A Transistor Shortform Datasheet & Cross References Scan
Showing first 20 results.

2N3251

Catalog Datasheet MFG & Type PDF Document Tags

2N3251

Abstract: transistor 2N3251 Datasheet 2N3250 ^^ ^ m â"¢ 2N3250A fflhfiii 1 2N3251 wenirui CAIMIiiAnfllltf^ikB 2N3251A , 2N3250 2N3250A 2N3251 2N3251A SYMBOL UNITS Collector-Base Voltage Vcbo 50 60 V , (2N3251, 2N3251 A) 80 hFE VCE=1.0V, lc=1.0mA (2N3250, 2N3250A) 45 (2N3251, 2N3251A) 90 , hpE Vce=10V, lC=10mA (2N3250, 2N3250A) (2N3251, 2N3251A) hFE Vce=10V, lc=50mA (2N3250, 2N3250A) (2N3251, 2N3251 A) fj VCe=20V, lC=1 OmA, f=100MHz(2N3250, 2N3250A) (2N3251, 2N3251A) Cobo Vcb=10V, f
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OCR Scan
transistor 2N3251 100MH

2N3251

Abstract: 2N3250 equivalent 1.0 mhz) Cibo â'" 8.0 pF 2N3250 2N3251.A ELECTRICAL CHARACTERISTICS (continued) (Ta - 25°C unless , ) 2N3250, 2N3251 2N3251A V(BR)CEO -40 -60 - Vdc Collector-Base Breakdown Voltage , Ratio dC = -0.1 mAdc, VCE = -10 Vdc) 2N3250 2N3251, 2N3251A hFE 40 80 - flC = -1.0 mAdc, VCE = -1.0 Vdc) 2N3250 2N3251, 2N3251A 45 90 _ ÃC = -10 mAdc, Vce = â'"1.0 Vdc)(1) 2N3250 2N3251, 2N3251A 50
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2N3250 equivalent JAN2N3251A TB175 2N3250A MOTOROLA 2n3250 bsc 2IM3251 2N32S1A

2n3251

Abstract: UNIT 2N3251A >60 V 0.6 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N3250_A_2N3251 , SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250A 2N3251A 60 60 Collector Emitter Voltage VCEO 2N3250 2N3251 40 Collector Base Voltage VCBO 50 , Emitter Voltage *VCEO IC=10mA, IB=0 2N3250 2N3251 >40 Collector Base Voltage VCBO
Continental Device India
Original
C-120 311003D

2N3251A

Abstract: 2N3251 PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250A 2N3251A 60 60 Collector Emitter Voltage VCEO 2N3250 2N3251 40 Collector Base Voltage VCBO 50 Emitter , *VCEO IC=10mA, IB=0 2N3250 2N3251 >40 Collector Base Voltage VCBO IC=10µA, IE=0 >50 , 0.9 V 1.2 V IC=10mA, IB=1mA IC=50mA, IB=5mA MIN 2N3250A UNIT 2N3251A >60 V
Continental Device India
Original
ISO/TS16949

2N3251

Abstract: 2N3251 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N3251 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3251 at our online store! 2N3251 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3251 Information Did you Know , for Parts Request a Quote Test Houses 2N3251 Specifications Military/High-Rel : N V(BR)CEO (V
American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

2n3251a

Abstract: 2N3250 2N3251 2N3250A 2N3251A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c , , 2N3251) 50 IC=10μA (2N3250A, 2N3251A) 60 IC=10mA (2N3250, 2N3251) 40 IC=10mA (2N3250A, 2N3251A , V V V V V V V V V 2N3251 2N3251A MIN MAX 80 90 100 300 30 - R1 (4-March 2014) 2N3250 2N3251 2N3250A 2N3251A SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3250 2N3251 2N3250A 2N3251A SYMBOL TEST CONDITIONS MIN MAX
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Original

2N3251

Abstract: 2N3250 2N3251.A E L E C T R I C A L C H A R A C T E R I S T I C S (continued) H a - 25°C u n le ss o th e rw , 2N3250 2N3251 -4 0 -5 0 - 5 .0 -2 0 0 0.36 2.06 1.2 6.9 - 6 5 to +200 2N 3 25 1A -6 0 -6 0 U n it Vdc Vdc Vdc m Adc W att mW/°C W atts m W /X X 2N3250 2N3251,A* C A S E 22-03, S T Y LE 1 TO-18 (TO-2 O6AA , Ratio d e = - 0.1 m A d c, V c e = - 1 0 Vdc) 2N3250, 2N3251 2 N 3 251A 2N3250, 2N3251 2 N 3 251A , V (B R)EBO >CEX *BL - - h FE 2N3250 2N3251, 2 N 3251A 2N3250 2N3251, 2 N 3 251A 2N3250
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OCR Scan
251A 100KC L3L75S4
Abstract: ) DESCRIPTION SYMBOL 2N3250A 2N3251A 60 UNIT 60 V V 2N3250 2N3251 >40 2N3250A 2N3251A , Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N3250, A 2N3251, A TO-18 Metal Can , Emitter Voltage VCEO 2N3250 2N3251 40 Collector Base Voltage VCBO 50 Emitter Base , TRANSISTORS 2N3250, A 2N3251, A TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless , 2N3251, A MIN MAX UNIT 40 80 IC=1mA,VCE=1V 2N3250, A 2N3251, A 45 90 IC=10mA,VCE Continental Device India
Original

2N3250

Abstract: 2N3251A = -0 .1 mAdc, Vce = " 10 Vdc) hFE 2N3250 2N3251, 2N3251A 2N3250 2N3261, 2N3251A 2N3250 2N3251, 2N3251A 2N3250 2N3251, 2N3251A v CE(sat) - - v BEIsat) -0 .6 - 2N3250 2N3251, 2N3251A 250 300 - - -0 , , 2N3251 2N3251A 2N3250, 2N3251 2N3251A V(BR)CEO v (BR)CBO V(BR)EBO *CEX 'BL -4 0 -6 0 -5 0 -60 -5 .0 , 0 m A, Vce 10 V, f - 1.0 kHz) 2N3250 2N3251, 2N3251A 2N3250 2N3251, 2N3251A 2N3250 2N3251, 2N3251A , ) 100 4.0 10 2N3250 2N3251, 2N3251A - - Symbol td tr 2N3250 2N3251, 2N3251A ts tf Max 35
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OCR Scan
2N32S1

2n3251

Abstract: 2N3250 2N3251,A* M A X IM U M RA TIN G S Symbol 2N3250 2N3251 2N3251A Unit C o , 2N 3250, 2N3251 - 1 0 m Adc) v ( B R )C E O 2N3251A C o lle c t o r -B a s e B r e a k d o w n V o lt a g e 2N3250, 2N3251 -4 0 â'" Vdc -6 0 -5 0 -6 0 â'" Vdc V (B , )C B O 2N3251, 2N 3 25 1A IIC = 90 â'" 2N3251A E m it t e r - B a s e B r e a k d o , n c t io n to A m b ie n t *2N3251A is a Motorola designated preferred device. = 25°C u n l
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OCR Scan
10DKC

2N3261

Abstract: 2N3261A 2N3250, A 2N3251, A 2N32E0 2N3250A 2N3251 2N3251A 40 50 5.0 200 0.38 2.0B 1.2 6.9 -6B to + 200 60 60 , Forward Current Transfer Radio (1) flc - 0,1 mAdo, V c e " 1-0 Vdc) hpE 2N3250, 2N3250A 2N3251, 2N3251A 2N3250, 2N3250A 2N3261, 2N325TA 2N3260, 2N3250A 2N 326Î, 2N3251A 2N3250, 2N3250A 2N3251, 2N3251A V c e (a , | 2N3250, 2N3251 2N3250A, 2N3251A 2N3250, 2N32S1 2N3250A, 2N32S1A V(BR)CEO V(0R)CBO V(SRJEBO IC EX bl , Ratio Oc = 1.0 mA, V C e " 10 V, f 1.0 kHz) 2N3260, 2N3260A 2N3251, 2N3251A 2N3260, 2N3250A 2N3251
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OCR Scan
2N3261A 2N32M

2N3251

Abstract: 2N3250A SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250A 2N3251A 60 60 Collector Emitter Voltage VCEO 2N3250 2N3251 40 Collector Base Voltage VCBO 50 , Voltage *VCEO IC=10mA, IB=0 2N3250 2N3251 >40 Collector Base Voltage VCBO IC=10µA, IE , 0.5 V 0.9 V 1.2 V IC=10mA, IB=1mA IC=50mA, IB=5mA MIN 2N3250A UNIT 2N3251A
Continental Device India
Original
Abstract: TYPES 2N3250, 2N3250A, 2N3251. 2N3251A P-N-P SILICON TRANSISTORS B U LL E T IN N O . D L -S 6 7 9 , TYPES 2N3250, 2N3250A. 2N3251. 2N3251A P-N-P SILICON TRANSISTORS *electrical characteristics a t 25 , Low-Level hFE: 80 Min at 100 /¿A (2N3251 and 2N3251A) ` m echanical d a ta ^absolute m a x im u m ra tin g s a t 25°C fre e -a ir tem p e ra tu re (unless o th e rw ise noted) 2N3250 2N3251 , /¿A, l E = 0 lc = -10 mA, lg = 0, l E = -10 /xA, lc = 0 See Note 4 2N3250 2N 32S0A 2N3251 2N3251A -
OCR Scan
Abstract: SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3 -4 8 2N3250, 2N3251.A AUDIO SMALL-SIGNAL CHARACTERISTICS , 2N3250, 2N3251.A FIGURE 13 - f j AND rfc'Cc versus lc FIGURE 14 - 30 MC EQUIVALENT CIRCUIT VCe = -10 V , Symbol v CEO VCBO vebo 2N3250 2N3251 -4 0 -5 0 2N3250 2N3251,A* 2N3251A -6 0 -6 0 -5 .0 -2 0 0 , o lta g e OC = - 1 0 ¿iAdc) 2 N 3 2 5 0 , 2N3251 2N 3251A 2 N 32 5 0, 2N 3251 2N 3251A V(B R , TRAN SISTO R S, FETs AND DIODES 2N3250, 2N3251 ,A ELECTRICAL CHARACTERISTICS I n p u t Im p e d a -
OCR Scan

"pnp switch"

Abstract: 2N3250 MMCF3250, MMCF3251, NIMCF3250A (SILICON) MMCF3251A Flip-Chip â'" PNP silicon Annular transistor family for high-speed switching and amplifier applications similar to the 2N3250.A and 2N3251.A. Primary Electrical Features: â'¢ High speed switching characteristics similar to 2N3251. FLIP-CHIP PNP SWITCH AND AMPLIFIER TRANSISTORS MAXIMUM RATINGS Rating Symbol MMCF3250 MMCF3251 MMCF3250A MMCF3251A Unit Collector-Emitter Voltage VCEO 40 60 Vdc Collector-Base Voltage VCB 50 60 Vdc Emitter-Base
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IMMCF3250

MPQ6700

Abstract: 2N3904 die CZT3906 MMPQ3906 MMPQ6700 MPQ3906 MPQ6700 2N3251 CP592-CEN1085-CT CP592-CEN1085-WN CP592-CMPT3906-CT CP592-CMPT3906-WN CP592-2N3251-CT CP592-2N3906-WN Page 2 of 2 PCN #107 Notification
Central Semiconductor
Original
CP192V 2N3904 CMPT3904 CMST3904 CMUT3904 CMXT3904 2N3904 die 2N3906 die CP192-CMPT3904-CT CP592-2N3251-CT MPQ3904 CP592V CP392V CP792V

1507-50

Abstract: 2N4025 2N2907A 2N3964 2N3962 2N3965 2N3964 2N3962 2N3965 2N3251 2N3251 2N3962 2N3962 2N3962 2N3962 45 45 60 60
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OCR Scan
2N4025 1507-50 DUAL TRANSISTORS IN TO77 PACKAGE 2N3726 2N3727 2N3802 2N3803 2N3804 2N3804A

2N3251

Abstract: New England Semiconductor 2N3251 ^IP NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL TRANSISTOR â'¢ HIGH VOLTAGE â'¢ HIGH CURRENT GAIN â'¢ HIGH FREQUENCY MAXIMUM RATINGS RATINGS SYMBOL VALUE UNITS Collector-Emitter Voltage VcEO -40 Vdc Collector-Base Voltage VCB -50 Vdc Emitter-Base Voltage VEB -5.0 Vdc Collector Current â'" Continuous - Peak(l) Ic -200 mAdc Total Power Dissipation @ Tc = 25UC Derate above 25°C Pn , : - 2N3251 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristics [ Symbol
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New England Semiconductor

2n3054 pnp

Abstract: TO77 package "2N3251" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N3251 2N3251A 2N3251A-JQR-B 2N3251CSM 2N3251CSM-JQR-B 2N3251DCSM Polarity PNP PNP PNP PNP PNP PNP , Package Polarity FET: Diode: 2N3251AQF Quad Transistor Quad Ceramic Flat Pack PNP VDSS IC(cont) ID(cont
Semelab
Original
2n3054 pnp TO77 package 2N3411 2N3054 2N3054A 2N3054-JQR-B 2N3250CSM 2N3250DCSM

2N3251

Abstract: 2N3251 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100) Nom. 3 1 2 TO18 (TO206AA) PINOUTS 1 ­ Emitter Parameter 2 ­ Base 3 ­
Semelab
Original

2N3252

Abstract: 2N3251 -18) 283 7/76 2N 3250 2N3251 THERMAL DATA 'th i-case "^th j-amb Thermal resistance junction-case
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OCR Scan
2N3252 N3251

2n3250

Abstract: 2N32 2N3250 2N3251 AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3250 and 2N3251 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are suited for switching and amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T s t g, T j January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 °C at
STMicroelectronics
Original
2N32 2N3250-2N3251

2n3252

Abstract: 3DE D a» â  7c ]237 00311b7 ü â  Ã®Bc ^p37')5 SCS-THOM SON iU E T O O H T B H eS 2N3250 2N3251 S G S-THOMSON AMPLIFIERS AND SWITCHES DESC RIPTIO N - T h e 2 N 3 2 5 0 and 2N 32 51 are silicon planar epitaxial P N P transistors in Jedec T O -1 8 m etal case. T h ey are suited for switching and amplifier applications. ABSOLUTE MAXIM UM RATINGS Sym bol P a r a m e te r V a lu e U n it VcBO Collector-base Voltage ( I e = 0) -5 0 V VcEO
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OCR Scan
Abstract: MMCF3250, MMCF3251, NIMCF3250A (SILICON) MMCF3251A Flip-Chip â'" PNP silicon Annular transistor family for high-speed switching and amplifier applications similar to the 2N3250.A and 2N3251.A. Primary Electrical Features: â'¢ High speed switching characteristics similar to 2N3251. FLIP-CHIP PNP SWITCH AND AMPLIFIER TRANSISTORS MAXIMUM RATINGS Rating Symbol MMCF3250 MMCF3251 MMCF3250A MMCF3251A Unit Collector-Emitter Voltage VCEO 40 60 Vdc Collector-Base Voltage VCB 50 60 Vdc Emitter-Base -
OCR Scan
DQ311
Showing first 20 results.