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2N3055 Datasheet

Part Manufacturer Description PDF Type
2N3055 Comset Semiconductors Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 Micro Commercial Components TRANS GP BJT NPN 60V 10A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 Microsemi NPN power silicon transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 Motorola 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 On Semiconductor General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 On Semiconductor Complementary Silicon Power Transistors - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 Semelab NPN power transistor, 100V, 15A - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 STMicroelectronics Complementary power transistors Original
2N3055 STMicroelectronics Complementary power transistors Original
2N3055 STMicroelectronics TRANS GP BJT NPN 60V 15A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 Transys Electronics SILICON PLANAR POWER TRANSISTORS Original
2N3055 USHA High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 USHA NPN silicon power transistor. 15 Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original
2N3055 Various Russian Datasheets Transistor Original
2N3055 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N3055 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan
2N3055 API Electronics Short form transistor data Scan
2N3055 API Electronics Short form transistor data Scan
Showing first 20 results.

2N3055

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N3055 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N3055 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3055 at our online store! 2N3055 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3055 Information Did you Know , Request a Quote Test Houses 2N3055 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V American Microsemiconductor
Original
2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit t 2N3055 transistors 2n3055 STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , . operating junction temperature For PNP type voltage and current values are negative 2N3055 MJ2955 2 STMicroelectronics
Original
2n3055 malaysia 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955
Abstract: applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 us, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 us 250 us 2N3055, MJ2955 50 us dc 1 ms There are two limitations on the power handling ON Semiconductor
Original
2N3055 power amplifier circuit 2N3055 MEXICO 2n3055 application 2N3055 typical applications 2N3055 JAPAN pin out TRANSISTOR 2n3055 204AA 2N3055/D
Abstract: (A) Fig. 1 - Power dissipation vs. temperature derating curve fo r 2N3055. Fig . 2 - Typical dc-beta characteristics (o r 2N3055. DE | 3 A 7 S D Û l ' D D 1 7 3 5 4 b 3875081 G E , Typical c o lle cto r-to -e m itte r saturation voltage characteristics to r type 2N3055. Fig. 4 - Typical base-to-em itter saturation voltage as a fun ctio n o f co lle cto r current fo r type 2N3055. , transfer characteristics fo r 2N3055. 358 -
OCR Scan
RCA-2N3055 KCS-27516 rca 2n3055 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator RCA 2N3055 transistor TQ-204AA/TO-3
Abstract: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , ct u od r P e let o bs O Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER STMicroelectronics
Original
ID4079
Abstract: 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , 50 75 100 125 150 200 100 Units / Tray 2N3055G TOâ'204AA (Pbâ'Free) 100 , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , . (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on ON Semiconductor
Original
2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 application note 2n3055 circuit diagram
Abstract: 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 , 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 2N5876 BDW51B 2N3055 BDW51B BDW51B BDW51B BDW51B 2N5336 2N5336 2N5336 2N3439 , 2N3792 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 BDW52C BDW51C 2N3055 BDW51C BDW51C BDW51C BDW51C 2N5338 2N5338 2N5338 -
Original
BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3016 2N3021 2N3185 2N3186 2N3195 2N3196
Abstract: reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , ) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 2N3055H MJ2955 100 Units / Tray 100 , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055 ON Semiconductor
Original
DC variable power with 2n3055 power transistor 2n3055 2N3055 transistor 2n3055 amplifier MJ2955 TRANSISTOR data transistor 2n3055
Abstract: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 us, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES Motorola
Original
2N3055 MOTOROLA MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055/MJ2955 2n3055-1
Abstract: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 Package Packaging MJ2955 TO-3 tray 1/7 . 7 2N3055 MJ2955 Absolute maximun rating 1 , 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER , values are negative 2N3055 MJ2955 2 Electrical characteristics Electrical characteristics -
Original
JESD97 0015923C hfe 2n3055 2n3055 audio amplifier mj2955 TO-3 2n3055 25 2n3055 pnp general purpose 2n3055 transistors
Abstract: general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 us, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 us 250 us 2N3055, MJ2955 ON Semiconductor
Original
2n3055 equal MJ2955 mexico Application Notes 2n3055 Amplifier value of 2n3055
Abstract: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , types voltage and current values are negative. 2/4 1 3 V V 1.8 V 70 2N3055 STMicroelectronics
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pnp transistor 2N3055 complementary npn-pnp complementary npn-pnp power transistors Mj2955 power transistor P003F
Abstract: .J t COLLECTOR CURRENT lc (A) Fig. 1 - Power dissipation vs. temperature derating curve lor 2N3055. Fig. 2 - Typical dc-bela characteristics lor 2N3055. Ol DE |3fl7SDûÃ" 0D17354 b J" 0 1E 17354 D , tunctlon ol collector current lor type 2N3055. 3875081 G E SOLID STATE General-Purpose Power Transistors , saturation voltage characteristics lor type 2N3055. COMMON EMITTER TC»25°C i 2 y 1 5 I 1 0 , characteristics tor 2N3055. 358 -
OCR Scan
SN3055 2N3055 RCA 2n3055 collector characteristic curve TRANSISTOR 2n3055 rca2n3055 92CS-27516
Abstract: 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 , nearest preferred 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98A BDW52C , BDW51C 2N3055 BDW51C BDW51C BDW51C BUX10 2N5339 2N5339 2N5339 2N3439 2N3440 BDW51C BDW51C , BDW51C BDW51C BD238 BD238 BD238 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055 2N5038 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BFX34 STMicroelectronics
Original
BUL128 DK53 dk52 2SC4977 MJE102 2SA1046 BU808DFI equivalent 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235
Abstract: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 ON Semiconductor
Original
2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet 2N3055 transistor equivalent 22N3055
Abstract: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V , 2N3055, MJ2955 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless STMicroelectronics
Original
Abstract: . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO-204AA (Pb-Free) 1 Units / Tubes 140 2N3055H TO-204AA 100 Units / Tray 120 MJ2955 TO , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC ON Semiconductor
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OF transistor 2n3055 to-3 package
Abstract: may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , Industries, LLC, 2005 1 May 5, 2005 - Rev. 5 Publication Order Number: 2N3055/D 2N3055(NPN , ) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055
Abstract: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , 300us, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055, MJ2955 , imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) NPN 2N3055 PNP MJ2955 DC Multicomp
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2n3055 IC npn 2n3055 2n3055 pin
Abstract: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 us, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES Motorola
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2N3055-D
Abstract: 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 , 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 2N5876 BDW51B 2N3055 BDW51B BDW51B BDW51B BDW51B 2N5336 2N5336 2N5336 2N3439 , 2N3792 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 BDW52C BDW51C 2N3055 BDW51C BDW51C BDW51C BDW51C 2N5338 2N5338 2N5338 -
OCR Scan
3055 transistor 3055 3055 transistor 2N 3055 TRANSISTOR BDX 285 TRANSISTOR BDX 286 CB-19
Abstract: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , . operating junction temperature For PNP type voltage and current values are negative 2N3055 MJ2955 2 -
OCR Scan
power transistor 3055 n3055 3055 npn e 3055 t transistor C200 L 3055 62702-U Q62901-B
Abstract: 2N3055 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N3055 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3055 at our online store! 2N3055 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3055 Information Did you Know , Request a Quote Test Houses 2N3055 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V -
OCR Scan
T0-220 TC-220
Abstract: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055/D 2N3055, MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ STMicroelectronics
Original
BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD292 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420
Abstract: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , 300us, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055, MJ2955 , imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) NPN 2N3055 PNP MJ2955 DC -
OCR Scan
B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 BUX37 THOMSON 2N3421 2N3445 2N3446 2N3447 2N3448 2N3667
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