2N3055 datasheet and Application Note, Data Sheet, Circuit, PDF, Pinout

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2N3055 Datasheet, Circuit, PDF, & Application Note Results

Datasheet Search Results			1 - 50 of about 108 for 2N3055
	2N3055	Advanced Semiconductor, Inc.	Silicon Transistor Selection Guide	384.14 Kb, 5 Pages.	Buy Now!

	2N3055	Boca Semiconductor	COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	172.37 Kb, 3 Pages.	Buy Now!

	2N3055	Central Semiconductor	General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	59.54 Kb, 1 Pages.	Buy Now!

	2N3055	Comset Semiconductors	Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	133.99 Kb, 2 Pages.	Buy Now!

	2N3055	Continental Device India Limited	Semiconductor Device Data Book 1996	100.34 Kb, 1 Pages.	Buy Now!

	2N3055	Continental Device India Limited	TO-3 Power Package Transistors	235.94 Kb, 3 Pages.	Buy Now!

	2N3055	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	42.57 Kb, 1 Pages.	Buy Now!

	2N3055	Ferranti Semiconductors	Shortform Data Book 1971	103.64 Kb, 2 Pages.	Buy Now!

	2N3055	Ferranti Semiconductors	Quick Reference Guide 1985	21.77 Kb, 1 Pages.	Buy Now!

	2N3055	Ferranti Semiconductors	Power Transistors 1977	21.92 Kb, 1 Pages.	Buy Now!

	2N3055	General Electric	Power Transistor Data Book 1985	116.58 Kb, 3 Pages.	Buy Now!

	2N3055	General Electric Solid State	General purpose power transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	88.67 Kb, 3 Pages.	Buy Now!

	2N3055	Infineon Technologies	TRANS GP BJT NPN 60V 15A TO 3	84.27 Kb, 4 Pages.	Buy Now!

	2N3055	Iskra Ltd	Power Silicon Transistors / Switching Transistors	133.79 Kb, 1 Pages.	Buy Now!

	2N3055	Lucas Semiconductors	Semiconductor Products	47.97 Kb, 1 Pages.	Buy Now!

	2N3055	Micro Commercial Components	TRANS GP BJT NPN 60V 10A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	82.67 Kb, 1 Pages.	Buy Now!

	2N3055	Micro Electronics	Semiconductor Devices	62.95 Kb, 1 Pages.	Buy Now!

	2N3055	Microsemi Corporation	NPN power silicon transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	52.98 Kb, 2 Pages.	Buy Now!

	2N3055	Mospec Semiconductor	POWER TRANSISTORS(15A,50V,115W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	167.66 Kb, 3 Pages.	Buy Now!

	2N3055	Mospec Semiconductor	Complementary Silicon Power Transistor	167.66 Kb, 3 Pages.	Buy Now!

	2N3055	Motorola	European Master Selection Guide 1986	54.71 Kb, 1 Pages.	Buy Now!

	2N3055	Motorola / Freescale Semiconductor	15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	130.18 Kb, 4 Pages.	Buy Now!

	2N3055	Mullard	Quick Reference Guide 1977/78	437.81 Kb, 16 Pages.	Buy Now!

	2N3055	N/A	Semiconductor Reference and Application Handbook 1978	92.44 Kb, 1 Pages.	Buy Now!

	2N3055	Newmarket Transistors Ltd (NKT)	Product Portfolio 1972/73	35.89 Kb, 1 Pages.	Buy Now!

	2N3055	On Semiconductor	Complementary Silicon Power Transistors - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	99.49 Kb, 8 Pages.	Buy Now!

	2N3055	On Semiconductor	General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	81.03 Kb, 4 Pages.	Buy Now!

	2N3055	RCA Solid State	Power Transistor Directory 1976	262.93 Kb, 6 Pages.	Buy Now!

	2N3055	RCA Solid State	Product Guide 1979	73.3 Kb, 1 Pages.	Buy Now!

	2N3055	Semelab	Bipolar Transistors (CECC and High Rel) & High Energy	179.25 Kb, 2 Pages.	Buy Now!

	2N3055	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	10.72 Kb, 1 Pages.	Buy Now!

	2N3055	Semelab	NPN power transistor, 100V, 15A - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	10.74 Kb, 1 Pages.	Buy Now!

	2N3055	Semiconductors, Inc.	Power Transistors	739.59 Kb, 8 Pages.	Buy Now!

	2N3055	Semitronics Corp.	Silicon Power Transistors	289.51 Kb, 4 Pages.	Buy Now!

	2N3055	SGS-Ates	Shortform Data Book 1977/78	26.56 Kb, 1 Pages.	Buy Now!

	2N3055	Siemens Semiconductors	NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	84.27 Kb, 4 Pages.	Buy Now!

	2N3055	Siemens Semiconductors	Semiconductor Data Book (German) 1976/77	169.75 Kb, 6 Pages.	Buy Now!

	2N3055	Siemens Semiconductors	Semiconductor Manual, Discrete Industrial Types 1974	174.19 Kb, 6 Pages.	Buy Now!

	2N3055	Silicon Transistor Corp.	JAN / Consumer / Military / Industrial / Automotive / Hi-Rel	244.72 Kb, 1 Pages.	Buy Now!

	2N3055	Solidev Semiconductors	Misc. Data Book Scans 1975/76	36.35 Kb, 1 Pages.	Buy Now!

	2N3055	Solidev Semiconductors	Solid State Products (Transistor Guide)	102.38 Kb, 2 Pages.	Buy Now!

	2N3055	ST Microelectronics	Shortform Data Book 1988	69.43 Kb, 1 Pages.	Buy Now!

	2N3055	ST Microelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	45.37 Kb, 4 Pages.	Buy Now!

	2N3055	ST Microelectronics	TRANS GP BJT NPN 60V 15A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	29.97 Kb, 4 Pages.	Buy Now!

	2N3055	ST Microelectronics	Complementary power transistors	75.58 Kb, 7 Pages.	Buy Now!

	2N3055	ST Microelectronics	Complementary power transistors	75.58 Kb, 7 Pages.	Buy Now!

	2N3055	Telefunken Electronic	Electronic Component Data Book 1976	54.15 Kb, 1 Pages.	Buy Now!

	2N3055	Telefunken Electronic	Power Transistors 1977/78	46.45 Kb, 3 Pages.	Buy Now!

	2N3055	Texas Instruments	The Power Semiconductor Data Book 1974	43.13 Kb, 2 Pages.	Buy Now!

	2N3055	Thomson-CSF	Power Transistor Data Book 1975	176.79 Kb, 8 Pages.	Buy Now!

	Datasheets per page: 50 \| 250 \| 500

Contextual Datasheet Results		1 - 50 of about 118 for 2N3055
	First line: Product Specification www.jmnic.com Silicon Power Transistors 2N3055 DESCRIPTION With TO-3 package Complement Abstract: .. Product Specification www.jm nic.com Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter .. datasheet abstract..	68.92 Kb	4 Pages

	First line: PROCESS CP235 Power Transistor Silicon Power Transistor Chip Central Semiconductor Corp. PROCESS Abstract: .. PRINCIPAL DEVICE TYPES 2N3055. GEOMETRY. PROCESS DETAILS. R1 20-March 2006 Process GLASS .. datasheet abstract..	28.78 Kb	2 Pages

	First line: SavantIC Semiconductor Product Specification Silicon Power Transistors 2N3055 DESCRIPTION TO-3 package type Abstract: .. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector .. datasheet abstract..	147.73 Kb	4 Pages

	First line: 2N3055 MJ2955 Complementary power transistors Features collector-emitter saturation voltage Complementary transistors Applications Abstract: .. 2N3055 MJ2955. Complementary power transistors. Features ■ Low collector-emitter saturation voltage. ■ Complementary NPN - PNP transistors. Applications ■ General purpose. ■ Audio Amplifier .. datasheet abstract..	75.55 Kb	7 Pages

	First line: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ STMicroelectronics PREFERRED. SALESTYPES ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar .. datasheet abstract..	29.97 Kb	4 Pages

	First line: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ STMicroelectronics PREFERRED. SALESTYPES ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION. The 2N3055 is a silicon Epitaxial-Base Planar .. datasheet abstract..	45.37 Kb	4 Pages

	First line: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ ST PREFERRED SALESTYPES. ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION. The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec .. datasheet abstract..	48.23 Kb	4 Pages

	First line: INCHANGE Semiconductor Product Specification Silicon Power Transistor DESCRIPTION Safe Operating Area Current Abstract: .. INCHANGE Semiconductor isc Product Specification. isc Silicon NPN Power Transistor 2N3055. DESCRIPTION. ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter .. datasheet abstract..	85.33 Kb	3 Pages

	First line: 2N3055 SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION 2N3055 silicon epitaxial-base transistor Jedec Abstract: .. DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity .. datasheet abstract..	38.89 Kb	4 Pages

	First line: 2N3055 MJ2955 Preferred Device Complementary Silicon Power Transistors designed general-purpose switching amplifier Abstract: .. 2N3055/D. 2N3055, MJ2955 Preferred Device. Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. ∞ DC Current Gain - h FE = 20 -70 @ I .. datasheet abstract..	81.03 Kb	4 Pages

	First line: 2N3055 SILICON TRANSISTORS 2N3055 silicon transistor TO-3 SILICON TRANSISTOR metal case. intended Abstract: .. UTC 2N3055 SILICON NPN TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-003,A. SILICON NPN TRANSISTORS. The UTC 2N3055 is a silicon NPN transistor in TO-3. metal case. It is intended for power .. datasheet abstract..	40.12 Kb	2 Pages

	First line: Transys Electronics SILICON PLANAR POWER TRANSISTORS 2N3055 MJ2955 TO-3 Metal Package General Abstract: .. SILICON PLANAR POWER TRANSISTORS 2N3055 NPN. MJ2955 PNP. TO-3. Metal Can Package. General Purpose Switching and Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS .. datasheet abstract..	143.83 Kb	3 Pages

	First line: 2N3055 MJ2955 Preferred Device Complementary Silicon Power Transistors designed general-purpose switching amplifier Abstract: .. 2N3055/D. 2N3055, MJ2955 Preferred Device. Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. ∞ DC Current Gain - h FE = 20 -70 @ I .. datasheet abstract..	79.83 Kb	4 Pages

	First line: 2N3055 NPN MJ2955 PNP Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors Abstract: .. 2N3055/D. 2N3055 NPN , MJ2955 PNP Preferred Device. Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general purpose switching and amplifier .. datasheet abstract..	67.25 Kb	4 Pages

	First line: 2N3055 POWER LINEAR SWITCHING APPLICATIONS 2N3055 silicon epitaxial-base transistor JEDEC TO-3 metal Abstract: .. COMSET SEMICONDUCTORS 1/2. 2N3055. The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output .. datasheet abstract..	133.98 Kb	2 Pages

	First line: HIGH POWER TRANSISTOR 2N3055 115W Technical Data ..designed general-purpose switching amplifier application. Abstract: .. HIGH POWER TRANSISTOR NPN 2N3055 15A 115W Technical Data. ..designed for general-purpose switching and amplifier application. DC Current Gain - h FE = 20 ‐ 70 @ IC = 4Adc Collector-Emitter Saturation .. datasheet abstract..	47.16 Kb	2 Pages

	First line: 2N3055 / 7 Dimensions inches . Bipolar Device Hermetically sealed Metal Package. max. Bipolar Device. Abstract: .. 2N3055/7. Bipolar NPN Device. VCEO = 100V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. datasheet abstract..	10.73 Kb	1 Pages

	First line: 2N3055 / 6 Dimensions inches . Bipolar Device Hermetically sealed Metal Package. max. Bipolar Device. Abstract: .. 2N3055/6. Bipolar NPN Device. VCEO = 100V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. datasheet abstract..	10.74 Kb	1 Pages

	First line: 2N3055 / 5 Dimensions inches . Bipolar Device Hermetically sealed Metal Package. max. Bipolar Device. Abstract: .. 2N3055/5. Bipolar NPN Device. VCEO = 30V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. datasheet abstract..	10.73 Kb	1 Pages

	First line: 2N3055 Dimensions inches . Bipolar Device Hermetically sealed Metal Package. max. Bipolar Device. Abstract: .. 2N3055. Bipolar NPN Device. VCEO = 60V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. datasheet abstract..	10.73 Kb	1 Pages

	First line: TRANSISTOR SPECIFICATIONS TYPICAL TABLE FROM CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 Abstract: .. 2N3055 NPN TO3 15000 60 20 min. 115W High Power Amp £1.26 £0.96 £0.78. BC178 PNP TO18 100 25 125-500 300 General Purpose £0.28 £0.23 £0.17. BC559 PNP TO92 100 30 240 500 Low noise amplifier £0.10 £0.05 .. datasheet abstract..	3.85 Kb	1 Pages

	First line: BIPOLAR TRANSISTOR INTRODUCTION BIPOLAR CROSS REFERENCE order improve overall service SGS-THOMSON introduced Abstract: .. 2N3055 2N3055 2N3055. 2N3076 BUV23 BUV23. 2N3171 2N3792 2N3792. 2N3172 2N3792 2N3792. 2N3173 2N3792 2N3792. 2N3174 TIP2955 TIP2955. 2N3183 2N3792 2N3792. 2N3184 2N3792 2N3792. 2N3185 2N3792 2N3792 .. datasheet abstract..	273.9 Kb	38 Pages

	First line: TECHNICAL DATA POWER SILICON TRANSISTOR Qualified MIL-PRF-19500 / 407 Devices 2N3055 Qualified Level JANTX Abstract: .. 2N3055 JAN SERIES. ELECTRICAL CHARACTERISTICS con’t Characteristics Symbol Min. Max. Unit. ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 4.0 Vdc IC = 4.0 Adc, VCE = 4.0 .. datasheet abstract..	52.97 Kb	2 Pages

	First line: TECHNICAL DATA 2N3055 Processed MIL-PRF-19500 / 407 MIL-PRF DEVICES SILICON POWER TRANSISTOR MAXIMUM RATINGS Abstract: .. 2N3055 JAN, JTX. Processed per MIL-PRF-19500/407. NPN SILICON POWER TRANSISTOR. TO-3 TO-204AA MIL-PRF. QPL. DEVICES. 6 Lake Street, Lawrence, MA 01841 3/98 REV: B. 1-800-446-1158 / 978 794-1666 .. datasheet abstract..	28.68 Kb	2 Pages

	First line: Transmitter BiasComms From good folks BiasComms heres watt transmitter that they Abstract: .. "The 2N3055 and the 2SK135 should both be heatsunk -- the FET has a source to case connection, so can be bolted straight down, but the 2N3055 must be insulated with the usual mica washer, and plastic .. datasheet abstract..	37.14 Kb	2 Pages

	First line: omponents Marilla Street Chatsworth 2N3055 Features Designed general-purpose switching amplifier applications With Abstract: .. 2N3055. 10 Amp NPN Silicon Power Transistors 80 W. Features • Designed for general-purpose switching and amplifier applications • With TO-3 package. Maximum Ratings Symbol Rating Rating Unit. V .. datasheet abstract..	82.69 Kb	1 Pages

	First line: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 Abstract: .. 2N3055 2N3055 2N3076 BUX98A 2N3171 BDW52C 2N3172 BDW52C 2N3173 BDW52C 2N3174 TIP2955 .. 2N6371 2N3055 2N6383 MJ3001 2N6384 BDX87C 2N6385 MJ3001 2N6386 2N6388 .. datasheet abstract..	217.38 Kb	47 Pages

	First line: Bipolar Transistors Cross Reference INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED INDUSTY STANDARD REPLACEMENT Abstract: .. 2N3055 2N3055 2N3076 BUX98 2N3171 BDW52C 2N3172 BDW52C 2N3173 BDW52C 2N3174 TIP2955 .. 2N5037 2N3055 2N5038 2N5038 2N5039 2N5038 2N5068 BDW51C 2N5069 BDW51C 2N5083 2N5339 .. datasheet abstract..	160.72 Kb	35 Pages

	First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N3055 / D Complementary Silicon Power Transistors Abstract: .. Order this document by 2N3055/D. Ω Motorola, Inc. 1995. CASE 1‐07 TO‐204AA TO‐3 Motorola Preferred Device. 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON. 60 VOLTS 115 WATTS. 2 Motorola Bipolar .. datasheet abstract..*	130.18 Kb	4 Pages

	First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N3055 / D Complementary Silicon Power Transistors Abstract: .. Order this document by 2N3055/D. Ω Motorola, Inc. 1995. CASE 1‐07 TO‐204AA TO‐3 Motorola Preferred Device. 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON. 60 VOLTS 115 WATTS. 2 Motorola Bipolar .. datasheet abstract..*	134.7 Kb	4 Pages

	First line: INCHANGE Semiconductor Product Specification Silicon Power Transistors DESCRIPTION Safe Operating Area Current Abstract: .. : VCE sat = -1.1V Max @ IC= -4A ·Complement to Type 2N3055. APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Ta=25°C SYMBOL PARAMETER .. datasheet abstract..	86.28 Kb	3 Pages

	First line: COMPONENTS LTD. 2N3055 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS EPITAXIAL PLANAR TRANSISTOR Description Designed Abstract: .. 2N3055. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF NPN .. datasheet abstract..	227.87 Kb	1 Pages

	First line: HIGH POWER TRANSISTOR MJ2955 115W Technical Data ..designed general-purpose switching amplifier application. Abstract: .. 2N3055 • 1 Pulse Test : Pulse Width <300μs , Duty Cycle < 2.0% .. datasheet abstract..	47.11 Kb	2 Pages

	First line: Silicon Power Transistor 2N3055 Technical Data Typical Applications These devices designed general Abstract: .. Silicon Power Transistor 2N3055 Technical Data. Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : Complementary .. datasheet abstract..	47.81 Kb	3 Pages

	First line: Power Transistors TO-3 Case TYPE BVCBO BVCEO --60 --60 --100 VCE SAT MHz Abstract: .. 2N3055 MJ2955 15 115 100 60 5.0 - - 10 3.0 10 2.5. 2N3442 10 117 160 140 20 70 3.0 5.0 10 - -. 2N3713 2N3789 10 150 80 60 15 - - 3.0 1.0 5.0 4.0. 2N3714 2N3790 10 150 100 80 15 - - 3.0 1.0 5.0 4.0. 2N3715 2N3791 10 150 80 .. datasheet abstract..	31.92 Kb	1 Pages

	First line: MC1723C / D MC1723C Voltage Regulator MC1723C positive negative voltage regulator Abstract: .. 2N3055 or Equiv. 100pF. RSC. Ω Motorola, Inc. 1996 Rev 5. MC1723C. 2 MOTOROLA ANALOG IC DEVICE DATA .. V2 = 14V 2N3055. or Equiv. Vout = ‐15 V. 10 μF. 12k. 10k. ‐ + Vref. ‐ + + ‐ MC1723C. RSC. VO. MC1723C. 6 MOTOROLA .. datasheet abstract..	178.86 Kb	8 Pages

	First line: MC1723C / D MC1723C Voltage Regulator MC1723C positive negative voltage regulator Abstract: .. 2N3055 or Equiv. 100pF. RSC. Ω Motorola, Inc. 1996 Rev 5. MC1723C. 2 MOTOROLA ANALOG IC DEVICE DATA .. V2 = 14V 2N3055. or Equiv. Vout = ‐15 V. 10 μF. 12k. 10k. ‐ + Vref. ‐ + + ‐ MC1723C. RSC. VO. MC1723C. 6 MOTOROLA .. datasheet abstract..	181.07 Kb	8 Pages

	First line: AN932 APPLICATION NOTE L4955 FAMILY APPLICATION GUIDE Domenico Arrigo L4955 ULDO Ultra Abstract: .. The L4955 drives the base of a npn transistor 2N3055 . This configuration can deliver up to 10A . This application holds the L4955 functions of cur- rent limiting, inhibit and power good. The .. datasheet abstract..	159.17 Kb	20 Pages

	First line: AN932 APPLICATION NOTE L4955 FAMILY APPLICATION GUIDE Domenico Arrigo L4955 ULDO Ultra Abstract: .. The L4955 drives the base of a npn transistor 2N3055 . This configuration can deliver up to 10A . To fix these concepts let us consider two examples: Example1. Electrical spec. Vout = 5V and Iout .. datasheet abstract..	254.71 Kb	24 Pages

	First line: Semiconductort Complementary Silicon Power Transistors designed generalpurpose switching amplifier applications. TIP3055 TIP2955 Abstract: .. NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. IC, COLLECTOR CURRENT AMPS 10. 5.0. 0.1. 0.3. 2.0 3.0. Figure 2. Maximum Rated Forward Bias Safe Operating .. datasheet abstract..	43.28 Kb	4 Pages

	First line: Semiconductort Complementary Silicon Power Transistors designed generalpurpose switching amplifier applications. TIP3055 TIP2955 Abstract: .. NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. IC, COLLECTOR CURRENT AMPS 10. 5.0. 0.1. 0.3. 2.0 3.0. Figure 2. Maximum Rated Forward Bias Safe Operating .. datasheet abstract..	44.05 Kb	4 Pages

	First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document TIP3055 / D Complementary Silicon Power Transistors Abstract: .. NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. IC, COLLECTOR CURRENT AMPS 10. 5.0. 0.1. 0.3. 2.0 3.0. Figure 2. Maximum Rated Forward Bias Safe Operating .. datasheet abstract..	100.8 Kb	4 Pages

	First line: Current Gain CollectorEmitter Saturation Voltage VCE sat Max Excellent Safe Operating Area designed Abstract: .. NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. IC, COLLECTOR CURRENT AMPS 10. 5.0. 0.1. 0.3. 2.0 3.0. Figure 2. Maximum Rated Forward Bias Safe Operating .. datasheet abstract..	103.52 Kb	4 Pages

	First line: Drucker Dual folgenden dieser Klasse sind konstruktiv sehr bauen CV80 CV40. Abstract: .. Der erste Blick fällt natürlich auf den 2N3055, Datenblatt 2N3055 von Motorola, dessen PNP+Komplementärtyp MJ2955 heißt. . Drucker, Geräte von Dual, Röhrenradios http://www .. datasheet abstract..	1009.32 Kb	10 Pages

	First line: LM125 Precision Dual Tracking Regulator LM125 Precision Dual Tracking Regulator INTRODUCTION LM125 Abstract: .. The 2N3055 pass device is low in cost and maintains a rea-sonably high beta at collector currents up to several amps. The devices 2N3055 may be of either planar or alloy junction construction. .. datasheet abstract..	584.35 Kb	18 Pages

	First line: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO 2SD401 2SD401A 2SD402 2SD402A 2SD403 Abstract: .. JEDEC 2N3055. 2SD493 60 5 5A. 75W. Tc=25oC 60 40 2 2.5A. JEDEC 2N5977 2SB579. 2SD494 80 5 5A. 75W. Tc .. datasheet abstract..	90.32 Kb	4 Pages

	First line: Given recent trends semiconductor industry continuous market cycles product availability ensure world Abstract: .. TIP35C IRF540 2N3055 BAR43. 1.5KE3ARL SMAJ10A. ST62TXX 27C256 27512 93C46. Standard Products. W h a t i s y o u r r i s k w i t h. What is a Standard Product. In-house Manufacturing. L o w C o s t o f O w n e r s h i p. Low Lead .. datasheet abstract..	706.59 Kb	7 Pages

	First line: Stage Bi-Directional Sequencer bi-directional sequencer uses binary up / down counter CD4516 line Abstract: .. to the decoder output and supplies about 80 mA of current to the base of the 2N3055 NPN power t ransistor which then supplies 2 or more amps to the 12 volt lamp. The voltage across the PNP transistor .. datasheet abstract..	112.16 Kb	18 Pages

	First line: Stage Bi-Directional Sequencer bi-directional sequencer uses binary up / down counter CD4516 line decoders Abstract: .. the decoder output and supplies about 80 mA of current to the base of the 2N3055 NPN power transis tor which then supplies 2 or more amps to the 12 volt lamp. The voltage across the PNP transistor will .. datasheet abstract..	113.31 Kb	18 Pages

	First line: TIP3055 NPN TIP2955 PNP Complementary Silicon Power Transistors Designed general-purpose switching amplifier Abstract: .. NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. TIP3055 NPN , TIP2955 PNP http://onsemi.com 3. TIP3055 TIP2955. Figure 1. DC Current Gain. IC, COLLECTOR .. datasheet abstract..	57.96 Kb	4 Pages

	Datasheets per page: 50 \| 250 \| 500

Specsheet Results
	2N3055	N/A	High Power, High Voltage, General Purpose	Specification

	2N3055-1	N/A	Power, General Purpose	Specification

	2N3055-10	N/A	Power, General Purpose	Specification

	2N3055-2	N/A	Power, General Purpose	Specification

	2N3055-3	N/A	Power, General Purpose	Specification

	2N3055-4	N/A	Power, General Purpose	Specification

	2N3055/5	N/A	Si NPN Power BJT - Pol=NPN / Pkg=TO3 / Vceo=30 / Ic=15 / Hfe=14min / fT(Hz)=0.8M / Pwr(W)=115	Specification

	2N3055-5	N/A	Power, General Purpose	Specification

	2N3055/6	N/A	Si NPN Power BJT - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=15 / Hfe=15-70 / fT(Hz)=0.8M / Pwr(W)=115	Specification

	2N3055-6	N/A	Power, General Purpose	Specification

	2N3055/7	N/A	Si NPN Power BJT - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=15 / Hfe=15-70 / fT(Hz)=0.8M / Pwr(W)=115	Specification

	2N3055-7	N/A	Power, General Purpose	Specification

	2N3055-8	N/A	Power, General Purpose	Specification

	2N3055-9	N/A	Power, General Purpose	Specification

	2N3055A	N/A	Silicon NPN	Specification

	2N3055A	N/A	Power, General Purpose	Specification

	2N3055C	N/A	Si NPN Power BJT	Specification

	2N3055C,V	N/A	Silicon NPN	Specification

	2N3055E	N/A	Power, General Purpose	Specification

	2N3055(E,H,S,U,)	N/A	Silicon NPN	Specification

Cross References
	2N3055	Cross References (407)

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