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2N3055/MJ2955

Catalog Datasheet MFG & Type PDF Document Tags

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , . operating junction temperature For PNP type voltage and current values are negative 2N3055 MJ2955 2 , type voltage and current values are negative 3/7 Package mechanical data 3 2N3055 MJ2955
STMicroelectronics
Original
2n3055 malaysia 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955

2n3055

Abstract: mj2955 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER , e let o bs O 2/7 DocID4079 Rev 8 Value Unit 1.5 °C/W 2N3055, MJ2955
STMicroelectronics
Original
ID4079

2N3055 power amplifier circuit

Abstract: 2n3055 applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handling , Region Safe Operating Area http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC
ON Semiconductor
Original
2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2n3055 circuit 2N3055 typical applications mj2955 transistor 204AA 2N3055/D

2N3055

Abstract: hfe 2n3055 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 Package Packaging MJ2955 TO-3 tray 1/7 . 7 2N3055 MJ2955 Absolute maximun rating 1 , 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER , values are negative 2N3055 MJ2955 2 Electrical characteristics Electrical characteristics
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JESD97 0015923C hfe 2n3055 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier 2n3055 25 2n3055 pnp

2n3055 malaysia

Abstract: Mj2955 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V , 2N3055, MJ2955 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless
STMicroelectronics
Original

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , : Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055, MJ2955 , http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20
ON Semiconductor
Original
2N3055 power circuit 2n3055 equal 2N3055 JAPAN DC variable power with 2n3055 MJ2955 mexico 2N3055-1

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , 2N3055 / MJ2955 Information furnished is believed to be accurate and reliable. However
STMicroelectronics
Original
pnp transistor 2N3055 2N3055 series voltage regulator 2n3055 circuit diagram 2n3055 voltage regulator complementary npn-pnp complementary npn-pnp power transistors P003F

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case , V 70 V 1 3 V V 1.5 V 70 2N3055 / MJ2955 TO-3 MECHANICAL DATA mm DIM , N B V E G U D R P003F 3/4 2N3055 / MJ2955 Information furnished is
STMicroelectronics
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2N3055 specification Mj2955 power transistor 2N3055/MJ2955 J 2N3055 t 2N3055 value of 2n3055

mj2955

Abstract: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS â  STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar , are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA Rthj-case Therm al R , V 1 b 20 70 5 3 MHz 2.87 A 2N3055 / MJ2955 TO-3 MECHANICAL DATA mm , MJ2955. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM C
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OCR Scan
SC08820 SC08830

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055, MJ2955 , imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) NPN 2N3055 PNP MJ2955 DC , ) IB, Base Current (mA) Page 3 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors
Multicomp
Original
MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2n3055 collector characteristic curve transistor 2N3055

2N3055

Abstract: MJ2955 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , 1.5 % For PNP types voltage and current values are negative. 2/4 70 2N3055 / MJ2955 TO , 1.193 A P C O N B V E G U D R P003F 3/4 2N3055 / MJ2955
STMicroelectronics
Original
Transistor MJ2955 data transistor 2n3055 internal schematic diagram for 2n3055

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 200 300
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram 2n3055 application note 2N3055 power amplifier circuit diagram 2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055
Motorola
Original
2N3055 MOTOROLA 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 power transistor 2n3055 2n3055 datasheet 2N3055 TO-3

2N3055

Abstract: 2n3055 motorola Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose
Motorola
Original
2N3055-D

2N3055

Abstract: DC variable power with 2n3055 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , /D 2N3055, MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , Area http://onsemi.com 36 2N3055, MJ2955 500 300 200 hFE , DC CURRENT GAIN 25°C 100 70 50 30 , Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE
ON Semiconductor
Original
2N3055 transistor mj2955 safe operating area OF transistor 2n3055 to-3 package 2n3055 safe operating area

2n3055 motorola

Abstract: L 3055 motorola id th < 300 ills , D uty C y c le < 2.0% . 2N3055, MJ2955 There are two limitations on the , 2N3055 MJ2955 NPN PNP hF E , D C CURRENT GAIN 1C , COLLECTOR CURRENT (AMP) 1C, COLLECTOR , 2N3055 MJ2955 PACKAGE DIMENSIONS NOTES; 1. DIMENSIONING AND TOLERANCING PER ANSI t l = f c l U-D , recommended choices tor future use and best overall value. © Motorola, Inc. 1995 (M) MOTOROLA 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C u n le ss o th e rw is e noted) Characteristic *OFF
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L 3055 motorola motorola 2n3055 motorola power transistor 2N3055 J2955

2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , 120 - fhfe 10 - kHz 2N3055, MJ2955 There are two limitations on the power , Operating Area 2 Motorola Bipolar Power Transistor Device Data 2N3055 MJ2955 NPN PNP MJ2955 , ) Figure 5. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Com plem entary
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OCR Scan

pin configuration transistor 2n3055

Abstract: 2N3055 MJ2955 IL 2N3055 MJ2955 NPN POWER TRANSISTOR PNP POWER TRANSISTOR 2N3055 MJ2955 General Purpose Switching and Amplifier Applications DIM A B C D E F G H J K L M MIN - MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 6.35 0,96 29,90 10,69 5.20 16,64 11,15 - PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR 3.84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open , voltage (R be = 100Q) VcBO v CEO VCER max. max. max. 100 V 60 V 70 V 5-1 2N3055 MJ2955
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OCR Scan
pin configuration transistor 2n3055 pin configuration 2N3055 transistor pin configuration transistor mj2955

2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC , Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 200 300 , , MJ2955 (PNP) http://onsemi.com 3 10 2N3055, MJ2955 PACKAGE DIMENSIONS TO-204 (TO-3) CASE , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055
ON Semiconductor
Original
2N30

2n3055

Abstract: 2N3055 curve mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , = |hfe| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E * -Bcndng VWre Limit , (VOLTS) http://www.bocasemi.com 2N3055 NPN / MJ2955 PIMP NPN 2N3055 DC CURRENT GAIN PNP MJ2955 DC , ://www.bocasemi.com 2N3055 NPN / MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted
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OCR Scan
npn 2n3055

J2955

Abstract: 2n3055 motorola Vdc VBE(on) _ Adc - fhfe - kHz 2N3055, MJ2955 20 *· % ST 10 -1
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OCR Scan
transistor 2N 3055 2n 3055 Motorola 3055 adc 305-5 2n 3055 transistor transistor 3055 pnp
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