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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

2N3055 equivalent transistor NUMBER

Catalog Datasheet MFG & Type PDF Document Tags

MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , for future use and best overall value. REV 1 Motorola Bipolar Power Transistor Device Data , ) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. 3­530 Motorola Bipolar Power Transistor Device , Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­531 MJ16110 MJW16110 , Bipolar Power Transistor Device Data MJ16110 MJW16110 Table 1. Inductive Load Switching Drive Circuit
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MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent MJ15025* equivalent MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011

bd139 equivalent transistor

Abstract: transistor 2SA1046 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Switchmode Bridge Series , (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , " design. REV 1 3­696 Motorola Bipolar Power Transistor Device Data , 300 µs, Duty Cycle 2.0%. Motorola Bipolar Power Transistor Device Data 3­697 MJE16106 , VOLTAGE (VOLTS) Figure 5. Capacitance 3­698 Motorola Bipolar Power Transistor Device Data
Motorola
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bd139 equivalent transistor transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE MJ15016 BU208A MJ16012 MJ10009 TIP101 TIP102

MJ3001 equivalent

Abstract: Motorola transistors MJE3055 TO 127 for future use and best overall value. REV 3 Motorola Bipolar Power Transistor Device Data , Cycle 2%. 3­848 Motorola Bipolar Power Transistor Device Data MJW16010A TYPICAL STATIC , °C Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­849 MJW16010A TYPICAL , Figure 11. Crossover Time Motorola Bipolar Power Transistor Device Data MJW16010A Table 1. Inductive , MTP12N10 500 µF 150 Voff *Tektronix AM503 *P6302 or Equivalent Scope - Tektronix 7403 or Equivalent T1
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MJ3001 equivalent Motorola transistors MJE3055 TO 127 BD907 equivalent Drive IC 2SC3346 mje340 equivalent transistor equivalent book 2sc2238 TIP106 TIP107 TIP31C TIP32C TIP120 TIP121

2N3055 equivalent transistor NUMBER

Abstract: bd139 equivalent transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320 NPN Silicon Power Transistor Switchmode Series This transistor is designed for high­voltage, power switching in inductive circuits where RBSOA and , Saturation Voltages Leakage Currents MAXIMUM RATINGS Designer's TM Data Sheet POWER TRANSISTOR 2 , are given to facilitate "worst case" design. 3­620 Motorola Bipolar Power Transistor Device Data , Transistor Device Data 3­621 MJE1320 TYPICAL STATIC CHARACTERISTICS VCE , COLLECTOR­EMITTER VOLTAGE
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MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent BU108 bd139 3v 220AB TIP122 TIP125 TIP126 TIP127 TIP73B

bd139 equivalent transistor

Abstract: BU108 Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Width = 300 µs, Duty Cycle 2.0% Motorola Bipolar Power Transistor Device Data 3­513 , 2.0% 3­514 Motorola Bipolar Power Transistor Device Data MJ16010 MJW16010 MJ16012 MJW16012 , Bipolar Power Transistor Device Data 3­515 MJ16010 MJW16010 MJ16012 MJW16012 5000 3000 2000 t sv , = C IB1 Figure 12. Crossover Time 3­516 Motorola Bipolar Power Transistor Device Data
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BD139 fall time 2sd358 equivalent 2SA794 equivalent BU326 MJL21193 equivalent MJE172 equivalent TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B

2SD418

Abstract: TIP33C equivalent Transistor The MJ10000 Darlington transistor is designed for high­voltage, high­speed, power switching in , "worst case" design. REV 4 Motorola Bipolar Power Transistor Device Data 3­433 , Transistor Device Data MJ10000 DC CHARACTERISTICS VCE , COLLECTOR­EMITTER VOLTAGE (VOLTS) 500 300 200 , Bipolar Power Transistor Device Data 3­435 MJ10000 Table 1. Test Conditions for Dynamic , EQUIVALENT Vclamp RS = 0.1 PW Varied to Attain IC = 250 mA CIRCUIT VALUES Lcoil = 10 mH, VCC = 10 V
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2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a 204AA TIP75C 2N6488 2N6490 2N6491 MJE13005

MJ3001 equivalent

Abstract: bd139 equivalent Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high­voltage , for future use and best overall value. REV 2 Motorola Bipolar Power Transistor Device Data , 300 µs, Duty Cycle 2%. v 3­440 Motorola Bipolar Power Transistor Device Data MJ10005 , Transistor Device Data 3­441 MJ10005 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCEX , CONDITIONS 2 Rcoil Lcoil VCC RESISTIVE SWITCHING INPUT CONDITIONS 0 1N4937 OR EQUIVALENT Vclamp
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BDT65C equivalent 2sc1061 equivalent 2n3055 motor control circuits D45H11 equivalent replacement darlington tip31 BDX54 TIPL752 TIPL752A TIPL753 TIPL753A TIPL755 TIPL755A

2sc1173 equivalent Silicon NPN Power Transistors

Abstract: bd139 equivalent 10%. REV 1 Motorola Bipolar Power Transistor Device Data 3­461 , Bipolar Power Transistor Device Data MJ10015 MJ10016 TYPICAL CHARACTERISTICS 100 2.4 2.0 V, VOLTAGE , Figure 5. Output Capacitance Motorola Bipolar Power Transistor Device Data 3­463 MJ10015 , TUT 1N4937 OR EQUIVALENT Vclamp RS = 0.1 2 Rcoil Lcoil VCC IB1 adjusted to obtain the forced hFE , INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1 Rcoil Lcoil VCC IC
Motorola
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2sc1173 equivalent Silicon NPN Power Transistors equivalent of TIP122 2N3773 equivalent 2N6059 equivalent BD435/fw26025a1 equivalent 2sd526 equivalent 204AE TIPL760 TIPL760A MJE16002

TRANSISTOR REPLACEMENT GUIDE

Abstract: bd139 equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor 1 kV SWITCHMODE Series , value. REV 3 3­830 Motorola Bipolar Power Transistor Device Data , %. Motorola Bipolar Power Transistor Device Data 3­831 MJH16006A TYPICAL STATIC CHARACTERISTICS VCE , . Capacitance 3­832 Motorola Bipolar Power Transistor Device Data MJH16006A TYPICAL INDUCTIVE , Transistor Device Data 3­833 MJH16006A Table 1. Inductive Load Switching Drive Circuit +15 1 µF 150
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2SC495 mje13007 equivalent 2sd880 equivalent BDX53 equivalent pin configuration NPN transistor tip41c BDX37 equivalent

2n3773 b2

Abstract: SDT9207 "cross reference" 1 3­520 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Power Transistor Device Data 3­521 MJ16018 MJW16018 TYPICAL STATIC CHARACTERISTICS VCE , Transistor Device Data MJ16018 MJW16018 TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS 2000 1000 t c , Transistor Device Data MJ16018 MJW16018 100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80 , are two limitations on the power handling ability of a transistor: average junction temperature and
Motorola
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2n3773 b2 SDT9207 "cross reference" 2SC1030 "cross reference" equivalent bu808 bd433 BD129 equivalent

BUT34 equivalent

Abstract: 2N3055 DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high­voltage , Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Bipolar Power Transistor Device Data 3­371 BUT34 TYPICAL CHARACTERISTICS VCE , COLLECTOR­EMITTER , Response 3­372 Motorola Bipolar Power Transistor Device Data BUT34 Table 1. Test Conditions for , % VD TEST CIRCUITS TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS
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BUT34 equivalent 2N3055 BU323A equivalent BU100 motorola diode cross reference bc 574 transistor

2N6058

Abstract: BU108 Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ , Motorola Bipolar Power Transistor Device Data 3­473 MJ10022 MJ10023 TYPICAL ELECTRICAL , Figure 6. Cob, Output Capacitance 3­474 Motorola Bipolar Power Transistor Device Data MJ10022 , TUT 1N4937 OR EQUIVALENT Vclamp RS = 0.1 2 Rcoil Lcoil VCC IB1 INPUT SEE ABOVE FOR DETAILED , TIME t2 t2 Vclamp t (ICM) [ Lcoil Vclamp Test Equipment Scope - Tektronix 475 or Equivalent
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2N6058 application MJ10023 2SB56 mj15004 equivalent MJ15022 equivalent

TIP35C transistor replacement

Abstract: TIP35C replacement overall value. Motorola Bipolar Power Transistor Device Data 3­879 , 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 2. Switching Time Equivalent Test Circuits Figure 3. Turn­On Time 3­880 Motorola Bipolar Power Transistor Device Data TIP35A , ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; i.e., the
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TIP35C transistor replacement TIP35C replacement 2N3055 equivalent 2n3772 EQUIVALENT TIP36A TIP35B TIP36B TIP35C TIP36C

texas 2n3055

Abstract: BU108 Area Motorola Bipolar Power Transistor Device Data 3­3 2N3055 MJ2955 NPN 2N3055 500 300 200 , Operating Area 2N3055 * PNP MJ2955* *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , future use and best overall value. 3­2 Motorola Bipolar Power Transistor Device Data , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 2N3055 MJ2955 2N3055, MJ2955 , 500 µs 250 µs dc 1 ms There are two limitations on the power handling ability of a transistor
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texas 2n3055 2N5655 equivalent 2n3055 replacement 2n3055 MJ15003 2N3055/2N3055 transistor equivalent to220 2N5981 pnp transistor

MJ802 EQUIVALENT

Abstract: bd139 equivalent Voltages Leakage Currents MAXIMUM RATINGS (2) · · · · · 15 AMPERE NPN SILICON POWER TRANSISTOR 450 VOLTS , Bipolar Power Transistor Device Data 3­151 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , %. 3­152 Motorola Bipolar Power Transistor Device Data 2N6836 TYPICAL STATIC CHARACTERISTICS VCE , . Collector Cutoff Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3­153 , . Crossover Time Figure 12. Crossover Time 3­154 Motorola Bipolar Power Transistor Device Data
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mje521 equivalent TIP41C EQUIVALENT MJE3055T equivalent equivalent buv18a CASE 221A Style 1 2SC1116 equivalent

transistor equivalent book 2SC2073

Abstract: D45H11 equivalent replacement for future use and best overall value. REV 2 3­688 Motorola Bipolar Power Transistor Device , : PW = 300 µs, Duty Cycle I *f = C IB1 2%. Motorola Bipolar Power Transistor Device Data 3­689 , . Collector­Emitter Saturation Region 3­690 Figure 4. Base­Emitter Voltage Motorola Bipolar Power Transistor Device , Motorola Bipolar Power Transistor Device Data 3­691 MJE16002 MJE16004 TYPICAL DYNAMIC , Figure 15. Thermal Response (MJE16002 and MJE16004) 3­692 Motorola Bipolar Power Transistor Device
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BUT11Af equivalent BDX36 equivalent mje521 equivalent transistor transistor mj11028 equivalent 2SD669 equivalent P6042 MJH16002

D45H11 equivalent replacement

Abstract: 2N5036 equivalent Transistor with Base-Emitter Speedup Diode The MJ10009 Darlington transistor is designed for high­voltage , value. REV 2 Motorola Bipolar Power Transistor Device Data 3­451 , Motorola Bipolar Power Transistor Device Data MJ10009 TYPICAL CHARACTERISTICS 400 TJ = 150°C hFE, DC , 5. Collector Cutoff Region Figure 6. Output Capacitance Motorola Bipolar Power Transistor , EQUIVALENT Vclamp RS = 0.1 Rcoil Lcoil VCC VCE VCE or Vclamp t1 tf IC(pk) tf UNCLAMPED [ t2 t1
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2N5036 equivalent BDW93C equivalent 2SD218 equivalent BD140 circuits BD420 equivalent 2SB557 equivalent

CASE 221A Style 1

Abstract: BU108 Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ , Motorola Bipolar Power Transistor Device Data 3­467 MJ10020 MJ10021 TYPICAL ELECTRICAL , Figure 6. Output Capacitance 3­468 Motorola Bipolar Power Transistor Device Data MJ10020 , DETAILED CONDITIONS PW Varied to Attain IC = 100 mA 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1 RBSOA AND , 1 2 TUT RL VCC Test Equipment Scope - Tektronix 475 or Equivalent * Adjust ­ V such that VBE
Motorola
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2N555 Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 MJE520 equivalent

BU108

Abstract: tip3055 equivalent overall value. 3­644 Motorola Bipolar Power Transistor Device Data , Transistor Device Data 3­645 MJE5850 MJE5851 MJE5852 TYPICAL ELECTRICAL CHARACTERISTICS 200 100 hFE , . Collector Cutoff Region Figure 6. Capacitance 3­646 Motorola Bipolar Power Transistor Device Data , TEST CIRCUITS TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 1N4937 OR EQUIVALENT Vclamp RS = 0.1 Rcoil Lcoil VCC TUT RL VCC Test Equipment Scope - Tektronix 475 or Equivalent 1.0 tc 100°C t c
Motorola
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tip3055 equivalent equivalent of 2sc2071 mje2055 2N6107 equivalent 2N6576 equivalent

2SA627

Abstract: BD130 TO126 Transistors with Base-Emitter Speedup Diode The MJ10007 Darlington transistor is designed for high­voltage , Bipolar Power Transistor Device Data 3­445 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , 3­446 Motorola Bipolar Power Transistor Device Data MJ10007 TYPICAL CHARACTERISTICS 300 200 hFE , Figure 6. Output Capacitance Motorola Bipolar Power Transistor Device Data 3­447 MJ10007 Table , SWITCHING INPUT CONDITIONS 0 1N4937 OR EQUIVALENT Vclamp RS = 0.1 PW Varied to Attain IC = 250
Motorola
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2SA627 BD130 TO126 BDX33D equivalent TIP-551 transistor BC 458 2sc2068
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