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Abstract: curve tracer. OASE TEMPERATURE Tc I'CI 001 003 0.1 0.J t COLLECTOR CURRENT lc (A) Fig. 1 - Power dissipation vs. temperature derating curve lor 2N3055. Fig. 2 - Typical dc-bela characteristics lor 2N3055 , Transistors _._ » 2N3055 File Number 1699 General-Purpose Power Transistor Broadly Applicable Devices , RCA-2N3055 silicon n-p-n transistor Intended for a wide variety of medium-voltage, high-current applications. , Case Temperature (Tc) = 25°C Unlet! Otherwlie Specllled 2N3055 CHARACTERISTIC TEST CONDITIONS ... OCR Scan
datasheet

3 pages,
88.67 Kb

terminals of 2n3055 hfe 2n3055 2N3055 NPN Transistor rca2n3055 power transistor 2n3055 2N3055 curve data transistor 2n3055 2N3055 power amplifier circuit TRANSISTOR 2n3055 2N3055 transistor 2N3055 typical applications RCA-2N3055 2N3055 2N3055 abstract
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Abstract: 2N3055, MJ2955 MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , V A 31/05/05 V1.0 2N3055, MJ2955 MJ2955 Complementary Power Transistors Thermal Characteristics , 300us, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055, MJ2955 MJ2955 , indicate. The data of SOA curve is based on TJ(PK) = 200°C; TC is variable depending on conditions. Second ... Original
datasheet

5 pages,
327.51 Kb

DC variable power with 2n3055 datasheet hfe 2n3055 2N3055 transistor equivalent power transistor 2n3055 2n3055 pin 2N3055 equivalent transistor NUMBER npn 2n3055 pnp transistor 2N3055 2N3055 transistor 2N3055/MJ2955 2n3055 collector characteristic curve transistor 2N3055 2N3055 MJ2955 2N3055 abstract
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Abstract: MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO , ://www.bocasemi.com 2N3055 NPN / MJ29S5 MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , than curves indicate. The data of SOA curve is base on Tj(PK)=200 °C;Tc is variable depending on , |hfe| °ftert 2N3055.MJ2955 MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E * -Bcndng VWre Limit , (VOLTS) http://www.bocasemi.com 2N3055 NPN / MJ2955 MJ2955 PIMP NPN 2N3055 DC CURRENT GAIN PNP MJ2955 MJ2955 DC ... OCR Scan
datasheet

3 pages,
172.37 Kb

MJ2955 2N3055/MJ2955 2N3055 curve npn 2n3055 MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2n3055 datasheet abstract
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Abstract: PNP 2N3055 MJ2955 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V , 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3055 NPN / MJ29S5 MJ29S5 , curves indicate. The data of SOA curve is base on Tj(PK)=200 °C;Tc is variable depending on conditions , 300 us , Duty Cycle ^ 2.0% fT= |hf9| °ftert 2N3055.MJ2955 MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E * - Bcndng VWre Limit - Thermally United Tc-2S°C (Sintfe PJte) - Second Breakdown Limit 60 2N3055 ... OCR Scan
datasheet

3 pages,
167.65 Kb

MJ2955 2N3055/MJ2955 2N3055 curve 2n3055 collector characteristic curve 2n3055 amplifier 2n3055 application note MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2n3055 datasheet abstract
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Abstract: V A A ma 2N3055 117 100 60 7 15 20 70 ~4~ 4 1.1 1.8 4 .4 5.0 2N6253 2N6253 115 55 45 5 15 20 70 3 4 1.0 , BASE-TO-EMITTER VOLTAGE (V„> - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N3055 AND2N6371 AND2N6371 CASE TEMPERATURE (Tc I , CHARACTERISTICS FOR TYPE 2N3055 AND 2N6371 2N6371 COLLECTOR-TO-EMITTER VOLTAGE IVC1I 4V 0.8 < I S 0.6 t-z Ui S a , V MAXIMUM OPERATING AREAS FOR TYPES 2N3055 AND 2N6253 2N6253 100 < I S s io I CASE TEMPERATURE , OPERATION FOR TYPE 2N6371 2N6371 100 100 CASE TEMPERATURE (Tc) = 25*C (CURVE MUST BE DERATED LINEARLY WITH ... OCR Scan
datasheet

3 pages,
304.85 Kb

power transistor 2n3055 J 2N3055 2N6371 2N6254 2n3055 collector characteristic curve 2n3055 curve 2N3055 TO-3 2N30ss 2N6253 2n3055 2N3055 2N3055 abstract
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Abstract: boosts them to ± 30V to drive power transistors, (e.g. 2N3055 (NPN) and 2N3789 2N3789 (PNP). The outputs from , Figure 13: Typical Performance Curve of Max. Output Current Vs. Vsupp For Fixed Rbias= O r « o O) u , attention should be paid to beta values. For 2N3055 and 2N3789 2N3789 transistors used in this circuit, beta should , the output transistors (2N3055 and 2N3789 2N3789) will be destroyed, but since the safe operating area for , heat sinks for the 2N3055 and 2N3791 2N3791 power transistors. A Delta NC-641 NC-641 or the equivalent is ... OCR Scan
datasheet

9 pages,
740.78 Kb

2N3055 power amplifier circuit diagram NC-641 2n3055 collector characteristic curve 2n3055 how to work ICL8063CJE 24v dc motor 2n3055 motor control circuits pin configuration transistor 2n3055 2N3055 12V ICL8063 transistor Y2W 2N3055 power amplifier circuit ICL8063 abstract
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Abstract: boosts them to ±30V to drive power transistors, (e.g. 2N3055 (NPN) and 2N3789 2N3789 (PNP)>. The outputs from , Performance Curve of Max. Output Current Vs. Vsupp For Fixed Rbias = 1Mil 5-216 ICL8063 ICL8063 When buying external power transistors, careful attention should be paid to beta values. For 2N3055 and 2N3789 2N3789 , +60 « ? +w * +40 +20 ¡¡mmmuL However if Vout is shunted to +30V the output transistors (2N3055 , 2 watt value should be used. Use large heat sinks for the 2N3055 and 2N3791 2N3791 power transistors. A ... OCR Scan
datasheet

8 pages,
341.84 Kb

2N3055 transistor equivalent high fidelity amplifier 2N3055 12V 2N305S 2n3055 circuit diagram how to connect 2N3055 an 214 amp schematic diagram ilr3 24V "DC Motor" 2N3055 diagram with power supply ICL8083 equivalent 2N3055 equivalent transistor NUMBER JCL8063 JCL8063 abstract
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Abstract: 3.88 4.36 K 10.67 NPN 2N3055 11.18 Dimensions : Millimetres Page 1 15 Ampere , greater dissipation than curves indicate. The data of SOA curve is base on TJ(PK) = 200°C; TC is , (Volts) Part Number Table Description Part Number Transistor, NPN To-3 2N3055 Page 5 ... Original
datasheet

6 pages,
149.77 Kb

2n3055 malaysia 2n3055 collector characteristic curve 2N3055 2N3055 curve 200 Ampere power transistor 2N3055 NPN Transistor datasheet abstract
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Abstract: PNP SILICON POWER TRANSISTOR The 2N6594 2N6594 is a general-purpose,EPIBAS power transistor designed for low voltage amplifier power switching applications. It is a complement to the NPN 2N6569 2N6569 Boca Semiconductor Corp ^S^e Operating Area- Full Power Rating to 40V http://www.bocasemi.com * EPIBASE Performance in Gain and Speed * Lower Voltage, Economical Complement to the 2N3055 MAXIMUM RATINGS , of SOA curve is base on Tj(Rk)=200 °C;Tc is variable depending on conditions, second breakdown pulse ... OCR Scan
datasheet

3 pages,
158.97 Kb

S200 pnp transistor 2N3055 2N6594 2N6569 2N3055 2n3055 collector characteristic curve 2N6S94 2N6594 abstract
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Abstract: ¿2&M0SPEC PNP SILICON POWER TRANSISTOR The 2N6594 2N6594 is a general-purpose,EPIBAS power transistor designed for low voltage amplifier power switching applications. It is a complement to the NPN 2N6569 2N6569 FEATURES: * Safe Operating Area- Full Power Rating to 40V * EPIBASE Performance in Gain and Speed * Lower Voltage, Economical Complement to the 2N3055 MAXIMUM RATINGS Characteristic Symbol 2N6S94 2N6S94 Unit , of SOA curve is base on Tj(Rk)=200 °C;Tc is variable depending on conditions, second breakdown pulse ... OCR Scan
datasheet

3 pages,
154.7 Kb

S200 m0spec 2N3055 2N6594 2N6569 2N3055 200 Ampere power transistor 2N6S94 2N6594 abstract
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MMBTA42 MMBTA42 MMBTA42 MMBTA42 BJTs NPN Philips 300V 100mA High Voltage Transistor 2N3054A 2N3054A 2N3054A 2N3054A QN3054A QN3054A QN3054A QN3054A BJTs NPN Power 55V 4A 2N3055 QN3055 QN3055 QN3055 QN3055 BJTs NPN Power 60V 15A 2N3447 2N3447 2N3447 2N3447 QN3447 QN3447 QN3447 QN3447 BJTs NPN Power 60V 7.5A 2N3448 2N3448 2N3448 2N3448 QN3448 QN3448 QN3448 QN3448 BJTs NPN Power Behavioral Function Block Interpolation CURVE4 CURVE4 Behavioral Function Block 4 Point curve DEADBAND
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