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Part : 2N3054 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 356 Best Price : $3.80 Price Each : $4.54
Part : 2N3054 Supplier : Central Semiconductor Manufacturer : Future Electronics Stock : 139 Best Price : $8.63 Price Each : $21.95
Part : 2N3054 Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 9,914 Best Price : $1.8184 Price Each : $4.4352
Part : 2N3054 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 3 Best Price : $3.36 Price Each : $3.36
Part : 2N3054 Supplier : NJS Manufacturer : Bristol Electronics Stock : 1 Best Price : - Price Each : -
Part : 2N3054 Supplier : Solitron Devices Manufacturer : Bristol Electronics Stock : 1 Best Price : - Price Each : -
Part : 2N3054A Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 19,587 Best Price : $1.8184 Price Each : $4.4352
Part : 2N3054 Supplier : NJ Manufacturer : basicEparts Stock : 180 Best Price : - Price Each : -
Part : 2N3054 Supplier : Motorola Manufacturer : Chip One Exchange Stock : 768 Best Price : - Price Each : -
Part : 2N3054 Supplier : - Manufacturer : Chip One Exchange Stock : 95 Best Price : - Price Each : -
Part : 2N3054-ASI Supplier : - Manufacturer : Chip One Exchange Stock : 124 Best Price : - Price Each : -
Part : 2N3054 Supplier : NTE Electronics Manufacturer : Farnell element14 Stock : - Best Price : £1.27 Price Each : £2.20
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2N3054(S) Datasheet

Part Manufacturer Description PDF Type
2N3054S N/A Transistor Shortform Datasheet & Cross References Scan
2N3054S N/A Transistor Replacements Scan
2N3054S N/A Cross Reference Datasheet Scan
2N3054S N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3054S N/A Shortform Data and Cross References (Misc Datasheets) Scan
2N3054S N/A Shortform Transistor Datasheet Guide Scan

2N3054(S)

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Forward Current Transfer Ratio (f = 1 kHz) Forward Bias Second Breakdown Collector 40 !S/b New Jersey Semiconductor
Original
2N6261 40250 40372 40250 Transistor 2N6260 2N3064 40250V1 RDF-10 2N3054I
Abstract: Condition) : 4.0 t(d) Max. (s) Delay time. : t(r) Max. (s) Rise time : t(on) Max. (s) On time. : t(s) Max. (s) Storage time. : t(f) Max. (s) Fall time. : t(off) Max. (s) Off time : 1 of 2 11/7/2009 1:54 -
Original
Abstract: .9 1 ) t .250(6.35) .34 0(8.64) ( r s â¼ 1 ' ' 1 ' â¼ 1 1 1 1 1 1 t .360(9.14) MINIMUM 1 4 American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: 2N3054 2N3054A SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A devices are silicon NPN power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS , . c e n t r a l s e m i . c o m Central Semiconductor -
Original
J 2N3054 Ge 2n3054
Abstract: 2N3054 2N3054A NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A types are NPN silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC , NUMBER R1 (11-June 2012) w w w. c e n t r a l s e m i . c o m Central Semiconductor -
OCR Scan
Abstract: OPERATING REGION < 1 .0 5 0.8. -y 0.6 > â  z § 0.4 0.2 V S c\ V\> J ^k OX , of PIRGO. O E/EOAR Litho in U. S. Amer. This Material Copyrighted By Its Respective Central Semiconductor
Original
Abstract: 3.0 Amperes Complement to PNP Type 2N 6049 or 2N 4912 ·M A X IM U M R ATIN G S Rating , * 2.0 25 0.143 Unit Vdc Vdc Vdc Vdc Ade Ade Watts w /° c °c s e a t in g p l a n e STYLE 1: PIN ?. BASE 2. EMITTER CASE: COLLECTOR - 6 5 to +200 T H E R M A L C HA R AC TER ISTIC S Characteristic , K P Q S T u M ILLIf ETERS MIN MAX 11.94 5.35 0.71 1.27 24.33 4.83 * 2.41 14.48 9.14 12.70 8.64 , T'33-o Central Semiconductor
Original
Amplifier Transistor NPN 40V 100mA TO-66 CASE
Abstract: Ic to 80 A . Pt to 300 W . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES lc - 1.6 A max. PT-8.76 W max. ITO-391- Ie- 1.5 A max. PT - 8.7S W max. (TO-39)* lc - 3.S A max. PT â  10 W max. ITOMI- lc - « A max. PT " SO W max. ITO«)" lc â  4 A max. Py - 36 W max. VERSAWATT ITO-220) le â'¢ 3 , )-130V h =20-100 ® 1A fj= 0. S MHz min. 2N5491 2N5490 VCERlsus} - 50 V hFE â'¢ 20-100 02 A fT = 0.8 MHz , radiator R0ja s 30° C/W 2N6261 VCERlsusl â  85 V hFE â  25-100 ® 1.5 A fy = 0.8 MHz min. PT -
OCR Scan
SAP 17 TRANSISTOR VOLTAGE AND AMP pirgo 2N3054 Pirgo Electronics SAP 17 TRANSISTOR 104351-5
Abstract: Ic to 80 A . Pt to 300 W . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES lc - 1.6 A max. PT-8.76 W max. ITO-391- Ie- 1.5 A max. PT - 8.7S W max. (TO-39)* lc - 3.S A max. PT â  10 W max. ITOMI- lc - « A max. PT " SO W max. ITO«)" lc â  4 A max. Py - 36 W max. VERSAWATT ITO-220) le â'¢ 3 , )-130V h =20-100 ® 1A fj= 0. S MHz min. 2N5491 2N5490 VCERlsus} - 50 V hFE â'¢ 20-100 02 A fT = 0.8 MHz , radiator R0ja s 30° C/W 2N6261 VCERlsusl â  85 V hFE â  25-100 ® 1.5 A fy = 0.8 MHz min. PT -
OCR Scan
te 2443 MOTOROLA transistor 2443 MOTOROLA transistor motorola 2N3054 2N3054 motorola
Abstract: 9.14 - 0,360 - P - 1.27 - 0.050 n 3.61 3.86 0.142 0.152 s _ 8.89 â'" 0.350 T - 3.68 - 0.145 U - , (ms) FIGURE S - ACTIVE-REGtON SAFE OPERATING AREA 2.0 3.0 5.0 â'¢ 7.0 10 20 30 40 50 60 VCE , REGION FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE I03 - I02 Ï ^ § 101 e e % loo S 5 J -
OCR Scan
2N1482 2N5786 2N5298 2N344 2N6478 2N5575 ITO-2201 ITO-31
Abstract: Ic to 80 A . Pt to 300 W . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES lc - 1.6 A max. PT-8.76 W max. ITO-391- Ie- 1.5 A max. PT - 8.7S W max. (TO-39)* lc - 3.S A max. PT â  10 W max. ITOMI- lc - « A max. PT " SO W max. ITO«)" lc â  4 A max. Py - 36 W max. VERSAWATT ITO-220) le â'¢ 3 , )-130V h =20-100 ® 1A fj= 0. S MHz min. 2N5491 2N5490 VCERlsus} - 50 V hFE â'¢ 20-100 02 A fT = 0.8 MHz , radiator R0ja s 30° C/W 2N6261 VCERlsusl â  85 V hFE â  25-100 ® 1.5 A fy = 0.8 MHz min. PT -
OCR Scan
2n3773 power Amplifier 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773
Abstract: 2N3054 TYPE 2N3054, 4 AM P NP*L T E R M IN A L C O N N E C T IO N S SILICON SINGLE-DIFFUSED POWER , / 620 High Dissipation, P d = 29W High Voltage, B V Cex = 90V Low Saturation Voltage, V c e (s a t ) = 1 . 0 V at le = 0 .5 A MAX 075 050 3 6 0 M IN A L L D IM E N S IO N S IN IN C H E S PACKAGE TO-66 ABSOLUTE M A X IM U M R A T IN G S AT 25 C CASE TEMPERATURE (u n le ss oth e rw ise noted) * V * t ¿ r t í - T- 'i `s.?-"-' 1 R A T IN G SYM BO L VcBO V ebo VcEO lc Ib VA -
OCR Scan
40312 radiator 2n3054 audio 40911 40310
Abstract: 0.140 Cl Hole Molded Toroid Molded To'oid B B 5 5 1.10 1.10 ¿ S u p p lie d w ith 4 -4 0 n y lo n m fg sc r e w a n d n u t in c e n t e r h o le . ' O u tp u t w h e n u s e d w ith s c h e m a t ic in d ic a te d . t F re q u e n c y d e p e n d s o n lo ad a n d b ia s c o n d itio n s All Converter Transformers are Supplied with Engineering Bulletin Listing Com ponent Values -
OCR Scan
2N6049 2N4912 8002 Amplifier IC TIC 2N3054 2N3054 transistor equivalent 2N3054A MOTOROLA 2n60 T-33- T-33-/3 150UC
Abstract: . PT-8.76 W max. ITO-391- Ie- 1.5 A max. PT - 8.7S W max. (TO-39)* lc - 3.S A max. PT â  10 W max , )-130V h =20-100 ® 1A fj= 0. S MHz min. 2N5491 2N5490 VCERlsus} - 50 V hFE â'¢ 20-100 02 A fT = 0.8 MHz , radiator R0ja s 30° C/W 2N6261 VCERlsusl â  85 V hFE â  25-100 ® 1.5 A fy = 0.8 MHz min. PT , ) 40595 (2N5322) - 40999 (2N5415) 40999 (2N5415) 80 180W 120W Quasi-Comp. Paral. out. (4) 40983's (2N5240) - 40871 (2N6292) 40872 (2N6111) - 40987 (2N5416) 130W 300W 200W Quasi-Comp. Paral. out. (6) 40988's -
OCR Scan
rca 40250 RCA transistor 40312 RCA 40250 transistor 40310 rca 40372 RCA RCA 40310 2N5578 2N5295 2NS296 2N6263 FE-20-100 2N6477
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