2N3019 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results |
1 - 50 of about 95 for 2N3019 |
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2N3019 |
Advanced Semiconductor, Inc. |
Silicon Transistor Selection Guide |
384.32 Kb, 5 Pages. |
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2N3019 |
Boca Semiconductor |
GENERAL TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
136.26 Kb, 3 Pages. |
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2N3019 |
Central Semiconductor |
NPN METAL CAN - SWITCHING AND GENERAL PURPOSE |
336.68 Kb, 3 Pages. |
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2N3019 |
Central Semiconductor |
Small Signal Transistors |
53.63 Kb, 1 Pages. |
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2N3019 |
Continental Device India Limited |
Semiconductor Device Data Book 1996 |
90.29 Kb, 1 Pages. |
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2N3019 |
Continental Device India Limited |
Npn Silicon Planar Epitaxial Transistors |
180.86 Kb, 4 Pages. |
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2N3019 |
Crimson Semiconductor |
Transistor Selection Guide |
1453.37 Kb, 36 Pages. |
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2N3019 |
Diode Transistor Co., Inc. |
SMALL SIGNAL TRANSISTORS |
71.14 Kb, 1 Pages. |
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2N3019 |
Fairchild Semiconductor |
Full Line Condensed Catalogue 1977 |
51.46 Kb, 1 Pages. |
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2N3019 |
Fairchild Semiconductor |
NPN small signal general purpose amplifier. - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
375.74 Kb, 10 Pages. |
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2N3019 |
General Diode |
Transistor Selection Guide |
594.42 Kb, 10 Pages. |
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2N3019 |
General Transistor Corp. |
Small Signal Transistor Selection Guide |
351.91 Kb, 4 Pages. |
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2N3019 |
Infineon Technologies |
TRANS GP BJT NPN 80V 1A 3TO 39 |
136.01 Kb, 5 Pages. |
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2N3019 |
Micro Electronics |
Semiconductor Devices |
81.71 Kb, 1 Pages. |
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2N3019 |
Micro Electronics |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
144.72 Kb, 2 Pages. |
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2N3019 |
Micro Electronics |
Semiconductor Device Data Book |
63.39 Kb, 1 Pages. |
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2N3019 |
Microsemi Corporation |
Low Power NPN Silicon Transistor |
59.44 Kb, 2 Pages. |
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2N3019 |
Motorola |
European Master Selection Guide 1986 |
39.56 Kb, 1 Pages. |
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2N3019 |
Motorola / Freescale Semiconductor |
Bipolar Transistor, General Transistors NPN Silicon - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
154.2 Kb, 4 Pages. |
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2N3019 |
Mullard |
Quick Reference Guide 1977/78 |
430.29 Kb, 16 Pages. |
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2N3019 |
National Semiconductor |
Medium Power Transistors |
492.83 Kb, 16 Pages. |
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2N3019 |
National Semiconductor |
General Purpose Amplifiers and Switches |
41.58 Kb, 1 Pages. |
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2N3019 |
National Semiconductor |
Transistors |
735.26 Kb, 20 Pages. |
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2N3019 |
National Semiconductor |
Medium Power NPN Transistors |
493.49 Kb, 16 Pages. |
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2N3019 |
New England Semiconductor |
SMALL SIGNAL NPN TRANSISTOR |
36.14 Kb, 1 Pages. |
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2N3019 |
Philips Semiconductors / NXP Semiconductors |
Small-signal Transistors |
4.51 Kb, 1 Pages. |
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2N3019 |
Philips Semiconductors / NXP Semiconductors |
NPN medium power transistor - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
48.77 Kb, 8 Pages. |
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2N3019 |
Philips Semiconductors / NXP Semiconductors |
Silicon Planar Epitaxial Transistor |
57.11 Kb, 3 Pages. |
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2N3019 |
Raytheon Company |
Selection Guide 1977 |
94.59 Kb, 2 Pages. |
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2N3019 |
Semelab |
BJT, NPN, Silicon Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
17.6 Kb, 2 Pages. |
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2N3019 |
Semelab |
NPN Silicon Transistor - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
34.86 Kb, 2 Pages. |
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2N3019 |
Semicoa Semiconductor |
NPN General Purpose Medium Speed Amplifiers |
180.36 Kb, 1 Pages. |
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2N3019 |
Semicoa Semiconductor |
Type 2N3019 Geometry 4500 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
42.81 Kb, 2 Pages. |
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2N3019 |
Semicoa Semiconductor |
Chip: geometry 4500 polarity PNP - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
28.78 Kb, 1 Pages. |
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2N3019 |
Semicoa Semiconductor |
Chip: 7.0V geometry 4500 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
43.06 Kb, 2 Pages. |
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2N3019 |
Semiconductor Technology, Inc. |
Small Signal Transistors |
146.2 Kb, 1 Pages. |
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2N3019 |
Semiconductors, Inc. |
Medium Power Transistors |
1256.04 Kb, 12 Pages. |
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2N3019 |
Semitronics Corp. |
Metal Can Transistors - Silicon Small Signal Transistors |
329.43 Kb, 4 Pages. |
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2N3019 |
SGS-Ates |
Semiconductor Data Book 1976/77 |
301.13 Kb, 3 Pages. |
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2N3019 |
SGS-Ates |
Small Signal Transistors 3rd Edition 1978 |
213.68 Kb, 3 Pages. |
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2N3019 |
SGS-Ates |
Shortform Data Book 1977/78 |
37.63 Kb, 1 Pages. |
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2N3019 |
Siemens Semiconductors |
Cross Reference Guide 1998 |
26.71 Kb, 7 Pages. |
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2N3019 |
Siemens Semiconductors |
NPN SILICON PLANAR TRANSISTOR - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
136.01 Kb, 5 Pages. |
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2N3019 |
STMicroelectronics |
TRANS GP BJT NPN 80V 1A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
44.77 Kb, 4 Pages. |
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2N3019 |
STMicroelectronics |
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 |
66.15 Kb, 4 Pages. |
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2N3019 |
STMicroelectronics |
Shortform Data Book 1988 |
38.25 Kb, 1 Pages. |
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2N3019 |
Telefunken Electronic |
Electronic Component Data Book 1976 |
54.15 Kb, 1 Pages. |
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2N3019 |
Telefunken Electronic |
Low Power Transistor Data Book 1977 |
107.03 Kb, 4 Pages. |
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2N3019 |
Thomson-CSF |
Shortform Semiconductor Catalogue 1982 |
179.17 Kb, 2 Pages. |
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2N3019 |
N/A |
Shortform Data and Cross References (Misc Datasheets) |
40.52 Kb, 1 Pages. |
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Datasheets per page: 50 | 250 | 500 |
| Fulltext Datasheet Results |
1 - 50 of about 120 for 2N3019 |
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First line: 2n3019 equivalent 2N3019 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 transistors mounted TO-39 metal case They intended high-current, high-frequency amplifier applications. They feature high gain saturation voltages. Compliance RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO TStg Abstract: .. NPN 2N3019 – 2N3020 2N3020 . COMSET SEMICONDUCTORS 1/3. The 2N3019 and 2N3020 2N3020 are NPN transistors mounted in TO-39 TO-39 metal case . They are intended for high-current, high-frequency amplifier applications .. Tags: 2n3019 transistor 2n3019 equivalent 2n3019 2N3019 2N3020 |
166.36 Kb |
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First line: 2N3019 motorola Boca Semiconductor Corp. Rating Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage vceo Collector-Base Voltage VCBO Emitter-Base Voltage vebo Collector Current Continuous Total Device Dissipation Derate above 2.85 Watts Total Device Dissipation Derate above 28.6 10.6 Watts Abstract: .. Boca Semiconductor Corp. MAXIMUM RATINGS Rating Symbol 2N3019 2N3020 2N3020 2N3700 2N3700 Unit Collector-Emitter Voltage vceo 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Emitter-Base Voltage vebo .. Tags: 2N3019 motorola datasheet abstract.. |
154.82 Kb |
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First line: 2N3700UB 2n3019 equivalent POWER SILICON TRANSISTOR Qualified MIL-PRF-19500/391 Devices 2N3019 2N3019S Qualified Level JANTX JANTXV JANS 2N3057A Abstract: .. 1 Derate linearly 4.6 mW/ 0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A 2N3057A ; 2.85 mW/0C for type 2N3700 2N3700 ; 6.6 mW/0C for type 2N3700UB 2N3700UB for TA ≥ +250C 250C . 2 Derate linearly 28.6 mW/0C for type .. Tags: 2n3019 equivalent test 2N3700 2N3700UB 2n3019 2N3019 2N3019S 2N3057A |
59.44 Kb |
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First line: 2n3019 equivalent 2N3700UB 2N3019 JAN, JTX, JTXV, JANS 2N3019S JAN, JTX, JTXV, JANS 2N3057A JAN, JTX, JTXV, JANS 2N3700 JAN, JTX, JTXV, JANS 2N3700UB JAN, JTX, JTXV, JANS Processed MIL-PRF-19500/391 MIL-PRF DEVICES Abstract: .. 2N3019; 2N3019S 2N3057A 2N3057A 2N3700 2N3700 2N3700UB 2N3700UB . @ TC = +25 0 C 2 2N3019; 2N3019S 2N3057A 2N3057A 2N3700 2N3700 2N3700UB 2N3700UB . PT. 0.8 0.5 0.5 0.5. 5.0 1.8 1.8 1.16. W. W. Operating & Storage Jct Temp Range TJ, Tstg -65 to +175. 0 C. THERMAL .. Tags: 2n3019 equivalent test 2N3700 2N3700UB 2N3019 206a* 2N3019 2N3019S 2N3057A 2N3700 2N3700UB |
30.11 Kb |
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First line: BC107 equivalent 2N329A BCY90 BC178B 2n3019 equivalent Discrete Devices European "Pro Electron" Types Type Near Equivalent Polarity Pkg. BC107 2N2484 TO-18 BC107A 2N930 TO-18 BC107B 2N930 TO-18 BC108 2N2484 TO-18 BC108A 2N930 TO-18 BC108B 2N930 TO-18 Abstract: .. BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 2N930 NPN TO-18 TO-18 BC109C BC109C 2N3117 2N3117 NPN TO-18 TO-18 BC140 BC140 2N3019 NPN TO-39 TO-39 BC140-6 BC140-6 2N3019 NPN TO-39 TO-39 BC140-10 BC140-10 2N3019 NPN TO-39 TO-39 BC140-16 BC140-16 2N3019 NPN TO-39 TO-39 BC141 BC141 2N3019 NPN TO-39 TO-39 .. Tags: 2n3019 equivalent BC178B BCY90 2N329A BC107 equivalent datasheet abstract.. |
67.9 Kb |
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First line: 2N3019 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Package Abstract: .. NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019. 2N3020 2N3020 . TO-39 TO-39 Metal Can Package. Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also .. Tags: 2n3019 transistor 2n3019 equivalent 2N3019 CDIL 2N3019 2N3019 2N3020 |
180.86 Kb |
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First line: 2n3019 equivalent 2N3700UB 2n3700ub* Data Sheet 2C3019 Chip Type 2C3019 Geometry 4500 Polarity Generic Packaged Parts: 2N3019, 2N3057 Chip type 2C3019 Semicoa Semiconductors provides performance similar these devices. Abstract: .. 2N3019, 2N3057 2N3057 . Chip type 2C3019 2C3019 by Semicoa Semi-conductors provides performance similar to these devices. Product Summary: Part Numbers: 2N3019, 2N3019S, 2N3019UB, 2N3057 2N3057 , 2N3057A 2N3057A , 2N3700 2N3700 .. Tags: 2n3700ub* pnp for 2n3019 2N3700ub 2n3019 equivalent 2n3019 2N3019 2N3057 |
28.79 Kb |
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First line: Semiconductor Corp. Adams Avenue, Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 Manufacturers World Class Discrete Semiconductors 2N3019 2N3020 Silicon Transistor JEDEC TO-39 Case UtSCRIPI CENTRAL SEMICONDUCTOR 2N3019, 2N3020 Silicon Transistors designed high current general purpose ampli Abstract: .. -1110 †Fax: 631 435-1824 Manufacturers of World Class Discrete Semiconductors 2N3019 2N3020 2N3020 NPN Silicon Transistor JEDEC TO-39 TO-39 Case UtSCRIPI I UN The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 2N3020 .. Tags: datasheet abstract.. |
77.39 Kb |
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First line: Small Signal Transistor CP305 High Current Transistor Chip Abstract: .. PRINCIPAL DEVICE TYPES 2N3019. CMPT3019 CMPT3019 . CXT3019 CXT3019 . CZT3019 CZT3019 . GROSS DIE PER 4 INCH WAFER 11,212 .. Tags: CP305 |
469.3 Kb |
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First line: 2N3019 CDIL IS/ISO 9002 Lic# QSC/L- 000019.2 SILICON PLANAR EPITAXIAL TRANSISTORS Abstract: .. NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019. 2N3020 2N3020 . TO-39 TO-39 . Metal Can Package. Designed For Use in General Purpose Amplifier And High Speed Switching Applications. These Transistors are Also .. Tags: 2N3019 CDIL datasheet abstract.. |
121.15 Kb |
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First line: Small Signal Transistor High Current Transistor Chip CP305 Abstract: .. PRINCIPAL DEVICE TYPES 2N3019 CMPT3019 CMPT3019 CXT3019 CXT3019 CZT3019 CZT3019 . Process EPITAXIAL PLANAR. Die Size 31 x 31 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 5.9 x 11.8 MILS. Emitter Bonding Pad Area 6.5 x 13 .. Tags: CZT3019 2N3019 CP305 |
207.01 Kb |
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First line: Data Sheet 2N3019 Type 2N3019 Geometry 4500 Polarity Qual Level: JANS Features: General-purpose transistor switching amplifier applicatons. Housed TO-5 case. Also available chip form using 4500 chip geometry. limits shown MIL-PRF-19500/391 which Semicoa meets cases. Radiation Graphs available. Abstract: .. Type 2N3019. Geometry 4500 Polarity NPN Qual Level: JAN - JANS. Data Sheet No. 2N3019. Generic Part Number: 2N3019. REF: MIL-PRF-19500 MIL-PRF-19500 /391. Features: • General-purpose transistor for switching .. Tags: 2n3019 2N3019 |
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First line: BD827 pdf BC109C datasheet 2N4124 bc548 BCy56 replacement BC107 Replacement list REPLACEMENT/WITHDRAWAL TYPES following type numbers were previous issue this data handbook, current version: TYPE NUMBER 2N2297 2N2483 2N2904; 2N2904A 2N3020 2N3053 2N3439; 2N3440 2N4030 2N4032 2N4123 2N4125 2N4400 2N44 Abstract: .. 2N2297 2N2297 Replaced by 2N3019. 2N2483 2N2483 Replaced by 2N2484 2N2484 . 2N2904 2N2904 ; 2N2904A 2N2904A Replaced by 2N2905A 2N2905A . 2N3020 2N3020 Replaced by 2N3019. 2N3053 2N3053 Replaced by BSX45 BSX45 . 2N3439 2N3439 ; 2N3440 2N3440 Replaced by TO92 TO92 MPSA44 MPSA44 ; MPSA45 MPSA45 or BF487 BF487 .. Tags: BCy56 2N4124 bc548 BC109C datasheet BD827 pdf transistor BF451 Transistor BC109C* transistor bc107b Transistor BC107 transistor 2n4403 datasheet transistor 2N4033 transistor 2n3053 Transistor 2N2222A to126 replacement BC107 MPSA44, TO92 2N2297 2N2483 2N2904 2N2904A 2N3020 2N3053 2N3439 2N3440 2N4030 2N4032 2N4123 2N4125 2N4400 2N4402 2N930 2N3019 2N2484 2N2905A 2N4031 2N4033 2N4124 2N4126 2N4401 2N4403 2N2222A |
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First line: 2N3019 SMALL SIGNAL TRANSISTOR DESCRIPTION 2N3019 silicon Planar Epitaxial transistor Jedec TO-39 metal case, designed high-current, high frequency amplifier application. feature high gain saturation voltage. Abstract: .. The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage .. Tags: BE 187 TRANSISTOR 2n3019 2N3019 |
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First line: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION 2N3019 silicon planar epitaxial transistors Jedec TO-39 metal case, designed high-current, high frequency amplifier application. feature high gain saturation voltage. TO-39 Abstract: .. 2N3019. HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS. DESCRIPTION. The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 TO-39 metal case, designed for high-current, high frequency amplifier .. Tags: 2n3019 2N3019 |
66.15 Kb |
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First line: 2N3019 2N3020 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL TRANSISTORS 7110flSb PHIN 7=35"- N-P-N transistors TO-39 metal envelopes intended amplifiers switching circuits. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max. Collector-emitter voltage (open base) vCEO max. Abstract: .. JL 2N3019 2N3020 2N3020 PHILIPS INTERNATIONAL SbE T> I SILICON PLANAR EPITAXIAL TRANSISTORS 7110flSb 7110flSb D0LÂ 2b40 2b40 37^ â– PHIN 7=35"- N-P-N transistors in TO-39 TO-39 metal envelopes intended for use as amplifiers .. Tags: datasheet abstract.. |
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First line: 2N3019 CDIL SILICON PLANAR TRANSISTOR 2N3019 2N3020 TO-39 Metal Package Abstract: .. NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 2N3020 . TO-39 TO-39 Metal Can Package. General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL. Collector Emitter Voltage VCEO. Collector Base Voltage .. Tags: 2N3019 CDIL 2n3019 2N3019 2N3020 |
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First line: 2904a 2N328A BCY34 Transistors (Cont.) Discrete Devices General Purpose Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE<Sat)@lc/lB Min/Max Volts mA/mA 2N2897 50/200 500/50 TO-18 2N2898 40/120 500/50 T046 2N2899 60/200 500/50 Abstract: .. 150 0.5 500/50 120 15 TO 46 2N2900 2N2900 NPN 500 60 45 7 50/200 150 0.5 500/50 100 15 T046 T046 2N3019 NPN 800 140 80 7 100/300 150 0.2 150/15 100 12 TO-39 TO-39 2N3020 2N3020 NPN 800 140 80 7 40/120 150 0.2 150/15 100 12 TO-39 TO-39 2N3036 2N3036 .. Tags: BCY34 2N328A 2904a datasheet abstract.. |
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First line: 2N328A BCY34 2n3219 2N3913 BCY95 Discrete Devices Transistors (Cont.) Choppers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE@ VcEtSat) Ic/lB @>IB rrf@ Min/Max Volts mA/mA Ohms 2N943 10/- T0-18 2N2004 TO-39 2N2333 2.75 TO-18 Abstract: .. BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 2N930 NPN TO-18 TO-18 BC109C BC109C 2N3117 2N3117 NPN TO-18 TO-18 BC140 BC140 2N3019 NPN TO-39 TO-39 BC140-6 BC140-6 2N3019 NPN TO-39 TO-39 BC140-10 BC140-10 2N3019 NPN TO-39 TO-39 BC140-16 BC140-16 2N3019 NPN TO-39 TO-39 BC141 BC141 2N3019 NPN TO-39 TO-39 .. Tags: BCY95 2N3913 2n3219 BCY34 2N328A datasheet abstract.. |
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First line: 2N328A BCY34 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 2N930 NPN TO-18 TO-18 BC109C BC109C 2N3117 2N3117 NPN TO-18 TO-18 BC140 BC140 2N3019 NPN TO-39 TO-39 BC140-6 BC140-6 2N3019 NPN TO-39 TO-39 BC140-10 BC140-10 2N3019 NPN TO-39 TO-39 BC140-16 BC140-16 2N3019 NPN TO-39 TO-39 BC141 BC141 2N3019 NPN TO-39 TO-39 .. Tags: BCY34 2N328A datasheet abstract.. |
105.56 Kb |
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First line: 2N3019 2N3020 SILICON MEDIUM POWER AMPLIFIERS SWITCHES 2N3019, 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS MEDIUM POWER DRIVERS OUTPUTS, WELL SWITCHING APPLICATIONS AMPERE. THEY COMPLEMENTARY 2N4033, 2N4031. ABSOLUTE MAXIMUM RATINGS Collector-Base Collector-Emitter Voltage EmittJer-Base Voltage Coll Abstract: .. 2N3019 2N3020 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES THE 2N3019, 2N3020 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING .. Tags: datasheet abstract.. |
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First line: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION 2N3019 silicon planar epitaxial transistors Jedec TO-39 metal case, designed high-current, high frequency amplifier application. feature high gain saturation voltage. TO-39 Abstract: .. 2N3019. HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS. DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 TO-39 metal case, designed for high-current, high frequency amplifier .. Tags: 2n3019 2N3019 |
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First line: PHILIPS/DISCRETE ^53131 iilMJUiy 2N3020 SILICON PLNR EPITXIL TRNSISTORS N-P-N transistors TO-39 metal envelopes intended amplifiers switching circuits. QUICK REFERENCE Collector-base voltage (open emitter) vCB0 max. Collector-emitter voltage (open base) vCEO max. Abstract: .. ; VCE = 10 V Transition frequency at f = 20 MHz lc = 50 mA; VCE = 10 V hFE fT 2N3019 2N3020 2N3020 > 100 40 < 300 120 > 100 80 MECHANICAL DATA Fig. 1 TO-39 TO-39 . Collector connected to case Dimensions in mm 8,5 max L _ 6,6 .. Tags: datasheet abstract.. |
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First line: IC 7430 datasheet datasheet str 6707 str 6707 datasheet 2n3019 equivalent M3D111 2N3019 medium power transistor Abstract: .. 2N3019 NPN medium power transistor M3D111 M3D111 1997 Jun 19 2 Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES • High current max. 1 A • Low voltage .. Tags: 2n3019 equivalent datasheet str 6707 IC 7430 datasheet ic str 6707 2n3019 2N3019 |
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First line: ic str 6707 book, halfpage M3D111 Abstract: .. 2N3019 NPN medium power transistor book, halfpage M3D111 M3D111 1997 Jun 19 2 Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES • High current max .. Tags: ic str 6707 2n3019 M3D111 |
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First line: 2N3700UB 2n3700ub* Lake Street, Lawrence, 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Clare, Ireland Tel: +353 6840044 Fax: +353 6822298 POWER SILICON TRANSISTOR Qualified MIL-PRF-19500/391 Abstract: .. 2N3019 2N3057A 2N3057A 2N3700 2N3700 JAN. 2N3019S 2N3700UB 2N3700UB JANTX. JANTXV. JANS. ABSOLUTE MAXIMUM RATINGS TC = +25 C unless otherwise noted Parameters / Test Conditions Symbol Value Unit. Collector-Emitter .. Tags: 2n3700ub* 2N3700UB datasheet abstract.. |
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First line: 2N328A BCY34 Discrete Devices Transistors (Cont.) Medium Current, High-Speed Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat)<s>lc/lB tOFF Min/Max Volts mA/mA 2N721A 20/45 150/15 TO-18 2N722A PIMP 30/90 150/15 TO-18 2N1132A 30/90 15 Abstract: .. BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 2N930 NPN TO-18 TO-18 BC109C BC109C 2N3117 2N3117 NPN TO-18 TO-18 BC140 BC140 2N3019 NPN TO-39 TO-39 BC140-6 BC140-6 2N3019 NPN TO-39 TO-39 BC140-10 BC140-10 2N3019 NPN TO-39 TO-39 BC140-16 BC140-16 2N3019 NPN TO-39 TO-39 BC141 BC141 2N3019 NPN TO-39 TO-39 .. Tags: BCY34 2N328A datasheet abstract.. |
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First line: BC177 pnp transistor 2N328A BCY34 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 2N930 NPN TO-18 TO-18 BC109C BC109C 2N3117 2N3117 NPN TO-18 TO-18 BC140 BC140 2N3019 NPN TO-39 TO-39 BC140-6 BC140-6 2N3019 NPN TO-39 TO-39 BC140-10 BC140-10 2N3019 NPN TO-39 TO-39 BC140-16 BC140-16 2N3019 NPN TO-39 TO-39 BC141 BC141 2N3019 NPN TO-39 TO-39 .. Tags: BCY34 2N328A BC177 pnp transistor datasheet abstract.. |
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First line: 2N3019 motorola Order this document 2N3019/D Abstract: .. Rating Symbol 2N3019 2N3700 2N3700 Unit. Collector ‐ Emitter Voltage VCEO 80 80 Vdc. Collector ‐ Base Voltage VCBO 140 140 Vdc. Emitter ‐ Base Voltage VEBO 7.0 7.0 Vdc. Collector Current — Continuous IC 1.0 .. Tags: ic 10 209 2N3019 MOTOROLA 2N3019 1/IC 914 2N3019 |
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First line: 2n3019 equivalent TO39 package 2N3019 MECHANICAL DATA Dimensions (inches) 8.89 (0.35) 9.40 (0.37) Abstract: .. Document Number 3064 Issue 1. 2N3019. Semelab plc. Telephone +44 0 1455 556565. Fax +44 0 1455 .. 2N3019. Semelab plc. Telephone +44 0 1455 556565. Fax +44 0 1455 552612. E-mail: sales .. Tags: TO39 package 2n3019 equivalent 2n3019 2N3019 |
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First line: 2N2646 2N3638 2N3731 2N2706 2N4148 DIGITRON ELECTRONIC CORP OODGDDS Page DIQITRON ELECTRONIC" Hillside Avenue Springfield, Jersey 07081 201-379-9016 201-379-9019 201-467-8065 JOHN SCHWARTZ ENGINEERING Abstract: .. 2N4032 2N4032 2N4146 2N4146 2N4416 2N4416 2N2604 2N2604 2N3008 2N3008 2N3741 2N3741 2N4033 2N4033 2N4147 2N4147 2N4416A 2N4416A 2N2605 2N2605 2N3019 2N3741A 2N3741A 2N4 0 34 2N4148 2N4148 2N4898 2N4898 2N2631 2N2631 2N3020 2N3020 2N3766 2N3766 2N4035 2N4035 2N4149 2N4149 2N4899 2N4899 2N2639 2N2639 2N3053 2N3053 2N3767 2N3767 2N4 0 3 6 2N4212 2N4212 2N4900 2N4900 .. Tags: 2N4148 2N2706 2N3731 2N3638 2N2646 datasheet abstract.. |
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First line: mpsa06 2N6717 NSDU07 bflE fc,SD113D ODBTSIS NSC5 General Purpose Amplifiers Switches NATL SEHICOND (DISCRETE) (Volts) Devices (mA) hre@!c (dB) Package (Amb) (mW) (MHz) 2N6553 1000 T0-202(55) 1333 2N6718 2N6730 1000 T0-237(91) NSDU07 1000 T0-202(55) 2000 2N3019 1000 TO-39 Abstract: .. 50 250 250 50 200 T0-237 T0-237 91 850 NSDU07 NSDU07 1000 50 250 50 200 T0-202 T0-202 55 2000 80 2N3019 1000 100 300 150 100 50 TO-39 TO-39 800 2N3700 2N3700 1000 100 300 150 80 1.0 TO-18 TO-18 500 2N6707 2N6707 1000 40 250 250 50 200 T0-237 T0-237 90 850 .. Tags: NSDU07 2N6717 mpsa06 datasheet abstract.. |
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First line: DN3904 NPN/2N3904* 2n3904 TRANSISTOR PNP 2N2359* transistor 2N2359A FAIRCHILD TRANSISTORS SMALL SIGNAL TRANSISTOR DICE APPLICATION) Basic VcEO 'CBO Chip DEVICE Standard Size Basic Item Pol. Device Min/Max Mils Application DN2484 2N2484 250/- 17.5x17.5 Level, Noise Amp. DN3962 2N3962 100/450 11x24 Le Abstract: .. and Switch 8 DN3019 DN3019 NPN 2N3019 80 20 90 100/300 100 30x30 30x30 G. P. Amp. and Switch 9 DN4033 DN4033 PNP 2N4033 2N4033 80 50 60 100/300 100 24x30 24x30 G. P. Amp. and Switch 10 DN3930 DN3930 PNP 2N3930 2N3930 180 20 100 80/300 10 22x22 22x22 HighVoltageAmp .. Tags: transistor 2N2359A 2N2359* 2n3904 TRANSISTOR PNP NPN/2N3904* DN3904 datasheet abstract.. |
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First line: 2N3019 Description Semicoa Semiconductors offers: Screening processing MIL-PRF-19500 Appendix level (2N3019J) JANTX level (2N3019JX) JANTXV level (2N3019JV) JANS level (2N3019JS) applicable level 100% visual inspection MIL-STD-750 method 2072 JANTXV JANS Radiation testing (total dose) upon request Abstract: .. 2N3019 Silicon NPN Transistor. D a t a S h e e t. Description. Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 MIL-PRF-19500 Appendix E. • JAN level 2N3019J • JANTX level 2N3019JX .. Tags: transistor PT 4500 2N3019 2N3019 2N3019J 2N3019JX 2N3019JV 2N3019JS |
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First line: 2N3019 MECHANICAL DATA Dimensions (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Abstract: .. 2N3019. Semelab plc. Telephone +44 0 1455 556565. Fax +44 0 1455 552612. E-mail: sales .. 2N3019. Semelab plc. Telephone +44 0 1455 556565. Fax +44 0 1455 552612. E-mail: sales .. Tags: 2n3019 2N3019 |
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First line: SILICON PLANAR 2N3019 3020 HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS 3019 3CI20 silicon planar epitaxial transistors Jedec TO-39 metal case, designed high-current, high-frequency amplifier applications. They feature high gain saturation voltages. VcBO Collector-base voltage VcEO Collector-emitter volt Abstract: .. SILICON PLANAR NPN 2N3019 2N 3020 HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3CI20 3CI20 are silicon planar epitaxial NPN transistors in Jedec TO-39 TO-39 metal case, designed for high-current .. Tags: datasheet abstract.. |
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First line: 2N2219 MOTOROLA BC17* BT2222 2N328A BCY34 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 2N930 NPN TO-18 TO-18 BC109C BC109C 2N3117 2N3117 NPN TO-18 TO-18 BC140 BC140 2N3019 NPN TO-39 TO-39 BC140-6 BC140-6 2N3019 NPN TO-39 TO-39 BC140-10 BC140-10 2N3019 NPN TO-39 TO-39 BC140-16 BC140-16 2N3019 NPN TO-39 TO-39 BC141 BC141 2N3019 NPN TO-39 TO-39 .. Tags: BCY34 2N328A BT2222 BC17* 2N2219 MOTOROLA datasheet abstract.. |
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First line: pnp for 2n3019 BC140 equivalent to-92* BFY50 equivalent bc368 equivalent Small-signal Transistors LEADED DEVICES (continued) GENERAL PURPOSE MEDIUM-POWER TRANSISTORS TYPE NUMBER 2N1613 2N1711 2N1893 2N3019 BC140 BC140-10 BC140-16 BC141 BC141-10 BC141-16 BC368 BC368-16 BC368-25 BC635 BC635-10 BC635- Abstract: .. 2N3019 TO-39 TO-39 80 1000 800 100 300 100 ‐ ‐ 146. BC140 BC140 TO-39 TO-39 40 1000 3700 63 250 50 ‐ BC160 BC160 225. BC140-10 BC140-10 TO-39 TO-39 40 1000 3700 63 160 50 ‐ BC160-10 BC160-10 225. BC140-16 BC140-16 TO-39 TO-39 40 1000 3700 100 250 50 ‐ BC160-16 BC160-16 225. BC141 BC141 TO .. Tags: BFY50 equivalent to-92Â* BC140 equivalent to-39 transistors to-39 TO 39 pnp for 2n3019 BSX46-16 BSX45-16 BC640-16 BC639-16 BC638-10 BC636-10 bc368 equivalent 2N1613 2N1711 2N1893 2N3019 |
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First line: 662 marking Micro International, LDT3019 LDT3019T Abstract: .. The LDT3019 LDT3019 and LDT3019T LDT3019T meet the general specifications of the 2N3019 transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized .. Tags: 662 marking 2N3019 LDT3019 LDT3019T |
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First line: Data Sheet 2N3019S Type 2N3019S Geometry 4500 Polarity Qual Level: JANS Features: General-purpose transistor switching amplifier applicatons. Housed TO-39 case. Also available chip form using 4500 chip geometry. limits shown MIL-PRF-19500/391 which Semicoa meets cases. Radiation Graphs available. Abstract: .. 2N3019. REF: MIL-PRF-19500 MIL-PRF-19500 /391. Features: • General-purpose transistor for switching and .. Tags: 2n3019 2N3019S |
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First line: 2N1921 N2907* 2N3064 N2907A* N2907 DIODE TRANSISTOR 5flMfl35g DODOmO l^t^^rjs^sj (201) 666-0400 Telex: 139-385 Outside area call TOLL FREE 800-526-4581 201-575-6863 SILICON POWER TRANSISTORS DEVICES DEVICES DEVICES Abstract: .. 100/300 150 1.6 500/50 250 225 2N2219A 2N2219A 800 40 100/300 150 1 500/50 250 225 2N3019 800 80 100/300 150 0.5 500/50 100 TYP 2N3020 2N3020 800 80 40/120 150 0.5 500/50 80 TYP 2N3053 2N3053 800 40 50/250 150 1.4 150/15 100 .. Tags: N2907 N2907A* 2N3064 N2907* 2N1921 datasheet abstract.. |
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First line: bcy59 motorola bc140 BC109 MOTOROLA METAL SMALL-SIGNAL TRANSISTORS (continued) General-Purpose Amplifiers These transistors designed amplifier applications, general-purpose switching applications, complementary circuitry. Devices listed decreasing order V(br)CEO within each package group. V(BR)CEO D Abstract: .. Exists in -6, -10, -16 HFE groups 2N1711 2N1711 80 70 50 100 300 150 Exists under CECC 2N3019# 80 100 50 1000 100 300 150 BSX46 BSX46 60 50 50 1000 40 250 100 Exists in -6, -10, -16 HFE groups BC141 BC141 60 50 50 1000 40 400 100 .. Tags: BC109 MOTOROLA bc140 bcy59 motorola datasheet abstract.. |
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First line: 2N3019 SILICON PLANAR 3020 HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS 3019 3020 silicon planar epitaxial transistors Jedec TO-39 metal case, designed high-current, high-frequency amplifier applications. They feature high gain saturation voltages. VcBO Collector-base voltage VcEO Collector-emitter volta Abstract: .. 2N3019 SILICON PLANAR NPN 2M 3020 HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 TO-39 metal case, designed for high-current .. Tags: datasheet abstract.. |
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First line: 2N3053 transistor 2N3053 transistor 2n3053 transistor 2n3053 Boca Semiconductor Corp. Rating Symbol 2IM3053 2N3053A Unit Collector-Emitter Voltage(1) vCEO Collector-Base Voltage VCBO Emitter-Base Voltage Collector Current Continuous mAdc Abstract: .. , STYLE 1 TO-39 TO-39 TQ-205AD TQ-205AD GENERAL PURPOSE TRANSISTORS NPN SILICON Refer to 2N3019 for graphs. ELECTRICAL CHARACTERISTICS |TA = 25Â C unless otherwise noted. Characteristic Symbol Min Max .. Tags: transistor 2n3053 transistor 2n3053 2N3053 2N3053 transistor datasheet abstract.. |
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First line: 2N3700 DIE Dose 2N3700 documentation process conversion measures necessary comply with this document shall completed November 2010. INCH-POUND MIL-PRF-19500/391M September 2010 SUPERSEDING MIL-PRF-19500/391L January 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, Abstract: .. SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A 2N3057A , 2N3700 2N3700 , AND 2N3700UB 2N3700UB , JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG .. Tags: Dose 2N3700 2N3700 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB |
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First line: SFT3019 SERIES VOLTS HIGH SPEED TRANSISTOR Abstract: .. • Replaces 2N3019 type • TX, TXV, and S Level Available. Available Part Numbers: SFT3019-4 SFT3019-4 SFT3019 SFT3019 /18. o C Operating and Storage Temperature TJ, TSTG -65 to +175. LCC-4 -4 TO-18 TO-18 /18 14830 Valley .. Tags: ssdi 2n3019 2N3019 SFT3019 |
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First line: AMER PHILIPS/DISCRETE bbS3131 GQlbna T-2.7-0J Small Signal Devices GENERAL PURPOSE SWITCHING TRANSISTORS TYPES TYPE v"-." (typ) r=;"" (n>A) CmA) (MHz) (mA) 2N1613 TO-39 Abstract: .. 40 120 10 500 10 2N2483 2N2483 TO-18 TO-18 60 50 40 120 .01 60 .5 2N2484 2N2484 TO-18 TO-18 60 50 100 500 .01 60 .5 2N3019 TO-39 TO-39 80 1000 100 300 150 100 50 2N3020 2N3020 TO-39 TO-39 80 1000 40 120 150 80 50 2N3053 2N3053 TO-39 TO-39 40 700 50 250 150 100 50 2N3903 2N3903 .. Tags: datasheet abstract.. |
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First line: smd c2f transistor SMD 2n3904 transistor smd 2N4403 2N3640 2n4401 smd CENTRAL SEMICONDUCTOR Central semiconductor corp. Adams Avenue Hauppauge, York llflTita DDQD43D SURFACE MOUNTED DEVICES TRANS SOT-23, SOT-89 Abstract: .. 150 200 CXT2907A CXT2907A 2N2907A 2N2907A CXT3019 CXT3019 NPN HIGH CURRENT 80 1000 100 300 150 100 CXT3019 CXT3019 2N3019 CXT390A CXT390A NPN AMPL/SWITCH 40 200 100 300 10 300 CXT3904 CXT3904 2N3904 2N3904 CXT3906 CXT3906 PNP AMPL/SWITCH ko 200 100 300 20 250 CXT3906 CXT3906 .. Tags: 2n4401 smd 2N3640 transistor smd 2N4403 transistor SMD 2n3904 smd c2f datasheet abstract.. |
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First line: Transistors (Cont.) Discrete Devices General Purpose Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE<Sat)@lc/lB Min/Max Volts mA/mA 2N2897 50/200 500/50 TO-18 2N2898 40/120 500/50 T046 2N2899 60/200 500/50 Abstract: .. 150 0.5 500/50 120 15 TO 46 2N2900 2N2900 NPN 500 60 45 7 50/200 150 0.5 500/50 100 15 T046 T046 2N3019 NPN 800 140 80 7 100/300 150 0.2 150/15 100 12 TO-39 TO-39 2N3020 2N3020 NPN 800 140 80 7 40/120 150 0.2 150/15 100 12 TO-39 TO-39 2N3036 2N3036 .. Tags: datasheet abstract.. |
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First line: 2N2243 2N2440 TO-39 Metal-Can Transistors (NPN) Electrical Characteristics Unless Otherwise Specified) Type VCBO ^CEO ^EBO 'cm 'cBO 'ces Freq (UA) 0(V) (MA) (mA) (pF) (MHz) (mA) (ns) (dB) (MHz) 2N2243 0.01 0.35 Abstract: .. 10 0.001 30 1 10 2N2440 2N2440 120 80 7 0.8 0.5 0.001 90 35 0.1 10 0.4 0.9 50 15 100 300 150 10 3 1.3 150 2N3019 140 80 7 0.8 1 0.01 90 50 0.1 10 0.2 1.1 150 12 100 400 50 4 0.001 90 10 10 0.5 500 100 300 150 10 50 500 10 15 1 10 .. Tags: 2N2440 2N2243 datasheet abstract.. |
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