NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N2907ADIE | Microsemi Corporation | SWITCHING TRANSISTOR PNP SILICON |
2 pages, |
Original |  |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PROCESS CP591V CP591V Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Ă... Back Side Metalization Au - 18,000Ă... GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2905A 2N2907A CMPT2907A CMPT2907A CMST2907A CMST2907A ... | Original |
2 pages, |
PN2907A 2N2905a equivalent 2N2907A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A ELECTRONIC TRANSISTOR CORP 2n2905a CHIP TRANSISTOR 2N2907A die CP591V abstract |
|
|||
| Abstract: PROCESS CP591X CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Ă... Back Side Metalization Au - 18,000Ă... GEOMETRY GROSS DIE PER 5 INCH WAFER 45,900 PRINCIPAL DEVICE TYPES 2N2905A 2N2905A 2N2907A CMPT2907A CMPT2907A CMST2907A CMST2907A CXT2907A CXT2907A CZT2907A CZT2907A PN2907A PN2907A BACKSIDE ... | Original |
2 pages, |
PN2907A CZT2907A CXT2907A CMST2907A CMPT2907A 2N2905A 2N2907A CP591X CP591X abstract |
|
|||
| Abstract: PROCESS CP591V CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Ă... Back Side Metalization Au - 18,000Ă... GEOMETRY GROSS DIE PER 4 INCH WAFER 30,475 PRINCIPAL DEVICE TYPES 2N2905A 2N2905A 2N2907A CMPT2907A CMPT2907A CMST2907A CMST2907A CXT2907A CXT2907A CZT2907A CZT2907A PN2907A PN2907A BACKSIDE ... | Original |
2 pages, |
equivalent 2N2907A CZT2907A CXT2907A CP591V CMST2907A CMPT2907A 2N2905A PN2907A 2N2907A CP591V abstract |
|
|||
| Abstract: PROCESS CP591V CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Ă... Back Side Metalization Au - 18,000Ă... GEOMETRY GROSS DIE PER 4 INCH WAFER 30,475 PRINCIPAL DEVICE TYPES 2N2905A 2N2905A 2N2907A CMPT2907A CMPT2907A CMST2907A CMST2907A CXT2907A CXT2907A CZT2907A CZT2907A PN2907A PN2907A BACKSIDE ... | Original |
2 pages, |
PN2907A equivalent 2N2907A CZT2907A CXT2907A CP591V CMST2907A CMPT2907A 2N2907A 2N2905A CP591V abstract |
|
|||
| Abstract: PROCESS CP591 CP591 Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Ă... Back Side Metalization Au - 18,000Ă... GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2905A 2N2907A CMPT2907A CMPT2907A CMST2907A CMST2907A ... | Original |
2 pages, |
PN2907A CZT2907A CXT2907A CP591 CMST2907A CMPT2907A 2N2907A 2N2905A CP591 abstract |
|
|||
| Abstract: Data Sheet No. 2C2907A 2C2907A Generic Packaged Parts: Chip Type 2C2907A 2C2907A Geometry 0600 Polarity PNP 2N2905 2N2905, 2N2905A 2N2905A, 2N2907 2N2907, 2N2907A Chip type 2C2907A 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. 2N2905 2N2905, 2N2905A 2N2905A, 2N2905AL 2N2905AL, 2N2907 2N2907, 2N2907A, 2N2907AUB 2N2907AUB, SD2907A SD2907A , Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base Die Thickness ... | Original |
1 pages, |
transistor 2N2905 2N2905 2N2905 transistor 2N2905A 2N2905a equivalent 2N2905AL 2N2907 2N2907 chip 2C2907A 2N2907AUB equivalent 2N2907A SD2907A SD2907AF SQ2907A 2C2907A abstract |
|
|||
| Abstract: surface-mount device, consisting of two 2N2907A silicon PNP transistor die. The HCT740 HCT740 electrical characteristics are similar to the MIL-S-19500/291 MIL-S-19500/291 specification for the 2N2907A. The miniature six pin ceramic , board area required • Electrical performance similar to 2N2907A • Hermetically sealed • Screened per , (0 71) .022 (0 56) 093 (2.19) .082 (2 08) 055 (! 10) 015 (I 11) 2N2907A COLLECTOR 2N2907A ... | OCR Scan |
2 pages, |
HCT740 2N5796 2N2907A 2N2907A surface mount equivalent 2N2907A HCT740 abstract |
|
|||
| Abstract: surface-mount device, consisting of two 2N2907A silicon PNP transistor die. The HCT740 HCT740 electrical characteristics are similar to the MIL-S-19500/291 MIL-S-19500/291 specification for the 2N2907A. The miniature six pin ceramic , ) .066 (1.68) .096 (2:49) .082 (2.08) .045 (1.14) 2N2907A COLLECTOR 2N2907A COLLECTOR .105 (2.67 , board area required • Electrical performance similar to 2N2907A • Hermetically sealed • Screened per ... | OCR Scan |
2 pages, |
HCT740 equivalent for 2N2907A PNp Transistor 2N5796 2N2907A HCT740 abstract |
|
|||
| Abstract: PN2907A PN2907A / 2N2907A PN2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors , ) PN2907A PN2907A / 2N2907A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open - VCB0 60 V , at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm , ://www.diotec.com/ 1 PN2907A PN2907A / 2N2907A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. , distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf ... | Original |
2 pages, |
TO-92 Gehause PN2907A PN2222A 2N2907A 2n2222a to 92 2N2222A 10D3 PN2907A abstract |
|
|||
| Abstract: ceramic or printed circuit board • Electrical performance similar to a 2N2907A • Hermetically sealed , pad, hermetically sealed, ceramic surface-mount transistor array, consisting of a 2N2907A silicon PNP transistor die. The HCT790 HCT790 electrical characteristics are similar to the MIL-S-19500/291 MIL-S-19500/291 specification for the 2N2907A. Absolute Maximum Ratings (Ta = 25°C unless otherwise noted) Collector-Base Voltage ... | OCR Scan |
2 pages, |
HCT790 2N6987 2N2907A HCT790 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| Search Criteria: Package = DIE, PartType = PNP Transistor Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N2907A DIE SER PNP DIE DIE 0.4 0.6 60 60 5 www.datasheetarchive.com/files/microsemi/products/pnp/die.htm |
Microsemi | 30/12/1998 | 2.08 Kb | HTM | die.htm |
| Search Criteria: Package = DIE, PartType = PNP Transistor PartNo Data Sheet Pack Power (W) I C (A) B V(CBO) (V) V CEO (V) BV EBO (V) 2N2907A DIE DIE DIE 0.4 0.6 60 60 5 www.datasheetarchive.com/files/microsemi/products/pnp/die-v1.htm |
Microsemi | 07/12/1999 | 3.52 Kb | HTM | die-v1.htm |
| 2N2907A DIE PartID: 24878 | Rev: 1/4/99 Datasheet | Sertech Labs Package: DIE (Die) PNP Transistor 0.4 Watts 0.6 Amps Maximum Ratings and Electrical www.datasheetarchive.com/files/microsemi/products/24878.htm |
Microsemi | 04/01/1999 | 5.97 Kb | HTM | 24878.htm |
| .36 0.2 12 12 4.5 HS3013 HS3013 HS3013 HS3013 SER PNP HSOT SM 0.36 0.2 40 40 5 HS2907A HS2907A HS2907A HS2907A SER PNP HSOT SM 0.4 0.6 60 60 3 2N2907A DIE SER PNP DIE DIE 0.4 0.6 60 60 5 HS5087 HS5087 HS5087 HS5087 SER PNP HSOT SM 0.5 0.05 50 50 3 HS3906 HS3906 HS3906 HS3906 SER PNP HSOT SM www.datasheetarchive.com/files/microsemi/products/pnp/ser.htm |
Microsemi | 23/12/1998 | 7.4 Kb | HTM | ser.htm |
| .36 0.2 12 12 4.5 HS3013 HS3013 HS3013 HS3013 SER PNP HSOT SM 0.36 0.2 40 40 5 HS2907A HS2907A HS2907A HS2907A SER PNP HSOT SM 0.4 0.6 60 60 3 2N2907A DIE SER PNP DIE DIE 0.4 0.6 60 60 5 HS5087 HS5087 HS5087 HS5087 SER PNP HSOT SM 0.5 0.05 50 50 3 HS3906 HS3906 HS3906 HS3906 SER PNP HSOT SM www.datasheetarchive.com/files/microsemi/products/pnp/pnp_ser.htm |
Microsemi | 04/01/1999 | 7.33 Kb | HTM | pnp_ser.htm |
| 2N2907A DIE (#24878) PNP Transistor Division Watertown Datasheet MSC0948 MSC0948 MSC0948 MSC0948.PDF Mil-Spec (none) Prod-Class (none) Shipping (none) Qual Data (none DIE(DIE) Pricing Contact Division www.datasheetarchive.com/files/microsemi/products/24878-v1.htm |
Microsemi | 08/12/1999 | 9.01 Kb | HTM | 24878-v1.htm |
| Watertown PNP Transistor 2N2907A PPC Inc. PNP Transistor 2N2907A Watertown PNP Transistor JAN 2N2907A Watertown PNP Transistor JANTX 2N2907A Watertown PNP Transistor JANTXV 2N2907A Watertown PNP Transistor 2N2907A DIE Watertown PNP Transistor 2N2919 2N2919 2N2919 2N2919 Watertown www.datasheetarchive.com/files/microsemi/products/partno/2n29.htm |
Microsemi | 03/12/1999 | 29.1 Kb | HTM | 2n29.htm |
| 5 2N2907A DIE DIE DIE 0.4 0.6 60 60 5 -78 STD 0.3 0.6 60 60 5 2N2907A TO-18 STD 1.8 0 5 2N2907A TO-18 STD 0.4 0.6 60 60 5 2N2905 2N2905 2N2905 2N2905 40 5 2N2905 2N2905 2N2905 2N2905 JANTXV TO-39 STD 0.6 0.6 60 40 5 2N2907A JAN TO-18 STD 0.4 0.6 60 60 5 2N2907A JANTX TO-18 STD www.datasheetarchive.com/files/microsemi/products/pnp/59_0.6-v1.htm |
Microsemi | 07/12/1999 | 34.7 Kb | HTM | 59_0.6-v1.htm |
| .03 70 60 6 2N2907 2N2907 2N2907 2N2907 TO-18 STD 0.4 0.6 60 60 5 2N2907A TO-18 STD 0.4 0.6 60 60 5 2N2907A DIE DIE DIE .03 70 60 6 2N2907A JAN TO-18 STD 0.4 0.6 60 60 5 2N STD 0.4 0.03 70 60 6 2N2907A JANTXV TO-18 STD 0.4 0.6 60 60 6 2N2605 2N2605 2N2605 2N2605 JANTX TO-46 STD 0.4 0.03 70 60 6 2N2907 www.datasheetarchive.com/files/microsemi/products/pnp/27_0.4-v1.htm |
Microsemi | 07/12/1999 | 31.23 Kb | HTM | 27_0.4-v1.htm |
| TO-18 STD 0.4 0.6 60 60 5 JAN 2N2907A WT PNP TO-18 STD 0.4 0.6 60 60 5 JANTX 2N2907A WT PNP TO-18 STD 0.4 0.6 60 60 5 JANTXV 2N2907A WT PNP TO-18 STD 0.4 0.6 60 60 5 2N2907A WT PNP TO-18 STD 0.4 0.6 60 60 5 2N2907A DIE SER PNP DIE DIE 0.4 0.6 60 60 5 www.datasheetarchive.com/files/microsemi/products/pnp/27_0.4.htm |
Microsemi | 04/01/1999 | 19.69 Kb | HTM | 27_0.4.htm |