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2N2907A die Datasheet

Part Manufacturer Description PDF Type
2N2907ADIE Microsemi SWITCHING TRANSISTOR PNP SILICON Original

2N2907A die

Catalog Datasheet MFG & Type PDF Document Tags

2N906A

Abstract: transistor equivalent 0107 NA , TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA , , TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, * Comments , N/A N/A 2N2906A, L, 2N2907A, L 2N2906AUA, 2N2907AUA 2N2906AUB, 2N2907AUB 2N2906AUBC , Max hFE2 IC = 1.0 mA dc 2N2906A, 2N2907A, 2N2906A L, UA,UB, L, UA,UB, , L, UA,UB, UBC UBC UBC 40 75 40 175 Types Limit hFE at VCE = 10 V dc hFE3 IC = 10 mA dc 2N2907A L, UA
DEPARTMENT OF DEFENSE
Original
2N2907AUBC JANHCB2N2907A 2N906A transistor equivalent 0107 NA 2N906 2N2907A die UBC-100 MIL-PRF-19500/291R MIL-PRF-19500 JANHCB2N2906A JANHCD2N2906A
Abstract: , SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB , ) (4) PT PT PT TA = +25°C (1) (2) W 2N2906A, L, 2N2907A, L 2N2906AUA, 2N2907AUA , hFE5 (1) IC = 500 mA dc 2N2906A, 2N2907A, 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A L, L, UA,UB, L, UA,UB, , L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB , 100 40 50 Max 175 450 120 300 Types 2N2906A, 2N2907A, L, UA, UB, UBC, UBN, UBCN Microsemi
Original
MIL-PRF-19500/291U MIL-PRF-19500/291T 2N2906AUBN 2N2906AUBCN 2N2907AUBN 2N2907AUBCN

JANHCB2N2907A

Abstract: JANHCD2N2907A , SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA 2N2907AUA, 2N2906AUB, AND 2N2907AUB JAN , W mA dc V dc V dc V dc °C/W °C 2N2906A, L, 2N2907A, L 0.5 (1) 600 60 , kÅ nominal. C. Eutectic Die Mount - No Metal SI3N4 2kÅ minimum, 2.2k nominal Collector B = 4.2 x 4.2 mils, E = 4.2 x 4.2 mils * FIGURE 4. JANHC and JANKC (B-version) die dimensions. 5 MIL-PRF-19500/291K E B Die size: Die thickness: Base pad: Emitter pad: Back metal Top metal
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Original
JANHCD2N2907A 215 e3 2N2906A-2N2907A JANTXV 2N2907AUB 2N2907A surface mount transistor 2N2906 MIL-PRF-19500/291J T0-18
Abstract: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors , = 25°C) PN2907A / 2N2907A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open - , temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse , ://www.diotec.com/ 1 PN2907A / 2N2907A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ , % Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Diotec
Original
UL94V-0 PN2222A 2N2222A
Abstract: , SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC , /A 2N2906A, L, 2N2907A, L 2N2906AUA, 2N2907AUA 2N2906AUB, 2N2907AUB 2N2906AUBC , hFE1 IC = 0.1 mA dc Min Max hFE2 IC = 1.0 mA dc 2N2906A, 2N2907A, 2N2906A L, UA,UB, L, UA , 10 mA dc 2N2907A L, UA,UB, UBC 100 450 2N2906A L, UA,UB, UBC 40 |hfe| f = 100 MHz VCE = 20 V dc, IC = 20 mA dc hFE4 (1) IC = 150 mA dc 2N2907A L, UA,UB, UBC 100 2N2906A DEPARTMENT OF DEFENSE
Original
MIL-PRF-19500/291P

PN2907A

Abstract: 2N2907A PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors , °C) PN2907A / 2N2907A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open - VCB0 60 V , at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm , ://www.diotec.com/ 1 PN2907A / 2N2907A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ , distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf
Diotec
Original
10D3 2N2907A plastic TO-92 Gehause 2n2222a to 92

equivalent 2N2907A

Abstract: equivalent for 2N2907A PNp Transistor sealed, ceramic surface-mount device, consisting of two 2N2907A silicon PNP transistor die. The HCT740 electrical characteristics are similar to the MIL-S-19500/291 specification for the 2N2907A. The miniature , ) .0B0 (2.03) .066 (1.68) .096 (2:49) .082 (2.08) .045 (1.14) 2N2907A COLLECTOR 2N2907A COLLECTOR , circuit board area required â'¢ Electrical performance similar to 2N2907A â'¢ Hermetically sealed â
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OCR Scan
2N5796 equivalent 2N2907A equivalent for 2N2907A PNp Transistor equivalent transistor 2N2907a MIL-S-19500 MIL-S-19500/496 HCT740TX HCT740TXV 500VDC

equivalent 2N2907A

Abstract: 2N2907A surface mount sealed, ceramic surface-mount device, consisting of two 2N2907A silicon PNP transistor die. The HCT740 electrical characteristics are similar to the MIL-S-19500/291 specification for the 2N2907A. The miniature , circuit board area required â'¢ Electrical performance similar to 2N2907A â'¢ Hermetically sealed â , ) .028 (0 71) .022 (0 56) 093 (2.19) .082 (2 08) 055 (! 10) 015 (I 11) 2N2907A COLLECTOR 2N2907A
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OCR Scan
100MH

2N2907A die

Abstract: 2N2907 chip Data Sheet No. 2C2907A Generic Packaged Parts: Chip Type 2C2907A Geometry 0600 Polarity PNP 2N2905, 2N2905A, 2N2907, 2N2907A Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. 2N2905, 2N2905A, 2N2905AL, 2N2907, 2N2907A, 2N2907AUB, SD2907A , Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base Die Thickness
Semicoa Semiconductors
Original
SD2907AF SQ2907A 2N2907 chip PNP 2N2907 chip type geometry 2n2907 or similar PNP 2N2907A SEMICOA 2N2907 semicoa SQ2907AF 2N3486 2N3486A 2N6987

2N2907A

Abstract: 2N6987 ceramic or printed circuit board â'¢ Electrical performance similar to a 2N2907A â'¢ Hermetically sealed , 20 pad, hermetically sealed, ceramic surface-mount transistor array, consisting of a 2N2907A silicon PNP transistor die. The HCT790 electrical characteristics are similar to the MIL-S-19500/291 specification for the 2N2907A. Absolute Maximum Ratings (Ta = 25°C unless otherwise noted) Collector-Base
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OCR Scan
MIL-S-19500TX

2N2907ADIE

Abstract: MICROSEMI 2N2907A 2N2907ADIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n ELECTRICAL , INFORMATION: PART #: 2N2907A_ _ - _ First Suffix Letter: Packaging Option Second Suffix Letter: Processing , product design, specification, or other information at any time without prior notice. Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98 MSC0948.PDF 1 Electrical Characteristics @ Tj = 25 ° C Symbol
Sertech Labs
Original
MICROSEMI 2N2907A ST 2n2907a die 10VDC MIL-PRF-19500/291
Abstract: , consisting of two 2N2907A silicon PN P transistor die. The HCT740 electrical characteristics are similar to the MIL-S-19500/291 specification for the 2N2907A. The miniature six pin ceramic package is ideal for , 0 . OPTEK Product Bulletin HCT740 May 1993 Surface Mount Dual PNP Transistor Type HCT740 Features · Surface mountable on ceramic or printed circuit board · Miniature package to minimize circuit board area required · Electrical performance similar to 2N2907A · Hermetically sealed · Screened per -
OCR Scan
Abstract: sealed, ceramic surface-mount transistor array, consisting of a 2N2907A silicon PNP transistor die. The HCT790 electrical characteristics are similar to the MIL-S-19500/291 specification for the 2N2907A. TX , circuit board · Electrical performance similar to a 2N2907A · Hermetically sealed package · Screened per -
OCR Scan
MIL-S-19500/558 HCT790TX HCT790TXV

12N2907A

Abstract: 2N2907AJ 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose · Low power · PNP silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N2907AJ) · JANTX level (2N2907AJX) · JANTXV level (2N2907AJV) · JANS level (2N2907AJS) · QCI to the applicable level · 100% die visual inspection per , of 1 2N2907A Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics
Semicoa Semiconductors
Original
12N2907A MIL-STD-750

2N2907A die

Abstract: CHIP TRANSISTOR PROCESS CP591V Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A
Central Semiconductor
Original
CXT2907A CZT2907A CHIP TRANSISTOR 2N2905a equivalent ELECTRONIC TRANSISTOR CORP

2N2907A die

Abstract: PROCESS Small Signal Transistor CP591V PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE COLLECTOR R1 EPITAXIAL PLANAR 19 x 19 MILS 7.1 MILS 3.5 x 4.3 MILS 3.5 x 4.5 MILS Al - 30,000Å Au - 18,000Å 145 Adams Avenue Hauppauge, NY 11788 USA
Central Semiconductor
Original

2N2905A

Abstract: 2N2907A PROCESS CP591 Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A
Central Semiconductor
Original

2N2907A

Abstract: 2N2905A PROCESS CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 45,900 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE
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Original
Abstract: 2N2907A Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N2907AJ) · JANTX level (2N2907AJX) · JANTXV level (2N2907AJV) · JANS level (2N2907AJS) · JANSR level (2N2907AJSR) · JANSF level (2N2907AJSF) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and , 714.979.1900, FAX 714.557.4541 Page 1 of 1 www.SEMICOA.com 2N2907A Silicon PNP Transistor Data Sheet Semicoa Semiconductors
Original
150OC

2N2222A TO-92

Abstract: 2n2222a to 92 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features Epitaxial Planar Die Construction , changing of specification will not be informed individual Page 1 of 5 2N2907A PNP Silicon , Circuit Any changing of specification will not be informed individual Page 2 of 5 2N2907A PNP , Page 3 of 5 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor 10
SeCoS
Original
2N2222A TO-92 2N2907A TO-92 Transistor 2N2222A 1N916 270TYP 050TYP
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