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2N2907A+die Datasheet

Part Manufacturer Description PDF Type
2N2907ADIE Microsemi SWITCHING TRANSISTOR PNP SILICON Original

2N2907A+die

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: /10kÅ. B. Gold 2.5 kÅ minimum, 3.0 kÅ nominal. C. Eutectic Die Mount - No metal. SI3N4 2kÅ minimum , mm x 0.107 mm). FIGURE 5. JANHC and JANKC (B-version) die dimensions. 7 MIL-PRF-19500/291R w/AMENDMENT 2 E B 1. 2. 3. 4. 5. 6. 7. 8. Die size: Die thickness: Base pad , ±1,500 Å. FIGURE 6. JANHC and JANKC (D-version) die dimensions. 8 MIL-PRF-19500/291R w , 6 herein. Epoxy die attach may be used when a moisture monitor plan has been submitted and approved DEPARTMENT OF DEFENSE
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2N2906A 2N2906AL 2N2907A 2N2907AL 2N2906AUA 2N2907AUA 2N906A transistor equivalent 0107 NA 2N2907AUB UBC-100 2N906
Abstract: . B. Gold 2.5 kà minimum, 3.0 kà nominal. C. Eutectic Die Mount - No metal. SI3N4 2kà minimum , mm x 0.107 mm). FIGURE 4. JANHC and JANKC (B-version) die dimensions. 7 MIL-PRF-19500/291U E B 1. 2. 3. 4. 5. 6. 7. 8. Die size: Die thickness: Base pad: Emitter pad: Back , . FIGURE 5. JANHC and JANKC (D-version) die dimensions. 8 MIL-PRF-19500/291U 2. APPLICABLE DOCUMENTS , dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein. Epoxy die attach Microsemi
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MIL-PRF-19500/291T 2N2906AUB 2N2906AUBC 2N2907AUBC 2N2906AUBN 2N2906AUBCN
Abstract: kÅ nominal. C. Eutectic Die Mount - No Metal SI3N4 2kÅ minimum, 2.2k nominal Collector B = 4.2 x 4.2 mils, E = 4.2 x 4.2 mils * FIGURE 4. JANHC and JANKC (B-version) die dimensions. 5 MIL-PRF-19500/291K E B Die size: Die thickness: Base pad: Emitter pad: Back metal Top metal , JANKC (D-version) die dimensions. 6 MIL-PRF-19500/291K * 1.4 Primary electrical characteristics , in MIL-PRF-19500, and figures 1, 2, 3, 4, and 5 herein. Epoxy die attach may be used when a moisture -
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JANHCB2N2907A JANHCD2N2907A 215 e3 2N2907A die JANTXV 2N2907AUB JANHCB2N2906A MIL-PRF-19500/291J T0-18
Abstract: temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse , % Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Diotec
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PN2907A UL94V-0 PN2222A 2N2222A
Abstract: . Eutectic Die Mount - No metal. SI3N4 2kà minimum, 2.2k nominal. Collector. B = .0042 x .0042 inch , (B-version) die dimensions. 7 MIL-PRF-19500/291R E B 1. 2. 3. 4. 5. 6. 7. 8. Die size: Die thickness: Base pad: Emitter pad: Back metal Top metal: Back side: Glassivation , ) die dimensions. 8 MIL-PRF-19500/291R 2. APPLICABLE DOCUMENTS 2.1 General. The documents , 6 herein. Epoxy die attach may be used when a moisture monitor plan has been submitted and approved DEPARTMENT OF DEFENSE
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MIL-PRF-19500/291P JANHCD2N2906A
Abstract: at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm , distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Diotec
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10D3 2n2222a to 92 2N2907A plastic TO-92 Gehause
Abstract: sealed, ceramic surface-mount device, consisting of two 2N2907A silicon PNP transistor die. The HCT740 -
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2N5796 equivalent 2N2907A equivalent for 2N2907A PNp Transistor equivalent transistor 2N2907a 2N2907A surface mount MIL-S-19500 MIL-S-19500/291 MIL-S-19500/496 HCT740TX HCT740TXV
Abstract: Product Bulletin HCT740 May 1993 OPTEK Surface Mount Dual PNP Transistor Type HCT740 Features â'¢ Surface mountable on ceramic or printed circuit board â'¢ Miniature package to minimize circuit board area required â'¢ Electrical performance similar to 2N2907A â'¢ Hermetically sealed â'¢ Screened per MIL-S-19500 TX or TXV equivalent levels on request Description The HCT740 is a hermetically sealed, ceramic surface-mount device, consisting of two 2N2907A silicon PNP transistor die. The HCT740 -
OCR Scan
500VDC 100MH
Abstract: 2N2907ADIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS n LOW VCE(sat): .4V @ IC = 150 mAdc PHYSICAL DIMENSIONS , product design, specification, or other information at any time without prior notice. Data Sheet, Die Sertech Labs
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MSC0948 MICROSEMI 2N2907A ST 2n2907a die 10VDC
Abstract: Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base Die Thickness Semicoa Semiconductors
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2C2907A 2N2905 2N2905A 2N2907 2N2905AL SD2907A 2N2907 chip PNP 2N2907 2N2907A SEMICOA 2n2907 or similar PNP chip type geometry
Abstract: PNP transistor die. The HCT790 electrical characteristics are similar to the MIL-S-19500/291 -
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2N6987 MIL-S-19500TX
Abstract: , consisting of two 2N2907A silicon PN P transistor die. The HCT740 electrical characteristics are similar to -
OCR Scan
Abstract: sealed, ceramic surface-mount transistor array, consisting of a 2N2907A silicon PNP transistor die. The -
OCR Scan
MIL-S-19500/558 HCT790TX HCT790TXV
Abstract: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose · Low power · PNP silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N2907AJ) · JANTX level (2N2907AJX) · JANTXV level (2N2907AJV) · JANS level (2N2907AJS) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Features · Semicoa Semiconductors
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12N2907A
Abstract: PROCESS CP591V Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A Central Semiconductor
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CXT2907A CZT2907A CHIP TRANSISTOR ELECTRONIC TRANSISTOR CORP 2N2905a equivalent
Abstract: PROCESS Small Signal Transistor CP591V PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE COLLECTOR R1 EPITAXIAL PLANAR 19 x 19 MILS 7.1 MILS 3.5 x 4.3 MILS 3.5 x 4.5 MILS Al - 30,000Å Au - 18,000Å 145 Adams Avenue Hauppauge, NY 11788 USA Central Semiconductor
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Abstract: PROCESS CP591 Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A Central Semiconductor
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Abstract: PROCESS CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 45,900 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE -
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Abstract: 2N2907A Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N2907AJ) · JANTX level (2N2907AJX) · JANTXV level (2N2907AJV) · JANS level (2N2907AJS) · JANSR level (2N2907AJSR) · JANSF level (2N2907AJSF) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Applications · General purpose · Low power · PNP Semicoa Semiconductors
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150OC
Abstract: 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features Epitaxial Planar Die Construction Complementary NPN Type Available 2N2222A TO­92 Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS Symbol Value Unit Collector­Emitter Voltage Rating VCEO ­60 Vdc Collector±Base Voltage VCBO ­60 Vdc Emitter­Base Voltage VEBO ­5.0 Vdc Collector Current SeCoS
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2N2222A TO-92 2N2907A TO-92 Transistor 2N2222A 1N916 270TYP 050TYP
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