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2N2907+TRANSISTOR

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Abstract: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value ST 2N2907 ST 2N2907A 60 Semtech Electronics
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2N2907 PNP Transistor to 92 2N2907A plastic 2N2907 NPN Transistor 2N2907A TO-92 2N2907 plastic 2N2907 TRANSISTOR
Abstract: 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL hFE hFE hFE hFE hFE hFE hFE Central Semiconductor
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2n2907 TRANSISTOR PNP 2N2907A PNP Transistor transistor 2N2907 100MH
Abstract: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Symbol Unit ST 2N2907 ST 2N2907A Semtech Electronics
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2N2907 plastic package ST TRANSISTOR 2N2907 2n2907 to92 2n2222a plastic 2N2222A plastic package 2n2907a to92
Abstract: Data Sheet Central Semiconductor corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N2906, A 2N2907, A PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2906, A, 2N2907, A types are Silicon PNP Epitaxial Planar Transistors designed for small signal general purpose and , =150mA, lB1=lB2=15mA 100 100 ns (Continued on Reverse Side) R3 2N2906, A and 2N2907.A PNP SILICON TRANSISTOR -
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2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC J 2N2906 transistor 2n2906 LB 122 transistor JEDECTO-18
Abstract: identified on the transistor outline. Note the collector is connected also to the case. The leads must not , protect the transistor. The transistor leads may be dip-soldered at at temperature of 240°C for 10 -
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ledex transistor t3n 2N2906 to-92 PNP 2N2907 T31N 5B07 SO-132A C7/B11 Q7G13 07D13 0GDQ12E T-31-
Abstract: 2N2907 High Speed Switching Transistor Features: · NPN silicon planar switching transistors. · Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. · , . Collector Page 1 31/05/05 V1.0 2N2907 High Speed Switching Transistor Switching and Linear , Transistor Electrical Characteristics (Ta = 25°C Unless Otherwise Specified) Parameter Symbol Test , .0 2N2907 High Speed Switching Transistor Notes: International Sales Offices: AUSTRALIA ­ Farnell Multicomp
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pin configuration transistor 2n2907 2N2907 application notes 2n2907 multicomp applications of ic 4066 High speed switching Transistor
Abstract: SPRRGUE TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs. All of these devices are furnished in a 14-lead dual in-line plastic A package. The molded package is identical to that , into printed wiring boards. TYPICAL RATINGS (Max.) Power Dissipation, PD (each transistor -
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TPQ3724 TPQ3725 TPQ3725A 2N3799 TPQ6502 TPQ6700 2n390g 2N390G TRANSISTOR 2N2906 NPN Transistor BVC60 TPQ2221 2N2221 TPQ2222 TPQ2483 TPQ2484
Abstract: PRODUCT Description Package Polarity FET: Diode: 2N2907AQCSM 2N2907AQF Quad Transistor Quad Transistor , 300 300 10/0.15 10/0.15 10/0.15 10/0.15 200MHz 200MHz 200MHz 200MHz 2N2907AQLCC20 Quad Transistor 2N2907EX8CSM 8 Transistor Array Quad Ceramic Flat Pack PNP Searched through 100 records and found 4 Semelab
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2N2905 2N2905A-JQR-B 2N3036L 2N2907A2 TRANSISTOR NPN 60V 2n2907 pnp bipolar transistor 2n2907am 2N2905A 2N2905ACSM 2N2905AL 2N2905-JQR-B
Abstract: (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC=50mAdc, VCE=20Vdc, f=100MHz) SWITCHING Micro Commercial Components
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ic 4521 10Vdc J 2N2907A equivalent 2N2907A IC 406
Abstract: Philips Semiconductors Product specification PNP switching transistors FEATURES · High current (max. 600 mA) · Low voltage (max. 60 V). APPLICATIONS · Switching and linear amplification. PINNING PIN 1 2 3 emitter base 2N2907; 2N2907A DESCRIPTION collector, connected to case DESCRIPTION PNP switching transistor in a TO -18 metal package. NPN complements: 2N2222 and 2N2222A. Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VcBO V CEO PARAMETER collector-base -
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MGD624
Abstract: Philips Semiconductors Product specification PNP switching transistors FEATURES · High current (max. 600 mA) · Low voltage (max. 60 V). APPLICATIONS · Switching and linear amplification. PINNING PIN 1 2 3 emitter base collector PH2907; PH2907A DESCRIPTION DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complements: PH2222 and PH2222A. QUICK REFERENCE DATA , Tamb - 25 C C -6 5 -6 5 °C THERMAL CHARACTERISTICS SYMBOL ^th j-a Note 1. Transistor mounted -
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Abstract: Output Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC=50mAdc, VCE=20Vdc, f Shanghai Lunsure Electronic
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Abstract: transistor at 1 volt, and F (forced gain) is the ratio of IC/IBF in a circuit. EXAMPLE: For type 2N2905 , transistor well into the saturation region. From Figure 1, it is seen that hFE @ 1 volt is approximately 0.6 Motorola
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2N2904A 2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA MOTOROLA 2N2905A motorola transistor 2N2907 2N2219 2N2904A/2N2905 205AD 2N2906A/2N2907 206AA
Abstract: =15mAdc) (IC=500mAdc, IB=50mAdc) Output Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC Micro Commercial Components
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Abstract: =50mAdc) Output Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC=50mAdc, VCE=20Vdc, f Micro Commercial Components
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Abstract: =15mAdc) (IC=500mAdc, IB=50mAdc) Output Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC Micro Commercial Components
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Abstract: 2N2906/2907 TO-18 (TO-206AA) CASE 26-03, STYLE 1 2N3485/3486 TO-46 (TO-206AB) GENERAL PURPOSE TRANSISTOR -
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TRANSISTOR 2n2904 transistor 2N2905 motorola motorola 2N2905 2N2904A MOTOROLA 2N2907 JAN 2N2905ALJANS 2N2904 2N3485 2N3486 2N2904/2905 N3486
Abstract: SPRRGUE TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs. All of these devices are furnished in a 14-lead dual in-line plastic A package. The molded package is identical to that , into printed wiring boards. TYPICAL RATINGS (Max.) Power Dissipation, PD (each transistor -
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MC1305P TPQ6002 itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 2N2484 ICL8008CTY ULN2151D ULN2151M ITT512 ITT552
Abstract: ALLEGRO MICROSYSTEMS INC , 33E 0504330 0005713 4 SLGR mmÊm 'T -m v z ^ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. T h e m olded package is identical to that used with most consum er integrated , Transistor). 500 mW (Total Package) .2.0 W* Operating Temperature -
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TPQ2907A 2N3904 2n2222 transistor pin b c e tpq2369 a1005-0a WPSA05 TPQ2222A TPQ2369 TPQ6427 TPQ3904 TPQA06 TPQA05
Abstract: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown , boards. ABSOLUTE MAXIUMUM RATINGS 'ower Dissipation, P0 (Each Transistor). 500 mW (Total , TPQ7053 SERIES TPQ QUAD TRANSISTOR ARRAYS ELECTRICAL CHARACTERISTICS at TA = + 25°C DC Current , indicated lc, VCE = 5.0 V. SERIES TPQ QUAD TRANSISTOR ARRAYS ELECTRICAL CHARACTERISTICS at TA = + 2S -
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TPQ4002A TPQ4354 TPQ2221A TPQ5550 TPQ2906A TPQ5400 2n2222 2n5401 2n5551 tpq5551 TPQ2906
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