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Part Manufacturer Description Datasheet BUY
2N2907AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4 visit Digikey Buy
2N2907AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 visit Digikey Buy
2N2907AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy
2N2907AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
2N2907AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
2N2907A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 visit Digikey Buy

2N2907 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

2n2907 transistor

Abstract: Jea lfcsp transistor with a higher than the 2N2907. Given a typical Vbe of 0.7 V, the voltage at VSUM is ~1.2 V when , 10 nA to 1 mA applied to the INPT pin is the collector current of an optimally scaled NPN transistor , 6.69k 03053-033 THEORY The base-emitter voltage of a BJT (bipolar junction transistor) can be , adjacent guard pins, VSUM and IREF, due to the low offset voltage of the JFET op amp. Transistor Q1 , , of Q1 is compared with the reference VBE2 of a second transistor, Q2, operating at IREF. This is
Analog Devices
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2n2907 transistor Jea lfcsp AD8305 AD83051 MO-220-VEED-2 CP-16-2 AD8305ACP-R2 AD8305ACP-REEL7

2n2907 transistor

Abstract: K 3053 TRANSISTOR The 2N2907 transistor used in Figure 34 is a common PNP-type switching transistor. Ra and Rb are , divider network by choosing a transistor with a higher than the 2N2907. Given a typical Vbe of 0.7 V , transistor, which converts this current to a voltage (VBE) with a precise logarithmic relationship. A , base-emitter voltage of a BJT (bipolar junction transistor) can be expressed by Equation 1, which immediately , adjacent guard pins, VSUM and IREF, due to the low offset voltage of the JFET op amp. Transistor Q1
Analog Devices
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K 3053 TRANSISTOR pin configuration transistor 2n2907 AD8304 AD8305ACP MAT03 op AD7810 AD8305ACPZ-R2 AD8305ACPZ-RL7 AD8305-EVALZ C03053-0-4/10
Abstract: Prior to AD8305 Power-On The 2N2907 transistor used in Figure 34 is a common PNP-type switching , values may be used for this divider network by choosing a transistor with a higher β than the 2N2907 , transistor, which converts this current to a voltage (VBE) with a precise logarithmic relationship. A , The base-emitter voltage of a BJT (bipolar junction transistor) can be expressed by Equation 1, which , JFET op amp. Transistor Q1 converts the input current IPD to a corresponding logarithmic voltage, as Analog Devices
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2N2907 PNP Transistor to 92

Abstract: 2N2907A plastic ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value ST 2N2907 ST 2N2907A 60 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 23/12/2005 ST 2N2907
Semtech Electronics
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2N2907 PNP Transistor to 92 2N2907A plastic 2N2907 NPN Transistor 2N2907A TO-92 2N2907 plastic 2N2907 TO-92

2N2907

Abstract: 2n2907a 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2906 2N2907 SYMBOL TEST CONDITIONS MIN MAX , V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP
Central Semiconductor
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2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907 100MH

2N2907 PNP Transistor to 92

Abstract: 2N2907 plastic ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Symbol Unit ST 2N2907 ST 2N2907A , 2N2907 / 2N2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit ST 2N2907
Semtech Electronics
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2N2907 plastic package ST TRANSISTOR 2N2907 2n2907 to92 2N2222A plastic package 2n2222a plastic st 2n2222a

2N2907

Abstract: 2n2907 TRANSISTOR PNP ) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N2906, A 2N2907, A PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2906, A, 2N2907, A , =150mA, lB1=lB2=15mA 100 100 ns (Continued on Reverse Side) R3 2N2906, A and 2N2907.A PNP SILICON TRANSISTOR , ©JA ©JC ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 2N2906 2N2907 -65 to +200 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600
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2N2907 a TRANSISTOR LG 631 IC 2N2907 PNP Transistor J 2N2906 transistor 2n2906 LB 122 transistor JEDECTO-18

2N2906

Abstract: 2N2907 TRANSISTOR -sn- ti J 2N2906 2N2907 These transistors are silicon planar epitaxial pnp devices conforming to , and general purpose applications. QUICK REFERENCE DATA 2N2906 2N2907 VCBOmax- 60V VCEOmax- 40V , GENERAL PURPOSE 2N2906 SMALL SIGNAL TRANSISTORS 2N2907 I I T-3N- »V Electrical , transfer ratio Vce - 10V, lc = 0.1mA and Tamb = 255C 2N2906 20 2N2907 35 Vce = 10V, lc = 1.0mA and Tamb = 25°c 2N2906 25 2N2907 50 Vce = 10V, lc = 10mA and Tarnb = 25Â
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transistor t3n ledex T31N PNP 2N2907 2N2906 to-92 5B07 SO-132A C7/B11 Q7G13 07D13 0GDQ12E T-31-

pin configuration transistor 2n2907

Abstract: 2N2907 application notes 2N2907 High Speed Switching Transistor Features: · NPN silicon planar switching transistors. · , . Collector Page 1 31/05/05 V1.0 2N2907 High Speed Switching Transistor Switching and Linear , .0 2N2907 High Speed Switching Transistor Notes: International Sales Offices: AUSTRALIA ­ Farnell , Test : Length : 300µs, Duty Cycle 2% Page 2 31/05/05 V1.0 2N2907 High Speed Switching Transistor Electrical Characteristics (Ta = 25°C Unless Otherwise Specified) Parameter Symbol Test
Multicomp
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2N2907 application notes 2n2907 multicomp applications of ic 4066 High speed switching Transistor

2n390g

Abstract: 2N390G TRANSISTOR SPRRGUE TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors , into printed wiring boards. TYPICAL RATINGS (Max.) Power Dissipation, PD (each transistor , 400 150 2N2906 TPQ2907 60 40 5 50 100 â'" 150 10 200 8.0 400 150 2N2907 TPQ3798 60 40 5 10 150 â , '" 150 10 200 8.0 400 150 2N2221/2N2906 TPQ6002 60 30 5 30 100 â'" 150 10 200 8.0 400 150 2N2222/2N2907
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TPQ3724 2N3724 TPQ3725 TPQ3725A 2N3799 TPQ6502 2n390g 2N390G TRANSISTOR BVC60 TPQ2221 2N2221 TPQ2222 TPQ2483 TPQ2484

2N2907A2

Abstract: 2N2907 NPN Transistor beginning "2N2907" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N2907 2N2907A 2N2907A-220M-ISO 2N2907ACECC 2N2907ACSM 2N2907ACSM4 2N2907ACSM4 , 2N2907CSM-JQR-B 2N2907-JQR-B Polarity PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP , PRODUCT Description Package Polarity FET: Diode: 2N2907AQCSM 2N2907AQF Quad Transistor Quad Transistor , 300 300 10/0.15 10/0.15 10/0.15 10/0.15 200MHz 200MHz 200MHz 200MHz 2N2907AQLCC20 Quad Transistor
Semelab
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2N2905 2N2905A-JQR-B 2N3036L 2N2907A2 TRANSISTOR NPN 60V 2n2907 pnp bipolar transistor 2n2907am 2N2905A 2N2905ACSM 2N2905AL 2N2905-JQR-B

ic 4521

Abstract: 2N2907 MCC 2N2907 2N2907A omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Ratings Symbol VCEO VCBO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base , cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2907A (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) Emitter Cut-off current (IC=0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE , MCC 2N2907,2N2907A Symbol Parameter Min Max Units - 400 1.6 mVdc Vdc
Micro Commercial Components
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ic 4521 10Vdc J 2N2907A equivalent 2N2907A IC 406

2N2222

Abstract: 2N2907 . PINNING PIN 1 2 3 emitter base 2N2907; 2N2907A DESCRIPTION collector, connected to case DESCRIPTION PNP switching transistor in a TO -18 metal package. NPN complements: 2N2222 and 2N2222A. Fig , voltage collector-emitter voltage 2N2907 2N2907A collector current (DC) total power dissipation DC current , System (IEC 134). SYMBOL VcBO V CEO 2N2907; 2N2907A PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A emitter-base voltage collector current (DC) peak collector current peak
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MGD624

2N2907 PNP Transistor to 92

Abstract: 2N2907 transistor in a TO-92; SOT54 plastic package. NPN complements: PH2222 and PH2222A. QUICK REFERENCE DATA , Tamb - 25 C C -6 5 -6 5 °C THERMAL CHARACTERISTICS SYMBOL ^th j-a Note 1. Transistor mounted , PH2907; PH2907A PARAMETER collector cut-off current 2N2907 collector cut-off current 2N2907A emitter cut-off current DC current gain 2N2907 2N2907A DC current gain 2N2907 2N2907A DC current gain 2N2907 2N2907A DC current gain DC current gain 2N2907 2N2907A CONDITIONS MIN. MAX. UNIT |E = 0
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2N2907A

Abstract: 2N2907 2N2907A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Transistors Maximum Ratings Symbol VCEO VCBO Rating Collector-Emitter Voltage 2N2907 2N2907A , hFE Collector cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150â"ƒ) 2N2907A , Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC , NOTE Φ Φ ΦTYP 2N2907,2N2907A Symbol Parameter Min Max Units - 400
Shanghai Lunsure Electronic
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2n2907 Motorola

Abstract: motorola transistor 2N2907A MOTOROLA General Purpose Transistors 2N2904A* thru 2N2907,A* PNP Silicon Annular , (Max) @ IC = 150 mAdc · 2N2904A thru 2N2907, A Complement to NPN 2N2219, A, 2N2222, A 1 EMITTER , 2N2904A/2N2905,A CASE 79­04, STYLE 1 TO­39 (TO­205AD) 2N2906A 2N2907,A Total Device Dissipation @ , Storage Junction Temperature Range TJ, Tstg ­ 65 to +200 Max 2N2906A/2N2907,A CASE 22­03 , 2N2904A 2N2905,A 2N2906A 2N2907,A Thermal Resistance, Junction to Ambient RqJA 292 438
Motorola
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2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2906A/2N2907 206AA 2N2904A/D

2N2907

Abstract: ic 4521 !"# 2N2907 2N2907A Features · · High current (max.600mA) Low voltage (max.60V) PNP Switching , Ratings Symbol VCEO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base Voltage Emitter-Base , @ 25 C Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE , =0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE , .016 .021 0.406 0.533 NOTE TYP www.mccsemi.com Revision: 3 1 of 3 2008/01/01 2N2907
Micro Commercial Components
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2N2907 application notes

Abstract: 2n2907 !"# 2N2907 2N2907A Features · · · High current (max.600mA) Low voltage (max.60V) Lead Free , VCEO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base Voltage Emitter-Base Voltage , @ 25 C Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE , =0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE , Directive Annex 7. www.mccsemi.com Revision: 3 1 of 3 2008/01/01 2N2907,2N2907A MCC Micro
Micro Commercial Components
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2N2907 plastic

Abstract: 2N2907A plastic !"# 2N2907 2N2907A Features · · · High current (max.600mA) Low voltage (max.60V) Case Material: Molded Plastic. Classification Rating 94V-0 Rating Collector-Emitter Voltage 2N2907 2N2907A , Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB , =5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC , 0.406 0.533 NOTE TYP www.mccsemi.com Revision: 2 1 of 3 2006/05/17 2N2907,2N2907A
Micro Commercial Components
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motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA '" Continuous ic 600 mAdc 2N2904,A 2N2905.A 2N2906.A 2N2907,A 2N3485.A 2N3486.A Total Device Dissipation , 2N2906/2907 TO-18 (TO-206AA) CASE 26-03, STYLE 1 2N3485/3486 TO-46 (TO-206AB) GENERAL PURPOSE TRANSISTOR , '" 2N2905, 2N2907, 2N3486 35 â'" â'" 2N2904A, 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A 75 â'" â'" dC = 1.0 mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 25 _ _ 2N2905, 2N2907, 2N3486 50 , mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 35 â'" â'" 2N2905, 2N2907, 2N3486 75 â'" â'" 2N2904A
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TRANSISTOR 2n2904 transistor 2N2905 motorola motorola 2N2905 2N2904A MOTOROLA 2N2907 JAN 2n2904 motorola 2N2904/2905 N3486
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