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2N2904AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5 visit Digikey Buy
2N2904A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
2N2904A LEAD FREE Central Semiconductor Corp TRANS PNP 60V 0.6A TO-39 visit Digikey Buy
JAN2N2904A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, SIMILAR TO TO-39, 3 PIN visit Digikey Buy
JANTXV2N2904A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
JANTX2N2904A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy

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2N2904A Datasheet

Part Manufacturer Description PDF Type
2N2904A Boca Semiconductor NPN SILICON PLANAR SWITCHING TRANSISTORS - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904A Central Semiconductor Small Signal Transistors Original
2N2904A Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 60V 600MA TO-39 Original
2N2904A Microsemi BJT, PNP, Switching Silicon Transistor, VCB0 60V, IC 0.6A - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904A On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistors - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904A Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904A Semico Chip Type 2C2904A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904A Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N2904A Bharat Electronics Transistor Selection Guide Scan
2N2904A Central Semiconductor PNP METAL CAN Transistors Scan
2N2904A Continental Device India Semiconductor Device Data Book 1996 Scan
2N2904A Continental Device India Silicon Planar Switching Transistor Scan
2N2904A Crimson Semiconductor Transistor Selection Guide Scan
2N2904A Dionics PNP Si High Current Transistor Scan
2N2904A Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Scan
2N2904A Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N2904A Ferranti Semiconductors Shortform Data Book 1971 Scan
2N2904A Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N2904A Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N2904A General Diode Transistor Selection Guide Scan
Showing first 20 results.

2N2904A

Catalog Datasheet MFG & Type PDF Document Tags

2N2904

Abstract: 2n2905 TECHNICAL DATA 2N2904, 2N2904A JAN, JTX, JTXV 2N2904AL JAN, JTX, JTXV 2N2905, 2N2905A JAN, JTX , REV: F Page 1 of 2 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL , Ratio IC = 0.1 mAdc, VCE = 10 Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904, 2N2904A, L 2N2905, 2N2905A, L 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 35 40 75 25 50 40 100 35 75 40
New England Semiconductor
Original
2N2904 transistor 2N2905 transistor TRANSISTOR 2n2905 Transistor 2N2905A TRANSISTOR 2n2904 2n2904 2n2905 MIL-PRF-19500/290

2n2905

Abstract: 2n2904 2N2904A 2N2904AL Qualified Level JAN JANTX JANTXV JANS 2N2905 2N2905A 2N2905AL MAXIMUM , 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL CHARACTERISTICS (con't , , VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904, 2N2904A, L 2N2905, 2N2905A, L 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL
Microsemi
Original
2N2905a equivalent 2N2904 PNP Transistor 2N2905 equivalent 2N2905A JANTXV 2N2905A JANS

2n697

Abstract: 2N956 2N2904 2N2904A 2N2904A 2N2904A 2N2904A 2N3250A 2N2905AJ/5 2N2907AJ A 2N2904A 2N2904A 2N2904A 2N2904A 2N2905 2N2907 2N2907 2N2905 2N2905 2N2907 2N2905A 2N2905A 2N2907A 2N2905A 2N2905A 2N2906A 2N2904A 2N2904A 2N2906A 2N2904A 2N2904A 2N2904A 2N2907A 2N2905A 2N2905A 2N2907A 2N4032 2N2906A 2N2904A 2.8 2.0 2.0 2.0
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OCR Scan
2N956 2n697 2N2218A 2N2221A 2N2868 2N3110 2N2194 2N2194A

TRANSISTOR 2n2904

Abstract: 2N2904 N AMER PHILIPS/DISCRETE L^E D â  LbSB^ai 0D5äim blâ â  2N2904 2N2904A uu I IAPX , voltage (open emitter) -vCBO max. 60 V Collector-emitter voltage (open base) 2N2904 -VCEo 2N2904A -VCEO , This Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE 2N2904 2N2904A , base) â'" Iq < 100 mA 2N2904 -VCE0 max. 40 V 2N2904A -VCE0 max. 60 V Emitter-base voltage (open , J> bbsa'm CHARACTERISTICS A 002011b 4*16 2N2904 2N2904A IAPX Tamb = 25 °C unless otherwise
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OCR Scan
W744 z823s 2n2904 philips Silicon Epitaxial Planar Transistor philips Z823S2

2n2905a

Abstract: 2N2905 Voltage11) (IC = 10 mAdc. Ie = 0) v (BR|CEO 2N2904. 2N2905 2N2904A. 2N2905A v (BR)CBO v (BR)EBO 'CBO 2N2904. 2N2905 2N2904A. 2N2905A 2N2904. 2N2905 2N2904A. 2N2905A 0 02 0 01 20 10 -continued-. Symbol Min , " SEMICONDUCTOR! TECHNICAL DATA 2N2904. 2N2904A, 2N2905 2N2905A PNP Silicon Small-Signal , ' Tstg -65 to 200 Symbol v CEO VC 8 0 v EBO !C 2 N2904 2N2905 40 60 50 600 2N2904A 2N2905A 60 Unit , Unit MAdc -1.0 1.0 0.05 nAdc 2N2904.2N2905 2N2904A 2N2905A 'e b o - _. ON
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OCR Scan
2N290S 2N2904JAN 2N2905JAN

2n2905

Abstract: 2N2904 2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m , =500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA 2N2904 2N2905 60 40 2N2904A 2N2905A 60 60 UNITS V V V A W W °C 5.0 0.6 0.6 3.0 -65 to +200 2N2904A 2N2905A MIN MAX 10 50 60 60 5.0 0.4 1.6 1.3 2.6 2N2905 , 2N2905 MIN MAX 20 60 40 5.0 0.4 1.6 1.3 2.6 2N2904 2N2904A MIN MAX 20 VCE=10V, IC=100A (2N2904, 2N2905) VCE=10V, IC=100A (2N2904A, 2N2905A) 40 VCE=10V, IC=1.0mA (2N2904, 2N2905) 25 VCE=10V, IC
Central Semiconductor
Original
2N2905A transistor 100MH

2N2905

Abstract: 2N2905 equivalent , SWITCHING, TYPES, 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV, JANS , +25°C. 2N2904 (1) 2N2905 (1) 2N2904A, (2) 2N2905A, (2) 2N2904AL, (2) 2N2905AL (2) PT = (1) TA , 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 40 40 , (see 4.5.1). Types 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL Cobo 100 kHz f 1 MHz , 40 60 60 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector to base cutoff current
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Original
2n2905a jantx 2N2905A JAN M2N2905A MIL-PRF-19500/290N MIL-PRF-19500/290M MIL-PRF-19500

2N2905 equivalent

Abstract: 2N2905a equivalent per MIL-PRF-19500/290 DEVICES LEVELS 2N2904 2N2904A 2N2904AL JAN JANTX JANTXV JANS , (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 35 40 75 IC = 1.0mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 25 50 40 100 IC = 10mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL , IC = 500mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 30 40 50
Microsemi
Original
equivalent transistor 2N2905 of 2n2905 T4-LDS-0186
Abstract: N AUER PHILIPS/DISCRETE bbS3^31 D02fiU4 blS I APX b'lE T > 2N2904 2N2904A SILICON , ) 2N2904 2N2904A Collector-emitter voltage (open base) Collector current (d.c.) 40 to 120 , SSI * A P X 2N2904 2N2904A RATINGS Limiting values in accordance with the Absolute Maximum , < 100 mA Emitter-base voltage (open collector) - v CBO 2N2904 2N2904A max. 60 V - V CE0 , /W N AMER PHILIPS/DISCRETE b^E bb53T31 Q D 2flllb UT6 2N2904 2N2904A » Silicon -
OCR Scan
S3T31

2n2907 Motorola

Abstract: motorola transistor 2N2907A MOTOROLA General Purpose Transistors 2N2904A* thru 2N2907,A* PNP Silicon Annular , Current­Gain - Bandwidth Product - fT = 200 MHz (Min) @ IC = 50 mAdc *2N2904A, 2N2905A and 2N2907A are , (Max) @ IC = 150 mAdc · 2N2904A thru 2N2907, A Complement to NPN 2N2219, A, 2N2222, A 1 EMITTER , 600 mAdc Rating Collector Current - Continuous 2N2904A 2N2905,A 3 2 1 2N2904A/2N2905,A CASE 79­04, STYLE 1 TO­39 (TO­205AD) 2N2906A 2N2907,A Total Device Dissipation @
Motorola
Original
2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A/2N2905 2N2906A/2N2907 206AA 2N2904A/D

2N2905

Abstract: equivalent transistor 2N2905 . (long-leaded) 2N2904AL & 2N2905AL MAXIMUM RATINGS Parameters / Test Conditions Collector-Emitter Voltage , CBO V EBO R JA R JC IC PT TJ & T stg Value 2N2904 2N2904A 2N2905 2N2905A 40 60 60 5.0 195 50 600 , 2N2904A, 2N2905A Collector-Emitter Cutoff Voltage V CE = 40 V 2N2904, 2N2905 V CE = 60 V 2N2904A, 2N2905A Collector-Base Cutoff Current V CB = 60 V All Types V CB = 50 V 2N2904, 2N2905 2N2904A, 2N2905A 2N2904, 2N2905 2N2904A, 2N2905A Symbol Min. Max. Unit V (BR)CEO 40 60 V I CES 1.0 uA I CBO1 I CBO2 I
Microsemi
Original
2N2904 equivalent

2N2904

Abstract: 2N2904A JL 2N2904 2N2904A PHILIPS INTERNATIONAL SbE D m 711002b 00421,20 560 HPHIN SILICON PLANAR , {open emitter) ~vCBO max. 60 V Collector-emitter voltage (open base) 2N2904 -VCEO 2N2904A -VcEO max , This Material Copyrighted By Its Respective Manufacturer 2N2904 2.N2904A_J^_ - PHILIPS , Collector-emitter voltage (open base) -lC< 100 mA 2N2904 -VCEO 2N2904A -VCEO max. max. 40 60 V V Emitter-base , 2N2904A |E = 0; _Vcb = 50V -'CBO < 20 10 nA IE = 0; -VCB = 50 V; Tamb = 150 °C -'CBO < 20 10 nA +VBE =
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OCR Scan
T-37-17 J-37-17 Z82352 7Z82353

2N2905

Abstract: 2N2905A Data Sheet 2N2904 ^m M â'žâ  | , â  mâ"¢ 2N2904A COilFPHI 2N2905 WdlLl HI , Conditions 2N2904 2N2904A 2N2905 2N2905A UNIT 60 60 Vdc 5.0 5.0 Vdc 40 60 Vdc 600 mAdc 0.6 watts 3.0 watts -65 to +200°C 2N2904 2N2904A 2N2905 2N2905A Min Max Min Max Unit iCBO , 2N2904A 2N2905A Min Max Min Max Unit hFE VCE=10V, IC=100uA(2N2904,2N2905 Only) 20 35 - hFE VCE , =500mA(2N2904,2N2905 Only) 20 30 - hFE VCE=10V, ¡C=500mA(2N2904A,2N2905A Only) 40 50 - fT VCE
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OCR Scan
2N290 2n290a 2N2S04A

equivalent transistor 2N2905

Abstract: 2N2905a equivalent , SILICON, SWITCHING TYPES 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV , 300 30 2N2904A 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 40 40 175 40 40 120 40 2N2905A 2N2905AL Min Max hFE5 (1 , 100 300 50 (1) Pulsed (see 4.5.1). Types 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL , 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Emitter to base cutoff current 10 V(BR)CEO
DEPARTMENT OF DEFENSE
Original
MIL-PRF-19500/290K MIL-PRF-19500/290J

2N2904A

Abstract: 2N2906A-2N2907A 2N2904A-2N2905A 2N2906A-2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904A , 2N2904A-2N2905A-2N2906A-2N2907A THERMAL DATA 2N2904A 2N2905A R t h j- cas e R t h j-amb Thermal Resistance Junction-case , , duty cycle = 1.5 %. * See test circuit. 2/7 200 MHz 2N2904A-2N2905A-2N2906A-2N2907A , 2N2904A-2N2905A-2N2906A-2N2907A Test Circuit for ton, tr, td. PULSE GENERATOR : tr 2.0 ms Frequency = 150 Hz Zo = 50 , 2N2904A-2N2905A-2N2906A-2N2907A TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7
STMicroelectronics
Original
2N2907A diagram 2N2904A/2N2905A 2N2906A/2N2907A P008B

motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA Junction Temperature Range Tj. Tstg - 65 to + 200 °C 2N2904A 2N2905,A, 2N2906,A, 2N2907A 2N3485,A , '" 2N2905, 2N2907, 2N3486 35 â'" â'" 2N2904A, 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A , â'" â'" 2N2904A, 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A 100 â'" â'" (Ic = 10 mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 35 â'" â'" 2N2905, 2N2907, 2N3486 75 â'" â'" 2N2904A , ) 2N2904A, 2N2906A, 2N3485A 40 â'" 120 2N2905A, 2N2907A, 2N3486A 100 â'" 300 (Ic = 500 mAdc, Vce = 10
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OCR Scan
transistor 2N2905 motorola motorola 2N2905 2N2904A MOTOROLA 2N2907 JAN 2n2904 motorola 2n2907a motorola 2N2904/2905 2N2906/2907 2N3485/3486 N3486

complement to 2n3700

Abstract: 2N4033 -18 TO-5 TO-5 TO-5 2N2906A 2N4030 2N2904A 2N2906A 2N2906A 2N2904A 2N2904A 2N4033 2N4033 2N4029 2N4033
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OCR Scan
complement to 2n3700 2N720 2N3108 2N698 2N719A 2N719 2N656

2N2905A india

Abstract: 2N2905A =30V Rise time ton Turn-On Time MIN 2N2904A-05A MAX UNIT 8.0 30 MHz pF pF - 10 , TRANSISTORS 2N2904A 2N2905A TO-39 Boca Semiconductor Corp. BSC http://www.bocasemi.com Switching , SYMBOL 2N2904A, 05A UNIT VCEO 60 Collector -Emitter Voltage VCBO 60 Collector -Base Voltage , 1.6 1.3 2.6 2N2904A >40 >40 >40 40-120 >40 UNIT V V V nA 2N2905A >75 >100 >100
Boca Semiconductor
Original
2N2905A india
Abstract: m 2N2904A \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N2904A is D esigned for G eneral Purpose A m plifier and Sw itching A pplications. MAXIMUM RATINGS 600 mA lc V ce -60 V P diss 3.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 58 °C /W STATIC CHARACTERISTICS SYMBOL t c = 25 °c MINIMUM TYPICAL MAXIMUM B V ceo , 2N2904A DYNAMIC CHARACTERISTICS SYMBOL t c =25 °c TEST CONDITIONS MINIMUM TYPICAL -
OCR Scan

2N2904A

Abstract: LE17 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2904A · Low Power · Hermetic TO-39 Metal package. · Ideally suited for High Speed Switching and General Purpose Applications · Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO , Number 8076 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2904A ELECTRICAL , PLANAR EPITAXIAL PNP TRANSISTOR 2N2904A MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40
Semelab
Original
LE17

2N 2905a pnp transistor

Abstract: 2904 " SEMICONDUCTOR! TECHNICAL DATA 2N2904. 2N2904A, 2N2905 2N2905A PNP Silicon Small-Signal , ' Tstg -65 to 200 Symbol v CEO VC 8 0 v EBO !C 2 N2904 2N2905 40 60 50 600 2N2904A 2N2905A 60 Unit , Voltage11) (IC = 10 mAdc. Ie = 0) v (BR|CEO 2N2904. 2N2905 2N2904A. 2N2905A v (BR)CBO v (BR)EBO 'CBO 2N2904. 2N2905 2N2904A. 2N2905A 2N2904. 2N2905 2N2904A. 2N2905A 0 02 0 01 20 10 -continued-. Symbol Min , Unit MAdc -1.0 1.0 0.05 nAdc 2N2904.2N2905 2N2904A 2N2905A 'e b o - _. ON
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OCR Scan
2N 2905a pnp transistor 2904 st 2904 2905 transistor CI 2904 2905a

2905a

Abstract: ic 2905a Junction Temperature Range Tj. Tstg - 65 to + 200 °C 2N2904A 2N2905,A, 2N2906,A, 2N2907A 2N3485,A , '" 2N2905, 2N2907, 2N3486 35 â'" â'" 2N2904A, 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A , â'" â'" 2N2904A, 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A 100 â'" â'" (Ic = 10 mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 35 â'" â'" 2N2905, 2N2907, 2N3486 75 â'" â'" 2N2904A , ) 2N2904A, 2N2906A, 2N3485A 40 â'" 120 2N2905A, 2N2907A, 2N3486A 100 â'" 300 (Ic = 500 mAdc, Vce = 10
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OCR Scan
ic 2905a 2904a 2907A 2907 a12907 2808a

2905a

Abstract: ic 2905a 2N2904A-2N2905A 2N2906A-2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904A , high-speed saturated switching and general purpose applications. 2N2904A/2N2905A approved to CECC 50002-100 , Collector Current Total Power Dissipation at T amb 25 °C for 2N2904A and for 2N2906A and at T c as e 25 °C for 2N2904A and for 2N2906A and Storage and Junction Temperature 1/7
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OCR Scan
A1290 2906A 2n 2905a

D2N2905A

Abstract: ic 2905a Data Sheet 2N2904 ^m M â'žâ  | , â  mâ"¢ 2N2904A COilFPHI 2N2905 WdlLl HI , Conditions 2N2904 2N2904A 2N2905 2N2905A UNIT 60 60 Vdc 5.0 5.0 Vdc 40 60 Vdc 600 mAdc 0.6 watts 3.0 watts -65 to +200°C 2N2904 2N2904A 2N2905 2N2905A Min Max Min Max Unit iCBO , 2N2904A 2N2905A Min Max Min Max Unit hFE VCE=10V, IC=100uA(2N2904,2N2905 Only) 20 35 - hFE VCE , =500mA(2N2904,2N2905 Only) 20 30 - hFE VCE=10V, ¡C=500mA(2N2904A,2N2905A Only) 40 50 - fT VCE
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OCR Scan
D2N2905A
Showing first 20 results.