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2N2647 Datasheet

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2N2647 N/A Basic Transistor and Cross Reference Specification
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1 pages,
29.65 Kb

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2N2647 N/A GE Transistor Specifications
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1 pages,
13.89 Kb

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2N2647 N/A Shortform Transistor PDF Datasheet
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1 pages,
149.76 Kb

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2N2647 N/A GE Transistor Specifications
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1 pages,
40.01 Kb

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2N2647 N/A Short Form Datasheet and Cross Reference Data
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1 pages,
89.65 Kb

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2N2647-10 N/A Short Form Datasheet and Cross Reference Data
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1 pages,
80.09 Kb

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2N2647 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
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1 pages,
32.36 Kb

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2N2647 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
97.02 Kb

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2N2647 N/A Semiconductor Master Cross Reference Guide
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1 pages,
114.94 Kb

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2N2647 Boca Semiconductor Silicon PN Unijuction Transistor
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2 pages,
131.18 Kb

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2N2647

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Abstract: 2N2646 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter , Ratings 2N2646 2N2646 2N2647 VB1E Base 1 ­ Emitter Voltage 30 V VB2E Base 2 ­ Emitter , Current V(BR)B1E 2N2646 2N2646 ­ 2N2647 Max µA 12 30 COMSET SEMICONDUCTORS V 1/2 2N2646 2N2646 2N2647 Symbol 2N2646 2N2646 ­ 2N2647 Ratings RBBO Intrinsic stand-off ratio VB1B2 = 10 V ... Original
datasheet

2 pages,
53.69 Kb

scr firing 2N2646 datasheet 2n2646 2n2647 rbbo 2n2646 of symbol power scr transistor 2N2646 2N2646 transistor datasheet 2n2646 equivalent 2n2647 High power SCR 2N2646 CIRCUIT SCR 2N2646 2N2646 2N2647 2N2646 abstract
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Abstract: 2N2646 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a , Temperature Capacitor discharge ­ 10µF or less, 30volts or less. 2N2646 2N2646 2N2647 30 50 2 35 300 -65 to +125 -65 to +150 Unit V mA A V mW °C °C 2N2646 2N2646 2N2647 ELECTRICAL CHARACTERISTICS , 2N2646 2N2646 Intrinsic stand-off ratio VB2B1 = 10V 2N2647 Interbase Resistance , VB2B1 = 3V Emitter ... Original
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3 pages,
95.59 Kb

2N2646 equivalent 2N2646 transistor datasheet 2n2646 of symbol "Power scr" rbbo power scr transistor 2N2646 2N2646 CIRCUIT 2n2647 SCR 2N2646 2N2646 High power SCR 2N2647 2N2646 abstract
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Abstract: ) 2N2646 2N2646 2N2647 PN UJTs CASE 22A-01 STYLE 1 Rating Symbol Value Unit Power Dissipation, Note 1 PD 300 , volts or less. http://www.bocasemi.com 2N2646 2N2646 • 2N2647 „ 7-3 7- * ELECTRICAL CHARACTERISTICS (Ta = , (VB2B1 = 10 V), Note 1 2N2646 2N2646 2N2647 V 0.56 0.68 - 0.75 0.82 Interbase Resistance (VB2B1 = 3 V, lE = 0 , Reverse Current (VB2E = 30 v, Ibi = o) 2N2646 2N2646 2N2647 'EB20 - 0.005 0.005 12 0.2 juA Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2646 2N2647 IP - 1 1 5 2 MA Valley Point Current (VB2B1 = 20 V, Rb2 = 100 ohms ... OCR Scan
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2 pages,
131.18 Kb

22A01 transistor 2n2647 EB20 2N2646 Vp 2N264 transistor 2n2646 SCR 2N2646 2N2646 CIRCUIT 2N2647 Unijunction transistor 2N2646 of 2N2646 transistor 2N2646 datasheet abstract
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Abstract: Current - 200 nA (Max) • Passivated Surface for Reliability and Uniformity 2N2646 2N2646 2N2647 PN UJTs CASE , 2N2647 . 7-3 7-AI 'ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Intrinsic Standoff Ratio (Vb2B1 = 10 V), Note 1 2N2646 2N2646 2N2647 V 0.56 0.68 - 0.75 , 1" V, l£ = 50 mA) lB2(mod) - 15 - mA Emitter Reverse Current (vb2e = 30 v, Ibi = o) 2N2646 2N2646 2N2647 'EB20 - 0.005 0.005 12 0.2 jua Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2646 2N2647 IP - 1 1 5 2 ma ... OCR Scan
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2 pages,
69.89 Kb

VQ2B1 EB20 motorola opto scr thyristor scr oscillator circuit transistor 2N2646 transistor 2N2646 motorola 2N2646 CIRCUIT 2n2647 silicon unijunction transistor 2N2646 transistor SCR 2N2646 motorola power transistor to-126 Unijunction transistor 2N2646 of datasheet abstract
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Abstract: 2N2647 Silicon Unijunction Transistor. 30V - 50mA. 1.29 Thyristors Uni. http://store.americanmicrosemiconductor.com/2n2647.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N2647 2N2647 Silic o n Unijunc t io n Trans is t o r. 3 0 V - 5 0 m A. Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! , Save: Americanmicrosemi 2N2647 $ 1.61 Information Spec Sheets Tutorials Shipping FAQs $ 1.29 ... Original
datasheet

1 pages,
238.33 Kb

2n2647 2N2647 2N2647 abstract
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Abstract: Datasheet Central Semiconductor corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N2646 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTOR JEDEC TO-18 CASE* DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2646 2N2646, 2N2647 types are silicon PN unijunction transistors designed for general purpose industrial applications. , »Conforms to JEDEC TO-18 outline except for lead configuration. 2N2647 VQB1 TEST CIRCUIT UNIT mW mA A V ... OCR Scan
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1 pages,
61.67 Kb

transistor 2N2646 Maa 435 2N2646 -pin configuration 2N2646 CIRCUIT 2N2646 transistor 2N2647 2N2646 Vp rbbo Unijunction transistor 2N2646 of 2N2646 2N2646 abstract
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Abstract: 2N2647 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2647 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Application PACKAGE STYLE TO-18 (MOD) MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC 2.0 A (PULSED) 30 V 300 m W @ TC = 25 OC -65 OC to +125 OC -65 OC to +150 OC 33 OC/W CHARACTERISTICS SYMBOL rBB rBB TC = 25 C O NONEd TEST CONDITIONS V V B2B1 MINIMUM 0.68 4.7 TYPICAL MAXIMUM 0.82 9.1 0.9 UNITS -K %/-'C V mA = ... Original
datasheet

1 pages,
20.55 Kb

2N2647 unijunction transistor 2N2647 abstract
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Abstract: 2N2647.GES2647 MIN. TYP. MAX. MIN. TYP. MAX Intrinsic Standoff Ratio (VBB = 10 V) >1 0.56 0.69 0.75 0.68 , Transistors and Switches 2N2646 2N2646, 2N2647, GES2646 GES2646, GES2647 GES2647 Silicon Unijunction Transistors TO-92 TO-18 The GE/RCA 2N2646 2N2646, GES2646 GES2646 and 2N2647, GES2647 GES2647 Controlled Rectifiers and other applications where a , resulting in lower saturation voltage, peak-point current and 2N2647 and GES2647 GES2647 are intended for , JEDa|c jo-18 package (2N2646 2N2646, industrial appllca ions where circuit economy is of primary 2N2647) and ... OCR Scan
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5 pages,
183.84 Kb

2N2647 TO-92 c45 scr 2n2646 of symbol Unijunction transistor 2N2646 of High power SCR 2n2646 package 2N2646 transistor pulse 4 SCR firing transistor 2N2646 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor GES2646 datasheet abstract
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Abstract: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 · Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N2647 610-2N2647 - Central Semiconductor 2N2647 ... Original
datasheet

2 pages,
62.55 Kb

2N2647 610-2N2647 610-2N2647 abstract
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Abstract: OflHonepexoAHbie ôwnoëapHbie TpaH3MCTopû OôoçHaneHèe Aíanor Pmax (Bt) UMe".ôaç. max (B) la èMn. ( A ) la o6p. ( mkA ) UocTaT. ( B ) h Toêa Kopnyc KT132A KT132A KT132B KT132B 2N2646 2N2646 2N2647 0,3 35 2,0 12,0 0,2 0,7-3,5 0,56-0,75 0,68-0,82 Case22A-01 KT133A KT133A KT133B KT133B 2N4870 2N4870 2N4871 2N4871 0,3 35 1,5 1,0 0,7-2,5 0,56-0,75 0,70-0,85 KT-26 KT-26 m "3aBofl TPAH3ÈCTOP" PecnyôëMKa Benapycb, 220064, t.Mmhck, yn.Kop"eHeBCKoro E-mail: trdir@integral.minsk.by KATAËOTnPOflYK-MM TeneôoH: (8-017) 277-44-41 Teneôaêc: (8-017) 277-41-41 ... OCR Scan
datasheet

1 pages,
22.73 Kb

KT133A KT132B KT132A 2N2647 AD 277 2N4871 2N4870 2N2646 KT133B KT132A abstract
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Abstract: gk1k 2N2647 2N2646 Thyristors and Unijunctions Thyristors Type Case Maximum ratings Characteristics 25 C {FM JJM 'FU 'GT1 VGT lHR 0F! V A °C uA (V/°C) mA V mA V (A) NTS 311 Plastic 30 0.6 150 50 (30/125) ... OCR Scan
datasheet

1 pages,
24.54 Kb

T018 s 2646 NTS 10 2n 2646 datasheet abstract
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Abstract: Uniformity 2N2646 2N2646 2N2647 PN UJTs · M A X IM U M R A T IN G S IT a = 25°C u n le ss otherw ise noted. , S/ OP TO ) 2N2646 2N2646 · 2N2647 25E D b 3 b 7 5 5 5 OOflOTDl f i ^ m + t ... OCR Scan
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2 pages,
126.96 Kb

SCR 2N2646 motorola 2n2646 2N2647 2N2646 Vp 2N2646 2N2646 motorola datasheet abstract
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2N2647 (#24315) Uni-Junction Transistors Division PPC Inc. Datasheet (none) Mil-Spec (none) Prod-Class (none) Shipping (none) Qual Data (none) Absolute Maximum Ratings Symbol Max Unit Power Dissipation
www.datasheetarchive.com/files/microsemi/products/24315-v1.htm
Microsemi 08/12/1999 7.87 Kb HTM 24315-v1.htm
Search Criteria: Package = TO-18, PartType = Uni-Junction Transistors PartNo Data Sheet Pack P D (W) IP (uni) (µA) N ( ) IEB20 IEB20 IEB20 IEB20 (µA) Iv (mA) 2N2646 2N2646 2N2646 2N2646 TO-18 STD 0.3 5 0.75 12 4 2N2647 TO-18 STD 0.3 2 0.82 0.2 8 2N4851 2N4851 2N4851 2N4851 TO-18 STD 0.3 2 0.75 0.1 2 2N4852 2N4852 2N4852 2N4852 TO-18 STD 0.3 2 0.85 0.1 4 2N4853 2N4853 2N4853 2N4853 TO-18
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Microsemi 07/12/1999 7 Kb HTM to-18-v1.htm
Search Criteria: Package = TO-18, PartType = Uni-Junction Transistors Part No Type Package PD (Watts) IP (uni) (uAmps) IEB20 IEB20 IEB20 IEB20 (uAmps) Iv (mAmps) Rbb (min) (Kohms) 2N4853 2N4853 2N4853 2N4853 PPC UNI TO-18 STD 0.3 0.4 0.05 6 4.7 2N4851 2N4851 2N4851 2N4851 PPC UNI TO-18 STD 0.3 2 0.1 2 4.7 2N4852 2N4852 2N4852 2N4852 PPC UNI TO-18 STD 0.3 2 0.1 4 4.7 2N2647 PPC UNI TO-18 STD 0.3 2 0.2 8 4.7 2N2646 2N2646 2N2646 2N2646 PPC UNI TO-18 STD 0.3 5 12 4 4.7
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Microsemi 30/12/1998 4.42 Kb HTM to-18.htm
Search Criteria: PartType = Uni-Junction Transistors, IP (uni) = 2 MicroAmp PartNo Data Sheet Pack P D (W) IP (uni) (µA) N ( ) IEB20 IEB20 IEB20 IEB20 (µA) Iv (mA) 2N2647 TO-18 STD 0.3 2 0.82 0.2 8 2N4851 2N4851 2N4851 2N4851 TO-18 STD 0.3 2 0.75 0.1 2 2N4852 2N4852 2N4852 2N4852 TO-18 STD 0.3 2 0.85 0.1 4 MU4892 MU4892 MU4892 MU4892 TO-92 STD 0.3 2 0.69 0.01 2 MU4893 MU4893 MU4893 MU4893
www.datasheetarchive.com/files/microsemi/products/uni/215_2.htm
Microsemi 07/12/1999 7.01 Kb HTM 215_2.htm
2N2647 PartID: 24315 | Rev: 1/4/99 PPC Inc. Part Type: Uni-Junction Transistors Package: TO-18 (STD-Thru Hole) 0.3 Watts 2 uAmps Maximum Ratings and Electrical
www.datasheetarchive.com/files/microsemi/products/24315.htm
Microsemi 04/01/1999 4.7 Kb HTM 24315.htm
Inc. Uni-Junction Transistors 2N2647 PPC Inc. Uni-Junction Transistors
www.datasheetarchive.com/files/microsemi/products/partno/2n26.htm
Microsemi 03/12/1999 7.32 Kb HTM 2n26.htm
2N2647 PPC UNI TO-18 STD 0.3 2 0.2 8 4.7 MU4891 MU4891 MU4891 MU4891 PPC UNI TO-92 STD 0.3 5 0.01 2 4 2N4870 2N4870 2N4870 2N4870 PPC UNI TO-92 STD
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Microsemi 23/12/1998 7.4 Kb HTM ppc.htm
Search Criteria: Division = PPC Inc., PartType = Uni-Junction Transistors PartNo Data Sheet Pack P D (W) IP (uni) (µA) N ( ) IEB20 IEB20 IEB20 IEB20 (µA) Iv (mA) 2N2646 2N2646 2N2646 2N2646 TO-18 STD 0.3 5 0.75 12 4 2N2647 TO-18 STD 0.3 2 0.82 0.2 8 2N4851 2N4851 2N4851 2N4851 TO-18 STD 0.3 2 0.75 0.1 2 2N4852 2N4852 2N4852 2N4852 TO-18 STD 0.3 2 0.85 0.1 4 2N4853 2N4853 2N4853 2N4853 TO-18
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Microsemi 07/12/1999 11.49 Kb HTM ppc-v1.htm
2N2647 PPC UNI TO-18 STD 0.3 2 0.2 8 4.7 MU4891 MU4891 MU4891 MU4891 PPC UNI TO-92 STD 0.3 5 0.01 2 4 2N4870 2N4870 2N4870 2N4870 PPC UNI TO-92 STD
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Microsemi 04/01/1999 7.34 Kb HTM uni_ppc.htm
Search Criteria: PartType = Uni-Junction Transistors, P D = 0.3 Watt PartNo Data Sheet Pack P D (W) IP (uni) (µA) N ( ) IEB20 IEB20 IEB20 IEB20 (µA) Iv (mA) 2N2646 2N2646 2N2646 2N2646 TO-18 STD 0.3 5 0.75 12 4 2N2647 TO-18 STD 0.3 2 0.82 0.2 8 2N4851 2N4851 2N4851 2N4851 TO-18 STD 0.3 2 0.75 0.1 2 2N4852 2N4852 2N4852 2N4852 TO-18 STD 0.3 2 0.85 0.1 4 2N4853 2N4853 2N4853 2N4853 TO-18
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Microsemi 07/12/1999 11.5 Kb HTM 81_0.3.htm

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2N2647 N/A PNP Unijunction Transistor

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