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JAN2N2329S Microsemi Corporation Silicon Controlled Rectifier, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, TO-5, 3 PIN visit Digikey Buy
JANTXV2N2329S Microsemi Corporation Silicon Controlled Rectifier, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, TO-5, 3 PIN visit Digikey Buy

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Part : 2N2329 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $4.99 Price Each : $5.49
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Part : 2N2329 Supplier : Solid State Devices Manufacturer : Bristol Electronics Stock : 10 Best Price : $5.3760 Price Each : $10.7520
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Part : 2N2329A Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 610 Best Price : - Price Each : -
Part : JANTX2N2329 Supplier : Microsemi Manufacturer : Bristol Electronics Stock : 9 Best Price : $46.80 Price Each : $46.80
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2N2329 Datasheet

Part Manufacturer Description PDF Type
2N2329 Central Semiconductor Leaded Thyristor SCR Original
2N2329 Microsemi Silicon Controlled Rectifier Original
2N2329 Semelab Bipolar NPNP Device in a Hermetically Sealed TO39 Metal Package Original
2N2329 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan
2N2329 General Electric Semiconductor Data Book 1971 Scan
2N2329 General Electric Semiconductor Data Handbook 1977 Scan
2N2329 Microsemi Scan
2N2329 Motorola Motorola Semiconductor Datasheet Library Scan
2N2329 Motorola The European Selection Data Book 1976 Scan
2N2329 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N2329 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N2329 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
2N2329 N/A GE Transistor Specifications Scan
2N2329 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2N2329 N/A Cross Reference Datasheet Scan
2N2329 N/A Short Form Datasheet and Cross Reference Data Scan
2N2329 N/A Short Form Datasheet and Cross Reference Data Scan
2N2329 N/A Short Form Datasheet and Cross Reference Data Scan
2N2329 N/A Short Form Datasheet and Cross Reference Data Scan
2N2329 N/A Short Form Datasheet and Cross Reference Data Scan
Showing first 20 results.

2N2329

Catalog Datasheet MFG & Type PDF Document Tags

2N2324

Abstract: 2N2329 2N2326A 2N2326AS 2N2328 2N2328S 2N2328A 2N2328AS JAN JANTX JANTXV 2N2329 2N2329S , Vdc VR = 400 Vdc 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru , 2N2329 and 2N2323S thru 2N2329S 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS Max. Unit IFBX1 10 µAdc IKG 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS , thru 2N2329 and 2N2323S thru 2N2329S dv/dt = 0.7 v/µs, R3 = 2 k 2N2323A thru 2N2328A and 2N2323AS
Microsemi
Original
2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2326S 2N2324 JANTXV application 2N2323 MIL-PRF-19500/276

2N2323A

Abstract: 2n2326 2N2323S thru 2N2329S 2N2323A thru 2N2329A VR = 50 Vdc 2N2323AS thru 2N2329AS 2N2323, S, A, AS , , 2N2328S & 2N2329S 2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS , / 2N2329, S/ Unit 2N2323A, S 2N2324A, S 2N2326A, S 2N2328A, S 2N2329A, S Reverse Voltage VRM 50 , Forward Blocking Current R2 = 1 kΩ 2N2323 thru 2N2329 R2 = 2 kΩ 2N2323S thru 2N2329S 2N2323A thru 2N2329A VR = 50 Vdc 2N2323AS thru 2N2329AS 2N2323, S, A, AS VR = 100 Vdc 2N2324, S, A
Aeroflex / Metelics
Original
T0-39 888-641-SEMI

2N2324

Abstract: 2N2323 JANTX ) .22 15 6 15 2N2328A, AS, AU4 300 400 500 400 (3) .22 15 6 15 2N2329, S, U4 2N2329A, AS , 2N2329, S, U4 2N2323A, AS, AU4 2N2324A, AS, AU4 2N2326A, AS, AU4 2N2328A, AS, AU4 2N2329A, AS, AU4 , , THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, AND S AND U4 VERSIONS, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A, AND AS AND AU4 VERSIONS, JAN, JANTX, AND JANTXV , , U4 2N2326, S, U4 2N2328, S, U4 2N2329, S, U4 tp = 8.5 ms max 2N2323A, AS, AU4 2N2324A, AS
DEPARTMENT OF DEFENSE
Original
2N2323 JANTX JANTX 2N2326 JANTX 2N2324A transistor U4 marking u4 diode JAN 2N2328 equivalent MIL-PRF-19500/276H MIL-PRF-19500

2N2328A

Abstract: 2n2329 2N2328A 2N2328AS Qualified Level 2N2329 2N2329S JAN JANTX JANTXV MAXIMUM RATINGS Ratings Sym 2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/ 2N2329,S Unit 2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S Reverse Voltage , VR = 400 Vdc 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru 2N2328AS , thru 2N2329 and 2N2323S thru 2N2329S 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS VGT1 IGT1 VGT1 , seconds dv/dt = 1.8 v/µs, R3 = 1 k 2N2323 thru 2N2329 and 2N2323S thru 2N2329S dv/dt = 0.7 v/µs, R3 = 2 k
Microsemi
Original
2N2329s JANtx 1250C

application 2N2323

Abstract: D 4206 TRANSISTOR TYPES 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, 2N2323S, 2N2324S, 2N2326S, 2N2328S, 2N2329S, 2N2223A , ; following "2N2328" add â'¢'2N2328S"; following "2N2328A" add "2N2328AS; following "2N2329" add "2N2329S , RECTIFIERS), SILICON TYPES (BOTH TX AND NON-TX) 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, 2N2323A, 2N2324A , ,000 ohms; 2N2328, 2N2328A, and 2N2329, RL = 4,000 ohms." PAGE 13 Add the following new paragraph , , 2N2326S, 2N2328S, 2N2329S, 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, D is .500 (12.70 mm) minimum, and .750
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OCR Scan
D 4206 TRANSISTOR DIODE dla 9-F 3S74 MIL-S-19500/276A H2N2323S H2N2324S
Abstract: DIGITRON SEMICONDUCTORS 2N2322(A)-2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as â'HRâ' (high , 2N2326A 2N2327 2N2327A 2N2328 2N2328A 2N2329 Peak repetitive forward voltage VDRM 25 , SEMICONDUCTORS 2N2322(A)-2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR ELECTRICAL , sales@digitroncorp.com www.digitroncorp.com Rev. 20130116 DIGITRON SEMICONDUCTORS 2N2322(A)-2N2328(A), 2N2329 DIGITRON
Original
2N2322A 2N2325 2N2325A

2N2329

Abstract: 2N2327 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits . MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000 Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1 , 2N2328 2N2329 250 300 400 V 350 400 500 V 1.6 Amp 15 Amp PGM , 2N2329 IDRM VT IGT VGT IH Peak Forward Blocking Current (Rated VDRM, TJ =125°C) Forward «
Comset Semiconductors
Original

2N2323

Abstract: 2N2324 Blocking Voltage, Notes 1 and 2 2N2323 2N2324 2N2326 2N2329 Non-Repetitive Peak Reverse Blocking Voltage (t · 5 ms. Notes and 2) 2N2323 2N2324 2N2326 2N2329 RMS On-State Current (All Conduction Angles , . M O T O R O LA T H Y R IS T O R D EVIC E DATA 3-14 2N2323 thru 2N2329 * MAXIMUM RATINGS -
-
OCR Scan

2N2324

Abstract: 2N2322 2N2322 2N2323 2N2324 2N2325 Central 2N2326 2N2327 2N2328 2N2329 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC , Corp. 2N2326 2N2327 2N2328 2N2329 SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
Central Semiconductor
Original
semiconductor 2N2323 semiconductor case marking 16 2N23

RE130

Abstract: 2n2323 o d e C o m m o n to Case G lass-to-Metal B ond for M a xim u m Hermetic Seal 2N2323 thru 2N2329 , Reverse Blocking Voltage, Note 1 , 3-11 2N2323 thru 2N2329 " M A X IM U M RA TIN G S - continued (Tc = 25°C unless otherwise noted
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OCR Scan
RE130

SCR C106Y1

Abstract: ge c106b1 '" 2N1935 â'" â'" 2N2328 2N1S99 C106C1-4 C107C1-4 400 â'" â'" â'" â'" â'" 2N2329 - C106D1-4 CI 0701-4 , '"65 to +85°C 50V 100V .001 C5BR1200 2N2326 1.6A â'"65 to +85°C 100V 200V .001 C5DR1200 2N2329 1.6A â
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OCR Scan
2N2322-29 Z4XL12 Z4XL18 SCR C106Y1 ge c106b1 1N177 2N1932 2N1777A 2N2344 2N877-81 2N1929-35 2N2344-48 2NI1595-99 2S-20O

2N1595

Abstract: 2N2324 SCRs (Continued) IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A 2N2328 2N1599 2N1599A 2N2329 400 CS18D CS18DZ 600 CS18M CS18MZ 800 CS18N CS18NZ IGT
Central Semiconductor
Original
Abstract: 2N2329 Dimensions in mm (inches). Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021) dia. IC = 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100 Semelab
Original

2N3555

Abstract: 2N4110 SFS1829 2N6337 2N2329 2N2329A 2N3276 Contact SSDI for higher voltage units.
-
OCR Scan
2N4212 2N3005 2N3555 2N6332 2N6607 2N3003 2N4110 2n2009 2N2009 2N948 2N885A 2N6605 2N2683

BTX30-500

Abstract: btx30-100 300V BTX30-300 2N2328 2N2328A 400V BTX30-1+00 2N2329 2N2329A TAG611-400 TAG612-400 TAG613
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OCR Scan
TAG612-100 BTX30-200 TAG606-200 TAG606-400 BTX30-500 BTX30-600 btx30-100 TAG606 BTX30 BTX30- BTX30-100 TAG611-100 TAG613-100 TAG614-100

2n1596

Abstract: 2N1595 SCRs (Continued) IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A 2N2328 2N1599 2N1599A 2N2329 400 CS18D CS18DZ 600 CS18M CS18MZ 800 CS18N CS18NZ IGT
Central Semiconductor
Original

2N2323

Abstract: 2N2329 PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 BACKSIDE ANODE 145 Adams
Central Semiconductor
Original
Abstract: PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000à Back Side Metalization Al/Mo/Ni/Ag - 20,000Ã/5,000Ã/5,000Ã/2,000à GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 CS223 Central Semiconductor
Original
CS223-4M

brx49

Abstract: Thyristors BRX49 Philips Semiconductors Concise Catalogue 1996 Small-signal transistors THYRISTORS type number V rrm max. (V) LEADED TYPES 2N881/PH 2N2329 BRX44/PH BRX45/PH BRX46/PH BRX47/PH BRX48/PH BRX49/PH 200 400 30 60 100 200 300 400 ' trm max. (A) 'ts m SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS V gt 'h V GT !GT package max. (A) 6 16 6 6 6 6 6 6 min. (V) 0.8 2.0 0.9 0.9 0.9 0.9 0.9 0.9 max. (mA) max. (V) 0.8 2 0.9 0.9 0.9 0.9 0.9 0.9 max. (HA) 0.6
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OCR Scan
brx49 Thyristors BRX49

2N2329

Abstract: 2N2329 Dimensions in mm (inches). Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021) dia. IC = 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100
Semelab
Original

TD6001S

Abstract: 2N2322 '" 2N1935 â'" â'" 2N2328 2N1S99 C106C1-4 C107C1-4 400 â'" â'" â'" â'" â'" 2N2329 - C106D1-4 CI 0701-4 , '"65 to +85°C 50V 100V .001 C5BR1200 2N2326 1.6A â'"65 to +85°C 100V 200V .001 C5DR1200 2N2329 1.6A â
-
OCR Scan
TD6001S thomson ms 250 ET 191 la 78140 marking ALP TDB001S-TD 6001S

scr tag 2 200

Abstract: scr 106d SFS1829 2N6337 2N2329 2N2329A 2N3276 Contact SSDI for higher voltage units.
-
OCR Scan
TAG605-400 27-600R scr tag 2 200 scr 106d SCR bt 107 BSTB0246 SCR BRX 49 TAG615-100 TAG605-100 TAG606-100 TAG611-200 TAG612-200 TAG613-200

2N2322-29

Abstract: GE C5U PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000à Back Side Metalization Al/Mo/Ni/Ag - 20,000Ã/5,000Ã/5,000Ã/2,000à GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 CS223
-
OCR Scan
GE C5U rgk 20/2 C103 C106 C106Q1 C107 2N5060-64 2N1595-99 II111I811S
Showing first 20 results.