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2N2222AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy
2N2222AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy
2N2222AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy
2N2222A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN visit Digikey Buy
2N2222AUB Microsemi Corporation Transistor visit Digikey Buy
2N2222AUA Microsemi Corporation Transistor visit Digikey Buy

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2N2222 Datasheet

Part Manufacturer Description PDF Type
2N2222 Micro Commercial Components TRANS GP BJT NPN 30V 0.8A 3TO-18 - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222 On Semiconductor Bipolar Transistor, General Purpose Transistors NPN Silicon - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222 Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
2N2222 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222 Semico Chip Type 2C2222A Geometry 0400 Polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222 Siemens Cross Reference Guide 1998 Original
2N2222 STMicroelectronics HIGH-SPEED SWITCHES - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222 STMicroelectronics NPN Bipolar Transistor; Small Signal; Package: TO-18; Collector Emitter Voltage, V(br)<sub>CEO</sub>: 40V; Continuous Collector Current, I<sub>C</sub>: 0.6A; Collector Emitter Saturation Voltage, V<sub>CE(sat)</sub>: 1V; DC Current Gain Min (hfe): 50 Original
2N2222 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N2222 Bharat Electronics Transistor Selection Guide Scan
2N2222 Central Semiconductor General Purpose Bipolar Transistor, NPN, 30V, TO-18, 3-Pin - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Scan
2N2222 Continental Device India Semiconductor Device Data Book 1996 Scan
2N2222 Continental Device India Silicon Planar Switching Transistor Scan
2N2222 Crimson Semiconductor Transistor Selection Guide Scan
2N2222 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N2222 Dionics NPN Si Transistor Scan
2N2222 Fairchild Semiconductor NPN small signal general purpose amplifier & switch. - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Scan
2N2222 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N2222 Ferranti Semiconductors Shortform Data Book 1971 Scan
Showing first 20 results.

2N2222

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NPN 2N2222 ­ 2N2222A PNP 2N2907 ­ 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2222 and , Value 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 Unit 40(1) 30 75 60 6 5 V V V 800 mA , 2N2222 2N2222A 2N2222 Unit 350 K/W 146 K/W 1/3 NPN 2N2222 ­ 2N2222A PNP 2N2907 ­ , IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 Comset Semiconductors
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2N2222 npn small signal current gain Transistor 2N2222A 2N2222 pnp transistor 2N2222 2N2222 capacitance tr 2n2222 100MH
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ) Dated : 07/12/2002 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max , 2N2222A hFE 40 - - - Collector Cutoff Current ST 2N2222 at VCB=50V ST ICBO - - 0.01 uA at VCB=60V 2N2222A ICBO - - 0.01 uA ST 2N2222 V(BR Semtech Electronics
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2N2222A plastic package 2N2222A plastic 2N2222 hfe 2n2907 to92 2N2222A TO-92 OF transistor 2N2222 to-92
Abstract: 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Unit Value ST 2N2222 ST 2N2222A , to +150 O G S P FORM A IS AVAILABLE C C 2N2222 / 2N2222A Characteristics at Tamb=25 OC , 2N2222 at VCB=50V ST ICBO - - 0.01 ÂuA at VCB=60V 2N2222A ICBO - - , V ST VCE(sat) - - 0.3 V 2N2222A VCE(sat) - - 1.6 V ST 2N2222 Bytes
Original
2N2222 - to-92 2N2222 NPN Transistor to 92 transistor 2n2222a to-92 2N2222 transistor 2n2222a to 92 npn transistor to 92 2n2222
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Unit Value ST 2N2222 ST 2N2222A , : 07/12/2002 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max , 2N2222A hFE 40 - - - Collector Cutoff Current ST 2N2222 at VCB=50V ST ICBO - - 0.01 uA at VCB=60V 2N2222A ICBO - - 0.01 uA ST 2N2222 V(BR Semtech Electronics
Original
pin configuration transistor 2N2222 Transistor 2N2222 NPN TO92 OF transistor 2N2222 Datasheet 2N2222 transistor npn 2n2222 transistor
Abstract: !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2222A (VCB=60Vdc, IE=0) (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC Micro Commercial Components
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2n2222 2n2222A 2N2222, 2N2222A ic 4521 2N2222 application note J 2N2222 mw 4953
Abstract: MAXIMUM RATINGS Rating Symbol 2N2221 2N2222 2N2221A 2N2222A Unit Collector-Emitter Voltage , Operating and Storage Junction Temperature Range tJ- Tslg -65 to +200 UC 2N2221 2N2221A* 2N2222 2N2222A , CHARACTERISTICS Collector-Emitter Breakdown Voltage Ic = 10 mAdc, IB= 0 2N2221, 2N2222 2N2221A, 2N2222A V(BR)CEO 30 40 Vdc Collector-Base Breakdown Voltage Ic = 10 nAdc, IE= 0 2N2221, 2N2222 2N2221A, 2N2222A V(BR)CBO 60 75 Vdc Emitter-Base Breakdown Voltage IE = 10 nAdc, lc= 0 2N2221, 2N2222 2N2221A, 2N2222A V -
OCR Scan
2N2222A JANTX 2N2222A JANTXV BR 2N2222A NPN 2N2222A JAN 2n2222 jan 2N222
Abstract: 2N2222 NPN LM8543PWM PWM32 LM85 +12V +12V 470 6.2k TAC Pentium 4 Processor 4.3k 100 , 0.1 uF 0.01 2N2222 PWM TACH4/ AddSel 2.5V 100 pF 470 PWM2 100 pF 3.3V STBY 2N2222 +12V +12V 6.2k TACH2 REMOTE2- Processor Core Voltage 2.5V Supply 12V , 470 TAC 470 +12V +12V 6.2k From Processor VRM 6.8k SMBDAT GND 2N2222 PWM 6.2k SMBCLK I/O Controller Hub SMBus 4.3k 4.3k TAC 36 0.01 PWM 2N2222 Figure National Semiconductor
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3PWMLM855 LM853 3LM85 2PWM100 LM85PWM 2n2222 national semiconductor lm 3904 national 2n2222 2N2222 national 1LM85 PWM100
Abstract: SEMICONDUCTOR I te c h n ic a l d a ta 2N2222. 2N2222A NPN Silicon Small-Signal Transistors , , 2N 2221A 2N2222. 2N2222A 2N2221, 2N2221A 2N2222, 2N2222A 2N2221.2N2222 2N2221 A, 2N2222A 2N2221 , = 10 ^Adc) 2N2221, 2N2222 2N2221 A, 2N2222A v (BR)EBO 2N2221, 2N2222 2N2221 A, 2N2222A >CES 2N2221, 2N2222 2N2221 A, 2N2222A 10 10 50 60 jiAdc v (BR)CEO 2N2221. 2N2222 2N2221 A, 2N2222A V(BR)CBO 60 75 30 , ) ON CHARACTERISTICS DC Current Gain (Iq = 0.1 mAdc. Vq e = 10 Vdc) 2N2221 2N2222 2N2221A 2N2222A (*C = -
OCR Scan
st 2n2222a 2N2222 base capacitance 2N2221-2N2222 2N2222A st ST 2n2222 2n2222 t
Abstract: base 2N2222; 2N2222A DESCRIPTION collector, connected to case QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A VcEO collector-emitter voltage 2N2222 2N2222A !c , 2N2222 2N2222A turn-off time = 150 mA; = 15 mA; = -1 5 mA 75 hpE ft MHz MHz ns toff l Bon , SYMBOL VcBO PARAMETER collector-base voltage 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A v ebo 2N2222; 2N2222A CONDITIONS open emitter - MIN. MAX. UNIT 60 75 30 40 5 6 -
OCR Scan
2n2222 h parameter values 2N2222 NPN Transistor features 2n2222 ti 2n2222 transistor pin b c e transistor 2N2222 PHILIPS 2N2222 circuit
Abstract: !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC Micro Commercial Components
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Abstract: Street Chatsworth !"# $ % !"# 2N2222 2N2222A NPN Switching Transistors Rating 2N2222 2N2222A , 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW W K/W K/W Units IC , current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB=60Vdc, IE=0,TA , .016 .021 0.406 0.533 NOTE TYP www.mccsemi.com Version: 3 2003/02/25 2N2222,2N2222A MCC , =10Vdc,IE=ie=0, f=1.0MHz) TransitionFrequency (VCE=20Vdc,IC=20mAdc, f=100MHz) 2N2222 2N2222A NF Noise Figure Micro Commercial Components
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Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit at IC , 2N2222 hFE 30 - - - ST 2N2222A hFE 40 - - - at VCB=50V ST 2N2222 ICBO - - 0.01 uA at VCB=60V ST 2N2222A ICBO - - 0.01 uA ST 2N2222 Semtech Electronics
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ST 2n2222 datasheet 2n2222a transistor 2N2222 transistor datasheet pin configuration transistor 2N2222A 2n2222 to92 power transistor 2n2222
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors , . MAX. UNIT open emitter - 60 V - 75 V 2N2222 - 30 V 2N2222A - , MHz - 250 ns 2N2222 2N2222A VCEO collector-emitter voltage open base IC , V fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 2N2222A toff , Product specification NPN switching transistors 2N2222; 2N2222A LIMITING VALUES In accordance Philips Semiconductors
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MAM264 2N2222A 0612 2n2222 iv for transistor 2N2222 C2N2222A Metal 2n2222 operation of 2n2222 SCA54
Abstract: MCC TM Micro Commercial Components 2N2222 2N2222A #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 , Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage 5.0 6.0 , =0) 2N2222 (VCB=50Vdc, IE=0,TA=150к) 2N2222A (VCB=60Vdc, IE=0) (VCB=60Vdc, IE=0,TA=150к) Emitter , 2011/01/01 MCC 2N2222,2N2222A TM Micro Commercial Components Symbol Parameter Min -
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2N2222 application notes 2N2222 LEAD FREE
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit at IC , 2N2222 hFE 30 - - - ST 2N2222A hFE 40 - - - at VCB=50V ST 2N2222 ICBO - - 0.01 uA at VCB=60V ST 2N2222A ICBO - - 0.01 uA ST 2N2222 Semtech Electronics
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NPN transistor 2n2222A plastic package of 2N2222A transistor 2n2222A plastic package 2n2222 npn switching transistor
Abstract: MCC 2N2222 2N2222A omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage 5.0 6.0 , 2N2222,2N2222A Symbol Parameter Min Max Units 2N2222 - 400 1.6 mVdc Vdc 2N2222A - 300 1.0 mVdc Vdc 2N2222 - 1.3 2.6 Vdc Vdc 2N2222A 0.6 Micro Commercial Components
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J 2N2222A ns 2n2222a npn 2n2222 V2N2222 2N2222 datasheet 2N2222A Data Sheet
Abstract: -18 jFL CASE TO-92A Q CBE 2N2222 . 2N2222Ã' EBC PN2222 PN2222A 2N2222 2N2222A PN2222 PN2222A ,  A â I 2N2222 PN 2222 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON , ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907» PN2907A RESPECTIVELY. THE 2N2222, 2N2222A , .^. 3-41032J - - - Continued - - - PARAMETER SYMBOL 2N2222 PN2222 MIN MAX 2N2222A PN2222A MIN MAX UNIT , vs TA 2.Or 1.5 Ptot (W) 1.0 0.5 r. 2N2222 2N2222A I V -
OCR Scan
3N2222A PN 2n2222A 3n2222 2K2222 2N2222-PN2222 2K222 VCB-50V VCB-60V TA-150OC 2K2222/A FN2222/A VBB--23
Abstract: 2N2222 2N2222A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Maximum Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage , 1.168 .016 .021 0.406 0.533 www.cnelectr.com NOTE TYP 2N2222,2N2222A Symbol Parameter Min Max Units 2N2222 - 400 1.6 mVdc Vdc 2N2222A - 300 1.0 Shanghai Lunsure Electronic
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2n2222 equivalent 2N2222A TO-18 2n2222 data sheet datasheet of 2N2222A equivalent of 2n2222 2n2222 npn
Abstract: 2N2222.A Unit Thermal Resistance, Junction to Ambient RÃJA 219 437.5 °c/w Thermal Resistance, Junction to Case R0JC 58 145.8 °c/w 2N2218A,2N2219,A* 2N2222,A* 2N2218, A/2N2219,A CASE 79-04 TO-39 (TO , f MAXIMUM RATINGS , , 2N2222,A 20 50 _ (lC = 500 mAdc, VC£ = 10Vdc)(1) 2N2219, 2N2222 2N2218A 2N2219A, 2N2222A 30 25 40 â , Vdc Collector Current â'" Continuous ic 800 800 mAdc 2N2218A 2N2219,A 2N2222,A Total Device -
OCR Scan
2N2222A motorola equivalent transistor 2N2222 s parameters of 2N2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola
Abstract: !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC Micro Commercial Components
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Abstract: Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage fc = 10 mA 2N2221, 2N2222 2 N 2221 A, 2 N 2222 A , lc = 500 mA, /B = 50 mA 2N2221, 2N2222 2 N 2221 A, 2 N 2222 A Basis-Sattigurigsspannung Base -
OCR Scan
n22222 npn 2222 transistor npn 2222 2222a n2222 2n22222
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ) Dated : 07/12/2002 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max , =10V ST 2N2222 hFE 100 - 300 - at IC=500mA, VCE=10V ST hFE 30 - - - 2N2222A hFE 40 - - - Collector Cutoff Current ST 2N2222 at VCB=50V ST ICBO -
OCR Scan
2221-2N A2222 2222 kn a amd 2907 2N 2222 LTNH
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit at IC , 2N2222 hFE 30 - - - ST 2N2222A hFE 40 - - - at VCB=50V ST 2N2222 ICBO - - 0.01 uA at VCB=60V ST 2N2222A ICBO - - 0.01 uA ST 2N2222 -
OCR Scan
2N2222 z parameters 2n2222 test circuit 2N2219A equivalent output impedance of 2N2222
Abstract: !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC -
OCR Scan
1N916 tl 2n2222 2N2222 TO-18 2N2222 r4 2N2222AJ 2N2222 data S3T31 11BIVI
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