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2N2219AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
2N2219A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
2N2219A Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
2N2219A PBFREE Central Semiconductor Corp TRANS NPN 40V 0.8A TO-39 visit Digikey Buy
JANTX2N2219AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JAN2N2219A Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy

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2N2219A Datasheet

Part Manufacturer Description PDF Type
2N2219A Boca Semiconductor NPN SILICON PLANAR SWITCHING TRANSISTORS - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A Micro Commercial Components SMALL SIGNAL BIPOLAR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 800MA TO-39 Original
2N2219A Microsemi SWITCHING TRANSISTOR JAN, JANTX, JANTXV - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A Microsemi Gneral Purpose Bipolar Transistor, NPN, 50V, TO-39, 3-Pin - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A New England Semiconductor BJT, NPN, Switching Transistor, IC 0.8A - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A On Semiconductor 2N2219 - TRANSISTOR 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, BIP General Purpose Small Signal Original
2N2219A On Semiconductor Bipolar Transistor, General Purpose Transistors NPN Silicon - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A Philips Semiconductors Silicon Planar Epitaxial Transistor Original
2N2219A Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A Semico Chip: 6.0V geometry 0400 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A Semico Type 2N2219A Geometry 0400 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A Semico Chip: geometry 0400 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A STMicroelectronics Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 800MA TO-39 Original
2N2219A STMicroelectronics Silicon NPN Transistor Original
2N2219A STMicroelectronics HIGH SPEED SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219A STMicroelectronics HIGH SPEED SWITCHES Original
2N2219A STMicroelectronics HIGH SPEED SWITCHES Original
2N2219A Central Semiconductor Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Scan
Showing first 20 results.

2N2219A

Catalog Datasheet MFG & Type PDF Document Tags

2N2219

Abstract: 2N2219A , 2N2219A, 2N2219A, 2N2219AL, JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics , mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218, A, 2N2218AL 2N2219, A, 2N2219AL 2N2218, A, 2N2218AL 2N2219, A, 2N2219AL 2N2218, 2N2219 2N2218A, L, 2N2219A, L 2N2218, 2N2219 , TECHNICAL DATA 2N2218, 2N2218A JAN, JTX, JTXV 2N2218AL JAN, JTX, JTXV 2N2219, 2N2219A JAN, JTX
New England Semiconductor
Original
Transistor 2N2219A 2n2219a npn transistor Transistor 2N2218a 2N2218-2N2219 MIL-PRF-19500/251

2N2219

Abstract: 2N2219 transistor 2N2218A 2N2218AL Qualified Level JAN JANTX JANTXV JANS 2N2219 2N2219A 2N2219AL MAXIMUM , ; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218; A; 2N2218AL 2N2219; A; 2N2219AL 2N2218; A; 2N2218AL 2N2219; A; 2N2219AL 2N2218; 2N2219 2N2218A; L; 2N2219A; L 2N2218; 2N2219 2N2218; L; 2N2219A; L 2N2218; 2N2219 , Temp. Range 2N2218 2N2219 2N2218A; L 2N2219A; L 30 60 5.0 50 75 6.0 VCEO VCBO
Microsemi
Original
2N2219 transistor transistor 2n2218 datasheet 2N2219 JANTX transistor 2N2219 data sheet 2N2219 JANTXV 2N2218 transistor N2218

2N2905 2N2219

Abstract: 2n2219 current (max. 800 mA) · Low voltage (max. 40 V). 2N2219; 2N2219A PINNING PIN 1 2 3 emitter base , REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage 2N2219 2N2219A collector-emitter voltage 2N2219 2N2219A collector current (DC) total power dissipation DC current gain transition frequency 2N2219 2N2219A turn-off time T"amb - 25 CONDITIONS open emitter - MIN. MAX. 60 75 30 40 800 800 250 , System (IEC 134). 2N2219; 2N2219A SYMBOL VcBO 2N2219 2N2219A V CEO PARAMETER collector-base
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OCR Scan
2N2905 2N2219 2N2905A RS 2N2219A philips 2N2219 2N2905 UHF power TRANSISTOR PNP TO-39 2N2905 2N2905A LB826

2N2219A

Abstract: 2N2218A NPN 2N2218A ­ 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2218A and 2N2219A are NPN , ° TJ Junction Temperature TStg Storage Temperature range Value 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A Unit 40 V 75 V 6 V 800 mA 0.8 Watts 3 Watts 175 °C , Value 2N2218A 2N2219A 2N2218A 2N2219A Unit 50 °C/W 187.5 °C/W 1/3 NPN 2N2218A
Comset Semiconductors
Original
NPN 2N2219A IC150

2N2219

Abstract: 2N2219 transistor 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings , mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218; A; 2N2218AL 2N2219; A; 2N2219AL 2N2218; A; 2N2218AL 2N2219; A; 2N2219AL 2N2218; 2N2219 2N2218A; L; 2N2219A; L 2N2218; 2N2219 , Top, Tstg 2N2218 2N2219 30 60 5.0 2N2218A; L 2N2219A; L 50 75 6.0 Unit Vdc Vdc Vdc mAdc W
Microsemi
Original
NPN transistor transistor 2N2219 transistor 2n2218 transistor all TO-5 PACKAGE power transistor JAN2N2218L JANTXV2N2219L 2N2218L

2N2219

Abstract: 2N2218-2N2219 500 mAdc, IB = 50 mAdc 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218, A , Current Total Power Dissipation 2N2218 2N2219 2N2218A; AL 2N2219A; AL 30 60 5.0 50 75 , , 2N2218A 2N2219, 2N2219A TO- 39 (TO-205AD) THERMAL CHARACTERISTICS Characteristics Thermal , mW/ C for TA > +25 C 2) Derate linearly 17.0 mW/0C for TC > +250C 2N2218AL, 2N2219AL TO
New England Semiconductor
Original
for 2n2218a

2n2219

Abstract: 2N2219 transistor MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , , VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 20 35 30 50 IC = 1.0mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 25 50 35 75 IC = 10mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL IC = 150mAdc, VCE = 10Vdc , Symbol 2N2218 2N2219 2N221A; L 2N2219A; L Unit Collector-Emitter Voltage VCEO 30
Microsemi
Original
JANSR2N2219 2N2218A-2N2219A JANSR2N2218 T4-LDS-0091 100MH

Transistor Equivalent list for 2n2218

Abstract: 2n2218 application note , SWITCHING, TYPES 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, AND 2N2219AL, JAN, JANTX, JANTXV, JANS, JANSM , , 2N2219A 2N2218AL, 2N2219AL PT TA = +25°C (1) W PT TC = +25°C (1) W VCBO VCEO VEBO , 2N2219A 2N2218AL 2N2219AL 20 30 20 30 20 30 ton pF Min 2N2218 2N2219 2N2218A 2N2219A , Collector to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3036 Condition , , 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3061 Breakdown voltage, collector to emitter 2N2218
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Original
Transistor Equivalent list for 2n2218 2n2218 application note 2N2219 transistor substitute 2n2219 application equivalent for 2N2219 2N2219 JANTX die MIL-PRF-19500/251R MIL-PRF-19500/251P MIL-PRF-19500

2N2222A

Abstract: 2N2219A 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and , saturation voltage. 2N2219A approved to CECC 50002-100, 2N2222A approved to CECC 50002-101 available on , otal Dissipation at Tamb 25 C for 2N2219A for 2N2222A at T ca se 25 oC for 2N2219A for 2N2222A
STMicroelectronics
Original
Transistor 2N2222A NPN transistor 2n2222A 2N2222A npn transistor 2n2222a transistor 2N2222a datasheet 2N2222A Schematic symbol

2n2219 equivalent

Abstract: 2N2219 MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , ; 2N2219A / AL 2N2218A; 2N2219A / AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL , 2N2219A; L 50 Unit Vdc Top, Tstg 800 0.8 3.0 -55 to +200 mA W W °C Symbol Value , Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A Note: (1) Derate
Microsemi
Original
2n2219 equivalent equivalent transistor of 2n2219a similar 2N2219 transistor 2n2219 equivalent transistor 2N2219A equivalent equivalent 2N2219

2N2219 transistor

Abstract: Transistor 2N2219A N AUER PHILIPS/DISCRETE blE D I I bbSBSBl A â¡â¡20061 341 ZNZZW 2N2219A IAPX SILICON , . and v.h.f./u.h.f. amplifiers. QUICK REFERENCE DATA 2N2219 2N2219A Collector-base voltage (open , Manufacturer 1 1 N AMER PHILIPS/DISCRETE biE D m bb531Bl D02ÃG6E EfiS HAPX 2N2219 2N2219A ^ V , ) 2N2219 2N2219A Collector-base voltage (open emitter) VCBO max. 60 75 V Collector-emitter voltage , specified 2N2219 2N2219A Collector cut-off current lE = 0; VCB = 50V ICBO < 10 - nA IE = 0
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OCR Scan
1N916 2N221 Silicon Epitaxial Planar Transistor philips 9L9V 200J1 7Z88673 7Z85736 200S2

2n2219

Abstract: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon http://onsemi.com , , 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol , , Duty Cycle ≤ 2.0%. http://onsemi.com 2 ton toff ns ns 2N2219, 2N2219A, 2N2219AL , _BSC 0.200 BSC -0.050 0.054 BSC -0.030 0.100 - 2N2219, 2N2219A, 2N2219AL PACKAGE , , 2N2219A) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Stresses
ON Semiconductor
Original
205AB 205AA JAN2N2219/A JANTX2N2219/A JANTXV2N2219/A JANTX2N2219AL

2N2219

Abstract: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features http , /D 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , (sat) Vdc Cobo Cibo pF pF toff ns http://onsemi.com 2 2N2219, 2N2219A, 2N2219AL , . COLLECTOR http://onsemi.com 3 2N2219, 2N2219A, 2N2219AL PACKAGE DIMENSIONS TO-39 3-Lead CASE 205AB , TO-39 CASE 205AB (2N2219, 2N2219A) THERMAL CHARACTERISTICS Characteristic Thermal Resistance
ON Semiconductor
Original
JANTXV2N2219AL 2N2219/D
Abstract: SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO -39 (for 2N2218A and 2N2219A) and in Jedec TO -18 (for 2N2221A and , leakage currents and low saturation voltages. 2N2218A/2N2219A approved to CECC 50002-100, 2N2221A , V 0.8 A 2N2219A 2N2222A 0.8 0.5 W W 2N2219A 2N2222A 3 1.8 W W , j-am b à 3 5 -1 1 2N2218A 2N2219A S -T H O M S O N Thermal Resistance Junction-case -
OCR Scan
2N2218A/2N2219A 2N2221A/2N2222A N2218A

2N2222A st

Abstract: st 2n2222a ® 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are , Current Total Dissipation at Tamb 25 oC for 2N2219A for 2N2222A at T cas e 25 oC for 2N2219A for 2N2222A , 175 Unit V V V A W W W W o o T stg Tj March 2002 C C 1/8 2N2219A/2N2222A THERMAL DATA T O , mA f = 300MHz V CE = 20 V Pulsed: Pulse duration = 300 µs, duty cycle 1 % 2/8 2N2219A
STMicroelectronics
Original
2N2222A st st 2n2222a 2N2219A st 2N2222A TO-18 2N2219A/2N2222A P008B
Abstract: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They , Ju n c tio n T e m p e ra tu re 175 1/8 2N2219A/2N2222A THERMAL DATA T O -3 9 R th j-c a , L U LU O o o o o o O hfe* > > > > > > > h FE* 0.3 1 Vce = 20 V 2N2219A , : Pulse duration = 300 jxs, duty cycle < 1 % * * See test circuit 3/8 2N2219A/2N2222A -
OCR Scan

2n2219

Abstract: 2N221B SEMICONDUCTOR TECHNICAL DATA 2N2219« 2N2219A ' _ S ^ J Î L0NCS 2805 Vet«ra/>s Highway , 2N2218A. 2N2219A v {BR )C B O 2N 2218,2N 2219 2N2218A, 2N2219A v (B R )E B O 2N2218 2N2219 2N2218A. 2N 2219A `C E S 2N2218. 2N2219 2N2218A, 2N2219A 0.01 0.01 (continued] 5.0 60 60 75 30 50 Vdc Vdc Sym bol , ) Ta = 150 C ; (V c B = 50 Vdc)
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OCR Scan
2N2210 2N221B 221SA 2N2219JAN

2n2219

Abstract: 2n2219 application 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features http , : 2N2219/D 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , (sat) Vdc Cobo Cibo pF pF toff ns http://onsemi.com 2 2N2219, 2N2219A, 2N2219AL , . COLLECTOR http://onsemi.com 3 2N2219, 2N2219A, 2N2219AL PACKAGE DIMENSIONS TO-39 3-Lead CASE 205AB , TO-39 CASE 205AB (2N2219, 2N2219A) Stresses exceeding Maximum Ratings may damage the device
ON Semiconductor
Original
JAN2N2219 JANTX2N2219

2n2219

Abstract: 2n2219 equivalent MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218; A; AL 2N2219; A; AL Min. hFE 2N2218; A; AL 2N2219; A; AL 20 35 , ; L 2N2219A; L 50 Unit Vdc Top, Tstg 800 0.8 3.0 -55 to +200 mA W W °C Symbol , Thermal Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A Note: (1
Microsemi
Original

2n2219

Abstract: 2N2905 2N2219 application DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N2219; 2N2219A NPN switching transistors , ; 2N2219A FEATURES PINNING · High current (max. 800 mA) PIN · Low voltage (max. 40 V). , - 75 V 2N2219 - 30 V 2N2219A VCEO - 2N2219A - 40 V - , MHz 2N2219A 300 - MHz - 250 ns toff turn-off time 1997 Sep 03 ICon = , switching transistors 2N2219; 2N2219A LIMITING VALUES In accordance with the Absolute Maximum Rating
Philips Semiconductors
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2N2905 2N2219 application reference du transistor 2N2219 c2n2219 2n2219 philips 2N-2219A philips 2n2219 st MAM317 SCA55

2N2219

Abstract: 2N2218 2N2219A 6 V â'¢Pulsed t = 200/as 6 , 2218,A 2N 2219,A 40 120 100 300 VCE=10V lc = 500 mA 2N 2218 2N 2219 20 30 2N 2218 A 2N2219A 25
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OCR Scan
2219a 2n22191 F2N2219 2n 2219 H12B NPN 2N 2219

2222A

Abstract: 2221A 2N 2218 A 2N 2219 A 2N 2221A SILICON PLANAR NPN â  HIGH-SPEED SWITCHES The 2N 2218A, 2N-2219A, 2N 2221 A and 2N 2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N 2218A and 2N 2219A) and in Jedec TO-18 (for 2N 2221A and 2N 2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mAr and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. ABSOLUTE MAXIMUM
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OCR Scan
2222A 2221A 2n h 2222a 2222a NPN 2222A transistors

2N2222A motorola

Abstract: 2n2222 motorola Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A 2N2222A , Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N2219 2N2219A 2N2222 , ,A, 2N2222,A 2N2219,A, 2N2222,A 2N2219, 2N2222 2N2219A, 2N2222A Collector ­ Emitter Saturation , ) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT All Types, Except 2N2219A, 2N2222A Output
Motorola
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2N2222A motorola 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 205AD 206AA

2222a

Abstract: 2n h 2222a SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO -39 (for 2N2218A and 2N2219A) and in Jedec TO -18 (for 2N2221A and , leakage currents and low saturation voltages. 2N2218A/2N2219A approved to CECC 50002-100, 2N2221A , V 0.8 A 2N2219A 2N2222A 0.8 0.5 W W 2N2219A 2N2222A 3 1.8 W W , j-am b à 3 5 -1 1 2N2218A 2N2219A S -T H O M S O N Thermal Resistance Junction-case
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OCR Scan
2218A tr 2222a tr 2219a z222a kn 2222a 2n 2222a

2N2222

Abstract: s parameters of 2N2222 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They , Ju n c tio n T e m p e ra tu re 175 1/8 2N2219A/2N2222A THERMAL DATA T O -3 9 R th j-c a , L U LU O o o o o o O hfe* > > > > > > > h FE* 0.3 1 Vce = 20 V 2N2219A , : Pulse duration = 300 jxs, duty cycle < 1 % * * See test circuit 3/8 2N2219A/2N2222A
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OCR Scan
s parameters of 2N2222 2n2222 equivalent 2N2222 z parameters equivalent of 2n2222 2n2222 test circuit output impedance of 2N2222
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