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| Part Number | Manufacturer | Description | |||||
| 1. |  2N1711 |
Semelab | Low Frequency Silicon Power NPN Transistor | 49.88 Kb | 1 Pg. | ||
| 2. | 2N1711 |
ST Microelectronics | SWITCHES AND UNIVERSAL AMPLIFIERS - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 | 60.28 Kb | 5 Pg. | ||
| 3. | 2N1711 |
Semelab | Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Bipolar NPN Device - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 | 10.56 Kb | 1 Pg. | ||
| 4. | 2N1711 |
Raytheon Company | Selection Guide 1977 | 95.01 Kb | 2 Pg. | ||
| 5. | 2N1711 |
ST Microelectronics | Shortform Data Book 1988 | 38.25 Kb | 1 Pg. | ||
| 6. | 2N1711 |
Ferranti Semiconductors | Quick Reference Guide 1985 | 40.25 Kb | 1 Pg. | ||
| 7. | 2N1711 |
Thomson-CSF | Shortform Semiconductor Catalogue 1982 | 126.58 Kb | 1 Pg. | ||
| 8. | 2N1711 |
Motorola, Inc. | European Master Selection Guide 1986 | 64.88 Kb | 2 Pg. | ||
| 9. | 2N1711 |
ZaeriX | Short Form Data Catalogue 1972-73 | 46.71 Kb | 1 Pg. | ||
| 10. | 2N1711 |
Crimson Semiconductor | Transistor Selection Guide | 1453.37 Kb | 36 Pg. |
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| 1. |  27.84 Kb • 2 Pages |
Abstract: ... MAXIMUM RATINGS Ratings Symbol 2N1711 2N1890 Units. Collector-Emitter Voltage VCEB 50 80 Vdc. Collector-Base Voltage VCBO 75 100 Vdc. Emitter-Base Voltage VEBO 7.0 Vdc. Collector Current IC 500 ... Labels: 2N1711 |
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| 2. |  54.3 Kb • 3 Pages |
Abstract: ... Ratings Symbol 2N1711 2N1890 Unit. Collector-Base Voltage VCBO 75 100 Vdc. Emitter-Base Voltage VEBO 7.0 Vdc. Collector Current IC 500 mAdc. Total Power Dissipation @ TA = +250C (1) @ TC = +25. 0C (2) PT ... Labels: 2N1711 |
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| 3. |  49.8 Kb • 2 Pages |
Abstract: ... Ratings Symbol 2N1711 2N1890 Unit. Collector-Base Voltage VCBO 75 100 Vdc. Emitter-Base Voltage VEBO 7.0 Vdc. Collector Current IC 500 mAdc. Total Power Dissipation @ TA = +250C (1) @ TC = +25. 0C (2) PT ... Labels: 2N1711 |
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| 4. |  60.29 Kb • 5 Pages |
Abstract: ... The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The ... Labels: 2N1711 |
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| 5. |  45.58 Kb • 4 Pages |
Abstract: ... The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used ... Labels: 2N1711 |
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| 6. |  10.57 Kb • 1 Pages |
Abstract: ... 2N1711. Bipolar NPN Device. VCEO = 50V IC = 0.5A. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications ... Labels: 2N1711 |
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| 7. |  48.45 Kb • 8 Pages |
Abstract: ... 2N1711 NPN medium power transistor. book, halfpage. M3D111. 1997 May 28 2. Philips Semiconductors Product specification. NPN medium power transistor 2N1711. FEATURES. • High current (max. 500 mA) ... Labels: 2N1711 |
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| 8. |  4.5 Kb • 1 Pages |
Abstract: ... 2N1711 TO-39 50 500 800 100 300 70 ‐ ‐ 113. 2N1893 TO-39 80 500 800 40 120 ‐ ‐ ‐ 115. 2N3019 TO-39 80 1000 800 100 300 100 ‐ ‐ 146. BC140 TO-39 40 1000 3700 63 250 50 ‐ BC160 225. BC140-10 TO-39 40 1000 3700 63 160 50 ... Labels: 2N1711 |
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| 9. |  134.37 Kb • 4 Pages |
Abstract: ... Order this document by 2N1711/D. SEMICONDUCTOR TECHNICAL DATA. CASE 79‐04, STYLE 1 TO‐39 (TO‐205AD) 1. 2. 3. Ω Motorola, Inc. 1996. COLLECTOR 3. 2. BASE. 1. EMITTER. (Replaces 2N718A/D) ARCHIVE INFORMATION ... Labels: 2N1711 |
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| 10. |  106.09 Kb • 1 Pages |
Abstract: ... 511-2N1711 2N1711 TO-39 75 0.5 1.5 0.15 ----/130/300 0.15 70/100 0.05 .50 .43 .38 .35. 511-2N1613 2N1613 TO-39 75 0.5 1.5 0.15 40/80/120 0.15 60/80 0.05 .50 .43 .38 .35. 511-2N1893 2N1893 TO-39 80 ... Labels: 2N1711 |
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