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2N1711 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
2N1711 LEAD FREE Central Semiconductor Corp TRANS NPN 50V 0.5A TO-39 visit Digikey Buy
JANTX2N1711S Microsemi Corporation Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN visit Digikey Buy

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2N1711 Datasheet

Part Manufacturer Description PDF Type
2N1711 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 500MA TO-39 Original
2N1711 Freescale Semiconductor General Purpose Transistor - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original
2N1711 Microsemi General Purpose Bipolar Transistor, NPN, TO-5, 3-Pin - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original
2N1711 Philips Semiconductors NPN medium power transistor - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original
2N1711 Philips Semiconductors Silicon Planar Transistor Original
2N1711 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Bipolar NPN Device - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original
2N1711 STMicroelectronics TRANS GP BJT NPN 50V 0.5A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original
2N1711 STMicroelectronics SWITCHES AND UNIVERSAL AMPLIFIERS - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original
2N1711 Various Russian Datasheets Transistor Original
2N1711 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N1711 Boca Semiconductor General Purpose Bipolar Transistor, NPN, 50V, TO-39, 3-Pin - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan
2N1711 Boca Semiconductor General purpose transistor - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan
2N1711 Boca Semiconductor GENERAL PURPOSE TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan
2N1711 Central Semiconductor NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE Scan
2N1711 Central Semiconductor NPN Metal Can Switching and General Purpose Transistors Scan
2N1711 Central Semiconductor General Purpose Bipolar Transistor, NPN, 50V, TO-39, 3-Pin - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan
2N1711 Continental Device India Semiconductor Device Data Book 1996 Scan
2N1711 Crimson Semiconductor Transistor Selection Guide Scan
2N1711 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N1711 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
Showing first 20 results.

2N1711

Catalog Datasheet MFG & Type PDF Document Tags

2N1711

Abstract: 2N1711 M - Tstg 500 2.86 1.8 10.3 2N718A 2N956 50 75 7.0 800 4.57 3.0 17.15 1 ; I 2N1711 Unit Vdc Vdc Vdc mW m W :C W atts m W :C C 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 (TO-206AA) - 6 5 to +200 2N1711 , bient Therm al Resistance, Junctio n to Case Symbol R«j a R0JC 2N718A 2N956 350 97 2N1711 58 219 Unit , 0.01 m Adc, V c e = 10 Vdc) (lc = 0.1 m Adc, V c e = 10 Vdc) h FE 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 VcE lsatl v BE
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OCR Scan
2N1711 M 2N3019

2N1711 MOTOROLA

Abstract: 2n1711 °C (d 2N718A 2N956 Symbol VCER VCBO v EBO PD 2N718A 2N956 2N1711 50 75 Unit Vdc CASE , Resistance, Junction to Case - 65 to + 200 2N1711 CASE 79-04, STYLE 1 TO-39 (T0-205AD) GENERAL PURPOSE TRANSISTORS NPN SIUCON Refer to 2N3019 fo r graphs. Symbol r 0JA 2N718A 2N956 350 97 2N1711 58 219 , , Vce = 10 Vdc} hFE 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 v CE(sat) v BE(satl 2.0%. 20 20 35 35 75 20 35 40 100 20 40
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OCR Scan
2N1711 MOTOROLA 2N956 MOTOROLA

2n1711

Abstract: Devices 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol 2N1711 2N1890 Unit VCBO VEBO IC , . Max. Unit 2N1711, S 2N1890, S V(BR)CBO 75 100 Vdc 2N1711, S 2N1890, S V(BR)CER 50 80 Vdc 2N1711, S 2N1890, S V(BR)CEO 30 60 Vdc V(BR)EBO 7.0 Vdc OFF , VEB = 5.0 Vdc 2N1711 2N1890 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666
Microsemi
Original
MIL-PRF-19500/ MIL-PRF-19500/225

2N1711

Abstract: 2N1890 Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol 2N1711 2N1890 Unit VCBO , Symbol Min. Max. Unit 2N1711, S 2N1890, S V(BR)CBO 75 100 Vdc 2N1711, S 2N1890, S V(BR)CER 50 80 Vdc 2N1711, S 2N1890, S V(BR)CEO 30 60 Vdc V(BR)EBO , Cutoff Current VEB = 5.0 Vdc 2N1711 2N1890 6 Lake Street, Lawrence, MA 01841 1-800-446-1158
Microsemi
Original
equivalent transistor 2N1711 transistor 2N1711 2N171-1

2n1711

Abstract: transistor 2n1711 TECHNICAL DATA 2N1711 JAN, JTX 2N1890 JAN, JTX MIL-PRF QML DEVICES Processed per MIL-PRF-19500/225 NPN LOW-POWER SILICON TRANSISTORS MAXIMUM RATINGS Ratings Symbol 2N1711 , unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N1711 2N1890 V(BR)CBO 75 100 Vdc 2N1711 2N1890 V(BR)CER 50 80 Vdc 2N1711 2N1890 V(BR)CEO 30 60 , 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711 2N1890 6 Lake Street
New England Semiconductor
Original
2N1711 Data Sheet

2n1711

Abstract: equivalent transistor 2N1711 Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Symbol 2N1711 2N1890 , noted) Characteristics Symbol Min. Max. Unit 2N1711, S 2N1890, S V(BR)CBO 75 100 Vdc 2N1711, S 2N1890, S V(BR)CER 50 80 Vdc 2N1711, S 2N1890, S V(BR)CEO 30 60 , Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711 2N1890 6 Lake Street, Lawrence, MA 01841 , of 2 2N1711, 2N1890 JAN SERIES Characteristics Symbol Min. Max. hFE 20 100 50
Microsemi
Original
equivalents transistor 2n1711 transistor 2n1890

2N1711

Abstract: 2N956 MAXIMUM RATINGS Rating Symbol 2N718A 2N956 2N1711 Unit Collector-Emitter Voltage VCER 50 Vdc , +200 THERMAL CHARACTERISTICS Characteristic Symbol 2N718A 2N956 2N1711 Unit Thermal Resistance , CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 Collector 3 , 2N1711 CASE 79-04, STYLE 1 TO-39 (TO , , 2N956, 2N1711 Iebo - - 0.010 0.005 uAdc ON CHARACTERISTICS DC Current Gain dC = 0.01 mAdc, VCE = 10 Vdc) 2N956, 2N1711 hFE 20 _ _ - (lc = 0.1 mAdc, Vce = 10 Vdc) 2N718A, 2N956, 2N1711 20 35 - -
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OCR Scan
X10-4 2N1711N 2IM3019

2N1711

Abstract: 2N1711 MOTOROLA MAXIMUM RATINGS Rating Symbol 2N718A 2N956 2N1711 Unit Collector-Emitter Voltage VCER 50 Vdc , -65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol 2N718A 2N956 2N1711 Unit , 219 "C/W 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 Collector 1 Emitter 2N1711 CASE 79-04 , Vdc, Iq - 0) 2N718A, 2N956, 2N1711 Iebo â'" â'" 0.010 0.005 /¡¡Ade ON CHARACTERISTICS DC Current Gain (IC = 0.01 mAdc, Vce = 10 Vdc) 2N956, 2N1711 h FE 20 â'" â'" â'" flC = 0.1 mAdc, Vce = 10 Vdc
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OCR Scan
2N718

2N1613

Abstract: 2N1711 NPN 2N1613 ­ 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN , use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to , 58 219 °C/ W °C/ W 1/3 NPN 2N1613 ­ 2N1711 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEB0 VCBO Ratings DC Current Gain 2N1711 2N1613 Small Signal Current Gain 2N1711 2N1613 hje Input Impedance 2N1711 2N1613 hre Reverse VoltageRatio
Comset Semiconductors
Original

2N697 equivalent

Abstract: 2N1711 equivalent 2N1711 NPN TO-39 BFX85 2N171-1 NPN TO-39 BFX86 2N1711 NPN TO-39 BFX87 2 N 2904A PNP TO-39 BFX88 , NPN TO-39 BFY51 2N697 NPN TO-39 BFY52 2N1711 NPN TO-39 BFY56 2N697 NPN TO-39 BFY72 2N2218 NPN TO , MD2904AF TI National Type Near Equivalent Polarity Pkg. BSX45-10 2N1711 NPN TO-39 BSX45-16 2N1711 NPN TO-39 BSX46-6 2N2102 NPN TO-39 BSX46-10 2N2102 NPN TO-39 BSX4616 2N1711 NPN TO-39 BSX48 2N2221
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OCR Scan
N2904A BFX37 BSX88 BSY38 2N3914 TCH99 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 DH3467CD BFY39 BFX30 2N2605 BFX65 BFX84

2N1711

Abstract: 80Vdc Emitter-Base Cutoff Current V EB = 5.0 Vdc 2N1711.S 2N1890, S 2N1711. S 2N1890, S 2N1711, S 2N1890. S V (BR)HBO 2N1711 2N1890 IOBO 10 10 IEBO 5.0 VI .Seini-C , Vdc Collector-Emitter Saturation Voltage I c = 150 mAdc, IB = 15 mAdc Symbol HFE 2N1711.S , . SPRINGFIELD, NEW JERSEY 07081 U.S.A. Devices 2N1711 2N1890 MAXIMUM RATINGS Ratings Collector-Base , +25°C (2 > Operating & Storage Junction Temperature Range Symbol VCBO VEBO Ic 2N1711 2N1890
New Jersey Semiconductor
Original
2N171LS 2N17U

2N1711

Abstract: 2N1613 3QE D â  7^237 DD311D3 7 â  Â£ZT SGS-THOMSON 2N1613 _2N1711 "TT^-thomson^ SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO , . The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Products , Tamb = 150 °C 10 10 nA HA Iebo Emitter Cutoff Current (lc=0) Veb = 5 V for 2N1613 for 2N1711 10 5 , for 2N1711 lc = 0.01 mA lc = 0.1 mA lc = 10 mA lc =150 mA lo =500 mA lo =10 mA Tamb = 55 °C
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OCR Scan
2N1613-2N1711 DD311QS T-35-19

equivalent transistor 2N1711

Abstract: 2N1711 , TYPES 2N1711, 2N1711S, 2N1890, AND 2N1890S, JAN AND JANTX This specification is approved for use by , 3131 See 4.3.2 ZJX Breakdown voltage, collector to emitter 2N1711, 2N1711S 2N1890, 2N1890S , 2N1711, 2N1711S 2N1890, 2N1890S 3036 Bias condition D V dc V dc 50 80 Bias condition D; IC = 100 mA dc; pulsed (see 4.5.1). RBE = 10. V dc V dc V(BR)CER 2N1711, 2N1711S 2N1890 , 2N1711, 2N1711S 2N1890, 2N1890S 3071 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) 3071
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Original
2N1711S JAN MIL-PRF-19500/225J MIL-PRF-19500/225H MIL-PRF-19500

equivalent transistor 2N1711

Abstract: 2N1711 , TYPES 2N1711, 2N1711S, 2N1890, 2N1890S, JAN AND JANTX This specification is approved for use by all , in the general requirements of MIL-STD-750 (see 4.5). PT = 800 mW; 2N1711, 2N1711S: VCB = 24 V dc , °C min; VCB = 24 V dc for 2N1711 and 2N1711S; VCB = 48 V dc for 2N1890 and 2N1890S. 4.4.4 Group E , impedance 2/ | |Breakdown voltage | collector to base | | 2N1711, 2N1711S | 2N1890, 2N1890S | |Breakdown voltage | emitter to base | |Breakdown voltage | collector to emitter | | 2N1711, 2N1711S
New England Semiconductor
Original
2N1890 equivalent E11051 transistor TL 431 g MIL-PRF-19500/225F MIL-S-19500/225E

Motorola* 2n708

Abstract: BSy38 * PNP TO-18 BFX84 2N1711 NPN TO-39 BFX85 2N171-1 NPN TO-39 BFX86 2N1711 NPN TO-39 BFX87 2 N 2904A , TO-18 BFY50 2N697 NPN TO-39 BFY51 2N697 NPN TO-39 BFY52 2N1711 NPN TO-39 BFY56 2N697 NPN TO , MQ2369A MD2484F MQ2484 MD2904AF TI National Type Near Equivalent Polarity Pkg. BSX45-10 2N1711 NPN TO-39 BSX45-16 2N1711 NPN TO-39 BSX46-6 2N2102 NPN TO-39 BSX46-10 2N2102 NPN TO-39 BSX4616 2N1711 NPN TO
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OCR Scan
2N706 2N706A 2N706B 2N706C 2N708 2N743 Motorola* 2n708 SP3725QDB tch98

2n1711

Abstract: 2N1711 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N1711 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N1711 at our online store! 2N1711 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N1711 Information Did you Know , a Quote Test Houses 2N1711 Specifications Military/High-Rel : N V(BR)CEO (V) : 50 V(BR)CBO (V
American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510

SP3725QDB

Abstract: 2N5146 -18 BFX65 2N2605* PNP TO-18 BFX84 2N1711 NPN TO-39 BFX85 2N171-1 NPN TO-39 BFX86 2N1711 NPN TO-39 BFX87 , -2 2N916 NPN TO-18 BFY50 2N697 NPN TO-39 BFY51 2N697 NPN TO-39 BFY52 2N1711 NPN TO-39 BFY56 2N697 NPN , -10 2N1711 NPN TO-39 BSX45-16 2N1711 NPN TO-39 BSX46-6 2N2102 NPN TO-39 BSX46-10 2N2102 NPN TO-39 BSX4616 2N1711 NPN TO-39 BSX48 2N2221 NPN TO-18 BSX88 2N2369A NPN TO-18 BSY38 2N706 NPN TO-18 BSY39 2N2369A
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OCR Scan
SP3763QF 2N3244 2N3245 2N3252 2N3253 2N3444 2N5146 2N2904A MOTOROLA 2N3763 MOTOROLA SP3763Q0 SP34G7ADB

2n2219 equivalent

Abstract: 2N2219A BSX45 -39 BFX37 2N2605* PNP TO-18 BFX65 2N2605* PNP TO-18 BFX84 2N1711 NPN TO-39 BFX85 2N171-1 NPN TO-39 BFX86 2N1711 NPN TO-39 BFX87 2 N 2904A PNP TO-39 BFX88 2N2904A PNP TO-39 8FY39 2N916 NPN TO-18 BFY39-1 2N916 NPN TO-18 BFY39-2 2N916 NPN TO-18 BFY50 2N697 NPN TO-39 BFY51 2N697 NPN TO-39 BFY52 2N1711 NPN , Pkg. BSX45-10 2N1711 NPN TO-39 BSX45-16 2N1711 NPN TO-39 BSX46-6 2N2102 NPN TO-39 BSX46-10 2N2102 NPN TO-39 BSX4616 2N1711 NPN TO-39 BSX48 2N2221 NPN TO-18 BSX88 2N2369A NPN TO-18 BSY38 2N706 NPN
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OCR Scan
2N1132A 2N1132B 2N2217 2N2218A N3343 2n2219 equivalent equivalent 2N2219 2N2905a equivalent 2N2219A NPN 2N721A 2N722A
Abstract: 2N1711 ® EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN , switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important , September 2002 -65 to 175 o C 175 o C 1/4 2N1711 THERMAL DATA R thj-case R , V CE = 10 V f = 1 KHz 300 MHz Kâ"¦ µS 2N1711 TO-39 MECHANICAL DATA mm inch , Pr e let o bs I O D G A E F H B L P008B 3/4 2N1711 (s) ct STMicroelectronics
Original

2N1711

Abstract: st 2n1711 2N1711 ® EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN , switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important , -65 to 175 o C 175 o C 1/4 2N1711 THERMAL DATA R thj-case R thj-amb , µS 2N1711 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 , I E F H B L P008B 3/4 2N1711 Information furnished is believed to be
STMicroelectronics
Original
st 2n1711

2N1711

Abstract: 2N1613 2N1711 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max. Unit hpE DC , il 240 2N1613 2N1711 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ
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OCR Scan
2M1711 transistor 2N 238 2n 1711

2n1711

Abstract: 2N1613 - Tstg 500 2.86 1.8 10.3 2N718A 2N956 50 75 7.0 800 4.57 3.0 17.15 1 ; I 2N1711 Unit Vdc Vdc Vdc mW m W :C W atts m W :C C 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 (TO-206AA) - 6 5 to +200 2N1711 , bient Therm al Resistance, Junctio n to Case Symbol R«j a R0JC 2N718A 2N956 350 97 2N1711 58 219 Unit , 0.01 m Adc, V c e = 10 Vdc) (lc = 0.1 m Adc, V c e = 10 Vdc) h FE 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 VcE lsatl v BE
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OCR Scan
2n 1613 H12B LE 138 h21e 1711

2N1613

Abstract: 2M1711 2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Products approved to CECC 50002-104 available on request. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-base
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OCR Scan
high gain low noise 2n

equivalent transistor 2N1711

Abstract: J 2N1711 Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Symbol 2N1711 2N1890 , noted) Characteristics Symbol Min. Max. Unit 2N1711, S 2N1890, S V(BR)CBO 75 100 Vdc 2N1711, S 2N1890, S V(BR)CER 50 80 Vdc 2N1711, S 2N1890, S V(BR)CEO 30 60 , Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711 2N1890 6 Lake Street, Lawrence, MA 01841 , of 2 2N1711, 2N1890 JAN SERIES Characteristics Symbol Min. Max. hFE 20 100 50
STMicroelectronics
Original
J 2N1711 N1711 2n1613 equivalent 2N1613 Data Sheet
Showing first 20 results.