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  1 - 10 of about 66 for 2N1711   
  Part Number Manufacturer   Description      
 1.   2N1711  2N1711 Semelab   Low Frequency Silicon Power NPN Transistor 49.88 Kb  1 Pg.  
 2.   2N1711  2N1711 ST Microelectronics   SWITCHES AND UNIVERSAL AMPLIFIERS - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 60.28 Kb  5 Pg.  
 3.   2N1711  2N1711 Semelab   Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Bipolar NPN Device - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 10.56 Kb  1 Pg.  
 4.   2N1711  2N1711 Raytheon Company   Selection Guide 1977 95.01 Kb  2 Pg.  
 5.   2N1711  2N1711 ST Microelectronics   Shortform Data Book 1988 38.25 Kb  1 Pg.  
 6.   2N1711  2N1711 Ferranti Semiconductors   Quick Reference Guide 1985 40.25 Kb  1 Pg.  
 7.   2N1711  2N1711 Thomson-CSF   Shortform Semiconductor Catalogue 1982 126.58 Kb  1 Pg.  
 8.   2N1711  2N1711 Motorola, Inc.   European Master Selection Guide 1986 64.88 Kb  2 Pg.  
 9.   2N1711  2N1711 ZaeriX   Short Form Data Catalogue 1972-73 46.71 Kb  1 Pg.  
 10.   2N1711  2N1711 Crimson Semiconductor   Transistor Selection Guide 1453.37 Kb  36 Pg.  

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Contextual Results
  1 - 10 of about 44+ for 2N1711   
1. Datasheet Text Contains 2N1711
27.84 Kb  •  2 Pages

Abstract: ... MAXIMUM RATINGS Ratings Symbol 2N1711 2N1890 Units. Collector-Emitter Voltage VCEB 50 80 Vdc. Collector-Base Voltage VCBO 75 100 Vdc. Emitter-Base Voltage VEBO 7.0 Vdc. Collector Current IC 500 ...

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2. Datasheet Text Contains 2N1711
54.3 Kb  •  3 Pages

Abstract: ... Ratings Symbol 2N1711 2N1890 Unit. Collector-Base Voltage VCBO 75 100 Vdc. Emitter-Base Voltage VEBO 7.0 Vdc. Collector Current IC 500 mAdc. Total Power Dissipation @ TA = +250C (1) @ TC = +25. 0C (2) PT ...

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3. Datasheet Text Contains 2N1711
49.8 Kb  •  2 Pages

Abstract: ... Ratings Symbol 2N1711 2N1890 Unit. Collector-Base Voltage VCBO 75 100 Vdc. Emitter-Base Voltage VEBO 7.0 Vdc. Collector Current IC 500 mAdc. Total Power Dissipation @ TA = +250C (1) @ TC = +25. 0C (2) PT ...

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4. Datasheet Text Contains 2N1711
60.29 Kb  •  5 Pages

Abstract: ... The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The ...

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5. Datasheet Text Contains 2N1711
45.58 Kb  •  4 Pages

Abstract: ... The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used ...

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6. Datasheet Text Contains 2N1711
10.57 Kb  •  1 Pages

Abstract: ... 2N1711. Bipolar NPN Device. VCEO = 50V IC = 0.5A. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications ...

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7. Datasheet Text Contains 2N1711
48.45 Kb  •  8 Pages

Abstract: ... 2N1711 NPN medium power transistor. book, halfpage. M3D111. 1997 May 28 2. Philips Semiconductors Product specification. NPN medium power transistor 2N1711. FEATURES. • High current (max. 500 mA) ...

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8. Datasheet Text Contains 2N1711
4.5 Kb  •  1 Pages

Abstract: ... 2N1711 TO-39 50 500 800 100 300 70 ‐ ‐ 113. 2N1893 TO-39 80 500 800 40 120 ‐ ‐ ‐ 115. 2N3019 TO-39 80 1000 800 100 300 100 ‐ ‐ 146. BC140 TO-39 40 1000 3700 63 250 50 ‐ BC160 225. BC140-10 TO-39 40 1000 3700 63 160 50 ...

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9. Datasheet Text Contains 2N1711
134.37 Kb  •  4 Pages

Abstract: ... Order this document by 2N1711/D. SEMICONDUCTOR TECHNICAL DATA. CASE 79‐04, STYLE 1 TO‐39 (TO‐205AD) 1. 2. 3. Ω Motorola, Inc. 1996. COLLECTOR 3. 2. BASE. 1. EMITTER. (Replaces 2N718A/D) ARCHIVE INFORMATION ...

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10. Datasheet Text Contains 2N1711
106.09 Kb  •  1 Pages

Abstract: ... 511-2N1711 2N1711 TO-39 75 0.5 1.5 0.15 ----/130/300 0.15 70/100 0.05 .50 .43 .38 .35. 511-2N1613 2N1613 TO-39 75 0.5 1.5 0.15 40/80/120 0.15 60/80 0.05 .50 .43 .38 .35. 511-2N1893 2N1893 TO-39 80 ...

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