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1 - 50 of about 218 for 2N1613 |
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First line: 2N1613 POWER SILICON TRANSISTOR Qualified MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JANTX JANTXV Abstract: .. 1 Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A 2N718A for TA > +250C 250C 2 Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A 2N718A for TC > +250C 250C . TO-18 TO-18 TO-206AA TO-206AA * 2N718A 2N718A . TO-39 TO-39 .. Tags: TO-205AD 2N1613 Data Sheet 2N718A 2N1613 2N1613L |
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First line: 2n1613 POWER SILICON TRANSISTOR Qualified MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JANTX JANTXV Abstract: .. 1 Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A 2N718A for TA > +250C 250C 2 Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A 2N718A for TC > +250C 250C . TO-18 TO-18 TO-206AA TO-206AA * 2N718A 2N718A . TO-39 TO-39 .. Tags: TO-205AD fm variable capacitor 2N1613 Data Sheet 2N1613* 2N718A 2N1613 2N1613L |
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First line: 2N1613 2N718A JAN, JTX, JTXV 2N1613 JAN, JTX, JTXV 2N1613L JAN, JTX, JTXV Processed MIL-PRF-19500/181 MIL-PRF DEVICES Abstract: .. 1 Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A 2N718A for TA > +250C 250C 2 Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A 2N718A for TC > +250C 250C ELECTRICAL CHARACTERISTICS .. Tags: TO-205AD 2N1613 Data Sheet 2N718A 2N1613 2N1613L |
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First line: 2N1711 Data Sheet equivalent transistor 2N1711 2N1613 2N1711 SWITCHES UNIVERSAL AMPLIFIERS DESCRIPTION 2N1613 2N1711 silicon planar epitaxial transistors Jedec TO-39 metal case. They designed high-performance amplifier, oscillator switching circuits. 2N1711 also used advantage amplifiers where noise Abstract: .. The 2N1613 and 2N1711 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The .. Tags: equivalent transistor 2N1711 J 2N1711 J 2N1613 2N1711 Data Sheet 2N1711 2N1613(1) 2N1613 sgs 2N1613 Data Sheet 2n1613 2N1613 2N1711 |
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First line: 2N1613 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 2N1711 transistors mounted TO-39 metal package with collector connected case They designed high-performance amplifier, oscillator switching circuits. 2N1711 also used advantage amplifiers where noise important factor. Compliance RoHS. ABSOLUT Abstract: .. NPN 2N1613 – 2N1711 2N1711 . COMSET SEMICONDUCTORS 1/3. The 2N1613 and 2N1711 2N1711 are NPN transistors mounted in TO-39 TO-39 metal package with the collector connected to the case . They are designed for use in high-performance .. Tags: 2N1711 Data Sheet 2N1711* 2N1613 2N1711 |
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First line: 2n1613 replacement 2N2102 SOLID STATE High Speed Power Transistors 2N1613, 2N2102 File Number Medium-Power Silicon N-P-N Planar Transistors Small-Signal Applications Industrial Commercial Equipment 2N2102 Feature*: Gain bandwidth product {typ.); useful applications from High breakdown voltage: Vibwc Abstract: .. G E SOLID STATE [- High Speed Power Transistors 2N1613, 2N2102 2N2102 File Number 106 Medium-Power Silicon N-P-N Planar Transistors For Small-Signal Applications In Industrial and Commercial Equipment .. Tags: 2N2102 2n1613 replacement datasheet abstract.. |
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First line: 2N1613 2N1711 Central 2N18C Semiconductor Corp. Silicon Transistor Adams Avenue, Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 JEDEC T0-39 CASE Manufacturers World Class Discrete Semiconductors Abstract: .. Datasheet 2N1613 2N1711 2N1711 Central 2N18C 2N18C Semiconductor Corp. NPN Silicon Transistor 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 †Fax: 631 435-1824 JEDEC T0-39 T0-39 CASE Manufacturers .. Tags: datasheet abstract.. |
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First line: c240* Transistor BC107 Unencapsulated Chip Transistors PIMP 'Chip' Transistors Microcircuit Assemblies Characteristics Abstract: .. 1 2N929 2N929 2500 C2300L C2300L 45 80 6 >35 5/10 2N1613 1500 C2300H C2300H 45 80 6 >75 5/10 2N1613 1500 C2350L C2350L 35 65 5 >40 5/10 2N2218 2N2218 1500 C2350H C2350H 35 65 5 >80 5/10 2N2218 2N2218 1500 C2400L C2400L 15 40 5 >20 2/1 2N2368 2N2368 2000 .. Tags: Transistor BC107 c240* datasheet abstract.. |
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First line: 1613 1711 SLCON PANAR EPTAXAL TRANSSTORS 2N1613 2N1711 PLANAR EPTAXAL TRANSSTORS DESGNED SWTCHNG D.C. AMPLFERS. ABSOLUTE MAXMUM RATNGS Collector-Base Voltage Collector-Hitter Voltage($3E<10rt Fitter-Base Voltage Total Power Bissipatio Operatig Juctio Temperature Storage Temperature Rage VCBO VCER Abstract: .. 2N 1613 2N 1711 NBJ SILICON PIANAR EPITAXIAL TRANSISTORS I THE 2N1613 AND 2N1711 2N1711 ABE NPN SILIC Si PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS. ABSOLUTE MAXIMUM .. Tags: 2N1111 2N1111* datasheet abstract.. |
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First line: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2222 motorola 2N2222A motorola 2N3440 MOTOROLA METAL SMALL-SIGNAL TRANSISTORS (continued) Choppers Devices listed decreasing V(qr)ebo- Package Device V(BR)EBO V(BR)ECO hFE(inv) Offset Voltage vEC(ofs) (mV) On-State Resistance rec(on) (il) TO-46 2N2946 2N Abstract: .. products to CECC 50000 All CECC types are available to assessment levels E, F, L 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC .. Tags: 2N3440 MOTOROLA 2N2222A motorola 2N2222 motorola 2N2905 MOTOROLA motorola transistor 2N2907A datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbS3T31 OOEflDbS HAPX SILICON PLANAR TRANSISTOR N-P-N double diffused transistor inaTO-39 metal envelope designed wide variety applications including d.c. amplifiers, high-speed switching high-speed amplifiers. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max Abstract: .. T7T ■ APX 2N1613 CHARACTERISTICS Tamb = 25 C unless otherwise specified Collector cut-off current lE = 0; VCB = 60V lE = 0; VCB = 60 V; Tamb = 150 C Emitter cut-off current IC = 0;VEB = 5 V Collector .. Tags: datasheet abstract.. |
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First line: SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Package Abstract: .. NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613. TO-39 TO-39 . Metal Can Package. ABSOLUTE MAXIMUM RATINGS Ta=25oC 25oC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS. Collector Emitter Voltage .. Tags: 2N1613 |
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First line: 2N1613 Dimensions (inches). Abstract: .. 2N1613. Bipolar NPN Device. VCEO = 50V IC = 0.5A. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2N1613 |
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First line: SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Package Abstract: .. NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613. TO-39 TO-39 . Metal Can Package. ABSOLUTE MAXIMUM RATINGS Ta=25oC 25oC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS. Collector Emitter Voltage .. Tags: J 2N1613 2N1613 Data Sheet 2N1613 |
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First line: book, halfpage M3D111 Abstract: .. 2N1613 NPN medium power transistor book, halfpage M3D111 M3D111 1997 Apr 11 2 Philips Semiconductors Product specification NPN medium power transistor 2N1613 FEATURES • Low current max .. Tags: 2N1613 Data Sheet M3D111 |
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First line: motorola transistor 2N2907A transistor 2N4033 2N3440 MOTOROLA 2N5231 2N2222A motorola METAL SMALL-SIGNAL TRANSISTORS (continued) General-Purpose Amplifiers These transistors designed amplifier applications, general-purpose switching applications, complementary circuitry. Devices listed decreasing or Abstract: .. 6, -10, -16 HFE groups BC141 BC141 60 50 50 1000 40 400 100 Exists in -6, -10, -16 HFE groups 2N1613# 50 60 50 500 40 120 150 Exists under CECC BSX45 BSX45 40 50 50 1000 40 250 100 Exists in -6, -10, -16 HFE groups BC140 BC140 .. Tags: 2N2222A motorola 2N5231 2N3440 MOTOROLA transistor 2N4033 motorola transistor 2N2907A datasheet abstract.. |
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First line: BC140 equivalent 2n3019 equivalent BC638(-6...-10) equivalent transistor 2N1711 Package TO 39 Small-signal Transistors LEADED DEVICES (continued) GENERAL PURPOSE MEDIUM-POWER TRANSISTORS TYPE NUMBER 2N1613 2N1711 2N1893 2N3019 BC140 BC140-10 BC140-16 BC141 BC141-10 BC141-16 BC368 BC368-16 BC368-25 B Abstract: .. 2N1613 TO-39 TO-39 50 500 800 40 120 60 ‐ ‐ 110. 2N1711 2N1711 TO-39 TO-39 50 500 800 100 300 70 ‐ ‐ 113. 2N1893 2N1893 TO-39 TO-39 80 500 800 40 120 ‐ ‐ ‐ 115. 2N3019 2N3019 TO-39 TO-39 80 1000 800 100 300 100 ‐ ‐ 146. BC140 BC140 TO-39 TO-39 40 1000 3700 63 250 50 ‐ BC160 BC160 225 .. Tags: Package TO 39 equivalent transistor 2N1711 BC638(-6...-10) 2n3019 equivalent BC140 equivalent to-39 transistors to-39 TO 39 pnp for 2n3019 BSX46-16 BSX45-16 BC640-16 BC639-16 BC638-10 BC636-10 bc368 equivalent 2N1613 2N1711 2N1893 2N3019 |
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First line: 2N1613 1711 SILICON PLANAR SWITCHES UNIVERSAL AMPLIFIERS 1613 1711 silicon planar epitaxial transistors Jedec TO-39 metal case. They designed high performance amplifier, oscillator switching circuits. 1711 also used advantage amplifiers where noise important factor. Collector-base voltage VcER Colle Abstract: .. 2N1613 2M 1711 SILICON PLANAR NPN SWITCHES AND UNIVERSAL AMPLIFIERS The 2N 1613 and 2N 1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 TO-39 metal case. They are designed for use in high .. Tags: datasheet abstract.. |
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First line: BFR97 BSY90 BFR97* Transistors Silicon General Purpose Amplifiers Switches Metal (TO-39) VCBOUPtOl20V. 750mA. 25'C. Outline Drawing applies. REFERENCE TABLE Max. Characteristics 25*C Abstract: .. rating Characteristics @ 25*C BSY51 BSY51 BSYS2 BSYS3 BSY54 BSY54 BSY55 BSY55 BSY56 BSY56 BSY87 BSY87 BSY88 BSY88 BSY90 BSY90 2N1613 2N1711 2N1711 2N1893 2N1893 VcBO VCEO V V Ic A min. hpE @ Ic max. mA 60 25 0.5 40 120 150 60 25 0.5 100 300 150 75 .. Tags: BFR97* BSY90 BFR97 datasheet abstract.. |
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First line: 1N5004 TXD10K60 mp8706 BT806 BT1690 AMER PHILIPS/DISCRETE bbS3131 aOlbSbH T-Ol-oX INDUSTRY PART NUMBER NEAREST EQUIV. EQUIV. PKG. INDUSTRY PART NUMBER NEAREST EQUIV. EQUIV. PKG. 0105-50 BLU52 1N321 BYW56 0204-50 BLU52 1N321A BYW56 0510-25 BLV97 1N322 BYW56 12F5 BYX99-300 1N322A BYW56 Abstract: .. SOT-89 SOT-89 59 2N692 2N692 BTW45-800RU BTW45-800RU 30 2N927 2N927 2N2907 2N2907 15 PZT2907A PZT2907A SOT-223 SOT-223 59 2N696 2N696 2N1613 14 2N928 2N928 2N2907 2N2907 15 PXT2907A PXT2907A SOT-89 SOT-89 59 2N697 2N697 2N1613 14 BSR40 BSR40 SOT-89 SOT-89 60 2N928 2N928 2N2907 2N2907 15 PZT2907A PZT2907A SOT-223 SOT-223 59 2N697 2N697 2N1613 .. Tags: BT1690 BT806 mp8706 TXD10K60 1N5004 datasheet abstract.. |
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First line: 2N3058 2N2222 transistor n328a 2N3059 N2907 DIODE TRANSISTOR 5flMfl35g DODOmO l^t^^rjs^sj (201) 666-0400 Telex: 139-385 Outside area call TOLL FREE 800-526-4581 201-575-6863 SILICON POWER TRANSISTORS DEVICES DEVICES DEVICES Abstract: .. 800 30 40/- 150 0.35 150/15 50 160 TYP BFY52 BFY52 800 20 60/- 150 0.35 150/15 50 220 TYP 2N1613 800 50* 40/120 150 1.5 150/15 60 2N1711 2N1711 800 50* 100/300 150 1.5 150/15 70 2N1893 2N1893 800 80 40/120 150 5 150/15 50 2N2102 2N2102 .. Tags: N2907 2N3059 n328a 2N2222 transistor 2N3058 datasheet abstract.. |
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First line: SWITCHING TABLE SILICON PLANAR MEDIUM HIGH SPEED SWITCHING TRANSISTORS devices shown this table characterised medium high speed switching applications Commercial, Industrial Military equipments. devices listed order decreasing Breakdown Voltage (VCE0), decreasing Collector Current 0c), Power Dissipa Abstract: .. 55* 360* 150 TO-39 TO-39 - BCY65E BCY65E 60 100 0.35 10 0.25 120 460 2 125 10 150 800 10 TO-18 TO-18 BCY77 BCY77 2N1613 50 1000 1.5 1150 15 40 120 150 60 50 note 1 TO-39 TO-39 - 2N2270 2N2270 45 1000 0.9 150 15 50 200 150 60 50 note 1 TO-39 TO-39 - ZT83 ZT83 .. Tags: datasheet abstract.. |
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First line: 2n1837 O-38 CONFIGURAION EMIER BASE COLLECOR 8,50 9,39 Abstract: .. ns Max NF @ Freq dB MHz Max 2N1507 2N1507 60 30 5 0.6 1 1 30 100 300 150 10 1.5 150 35 50 2N1613 75 50 7 0.8 0.5 0.01 60 20 40 35 20 120 500 150 10 0.1 10 10 10 10 1.5 1.3 150 25 60 50 12 0.001 2N1644 2N1644 60 5 2 1 30 40 150 10 .. Tags: 2n1837 datasheet abstract.. |
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First line: LEVEL TABLE SILICON PLANAR LEVEL TRANSISTORS devices shown this table level transistors designed small medium signal, medium power amplification from radio frequencies Commercial, Industrial Military equipments. These transistors particularly suitable Audio Frequency Amplifiers, Driver Output Stages Abstract: .. 250 100 50 50 3700* TO-39 TO-39 BC160 BC160 BFY50 BFY50 80 35 1000 0.2 150 15 30 - 150 60 50 800 TO-39 TO-39 - 2N1613 75 50 1000 1.5 150 15 40 120 150 60 50 800 TO-39 TO-39 - 2N1711 2N1711 75 50 1000 1.5 150 15 100 300 150 70 50 800 TO-39 TO-39 - ZT89 ZT89 70 70 500 .. Tags: datasheet abstract.. |
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First line: 2n2484 complementary BC109 MOTOROLA 2N2219 MOTOROLA 2N3019 motorola METAL SMALL-SIGNAL TRANSISTORS (continued) General-Purpose Amplifiers These transistors designed amplifier applications, general-purpose switching applications, complementary circuitry. Devices listed decreasing order V(br)CEO withi Abstract: .. 6, -10, -16 HFE groups BC141 BC141 60 50 50 1000 40 400 100 Exists in -6, -10, -16 HFE groups 2N1613# 50 60 50 500 40 120 150 Exists under CECC BSX45 BSX45 40 50 50 1000 40 250 100 Exists in -6, -10, -16 HFE groups BC140 BC140 .. Tags: 2N3019 motorola 2N2219 MOTOROLA BC109 MOTOROLA 2n2484 complementary datasheet abstract.. |
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First line: GENERAL PURPOSE TABLE SILICON PLANAR GENERAL PURPOSE TRANSISTORS devices shown this table general purpose transistors designed small medium signal, medium power amplification from D.C. radio frequencies Commercial, Industrial Military equipments. These transistors particularly suitable Audio Frequen Abstract: .. 40 250 100 50 50 3700t 3700t TO-39 TO-39 BC160 BC160 BFY50 BFY50 80 35 1000 0-2 150 15 30 — 150 60 50 800 TO-39 TO-39 - 2N1613 75 50 1000 1 -5 150 15 40 120 150 60 50 800 TO-39 TO-39 — 2N1711 2N1711 75 50 1000 1 -5 150 15 100 300 150 70 50 800 TO-39 TO-39 — ZT89 ZT89 70 70 .. Tags: datasheet abstract.. |
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First line: SWITCHING TABLE SILICON PLANAR MEDIUM HIGH SPEED SWITCHING TRANSISTORS devices shown this table characterised medium high speed switching applications Commercial, Industrial Military equipments. devices listed order decreasing Breakdown Voltage (VCE0), decreasing Collector Current (lc), Power Dissip Abstract: .. 55* 360* 150 TO-39 TO-39 - BCY65E BCY65E 60 100 0.35 10 0.25 120 460 2 125 10 150 800 10 TO-18 TO-18 BCY77 BCY77 2N1613 50 1000 1.5 150 40 120 150 60 50 note 1 TO-39 TO-39 - 2N2270 2N2270 45 1000 0.9 150 15 50 200 150 60 50 note 1 TO-39 TO-39 - ZT83 ZT83 45 .. Tags: datasheet abstract.. |
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First line: BFR36(A) SGS c426* cp409 Transistor 2N3866 cp409* SGS-ATES Transistors Medium Power Transistors REFERENCE TABLE PT0T Outline T*MB=25'C LVCEO Stock Drawing Code (mA) (MHz) BC119 40-120 34546C Abstract: .. >35 100 40 34314B 34314B 66 C744 C744 0.8 30 0.5 30 100 40 19103H 19103H 66 CP409 CP409 5* 60 5 30 500 — 19107X 19107X 66 2N1613 0.8 50 0.5 40-120 150 60 19145X 19145X 67 2N1711 2N1711 0.8 50 0.5 100-300 150 70 34312F 34312F 67 2N1893 2N1893 0.8 80 — 40-120 150 50 .. Tags: cp409* Transistor 2N3866 cp409 SGS c426* BFR36(A) datasheet abstract.. |
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First line: 1045b BSY87* BSY87 Transistors Silicon General Purpose Amplifiers Switches Metal (TO-39) VCBOUPtOl20V. 750mA. 25'C. Outline Drawing applies. REFERENCE TABLE Max. Characteristics 25*C Abstract: .. rating Characteristics @ 25*C BSY51 BSY51 BSYS2 BSYS3 BSY54 BSY54 BSY55 BSY55 BSY56 BSY56 BSY87 BSY87 BSY88 BSY88 BSY90 BSY90 2N1613 2N1711 2N1711 2N1893 2N1893 VcBO VCEO V V Ic A min. hpE @ Ic max. mA 60 25 0.5 40 120 150 60 25 0.5 100 300 150 75 .. Tags: BSY87 BSY87* 1045b datasheet abstract.. |
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First line: 40409 2N2102 FAMILY [n-p-n] (silicon) min; DESCRIPTION VBE(sat)-V VCER(sus) VCEV(sus) TYPES TO-39 0.01 1000 'SP 2N697 Purpose 40-120 2N699 Purpose 40-120 2N1613 V-Linear Beta min. min. 40-120 min. 0.01 Abstract: .. 15 1.3 150 2N699 2N699 80 V—General Purpose - 80 - - - - - 40-120 - - 2 - 60 5 150 15 1.3 150 2N1613 50 V-Linear Beta - 50 - - 20 min. 35 min. - 40-120 20 min. - 0.01 10 60 1.5 150 15 1.3 150 2N1711 2N1711 50 V-High Linear Beta .. Tags: 40409 40814 40361 40315 40314 datasheet abstract.. |
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First line: bf459 transistor 2N915 Fairchild Silicon Small Signal Transistors Silicon High Speed Saturated Switching Transistors Metal REFERENCE TABUE medium speed General Purpose Section. RATINGS CHARACTERISTICS @25"C Vceo ce(sat) Outline Volts Ta=25X V0lts@l Stock Drawing Abstract: .. 50 200 10 1.0 10 3.5 250 35260D 35260D 65 2N916 2N916 25 360 50 200 10 0.5 10 6.0 300 35261B 35261B 65 2N1613 50 800 40 120 150 1.5 150 25 80 35262X 35262X 66 2N1711 2N1711 50 800 100 300 150 1.5 150 25 70 35263R 35263R 66 2N2218 2N2218 30 800 40 120 150 0.4 150 .. Tags: 2N915 bf459 transistor datasheet abstract.. |
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First line: 2N2148* 2N1906 transistor 2N1905 2N2147 2n2222 DIGITRON ELECTRONIC CORP 2045^07 -0\ Page DIQITRON ELECTRONIC CORF Hillside Avenue Springfield, Jersey 07081 201-379-9016 201-379-9019 201-467-8065 JOHN SCHWARTZ ENGINEERING DIGITRON ELECTRONICS, CORP, Hillside Avenue Springfield, 07081 Abstract: .. 2N1820 2N1820 2N2108 2N2108 2N2220 2N2220 2N1547 2N1547 2N1612 2N1612 2N1701 2N1701 2N1890 2N1890 2N2137 2N2137 2N2220A 2N2220A 2N1547A 2N1547A 2N1613 2N1702 2N1702 2N1891 2N1891 2N2137A 2N2137A 2N2221 2N2221 2N1548 2N1548 2N1613A 2N1703 2N1703 2N1892 2N1892 2N2138 2N2138 2N2221A 2N2221A 2N1549 2N1549 2N1613B 2N1704 2N1704 2N1905 2N1905 2N2138A 2N2138A .. Tags: 2n2222 2N2147 2N1905 2N1906 transistor 2N2148* datasheet abstract.. |
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First line: LEVEL TABLE SILICON PLANAR LEVEL TRANSISTORS devices shown this table level transistors designed small medium signal, medium power amplification from radio frequencies Commercial, Industrial Military equipments. These transistors particularly suitable Audio Frequency Amplifiers, Driver Output Stages Abstract: .. 250 100 50 50 3700* TO-39 TO-39 BC160 BC160 BFY50 BFY50 80 35 1000 0.2 150 15 30 - 150 60 50 800 TO-39 TO-39 - 2N1613 75 50 1000 1.5 150 15 40 120 150 60 50 800 TO-39 TO-39 - 2N1711 2N1711 75 50 1000 1.5 150 15 100 300 150 70 50 800 TO-39 TO-39 - BSY53 BSY53 75 30 .. Tags: datasheet abstract.. |
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First line: SWITCHING TABLE SILICON PLANAR MEDIUM HIGH SPEED SWITCHING TRANSISTORS devices shown this table characterised medium high speed switching applications Commercial, Industrial Military equipments. devices listed order decreasing Breakdown Voltage (VCE0), decreasing Collector Current (lc), Power Dissip Abstract: .. 55* 360* 150 TO-39 TO-39 - BCY65E BCY65E 60 100 0.35 10 0.25 120 460 2 125 10 150 800 10 TO-18 TO-18 BCY77 BCY77 2N1613 50 1000 1.5 150 40 120 150 60 50 note 1 TO-39 TO-39 - 2N2270 2N2270 45 1000 0.9 150 15 50 200 150 60 50 note 1 TO-39 TO-39 - ZT83 ZT83 45 .. Tags: datasheet abstract.. |
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First line: transistor 2n2270 GENERAL PURPOSE TABLE SILICON PLANAR GENERAL PURPOSE TRANSISTORS devices shown this table general purpose transistors designed small medium signal, medium power amplification from D.C. radio frequencies Commercial, Industrial Military equipments. These transistors particularly suit Abstract: .. 250 100 50 50 3700t 3700t TO-39 TO-39 BC160 BC160 BFY50 BFY50 80 35 1000 0-2 150 15 30 — 150 60 50 800 TO-39 TO-39 - 2N1613 75 50 1000 1 -5 150 15 40 120 150 60 50 800 TO-39 TO-39 — 2N1711 2N1711 75 50 1000 1 -5 150 15 100 300 150 70 50 800 TO-39 TO-39 — ZT89 ZT89 .. Tags: transistor 2n2270 datasheet abstract.. |
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First line: SWITCHING TABLE SILICON PLANAR MEDIUM HIGH SPEED SWITCHING TRANSISTORS devices shown this table characterised general medium voltage, medium high speed switching applications Commercial, Industrial Military equipments. devices listed order decreasing Breakdown Voltage (Vceo). decreasing Collector Cu Abstract: .. 360 150 TO-39 TO-39 — BCY65E BCY65E 60 100 0 35 10 0 -25 120 460 2 125 10 150 800 10 TO-18 TO-18 BCY77 BCY77 2N1613 50 1000 1 5 150 15 40 120 150 60 50 note 1 TO-39 TO-39 — 2N2270 2N2270 45 1000 0 9 150 15 50 200 150 60 50 note 1 TO-39 TO-39 — ZT83 ZT83 .. Tags: datasheet abstract.. |
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First line: 2n1547 2N2143A* 2N2160 2N2147 2N1906* DIGITRON ELECTRONIC CORP 2045^07 -0\ Page DIQITRON ELECTRONIC CORF Hillside Avenue Springfield, Jersey 07081 201-379-9016 201-379-9019 201-467-8065 JOHN SCHWARTZ ENGINEERING DIGITRON ELECTRONICS, CORP, Hillside Avenue Springfield, 07081 Abstract: .. 2N1820 2N1820 2N2108 2N2108 2N2220 2N2220 2N1547 2N1547 2N1612 2N1612 2N1701 2N1701 2N1890 2N1890 2N2137 2N2137 2N2220A 2N2220A 2N1547A 2N1547A 2N1613 2N1702 2N1702 2N1891 2N1891 2N2137A 2N2137A 2N2221 2N2221 2N1548 2N1548 2N1613A 2N1703 2N1703 2N1892 2N1892 2N2138 2N2138 2N2221A 2N2221A 2N1549 2N1549 2N1613B 2N1704 2N1704 2N1905 2N1905 2N2138A 2N2138A .. Tags: 2N1906* 2N2147 2N2160 2N2143A* 2n1547 datasheet abstract.. |
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First line: LEVEL TABLE SILICON PLANAR LEVEL TRANSISTORS devices shown this table level transistors designed small medium signal, medium power amplification from radio frequencies Commercial, Industrial Military equipments. These transistors particularly suitable Audio Frequency Amplifiers, Driver Output Stages Abstract: .. 250 100 50 50 3700* TO-39 TO-39 BC160 BC160 BFY50 BFY50 80 35 1000 0.2 150 15 30 - 150 60 50 800 TO-39 TO-39 - 2N1613 75 50 1000 1.5 150 15 40 120 150 60 50 800 TO-39 TO-39 - 2N1711 2N1711 75 50 1000 1.5 150 15 100 300 150 70 50 800 TO-39 TO-39 - BSY53 BSY53 75 30 .. Tags: datasheet abstract.. |
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First line: LEVEL TABLE SILICON PLANAR LEVEL TRANSISTORS devices shown this table level transistors designed small medium signal, medium power amplification from radio frequencies Commercial, Industrial Military equipments. These transistors particularly suitable Audio Frequency Amplifiers, Driver Output Stages Abstract: .. 250 100 50 50 3700* TO-39 TO-39 BC160 BC160 BFY50 BFY50 80 35 1000 0.2 150 15 30 - 150 60 50 800 TO-39 TO-39 - 2N1613 75 50 1000 1.5 150 15 40 120 150 60 50 800 TO-39 TO-39 - 2N1711 2N1711 75 50 1000 1.5 150 15 100 300 150 70 50 800 TO-39 TO-39 - ZT89 ZT89 70 70 500 .. Tags: datasheet abstract.. |
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First line: 2N6428(A) AMER PHILIPS/DISCRETE bbS3131 GQlbna T-2.7-0J Small Signal Devices GENERAL PURPOSE SWITCHING TRANSISTORS TYPES TYPE v"-." (typ) r=;"" (n>A) CmA) (MHz) (mA) 2N1613 TO-39 Abstract: .. CmA MHz †mA 2N1613 TO-39 TO-39 50 500 40 120 150 60 50 2N1711 2N1711 TO-39 TO-39 50 1000 100 300 150 70 50 2N1893 2N1893 TO-39 TO-39 80 500 40 120 150 — — 2N2218 2N2218 TO-39 TO-39 30 800 40 120 150 250 20 2N2219 2N2219 TO-39 TO-39 30 800 100 . 300 150 250 .. Tags: 2N6428(A) datasheet abstract.. |
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First line: 2N3645* 2N915 2N3644 2N4355 2N3645 FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER SWITCHING TRANSISTORS ASCENDING VqEO) (Cont'd) (ALSO LEVEL HIGH VOLTAGE SECTION) Item larity VCEO (VCER) (hfe) Min/Max VCE(sat) Package 2N4403 100/300 0.40 TO-92 BCY71 100/600 0.25 TO-18 2N3502 115/300 0. Abstract: .. 1.00 10 3.5 250 — 360 1.2 TO-18 TO-18 15 2N718A 2N718A 50 40/120 150 1.50 150 25 60 — 500 1.8 TO-18 TO-18 16 2N1613 50 40/120 150 1.50 150 25 80 — 800 3.0 TO-39 TO-39 17 2N3053 2N3053 50 50/250 150 1.40 150 15 100 — ■— 5.0 .. Tags: 2N3645 2N4355 2N3644 2N915 2N3645* datasheet abstract.. |
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First line: 2n1304 2N1307 2N2160 2N2147 Electronic Valves Aero Services London England 1972-73 Continued Minimum value Average value Abstract: .. medium speed logic 0.25* 2N1554 2N1554 G/PNP T03 100W151 100W151 6kc12 6kc12 Â -60 30-60 10A AF power 1.25 2N1613 S/NPN T05 800mW 800mW 60mci11 60mci11 + 75 40-120 150mA 150mA G.P. and Switching 0.17* 2N1711 2N1711 S/NPN T05 800mW 800mW 70mc 70mc "1 + 75 .. Tags: 2N2147 2N2160 2N1307 2n1304 datasheet abstract.. |
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First line: Metal High Current Amplifiers Case Outlines Device Type Case Maximum ratings hFEl min. max. hFE2 min. max. VCE(sat) Available Notes BFT39 BFT40 BFT41 T039 T039 T039 1000 1000 1000 1000 1000 1000 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 T039 T039 T039 1000 1000 1000 1000 1000 1000 BFT53 BFT54 BFT55 10mA 1 Abstract: .. 0.15 0.15 0.15 0.5 0.5 0.5 1 hFE 20 min at 100|iA I Available in 3 hFE Bands at lc=150 mA 2N697 2N697 2N1613 2N1711 2N1711 NPN NPN NPN T039 T039 T039 T039 T039 T039 60 40 5 75 50 7 75 50 7 1000 1000 1000 150 40 120 150 40 120 150 100 300 500 .. Tags: datasheet abstract.. |
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First line: cv8616 2N2907 JAN motorola 2N2219 BC107 transistor transistor 2N4033 METAL SMALL-SIGNAL TRANSISTORS (continued) General-Purpose Amplifiers (continued) v(BR)CEO Device Volts Comments Package Type TO-18 N3963 0.01 N4026 1000 2N4029 1000 Abstract: .. products to CECC 50000 All CECC types are available to assessment levels E, F, L 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC .. Tags: transistor 2N4033 BC107 transistor motorola 2N2219 2N2907 JAN cv8616 datasheet abstract.. |
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First line: 1005 NPN SEMICONDUCTOR DICE MEDIUM POWER VCBO Vceo 'cBO VcE(sat) Max. Cobo Chip geometry Dice type Min. Min. Vlax. Min. Max. Volts Volts Volts Min. Max. Volts Volts ZTX653 1000 ZTX453 ZT91 2N1893 Abstract: .. 80 60 100 60 50 150 150 10 0.35 150 15 150 15 G9 BFY50 BFY50 80 35 500 80 30 - 150 10 0.20 150 15 60 12 G9 2N1613 75 50* 10 60 40 120 150 10 1.5 150 15 - 25 G9 2N1711 2N1711 75 50* 10 60 100 300 150 10 1.5 150 15 70 15 G9 ZT90 ZT90 60 60 10 60 .. Tags: 1005 NPN datasheet abstract.. |
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First line: 706a SEMELAB 0133107 SULB .^I.W.XV".- -naimiffy-iiTrtim tWlnEr^-T* in.,. lypeNo. Option"'" Polarity Package VcE0 hpE@ VCE/'C Abstract: .. 15 50M 0 2N1613 HI-REL NPN * T039 T039 50 0.5 40-120 10/0.15 70M 0. '2N1616 2N1616 HI^REL NPN * T061 T061 60 5 15-75 12/2 3M 8! '2N1617 2N1617 HI-REL NPN * T061 T061 70 5 15-75 12/2 3M 8i '2N1618 2N1618 HI-REL NPN * T061 T061 80 5 15-75 12/2 3M 8! .. Tags: 706a N1711 datasheet abstract.. |
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First line: LEVEL TABLE SILICON PLANAR LEVEL TRANSISTORS devices shown this table level transistors designed small medium signal, medium power amplification from radio frequencies Commercial, Industrial Military equipments. These transistors particularly suitable Audio Frequency Amplifiers, Driver Output Stages Abstract: .. 250 100 50 50 3700* TO-39 TO-39 BC160 BC160 BFY50 BFY50 80 35 1000 0.2 150 15 30 - 150 60 50 800 TO-39 TO-39 - 2N1613 75 50 1000 1.5 150 15 40 120 150 60 50 800 TO-39 TO-39 - 2N1711 2N1711 75 50 1000 1.5 150 15 100 300 150 70 50 800 TO-39 TO-39 - BSY53 BSY53 75 30 .. Tags: datasheet abstract.. |
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First line: MM6427 2N2222A JANTXV transistor 2N4033 BSS73 2N2222A motorola METAL SMALL-SIGNAL TRANSISTORS (continued) Darlington Transistors These transistors characterized very high gain input impedance applications. Devices monolithic construction. V(BR) (sat) Device Volts Volts Package Type TO-18 MM6427 5000 Abstract: .. products to CECC 50000 All CECC types are available to assessment levels E, F, L 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC .. Tags: 2N2222A motorola BSS73 transistor 2N4033 2N2222A JANTXV MM6427 datasheet abstract.. |
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First line: Texas Instruments High Current Amplifiers Maximum ratings Device hFE1 hFE2 VCE(sat) Available Type Case Notes min. max. min. max. T018 BFT39 T039 1000 1000 BFT29 BFT40 T039 1000 1000 BFT30 Abstract: .. 1b0 40 240 500 20 — 120 0.15 0.5 2N697 2N697 NPN T039 T039 60 40 5 1000 150 40 120 — — — 50 0.15 1.5 2N1613 NPN T039 T039 75 50 7 1000 150 40 120 500 20 — 60 0.15 1.5 hFE 20 min at 100yA 100yA 2N1711 2N1711 NPN T039 T039 75 50 7 1000 150 100 300 500 40 .. Tags: datasheet abstract.. |
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First line: LEVEL TABLE SILICON PLANAR LEVEL TRANSISTORS devices shown this table level transistors designed small medium signal, medium power amplification from radio frequencies Commercial, Industrial Military equipments. These transistors particularly suitable Audio Frequency Amplifiers, Driver Output Stages Abstract: .. 250 100 50 50 3700* TO-39 TO-39 BC160 BC160 BFY50 BFY50 80 35 1000 0.2 150 15 30 - 150 60 50 800 TO-39 TO-39 - 2N1613 75 50 1000 1.5 150 15 40 120 150 60 50 800 TO-39 TO-39 - 2N1711 2N1711 75 50 1000 1.5 150 15 100 300 150 70 50 800 TO-39 TO-39 - BSY53 BSY53 75 30 .. Tags: datasheet abstract.. |
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