NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N1613 | Advanced Semiconductor, Inc. | Silicon Transistor Selection Guide |
5 pages, |
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| 2N1613 | Central Semiconductor | BJT, NPN, Small Signal Transistor, IC 0.5A - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 |
1 pages, |
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| 2N1613 | Central Semiconductor | NPN Metal Can Switching and General Purpose Transistors |
3 pages, |
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| 2N1613 | Central Semiconductor | NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE |
3 pages, |
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| 2N1613 | Continental Device India Limited | Semiconductor Device Data Book 1996 |
1 pages, |
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| 2N1613 | Crimson Semiconductor | Transistor Selection Guide |
36 pages, |
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| 2N1613 | Diode Transistor Co., Inc. | SMALL SIGNAL TRANSISTORS |
1 pages, |
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| 2N1613 | Fairchild Semiconductor | NPN Small Signal General Purpose Amplifiers - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 |
10 pages, |
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| 2N1613 | Fairchild Semiconductor | Misc. Data Book Scans 1975/76 |
3 pages, |
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| 2N1613 | Fairchild Semiconductor | Full Line Condensed Catalogue 1977 |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Qualified Level JAN JANTX JANTXV 2N1613 2N1613L 2N718A 2N718A MAXIMUM RATINGS Ratings Symbol , 2N1613, L and 10.3 mW/0C for 2N718A 2N718A for TC > +250C TO-5* 2N1613L *See appendix A for package , 10 Adc 120101 Page 1 of 2 2N718A 2N718A, 2N1613, 2N1613L JAN, SERIES ELECTRICAL , +250C (1) 2N718A 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N718A 2N1613, L Operating & Storage Junction , TO-39 (TO-205AD)* 2N1613 THERMAL CHARACTERISTICS Characteristics Thermal Resistance ... | Original |
2 pages, |
2N718A 2N1613L 2N1613 JANTX 2n1613 MIL-PRF-19500/181 2N1613 MIL-PRF-19500/181 abstract |
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| Abstract: Qualified Level JAN JANTX JANTXV 2N1613 2N1613L 2N718A 2N718A MAXIMUM RATINGS Ratings Symbol 2N718A 2N718A 2N1613, L 2N718A 2N718A 2N1613, L @ T C = +250C (2) Operating & Storage Junction Temperature , 10 Adc 120101 Page 1 of 2 2N718A 2N718A, 2N1613, 2N1613L JAN, SERIES ELECTRICAL , Vdc Vdc mAdc PT 0.5 0.8 1.8 3.0 T J, T stg Max. TO-39 (TO-205AD)* 2N1613 0 , , Junction-to-Case 2N718A 2N718A 97 RJC 2N1613, L 58 0 0 1) Derate linearly 4.57 mW/ C for 2N1613, L and 2.85 mW ... | Original |
2 pages, |
2N1613L 2N1613 Data Sheet 2N718A 2N1613 MIL-PRF-19500/181 MIL-PRF-19500/181 abstract |
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| Abstract: TECHNICAL DATA 2N718A 2N718A JAN, JTX, JTXV 2N1613 JAN, JTX, JTXV 2N1613L JAN, JTX, JTXV MIL-PRF , 2N1613, L and 10.3 mW/0C for 2N718A 2N718A for TC > +250C 2N1613L TO-5 ELECTRICAL CHARACTERISTICS (TC = , ) 689-0803 03/98 REV: F Page 1 of 2 2N718A 2N718A, 2N1613, 2N1613L JAN, SERIES ELECTRICAL CHARACTERISTICS , Power Dissipation @ TA = +250C (1) 2N718A 2N718A 2N1613, L @ TC = +250C(2) 2N718A 2N718A 2N1613, L Operating & , W 0 C 2N1613 TO-39 (TO-205AD) THERMAL CHARACTERISTICS Characteristics Symbol Max. ... | Original |
2 pages, |
2N718A 2N1613L 2N1613 MIL-PRF-19500/181 2N718A abstract |
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| Abstract: NPN 2N1613  2N1711 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 2N1711 are NPN , 58 219 °C/ W °C/ W 1/3 NPN 2N1613  2N1711 2N1711 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEB0 VCBO Ratings DC Current Gain 2N1711 2N1711 2N1613 Small Signal Current Gain 2N1711 2N1711 2N1613 hje Input Impedance 2N1711 2N1711 2N1613 hre Reverse VoltageRatio 2N1711 2N1711 2N1613 hoe Unit - - 10 nA - - 10 uA 75 - 10 5 - IC=10 ... | Original |
3 pages, |
2N1613 2N1711 2N1613 abstract |
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| Abstract: Temperature - 65 to 200 °C January 1989 1/3 285 2N1613-2N1711 3QE D m THERMAL DATA S G S-THOMSON _ T^TEa? , %. 2/3 286 SGS-THOMSON tKîdB®aillSTRWI®8 3DE D â- 7^2^237 DD311QS DD311QS â-¡ â- 2N1613-2N1711 S G S-THOMSON , 3QE D â- 7^237 DD311D3 DD311D3 7 â- £ZT SGS-THOMSON 2N1613 _2N1711 2N1711 "TT^-thomson^ SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 , 150 °C 10 10 nA HA Iebo Emitter Cutoff Current (lc=0) Veb = 5 V for 2N1613 for 2N1711 2N1711 10 5 nA nA V ... | OCR Scan |
3 pages, |
2N1613 2N1711 DD311D3 DD311D3 abstract |
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| Abstract: pulsed beta. RCA-2N2102 RCA-2N2102 is a direct replacement for the 2N1613. In addition, because of its Junction , sustaining voltage vs. base-to• emitter resistance for 2N1613. > x ul > !» o 120 S § no a common-emitter , G E SOLID STATE [- High Speed Power Transistors 2N1613, 2N2102 2N2102 File Number 106 Medium-Power , decades of lc TERMINAL DESIGNATIONS JEDEC TO-20SAD The RCA-2N1613 and 2N2102 2N2102 are silicon n-p-n planar , RATINGS, Absolute-Maximum Values: 2N2102 2N2102 2N1613 ... | OCR Scan |
5 pages, |
2n2102 replacement iz667 2N1613 rca 2n2102 2N2102 2n1613 replacement 2N1613 abstract |
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| Abstract: Datasheet 2N1613 2N1711 2N1711 Central 2N18C 2N18C Semiconductor Corp. NPN Silicon Transistor 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 JEDEC T0-39 T0-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N1613, 2N1711 2N1711 , switching applications. MAXIMUM RATINGS (Ta=25°C unless otherwise noted) 2N1613 2N1711 2N1711 2N1893 2N1893 Col , CHARACTERISTICS (t/^=25°C) 2N1613 2N1711 2N1711 2N1893 2N1893 Symbol Test Conditions Min Max Min Max Min Max ... | OCR Scan |
1 pages, |
transistor 2N1711 2N1613 2N1711 2N1893 2N18C T0-39 2N1613 abstract |
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| Abstract: /181 DEVICES LEVELS 2N718A 2N718A 2N1613 2N1613L JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS , number 3 - collector. FIGURE 2. Physical dimensions 2N1613 and 2N1613L (similar to TO-5 and TO-39). , Dissipation @ TC = +25°C 2N718A 2N718A 2N1613, L 2N718A 2N718A 2N1613, L Symbol VCEO VCBO VEBO IC PT PT TJ, Tstg RJC Min. 30 , 2N1613, L (1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A 2N718A for TA > +25°C (2) Derate linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A 2N718A for TC > +25°C ELECTRICAL ... | Original |
4 pages, |
2n1613 2n1613 equivalent MIL-PRF-19500/181 MIL-PRF-19500/181 abstract |
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| Abstract: C2300L C2300L 45 80 6 >35 (5/10) 2N1613 1500 C2300H C2300H 45 80 6 >75 (5/10) 2N1613 1500 C2350L C2350L 35 65 5 >40 (5/10 ... | OCR Scan |
1 pages, |
Transistor BC107 2N918 2N929 BC107 bc107 transistor BCY70 C1100L C1200H C1200L C2160 C2180H C2180L c240 2N1613 datasheet abstract |
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| Abstract: 2N 1613 2N 1711 NBJ SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N1613 AND 2N1711 2N1711 ARE NFN SILIC ON* PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS. ABSOLUTE MAXIMUM RATINGS wm Collector-Base Voltage Collector-Bnitter Voltage($3E , otherwise noted) m o o PARAMETER SYMBOL 2N1613 MIN MAX Collector-Base Breakdown Voltage BVCBO , Current Output Conductance symbol! Cob Cib NF hib brb hf hob 2N1613 min max 24 4 0*1 0.1 $5 80 12 34 8 3 3 ... | OCR Scan |
2 pages, |
2N1711 2N1613 2N1613 abstract |
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| Abstract: 2n1711 Impulsions 2/6 138 2N1613, 2N 1711 DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES ... | OCR Scan |
6 pages, |
H12B 2N1613 datasheet abstract |
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| Abstract: 2N1613 2M 1711 SILICON PLANAR NPN SWITCHES AND UNIVERSAL AMPLIFIERS The 2N 1613 and 2N 1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high , mm Collector connectod to case (sim. to TO-39) 7/76 238 2N1613 2N 1711 THERMAL DATA 'th j-case , # lc = 10 mA VCE = 10V Tamb = 55°C 20 35 - 239 2N1613 2N1711 2N1711 ELECTRICAL CHARACTERISTICS , impedance lc = 1 mA VCB = 5V f = 1 kHz 24 27 34 il 240 2N1613 2N1711 2N1711 ELECTRICAL CHARACTERISTICS ... | OCR Scan |
4 pages, |
transistor 2N 238 2N1613 2N1711 2N1613 abstract |
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| Abstract: 2M1711 5V f = 1 kHz 24 27 34 a 216 2N1613 2N 1711 ELECTRICAL CHARACTERISTICS (continued ... | OCR Scan |
4 pages, |
2N1613 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 0718A WT NPN TO-18 STD 0.5 0.5 75 30 7 JAN 2N1613 WT NPN TO-39 STD 0.8 0.5 75 30 7 JANTX 2N1613 WT NPN TO-39 STD 0.8 0.5 75 30 7 JANTXV 2N1613 WT NPN TO-39 STD 0.8 0.5 75 30 7 JAN 2N1613L WT NPN TO-5 STD 0.8 0.5 75 30 7 JANTX 2N1613L WT NPN TO-5 STD 0.8 0.5 75 30 7 JANTXV 2N1613L WT NPN TO-5 STD 0.8 0 N1711S N1711S N1711S N1711S WT NPN TO-39 STD 0.8 0.5 75 30 7 2N1613 WT NPN TO-5 STD 0.8 0.5 75 30 7 2N1711 2N1711 2N1711 2N1711 WT NPN TO-5 www.datasheetarchive.com/files/microsemi/products/npn/61_30.htm |
Microsemi | 04/01/1999 | 19.69 Kb | HTM | 61_30.htm |
| ST | SWITCHES AND UNIVERSAL AMPLIFIERS 2N1613 SWITCHES AND UNIVERSAL AMPLIFIERS 1613 2N1711 2N1711 2N1711 2N1711 January 1989 SWITCHES AND UNIVERSAL AMPLIFIERS The 2N1613 and 2N1711 2N1711 2N1711 2N1711 are silicon planar nA m A I EBO Emitter Cutoff Current (I C = 0) V EB = 5 V for 2N1613 for 2N1711 2N1711 2N1711 2N1711 10 5 nA nA V (BR) CBO -emitter Saturation Voltage I C = 150 mA I B = 15 mA 0.95 1.3 V h FE * DC Current Gain for 2N1613 I C = 0.01 mA I C 65 300 h fe Small Signal Current Gain for 2N1613 I C = 1 mA f = 1 kHz for 2N1711 2N1711 2N1711 2N1711 I C = 1 mA f = 1 k www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3241-v1.htm |
STMicroelectronics | 02/04/1999 | 5.29 Kb | HTM | 3241-v1.htm |
| ST | SWITCHES AND UNIVERSAL AMPLIFIERS 2N1613 SWITCHES AND UNIVERSAL AMPLIFIERS 1613 2N1711 2N1711 2N1711 2N1711 January 1989 SWITCHES AND UNIVERSAL AMPLIFIERS The 2N1613 and 2N1711 2N1711 2N1711 2N1711 are silicon planar nA m A I EBO Emitter Cutoff Current (I C = 0) V EB = 5 V for 2N1613 for 2N1711 2N1711 2N1711 2N1711 10 5 nA nA V (BR) CBO -emitter Saturation Voltage I C = 150 mA I B = 15 mA 0.95 1.3 V h FE * DC Current Gain for 2N1613 I C = 0.01 mA I C 65 300 h fe Small Signal Current Gain for 2N1613 I C = 1 mA f = 1 kHz for 2N1711 2N1711 2N1711 2N1711 I C = 1 mA f = 1 k www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3241-v2.htm |
STMicroelectronics | 14/06/1999 | 5.25 Kb | HTM | 3241-v2.htm |
| SWITCHES AND UNIVERSAL AMPLIFIERS 2N1613 Document Format Size 1613 2N1711 2N1711 2N1711 2N1711 January 1989 SWITCHES AND UNIVERSAL AMPLIFIERS The 2N1613 and 2N1711 2N1711 2N1711 2N1711 are silicon EB = 5 V for 2N1613 for 2N1711 2N1711 2N1711 2N1711 10 5 nA nA V (BR) CBO Collector-base Breakdown .95 1.3 V h FE * DC Current Gain for 2N1613 I C = 0.01 mA I C = 0.1 mA I C = 10 Current Gain for 2N1613 I C = 1 mA f = 1 kHz for 2N1711 2N1711 2N1711 2N1711 I C = 1 mA f = 1 kHz V CE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3241-v3.htm |
STMicroelectronics | 25/05/2000 | 7.07 Kb | HTM | 3241-v3.htm |
| SWITCHES AND UNIVERSAL AMPLIFIERS 2N1613 Document Format Size Document 30/01/1995 5 Raw Text Format 2N1613 2N1711 2N1711 2N1711 2N1711 January 1989 SWITCHES AND UNIVERSAL AMPLIFIERS The 2N1613 and 2N1711 2N1711 2N1711 2N1711 are silicon planar epitaxial NPN transistors in = 0) V EB = 5 V for 2N1613 for 2N1711 2N1711 2N1711 2N1711 10 5 nA nA V (BR) CBO Collector-base Breakdown -emitter Saturation Voltage I C = 150 mA I B = 15 mA 0.95 1.3 V h FE * DC Current Gain for 2N1613 I C = 0 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3241.htm |
STMicroelectronics | 20/10/2000 | 7.55 Kb | HTM | 3241.htm |
| .5 40 15 4.5 2N1506 2N1506 2N1506 2N1506 TO-5 STD 3 0.5 60 40 4 2N1613 10 2N1613 TO-5 STD 0.8 0.5 75 30 7 2N1711 2N1711 2N1711 2N1711 .5 100 100 6 2N1613 JAN TO-39 STD 0.8 0.5 75 30 7 2N1613 JANTX TO-39 STD 0.8 0.5 75 30 7 2N1613 JANTXV TO-39 STD 0.8 0.5 75 30 7 2N1613L JAN TO-5 STD 0.8 0 www.datasheetarchive.com/files/microsemi/products/npn/59_0.5.htm |
Microsemi | 07/12/1999 | 52.97 Kb | HTM | 59_0.5.htm |
| 2N1506 2N1506 2N1506 2N1506 PPC Inc. NPN Transistor 2N1613 Watertown NPN Transistor JAN 2N1613 Watertown NPN Transistor JANTX 2N1613 Watertown NPN Transistor JANTXV 2N1613 Watertown NPN Transistor 2N1613A PPC Inc. NPN Transistor JAN 2N1613L Watertown NPN Transistor JANTX 2N1613L Watertown NPN Transistor JANTXV 2N1613L Watertown NPN www.datasheetarchive.com/files/microsemi/products/partno/2n1-v1.htm |
Microsemi | 03/12/1999 | 48.58 Kb | HTM | 2n1-v1.htm |
| 22963 2N1490 2N1490 2N1490 2N1490 PPC Inc. NPN Transistor 22964 2N1506 2N1506 2N1506 2N1506 PPC Inc. NPN Transistor 18703 2N1613 Watertown NPN Transistor 19753 JAN 2N1613 Watertown NPN Transistor 19754 JANTX 2N1613 Watertown NPN Transistor 19755 JANTXV 2N1613 Watertown NPN Transistor 22965 2N1613A PPC Inc. NPN Transistor 19756 JAN 2N1613L Watertown NPN Transistor 19757 JANTX 2N1613L Watertown NPN Transistor 19758 JANTXV 2N1613L Watertown NPN www.datasheetarchive.com/files/microsemi/products/partno/2n1.htm |
Microsemi | 30/12/1998 | 35.92 Kb | HTM | 2n1.htm |
| .6 0.5 100 60 7 JANTXV 2N2060L 2N2060L 2N2060L 2N2060L WT NPN TO-77 STD 0.6 0.5 100 60 7 JAN 2N1613 WT NPN TO-39 STD 0.8 0.5 75 30 7 JANTX 2N1613 WT NPN TO-39 STD 0.8 0.5 75 30 7 JANTXV 2N1613 WT NPN TO-39 STD 0.8 0.5 75 30 7 JAN 2N1613L WT NPN TO-5 STD 0.8 0.5 75 30 7 JANTX 2N1613L WT NPN TO-5 STD 0.8 0.5 75 30 7 JANTXV 2N1613L WT NPN TO-5 STD 0.8 0.5 75 30 7 2N1613 WT NPN TO-5 STD 0.8 0.5 75 30 7 JAN 2N1890 2N1890 2N1890 2N1890 WT NPN TO-5 STD 0 www.datasheetarchive.com/files/microsemi/products/bat/npn/133_60.htm |
Microsemi | 04/01/1999 | 26.19 Kb | HTM | 133_60.htm |
| No abstract text available www.datasheetarchive.com/download/18442035-672353ZC/2n1613.jpg |
User Photos | 23/05/2012 | 7.19 Kb | JPG | 2n1613.jpg |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N1613 | N/A | AMH | |
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| 2N1613-46 | N/A | Medium Power, General Purpose | |
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| 2N1613/51 | Transitron Electronic Corp. | Si NPN Lo-Pwr BJT | |
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| 2N1613A | N/A | Si NPN Power BJT | |
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| 2N1613B | N/A | AMH | |
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| 2N1613D | N/A | Si NPN Lo-Pwr BJT | |
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| 2N1613DA(CHIP) | Zetex Semiconductors | Si NPN Power HF BJT | |
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| 2N1613DB(CHIP) | Zetex Semiconductors | Si NPN Power HF BJT | |
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| 2N1613DC(CHIP) | Zetex Semiconductors | Si NPN Power HF BJT | |
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| 2N1613+JAN | Defense Supply Center Columbus | Si NPN Lo-Pwr BJT | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| TN2219A | TN2219A Buy | 2N1613 Buy | ON Semiconductor | Close | Small Signal | NPN General Purpose Amplifier |
| TN3019A | TN3019A Buy | 2N1613B Buy | ON Semiconductor | Close | Small Signal | NPN General Purpose Amplifier |
| NTE Electronics Part | Industry Part |
| NTE123AP Buy | 2N1613/46 Buy |
| NTE128 Buy | 2N1613 Buy |
| NTE128 Buy | 2N1613A Buy |
| NTE128 Buy | 2N1613L Buy |
| NTE128 Buy | 2N1613S Buy |
| NTE154 Buy | 2N1613B Buy |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| Part | Similar Part | Notes |
| 2N1613 Buy | 2N1092 Buy | |
| 2N1613 Buy | 2N1613-46 Buy | |
| 2N1613 Buy | 2N1613L Buy | |
| 2N1613 Buy | 2N1613S Buy | |
| 2N1613 Buy | 2N1990 Buy | |
| 2N1613 Buy | 2N2297 Buy | |
| 2N1613 Buy | 2N2389 Buy | |
| 2N1613 Buy | 2N2390 Buy | |
| 2N1613 Buy | 2N2410 Buy | |
| 2N1613 Buy | 2N6016 Buy |