NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| AD-R291ER | Analog Devices | Low Noise Micropower Precision Voltage Reference (2.5 V) | 
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| ADR291ER | Analog Devices | IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8, MS-012AA, SOIC-8, Voltage Reference |
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| MAX291ESA+T | Maxim Integrated Products | IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDSO8, SO-8, Active Filter |
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| MAX291EPA+ | Maxim Integrated Products | IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDIP8, PLASTIC, DIP-8, Active Filter |
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| MAX291ESA+ | Maxim Integrated Products | IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDSO8, SOP-8, Active Filter |
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| Part | Manufacturer | Description | Type | Ordering |
| 291E | Hittite Microwave Corp. | 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz |
6 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: HMC291 HMC291 / 291E v02.0402 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz Designer's , Fax: 978-250-3373 Order On-line at www.hittite.com HMC291 HMC291 / 291E v02.0402 4 dB LSB GaAs MMIC , Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 47 HMC291 HMC291 / 291E , On-line at www.hittite.com HMC291 HMC291 / 291E v02.0402 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR , XXXX [2] 291E XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature ... | Original |
6 pages, |
HMC291 291E HMC291 abstract |
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| Abstract: HMC291 HMC291 / 291E v02.0402 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz , Fax: 978-250-3373 Order On-line at www.hittite.com HMC291 HMC291 / 291E v02.0402 4 dB LSB GaAs MMIC , / 291E v02.0402 ATTENUATORS - SMT 5 Truth Table 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR , : 978-250-3373 Order On-line at www.hittite.com HMC291 HMC291 / 291E v02.0402 4 dB LSB GaAs MMIC 2-BIT DIGITAL , XXXX [2] 291E XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature ... | Original |
6 pages, |
HMC291 0402 resistors 291E HMC291 abstract |
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| Abstract: types Electrical schematics FN 291 (one fuse) FN 292 (have second fuse, shown dotted) FN 291E ... | Original |
2 pages, |
IEC 292-1 EN 133200 291E fusible datasheet abstract |
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| Abstract: 817E03 929E-06 Single Event Effects Test Report R5, 100V, SE, N R5, 130V, SE, N R5, 150V, SE, N R5, 60V, N R5, 30V, N March 2000 - B.N.L. 233 Kansas Street El Segundo CA 90245 Fax-On-Demand 310 252 7100 Website WWW.irf.com International Rectifier Corp. SEE Test Report March 2000 - B.N.L. Table of Contents Introduction . 1 Test Method . ... | Original |
50 pages, |
47AG mosfet 9420 vqe 24e WE VQE 11 E VQE 13E WE VQE 23 F IR 134E vqe 14e ESD test plan datasheet abstract |
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| Abstract: NE=2.5 BR=20.4 VAR=2.76 IKR=1.98e� ISC=2.91e� + NC=1.426 RB=55 IRB=1.12e� RBM=48 RE=6 RC=11 CJE=7.98e� ... | Original |
12 pages, |
n09c k0206 C1216 K0105 k0306 k0304 K0811 k0307 transistor K0712 C1116 K0107 K0412 k0207 N12c K0109 AND8077/D AND8077/D abstract |
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| Abstract: IKR=1.98e� ISC=2.91e� + NC=1.426 RB=55 IRB=1.12e� RBM=48 RE=6 RC=11 CJE=7.98e� + VJE=.8867 MJE=.2868 ... | Original |
12 pages, |
N15C C0812 transistor k0307 k0207 K0107 transistor c1013 AND8077/D AND8077/D abstract |
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| Abstract: 0053 5B21 0054 291F 0055 291E 0056 0057 0058 0059 005A 005B 005C 005D 1921 1920 9004 , subwfb 0065 291F 0066 291E 0067 8804 0000 0000 0068 901A x2 x1,wreg x1 x1 x0,wreg x0 , 0120 2922 8422 291D 291C 291E 291F 0121 0122 0123 0124 0125 0126 0127 0128 0129 , 4-83 4 3 Math Routines 0138 0139 013A 013B 291D 291C 291E 291F 0000 ENDM ... | Original |
67 pages, |
PIC17C42 MPASM code macro endm c08f AN544 041c 001C 001B binary to bcd conversion AN544 abstract |
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| Abstract: DS00544D-page 4-11 AN544 AN544 0050 2922 0051 8422 0052 5A20 0053 5B21 0054 291F 0055 291E 0056 , © 1997 Microchip Technology Inc. AN544 AN544 0065 0065 0065 291F 0066 291E 0067 8804 0000 0000 , 0133 0134 0135 0136 2922 8422 291D 291C 291E 291F 8804 1B1A 1B1B 1B1C 1B1D 6A19 ... | Original |
51 pages, |
PIC17C42 MPASM code macro endm AN544 2F27 BCD DIVISION USING MPASM C047 b055 6A18 AN544 abstract |
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| Abstract: DS00544D-page 4-11 AN544 AN544 0050 2922 0051 8422 0052 5A20 0053 5B21 0054 291F 0055 291E 0056 , © 1997 Microchip Technology Inc. AN544 AN544 0065 0065 0065 291F 0066 291E 0067 8804 0000 0000 , 0133 0134 0135 0136 2922 8422 291D 291C 291E 291F 8804 1B1A 1B1B 1B1C 1B1D 6A19 ... | Original |
50 pages, |
PIC17C42 E311 0029 C08F AN544 2F27 1C18 C047 b055 AN544 abstract |
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| Abstract: DS00544D-page 4-11 AN544 AN544 0050 2922 0051 8422 0052 5A20 0053 5B21 0054 291F 0055 291E 0056 , © 1997 Microchip Technology Inc. AN544 AN544 0065 0065 0065 291F 0066 291E 0067 8804 0000 0000 , 0133 0134 0135 0136 2922 8422 291D 291C 291E 291F 8804 1B1A 1B1B 1B1C 1B1D 6A19 ... | Original |
50 pages, |
"binary to bcd" 2F27 1A21 AN544 E03B 022d PIC17C42 binary bcd conversion application note diode 9A04 AE1B b055 BCD DIVISION USING MPASM C047 pn sequence generator AN544 abstract |
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| Abstract: LTR. DESCRIPTION DATE APPROVED A NEW DRAWING 32 17 r^ r^ r^ r^ r^ r^ r£h_£h_£h_£h_£h_ W KjJ W ky W ky V W ky W ky 1 2 16 --D- El fannnny 'annnnn A2 A Al L 3*-IV -B 32 PIN INCHES Millimeters MIN, MAX, MIN, MAX, A ,165 ,190 4,191 4,826 Ai ,020 ,035 ,508 ,889 AP ,140 ,160 3,556 4,064 b ,015 ,021 ,381 ,533 c ,008 ,014 ,200 ,356 D 1,645 1,665 41,783 42,291 E ,600 BSC 15,24 m Bsc Ei ,530 ,550 13,462 13,970 e ,100 BSC 2,54 BSC L ,120 ,140 3,048 3,556 ALL DIMENSIONS ARE IN INCHES DDC. ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: MIL-DTL28840 MIL-DTL28840 M28840/17 M28840/17 Plug Connector with Straight Strain Relief Military Designator M28840/17 M28840/17 A Class B Contact Style P, S, F, G, D or E Shell Size Class D - Code Letter A Class DS - Code Letter B G 1 P Insert Arrangement 1 Key Position 1, 2, 3, 4, 5 and 6 L STRAIN RELIEF MARKED WITH M28840/1 M28840/1 PART NUMBER F ØQ B THREAD CONNECTOR PLUG MARKED WITH M28840/16 M28840/16 PART NUMBER F Cable Entry Designator A Thread Class 2B Open ... | Original |
1 pages, |
DS 2020 m28840/16 M28840 MIL-DTL28840 M28840/17 MIL-DTL28840 abstract |
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| Abstract: PHILIPS E C G INC S4E » - bbS3126 D0D7217 D0D7217 Tbb UZCG High Speed - SCR (Switching) ® VDRM IT Max Forward Current (Amps) 'T RMS - All Conduction Angles IT Ave - Conduction Angle = 180" RMS 8 A 36 A 125 A 275 A 400 A 475 A 700 A Av. 5 A 16 A 80 A 175 A 250 A 300 A 450 A 600 ECG5351A ECG5351A ECG5360 ECG5360 ECG5368 ECG5368 ECG5371 ECG5371 ECG5374 ECG5374 ECG5380 ECG5380 ECG5377 ECG5377 ECG5386 ECG5386 1200 ECG5369 ECG5369 ECG5372 ECG5372 ECG5375 ECG5375 ECG5381 ECG5381 ECG5378 ECG5378 ECG5387 ECG5387 IGT Min (mA) 50 180 150 150 150 150 150 150 VGT Max (V) ... | OCR Scan |
1 pages, |
TG48 ECG5360 ECG5368 ECG5369 ECG5371 ECG5372 ECG5374 ECG5377 ECG5380 ECG5386 scr 250 amps ECG5351A scr 300 amps D0D7217 ECG5375 D0D7217 abstract |
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| Abstract: B!POLAR MEMORY DIVISION JANUARY 1983 FIELD PROGRAMMABLE LOGIC SEQUENCER (16 x 45 x 12) 82S158 82S158 (O.CJ/82S159 CJ/82S159 (T.S.) INTEGRATED FUSE LOGIC SERIES 20 PROGRAM CYCLE ROW/COLUMN FUSE ADDRESSING VARIABLE SELECT TABLE1 ROW HEX ADDRESS SELECTED B2B3 F0F1F2F3 0 0 B3 0 1 b3 0 2 b2 0 3 b2 0 4 B1 0 5 B1 0 6 S» 0 7 B(> 0 8 Î3 0 9 I3 0 A T2 0 B l2 0 C '1 0 D >1 0 E < Ïo 0 F CE CT 'o 2 0 Q FO 2 1 < FO 2 2 F, 2 3 Fi 2 4 F2 2 5 F2 2 6 F3 2 7 1=3 ... | OCR Scan |
1 pages, |
82S158 82S159 CJ/82S159 82S158 abstract |
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| Abstract: Rotary Backlock Connector (0.5-mm Pitch, Double-sided Contact) XF2M Rotary Lock Achieves High Reliability and Superior Work Efficiency. · Double-sided contact reduces the number of parts. · Applicable FPC thickness of 0.3 mm. Ratings and Specifications Materials and Finish XF2M-@@15-1A XF2M-@@15-1A Rated current 0.5 A AC/DC Housing LCP resin (UL94V-0 UL94V-0)/natural Rated voltage 50 V AC/DC Slider LCP resin (UL94V-0 UL94V-0)/black Contact resistance 50 m ma ... | Original |
2 pages, |
XF2M-5015-1 XF2M-4015-1 XF2M datasheet abstract |
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| Abstract: Rotary Backlock Type (0.5 mm-pitch) XF2M Rotary lock achieves high reliability and superior work efficiency. Double-sided (upper and lower) contact structure enables component reductions. Applicable FPC thickness, t = 0.3 mm. Specifications Materials/Finish Rated current 0.5A AC/DC Housing LCP resin (UL94V-0 UL94V-0)/natural Rated voltage 50V AC/DC Slider LCP resin (UL94V-0 UL94V-0)/black Contact resistance 40m max. (at 20 mV max., 100 mA max.) Contact Spring co ... | Original |
2 pages, |
d 4515 XF2M datasheet abstract |
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| Abstract: « INVERTER GRIN/PHRSE vs. FREQUENCY CHRRRCTERISTICS » IC : KSS7CHKIC Vdd t 3 CVJ CUn CdB] Ft - 7 [MHz] P.M - 105.2 Cdeg] -> 8 CdB] 1-1-1-I »Mil Phm Cd«fl3 T-1-I I I II « N.I J " 1. KS57C0002ME KS57C0002ME - 1 7 5 3 1 -1 7 5 3 1 -1 5 3 1 -1 -3 -5 400 300 200 100 0 60 55 50 45 40 4 3 2 1 4 3 2 1 a. V1H/V1L CV3 FCR4.19M5 Vdd= 3 [V] (Fig.a-d) Ta= 20 Cdeg] Typ i cal c. Fosc 1*4] ? - RP - • _i ... | OCR Scan |
7 pages, |
phm 0048 KSS7 cdb 4121 e abb inverter KS57C0002ME KS57C0002ME abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| * * NEWPORT COMPONENTS INDUCTOR MODELLER FOR SPICE 2G6 * .SUBCKT L18254 L18254 L18254 L18254 1 2 LO 1 3 POLY 2.50E-04 50E-04 50E-04 50E-04 0 -3.91E-05 91E-05 91E-05 91E-05 RDC 3 2 0.230 CP 1 2 7.40E-12 40E-12 40E-12 40E-12 RP 1 2 2.91E+05 .ENDS * www.datasheetarchive.com/files/newport/spice/indmod/lib2g6/1800/l18254.mod |
Newport | 30/05/1995 | 0.29 Kb | MOD | l18254.mod |
| * * * Property of Texas Instruments Incorporated. Unauthorized * * reproduction and/or distribution is strictly prohibited. * * * * This product is protected under copyright law. * * Created 1994, (C) Copyr www.datasheetarchive.com/files/texas-instruments/data/models/spice/process/impact/impact.s |
Texas Instruments | 03/11/1997 | 3.25 Kb | S | impact.s |
| *Feb 13, 2006 *Doc. ID: 77203, S-60145 S-60145 S-60145 S-60145, Rev. B *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si7478DP Si7478DP Si7478DP Si7478DP 4 1 2 M1 3 1 2 2 NMOS W=10643891u L=0.25u M2 2 1 2 4 PMOS W=10643891u L=0.30u R1 4 3 RTEMP 2.5E-3 CGS 1 2 5000E-12 5000E-12 5000E-12 5000E-12 DBD 2 4 DBD * www.datasheetarchive.com/files/vishay/docs/77203/si7478dp.txt |
Vishay | 16/02/2006 | 1.49 Kb | TXT | si7478dp.txt |
| *Feb 13, 2006 *Doc. ID: 77205, S-60145 S-60145 S-60145 S-60145, Rev. B *File Name: Si7478DP Si7478DP Si7478DP Si7478DP_PS.txt and Si7478DP Si7478DP Si7478DP Si7478DP_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si7478DP Si7478DP Si7478DP Si7478DP 4 1 2 M1 3 1 2 2 NMOS W=10643891u L=0.25u M2 2 1 2 4 PMOS W=10643891u L=0.30u R1 4 3 RTEMP 2.5E-3 CGS 1 2 5000E-12 5000E-12 5000E-12 5000E-12 DBD 2 4 DBD * www.datasheetarchive.com/files/vishay/docs/77205/si7478dp.txt |
Vishay | 16/02/2006 | 1.48 Kb | TXT | si7478dp.txt |
| *Feb 13, 2006 *Doc. ID: 78997, S-60145 S-60145 S-60145 S-60145, Rev. B *File Name: Si7478DP Si7478DP Si7478DP Si7478DP_PS.txt and Si7478DP Si7478DP Si7478DP Si7478DP_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si7478DP Si7478DP Si7478DP Si7478DP 4 1 2 M1 3 1 2 2 NMOS W=10643891u L=0.25u M2 2 1 2 4 PMOS W=10643891u L=0.30u R1 4 3 RTEMP 2.5E-3 CGS 1 2 5000E-12 5000E-12 5000E-12 5000E-12 DBD 2 4 DBD * www.datasheetarchive.com/files/vishay/docs/78997/si7478dp.lib |
Vishay | 16/02/2006 | 1.48 Kb | LIB | si7478dp.lib |
| * * Model created by * * Uni.Dipl.-Ing. Arpad Buermen * * arpad.burmen@ieee.org * * Copyright: * * Thomatronik GmbH, Germany * * info@thomatronik.de * * * February 2001 * SPICE3 * anode cathode * Reverse direction: node 9 www.datasheetarchive.com/files/vishay/docs/88092/p6ke10a.txt |
Vishay | 05/06/2003 | 0.93 Kb | TXT | p6ke10a.txt |
| * * Model created by * * Uni.Dipl.-Ing. Arpad Buermen * * arpad.burmen@ieee.org * * Copyright: * * Thomatronik GmbH, Germany * * info@thomatronik.de * * * February 2001 * SPICE3 * anode cathode * Reverse direction: node 9 www.datasheetarchive.com/files/vishay/docs/88091/p6ke10.txt |
Vishay | 05/06/2003 | 0.92 Kb | TXT | p6ke10.txt |
| .SUBCKT RF1S70N06 RF1S70N06 RF1S70N06 RF1S70N06 2 1 3 ; REV 3/20/92 *Term. Conn.* D G S *Spice model circuit file for the RF1S70N06 RF1S70N06 RF1S70N06 RF1S70N06, RF1S70N06SM RF1S70N06SM RF1S70N06SM RF1S70N06SM *For a detail specification see datasheet FN3206 FN3206 FN3206 FN3206 * * For further discussion of this PSPICE PowerFET macromodel consult * * A New PSPICE Sub-circuit for the Power MOSFET Featuring Global * * Temperature Options by William J. Hepp and C. Frank Wheatley * *NOM TEMP=25 deg C www.datasheetarchive.com/files/harris/data/mm/mm3/mm3206/mm3206.mdl |
Harris | 15/08/1997 | 5.2 Kb | MDL | mm3206.mdl |
| *FDV302P FDV302P FDV302P FDV302P at Temp. Electrical Model *- .SUBCKT FDV302P FDV302P FDV302P FDV302P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-0.83 KP=1.53E-1 53E-1 53E-1 53E-1 +THETA=0.25 VMAX=2E5 LEVEL=3) Cgs 1 5x 32p Rd 20 4 1.4 Dds 4 5x DDS .MODEL DDS D(M=2.91E-1 91E-1 91E-1 91E-1 VJ=4.64E-1 64E-1 64E-1 64E-1 CJO=14.1p) Dbody 20 5x DBODY .MODEL DBODY D(IS=7.94E-8 94E-8 94E-8 94E-8 N=2.460181 RS=.021333 TT=52.03n) Ra 4 2 1.4 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 www.datasheetarchive.com/files/fairchild/pdfs/models actual/fdv302p.mod |
Fairchild | 22/08/2003 | 1.12 Kb | MOD | fdv302p.mod |
| *FDV302P FDV302P FDV302P FDV302P at Temp. Electrical Model *- .SUBCKT FDV302P FDV302P FDV302P FDV302P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-0.83 KP=1.53E-1 53E-1 53E-1 53E-1 +THETA=0.25 VMAX=2E5 LEVEL=3) Cgs 1 5x 32p Rd 20 4 1.4 Dds 4 5x DDS .MODEL DDS D(M=2.91E-1 91E-1 91E-1 91E-1 VJ=4.64E-1 64E-1 64E-1 64E-1 CJO=14.1p) Dbody 20 5x DBODY .MODEL DBODY D(IS=7.94E-8 94E-8 94E-8 94E-8 N=2.460181 RS=.021333 TT=52.03n) Ra 4 2 1.4 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 www.datasheetarchive.com/files/fairchild/pdfs/models/fdv302p.txt |
Fairchild | 22/08/2003 | 1.12 Kb | TXT | fdv302p.txt |