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TMS28F010A-12C4FME Texas Instruments 128KX8 FLASH 12V PROM, 120ns, PQCC32 visit Texas Instruments
TMS28F010B-10C5FME Texas Instruments 128KX8 FLASH 12V PROM, 100ns, PQCC32, 1.25 MM PITCH, PLASTIC, LCC-32 visit Texas Instruments
TMS28F010B-10C5FML Texas Instruments 128KX8 FLASH 12V PROM, 100ns, PQCC32, 1.25 MM PITCH, PLASTIC, LCC-32 visit Texas Instruments
TMS28F010A-12C4FML Texas Instruments 128KX8 FLASH 12V PROM, 120ns, PQCC32 visit Texas Instruments
TMS28F010A-15C4FML Texas Instruments 128KX8 FLASH 12V PROM, 150ns, PQCC32 visit Texas Instruments
TMS28F010B-12C5FML Texas Instruments 128KX8 FLASH 12V PROM, 120ns, PQCC32, 1.25 MM PITCH, PLASTIC, LCC-32 visit Texas Instruments

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28F010 Datasheet

Part Manufacturer Description PDF Type
28F010 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original
28F010 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original
28F010 Intel 1024K (128K x 8) FLASH MEMORY Original
28F010 Intel 1024K (256K x 8) CMOS Flash Memory Scan
28F010 Intel 1024K CMOS Flash Memory Scan
28F010 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
28F010 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
28F010 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
28F010 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
28F010 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
28F0101024K Intel 28F010 1024K (128K x 8) CMOS FLASH MEMORY Original
28F010-15A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan
28F010-15F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan
28F010-15N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan
28F010I-17A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan
28F010I-17F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan
28F010I-17N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan
28F010M-17F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan

28F010

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: of code and data-tables are required, the 28F010's reprogrammability and non­ volatility make it , . Figure 4 de­ picts two 28F010S tied to the 80C186 system bus. The 28F010â'™s architecture minimizes , 28F010S. TSOP is particu­ larly suited for portable equipment and applications requiring large amounts , 28F010â'™s circuitry and sub­ stantially reduces device power consumption. The outputs are placed in a , bus operations are com­ bined to perform electrical erasure of the 28F010. Refer to AC Erase -
OCR Scan
1024K P28F010-65 N28F010-65 P28F010-90 E28F010-65 F28F010-65
Abstract: . Figure 4 de­ picts two 28F010s tied to the 80C186 system bus. The 28F010â'™s architecture minimizes , required, the 28F010â'™s reprogrammability and non­ volatility make it the obvious and ideal replacement , 28F010s. TSOP is particu­ larly suited for portable equipment and applications requiring large amounts , operation disables most of the 28F010â'™s circuitry and substantially reduces device power consump­ tion , electrical erasure of the 28F010. Refer to AC Erase Characteristics and Waveforms for specific timing -
OCR Scan
32-LEAD F28F010-90 F28F010-120 F28F010-150 TN28F010-90

29F020

Abstract: 29020 Vcc Min Ioh = -100 pa 28F010/28F020 4.6 DC Characteristicsâ'"28F010â'"CMOS Compatible Commercial , ^ t intel 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 (x8) Flash Electrical Chip-Erase , cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020 , final test; and in-system after sale. The 28F010 and 28F020 increase memory flexibility, while contributing to time and cost savings. The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072
-
OCR Scan
29F020 29020 E28F010 N28F010 P28F010 28F010/28F020 TE28F010-90 TE28F010-120 TE28F010-150 E28F020-90 E28F020-120

28F010T

Abstract: perature Options Added 28F010-65 and 28F010-90 speeds Revised Symbols, i.e., CE, OE, etc. to CE#, OE#, etc , battery-backed static RAM. W here periodic updates of code and data tables are required, the 28F010's reprogram m , interfacing. Figure 3 depicts two 28F010s tied to the 80C186 system bus. The 28F010's architecture m inim izes , logic-high level, the standby operation disables m ost of the 28F010's circuitry and substantially reduces , combined to perform electrical erasure of the 28F010. Refer to AC C haracteristics - W rite/Erase/Program
-
OCR Scan
28F010T 28F010-120 28F010-150 8F010-90
Abstract: Operations^) Versions Symbol Notes Characteristic 28F010-120 Min 3 Max 28F010-150 Min , rite Cycle Time tAVAv/twC 28F010-120 28F010-150 Min Versions Min 120 Max , board. Ultimately, the final code can be down­ loaded to the device. The 28F010â'™s in-circuit , via an edge-connec­ tor, or remotely over a serial communication link. The 28F010â'™s electrical , to the 80C186 system bus. The 28F010â'™s architecture minimizes interface cir­ cuitry needed for -
OCR Scan
A28F010 AP28F010-120 AN28F010-120 AN28F010-150 ER-20

28F010-120

Abstract: 28f010 28F010-120, 28F010-150 28F010 AC TESTING INPUT/OUTPUT WAVEFORM For 28F010-90V05 3 .0 - INPUT X , . Input rise and fall times (10% to 90%) , Products 28F010-90V05Í3.4) Min 90 90 90 40 0 0 28F010-120 Min 120 120 28F010-150 Min 150 150 150 , 28F010-90V05
-
OCR Scan
N28F010-90V05 TN28F010-120 TF28F010-120 ER-24 RR-60 AP-316

28F010

Abstract: TN28F010 Temperature Options -009 Added 28F010-65 and 28F010-90 speeds - - Revised Symbols , 28F010's reprogrammability and nonvolatility make it the obvious and ideal replacement for EPROM , memory-to-processor interfacing. Figure 3 depicts two 28F010s tied to the 80C186 system bus. The 28F010's , 2.2.1.3 Standby With CE# at a logic-high level, the standby operation disables most of the 28F010's , combined to perform electrical erasure of the 28F010. Refer to AC Characteristics-Write/Erase/Program
Intel
Original
TN28F010 PLCC pin configuration 80c186 1N914 tn28f010-150 TP28F010-90 TP28F010-120 TP28F010-150 TN28F010-150

28F020

Abstract: TN28F010 E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 (x8) n n n n n n n Flash , cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020 , during final test; and in-system after sale. The 28F010 and 28F020 increase memory flexibility, while contributing to time and cost savings. The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 , that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F010 and 28F020 perform 100,000 erase
Intel
Original
N28F020-150 intel 28F010 E28F020-150 N28F020-90 N28F020-120 TE28F020-90 TE28F020-120

28F010

Abstract: P28F010-150 characteristics for 28F010-65 in standard configuration and 28F010-90 28F010-120 and 28F010-150 2 Testing characteristics for 28F010-65 in high speed configuration 20 1 5V 1 5V 30 pF CE Address Access Time , periodic updates of code and data-tables are required the 28F010's reprogrammability and nonvolatility , 80C186 system bus The 28F010's architecture minimizes interface circuitry needed for complete in-circuit , highimpedance state Standby With CE at a logic-high level the standby operation disables most of the 28F010's
Intel
Original
290207-010 TF28F010-90 ER-28 AP-325

28f010-200

Abstract: P28F010-200 0 40 Max 28F010-150 Min 150 150 150 55 0 55 Max 28F010-200 Min 200 200 200 60 Max Unit ns ns ns ns , 28F010-150 Min 150 0 60 50 10 6 0 20 0 60 20 10 9.5 1.0 Max 28F010-200 Min 200 0 75 50 10 6 0 20 0 60 20 10 , to Chip Enable Low 1 28F010-120 Min 120 0 80 50 10 6 28F010-150 Min 150 0 80 50 10 6 , stat ic RAM. Where periodic updates of code and datatables are required, the 28F010's reprogrammability , de picts two 28F010s tied to the 80C186 system bus. The 28F010's architecture minimizes interface cir
-
OCR Scan
P28F010-200 26F010 290207 8F010-200 32-P1N E28F010-200 F28F010-200

AN28F010-150

Abstract: AN28F010-120 the device The 28F010's in-circuit alterability eliminates unnecessary handling and less-reliable , locally via an edge-connector or remotely over a serial communication link The 28F010's electrical , memory-to-processor interfacing Figure 3 depicts two 28F010s tied to the 80C186 system bus The 28F010's architecture , 28F010's circuitry and substantially reduces device power consumption The outputs are placed in a , Time 1 3 120 28F010-150 tAVAV tRC NOTES 1 Whichever occurs first 2 Rise Fall Time s 10
Intel
Original
intel Automotive

intel 27c512 eprom

Abstract: Needham Electronics PB-10 Programmer programmer for specific model support. 28F010 DIP Use AMD/Intel 28F010 part number and disable , disable manufacturer's ID code. PLCCConsult with programmer for specific model support. 28F010 DIPUse AMD/Intel 28F010 part number and disable manufacturer's ID code. PLCCConsult with programmer for , . PLCCConsult with programmer for specific model support. 28F010 DIPUse AMD/Intel 28F010 part number and , . PLCC Consult with programmer for specific model support. 28F010 DIP Use AMD/Intel 28F010 part number
Integrated Silicon Solution
Original
27C256 intel 27c512 eprom Needham Electronics PB-10 Programmer 27HC010 intel 27C512 minato Model 1890A NV81995P601 27HC010/27C010 27HC512/27C512

29212* intel

Abstract: tLZ tH Z tO LZ tDF *OH 28F010-120 Min 120 120 120 50 0 55 0 30 0 6 28F010-150 Min 150 150 150 , . Throughout this document, specific examples highlight conversion of a 28F010-based design to the 28F001BX , package pinouts for the 28F010 and 28F001BX are very similar. The 28F010's NC (no connect) pin, reserved , tWLWH tWHEH tW HW L l VPS te s tAS tAH Vcc ±10% Characteristic 28F010-120 Min 1.0 20 0 50 60 0 20 28F010-150 Min 1.0 20 0 50 60 0 20 Unit fxS Max Max Vpp Setup Time to Chip Enable Low Chip
-
OCR Scan
29212* intel 28F001BX-120 28F001BX-150 28F256A 28F512 28F200BX/002BX 28F200BX-L/002BX-L

D28F010-120P1C4

Abstract: D28F010-12 28F010-150P1C4 Min 150 150 150 65 0 0 28F010-200P1C4 Min 200 200 200 Unit ns ns ns ns ns ns Max Max , down loaded to the device. The 28F010's in-circuit alterability eliminates unnecessary handling and , locally via an edge-connec tor, or remotely over a serial communication link. The 28F010's electrical , system bus. The 28F010's architecture minimizes interface cir cuitry needed for complete in-circuit , of the 28F010's circuitry and substantially reduces device power consump tion. The outputs are placed
-
OCR Scan
D28F010-120P1C4 N28F010-200P1C4 D28F010-12 28F010P 28F010150P T-46-13-27 D28F010-150P1C4 N28F010-120P1C4 N28F010-150P1C4

27HC010

Abstract: intel 27c512 /27C010 - DIP - PLCC - TSOP* 27HC512/27C512 - DIP - PLCC - TSOP* 27HC256/27C256 - DIP - PLCC 28F010 - DIP , AMD/Intel 28F010 part number and disable m anufacturer's ID code. Consult with programmer for specific , DIP - PLCC - TSOP* 27HC256/27C256 - DIP - PLCC 28F010 - DIP - PLCC - TSOP* Version Proteus V3.61 V3 , . Consult with programmer for specific model support. Use AMD/Intel 28F010 part number and disable m , /27C010 - DIP - PLCC 27HC512/27C512 - DIP - PLCC - TSOP* 27HC256/27C256 - DIP - PLCC 28F010 - DIP - PLCC -
-
OCR Scan
GANgpro-s RomMax 27c512 GANgpro allmax programmers 1890a 27C512 VB1995P EMP-20

29020

Abstract: . 30 pF NOTES: 1 . Testing characteristics for 28F010-65 in standard configuration, and 28F010-90, 28F010-120, and 28F010-150. 2. Testing characteristics for 28F010-65 in high speed configuration. 20 A , 28F010-65 Min 65 65 65 25 Max Min 70 70 70 28 Max 28F010-90 Min 90 90 90 35 Max 28F010-120 Min Max , Set-Up Time Address Hold Time Vcc ± 5 % Vcc ± 10% Notes 28F010-65W 28F010-65 Min 65 Max Min 70 Max 28F010-90(5) Min 90 Max 28F010-120
-
OCR Scan
E28F010- TF28F
Abstract: for the 28F010. The first is our recommendation to avoid exposing Flash devices to ultraviolet light , in te l 28F010 1024K (128K x 8) FLASH MEMORY SmartDie Product Specification Flash Electrical , Range â'" Available in 90 ns Access Time Only â  Reference the 28F010 1024K (128K x 8) CMOS Flash , 28F010 1024K (128K x 8) FLASH MEMORY 28F010 1024K (128K x 8) Flash Memory Die Photo 10-2 â  452bl7S Q155bG3 2T1 â  P fö ü U lÃ" lÃ" K R f 28F010 1024K (128K x 8) FLASH MEMORY in te l -
OCR Scan
28F400B

PPH 2222 36

Abstract: P28F010-150 ercial P ro d u c ts .22 4.6 DC Characteristics- 28F010- CMOS Com patible- Com m ercial P , c ts .25 4.8 DC Characteristics- 28F010- TTLVNMO Com patible- Extended Tem perature P , .29 4.10 DC Characteristics- 28F010- CM OS Com patible- Extended Tem perature P ro d u c ts , .32 4.12 AC C haracteristics- 28F010- Read-Only O peration- Com m ercial and Extended T em perature , 4.14 AC C haracteristics- 28F010- W rite/Erase/Program O nly Operation- Com m ercial and Extended
-
OCR Scan
PPH 2222 36 28F010-150N 28F020-90 28F020-120 28F020-150 TE28F020-150

intel 28F010

Abstract: PLD intel Operation»â'"Commercial and Extended Temperature Products Versions Notes 28F010-9«V05(3.4) 28F010-120 28F010-150 Unit , Temperature Products _ Versions Notes 28F010-90V05Ã"«) 28F010-120(4) 28F010-150«) Unit Symbol , MflEbl7b 0D7bSÃ0 T43 «ITL2 AC TESTING INPUT/OUTPUT WAVEFORM For 28F010-120, 28F010-150 INPUT 0.45- X20X , 28F010-120, 28F010-150 device under test CL - 100 pF _ CL includes Jig Capacitance â'" Rl = 3.3 Kil 290207-22 , Capacitance Rl = 3.3 KO 290207-23 AC TEST CONDITIONS For 28F010-120, 28F010-150 Input Rise and Fall Times (10
-
OCR Scan
PLD intel 07B27 intel PLD interfacing eprom and eeprom T-46-13-26 32-PIN

intel 28F010

Abstract: 28F010 Packaging Spec., Order 231369) Integrated Program/Erase Stop Timer Intel's 28F010 CMOS flash memory , . The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory , ; in -system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings. The 28F010 is a 1024-Kb memory organized as 131,072 bytes of eight bits. Intel's 28F010 is offered in 32-pin Plastic DIP or 32-lead PLCC packages. Pin
Intel
Original
231369 order 231369
Abstract: binary code for the device on outputs l/Oo to I/O7. 28F010/28F010I Code - 1011 0100 (B4H) Erase , /28F01 Ol DC CHARACTERISTICS VCC - 5V ± 10%, Ta - 0°C to +70°C (28F010), Ta - -40°C to +85°C , Vcc AC CHARACTERISTICS , Preliminary AC CHARACTERISTICS -
OCR Scan
CAT28F010/28F010I AT28F010/28F0101 T28F010/28F0101
Abstract: ) Intelâ'™s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar , ­ board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases memory flexibility, while contributing to time- and cost-savings. The 28F010 is a 1024-kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intelâ'™s 28F010 is offered in 32-pin Plastic DIP or -
OCR Scan
0174SI4
Abstract: '™s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar , ­ board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases memory flexibility, while contributing to time- and cost-savings. The 28F010 is a 1024-kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel's 28F010 is offered in 32-pin Plastic DIP or -
OCR Scan
Abstract: pulse stop tim er GENERAL DESCRIPTION The Am 28F010 is a 1 M egabit Flash memory organized , /write non volatile random access memory. The Am 28F010 is packaged in 32-pin PDIP, PLCC, and TSOP , med and erased in-system or in standard EPROM programmers. The standard Am 28F010 offers access tim es , inate bus contention, the Am 28F010 has separate chip enable (CE) and out put enable (OE) controls. AM D , . The Am 28F010 uses a comm and register to m anage this functionality, while m aintaining a standard 32 -
OCR Scan
28F010-95 11559E-18

AN28F010-150

Abstract: 28F010 ., Order #231369) Intel's 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and , . The 28F010 increases memory flexibility, while contributing to time- and cost-savings. The 28F010 is a 1024-kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel's 28F010 is offered in 32 , reliable cycling beyond that of traditional EEPROMs. With the 12.0V VPP supply, the 28F010 performs a
-
OCR Scan

8088 memory interface SRAM

Abstract: intel 8086 (28F010 to 28F001BX) . 6 2.4 Pinout Adaptability (Other Densities) . 6 3.0 MEMORY MAP , 28F002BX (x8, 2 Mb) 40-pin TSOP 28F010 (x8, 1 Mb) 32-pin DIP, PLCC, TSOP 28F200BX (x8/x16, 2 Mb , examples highlight conversion of a 28F010-based design to the 28F001BX. However, the techniques shown are , memories. Issues specific to conversion other than 28F010 to 28F001BX will be spelled out where , Appendices A, B and C show pinout comparisons between the 28F010 and 28F001BX flash memories. In this
Intel
Original
8088 memory interface SRAM intel 8086 intel microprocesser 8086 mcs 96 programming microprocessor 80286 internal architecture Intel AP-380 AP-380 CG-041493 2048K
Abstract: ) Intelâ'™s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar , ­ board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases memory flexibility, while contributing to time- and cost-savings. The 28F010 is a 1024-kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intelâ'™s 28F010 is offered in 32-pin Plastic DIP or -
OCR Scan
32-LE
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